TWI368827B - Hardmask composition for resist underlayer film and method for producing semiconductor integrated circuit device using the same - Google Patents

Hardmask composition for resist underlayer film and method for producing semiconductor integrated circuit device using the same

Info

Publication number
TWI368827B
TWI368827B TW096129635A TW96129635A TWI368827B TW I368827 B TWI368827 B TW I368827B TW 096129635 A TW096129635 A TW 096129635A TW 96129635 A TW96129635 A TW 96129635A TW I368827 B TWI368827 B TW I368827B
Authority
TW
Taiwan
Prior art keywords
integrated circuit
same
semiconductor integrated
circuit device
underlayer film
Prior art date
Application number
TW096129635A
Other languages
English (en)
Other versions
TW200815928A (en
Inventor
Sang Kyun Kim
Sang Hak Lim
Mi Young Kim
Sang Ran Koh
Hui Chan Yun
Do Hyeon Kim
Dong Seon Uh
Jong Seob Kim
Original Assignee
Cheil Ind Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Cheil Ind Inc filed Critical Cheil Ind Inc
Publication of TW200815928A publication Critical patent/TW200815928A/zh
Application granted granted Critical
Publication of TWI368827B publication Critical patent/TWI368827B/zh

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105After-treatment
    • H01L21/311Etching the insulating layers by chemical or physical means
    • H01L21/31144Etching the insulating layers by chemical or physical means using masks
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08GMACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/04Polysiloxanes
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09DCOATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D183/00Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Coating compositions based on derivatives of such polymers
    • C09D183/04Polysiloxanes
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274Photolithographic processes
    • H01L21/0276Photolithographic processes using an anti-reflective coating

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Organic Chemistry (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Health & Medical Sciences (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Materials Engineering (AREA)
  • Wood Science & Technology (AREA)
  • Materials For Photolithography (AREA)
  • Silicon Polymers (AREA)
TW096129635A 2006-08-10 2007-08-10 Hardmask composition for resist underlayer film and method for producing semiconductor integrated circuit device using the same TWI368827B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020060075842A KR100792045B1 (ko) 2006-08-10 2006-08-10 레지스트 하층막용 하드마스크 조성물 및 이를 이용한반도체 집적회로 디바이스의 제조방법

Publications (2)

Publication Number Publication Date
TW200815928A TW200815928A (en) 2008-04-01
TWI368827B true TWI368827B (en) 2012-07-21

Family

ID=39033171

Family Applications (1)

Application Number Title Priority Date Filing Date
TW096129635A TWI368827B (en) 2006-08-10 2007-08-10 Hardmask composition for resist underlayer film and method for producing semiconductor integrated circuit device using the same

Country Status (5)

Country Link
US (1) US8916329B2 (zh)
KR (1) KR100792045B1 (zh)
CN (1) CN101506941B (zh)
TW (1) TWI368827B (zh)
WO (1) WO2008018664A1 (zh)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101288572B1 (ko) * 2008-12-17 2013-07-22 제일모직주식회사 보관안정성이 우수한 레지스트 하층막용 하드마스크 조성물
KR101266291B1 (ko) * 2008-12-30 2013-05-22 제일모직주식회사 레지스트 하층막용 조성물 및 이를 이용한 반도체 집적회로디바이스의 제조방법
KR101344794B1 (ko) 2009-12-31 2014-01-16 제일모직주식회사 레지스트 하층막용 방향족 고리 함유 중합체 및 이를 포함하는 레지스트 하층막 조성물
KR20110079202A (ko) 2009-12-31 2011-07-07 제일모직주식회사 레지스트 하층막용 조성물 및 이를 이용한 반도체 집적회로 디바이스의 제조방법
KR101531611B1 (ko) * 2012-12-28 2015-06-25 제일모직 주식회사 반도체 집적회로 디바이스의 제조방법 및 이에 따른 반도체 집적회로 디바이스
JP6681795B2 (ja) * 2015-09-24 2020-04-15 東京応化工業株式会社 表面処理剤及び表面処理方法
US10093815B2 (en) * 2015-09-24 2018-10-09 Tokyo Ohka Kogyo Co., Ltd. Surface treatment agent and surface treatment method
KR102194975B1 (ko) 2017-10-13 2020-12-24 삼성에스디아이 주식회사 실리카 막 형성용 조성물, 실리카 막의 제조방법 및 실리카 막

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3011761C2 (de) * 1980-03-26 1983-11-24 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V., 8000 München Verfahren zum Verbinden von Substraten durch Heißsiegeln
JPH08302284A (ja) * 1995-05-09 1996-11-19 Osaka City 光硬化性コ−ティング組成物及びそれを用いる硬化皮膜
JP4096138B2 (ja) 1999-04-12 2008-06-04 Jsr株式会社 レジスト下層膜用組成物の製造方法
JP4041966B2 (ja) * 2002-06-18 2008-02-06 信越化学工業株式会社 ハードコート剤及びハードコート膜が形成された物品
KR100480611B1 (ko) * 2002-08-14 2005-03-31 삼성전자주식회사 기상 실릴레이션을 이용한 반도체 소자의 미세 패턴 형성방법
US7361718B2 (en) * 2002-12-26 2008-04-22 Nissan Chemical Industries, Ltd. Alkali-soluble gap fill material forming composition for lithography
JP4488215B2 (ja) * 2004-08-19 2010-06-23 信越化学工業株式会社 レジスト組成物並びにこれを用いたパターン形成方法
US7511296B2 (en) * 2005-03-25 2009-03-31 Canon Kabushiki Kaisha Organic semiconductor device, field-effect transistor, and their manufacturing methods
US20070212886A1 (en) * 2006-03-13 2007-09-13 Dong Seon Uh Organosilane polymers, hardmask compositions including the same and methods of producing semiconductor devices using organosilane hardmask compositions

Also Published As

Publication number Publication date
CN101506941A (zh) 2009-08-12
US8916329B2 (en) 2014-12-23
WO2008018664A1 (en) 2008-02-14
TW200815928A (en) 2008-04-01
US20090226824A1 (en) 2009-09-10
KR100792045B1 (ko) 2008-01-04
CN101506941B (zh) 2012-02-29

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