TWI367546B - Method and manufacturing semiconductor device - Google Patents

Method and manufacturing semiconductor device

Info

Publication number
TWI367546B
TWI367546B TW096134959A TW96134959A TWI367546B TW I367546 B TWI367546 B TW I367546B TW 096134959 A TW096134959 A TW 096134959A TW 96134959 A TW96134959 A TW 96134959A TW I367546 B TWI367546 B TW I367546B
Authority
TW
Taiwan
Prior art keywords
semiconductor device
manufacturing semiconductor
manufacturing
semiconductor
Prior art date
Application number
TW096134959A
Other languages
English (en)
Other versions
TW200824042A (en
Inventor
Shinichi Arakawa
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Publication of TW200824042A publication Critical patent/TW200824042A/zh
Application granted granted Critical
Publication of TWI367546B publication Critical patent/TWI367546B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
    • H01L21/76807—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics for dual damascene structures
    • H01L21/76808—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics for dual damascene structures involving intermediate temporary filling with material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
    • H01L21/76807—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics for dual damascene structures
    • H01L21/76811—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics for dual damascene structures involving multiple stacked pre-patterned masks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76822—Modification of the material of dielectric layers, e.g. grading, after-treatment to improve the stability of the layers, to increase their density etc.
    • H01L21/76825—Modification of the material of dielectric layers, e.g. grading, after-treatment to improve the stability of the layers, to increase their density etc. by exposing the layer to particle radiation, e.g. ion implantation, irradiation with UV light or electrons etc.
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76829—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing characterised by the formation of thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers
    • H01L21/76831—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing characterised by the formation of thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers in via holes or trenches, e.g. non-conductive sidewall liners
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76835—Combinations of two or more different dielectric layers having a low dielectric constant

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
TW096134959A 2006-10-02 2007-09-19 Method and manufacturing semiconductor device TWI367546B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2006270360A JP2008091600A (ja) 2006-10-02 2006-10-02 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
TW200824042A TW200824042A (en) 2008-06-01
TWI367546B true TWI367546B (en) 2012-07-01

Family

ID=39261633

Family Applications (1)

Application Number Title Priority Date Filing Date
TW096134959A TWI367546B (en) 2006-10-02 2007-09-19 Method and manufacturing semiconductor device

Country Status (4)

Country Link
US (1) US7648920B2 (zh)
JP (1) JP2008091600A (zh)
KR (1) KR20080030954A (zh)
TW (1) TWI367546B (zh)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008091600A (ja) * 2006-10-02 2008-04-17 Sony Corp 半導体装置の製造方法
US7838425B2 (en) * 2008-06-16 2010-11-23 Kabushiki Kaisha Toshiba Method of treating surface of semiconductor substrate
US20140273463A1 (en) * 2013-03-15 2014-09-18 GlobalFoundries, Inc. Methods for fabricating integrated circuits that include a sealed sidewall in a porous low-k dielectric layer
KR102442096B1 (ko) 2017-11-22 2022-09-07 삼성전자주식회사 반도체 장치
US20210134744A1 (en) * 2019-11-05 2021-05-06 Nanya Technology Corporation Semiconductor device and method for fabricating the same
US11239164B2 (en) * 2020-02-26 2022-02-01 Nanya Technology Corporation Semiconductor device with metal plug having rounded top surface

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4574145B2 (ja) * 2002-09-13 2010-11-04 ローム・アンド・ハース・エレクトロニック・マテリアルズ，エル．エル．シー． エアギャップ形成
WO2005034194A2 (en) * 2003-10-08 2005-04-14 Honeywell International Inc. Repairing damage to low-k dielectric materials using silylating agents
JP2005142433A (ja) * 2003-11-07 2005-06-02 Semiconductor Leading Edge Technologies Inc 半導体装置の製造方法
US7088003B2 (en) * 2004-02-19 2006-08-08 International Business Machines Corporation Structures and methods for integration of ultralow-k dielectrics with improved reliability
US7435074B2 (en) * 2004-03-13 2008-10-14 International Business Machines Corporation Method for fabricating dual damascence structures using photo-imprint lithography, methods for fabricating imprint lithography molds for dual damascene structures, materials for imprintable dielectrics and equipment for photo-imprint lithography used in dual damascence patterning
EP1632956A1 (en) * 2004-09-07 2006-03-08 Rohm and Haas Electronic Materials, L.L.C. Compositions comprising an organic polysilica and an arylgroup-capped polyol, and methods for preparing porous organic polysilica films
WO2006058034A2 (en) * 2004-11-22 2006-06-01 Intermolecular, Inc. Molecular self-assembly in substrate processing
JP2006198552A (ja) * 2005-01-21 2006-08-03 Jsr Corp 表面疎水化方法、ならびに半導体装置およびその製造方法
US7655566B2 (en) * 2005-07-27 2010-02-02 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
JP5548332B2 (ja) * 2006-08-24 2014-07-16 富士通セミコンダクター株式会社 半導体デバイスの製造方法
JP2008091600A (ja) * 2006-10-02 2008-04-17 Sony Corp 半導体装置の製造方法

Also Published As

Publication number Publication date
JP2008091600A (ja) 2008-04-17
US7648920B2 (en) 2010-01-19
KR20080030954A (ko) 2008-04-07
TW200824042A (en) 2008-06-01
US20080081468A1 (en) 2008-04-03

Similar Documents

Publication Publication Date Title
TWI349981B (en) Semiconductor device and manufacturing method thereof
TWI318002B (en) Semiconductor device and manufacturing method thereof
EP2067173A4 (en) SEMICONDUCTOR COMPONENT AND MANUFACTURING METHOD THEREFOR
TWI365490B (en) Semiconductor device and method for manufacturing same
EP2037496A4 (en) SEMICONDUCTOR ASSEMBLY AND SEMICONDUCTOR MANUFACTURING METHOD
EP2015353A4 (en) SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
EP2088619A4 (en) SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
TWI349346B (en) Semiconductor device and method for manufacturing the same
TWI348020B (en) Semiconductor sensor device and manufacturing method thereof
EP2221859A4 (en) SEMICONDUCTOR COMPONENT AND SEMICONDUCTOR COMPONENT MANUFACTURING METHOD
TWI341589B (en) Semiconductor device and manufacturing method of the same
EP2008310A4 (en) SEMICONDUCTOR COMPONENT AND MANUFACTURING METHOD THEREFOR
EP1935027A4 (en) SEMICONDUCTOR COMPONENT AND MANUFACTURING METHOD THEREFOR
TWI318442B (en) A semiconductor device and a manufacturing method thereof
EP1946374A4 (en) SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
EP1966740A4 (en) SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
TWI373114B (en) Semiconductor device and manufacturing method thereof
EP2117036A4 (en) SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
EP1921674A4 (en) SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
TWI341594B (en) Semiconductor device and method of manufacturing the same
EP2096678A4 (en) SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
EP2330617A4 (en) SEMICONDUCTOR COMPONENT AND MANUFACTURING METHOD THEREFOR
EP1887624A4 (en) SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
EP2064732A4 (en) SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
TWI371095B (en) Semiconductor device and method of manufacturing the same

Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees