TWI366746B - Lithography system and lithography method using the same - Google Patents

Lithography system and lithography method using the same

Info

Publication number
TWI366746B
TWI366746B TW096122908A TW96122908A TWI366746B TW I366746 B TWI366746 B TW I366746B TW 096122908 A TW096122908 A TW 096122908A TW 96122908 A TW96122908 A TW 96122908A TW I366746 B TWI366746 B TW I366746B
Authority
TW
Taiwan
Prior art keywords
lithography
same
lithography system
lithography method
Prior art date
Application number
TW096122908A
Other languages
English (en)
Other versions
TW200815940A (en
Inventor
Hideo Inouei
Original Assignee
Nuflare Technology Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nuflare Technology Inc filed Critical Nuflare Technology Inc
Publication of TW200815940A publication Critical patent/TW200815940A/zh
Application granted granted Critical
Publication of TWI366746B publication Critical patent/TWI366746B/zh

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
    • G03F7/70508—Data handling in all parts of the microlithographic apparatus, e.g. handling pattern data for addressable masks or data transfer to or from different components within the exposure apparatus
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
    • G03F7/70525—Controlling normal operating mode, e.g. matching different apparatus, remote control or prediction of failure
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/706835—Metrology information management or control
    • G03F7/706837—Data analysis, e.g. filtering, weighting, flyer removal, fingerprints or root cause analysis
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/304—Controlling tubes by information coming from the objects or from the beam, e.g. correction signals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Analytical Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Data Mining & Analysis (AREA)
  • Electron Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
TW096122908A 2006-07-05 2007-06-25 Lithography system and lithography method using the same TWI366746B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2006185732A JP5111798B2 (ja) 2006-07-05 2006-07-05 描画装置、及び描画装置における描画方法

Publications (2)

Publication Number Publication Date
TW200815940A TW200815940A (en) 2008-04-01
TWI366746B true TWI366746B (en) 2012-06-21

Family

ID=38918326

Family Applications (1)

Application Number Title Priority Date Filing Date
TW096122908A TWI366746B (en) 2006-07-05 2007-06-25 Lithography system and lithography method using the same

Country Status (4)

Country Link
US (1) US7741614B2 (zh)
JP (1) JP5111798B2 (zh)
KR (1) KR100893245B1 (zh)
TW (1) TWI366746B (zh)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5095364B2 (ja) * 2007-11-26 2012-12-12 株式会社ニューフレアテクノロジー トラッキング制御方法および電子ビーム描画システム
JP5123730B2 (ja) * 2008-05-01 2013-01-23 株式会社ニューフレアテクノロジー 偏向アンプのセトリング時間検査方法及び偏向アンプの故障判定方法
JP5204687B2 (ja) * 2009-02-18 2013-06-05 株式会社ニューフレアテクノロジー 荷電粒子ビーム描画方法および荷電粒子ビーム描画装置
JP5687838B2 (ja) * 2010-01-20 2015-03-25 株式会社ニューフレアテクノロジー 荷電粒子ビーム描画装置及び荷電粒子ビーム描画方法
TW201224678A (en) * 2010-11-04 2012-06-16 Orc Mfg Co Ltd Exposure device
JP5693981B2 (ja) 2011-01-20 2015-04-01 株式会社ニューフレアテクノロジー 荷電粒子ビーム描画装置及び荷電粒子ビーム描画方法
NL2011276A (en) 2012-09-06 2014-03-10 Asml Netherlands Bv Inspection method and apparatus and lithographic processing cell.

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01152726A (ja) 1987-12-10 1989-06-15 Toshiba Corp 荷電ビーム描画方法
JP2501976B2 (ja) * 1990-08-27 1996-05-29 富士通株式会社 荷電粒子ビ―ム露光装置及び荷電粒子ビ―ムの制御方法
JP3169399B2 (ja) * 1990-09-20 2001-05-21 富士通株式会社 荷電粒子ビーム露光装置及びその制御方法
US5528048A (en) * 1994-03-15 1996-06-18 Fujitsu Limited Charged particle beam exposure system and method
JP3260611B2 (ja) * 1995-12-05 2002-02-25 株式会社東芝 荷電ビーム描画制御装置
JP3512946B2 (ja) * 1996-04-26 2004-03-31 株式会社東芝 電子ビーム描画装置および電子ビーム描画方法
JP2000114137A (ja) 1998-09-30 2000-04-21 Advantest Corp 電子ビーム露光装置及びアライメント方法
JP3047294B1 (ja) 1999-02-26 2000-05-29 株式会社日立製作所 電子ビ―ム描画方法および描画装置、ならびにそれを用いて製作したデバイス

Also Published As

Publication number Publication date
JP2008016608A (ja) 2008-01-24
KR100893245B1 (ko) 2009-04-17
US20080006778A1 (en) 2008-01-10
TW200815940A (en) 2008-04-01
JP5111798B2 (ja) 2013-01-09
US7741614B2 (en) 2010-06-22
KR20080004389A (ko) 2008-01-09

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