TWI366287B - Semiconductor light-emitting device and manufacturing method thereof - Google Patents

Semiconductor light-emitting device and manufacturing method thereof

Info

Publication number
TWI366287B
TWI366287B TW097113002A TW97113002A TWI366287B TW I366287 B TWI366287 B TW I366287B TW 097113002 A TW097113002 A TW 097113002A TW 97113002 A TW97113002 A TW 97113002A TW I366287 B TWI366287 B TW I366287B
Authority
TW
Taiwan
Prior art keywords
manufacturing
emitting device
semiconductor light
semiconductor
light
Prior art date
Application number
TW097113002A
Other languages
English (en)
Other versions
TW200905929A (en
Inventor
Hisa Yoshihiro
Yamaguchi Tsutomu
Nishida Takehiro
Hiramatsu Kenji
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Publication of TW200905929A publication Critical patent/TW200905929A/zh
Application granted granted Critical
Publication of TWI366287B publication Critical patent/TWI366287B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4031—Edge-emitting structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/023—Mount members, e.g. sub-mount members
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0425—Electrodes, e.g. characterised by the structure
    • H01S5/04254—Electrodes, e.g. characterised by the structure characterised by the shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2301/00—Functional characteristics
    • H01S2301/14—Semiconductor lasers with special structural design for lasing in a specific polarisation mode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0233—Mounting configuration of laser chips
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0233—Mounting configuration of laser chips
    • H01S5/0234—Up-side down mountings, e.g. Flip-chip, epi-side down mountings or junction down mountings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0235—Method for mounting laser chips
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0235—Method for mounting laser chips
    • H01S5/02355—Fixing laser chips on mounts
    • H01S5/0237—Fixing laser chips on mounts by soldering

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
TW097113002A 2007-07-17 2008-04-10 Semiconductor light-emitting device and manufacturing method thereof TWI366287B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2007185614A JP4967875B2 (ja) 2007-07-17 2007-07-17 半導体発光装置及びその製造方法

Publications (2)

Publication Number Publication Date
TW200905929A TW200905929A (en) 2009-02-01
TWI366287B true TWI366287B (en) 2012-06-11

Family

ID=40264811

Family Applications (1)

Application Number Title Priority Date Filing Date
TW097113002A TWI366287B (en) 2007-07-17 2008-04-10 Semiconductor light-emitting device and manufacturing method thereof

Country Status (5)

Country Link
US (2) US7653107B2 (zh)
JP (1) JP4967875B2 (zh)
KR (1) KR100995110B1 (zh)
CN (1) CN101350500B (zh)
TW (1) TWI366287B (zh)

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US8483831B1 (en) 2008-02-15 2013-07-09 Holaira, Inc. System and method for bronchial dilation
WO2009137819A1 (en) 2008-05-09 2009-11-12 Innovative Pulmonary Solutions, Inc. Systems, assemblies, and methods for treating a bronchial tree
US8361043B2 (en) * 2009-01-07 2013-01-29 Spiracur Inc. Reduced pressure therapy of the sacral region
JP2011049295A (ja) * 2009-08-26 2011-03-10 Toshiba Corp 半導体レーザ装置
CN102639077B (zh) 2009-10-27 2015-05-13 赫莱拉公司 具有可冷却的能量发射组件的递送装置
KR101820542B1 (ko) 2009-11-11 2018-01-19 호라이라 인코포레이티드 조직을 치료하고 협착을 제어하기 위한 방법, 기구 및 장치
US8891579B1 (en) 2011-12-16 2014-11-18 Nlight Photonics Corporation Laser diode apparatus utilizing reflecting slow axis collimators
JP5962522B2 (ja) * 2012-03-22 2016-08-03 日亜化学工業株式会社 半導体レーザ装置
US9705289B2 (en) 2014-03-06 2017-07-11 Nlight, Inc. High brightness multijunction diode stacking
US9720145B2 (en) 2014-03-06 2017-08-01 Nlight, Inc. High brightness multijunction diode stacking
US10761276B2 (en) 2015-05-15 2020-09-01 Nlight, Inc. Passively aligned crossed-cylinder objective assembly
EP3417340A1 (en) 2016-02-16 2018-12-26 NLIGHT, Inc. Passively aligned single element telescope for improved package brightness
CN109075524B (zh) 2016-03-18 2021-09-03 恩耐公司 用以提高亮度的光谱复用二极管泵浦模块
JP6814887B2 (ja) 2016-12-23 2021-01-20 エヌライト，インコーポレーテッド 低コスト光ポンプレーザパッケージ
JP6210186B1 (ja) * 2017-03-23 2017-10-11 三菱電機株式会社 光半導体素子
US10763640B2 (en) 2017-04-24 2020-09-01 Nlight, Inc. Low swap two-phase cooled diode laser package
WO2019157092A1 (en) 2018-02-06 2019-08-15 Nlight, Inc. Diode laser apparatus with fac lens out-of-plane beam steering

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JPH01253293A (ja) * 1988-03-31 1989-10-09 Yamaha Motor Co Ltd プリント配線基板及びその製造方法
JPH06334262A (ja) * 1993-03-23 1994-12-02 Mitsubishi Electric Corp 半導体レーザアレイ装置，半導体レーザ装置，及びそれらの製造方法
JPH108288A (ja) 1996-06-14 1998-01-13 Dainippon Printing Co Ltd めっき用原版とそれを用いた金属薄膜の形成方法、及びめっき用原版の製造方法
US6281524B1 (en) * 1997-02-21 2001-08-28 Kabushiki Kaisha Toshiba Semiconductor light-emitting device
JPH10261598A (ja) 1997-03-17 1998-09-29 Oki Electric Ind Co Ltd メッキ電極の形成方法
JP3629365B2 (ja) * 1998-05-29 2005-03-16 新日本無線株式会社 金属バンプの形成方法
JP2000312049A (ja) 1999-04-27 2000-11-07 Fuji Photo Film Co Ltd 半導体光機能装置
US6585510B2 (en) * 1999-07-20 2003-07-01 Smith Mountain Properties, Llc. Venting plate for a containerized candle
JP4897133B2 (ja) * 1999-12-09 2012-03-14 ソニー株式会社 半導体発光素子、その製造方法および配設基板
JP2002141598A (ja) * 2000-11-02 2002-05-17 Furukawa Electric Co Ltd:The 光モジュールの製造方法、光モジュール及び光モジュールの製造装置
JP2002171021A (ja) * 2000-11-30 2002-06-14 Toshiba Corp 半導体レーザ、半導体レーザの製造方法および半導体レーザの実装方法
JP3970530B2 (ja) * 2001-02-19 2007-09-05 三菱電機株式会社 半導体装置およびその製造方法
JP2004096088A (ja) * 2002-07-10 2004-03-25 Fuji Photo Film Co Ltd 合波レーザー光源および露光装置
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JP4583058B2 (ja) * 2003-03-31 2010-11-17 三洋電機株式会社 半導体レーザ素子
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JP2005129584A (ja) * 2003-10-21 2005-05-19 Sony Corp 半導体レーザ装置および半導体レーザ素子の実装方法ならびに半導体レーザ素子実装装置
JP2005191209A (ja) * 2003-12-25 2005-07-14 Matsushita Electric Ind Co Ltd 半導体レーザ装置およびその製造方法
JP4342495B2 (ja) * 2005-09-27 2009-10-14 三洋電機株式会社 半導体レーザ装置
CN100505446C (zh) * 2005-09-30 2009-06-24 夏普株式会社 半导体激光器件
US7436868B2 (en) * 2005-11-22 2008-10-14 Nlight Photonics Corporation Modular diode laser assembly

Also Published As

Publication number Publication date
US20100093118A1 (en) 2010-04-15
KR100995110B1 (ko) 2010-11-22
US7653107B2 (en) 2010-01-26
CN101350500B (zh) 2012-05-30
JP2009026801A (ja) 2009-02-05
US20090022197A1 (en) 2009-01-22
KR20090008115A (ko) 2009-01-21
CN101350500A (zh) 2009-01-21
TW200905929A (en) 2009-02-01
JP4967875B2 (ja) 2012-07-04
US7947517B2 (en) 2011-05-24

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