TWI366229B - Etching gas control system - Google Patents

Etching gas control system

Info

Publication number
TWI366229B
TWI366229B TW097114125A TW97114125A TWI366229B TW I366229 B TWI366229 B TW I366229B TW 097114125 A TW097114125 A TW 097114125A TW 97114125 A TW97114125 A TW 97114125A TW I366229 B TWI366229 B TW I366229B
Authority
TW
Taiwan
Prior art keywords
control system
etching gas
gas control
etching
gas
Prior art date
Application number
TW097114125A
Other languages
English (en)
Other versions
TW200845182A (en
Inventor
Kun Joo Park
Hwan Kook Chae
Byoungil Lee
Kee Hyun Kim
Weon Mook Lee
Original Assignee
Dms Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Dms Co Ltd filed Critical Dms Co Ltd
Publication of TW200845182A publication Critical patent/TW200845182A/zh
Application granted granted Critical
Publication of TWI366229B publication Critical patent/TWI366229B/zh

Links

Classifications

    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05D—SYSTEMS FOR CONTROLLING OR REGULATING NON-ELECTRIC VARIABLES
    • G05D11/00—Control of flow ratio
    • G05D11/02—Controlling ratio of two or more flows of fluid or fluent material
    • G05D11/13—Controlling ratio of two or more flows of fluid or fluent material characterised by the use of electric means
    • G05D11/131—Controlling ratio of two or more flows of fluid or fluent material characterised by the use of electric means by measuring the values related to the quantity of the individual components
    • G05D11/132—Controlling ratio of two or more flows of fluid or fluent material characterised by the use of electric means by measuring the values related to the quantity of the individual components by controlling the flow of the individual components
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67069—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67253—Process monitoring, e.g. flow or thickness monitoring

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Automation & Control Theory (AREA)
  • Plasma & Fusion (AREA)
  • Drying Of Semiconductors (AREA)
TW097114125A 2007-05-04 2008-04-18 Etching gas control system TWI366229B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020070043432A KR100872312B1 (ko) 2007-05-04 2007-05-04 에칭가스 제어시스템

Publications (2)

Publication Number Publication Date
TW200845182A TW200845182A (en) 2008-11-16
TWI366229B true TWI366229B (en) 2012-06-11

Family

ID=39938703

Family Applications (1)

Application Number Title Priority Date Filing Date
TW097114125A TWI366229B (en) 2007-05-04 2008-04-18 Etching gas control system

Country Status (4)

Country Link
US (1) US20080271762A1 (zh)
KR (1) KR100872312B1 (zh)
CN (1) CN100585804C (zh)
TW (1) TWI366229B (zh)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101386552B1 (ko) * 2009-08-20 2014-04-17 도쿄엘렉트론가부시키가이샤 플라즈마 처리 장치 및 방법과 플라즈마 에칭 처리 장치 및 방법
KR101048193B1 (ko) * 2009-08-28 2011-07-08 주식회사 디엠에스 에칭가스 제어시스템
CN103003924B (zh) * 2010-06-28 2015-07-08 东京毅力科创株式会社 等离子体处理装置及方法
US20180166300A1 (en) * 2016-12-13 2018-06-14 Lam Research Ag Point-of-use mixing systems and methods for controlling temperatures of liquids dispensed at a substrate
CN106711066A (zh) * 2016-12-27 2017-05-24 武汉华星光电技术有限公司 干蚀刻反应设备及用于干蚀刻反应的气体喷嘴
KR102088210B1 (ko) * 2020-01-31 2020-03-12 (주)아이솔루션 반도체 공정 챔버의 벤트 조절 장치

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100332313B1 (ko) * 2000-06-24 2002-04-12 서성기 Ａｌｄ 박막증착장치 및 증착방법
US6333272B1 (en) * 2000-10-06 2001-12-25 Lam Research Corporation Gas distribution apparatus for semiconductor processing
JP3403181B2 (ja) * 2001-03-30 2003-05-06 東京エレクトロン株式会社 熱処理装置及び熱処理方法
US6418954B1 (en) * 2001-04-17 2002-07-16 Mks Instruments, Inc. System and method for dividing flow
US20030070620A1 (en) * 2001-10-15 2003-04-17 Cooperberg David J. Tunable multi-zone gas injection system
US7169231B2 (en) * 2002-12-13 2007-01-30 Lam Research Corporation Gas distribution system with tuning gas
JP4559202B2 (ja) * 2004-07-30 2010-10-06 東京エレクトロン株式会社 プラズマエッチング装置
JP4895167B2 (ja) * 2006-01-31 2012-03-14 東京エレクトロン株式会社 ガス供給装置，基板処理装置，ガス供給方法
JP2007211326A (ja) * 2006-02-13 2007-08-23 Nec Electronics Corp 成膜装置および成膜方法

Also Published As

Publication number Publication date
TW200845182A (en) 2008-11-16
CN101299406A (zh) 2008-11-05
KR100872312B1 (ko) 2008-12-05
CN100585804C (zh) 2010-01-27
KR20080098137A (ko) 2008-11-07
US20080271762A1 (en) 2008-11-06

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Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees