1363430 九、發明說明： 【發明所屬之技術領域】 本發明係關於一種太陽能電池之邊緣隔離設備及方 法。 【先前技術】 圖1顯示一種習知太陽能電池之結構示意圖。如圖1 所不，傳統的太陽能電池包含一第一型（譬如p型）半導 體層111、一第二型（譬如N型）半導體層112、一抗反射 層113、一正面電極114、一背面金屬層115及一背面電 極 116。 第一型半導體層111具有一正面niF及—背面1UB 以及複數個側面111S，此等側面llls連接至正面“π 及背面111B。第二型半導體層112位於第一型半導體層 111之正面U 1F上。由於第二型半導體層112是藉由 於一部分的第一型半導體層lu進行摻雜所形成，9所r 第一型半導體層Π2會包覆此等側面ills。 、1363430 IX. Description of the Invention: [Technical Field of the Invention] The present invention relates to an edge isolation device and method for a solar cell. [Prior Art] Fig. 1 shows a schematic structural view of a conventional solar cell. As shown in FIG. 1, a conventional solar cell includes a first type (such as p-type) semiconductor layer 111, a second type (such as N-type) semiconductor layer 112, an anti-reflection layer 113, a front electrode 114, and a back surface. A metal layer 115 and a back electrode 116. The first type semiconductor layer 111 has a front surface niF and a back surface 1UB and a plurality of side surfaces 111S connected to the front surface "π and the back surface 111B. The second type semiconductor layer 112 is located on the front surface of the first type semiconductor layer 111 U 1F Since the second type semiconductor layer 112 is formed by doping a part of the first type semiconductor layer lu, the nine r type first semiconductor layers 会2 cover the side ills.
抗反射層113形成於第二型半導體層η]上 電極114局部埋入抗反射層及第二型 面 . f艰層 1 1 〇 中並局部露出於外界。 2 为面金屬層115形成於第一型半導體層 111B。背面電極116形成於第一型半導體層lu之背面 me並局部埋入於背面金屬層115 之背面 界。 η丨路出於外 因此，正面電極114、第二型半導體層U2、 屬層11 5及背面電# i J 6 t使太陽能電池的面金 73 ^電p且 5 1363430 因而降低太陽 (Shunt resistance)降低而導致漏電流變大 能電池的光電轉換效率。 圖2顯示一種具有邊緣絕緣構造的習知太陽能電池 之結構示意圖。如® 2所示，為解決前述的漏電流過大 的問題，習知的作法是利用雷射切割或乾蝕刻的方式， 在邊緣切割出一道溝槽117,藉以阻斷從正面電極ιΐ4 到背面電極11 6的電流傳導路徑。 然而，此道切割必須將製作好的晶片逐一加工，而 且製作好的晶片通常具有四個邊緣，因此四個邊緣都要 進行邊緣絕緣的切割加工。為了控制設備之公差，所切 掉的邊緣通常具有一定的寬度，使得不少的有效面積會 被浪費掉’因而降低太陽能電池的效率。 因此，如何提供一種能有效提高太陽能電池的效率 之邊緣隔離設備及方法，實為本案所欲解決的問題。 【發明内容】 本發明之一個目的係提供一種能有效提高太陽能電 池的效率之邊緣隔離設備及方法。 為達上述目的，本發明提供一種太陽能電池之邊緣 隔離設備，其包含一承哉at® 3 艰載裝置、一驅動裝置以及一雷射 光束提供裝置。承栽#署系也 戰裝置承載一太陽能電池結構。太陽 能電池結構具有一坌—拥，上、於咖 ^ 弟 型+導體層及一第二型半導體 層。第一型半導體居且亡 -Γ 篮層一有一正面、一背面以及複數個側 面。此等側面連接$丨下品n北 ^ 按玍正面及寺面。第二型半導體層位於 第一型半導體層之正面 目女，每 ^ 並包覆此等側面，且具有複 6 1363430 數個包覆面平行於此等側面^驅動裝置連接至承載裝置， 用以轉動承載裝置。雷射光束提供裝置用以提供一雷射 光束至太陽能電池結構之此等包覆面來進行切削加工， 以局部移除第二型半導體層而露出第一型半導體層之此 等側面。本發明亦提供一種太陽能電池之邊緣隔離方法。 藉由本發明之具邊緣絕緣構造之太陽能電池及其製 ' 造方法，可以對於太陽能電池結構進行少量的邊緣絕緣 處理，降低廢料及無效面積，提升太陽能電池的效率， • 並同時能降低漏電流，使太陽能電池的光電轉換效率得 以有效地被提升。 為讓本發明之上述内容能更明顯易懂，下文特舉一 較佳實施例’並配合所附圖式，作詳細說明如下。 【實施方式】 圖3顯示依據本發明較佳實施例之太陽能電池之邊 緣隔離設備之示意圖。如圖3所示，本實施例之太陽能 電池之邊緣隔離設備包含一承載裝置210、一驅動裝置 w 220及一雷射光束提供裝置23〇。 承載裝置210用以承載一太陽能電池結構1。太陽能 電池結構1具有一第一型（譬如p或N型）半導體層11及 —第二型（譬如N或P型）半導體層12〇第一型半導體層 11具有一正面11F、一背面丨丨b以及複數個側面11 S。 此等側面11S連接至正面i1F及背面11B。第二型半導 體層12位於第一型半導體層11之正面11F上，並包覆 此等側面11S，且具有複數個包覆面1 2 C平行於此等側 7 面 11S。 二動裝置220連接至承載襄置21。，用以轉動承载裝 置 2 1 0 〇 雷射光束提供裝置230用以提供一雷射光束231至 太陽能電池結構1之此等包覆面Μ來進行切削加工， 以局部移除第二型半導體層12而露 之此等侧面US，如圖6所示。 ！牛导體盾 圖…顯示依據本發明較佳實施例之太陽能電池 之邊緣隔離設備之焦㈣整示意圖。如圖4所示，在轉 動太陽能電池結構，雷射光束提供裝置23〇與包覆 面12C之間的距離從D變成d。雖然還是可以進行邊緣 移：’但疋於一例子中’如圖5所示，為了使雷射光束 j可以正確對焦於側面US丨’在轉動太陽能電池結 構1時，驅動裝置220更可以移動承載裝置21〇，以使 雷射光束提供裝置23 0盥i卜笪4 It二，The anti-reflection layer 113 is formed on the second type semiconductor layer η]. The electrode 114 is partially embedded in the anti-reflection layer and the second surface. The hard layer 1 1 〇 is partially exposed to the outside. 2 is a surface metal layer 115 formed on the first type semiconductor layer 111B. The back surface electrode 116 is formed on the back surface me of the first type semiconductor layer lu and partially buried in the back surface of the back metal layer 115. Therefore, the front electrode 114, the second type semiconductor layer U2, the genus layer 11 5, and the back side electricity # i J 6 t make the surface of the solar cell 73 ^ electrically p and 5 1363430 thus reduce the sun (Shunt resistance The photoelectric conversion efficiency of the battery can be reduced by reducing the leakage current. Fig. 2 shows a schematic structural view of a conventional solar cell having an edge insulating structure. As shown in the ® 2, in order to solve the above problem of excessive leakage current, it is a conventional method to cut a trench 117 at the edge by laser cutting or dry etching, thereby blocking the front electrode ι4 to the back electrode. 11 6 current conduction path. However, this cutting must process the fabricated wafers one by one, and the prepared wafer usually has four edges, so the four edges are subjected to edge insulation cutting. In order to control the tolerances of the equipment, the cut edges usually have a certain width, so that a large number of effective areas are wasted' thus reducing the efficiency of the solar cell. Therefore, how to provide an edge isolation device and method capable of effectively improving the efficiency of a solar cell is the problem to be solved in this case. SUMMARY OF THE INVENTION One object of the present invention is to provide an edge isolation apparatus and method that can effectively improve the efficiency of a solar cell. To achieve the above object, the present invention provides an edge isolation device for a solar cell comprising a 哉at® 3 hard load device, a driving device and a laser beam providing device. The plantation unit also carries a solar cell structure. The solar cell structure has a stack of layers, a top layer, a ceramic layer + a conductor layer and a second type semiconductor layer. The first type of semiconductor lives and dies - Γ The basket has a front side, a back side, and a plurality of side surfaces. These side connections are $丨下品n北^ Press the front and the temple. The second type semiconductor layer is located on the front side of the first type semiconductor layer, and covers each of the sides, and has a plurality of cladding surfaces parallel to the side surface driving device connected to the carrying device for Rotate the carrier. The laser beam providing means is adapted to provide a laser beam to the cladding of the solar cell structure for cutting to partially remove the second type of semiconductor layer to expose the sides of the first type of semiconductor layer. The invention also provides an edge isolation method for a solar cell. According to the solar cell with the edge insulation structure of the present invention and the manufacturing method thereof, a small amount of edge insulation treatment can be performed on the solar cell structure, the waste and the ineffective area can be reduced, the efficiency of the solar cell can be improved, and leakage current can be reduced at the same time. The photoelectric conversion efficiency of the solar cell is effectively improved. In order to make the above description of the present invention more comprehensible, the following description of the preferred embodiments of the present invention will be described in detail below. Embodiments Fig. 3 is a view showing an edge isolation device for a solar cell according to a preferred embodiment of the present invention. As shown in FIG. 3, the edge isolation device for a solar cell of the present embodiment includes a carrier device 210, a driving device w220, and a laser beam providing device 23A. The carrying device 210 is used to carry a solar cell structure 1. The solar cell structure 1 has a first type (such as p or N type) semiconductor layer 11 and a second type (such as N or P type) semiconductor layer 12. The first type semiconductor layer 11 has a front surface 11F and a back surface. b and a plurality of sides 11 S. These side faces 11S are connected to the front side i1F and the back side 11B. The second type semiconductor layer 12 is disposed on the front surface 11F of the first type semiconductor layer 11 and covers the side surfaces 11S, and has a plurality of cladding surfaces 1 2 C parallel to the side 7 sides 11S. The second moving device 220 is connected to the carrying device 21. For rotating the carrier 2 1 〇 laser beam providing device 230 for providing a laser beam 231 to the cladding of the solar cell structure 1 for cutting to partially remove the second semiconductor layer 12, such side US, as shown in Figure 6. ! Cattle Shield Figure... shows a schematic view of a focal (four) of an edge isolation device for a solar cell in accordance with a preferred embodiment of the present invention. As shown in Fig. 4, in the rotating solar cell structure, the distance between the laser beam providing means 23 and the cladding surface 12C is changed from D to d. Although the edge shift can still be performed: 'But in an example', as shown in FIG. 5, in order to make the laser beam j correctly focus on the side US丨', when the solar cell structure 1 is rotated, the driving device 220 can further move the bearing. The device 21〇 is such that the laser beam providing device 23 0盥i 笪 4 It 2,
維持固定。置3〇」匕專包覆面以之間的距離D 或者’於另一例子中，雷射光束提供裝置230係可 束231之強度(或焦距)，以因應於雷射光束 八裝置230與此等包覆面12C：之間變動的距離d。 因此&據本發明之太陽能電池之邊緣隔離 =下步驟。首先’以承载裝置21〇承载太陽能電池結 ，卜接者，以驅動裝置220轉動承载裝置21〇 電雷=供裝置23。依序提供雷射光束231至太陽時能 卞等體層12而路出第—型半導體層丨丨之 1363430 此等側面π. s。 圖 7 Q gg -.. 址 _ 網不適用於本發明之其他數種太陽能電池 構=不意圖。值得注意的是，切削前的太陽能電池結 ^更包3 —抗反射層13，位於第二型半導體層12 上’如圖7所示。 或者，切削前的太陽能電池結構丨"可以更包含一正 14其局。卩埋入抗反射層及第二型半導體層η 、局邛路出於外界’如冑8戶斤示。或者切削前的太 陽能電池結構1…可以更包含：—背面金屬層15，其形 成於第型半導體層11之背面;及一背面電極16， 其形成於第一型羊導體層U之背面11B並局部埋入於背 面金屬層15巾’且局部露出於外界，如圖9所示。 藉由本發明之具邊緣絕緣構造之太陽能電池及豆製 造方法，可以對於太陽能電池結構進行少量的邊緣絕緣 處理，降低廢料及無效面積，提升太陽能電池的效率，Maintain fixed. 3) 匕 匕 匕 匕 以 以 以 或者 或者 或者 或者 或者 或者 或者 或者 或者 或者 于 于 于 于 于 于 于 于 于 于 于 于 于 于 于 于 于 于 于 于 于 于 于 于 于 于 于 于 于 于 于These coating faces 12C: the distance d that varies between them. Therefore & edge isolation of the solar cell according to the invention = next step. First, the solar cell junction is carried by the carrying device 21, and the carrier 220 is rotated by the driving device 220. The laser beam 231 is sequentially supplied to the sun to circumscribe the body layer 12 and the first type semiconductor layer 路 1363430 is π. s. Fig. 7 Q gg -.. address _ net is not applicable to several other solar cell structures of the present invention = not intended. It is worth noting that the solar cell junction before cutting is further provided with an antireflection layer 13 on the second type semiconductor layer 12 as shown in FIG. Or, the solar cell structure before cutting can be more than one.卩 embedded in the anti-reflection layer and the second type semiconductor layer η, the road is out of the outside world, such as 户8 households. Or the solar cell structure 1 before cutting may further include: a back metal layer 15 formed on the back surface of the first semiconductor layer 11; and a back surface electrode 16 formed on the back surface 11B of the first type sheep conductor layer U and Partially buried in the back metal layer 15 'and partially exposed to the outside, as shown in FIG. According to the solar cell and the bean manufacturing method with the edge insulation structure of the present invention, a small amount of edge insulation treatment can be performed on the solar cell structure, the waste and the ineffective area can be reduced, and the efficiency of the solar cell can be improved.
並同時能降低漏電流’使太陽能電池的光電轉換效率得 以有效地被提升。 吡权1主貫 ............施例僅 用以方便說明本發明之技術内容，而非將本發明狹義地 限制於上述實施例，在不超出本發明之精神及以下申社 專利範圍之情況，所做之種種變化實施，皆： 之範圍。 贤月 9 【圖式簡單說明] 圖1顯示一種習知太 圖2顯示一種且右此池之結構不意圖。 之結構示意圖。 構&的^知太陽能電池 圖3顯示依據本發明較佳 緣隔離設備之示意圖。 ^•例之太陽能電池之邊 圖4與5顯示依據本發明梦 月較佳實施例之太陽能電池 之邊緣隔離6又備之焦距調整示意圖。 圖6顯示利用本發明 之逯緣隔離設備所製造出來的 太陽能電池結構之示意圖。 圖7至9顯示適用於本發明之其他數種太陽能電池 、··吉構之示意圖。 【主要元件符號說明】At the same time, the leakage current can be lowered to make the photoelectric conversion efficiency of the solar cell effectively improved. The present invention is only for convenience of explaining the technical content of the present invention, and is not intended to limit the present invention narrowly to the above embodiments without departing from the spirit of the present invention. And in the case of the following patent scope of the Shenshe, all changes made are:贤月 9 [Simplified illustration of the drawing] Figure 1 shows a conventional one. Figure 2 shows one and the structure of the right pool is not intended. Schematic diagram of the structure. A solar cell of the structure & Figure 3 shows a schematic view of a preferred edge isolation device in accordance with the present invention. The side of the solar cell of the example is shown in Figs. 4 and 5 for the adjustment of the focal length of the solar cell according to the preferred embodiment of the present invention. Fig. 6 is a view showing the structure of a solar cell manufactured by the rim isolation apparatus of the present invention. Figures 7 to 9 show schematic diagrams of several other solar cells, which are suitable for use in the present invention. [Main component symbol description]
1、厂、1”、1"’ ：太陽能電池結構 11 :第一型半導體層 11Β :背面 11F :正面 11 S :側面 12 :第二型半導體層 12C :包覆面 13 :抗反射層 14 :正面電極 1 5 :背面金屬層 1 6 :背面電極 10 1363430 111 ： 第一型半導體層 11 IB :背面 111F :正面 111S :側面 112 ： 第二型半導體層 113 ： 抗反射層 114 ·· 正面電極 115 ： 背面金屬層 116 : 背面電極 117 ： 溝槽 210 ： 承載裝置 220 ： 驅動裝置 230 ： 雷射光束提供裝置 231 ： 雷射光束 111. Plant, 1", 1"': Solar cell structure 11: First type semiconductor layer 11A: Back surface 11F: Front side 11 S: Side surface 12: Second type semiconductor layer 12C: Covering surface 13: Antireflection layer 14: Front electrode 1 5 : Back metal layer 16 : Back surface electrode 10 1363430 111 : First type semiconductor layer 11 IB : Back surface 111F : Front side 111S : Side surface 112 : Second type semiconductor layer 113 : Antireflection layer 114 · Front electrode 115 : Back metal layer 116 : Back electrode 117 : Trench 210 : Carrying device 220 : Driving device 230 : Laser beam providing device 231 : Laser beam 11