TWI359341B - Voltage generate apparatus - Google Patents

Description

1359341 NVT-2007-106 26897twf.doc/p IX. Description of the Invention: [Technical Field] The present invention relates to a voltage generating device, and more particularly to a battery generating device having temperature compensation capability. ... one -- — —__________________ In all electronic systems, there are always irreplaceable analog circuits. In order to pursue the stability of circuit performance, these analog circuits mostly need an accurate reference power supply. Therefore, many different voltage generations are designed. Shouting some voltage generating devices is mainly to provide the associated "糸, - an accurate reference voltage. And the most important subject, the output voltage generated can have self-reinforcing monthly b force when the temperature changes" without Please refer to the figure!, Figure! shows the conventional voltage production _ is the use of the two inputs of the amplifier is willing to 'by the resistors R1, R2, and with the transistor Q3. In addition, 'voltage generation The device 100 has a negative temperature coefficient by using the voltage across the base and the conduction current has a positive temperature coefficient. However, the voltage generating device 1 can be operated, and the required system voltage must be Limiting the connection to meet the requirements of low operation. The conventional voltage generating device details are generated as described above; 1359341

NVT-2007-106 26897twf.doc/p A modification of 100 is a voltage generating device that can operate at low system voltages. The voltage generating device 200 only needs to newly add four resistors RA1, rA2, Rbi and V voltage generating device 2〇〇 to the voltage generating device. The circuit principle is that the terminal 1 voltage and the terminal 仏 voltage are caused by the amplification of n AMP. The same, and because the resistance, resistance & resistance are equal, the voltage is also phase (five). Since then, the 'transferable' ink VQUT is as shown in the following formula (1): νουτ =

R2

R2 R1

VTlnN Ο) where R2 = Ra, +RA2 = RB1+RB2 ' Veb2 is the voltage difference between the emitter and the base of the transistor Q2, the area of the transistor Q1 is N times that of the transistor Q2, and Vt is the transistor Q1 Turn-on voltage. However, this architecture still uses the bipolar junction transistor (BJT) Qb Q2 and multiple resistors to complete the temperature compensation. The required wafer area and process cost will be relatively increased, resulting in cost. The burden on this is a considerable disadvantage. SUMMARY OF THE INVENTION The present invention provides a voltage generating device having a temperature compensation function. The voltage generating device requires only a very low system voltage and does not require a resistor, an effective node, and a circuit area. The present invention provides a voltage generating device having a temperature compensation function including a current generator, a switch, a transistor, and a capacitor switch. Wherein, the electric W is generated to generate the first current ' and the first current is mirrored, and the 1359341 NVT-2007-106 26897twf.doc/p terminal is electrically connected to the ground or the output of the amplifier. In addition, the third built-in switch electrically connects or disconnects the second input of the amplifier to the output of the amplifier according to the control signal. ° The present invention uses a transistor to receive different currents to generate different cross-f' reuse capacitor switching circuits to subtract these voltages and generate an output voltage. Therefore, it is not necessary to use a resistor and only need to drive-current The low system voltage of the source effectively saves circuit area and power loss. The above described features and advantages of the present invention will become more apparent from the following description. [Embodiment] Hereinafter, the present invention will be described in more detail with reference to a plurality of embodiments of the present invention. The period is made easier for those with ordinary knowledge in the field and can be implemented accordingly. Referring first to Figure 3A, Figure 3A shows a schematic diagram of a voltage generating device in accordance with a first embodiment of the present invention. The voltage generating device 300 includes a current generator 310, a switch 320, a transistor Mil, and a capacitance switcher 330. The current generator 310 includes current sources 311 313 313, the current source 311 generates a first current Π ' and the current source 312 and the current source 313 are the first current η generated by the mirror current source 3U to generate a second current Π. And the first electricity is at 13. The self-mirror situation can be achieved by a conventional current mirror circuit, which is not described here. The focus is on the first current II and the second current 12 generated by the current sources 311 to 313, respectively. The output of the third current 13 1359341 NVT-2007-106 26897twf.d〇c/p is electrically connected or disconnected. Since the switch 320 in the voltage generating device 3 and the built-in switches 410 to 430 in the capacitor switch 330 are both operated according to the control signal CTL, it can be known that the built-in switches 41 〇 43 43 are switched. The connection relationship of the built-in capacitors C1 to C3 has a one-fixed relationship with the current received by the transistor Mil (the second current blue-electric | D). - The following - will describe the circuit connection relationship generated in the first embodiment, in conjunction with the implementation of the capacitor switch 330 shown in FIG. 4 (including the transistor Mil and the current sources 312, 313 and the built-in The connection relationship between the capacitors C1 to C3). Please refer to FIG. 5A and FIG. 5B at the same time. 5A and 5B respectively show equivalent circuit diagrams of circuit connection relationships caused by different control signals. When the transistor Mil receives the second current 12. (that is, the transistor Mil is connected to the current source 312), the second end of the built-in capacitor C2 is electrically connected to the first end of the built-in capacitor C1, and the built-in capacitor C3 The second end is electrically connected to the ground GND, and the second input of the amplifier AMP is electrically connected to the turn-out end of the amplifier AMP (as shown in FIG. 5A). On the other hand, when the transistor Mil receives the third current 13 (that is, the transistor Mil is connected to the current source 313), and the second terminal of the built-in capacitor C2 is electrically connected to the ground GND, the built-in capacitor C3 The two ends are electrically connected to the output end of the amplifier AMP, and the second input end of the amplifier AMP is disconnected from the output end of the amplifier AMP (as shown in FIG. 5B), and the first voltage VGS1 at this time is hereinafter* It is recalled in the built-in capacitor C1 of the electric-capacitor-switching circuit 330. It can be known from the equivalent circuit shown in FIG. 5A and FIG. 5B that the relationship between the output voltage VOUT and the voltage across the VGS1 and the voltage across the VGS2 will be as in the 1359341 NVT-2007-106 26897 twf. doc/p (2) It is shown that: V〇UT = g[l + ^)vGs2_VGsi] (2) Since the cross voltage VGS1 and the cross voltage vGS2 have the same temperature coefficient, it is known that the voltage generating device 300 has the capability of temperature compensation. Further, the temperature compensation coefficient of the voltage generating device 300 and the voltage value of the output voltage ν 〇υ τ can be adjusted by the value of the capacitors C1 to C3. Second Embodiment: Next, a more complete embodiment will be presented to explain an embodiment of the voltage generating device of the present invention. Please refer to FIG. 6. FIG. 6 is a schematic diagram of a voltage generating device according to a second embodiment of the present invention. In the voltage generating device 600, the current sources 611 to 613 in the current generator 610 are constructed by transistors [018] to 10, respectively. The bias transistor is constructed by transistor M3 and transistor Μ4. Further, the 'in the current generator 610' further includes the use of the transistor mi, the transistor M2, and the transistors M5 to M7 to provide an electric crystal M3 bias signal as a bias transistor. Further, the current generator 61A also adds a start-up circuit formed by the electric crystals Mci to Mo to stabilize the above-described bias circuit at the time of circuit startup. The switch 620 is constructed by the transistor MSI and the transistor MS2. The heterogeneous transistor MS-1- is controlled by the control signal CTL, and the transistor |MS2 is controlled by the control signal CTL' and the control signal CTL is controlled. The logical reverse signal of the signal CTL. That is, when the control signal CTL is at the logic low level 12 1359341 NVT-2007-106 26897 twf.doc/p bit, the transistor MS2 is turned on and the transistor MSI is turned off, and the transistor Mil receives the current generated by the current source 613. Conversely, when the control signal CTL is at a logic high level, the transistor MSI is turned on and the transistor MS2 is turned off, and the transistor Mil receives the current generated by the current source 612. Further, in the case of the capacitance switcher 630, the transistors MB1 to MB4 and the transistors Μ01 to ΝΪ05 are isomorphic to the 634, and the output voltage VOUT is generated. The built-in switch 631 is constructed by transistors MS3 and MS4, the transistor MS3 is controlled by the control signal CTL and the transistor MS4 is controlled by the control signal CTL. The opposite 'built-in switch 632' is constructed by transistors MS5, MS6, which is controlled by the control signal CTL and the transistor MS5 is controlled by the control signal ^TL. The built-in switch 633 is controlled by the transistor MS7' transistor MS7 from the control signal CTL. The detailed operation details of the voltage generating device 600 are similar to those of the first-exemplified voltage generating device 3 described above, and will not be described again. ► The present invention utilizes a switch to cause the transistor to receive different currents = voltage; minus: to obtain an output voltage. In addition, it is not necessary to reduce the power consumption of the double-effect and the power-saving, and further reduce the cost, and the person having the general knowledge in the technical field of the L-gen is not included in the second invention. The change and retouching, the protection of the Maoyue is attached to the application of the special c S) 13 1359341 NVT-2007-106 26897twf.doc/p. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 and Fig. 2 respectively show different conventional voltage generating devices. FIG. 3A is a schematic diagram of a voltage generating device according to a first embodiment of the present invention—FIG. 3B illustrates the first embodiment of the present invention. A schematic diagram of another embodiment of a voltage generating device of an embodiment. ® Figure 4 illustrates an embodiment of a capacitor switch 330 in a first embodiment of the present invention. FIG. 5A and FIG. 5B are respectively schematic diagrams showing an equivalent circuit of a frost connection relationship caused by different control signals. Fig. 6 is a view showing the voltage generating device of the second embodiment of the present invention. [Description of main component symbols] Lu 100, 2〇〇, 3〇〇, 6〇〇: voltage generating devices 310, 610: current generators 311 to 313, 611 to 613: current sources 320, 410 to 430, 620, 631 ~ 633 : Switch 330, 630 : Capacitor switch CTL, CTL · Control signal . . . GND : Ground terminal C1 ~ C3 : Capacitor 1359341 NVT-2007-106 26897twf.doc / p II ~ 13 : Current R1 ~ R3 , Rai, Ra2, Rbi, Rb2. Resistor VOUT: output voltage AMP, 634: amplifier Q1, Q2, MB1, MB2, M1~Ml 1, MCI~MC3, MB1~MB4, MCM~M05, ~MS7-m: End point

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Claims (1)

Ί :: r Year (4) ··" —------- 100-11 attack~—10. Patent application scope: 1. A voltage generating device has temperature compensation function, including: * Soil-current generator And generating a first current, and mirroring the first current, thereby generating a second current and a third current, wherein the ratio of the first current, the second current, and the third current is 1: M: 1, M rational;; - - The switch has a first end, a second end and a control end, and the control terminal is terminated And a control signal, wherein the first end receives one of the second current and the third current according to the control signal; the mountain-one transistor has a first end, a second end, and a third end, and second, The third end is coupled to the second end of the switch, the first end of which is coupled to a ground end, and the transistor respectively generates a first cross-pressure and a second cross-pressure according to the switching action of the switch ; and ... ^, with a built-in capacitor and a number of built-in switches, ^ built-in switch according to her orbital change, the f tolerance The switching action of the built switch changes the connection relationship of the built-in capacitors, the ^=-span voltage and the second voltage across the voltage are subtracted, and the resulting capacitor switcher comprises: 1 an amplifier having a first input terminal, The second input=the first input end is lightly connected to the ground end, the output end of the output is: the first end of the:, the bean is first, the second is electrically connected to the electric crystal, and the connection is i (the fourth) The first end is electrically connected to the second end of the first S 16 1359341 capacitor; a first built-in switch electrically connects the second end of the second built-in capacitor to the control signal The first end of the grounding end and the first end of the first built-in capacitor is electrically connected to the second end of the first built-in capacitor; 'one... The second built-in switch electrically connects the second end of the third built-in capacitor to one of the ground end and the output end of the amplifier according to the control signal; and a second built-in switch according to the control signal So that the second input of the amplifier is electrically connected to the output of the amplifier Connect or disconnect. 2. The voltage generating device as described in item 1 of the patent application scope, | 3. As stated in the item Current; 17 S 1359341 The year of the year. The replacement page 丨丨 !-----W6-14-24 ..." and a third current source mirror the first current to generate the third current. 5. The voltage generating device of claim 4, wherein the current generator further comprises: a first bias transistor having a gate, a first source/drain, and a second source/drain The first source/drain receives the first current, the second source/drain is coupled to the ground, and a second bias transistor has a gate, a first source/drain, and a second The source/drain has a gate, a first source/drain coupled to the gate of the first bias transistor, and a second source/drain coupled to the ground. 6. The voltage generating device of claim 5, wherein the first biasing transistor operates in a saturation region and the second biasing transistor operates in a subcritical region. 7. The voltage generating device of claim 1, wherein the transistor is a gold oxide semiconductive crystal. 8. The voltage generating device of claim 7, wherein the first end of the transistor is a first source/drain, and the second end of the transistor is a second source/drain, the transistor The third end is the gate. 9. The voltage generating device of claim 1, wherein the transistor is a bipolar junction transistor. 10. The voltage generating device of claim 9, wherein the first end of the transistor is a collector, the second end of the transistor is an emitter, and the third end of the transistor is a base. 11. The voltage generating device according to claim 1, wherein the first span voltage is when the transistor receives the second by the switch. 18 1359341 ^^月23⁄4 Revision Replacement Page I 100-11-24 At the time of current, the voltage difference between the third end of the transistor and the second end of the transistor. 12. The voltage generating device of claim 1, wherein the second voltage is when the transistor receives the third current through the switch, the second end of the transistor and the transistor The voltage difference at the second end. S 19 1359341 2011 Figure 5A