1358240 九、發明說明： 【發明所屬之技術領域】 本發明有關於包含有利用遮罩蒸著法形成之由有機化 合物構成之發光層，形成有像素之圖案之有機電場發光裝 置及其製造方法。 【先前技術】 有機電場發光裝置是從陽極植入之電洞，和從陰極植 入之電子’在被兩極包夾之有機發光層6進行再結合藉以 發光者。其代表性之構造如第2圖所示，積層有形成在基 板1上之第1電極2，包含有至少由有機化合物構成之發 光層5之薄膜層，和第2電極6，利用驅動所產生之發光 ’從透明之電極側取出到外部。在此種有機電場發光裝置 中，可以成爲薄型，在低電壓驅動下進行高亮度發光，經 由選擇發光層之有機化合物可以進行多色發光，可以應用 在發光裝置或顯示器等。 在有機電場發光裝置之製造，需要對發光層等進行圖 案製作，其製作方法被進行過各種檢討。在要求微細之圖 案製作之情況時，代表性之手法是使用光刻法。在有機電 場發光裝置之第1電極之形成時，可以使用光刻法，但是 在發光層和第2電極之形成時’光刻法基本上是濕式處理 ，所以適用困難之情況很多。因此，在發光層或第2電極 之形成時，可以使用真空蒸著、濺散、化學氣相成長法（CVD) 等之乾式處理。利用此種處理對薄膜進行圖案形成之手段 ，大多以使用蒸著遮罩之遮罩蒸著法進行。 1358240 作爲顯示器而活用之有機電場發光裝置之發光層之圖 案之精細度相當的高。在單純矩陣方式中，發光層形成在 被圖案製作成條帶狀之第1電極上，但是第1電極之線幅 通常約1 ΟΟμηι以下，·其間距爲丨〇〇μιη程度β另外，第2電 極亦以與第1電極交叉之形式，以數百μπ1間距形成，其 細長電極之長度方向具有低電阻，而且幅度方向鄰接之電 極間需要完全絕緣。在動態矩陣方式中，發光層亦需要以 同等或以上之精細度被圖案製作。 因此’發光層之圖案製作所使用之蒸著遮罩亦必然需 要高精細度。遮罩構件之製造方法可以使用蝕刻法或機械 硏磨法、噴砂法、燒結法、雷射加工法、感光性樹脂之利 用等’但是大多使用微細圖案加工精確度優良之蝕刻法或 電鑄法。 另外，當遮罩構件變厚時，由於蒸著角度會發生陰影 ，發明圖案之模糊，所以精細度之要求越高，需要使遮罩 構件之厚度越薄。發光層用之遮罩構件之厚度通常爲 ΙΟΟμηι以下，一般被固定和保持在窗框之框架，使用在蒸 著工程。 在發光層之形成所使用之蒸著遮罩之遮罩構件，存在 有開口區域9，被開口 1〇之外緣區畫，其配置用來在母材 上進行與遮罩區域7之圖案形成（第3圖）。這時，依照遮 罩之製作條件，在遮罩區域和開口區域之間產生應力差， 會有在其境界部分（第3 (a)圖之虛線部）局部產生撓屈之問 題。當使用此種蒸著遮罩時’在發生有撓屈之遮罩區域和 1358240 制遮罩構件之局部之撓屈。 另外之多倒角用之蒸著遮罩習知者是使條帶狀之第1 遮罩構件和用以限制蒸著範圍之第2遮罩構件重疊所構成 之蒸著遮罩（例如，參照日本國專利第2 00 3 -6 8 4 5 4號公報） ，但是不能達成本發明所解決之問題之使遮罩構件之局部 撓屈不會影響到發光區域。另外，因爲需要將條帶狀之遮 罩構件和第2遮罩構件之2個遮罩構件定位成面對被蒸著 物，所以不利於生產效率方面，發生不良品之危險性變高 〇 【發明內容】 本發明之目的是提供有機電場發光裝置之製造方法， 以遮罩構件之撓屈不會影響到發光像素部之方式，形成發 光層，在發光區域全面具有高精細度。 爲了解決上述問題，本發明具有下面所述之構造。亦 即，其主旨是： (A) —種蒸著遮罩，使用在有機電場發光裝置之發光 層之蒸著，其特徵是該遮罩具備有遮罩構件，具有用以形 成發光像素用之發光層之開口（以下稱爲有效開口）和在被 該有效開口群之外緣區畫之區域（以下稱爲有效開口區域） ，未被使用作爲發光像素形成用之開口（以下稱爲虛擬開口） 〇 (B) —種有機電場發光裝置之製造方法，用來製造具 有2色以上之發光像素之有機電場發光裝置，其特徵是所 包含之步驟有：對於至少1色之像素，使該（A)項或其改良 1358240 之蒸著遮罩，接觸被蒸著材料或被配置在其近傍，經由該 遮罩蒸著發光性有機化合物，用來形成發光層。 (C)—種有機電場發光裝置，在第1電極和第2電極 之間包含有由有機化合物構成之發光層，包夾薄膜層之2 色以上之發光像素以指定之間距排列在基板上，其特徵是 :該發光層具有條帶狀圖案，和發光像素在一方向排列各 色交替之圖案，在其正交之方向排列同一色，和在排列有 該發光像素之區域（以下稱爲發光區域）之外，由與該發光 層形成用之有機化合物相同之有機化合物形成，不供作發 光像素之圖案形成有1個以上。 故，依本發明能夠形成橫跨全區域的高精細之發光層 圖案，因而可得到顯示品質良好的有機電場發光裝置。 【實施方式】 本發明之有機電場發光裝置是以指定之間距排列2色 以上之發光像素之有機電場發光裝置，可以成爲單純矩陣 型或動態矩陣型，不限定顯示形成。特別是在紅、綠、藍 色區域，存在具有各種發光尖峰波長之發光像素稱爲全彩 色顯示器，通常之範圍是紅色區域之光之尖峰波長爲560 〜700nm、綠色區域爲 500〜560nm、藍色區域爲 420〜 5 0 Onm 〇 被稱爲發光像素之範圍是利用通電發光之部分。亦即 ，被配置互相面對之第1和第2電極在厚度方向看時，共 同存在之部分，另外，當在第1電極上形成有絕緣層之情 況時，被其限制之範圍。在單純矩陣型顯示器中，第1電 極和第2電極形成條帶狀，交叉部分被使用作爲發光像素 ’所以發光像素大多形成矩形狀。在動態矩陣型顯示器， 1358240 將開關手段形成在發光像素之近傍，在此種情況，發光像 素之形狀不是矩形狀’大多成爲一部分欠缺之矩形狀。但 是’在本發明中，發光像素之形狀並不只限於此種方式， 例如亦可以成爲圓形，或用以控制絕緣層之形狀之任意之 形狀。 本發明之有機電場發光裝置利用遮罩蒸著法形成發光 層》遮罩蒸著法如第5圖所示，使蒸著遮罩接觸在被蒸著 物’或配置在其近傍，藉以對發光性之有機化合物進行圖 案製作’將具有所希望之圖案之開口之蒸著遮罩，配置在 基板之蒸著源側，進行蒸著。要獲得高精度之蒸著圖案時 ’使高平坦性之蒸著遮罩密著在基板非常重要，可以利用 對遮罩構件施加張力之技術，或被配置在基板背面之磁鐵 ，使蒸著遮罩密著在基板之方法等。 、 下面說明本發明之製造方法所使用之發光層用之蒸著 遮罩。因爲發光層圖案要求高精確度，所以本發明所使用 之蒸著遮罩亦必然需要高精確度，遮罩構件之製造方法可 以使用蝕刻法或機械硏磨法、噴砂法、燒結法、雷射加工 法、感光性樹脂之利用等，但是大多使用微細圖案加工精 確度優良之蝕刻法或電鑄法。遮罩構件之厚度最好爲 1 ΟΟμπι 以下。 本發明之製造方法所使用之蒸著遮罩之遮罩構件之特 徵是在構成發光像素用之有效開口，和在被該有效開口群 之外緣區畫之有效開口區域之周圍’具有發光像素形成用 之未被使用之虛擬開□(第S圖）。另外’利用本發明之製 1358240 造方法之有機電場發光裝置之一態樣是在發光區域之周緣 部，利用與該發光層所使用之有機化合物相同之有機化合 物，形成不發光之圖案。使用具備有此種遮罩構件之蒸著 遮罩，由於遮罩構件內之應力差等所造成之撓屈，因爲不 會影響到存在於虛擬開口之內側之有效開口區域，所有有 效開口區域可以以良好之精確度密著在被蒸著材料，可以 形成高精細度之發光層之圖案。 -換言之，有效開口區域是指接合在存在於最外側之有 效開口，而且由包含其之最短長度之閉合線所區畫之區域 0 另外，充分地獲得本發明之效果之較佳方法是最好將 虛擬開口配置在有效開口區域之周圍，使開口區域（包含有 效開口和虛擬開口）之最外周部具有1 0mm以上之直線部分 (參照第9圖）。利用此種方式可以有效的分散局部之撓屈 〇 虛擬開口之個數，形狀和大小並沒有特別之限定。對 於個數只要1個以上即可，但是較好是在有效開口區域之 上下左右各有1個以上，更好是各3個以上。至於形狀可 以爲矩形亦可以爲圓形。另外，至於大小可以大於亦可以 小於有效開口。該虛擬開口之形成，可以加工成爲獨自之 形狀，但是爲著使遮罩構件之製作變爲容易，最好設置成 與有效開口之圖案同調的排列，假如有效開口之指定之間 距是在縱方向排列m個，在橫方向排列n個時，開口全體 在縱方向排列m + 1個以上，和/或在橫方向排列n + 1個以上 1358240 ’亦即，最好利用m χ η個之開口以外之部分之虛擬開口。 在本發明，亦可以使用多個遮罩構件，其中之一個之 遮罩構件可以是具有上述之虛擬開口之遮罩構件。在使用 遮罩構·件之情況，各個遮罩構件可以互相離開，亦可以互 相接觸。 遮罩構件爲著操作之簡便，通常固定在被施加張力之 框架，但是亦可以直接使用遮罩構件作爲蒸著遮罩。在使 用框架之情況時，其形狀並沒有特別之限定，可以考慮使 用各種態樣。 _ 下面，依照附圖用來說明具體之實例。如第6圖所示， 在被固定到框架之餘裕部以外之部分（以下將該部分稱爲 蒸著遮罩活用區域）之大致全面，形成以所希望之發光像素 之圖案開口之遮罩構件（上部遮罩構件）和具有大於發光區 域之開口之遮罩構件（下部遮罩構件），經由使該等重疊， 在上部之遮罩構件形成未被下部遮罩構件遮罩之有效開口 和被下部遮罩構件遮蔽之虛擬開口，可以用來獲得本發明 之蒸著遮罩。這時，虛擬開口之一部分或全部，被下部遮 ® 罩構件部分的或完全的覆蓋。在此種構造中，不需要使2 片之遮罩構件貼合，可以只重疊或非接觸。另外，依照該 等方法時，因爲上部遮罩構件具有全面均一之開口部，所 以不容易產生面內應力差或畸變等，貼著到框架之精確度 以及利用蒸著之圖案製作之精確度可以提高。另外，發光 層之蒸著之進行是將上部遮罩側設在被蒸著構件側，最好 使上部遮罩接合在被蒸著構件。 -12- 1358240 此處之下部遮罩構件理想的是使其開口之一個緣部在 被上部遮罩構件之虛擬開口包圍之區域之外側，而且在離 開有效開口區域之外緣爲500μηι之距離所包圍之區域之內 側。利用此種構造，在未形成有虛擬開口之圖案，或存在 於有效開口區域之外側之稍微之部分（該圖案在作爲有機 電場發光裝置時，最好形成在離開發光區域之外緣爲 5〇0μιη 或戔力口1；^胃胃塵—之選@ ’ ^0 成爲布線等之接著不良之原因，可以成爲良好之後加工效 率。另外，可減小或消除由於下部構件之厚度之原因所產 生之陰影。 換言之，被虛擬開口包圍之區域是接合鄰接有效開口 區域之虛擬開口，和未包含其之最短長度之閉合線所區畫 之區域。（但是，當在有效開口區域之角部未存在有虛擬開 口之情況時，最接近該角部之虛擬開口對有效開口區域保 持同距離，存在於該角部）。 另外，使用該等方法時，如第7圖、第11圖所示，與 多倒角對應之蒸著遮罩之製作亦變爲容易。另外，如第12 圖所示，使遮罩構件和框架組合之情況時，遮罩構件亦可 以不必固定在框架之十字框之部分。 ^ 在第6圖、第7圖之實例中’因爲使兩方之遮罩構件 重疊，所以亦可以固定在框架，但是爲著進行更高精確度 之圖案製作，最好將與基板面對之形成有微細圖案之上部 遮罩構件固定在框架上面，將用以規定蒸著區域之下部遮 罩構件固定在框架之內側，成爲不會對上部遮罩構件施加 -13- 1358240 不必要之力。 另外，在利用框架部分的或完全的覆蓋虛擬開口之部 分或全部之情況時，最好利用與上述利用下部遮罩構件覆 蓋在虛擬開口時同樣之方式進行設計。 要獲得良好之圖案精確度時，作爲遮罩構件者使用蒸 著遮罩活用區域之90 %以上之區域，較好爲95 %以上之區 域，使用具有有效開口和虛擬開口者。另外，有效開口之 平均面積（有效開口全體之面積/虛擬開口之個數）和虛擬開 口之平均面積（虛擬開口全體之面積/虛擬開口之個數）之比 率（以下稱爲開口率），較好是在50〜200°/。之範圍內，更好 是80〜125 %。在蒸著遮罩活用區域儘可能設置大的開口， 和使開口率接近1 00%，藉以易於計算當對遮罩構件施加張 力時之伸縮度，可以提高形狀之保持性，對框架之固定精 確度，和圖案製作精確度。 在第6圖、第7圖所示之蒸著遮罩之實例之情況時， 虛擬開口之一部分被另外之遮罩構件（下部遮罩構件）覆蓋 和隱蔽。下部遮罩構件有利於只限於發光區域，不需要像 素位準之位置精確度者。亦即，在虛擬開口之一部分被覆 蓋和隱蔽，一部分未被隱蔽之情況時，因爲經由該虛擬開 口之圖案不構成發光像素，所以不會產生問題。 下面說明有機電場發光裝置之製造方法之具體例，但 是本發明並不只限於該具體例。 在形成有氧化錫銦（ITO)等之透明電極膜之透明基板 ’使用光刻法進行圖案製作，形成多個條帶狀第I電極被 1358240 配置成具有一定之間隔。 本發明之有機電場發光裝置亦可具有絕緣層，形成覆 竟在第一電極之一部分。絕緣層之材料可以使用各種之無 機系和有機系材料，無機系材料可以使用氧化矽爲首之氧 化猛、氧化細、氧化鈦、氧化鉻等之氧化物材料、矽、砷 化鉀、等之半導體材料 '玻璃材料、陶瓷材料等，有機系 材料可以使用聚乙烯系 '聚醯亞胺系、聚苯乙烯系、漆用 酣醒系、砂系等之聚合物材料等。絕緣層之形成時，可以 使用已知之各種形成方法。 修 本發明之有機電場發光裝置之發光像素是使包含有由 有機化合物構成之發光層之薄膜層，被第〖電極和第2電 極包夾。該薄膜層之構造是只要包含有發光層並沒有特別 之限定’例如可以使（1)電洞輸送層/發光層' (2)電洞輸送 層/發光層/電子輸送層' (3)發光層/電子輸送層、和（4)上述 構造之各層之一部分或全部所使用之材料，成爲混合成一 層之態樣之任一種。 . 其中至少需要對發光層進行圖案製作。在全彩色顯示 ® 器之情況時，在紅（R)、綠（G)、藍（B)3色之區域，使用與 具有發光尖峰波長之3個發光色對應之發光材料，順序的 形成3種之發光層。在本發明中，發光層形成條帶狀之圖 案，但是此處之條帶狀，除了使條帶之各個元件形成連續 之直線外，亦包含使斷續之圖案排列在一直線上之態樣。 斷續之圖案可以獲得位置精確度和密著性良好之精細之圖 案。在此種情況，最好之態樣是使發光層之圖案之間距被 -15- 1358240 排列成與像素之間距相同或爲其整數倍。 ‘ 在該薄膜層之形成後，形成第2電極。在單純矩陣方 式中，在薄膜層上圖案製作多個條帶狀之第2電極，配置 成與第1電極交叉’和具有一定之間隔。另外一方面，在 作用矩陣方式中，大多形成涵蓋發光區域全體之第2電極 。在第2電極因爲要求得具有作爲能夠有效植入電子之陰 極之功能’所以大多使用考慮到電極之穩定性之金屬材料 〇 在第2電極之圖案製作之後，進行密封，連接驅動電鲁 路用來獲得有機電場發光裝置。另外，第1電極爲不透明 之電極’第2電極爲透明，可以從像素上面將光取出。另 外，亦可以使第1電極成爲陰極，第2電極成爲陽極。 另外’在1片之基板上進行η基部分（η爲2以上之整 數）之加工’假如使用將該基板切斷成爲η個之步驟時，因 爲可以提高生產效率，所以有利於大量生產時之製造成本 之降低。 本發明之有機電場發光裝置因爲可以進行高精細度之 ® 發光層之圖案製作’所以使各色之發光像素各一個之組合 成爲一個單位，可以使像素集合之間距在縱橫均爲5 〇 〇 μηι 以下，更好爲400μιη以下。 實施例 下面，以實施例和比較例用來說明本發明，但是本發 明並不只限於該等之實例。 1358240 實施例1 在厚度1.1 mm之無鹼玻璃表面，利用濺散法，形成厚 度130nm之ITO透明電極膜，將玻璃基板切斷成爲120x 10 0mm之大小。在ITO基板上塗布光抗蝕劑，利用通常之 光刻法之曝光，顯像進行圖案製作。在利用蝕刻除去IT 0 之不要部分之後，除去光抗蝕劑，將ITO膜圖案製作成爲 長度90mm，幅度80μιη之條帶狀。以ΙΟΟμηι之間距配置 816根之該條帶狀第1電極。 其次，利用自轉塗膜法，在形成有第1電極之基板上 ，塗布正型光抗蝕劑（東京應化工業（股）製，OFPR- 8 00)成 爲厚度3μπι。經由光罩對該塗布膜進行圖案曝光，進行顯 像之光抗蝕劑之圖案製作，在顯像後以1 8 0 °C熟化。利用 此種方式，除去絕緣層之不要部分，在條帶狀之第1電極 上形成縱向23 5 μηι、橫向70μιη之絕緣層開口部，在縱方向 3 ΟΟμηι間距形成200個，在橫方向以100 μηι間距形成816 個。絕緣層之邊緣部分之剖面成爲順倒角形狀。形成有絕 緣層之基板，在80°C，1 OPa之減壓環境氣體下，放置20 分鐘進行脫水處理。 · 包含發光層之薄膜層利用電阻線加熱方式之真空蒸著 法形成。另外，蒸著時之真空度爲2x1 0_4 Pa以下，在蒸著 中使基板對蒸著源進行相對旋轉。首先，使銅酞菁成爲 15nm’雙（N-乙基咔唑）成爲60nm，在發光區域全面進行蒸 著，藉以形成電洞輸送層。 發光層用蒸著遮罩使用具有開口部之排列開口區域之 1358240 蒸著遮罩。遮罩構件之外形是1 2 0x84mm、厚度是25 μιη ' 縱向61.77111111、橫向10(^111之開口部具有在橫方向以30(^111 之間距排列278根之開口區域。在各個開口部以300μπι之 間距設置205根之幅度3 Ομιη之補強線。亦即被補強線區 畫之開口部之數目在縱方向爲206個，其中有效開口部爲 2 00個，被補強線區畫之開口部一個之大小爲縱向2 70μηι 、橫向ΙΟΟμιη。遮罩構件被固定在外形與其相等之幅度4mm 之不銹鋼製之框架。 將發光層用蒸著遮罩配置在基板前方使兩者密著，在 基板後方配置肥粒鐵系板磁鐵（日立金屬公司製，YBM-1B) 。這時，絕緣層開口部被配置成與蒸著遮罩之有效開口部 重疊之方式，另外，虛擬開口部被定位成在發光區域之上 下左右各3個。蒸著遮罩接觸在膜厚較厚之絕緣層，因爲 不與先前形成之電洞輸送層接觸，所以可以防止遮罩受傷 〇 在此種狀態，蒸著21nm之摻雜有0.3重量％之1,3,5,7, 8-五甲基-4,4-二根皮-4-硼3a，4a-二氮-S·印達西（PM546)之 8-羥基喹啉鋁錯體（Alq3)，圖案製作成綠色發光層。· .其次，使蒸著遮罩向右偏移1個間距部分，蒸著I5nm 之摻雜有1重量％之4-(二氰甲醇）-2-甲基-6-(二甲基二苯 乙烯）吡喃（DCJT)之Alq3，圖案製作成紅色發光層。 然後，使蒸著遮罩向左偏移2個間距部分，蒸著20nm 之4,4'·雙（2,2·-二苯基乙烯基）二苯基（DPVBi)，圖案製作成 藍色發光層。綠色、紅色、藍色之各個之發光層被配置在 -18- 1358240 條帶狀第1電極之3個，成爲完成覆蓋在第1電極之露出 部分。另外’在該像素之構造中，未被使用之發光層用有 機化合物之區域同時被配置成上下各3個，左右各9個。 其次，在發光區域全面蒸著35nm之DPVBi、10nm之 Alq3。然後，使薄膜層曝露在鋰蒸氣，進行摻雜（膜厚換算 量 0.5 n m ) 〇 第2電極圖案製作用之蒸著遮罩之構造在遮罩構件之 與基板接合之面和補強線之間存在有間隙。遮罩構件之外 形爲120x84mm、厚度爲ΙΟΟμηι，以間距300μηι配置200 根之長度100mm，幅度250 μπι之條帶狀開口部。在遮罩構 件之上形成網目狀之補強線，由幅度40μιη、厚度35μηι， 面對之二邊之間隔爲200μηι之正六角形構造構成。間隙之 高度與遮罩構件之厚度相等，成爲100 μπι。遮罩構件被固 定在外形與其相等之幅度4mm之不銹鋼製之框架。 第2電極利用電阻線加熱方式之真空蒸著法形成。另 外，蒸著時之真空度爲3xl(T4Pa以下，在蒸著中基板對2 個蒸著源進行相對旋轉。與發光層之圖案製作同樣的，將 第2電極用蒸著遮罩配置在基板前方，使兩者密著，將磁 鐵配置在基板後方。這時將兩者配置成使絕緣層開口部和 蒸著遮罩之有效開口部重疊。在此種狀態蒸著厚度2 OOnm 之鋁，對第2電極進行圖案製作。第2電極被配置成與第 1電極正交，圖案製作成條帶狀。 從蒸著機取出本基板，在利用旋轉泵形成之減壓環境 氣體下，保持20分鐘後，轉移到露點爲-90°C以下之氬環 -19- 1358240 境氣體中。在該低濕環境氣體下，使用硬化性環氧樹脂貼 合基板和密封用玻璃板，將其密封。 依照此種方式，在幅度爲80μιη、間距爲ΙΟΟμιη、根數 爲816根之ΙΤΟ條帶狀第〗電極上，形成被圖案製作之綠 色發光層、紅色發光層和藍色發光層，用來製作單純矩陣 型彩色有機電場發光裝置，以與第1電極正交之方式配置 2〇〇根之幅度爲250 μπι、間距爲300 μπι之條帶狀第2電極 。因爲形成紅、綠、藍各1個，亦即合計3個之發光像素 成爲1個之像素集合，所以本發光裝置具有間距爲300μιη 之272x200個之像素集合。 線順序驅動本有機電場發光裝置，可以獲得良好之顯 示特性。另外，利用顯微鏡觀察發光像素，可以確認沒有 對鄰接像素之混色等，在涵蓋發光區域全面可以形成良好 之發光層圖案。 實施例2 使發光層用蒸著遮罩之有效開口部在縱向爲200個、 橫向爲272個，如第10圖所示，涵蓋有效開口區域之周圍 3mm之直徑200μιη之圓狀虛擬開□，以400μιη間距排列， 除此之外’與實施例1同樣的製作有機零場發光裝置。 以線順序驅動有機電場發光裝置時，可以獲很良好之 顯示特性。另外，利用顯微鏡觀察發光像素，可以確認沒 有對鄰接像素之混色等，在涵蓋發光區域全面可以形成良 好之發光層圖案》 -20- 1358240 實施例3 利用濺散法在厚度1.1mm之無鹼玻璃表面，形成厚度 130nm之ITO透明電極膜，將玻璃基板切斷成爲120x100mm 之大小。在ITO基板上塗布光抗蝕劑，利用通常之光刻法 之曝光，顯像進行圖案製作。在利用蝕刻除去IT 0之不要 部分之後，除去光抗蝕劑，將IT 0膜圖案製作爲成長度 90mm、幅度160μηι之條帶形狀。以200μηι之間距配置408 根之該條帶狀第1電極。 其次，利用自轉塗膜法，在形成有第1電極之基板上 ，塗布正型光抗蝕劑（東京應化工業（股）製，OFPR-800)成 爲厚度3μιη。經由光罩對該塗布膜進行圖案曝光，進行顯 像之光抗蝕劑之圖案製作，在顯像後以1 8 0 °熟化。利用此 種方式，除去絕緣層之不要部分，在條帶形狀之第1電極 上形成縱向47 0 μηι、橫向140μιη之絕緣層開口部，在縱方 向以600μιη間距形成1 00個，在橫方向以200μιη間距形成 4 0 8個。絕緣層之邊緣部分之剖面成爲順倒角形狀。形成 有絕緣層之基板，在80°C、lOPa之減壓環境氣體下，放置 20分鐘進行脫水處理。 包含發光層之薄膜層利用電阻線加熱方式之真空蒸著 法形成。蒸著時之真空度爲2xl(T4Pa以下，在蒸著中使基 板對蒸著源進行相對旋轉。首先，使銅酞菁成爲15 nm、雙 -(N-乙基咔唑）成爲60nm，在發光區域全面進行蒸著，藉以 形成電洞輸送層。 發光層用蒸著遮罩使用排列有開口部之開口區域之蒸 -2 ]- 1358240 著遮罩。遮罩構件之外形是1 2 0x 8 4mm、厚度是25μηι、縱 向63.54mm、橫向200μϊη之開口部具有在橫方向以600μηι 間距排列1 42根之開口區域。在各個開口部以600 μπι間距 設置105根之幅度60 μιη之補強線。亦即，被補強線區畫 之開口部之數目在縱方向爲106個，其中有效開口部爲100 個，被補強線區畫之開口部一個之大小爲縱向540μιη、橫 向2 00 μηι。遮罩構件被固定在外形與其相等之幅度4mm之 不銹鋼製之框架。 將發光層用蒸著遮罩配置在基板前方使兩者密著，在 基板後方配置肥粒鐵系板磁鐵（日立金屬公司製，YBM-1B) 。這時，絕緣層開口部被配置成爲與蒸著遮罩之有效開口 部重疊之方式，另外，虚擬開口部被定位成在發光區域之 上下左右各3個。蒸著遮罩接觸在膜厚較厚之絕緣層，因 爲不與先前形成之電洞輸送層接觸，所以可以防止遮罩受 傷。 在此種狀態，蒸著21nm之摻雜有0.3重量％之1，3,5, 7,8-五甲基-4,4-二根皮-4-硼3&，4&-二氮-8-印達西（？1^546) 之8-羥基喹啉鋁錯體（Alq3)，圖案製作成綠色發光層。 其次，使蒸著遮罩向右偏移1個間距部分，蒸著15nm 之摻雜有1重量％之4·(二氰甲醇）-2 -甲基-6-(二甲基二苯 乙烯）吡喃（DCJT)之Alq3 ’圖案製作成紅色發光層。 然後，使蒸著遮罩向左偏移2個間距部分，蒸著20nm 之4,4'-雙（2,2’ -二苯基乙烯基）二苯基（DPVBi)，圖案製作成 藍色發光層。綠色、紅色、藍色之各個發光層被配置在條 -22- J35B240 帶狀第1電極之3個’成爲完全覆蓋在第1電極之露出部 分。另外，在該像素之構造中，未被使用之發光層用有機 化合物之區域同時被配置成上下各3個’左右各9個° 其次，在發光區域全面蒸著35nm之DPVBi、10nm之 A 1 q3。然後，使薄膜層曝露在鋰蒸氣’進行摻雜（膜厚換算 量 0.5 n m)。 第2電極圖案製作用之蒸著遮罩之構造在遮罩構件之 與基板接合之面和補強線之間存在有間隙。遮罩構件之外 形爲120x84mm、厚度爲100 μπι，以間距600 μιη配置100 根之長度l〇〇mm，幅度500μπι之條帶狀開口部。在遮罩構 件之上形成網目狀之補強線，由幅度40μηι、厚度35μιη， 面對之二邊之間隔爲200μιη之正六角形構造構成。間隙之 高度與遮罩構件之厚度相等，成爲ΙΟΟμιη。遮罩構件被固 定在外形與其相等之幅度4mm之不銹鋼製之框架。 第2電極利用電阻線加熱方式之真空蒸著法形成。另 •外，蒸著時之真空度爲3xl(T4Pa以下，在蒸著中基板對2 個蒸著源進行相對旋轉。與發光層之圖案製作同樣的，將 第2電極用蒸著遮罩配置在基板前方，使兩者密著，將磁 鐵配置在基板後方。這時將兩者配置成使絕緣層開口部和 蒸著遮罩之有效開口部重疊。在此種狀態蒸著厚度2 0 Onm 之鋁，對第2電極進行圖案製作。第2電極被配置成與第 1電極正交，圖案製作成條帶狀。 從蒸著機取出本基板，在利用旋轉泵基板之減壓環境 氣體下’保持20分鐘後’轉移到露點爲-90。(：以下之氬環 -23- 1358240 境氣體中。在該低濕環境氣體下，使用硬化性環氧樹脂貼 合基板和密封用玻璃板，將其密封。 依照此種方式，在幅度爲160μηι、間距爲200μπι、根 數爲408根之條帶狀第1電極上，形成被圖案製作之綠色 發光層、紅色發光層和藍色發光層，用來製作單純矩陣型 彩色有機電場發光裝置，以與第1電極正交之方式配置100 根之幅度爲500 μηι、間距爲600 μπι之條帶狀第2電極。因 爲形成紅.、綠、藍各1個，亦即合計3個之發光像素成爲 1個之像素集合，所以本發光裝置具有間距爲600μηι之1 36 xlOO個之像素集合。 線順序驅動本有機電場發光裝置，可以獲得良好之顯 示特性。另外，利用顯微鏡觀察發光像素時，在發光區域 之外周部確認發光像素之邊緣部分有模糊。不利於基板和 蒸著遮罩之密著，但是不致於發生混色。. 實施例4 利用濺散法在外形500x400mm，厚度0.7mm之無鹼玻 璃表面’形成厚度1 30nm之ITO透明電極膜，在ITO基板 上塗布光抗蝕劑，利用通常之光刻法之曝光，顯像進行圖 案製作。在利用蝕刻除去ITO之不要部分之後，除去光抗 蝕劑，將ITO膜圖案製作爲成長度90mm、幅度8〇μηι之條 帶形狀圖案。以1 00 μηι之間距配置8 1 6根之該條帶狀第1 電極’使對角4吋之發光區域形成16面，將玻璃分割成爲 4個之200x2l4mm之大小，用來製成4倒角之ΙΤΟ基板。 其次’利用自轉塗膜法，在形成有第1電極之基板上 -24- 1358240 ’塗布正型光抗蝕劑（東京應化工業（股）製，OFPR-800)成 爲厚度2μιη。然後，以1 20°C進行假硬化，經由光碟進行 圖案曝光。然後，進行顯像之光抗蝕劑之圖案製作，在顯 像後以23 0 °C進行熟化。利用此種方式，除去絕緣層之不 要部分，在條帶形狀之第1電極上形成縱向23 5 μιη、橫向 7〇μιη之絕緣層開口部，在縱向以300μηι間距形成200個， 在橫向以1 0 Ομηι間距形成8 1 6個。絕緣層之邊緣部分之剖 面成爲順倒角形狀。形成有絕緣層之基板，在8〇t、l〇Pa 之環境氣體下，放置20分鐘進行脫水處理。 包含發光層之薄膜層利用電阻線加熱方式之真空蒸著 法形成。另外，蒸著時之真空度爲2x1 (T4Pa以下，在蒸著 中使基板對蒸著源進行相對旋轉。首先，使銅酞菁成爲 1 5nm、雙-(N-乙基咔唑）成爲60nm，在發光區域全面進行 蒸著，藉以形成電洞輸送層。 發光層用蒸著遮罩使用具有4個之排列有開口部之開 口區域之蒸著遮罩。遮罩構件之外形是200x214mm、厚度 是25μιη、縱向6I.77mm、橫向ΙΟΟμπι之開口部具有4個在 橫方向以3 0 0μηι間距排列2 7 8根之開口區域，被配置在與 先前製作之4個倒角ΙΤΟ基板之ΙΤΟ圖案對應之位置。在 各個開口部設置有幅度30 Ομηι之補強線，以3 00 μηι間距設 置205根。亦即，被補強線區畫之1個開口區域之開口部 之數目在縱方向爲206個，其中有效開口部爲200個，被 補強線區畫之開口部1個之大小爲縱向270μηι、橫向ΙΟΟμπι 。遮罩構件具有163x2〇〗mm之開口，被固定在超低膨脹鋼 -25- 1358240 製之框架，蒸著遮罩區域成爲1 63x20 1 mm。 將發光層用蒸著遮罩配置在基板前方使兩者密著，在 基板後方配置肥粒鐵系板磁鐵（日立金屬公司製，YBM-1B) 。這時，絕緣層開口部被配置成爲與蒸著遮罩之有效開口 部重疊之方式，另外，虛擬開口部被定位成在發光區域之 上下左右各3個。蒸著遮罩接觸在膜厚較厚之絕緣層，因 爲不與先前形成之電洞輸送層接觸，所以可以防止遮罩受 傷。 在此種狀態，蒸著21nm之摻雜有0.3重量％之1，3,5, 7,8-五甲基-4,4-二根皮-4-硼3&，43-二氮-3-印達西（？1^546) 之8-羥基喹啉鋁錯體（Alq3)，圖案製作成綠色發光層。 其次，使蒸著遮罩向右偏移1個間距部分，蒸著15nm 之摻雜有1重量％之4-(二氰甲醇）-2 -甲基-6-(二甲基二苯 乙烯）吡喃（DCJT)之Alq3，圖案製作成紅色發光層》 然後’使蒸著遮罩向左偏移2個間距部分，蒸著20nm 之4,4|-雙（2,2'-二苯基乙烯基）二苯基（01^8丨），圖案製作成 藍色發光層。綠色、紅色、藍色之各個發光層被配置在條 帶狀第1電極之3個’成爲完全覆蓋在第1電極之露出部 分。另外，在該像素之構造中，未被使用之發光層用有機 化合物之區域同時被配置成上下各3個，左右各9個。 其次，在發光區域全面蒸著35nm之DPVBi、10nm之[Technical Field] The present invention relates to an organic electric field light-emitting device including a light-emitting layer composed of an organic compound formed by a mask evaporation method, and having a pattern of pixels formed thereon, and a method of manufacturing the same. [Prior Art] The organic electric field light-emitting device is a hole that is implanted from the anode, and the electrons implanted from the cathode are recombined by the organic light-emitting layer 6 sandwiched by the two electrodes to emit light. As shown in Fig. 2, the representative structure includes a first electrode 2 formed on the substrate 1, a thin film layer including the light-emitting layer 5 composed of at least an organic compound, and a second electrode 6 which is driven by driving. The light emission 'is taken out from the side of the transparent electrode to the outside. In such an organic electric field light-emitting device, it is possible to use a light-emitting device, a display, or the like by performing high-intensity light emission under low-voltage driving and multi-color light emission through an organic compound that selects a light-emitting layer. In the manufacture of an organic electric field light-emitting device, it is necessary to pattern a light-emitting layer or the like, and the production method thereof has been subjected to various reviews. In the case where a fine pattern is required to be produced, a representative method is to use photolithography. In the formation of the first electrode of the organic electric field light-emitting device, photolithography can be used. However, when the light-emitting layer and the second electrode are formed, the photolithography method is basically a wet process, so that it is difficult to apply it. Therefore, in the formation of the light-emitting layer or the second electrode, dry treatment such as vacuum evaporation, sputtering, or chemical vapor deposition (CVD) can be used. The means for patterning the film by such a treatment is often carried out by a mask evaporation method using a steaming mask. 1358240 The pattern of the luminescent layer of an organic electric field illuminating device used as a display is quite high. In the simple matrix method, the light-emitting layer is formed on the first electrode patterned into a strip shape, but the line width of the first electrode is usually about 1 ΟΟμηι or less, and the pitch is 丨〇〇μηη degree β, and the second The electrodes are also formed at a pitch of several hundred μπ1 in a form intersecting the first electrode, and the elongated electrodes have a low resistance in the longitudinal direction, and the electrodes adjacent in the amplitude direction need to be completely insulated. In the dynamic matrix mode, the luminescent layer also needs to be patterned with equal or greater fineness. Therefore, the vaporized mask used for the patterning of the light-emitting layer necessarily requires high definition. The method of manufacturing the mask member may be an etching method, a mechanical honing method, a sand blast method, a sintering method, a laser processing method, or a use of a photosensitive resin, but an etching method or an electroforming method which is excellent in precision in processing fine patterns is often used. . Further, when the mask member becomes thick, shadows are generated due to the evaporation angle, and the pattern is blurred. Therefore, the higher the requirement for fineness, the thinner the thickness of the mask member is. The thickness of the mask member for the light-emitting layer is usually ΙΟΟμηι or less, and is generally fixed and held in the frame of the window frame for use in steaming. In the mask member of the vaporized mask used for forming the light-emitting layer, there is an opening region 9 which is drawn by the outer edge region of the opening 1 and is configured to form a pattern with the mask region 7 on the base material. (Figure 3). At this time, depending on the manufacturing conditions of the mask, a stress difference occurs between the mask region and the opening region, and there is a problem that the boundary portion (the dotted line portion of Fig. 3(a)) is locally bent. When such a vaporized mask is used, the flexing of the portion of the mask where the flexing occurs and the portion of the 1358240 mask member are applied. In addition, the steamed mask for chamfering is a vaporized mask formed by overlapping a strip-shaped first mask member and a second mask member for restricting the evaporation range (for example, reference) Japanese Patent No. 2 00 3 -6 8 4 5 4), but the problem of the problem solved by the present invention is not achieved, and the local flexing of the mask member does not affect the light-emitting region. In addition, since it is necessary to position the two mask members of the strip-shaped mask member and the second mask member so as to face the vaporized object, the risk of occurrence of defective products becomes high due to the production efficiency. SUMMARY OF THE INVENTION An object of the present invention is to provide a method for fabricating an organic electric field light-emitting device, which has a high-definition property in a light-emitting region in such a manner that a flexural deflection of a mask member does not affect a luminescent pixel portion. In order to solve the above problems, the present invention has the configuration described below. That is, the main idea is: (A) a vaporized mask, which is used for evaporation of a light-emitting layer of an organic electric field light-emitting device, characterized in that the mask is provided with a mask member for forming a light-emitting pixel. The opening of the light-emitting layer (hereinafter referred to as an effective opening) and the region drawn by the outer edge region of the effective opening group (hereinafter referred to as an effective opening region) are not used as openings for forming a luminescent pixel (hereinafter referred to as a virtual opening) 〇(B) - A method of manufacturing an organic electric field illuminating device for manufacturing an organic electric field illuminating device having illuminating pixels of two or more colors, characterized in that the step of including: for at least one color of pixels, The vapor mask of item A) or its improvement 1358240 contacts the vaporized material or is placed in the vicinity thereof, and the luminescent organic compound is vaporized through the mask to form a light-emitting layer. (C) an organic electric field light-emitting device comprising: a light-emitting layer made of an organic compound between the first electrode and the second electrode; and two or more light-emitting pixels of the film-bonding layer are arranged on the substrate at a predetermined interval; The illuminating layer has a stripe pattern, and the illuminating pixels are arranged in an alternating pattern of colors in one direction, and the same color is arranged in the direction orthogonal thereto, and an area in which the illuminating pixels are arranged (hereinafter referred to as a illuminating area) In addition, it is formed of the same organic compound as the organic compound for forming the light-emitting layer, and one or more patterns are not formed as the light-emitting pixels. Therefore, according to the present invention, it is possible to form a high-definition light-emitting layer pattern across the entire region, and thus an organic electric field light-emitting device having good display quality can be obtained. [Embodiment] The organic electroluminescence device of the present invention is an organic electric field light-emitting device in which two or more color pixels are arranged at a predetermined interval, and can be a simple matrix type or a dynamic matrix type, and is not limited to display formation. Especially in the red, green and blue regions, there are illuminating pixels with various illuminating spike wavelengths, which are called full-color displays. Generally, the range of light in the red region is 560 to 700 nm, and the green region is 500 to 560 nm. The color area is 420 to 50. Onm 〇 is called the range of illuminating pixels. In other words, when the first and second electrodes which are disposed to face each other are formed in the thickness direction, they are present in common, and when the insulating layer is formed on the first electrode, the range is limited. In the simple matrix display, the first electrode and the second electrode are formed in a strip shape, and the intersecting portion is used as the luminescent pixel. Therefore, the illuminating pixels are often formed in a rectangular shape. In the dynamic matrix display, 1358240, the switching means is formed in the vicinity of the luminescent pixel. In this case, the shape of the luminescent pixel is not rectangular, and most of them are partially rectangular. However, in the present invention, the shape of the luminescent pixel is not limited to this, and may be, for example, a circular shape or an arbitrary shape for controlling the shape of the insulating layer. The organic electric field light-emitting device of the present invention forms a light-emitting layer by a mask evaporation method. The mask evaporation method is as shown in Fig. 5, and the vaporized mask is brought into contact with the vaporized object or disposed in the vicinity thereof, whereby the light is emitted. The organic compound is patterned to form an evaporation mask having an opening of a desired pattern, and is placed on the vapor source side of the substrate to be vaporized. In order to obtain a high-precision steaming pattern, it is very important to make the vapor mask of high flatness adhere to the substrate, and it is possible to use a technique of applying tension to the mask member or a magnet disposed on the back surface of the substrate to shield the vapor. A method in which a cover is adhered to a substrate. Next, an evaporation mask for a light-emitting layer used in the production method of the present invention will be described. Since the luminescent layer pattern requires high precision, the vapor mask used in the present invention necessarily requires high precision. The mask member can be manufactured by etching or mechanical honing, sand blasting, sintering, or laser. The processing method, the use of a photosensitive resin, etc., but an etching method or an electroforming method which is excellent in precision of fine pattern processing is often used. The thickness of the mask member is preferably 1 ΟΟμπι or less. The mask member of the vapor mask used in the manufacturing method of the present invention is characterized in that it has an effective opening for illuminating pixels, and has luminescent pixels around the effective opening region drawn by the outer edge region of the effective opening group. Form a virtual opening that is not used (S diagram). Further, an aspect of the organic electroluminescence device using the method of the invention of 1358240 is to form a non-emission pattern by using an organic compound which is the same as the organic compound used in the light-emitting layer at the peripheral portion of the light-emitting region. The use of a vaporized mask having such a mask member, due to the stress difference in the mask member, etc., does not affect the effective opening region existing inside the virtual opening, and all effective opening regions can be The pattern of the high-definition light-emitting layer can be formed by adhering the material to be vaporized with good precision. - in other words, the effective opening area means the area which is joined to the effective opening which exists in the outermost side, and is drawn by the closed line including the shortest length thereof. In addition, the preferred method of sufficiently obtaining the effect of the present invention is preferably. The virtual opening is disposed around the effective opening region, and the outermost peripheral portion of the opening region (including the effective opening and the virtual opening) has a straight portion of 10 mm or more (refer to FIG. 9). In this way, the number of local flexures can be effectively dispersed, and the shape and size are not particularly limited. It suffices that the number is one or more, but it is preferable that one or more of the upper and lower sides of the effective opening region are used, and more preferably three or more. The shape may be a rectangle or a circle. Alternatively, the size may be greater than or less than the effective opening. The virtual opening can be formed into a single shape, but in order to facilitate the fabrication of the mask member, it is preferable to arrange it in the same manner as the pattern of the effective opening, if the specified distance between the effective openings is in the longitudinal direction. When m is arranged and n is arranged in the horizontal direction, the entire opening is arranged in the longitudinal direction by m + 1 or more, and/or the n + 1 or more 1358240 is arranged in the lateral direction, that is, it is preferable to use m χ η openings. A virtual opening outside the part. In the present invention, a plurality of mask members may also be used, and one of the mask members may be a mask member having the above-described virtual opening. In the case where the mask member is used, the respective mask members may be separated from each other or may be in contact with each other. The mask member is easy to handle, and is usually fixed to a frame to which tension is applied, but it is also possible to directly use the mask member as a vapor mask. When the frame is used, the shape thereof is not particularly limited, and various aspects can be considered. _ Hereinafter, specific examples will be described in accordance with the accompanying drawings. As shown in Fig. 6, a portion of the portion other than the margin that is fixed to the frame (hereinafter referred to as a portion of the vapor mask active area) is substantially entirely formed, and a mask member that opens in a pattern of a desired luminescent pixel is formed. (Upper mask member) and a mask member (lower mask member) having an opening larger than the light-emitting region, by overlapping the same, the upper mask member forms an effective opening that is not covered by the lower mask member and is The virtual opening, which is shielded by the lower mask member, can be used to obtain the steaming mask of the present invention. At this time, part or all of the virtual opening is partially or completely covered by the lower cover member. In such a configuration, it is not necessary to laminate two mask members, and it is possible to overlap only or not. In addition, according to these methods, since the upper mask member has a fully uniform opening portion, it is less likely to cause in-plane stress difference or distortion, etc., the accuracy of sticking to the frame and the accuracy of the pattern produced by evaporation can be improve. Further, the evaporation of the luminescent layer is performed by providing the upper mask side on the side of the vapor-deposited member, and it is preferable to bond the upper mask to the member to be vaporized. -12- 1358240 The lower mask member is desirably such that one edge of the opening is outside the area surrounded by the virtual opening of the upper mask member and is at a distance of 500 μm from the outer edge of the effective opening area. The inside of the enclosed area. With such a configuration, a pattern in which a dummy opening is not formed, or a slight portion existing on the outer side of the effective opening region (when the pattern is used as an organic electric field light-emitting device, it is preferably formed at an outer edge of the light-emitting region. 0μιη or 戋力口1;^ stomach-dust-selection @ ' ^0 becomes the cause of the subsequent failure of the wiring, etc., and can be a good post-processing efficiency. In addition, the thickness of the lower member can be reduced or eliminated. In other words, the area surrounded by the virtual opening is the area of the virtual opening that joins the effective opening area, and the area of the closed line that does not contain the shortest length. (However, when the corner of the effective opening area is not When there is a virtual opening, the virtual opening closest to the corner portion maintains the same distance to the effective opening area and exists in the corner portion. Further, when using these methods, as shown in FIGS. 7 and 11 It is also easy to manufacture the steamed mask corresponding to the multi-chamfering. Further, as shown in Fig. 12, when the mask member and the frame are combined, the mask member may be It does not have to be fixed to the cross frame of the frame. ^ In the example of Fig. 6 and Fig. 7, 'because the two mask members are overlapped, they can be fixed to the frame, but for a higher precision pattern. Preferably, the upper mask member is formed on the upper surface of the frame with the fine pattern formed on the substrate, and the mask member is fixed on the inner side of the frame to define the lower portion of the evaporation region. It is not necessary to apply -13 - 1358240. In addition, in the case where part or all of the virtual opening is partially or completely covered by the frame portion, it is preferably performed in the same manner as when the lower cover member is covered by the dummy opening as described above. Design. In order to obtain good pattern accuracy, use a mask having more than 90% of the area of the vaporized mask, preferably 95% or more, as the mask member, and use an effective opening and a virtual opening. The average area of the effective opening (the area of the effective opening/the number of virtual openings) and the average area of the virtual opening (the area of the virtual opening or the virtual area) The ratio of the number of openings to be opened (hereinafter referred to as the aperture ratio) is preferably in the range of 50 to 200 ° /, more preferably 80 to 125%. The size of the steamed mask is as large as possible. The opening, and the aperture ratio is close to 100%, so that it is easy to calculate the degree of stretch when the tension is applied to the mask member, which can improve the shape retention, the accuracy of the fixing of the frame, and the accuracy of pattern making. In the case of the example of the steamed mask shown in Fig. 7, one of the virtual openings is partially covered and concealed by another mask member (lower mask member). The lower mask member is advantageously limited to the light-emitting area, and is not required. The positional accuracy of the pixel level, that is, when one of the virtual openings is covered and concealed, and a part is not concealed, since the pattern through the virtual opening does not constitute a luminescent pixel, no problem arises. A specific example of the method of manufacturing the organic electric field light-emitting device will be described below, but the present invention is not limited to this specific example. The transparent substrate θ on which a transparent electrode film of indium tin oxide (ITO) or the like is formed is patterned by photolithography, and a plurality of strip-shaped first electrodes are formed to be arranged at a constant interval by 1358240. The organic electric field light-emitting device of the present invention may further have an insulating layer formed to cover a portion of the first electrode. As the material of the insulating layer, various inorganic and organic materials can be used. For the inorganic material, an oxide material such as oxidized lanthanum, oxidized fine, titanium oxide or chromium oxide, lanthanum, potassium arsenide, or the like can be used. For the semiconductor material, a glass material, a ceramic material, or the like, and a polymer material such as a polyethylene-based polyimide, a polystyrene, a lacquer, or a sand can be used. When the insulating layer is formed, various known forming methods can be used. The illuminating pixel of the organic electroluminescence device of the present invention is a thin film layer containing a light-emitting layer composed of an organic compound, and is sandwiched between a second electrode and a second electrode. The structure of the film layer is not particularly limited as long as it includes the light-emitting layer. For example, (1) hole transport layer/light-emitting layer' (2) hole transport layer/light-emitting layer/electron transport layer' (3) light emission The layer/electron transport layer, and (4) the material used in part or all of one of the layers of the above-described structure, is any one of a mixture of layers. . At least the luminescent layer needs to be patterned. In the case of a full-color display device, in the red (R), green (G), and blue (B) colors, a luminescent material corresponding to three luminescent colors having a light-emitting peak wavelength is used, and the sequential formation is performed. a kind of luminescent layer. In the present invention, the luminescent layer forms a strip-like pattern, but the strip shape here includes, in addition to forming the continuous elements of the strip, a pattern in which the intermittent pattern is arranged on a straight line. Intermittent patterns provide a fine picture of positional accuracy and good adhesion. In this case, it is preferable to arrange the patterns of the light-emitting layers by -15 - 1358240 to be the same as or integral with the pixel. ‘ After the formation of the thin film layer, a second electrode is formed. In the simple matrix method, a plurality of strip-shaped second electrodes are patterned on the film layer, and are disposed so as to intersect with the first electrode and have a constant interval. On the other hand, in the action matrix method, the second electrode covering the entire light-emitting region is often formed. In the second electrode, since it is required to have a function as a cathode capable of effectively implanting electrons, a metal material which is considered to have stability of the electrode is often used after sealing the pattern of the second electrode, and is sealed to be connected to the driving circuit. To obtain an organic electric field illuminating device. Further, the first electrode is an opaque electrode. The second electrode is transparent, and light can be taken out from the upper surface of the pixel. Alternatively, the first electrode may be a cathode and the second electrode may be an anode. Further, 'the processing of the η-based portion (n is an integer of 2 or more) on one substrate", if the step of cutting the substrate into n is used, since the production efficiency can be improved, it is advantageous in mass production. Reduced manufacturing costs. Since the organic electroluminescence device of the present invention can perform the patterning of the high-definition layer of the light-emitting layer, the combination of the pixels of the respective colors can be made into one unit, and the distance between the pixel sets can be 5 〇〇μηι or less. , better for 400μιη below. EXAMPLES Hereinafter, the invention will be described by way of examples and comparative examples, but the invention is not limited to the examples. 1358240 Example 1 at a thickness of 1. On the surface of the 1 mm alkali-free glass, an ITO transparent electrode film having a thickness of 130 nm was formed by a sputtering method, and the glass substrate was cut into a size of 120 x 10 mm. A photoresist is applied onto the ITO substrate, and the pattern is developed by exposure by ordinary photolithography. After the unnecessary portion of IT 0 was removed by etching, the photoresist was removed, and the ITO film pattern was formed into a strip shape having a length of 90 mm and an amplitude of 80 μm. 816 of the strip-shaped first electrodes were arranged at a distance of ΙΟΟμηι. Then, a positive-type photoresist (OFPR-8) manufactured by Tokyo Ohka Kogyo Co., Ltd. was applied onto the substrate on which the first electrode was formed by a spin coating method to have a thickness of 3 μm. The coating film was subjected to pattern exposure through a photomask to pattern the developed photoresist, and after curing, it was aged at 180 °C. In this manner, the unnecessary portion of the insulating layer is removed, and the opening portion of the insulating layer having a length of 23 5 μm and a lateral direction of 70 μm is formed on the strip-shaped first electrode, and 200 pitches are formed in the longitudinal direction at 3 ΟΟμηι, and 100 in the lateral direction. The μηι spacing forms 816. The cross section of the edge portion of the insulating layer has a chamfered shape. The substrate on which the insulating layer was formed was subjected to dehydration treatment at 80 ° C under a reduced pressure atmosphere of 1 OPa for 20 minutes. The film layer including the light-emitting layer is formed by a vacuum evaporation method using a resistance wire heating method. Further, the degree of vacuum at the time of evaporation was 2 x 10 0 - 4 Pa or less, and the substrate was relatively rotated with respect to the evaporation source during the evaporation. First, copper phthalocyanine was made into 15 nm' bis (N-ethyl carbazole) to be 60 nm, and was completely vaporized in the light-emitting region to form a hole transport layer. The luminescent layer was vapor-coated with a vapor mask using a 1358240 vented opening having an opening portion. The shape of the mask member is 1 2 0x84 mm and the thickness is 25 μιη 'longitudinal 61. 77111111, horizontal direction 10 (the opening portion of ^111 has an opening area of 278 in the horizontal direction at 30 (^111). Between the openings, a distance of 300 μπι is set to 205, and the reinforcing line is 3 Ομιη. The number of the opening portions of the reinforcing line drawing is 206 in the longitudinal direction, wherein the effective opening portion is 200, and the opening portion of the reinforcing line region is one of the longitudinal direction of 2 70 μm and lateral ΙΟΟ μιη. The mask member is fixed at A frame made of stainless steel with a width of 4 mm. The light-emitting layer is placed in front of the substrate with a vapor mask, and the two are placed in close contact with each other. A ferrite-plate magnet is placed behind the substrate (YBM-1B, manufactured by Hitachi Metals Co., Ltd.) At this time, the opening of the insulating layer is disposed so as to overlap the effective opening of the vapor deposition mask, and the virtual opening is positioned three times above and below the light-emitting region. The vapor mask is in contact with the film thickness. The thick insulating layer, because it is not in contact with the previously formed hole transport layer, can prevent the mask from being injured in this state, and the doping of 21 nm is 0. 3 wt% of 1,3,5,7, 8-pentamethyl-4,4-di-p--4-boron 3a, 4a-diaza-S·Indactyl (PM546) 8-hydroxyquinoline The aluminum complex (Alq3) is patterned into a green light-emitting layer. · . Next, the evaporation mask is shifted to the right by one pitch portion, and the I5 nm is doped with 1% by weight of 4-(dicyanomethane)-2-methyl-6-(dimethylstilbene). Alq3 of pyran (DCJT) is patterned into a red light-emitting layer. Then, the vaporized mask was shifted to the left by two pitch portions, and 4,4'·bis(2,2·-diphenylvinyl)diphenyl (DPVBi) of 20 nm was evaporated, and the pattern was blue. Light-emitting layer. The light-emitting layers of each of green, red, and blue are disposed in three of the -18- 1358240 strip-shaped first electrodes, and are exposed to the exposed portion of the first electrode. Further, in the structure of the pixel, the region of the organic compound for the light-emitting layer which is not used is simultaneously arranged three at the top and three at the left and right. Next, 35 nm of DPVBi and 10 nm of Alq3 were completely evaporated in the light-emitting region. Then, the film layer is exposed to lithium vapor for doping (film thickness conversion amount of 0. 5 n m ) 构造 The structure of the vapor mask of the second electrode pattern is formed with a gap between the surface of the mask member joined to the substrate and the reinforcing line. The mask member has a shape of 120 x 84 mm and a thickness of ΙΟΟμηι, and 200 strips of a length of 100 mm and a width of 250 μm are arranged at a pitch of 300 μm. A mesh-like reinforcing line is formed on the mask member, and is composed of a square hexagonal structure having a width of 40 μm and a thickness of 35 μm and a distance of 200 μm between the two sides. The height of the gap is equal to the thickness of the mask member and becomes 100 μm. The mask member is fixed to a frame made of stainless steel having a shape equal to 4 mm in width. The second electrode is formed by a vacuum evaporation method using a resistance wire heating method. Further, the degree of vacuum at the time of evaporation was 3 x 1 (T4 Pa or less, and the two substrates were relatively rotated by the substrate during the evaporation. The second electrode was placed on the substrate by the vapor deposition mask in the same manner as the pattern of the light-emitting layer. In the front, the magnets are placed in close contact with each other, and the magnets are placed behind the substrate. In this case, the openings of the insulating layer are overlapped with the effective openings of the vapor deposition mask. In this state, aluminum having a thickness of 200 nm is evaporated. The second electrode is patterned. The second electrode is disposed perpendicular to the first electrode, and the pattern is formed in a strip shape. The substrate is taken out from the steaming machine and held for 20 minutes under a reduced-pressure atmosphere gas formed by a rotary pump. Thereafter, it is transferred to an argon ring-19-1358400 gas having a dew point of -90 ° C or less. Under this low-humidity atmosphere, a substrate and a sealing glass plate are bonded together using a curable epoxy resin, and sealed. In this manner, a patterned green light-emitting layer, a red light-emitting layer, and a blue light-emitting layer are formed on the strip-shaped electrode having an amplitude of 80 μm, a pitch of ΙΟΟμιη, and a number of 816. Matrix color In the organic electroluminescence device, a strip-shaped second electrode having a width of 250 μm and a pitch of 300 μm is disposed so as to be orthogonal to the first electrode. Since one red, green, and blue are formed, that is, Since a total of three illuminating pixels are a single pixel set, the present illuminating device has a set of 272 x 200 pixels having a pitch of 300 μm. The linear sequential driving of the organic electric field illuminating device can obtain good display characteristics. In the pixel, it was confirmed that there is no color mixture of adjacent pixels, and a good light-emitting layer pattern can be formed in the entire light-emitting region. Example 2 The effective opening portion of the vapor-emitting layer for the light-emitting layer is 200 in the vertical direction and 272 in the horizontal direction. As shown in Fig. 10, an organic zero-field light-emitting device was produced in the same manner as in Example 1 except that a circular virtual opening of 200 mm in diameter around 3 mm of the effective opening area was arranged at a pitch of 400 μm. When the organic electric field light-emitting device is sequentially driven, good display characteristics can be obtained. In addition, by using a microscope to observe the luminescent pixels, it is possible to confirm No color mixing of adjacent pixels, the better the overall good light-emitting layer can be patterned "-20-1358240 Example 3 using a sputtering method in a thickness of 1 is formed to cover the light emitting region. On the surface of the 1 mm alkali-free glass, an ITO transparent electrode film having a thickness of 130 nm was formed, and the glass substrate was cut into a size of 120 x 100 mm. A photoresist is applied onto the ITO substrate, and image formation is performed by exposure by ordinary photolithography. After removing the unnecessary portion of IT 0 by etching, the photoresist was removed, and the IT 0 film pattern was formed into a strip shape having a length of 90 mm and an amplitude of 160 μm. 408 pieces of the strip-shaped first electrode were arranged at a distance of 200 μm. Then, a positive-type photoresist (OFPR-800, manufactured by Tokyo Ohka Kogyo Co., Ltd.) was applied onto the substrate on which the first electrode was formed by a spin coating method to have a thickness of 3 μm. The coating film was subjected to pattern exposure through a photomask to pattern the developed photoresist, and was aged at 180 ° after development. In this manner, the unnecessary portion of the insulating layer is removed, and the insulating layer opening portion of the longitudinal direction of 47 0 μm and the lateral direction of 140 μm is formed on the first electrode of the strip shape, and is formed at a pitch of 600 μm in the longitudinal direction by 100 Å in the lateral direction. The 200 μιη pitch forms 408. The cross section of the edge portion of the insulating layer has a chamfered shape. The substrate on which the insulating layer was formed was placed under a reduced pressure atmosphere of 80 ° C and lOPa for 20 minutes for dehydration treatment. The film layer including the light-emitting layer is formed by a vacuum evaporation method using a resistance wire heating method. The degree of vacuum at the time of evaporation is 2xl (T4Pa or less, and the substrate is relatively rotated by the evaporation source during evaporation. First, the copper phthalocyanine is 15 nm, and the bis-(N-ethylcarbazole) is 60 nm. The illuminating region is fully vaporized to form a hole transporting layer. The illuminating layer is covered with a vaporized mask using an opening region in which the opening portion is arranged. The outer shape of the mask member is 1 2 0x 8 4mm, thickness is 25μηι, longitudinal 63. The opening portion of 54 mm and 200 μm in the lateral direction has an opening area in which 1,42 are arranged at a pitch of 600 μm in the lateral direction. A reinforcing line of 105 amplitudes of 60 μm is provided at a pitch of 600 μππ in each opening. That is, the number of the openings of the line to be reinforced is 106 in the longitudinal direction, and the number of the effective openings is 100, and the size of the opening of the line to be reinforced is 540 μm in the longitudinal direction and 200 μm in the horizontal direction. The mask member is fixed to a frame made of stainless steel having a shape equal to 4 mm in width. The light-emitting layer was placed in front of the substrate by a vapor mask, and the two were adhered to each other, and a ferrite-plate magnet (YBM-1B, manufactured by Hitachi Metals Co., Ltd.) was placed behind the substrate. At this time, the opening of the insulating layer is disposed so as to overlap the effective opening portion of the vapor deposition mask, and the virtual opening portion is positioned three at the top, bottom, left, and right of the light-emitting region. The vaporized mask is in contact with the insulating layer having a thick film thickness, and since it is not in contact with the previously formed hole transporting layer, the mask can be prevented from being damaged. In this state, the doping of 21 nm is 0. 3% by weight of 1,3,5, 7,8-pentamethyl-4,4-di-p--4-boron 3&, 4&-diazo-8-Indamine (?1^546) The 8-hydroxyquinoline aluminum complex (Alq3) was patterned into a green light-emitting layer. Next, the evaporation mask is shifted to the right by one pitch portion, and 15 nm is doped with 1% by weight of 4·(dicyanomethane)-2-methyl-6-(dimethylstilbene). The Alq3' pattern of pyran (DCJT) was fabricated into a red light-emitting layer. Then, the vaporized mask was shifted to the left by two pitch portions, and 20 nm of 4,4'-bis(2,2'-diphenylvinyl)diphenyl (DPVBi) was evaporated, and the pattern was blue. Light-emitting layer. Each of the green, red, and blue light-emitting layers is disposed on the strip -22-J35B240, and the three strip-shaped first electrodes are completely covered by the exposed portion of the first electrode. Further, in the structure of the pixel, the region of the organic compound for the light-emitting layer which is not used is simultaneously arranged in three upper and lower portions of each of the left and right sides. Next, a 35 nm DPVBi and a 10 nm A 1 are uniformly evaporated in the light-emitting region. Q3. Then, the film layer is exposed to lithium vapor' for doping (film thickness conversion amount is 0. 5 n m). The structure of the vapor mask of the second electrode pattern is formed with a gap between the surface of the mask member joined to the substrate and the reinforcing line. The mask member has a shape of 120 x 84 mm and a thickness of 100 μm, and a strip-shaped opening having a length of l〇〇mm and a width of 500 μm is arranged at a pitch of 600 μm. A mesh-like reinforcing line is formed on the mask member, and is composed of a positive hexagonal structure having an amplitude of 40 μm and a thickness of 35 μm and a distance of 200 μm between the two sides. The height of the gap is equal to the thickness of the mask member, and becomes ΙΟΟμηη. The mask member is fixed to a frame made of stainless steel having a shape equal to 4 mm in width. The second electrode is formed by a vacuum evaporation method using a resistance wire heating method. In addition, the degree of vacuum at the time of steaming is 3xl (T4Pa or less, and the two substrates are relatively rotated by the substrate during the evaporation. The second electrode is placed in the same manner as the pattern of the light-emitting layer, and the second electrode is placed in the vapor mask. In front of the substrate, the two are placed in close contact with each other, and the magnet is placed behind the substrate. At this time, the two are disposed so that the opening of the insulating layer overlaps with the effective opening of the vapor mask. In this state, the thickness is 20 0 Onm. The second electrode is patterned by aluminum, and the second electrode is disposed so as to be orthogonal to the first electrode, and the pattern is formed in a strip shape. The substrate is taken out from the vaporizer and is under a reduced-pressure atmosphere of the rotary pump substrate. After 20 minutes, 'transfer to a dew point of -90. (: The following argon ring -23- 1358240 gas. Under this low-humidity environment, use a curable epoxy resin to bond the substrate and the sealing glass plate, In this manner, a patterned green light-emitting layer, a red light-emitting layer, and a blue light-emitting layer are formed on a strip-shaped first electrode having an amplitude of 160 μm, a pitch of 200 μm, and a number of 408. To make simple matrix color In the organic electric field light-emitting device, 100 strip-shaped second electrodes having a width of 500 μm and a pitch of 600 μm are disposed so as to be orthogonal to the first electrode. One, one green and one blue, that is, a total of three illuminating pixels are one pixel set, so the present illuminating device has a pixel set of 1 36 x 100 pixels with a pitch of 600 μm. The line sequential driving of the organic electric field light-emitting device can obtain good display characteristics. Further, when the luminescence pixel is observed by a microscope, it is confirmed that the edge portion of the luminescence pixel is blurred at the outer periphery of the luminescence region. It is not conducive to the adhesion of the substrate and the vapor mask, but does not cause color mixing. . Embodiment 4 Using a sputtering method in a shape of 500 x 400 mm, thickness 0. A 7 mm alkali-free glass surface was formed into an ITO transparent electrode film having a thickness of 30 nm, and a photoresist was applied onto the ITO substrate, and exposure was carried out by usual photolithography to develop a pattern. After the unnecessary portion of the ITO was removed by etching, the photoresist was removed, and the ITO film pattern was patterned into a stripe pattern having a length of 90 mm and an amplitude of 8 μm. Arranging 8 16 pieces of the strip-shaped first electrode 'with a distance of 100 μm to make the light-emitting area of the diagonal 4 形成 form 16 faces, and divide the glass into 4 pieces of 200×2 14 mm to make 4 chamfers. Then the substrate. Then, a positive-type photoresist (OFPR-800, manufactured by Tokyo Ohka Kogyo Co., Ltd.) was coated on the substrate on which the first electrode was formed by a spin coating method to a thickness of 2 μm. Then, it was pseudo-hardened at 1 20 ° C and subjected to pattern exposure through a disc. Then, patterning of the developed photoresist was carried out, and aging was carried out at 23 ° C after the development. In this manner, the unnecessary portion of the insulating layer is removed, and the opening portion of the insulating layer having a length of 23 μm and a lateral direction of 7 μm is formed on the first electrode of the strip shape, and 200 is formed at a pitch of 300 μm in the longitudinal direction and 1 at a lateral direction in the lateral direction. 0 Ομηι spacing forms 8 1 6 . The section of the edge portion of the insulating layer has a chamfered shape. The substrate on which the insulating layer was formed was placed under an ambient gas of 8 〇t, l 〇Pa for 20 minutes for dehydration treatment. The film layer including the light-emitting layer is formed by a vacuum evaporation method using a resistance wire heating method. Further, the degree of vacuum at the time of evaporation was 2x1 (T4Pa or less, and the substrate was relatively rotated with respect to the evaporation source during evaporation. First, copper phthalocyanine was made into 15 nm, and bis-(N-ethylcarbazole) was 60 nm. The entire area of the light-emitting area is evaporated to form a hole transport layer. The vapor-emitting layer uses an evaporation mask having four open areas in which openings are arranged. The shape of the mask member is 200 x 214 mm, thickness. It is 25μιη, longitudinal 6I. The opening portion of the 77 mm and the lateral ΙΟΟμπι has four opening regions which are arranged at a pitch of 300 μm in the lateral direction, and are disposed at positions corresponding to the ΙΤΟ pattern of the four chamfered ruthenium substrates previously produced. A reinforcing line having an amplitude of 30 Ομηι is provided in each opening, and 205 are arranged at a pitch of 300 μη. That is, the number of the openings of one open area of the reinforcing line drawing is 206 in the longitudinal direction, wherein the number of effective openings is 200, and the size of the opening of the line of the reinforcing line is 270 μm in the vertical direction. ΙΟΟμπι. The mask member has an opening of 163 x 2 mm and is fixed to the frame of ultra low expansion steel -25-1358240, and the area of the vapor mask is 1 63x20 1 mm. The light-emitting layer was placed in front of the substrate by a vapor mask, and the two were adhered to each other, and a ferrite-plate magnet (YBM-1B, manufactured by Hitachi Metals Co., Ltd.) was placed behind the substrate. At this time, the opening of the insulating layer is disposed so as to overlap the effective opening portion of the vapor deposition mask, and the virtual opening portion is positioned three at the top, bottom, left, and right of the light-emitting region. The vaporized mask is in contact with the insulating layer having a thick film thickness, and since it is not in contact with the previously formed hole transporting layer, the mask can be prevented from being damaged. In this state, the doping of 21 nm is 0. 3 wt% of 1,3,5,7,8-pentamethyl-4,4-dipoxy-4-boron 3&, 43-diazo-3-indoxa (?1^546) of 8 -Hydroxyquinoline aluminum complex (Alq3), patterned into a green light-emitting layer. Next, the evaporation mask is shifted to the right by one pitch portion, and 15 nm is doped with 1% by weight of 4-(dicyanomethane)-2-methyl-6-(dimethylstilbene). Alq3 of pyran (DCJT), patterned into a red light-emitting layer. Then 'move the steamed mask to the left by 2 pitches, and steam 4nm 4,4|-bis(2,2'-diphenyl Vinyl)diphenyl (01^8丨), patterned into a blue light-emitting layer. Each of the green, red, and blue light-emitting layers is disposed in the three strip-shaped first electrodes to completely cover the exposed portions of the first electrodes. Further, in the structure of the pixel, the region of the organic compound for the light-emitting layer which is not used is simultaneously arranged three at the top and three at the left and right. Secondly, 35nm DPVBi and 10nm are fully evaporated in the light-emitting region.
Alqs。然後’使薄膜層曝露在鋰蒸氣，進行摻雜（膜厚換算 量 0.5 nm) 〇 第2電極圖案製作用之蒸著遮罩之構造在遮罩構件之 -26- 1358240 與基板接合之面和補強線之間存在有間隙。遮罩構件之外 形爲200x214mm、厚度爲ΙΟΟμηι，以間距300μηι配置2〇〇 根之長度100mm，幅度250μΐη之條帶狀開口部。在遮罩構 件之上形成網目狀之補強線，由幅度40μπι、厚度35μιη， 面對之二邊之間隔爲200μπι之正六角形構造構成。間隙之 高度與遮罩構件之厚度相等，成爲10 0 μιη。遮罩構件被固 定在具有163 x2 01 mm之開口之超低膨脹鋼之框架，蒸著遮 罩活用區域爲163x201mm。 第2電極利用電阻線加熱方式之真空蒸著法形成。另 外’蒸著時之真空度爲3x1 (T4Pa以下，在蒸著中基板對2 個蒸著源進行相對旋轉。與發光層之圖案製作同樣的，將 第2電極用蒸著遮罩配置在基板前方，使兩者密著，將磁 鐵配置在基板後方。這時將兩者配置成使絕緣層開口部和 蒸著遮罩之有效開口部重疊。在此種狀態蒸著厚度20 Onm 之鋁，對第2電極進行圖案製作。第2電極被配置成與第 1電極正交，圖案製作成條帶狀。 從蒸著機取出本基板，在利用旋轉泵形成之減壓環境 氣體下，保持20分鐘後，轉移到露點爲-9(TC以下之氬環 境氣體中。在該低濕環境氣體下，使用硬化性環氧樹脂貼 合基板和密封用玻璃板，將其密封。 依照此種方式，在幅度爲8 0 μηι、間距爲1 0 0 μιη、根數 爲816根之IT 0.條帶狀第1電極上，形成被圖案製作之綠 色發光層、紅色發光層和藍色發光層，在4面裝載有機電 場發光裝置，以與第1電極正交之方式配置200根之幅度 -27- 1358240 爲2 5 0 μηι '間距爲3 00 μιη之條帶狀之第2電極。藉以獲得 與玻璃基板’密封用·玻璃板一起分割成爲4部分之對角4 吋之單純矩陣型玻璃有機電場發光裝置。因爲形成紅、綠 、藍各1個，亦即3個發光像素形成1個之像素集合，所 以本發光裝置以300μηι間距具有272x200個之像素集合。 線順序驅動本有機電場發光裝置，可以獲得良好之顯 示特性。另外，利用顯微鏡觀察發光像素時，確認不會有 對鄰接之像素混色等，涵蓋發光區域全面的可以形成良好 之發光層圖案。發光層之圖案製作精確度在±1〇μηι以內。 實施例5 縱向2 7 0 μηι、橫向1 0 0 μιη之開口部，以縱橫3 0 0 μιη間 距’將被排列在蒸著遮罩活用區域全面（90%以上）之外形爲 200x214mm之遮罩構件，固定在與實施例4相同之框架之 上面。另外，因爲比發光區域稍大，所以將被設在4個位 置之開口之外形1 62 x200mm之遮罩構件，配置在上述蒸著 遮罩之蒸著源側之正下，以框架之內側固定。兩個遮罩構 件之間不互相接著。依照此種方式設置第7圖所示之發光 層用之蒸著遮罩。除此之外，製作成與實施例1同樣之有 機電場發光裝置。 線順序驅動本有機電場發光裝置，可以獲得良好之顯 示特性。另外，利用顯微鏡觀察發光像素時，確認不會對 鄰接之像素混色等，涵蓋發光區域全面的可以形成良好之 發光層圖案。另外，在像素之構造中，未使用之發光層用 有機化合物之區域被配置成上下各1個左右各3個，其中 -28- 1358240 之一部分成爲中途半端之形狀。發光層之圖案製作精確度 在±7 μπι以內。經由在蒸著遮罩活用區域全面排列開口部’ 因爲可以減小遮罩之撓屈，所以可以更進一步的提高圖案 製作精確度。 實施例6 發光層用蒸著遮罩使用以縱橫300 μπι間距，將縱向 27〇μπι、橫向100 μιη之開口部，排列在蒸著遮罩活用區域 (90%以上）之外形爲200x2 1 4mm之遮罩構件，貼合在追加 有十字框之超低膨脹鋼製之框架。這時，十字框之部分亦 與蒸著遮罩接著。利用此種方式，設置第11圖所示之發光 層用之蒸著遮罩。除此之外可以製作與實施例4同樣之有 機電場發光裝置。經由在框架追加十字框，利用該蒸著遮 罩，在4面形成比發光區域稍大之發光層圖案。 線順序驅動本有機電場發光裝置，可以獲得良好之顯 示特性。另外，利用顯微鏡觀察發光像素時，確認不會對 鄰接之像素混色等，涵蓋發光區域全面的可以形成良好之 發光層圖案。另外，在像素之構造中，未使用之發光層用 有機化合物之區域被配置成上下各1個左右各3個，其中 之一部分成爲中途半端形狀。發光層之圖案製作精確度在 ± 5 μπι以內。經由追加十字框因爲框架之變形變小，所以可 以更進一步的提高圖案製作精確度。 比較例1 使發光層用蒸著遮罩之開口部成爲縱向200個、橫向 272個’除此之外製作與實施例1同樣之有機電場發光裝 -29- 1358240 置。亦即，在發光層用蒸著遮罩未具有虛擬開口部，製作 第1電極和第2電極之重疊發光區域，與發光層用蒸著遮 罩之有效開口區域成爲一致之單純矩陣型彩色有機電場發 光裝置。 線順序驅動本有機電場發光裝置，確認會對發光區域 之外周部鄰接之像素混色。亦即，遮罩構件之遮罩區域和 開口區域之境界部分所發生之燒屈，不利於基板和蒸著遮 罩之密著。 【圖式簡單說明】 第1圖是平面圖’用來表示像素集合之一實例。 第2圖是欠缺一部分構造之槪略斜視圖，用來說明有 機電場發光裝置之構造之一實例。 第3(a)、（b)圖是槪略圖，用來表示蒸著遮罩之—實例 ’其中第3(a)圖是平面圖、第3(b)圖是剖面圖。 第4(a)、（b)、（c)圖是槪略斜視圖’用來表示蒸著遮罩 之一實例，其中第4(a)圖未導入有補強線之蒸著遮罩之一 實例’第4 (b)圖是導入有補強線之蒸著遮罩之一實例，第 4(c)圖是導入有補強線之蒸著遮罩之另—實例。 第5圖是槪略圖，用來說明遮罩蒸著法。 第6(a)、（b)圖是貼合型蒸著遮罩（1倒角蒸著遮罩）和 其蒸著圖案之槪略圖’其中第6(a)圖用來說明蒸著遮罩之 構造，第6(b)圖用來說明其蒸著圖案。 第7(a) '(b)圖是貼合型蒸著遮罩（4倒角蒸著遮罩）和 其蒸著圖案之.槪略圖’其中第7(a)圖用來說明蒸著遮罩之 1358240 構造’第7(b)圖用來說明其蒸著_案。 第8圖疋平面圖，用來表示具有虛擬開口部之蒸著遮 罩之一實例。 第9圖是平面圖，用來表示以在開口區域（包含有效開 口和虛擬開口）之最外周部未具有1〇mm以上之直線部分之 方式’將虛擬開口配置在有效開P區域之周圍之蒸著遮罩 之一實例。 第10圖是平面圖’用來表示具有虛擬開口部之蒸著遮 罩之另一實例。 第11(a)、（b)圖是在框架追加有十字框之蒸著遮罩（有 十字框和蒸著遮罩之接著），和其蒸著圖案之槪略圖，其中 第1 1(a)圖用來說明蒸著遮罩之構造，第1 1(b)圖用來說明 其蒸著圖案。 第12(a)、（b)圖是在框架追加有十字框之蒸著遮罩（無 十字框和蒸著遮罩之接著），和其蒸著圖案之槪略圖，其中 第12(a)圖用來說明蒸著遮罩之構造，第12(b)圖用來說明 其蒸著圖案。 【主要元件符號說明】 1 基板 2 第1電極 3 絕緣層 4 共同有機層 5 發光層 6 第2電極 -31- 1358240 7 遮 罩 區 域 8 遮 罩 框 架 9 開 □ 區 域 10 開 □ 部 11 補 強 線 12 蒸 著 源 13 有 效 開 □ 域 14 虛 擬 開 □ 15 圓 形 之 虛 擬 開 □ 16 沒 有 補 強 線 之 條 帶 狀 圖 案 形 成用蒸著遮罩 17 導 入 有 1 根 補 強 線 之 蒸 著 遮 罩 18 導 入 有 3 根 補 強 線 之 蒸 著 遮 罩 19 紅 色 發 光 像 素 20 綠 色 發 光 像 素 2 1 藍 色 發 光 像 素 22 像 素 集. 合 2 3 對 框 架 追 加 之 十 字 框 2 4 基 y、'、 著 遮 罩 -32-Alqs. Then, the film layer is exposed to lithium vapor and doped (the film thickness is 0.5 nm). The structure of the vapor mask of the second electrode pattern is formed on the surface of the mask member -26- 1358240 bonded to the substrate. There is a gap between the reinforcing lines. The mask member has a shape of 200 x 214 mm and a thickness of ΙΟΟμηι, and a strip-shaped opening having a length of 100 mm and a width of 250 μΐ is disposed at a pitch of 300 μm. A mesh-like reinforcing line is formed on the mask member, and is composed of a positive hexagonal structure having an amplitude of 40 μm and a thickness of 35 μm and a distance of 200 μm between the two sides. The height of the gap is equal to the thickness of the mask member, which is 10 0 μηη. The mask member was fixed to a frame of ultra-low expansion steel having an opening of 163 x 2 01 mm, and the area of the vapor mask was 163 x 201 mm. The second electrode is formed by a vacuum evaporation method using a resistance wire heating method. In addition, the vacuum degree at the time of steaming is 3x1 (T4Pa or less, and the two substrates are relatively rotated by the substrate during the evaporation. The same as the pattern of the light-emitting layer, the second electrode is placed on the substrate by the vapor deposition mask. In the front, the magnets are placed in close contact with each other, and the magnets are placed behind the substrate. In this case, the openings of the insulating layer and the effective opening of the vapor mask are overlapped. In this state, aluminum having a thickness of 20 nm is evaporated. The second electrode is patterned. The second electrode is disposed perpendicular to the first electrode, and the pattern is formed in a strip shape. The substrate is taken out from the steaming machine and held for 20 minutes under a reduced-pressure atmosphere gas formed by a rotary pump. After that, it is transferred to an argon atmosphere having a dew point of -9 (TC or less. Under this low-humidity atmosphere, the substrate and the sealing glass plate are bonded together using a curable epoxy resin. In this manner, On the first electrode with a width of 80 μm, a pitch of 100 μm, and a root number of 816, a patterned green light-emitting layer, a red light-emitting layer, and a blue light-emitting layer are formed on the strip. Surface loading organic electric field illuminating device The second electrode is disposed so as to be orthogonal to the second electrode of the glass plate 'sealing glass plate' with a width of -27 to 1358240 of 2,500 μm and a pitch of 300 μm. A simple matrix type glass organic electric field illuminating device of 4 parts diagonally 4 。. Since one red, green and blue light is formed, that is, three illuminating pixels form one pixel set, the present illuminating device has a 272x200 spacing of 300 μηι. The pixel set is driven by the line sequential driving of the organic electric field illuminating device, and good display characteristics can be obtained. When the illuminating pixel is observed by a microscope, it is confirmed that there is no color mixing of adjacent pixels, and the entire illuminating region can be formed well. Light-emitting layer pattern. The patterning accuracy of the light-emitting layer is within ±1〇μηι. Example 5 The opening portion of the longitudinal 2 7 0 μηι, horizontal 1 0 0 μηη, will be arranged in the vertical and horizontal 3 0 0 μη spacing The mask member having a full area (more than 90%) and a shape of 200x214 mm is fixed on the same frame as that of Embodiment 4. In addition, because of the ratio Since the area is slightly larger, a mask member having a shape of 1 62 x 200 mm outside the opening of the four positions is disposed directly under the evaporation source side of the steaming mask, and is fixed to the inside of the frame. The members are not connected to each other. The vapor deposition mask for the light-emitting layer shown in Fig. 7 is provided in this manner, and an organic electric field light-emitting device similar to that of the first embodiment is produced. In the electric field light-emitting device, good display characteristics can be obtained. When the illuminating pixels are observed by a microscope, it is confirmed that the adjacent pixels do not mix colors, and the light-emitting region can be formed to have a good luminescent layer pattern. The area of the organic compound for the light-emitting layer that is not used is arranged to be three on each of the upper and lower sides, and a part of the -28-1358240 has a half-way shape. The pattern of the luminescent layer is made within ±7 μπι. By integrally arranging the opening portion in the steaming mask active area, since the flexing of the mask can be reduced, the patterning accuracy can be further improved. Example 6 The luminescent layer was formed by using a vapor deposition mask at an interval of 300 μπι in the vertical and horizontal directions, and the openings in the longitudinal direction of 27 μm and the lateral direction of 100 μm were arranged in a vapor masking active area (90% or more) and formed into a shape of 200×2 1 4 mm. The mask member is attached to a frame made of ultra-low expansion steel to which a cross frame is added. At this time, the part of the cross frame is also followed by the steaming mask. In this manner, an evaporation mask for the light-emitting layer shown in Fig. 11 is provided. Alternatively, an organic electric field light-emitting device similar to that of the fourth embodiment can be produced. By adding a cross frame to the frame, the vapor-emitting mask is used to form a light-emitting layer pattern slightly larger than the light-emitting region on the four surfaces. The line sequential driving of the organic electric field light-emitting device can obtain good display characteristics. Further, when the illuminating pixels are observed by a microscope, it is confirmed that a light-emitting region is not mixed with the adjacent pixels, and a good luminescent layer pattern can be formed covering the entire luminescent region. Further, in the structure of the pixel, the area of the organic compound for the light-emitting layer which is not used is arranged in three of each of the upper and lower sides, and some of them are in the middle half-end shape. The pattern of the luminescent layer is made within ± 5 μπι. Since the deformation of the frame is reduced by the addition of the cross frame, the accuracy of pattern creation can be further improved. Comparative Example 1 An organic electroluminescence luminaire -29 to 1358240 similar to that of Example 1 was produced except that the opening portion of the luminescent layer was 200 in the vertical direction and 272 in the lateral direction. In other words, the vapor-emitting mask for the light-emitting layer does not have a dummy opening, and the superimposed light-emitting region of the first electrode and the second electrode is formed, and the simple opening-type color organic layer corresponding to the effective opening region of the vapor-emitting mask for the light-emitting layer is formed. Electric field illuminating device. The organic electric field light-emitting device is driven in line order, and it is confirmed that the pixels adjacent to the periphery of the light-emitting region are mixed. That is, the occurrence of burn-in at the boundary portion of the mask member and the boundary portion of the open region is disadvantageous for the adhesion of the substrate and the vapor mask. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a plan view showing an example of a pixel set. Fig. 2 is a schematic oblique view of a portion of the structure for illustrating an example of the construction of an organic electric field illuminating device. Figures 3(a) and (b) are schematic views showing an example of a steamed mask, wherein the third (a) is a plan view and the third (b) is a cross-sectional view. 4(a), (b), and (c) are schematic views of an example of a steaming mask, wherein one of the steaming masks of the reinforcing line is not introduced in the fourth (a) drawing. Example 'Fig. 4(b) is an example of an evaporation mask into which a reinforcing line is introduced, and Fig. 4(c) is an example of an evaporation mask into which a reinforcing line is introduced. Figure 5 is a schematic diagram illustrating the mask evaporation method. Figure 6(a) and (b) are schematic diagrams of a conforming vaporized mask (1 chamfered steamed mask) and its steaming pattern. [6th (a) is used to illustrate the steaming mask. The structure is shown in Fig. 6(b) to illustrate the steaming pattern. Figure 7(a) '(b) is a conforming steaming mask (4 chamfered steamed mask) and its steaming pattern. Figure 7(a) is used to illustrate steaming The cover 1358240 construction 'Fig. 7(b) is used to illustrate its steaming_ case. Figure 8 is a plan view showing an example of an evaporation mask having a virtual opening. Figure 9 is a plan view showing the steaming of the virtual opening around the effective opening P region in such a manner that the outermost peripheral portion of the opening region (including the effective opening and the virtual opening) does not have a straight portion of 1 mm or more. An instance of the mask. Fig. 10 is a plan view showing another example of a vapor mask having a virtual opening. Figure 11(a) and (b) are sketches of a steaming mask (with a cross frame and a steamed mask) with a cross frame added to the frame, and a sketch of the steamed pattern, in which the 1st (a) The figure is used to illustrate the structure of the steamed mask, and the 1st (1) figure is used to illustrate the steaming pattern. Figure 12(a) and (b) are sketches of a steamed mask with a cross frame added to the frame (without the cross frame and the steamed mask), and a sketch of the steamed pattern, 12(a) The figure is used to illustrate the structure of the steamed mask, and the 12th (b) figure is used to illustrate the steaming pattern. [Description of main component symbols] 1 Substrate 2 First electrode 3 Insulation layer 4 Common organic layer 5 Light-emitting layer 6 Second electrode -31- 1358240 7 Mask area 8 Mask frame 9 Opening □ Area 10 Opening □ Part 11 Reinforcing line 12 Steaming source 13 Effective opening □ Field 14 Virtual opening □ 15 Circular virtual opening □ 16 Striped pattern forming without steaming line Steaming mask 17 Introducing a steaming mask with one reinforcing line 18 Introduction 3 Steaming mask for root reinforcement line 19 Red illuminating pixel 20 Green illuminating pixel 2 1 Blue illuminating pixel 22 Pixel set. Combination 2 3 Adding cross frame to frame 2 4 Base y, ', with mask-32-