KR101070539B1 - Deposition mask and manufacturing method of organic electroluminescent device using the same - Google Patents

Deposition mask and manufacturing method of organic electroluminescent device using the same Download PDF

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KR101070539B1
KR101070539B1 KR1020077007880A KR20077007880A KR101070539B1 KR 101070539 B1 KR101070539 B1 KR 101070539B1 KR 1020077007880 A KR1020077007880 A KR 1020077007880A KR 20077007880 A KR20077007880 A KR 20077007880A KR 101070539 B1 KR101070539 B1 KR 101070539B1
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light emitting
opening
mask
emitting layer
area
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KR1020077007880A
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KR20070101842A (en
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타케시 아라이
시게오 후지모리
타케시 이케다
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도레이 카부시키가이샤
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Abstract

The present invention provides a high-precision organic electroluminescent device and at the same time provides a method of manufacturing an organic electroluminescent device that is capable of patterning a high-precision light emitting layer. An object of the present invention is to provide a deposition mask for use in patterning. The above object is to form a light emitting pixel around an opening (effective opening) for forming a light emitting layer used for a light emitting pixel when the light emitting layer is deposited, and a region (effective opening region) partitioned by the outer edge of the effective opening group. It can achieve by vapor-depositing a light emitting layer using the vapor deposition mask characterized by including the mask member which has an unused opening (dummy opening).
Organic electroluminescent device, light emitting layer, deposition mask, opening, mask member

Description

Deposition mask and manufacturing method of organic electroluminescent device using the same {DEPOSITION MASK AND MANUFACTURING METHOD OF ORGANIC ELECTROLUMINESCENT DEVICE USING THE SAME}

The present invention relates to an organic electroluminescent device having a pixel pattern including a light emitting layer containing an organic compound formed by a mask deposition method, and a manufacturing method thereof.

The organic electroluminescent device emits light by recombination of holes injected from an anode and electrons injected from a cathode in an organic light emitting layer sandwiched between two poles. As shown in FIG. 2, the representative structure is a stack of a first electrode 2 formed on a substrate 1, a thin film layer including a light emitting layer 5 containing at least an organic compound, and a second electrode 6. The light emitted by the drive is taken out from the transparent electrode side. In such an organic electroluminescent device, high luminance light emission under thin type and low voltage driving or multi-color light emission by selecting an organic compound of the light emitting layer is possible, and thus it is applied to a light emitting device or a display.

Patterning a light emitting layer etc. is necessary for manufacture of an organic electroluminescent device, and the manufacturing method has been examined variously. When fine patterning is required, the photolithography method is used as a typical technique. Although the photolithography method can be applied to the formation of the first electrode of the organic electroluminescent device, it is difficult to apply the photolithography method to the formation of the light emitting layer or the second electrode because the photolithography method is basically a wet process. There are many cases. Therefore, a dry process such as vacuum deposition, sputtering, chemical vapor deposition (CVD) or the like is applied to the formation of the light emitting layer or the second electrode. In such a process, a mask deposition method using a deposition mask is often applied as a means for patterning a thin film.

The pattern precision of the light emitting layer of the organic electroluminescent device utilized as a display is considerably high. In the simple matrix method, the light emitting layer is formed on the first electrode patterned in a stripe pattern. The line width of the first electrode is usually 100 m or less, and the pitch is about 100 m. In addition, the second electrode is also formed to have a hundreds of micrometers pitch in a stripe shape so as to intersect with the first electrode, the elongated electrode has a low electrical resistance, and the electrodes adjacent in the width direction are completely insulated. It is necessary. Even in the active matrix system, the light emitting layer is patterned with the same or higher accuracy.

Therefore, the deposition mask used for patterning the light emitting layer also needs to be highly accurate. Examples of the method for producing the mask member include an etching method, mechanical polishing, sand blasting method, sintering method, laser processing method, photosensitive resin, and the like, but an etching method and an electroforming method excellent in fine pattern processing accuracy are often used.

In addition, when the mask member is thick, shadowing occurs due to the deposition angle, and dullness of the pattern occurs. Therefore, as the demand for precision increases, the thickness of the mask member needs to be made thinner. The thickness of the mask member for a light emitting layer is a thin film of 100 micrometers or less normally, and is generally fixed to a frame on a window frame, and is used for a vapor deposition process.

In the mask member portion of the deposition mask used for forming the light emitting layer, an opening region 9 partitioned by an outer edge of the opening 10 arranged for pattern formation with the mask region 7 on the base material is provided. Present (FIG. 3). At this time, there existed a problem that an in-plane stress difference generate | occur | produced between a mask area | region and an opening area | region, according to the manufacturing conditions of a mask, and the curvature locally generate | occur | produces in the boundary part (dotted line part of FIG. 3 (a)). When such a deposition mask is used, the adhesion between the substrate and the deposition mask is impaired at the boundary between the mask region and the opening region where the warpage occurs, blurring of the light emitting layer pattern, etc. occurs, and in particular, the pixel having each light emitting pixel as one unit. When the pitch of an aggregation is 500 micrometers or less, the color mixture with adjacent light emission pixels tends to generate | occur | produce, and high precision light emission is not obtained. This problem arises from the property of bending at the boundary between the mask area and the opening area, and the longer the boundary is, the more likely it is to occur, and its influence is also increased. In other words, the larger the screen size, the longer the vertical and horizontal sides, the more prominent.

In response to this problem, the reinforcement line 11 is partially introduced for the purpose of maintaining the pattern processing accuracy as shown in FIG. 4 by applying tension to the mask member and fixing it for the purpose of suppressing the deflection and bending of the mask member. It is known to use one (see Patent Document 1, for example), but it does not suppress local warpage. Moreover, as a vapor deposition mask for patterning a 2nd electrode, the means which divides a mask member and reduces the tension applied is disclosed (for example, refer patent document 2), but it is sufficient for the patterning of a more precise light emitting layer. I could not say. In addition, the introduction position of the reinforcement line is a position overlapping with the insulating layer so as not to affect the light emission. Thus, the light emitting layer pattern in the case of using the deposition mask in which the reinforcement line is introduced is, for example, in the longitudinal stripe shape or in the transverse direction. In the alternate pattern of each color, the pitch in the longitudinal direction is the smallest and is the same as the light emitting pixel or an integer multiple of the light emitting pixel, and the pitch in the horizontal direction is an integer multiple of the light emitting pixel.

In addition, although the productivity is increased by adhering a mask member to a frame having n openings as the multi-sided light emitting deposition mask (see Patent Document 3, for example), it is effective in suppressing local bending of the mask member. There was no.

As another multi-emission deposition mask, a deposition mask in which a stripe-shaped first mask member and a second mask member for regulating the deposition range are overlapped is known (see Patent Document 4, for example). It has not been solved the problem of the present invention that the influence of the normal bending does not reach the light emitting region. In addition, since the stripe-shaped mask member and the two mask members of the second mask member need to be aligned with respect to the deposited object, they are disadvantageous in terms of productivity, and shadowing caused by the second mask member is also disadvantageous. There is a risk of defective products, which increases the risk of defective products.

Patent Document 1: Japanese Patent Application Laid-Open No. 2000-160323

Patent Document 2: Japanese Patent Application Laid-Open No. 2000-12238

Patent Document 3: Japanese Patent Laid-Open No. 2003-152114

Patent Document 4: Japanese Patent Application Laid-Open No. 2003-68454

An object of the present invention is to provide a method of manufacturing an organic electroluminescent device which forms a light emitting layer so that the influence of the bending of the mask member does not appear in the light emitting pixel portion, and covers the entire light emitting region.

In order to solve the said subject, this invention has the following structures. In other words,

A. For forming light emitting pixels around an opening for forming a light emitting layer used for light emitting pixels (hereinafter referred to as an effective opening) and a region partitioned by the outer edge of the effective opening group (hereinafter referred to as an effective opening region). A deposition mask for use in depositing a light emitting layer of an organic electroluminescent device, comprising a mask member having an unused opening (hereinafter referred to as a dummy opening),

B. A method of manufacturing an organic electroluminescent device having light emitting pixels of two or more colors, wherein a deposition mask according to item A or the improvement thereof is brought into contact with or near the deposition material for at least one color pixel. And forming a light emitting layer by depositing a light emitting organic compound through the mask.

C. An organic electroluminescent device in which two or more light emitting pixels in which a thin film layer including a light emitting layer containing an organic compound is sandwiched between a first electrode and a second electrode are arranged at a predetermined pitch on a substrate, and the light emitting layer is It has a stripe pattern, and the light emitting pixels are arranged in a pattern of alternating colors in one direction, and in the same color in a direction orthogonal thereto, and an area in which the pixels are arranged (hereinafter referred to as a light emitting area). ) Is an organic electroluminescent device characterized in that at least one pattern containing the same organic compound as the organic compound used for forming the light emitting layer but not used as a light emitting pixel is formed.

Effect of the Invention

According to the present invention, it is possible to form a pattern of a high-definition light emitting layer over the entire region, and to obtain an organic electroluminescent device having a good display quality.

1 is a plan view illustrating an example of a pixel set.

2 is a schematic perspective view in which some of the configurations for explaining an example of an organic electroluminescent device structure are cut out.

3 is a schematic view showing an example of a deposition mask, (a) is a plan view, and (b) is a sectional view.

4 is a schematic perspective view showing an example of a deposition mask, (a) is an example of a deposition mask without a reinforcement line, (b) is an example of a deposition mask with a reinforcement line, and (c) is a reinforcement line. It is another example of one deposition mask.

It is a schematic diagram explaining the mask vapor deposition method.

6 is a schematic diagram of a bonded deposition mask (one-sided light emission deposition mask) and its deposition pattern, (a) illustrates the configuration of the deposition mask, and (b) illustrates the deposition pattern accordingly.

FIG. 7 is a schematic diagram of a bonded deposition mask (four-sided emission deposition mask) and its deposition pattern, (a) illustrates the structure of the deposition mask, and (b) illustrates the deposition pattern accordingly.

8 is a plan view illustrating an example of a deposition mask having a dummy opening.

FIG. 9 is a plan view illustrating an example of a deposition mask in which a dummy opening is disposed around the effective opening region so that the outermost portion of the opening region (including the effective opening and the dummy opening) has no straight portion of 10 mm or more.

10 is a plan view showing another example of a deposition mask having a dummy opening.

FIG. 11 is a schematic diagram of a deposition mask (with adhesion of a flesh and a deposition mask) in which a flesh is added to a frame and a deposition pattern thereof, (a) illustrates a structure of a deposition mask, and (b) illustrates a deposition pattern accordingly do.

12 is a schematic diagram of a deposition mask (without adhesion of a flesh and a deposition mask) with flesh added to a frame and a deposition pattern thereof, (a) illustrates a structure of a deposition mask, and (b) illustrates a deposition pattern accordingly. do.

<Description of the code>

1: substrate 2: first electrode

3: insulation layer 4: common organic layer

5: light emitting layer 6: second electrode

7: mask area 8: mask frame

9: opening area 10: opening

11: reinforcement line 12: deposition source

13: effective opening area 14: dummy opening

15: circular pile opening

16: Deposition mask for forming stripe pattern without reinforcement

17: Deposition mask with one reinforcement line

18: Deposition Mask with Three Reinforcement Lines

19: red light emitting pixel 20: green light emitting pixel

21: blue light emitting pixel 22: pixel set

23: flesh added to frame 24: deposition mask

Best Mode for Carrying Out the Invention

The organic electroluminescent device of the present invention may be a simple matrix type, an active matrix type, or a display format, as long as it is an organic electroluminescent device in which two or more light emitting pixels are arranged at a predetermined pitch. In particular, a light emitting pixel having an emission peak wavelength in each of the red, green, and blue regions is called a full color display. In general, a peak wavelength of light in the red region is 560 to 700 nm, a green region is 500 to 560 nm, and a blue region. Is in the range of 420 to 500 nm.

The range called a light emitting pixel is a part which emits light by energization. That is, when the insulating layer is formed on the part in which both the 1st electrode arrange | positioned and the 2nd electrode opposingly exist in the thickness direction, and the 1st electrode, it is the range regulated accordingly. In a simple matrix display, since the first electrode and the second electrode are formed in a stripe shape, and the intersecting portion is used as the light emitting pixel, the light emitting pixel is often rectangular. In an active matrix display, switching means may be formed in the vicinity of the light emitting pixels, and in this case, the shape of the light emitting pixels is not a rectangle but is often a partially cut rectangle. However, in the present invention, the shape of the light emitting pixel is not limited to these, and may be, for example, circular, or may be any shape by controlling the shape of the insulating layer.

In the organic electroluminescent device of the present invention, a light emitting layer is formed by a mask deposition method. In the mask deposition method, as shown in FIG. 5, a deposition mask having an opening of a desired pattern is disposed on the deposition source side of the substrate by depositing the deposition mask in contact with the deposition or by placing the deposition organic compound in the vicinity thereof. Is done. In order to obtain a high-definition deposition pattern, it is important to closely adhere the deposition mask having high flatness to the substrate, and a technique of applying tension to the mask member, a method of adhering the deposition mask to the substrate by a magnet disposed on the back of the substrate, and the like. Is used.

Next, the vapor deposition mask for light emitting layers used for the manufacturing method of this invention is demonstrated. From the high demanded accuracy of the light emitting layer pattern, the deposition mask used in the present invention also needs to be highly accurate. Examples of the method for producing the mask member include an etching method, mechanical polishing, sand blasting method, sintering method, laser processing method, and the use of a photosensitive resin. As thickness of a mask member, it is 100 micrometers or less preferably.

In the mask member of the deposition mask used in the manufacturing method of the present invention, a dummy opening that is not used for forming light emitting pixels around an effective opening for constituting a light emitting pixel and an effective opening region partitioned by the outer edge of the effective opening group. It is characterized by having (Fig. 8). Moreover, in one aspect of the organic electroluminescent device by the manufacturing method of the present invention, a pattern which does not emit light by the same organic compound as the organic compound used for the said light emitting layer is formed in the peripheral part of a light emitting area. By using the vapor deposition mask provided with such a mask member, the influence of the warpage due to the stress difference in the mask member and the like does not reach the effective opening region existing inside the dummy opening, so that the effective opening region is applied to the deposition material with good accuracy. It can be made to adhere, and the pattern of a high-definition light emitting layer can be formed.

In other words, the effective opening region is a region which is in contact with the effective opening existing on the outermost side and is divided by a closed line which is the shortest length including the same.

In addition, as a preferred method of sufficiently obtaining the effect of the present invention, it is preferable to arrange the dummy opening around the effective opening area so as not to have a straight portion of 10 mm or more at the outermost periphery of the opening area (including the effective opening and the dummy opening). (See Figure 9). This makes it possible to effectively disperse local warpage.

The number, shape and size of the dummy openings are not particularly limited. Although it should just be one or more about the number, one or more each is preferable in the upper, lower, left, and right sides of the effective opening area, and each of three or more is more preferable. The shape may also be rectangular or may be circular. In addition, the size may be larger or smaller than the effective opening. Although the formation of this dummy opening can be processed as a unique shape, since it is easy to manufacture a mask member, it is preferable to provide it in the arrangement of the effective opening pattern and the tuning, for example, m predetermined pitches of the effective opening are longitudinally In the case where n pieces are arranged in the lateral direction, m + 1 or more pieces in the longitudinal direction and / or n + 1 pieces or more are arranged in the transverse direction, that is, portions other than m × n openings are arranged. It is preferable to use as a dummy opening.

In the present invention, a plurality of mask members may be used, and one of the mask members is preferably a mask member having the dummy opening. In the case of using a plurality of mask members, the mask members may be spaced apart or in contact with each other.

Since a mask member is easy to handle, although tension is normally applied and fixed to a frame, a mask member may be used as a vapor deposition mask as it is. In the case of using a frame, the shape thereof is not particularly limited, but various aspects are contemplated.

Hereinafter, a specific example is demonstrated by drawing. As shown in Fig. 6, a mask member (upper mask member) opened in a pattern of a desired light emitting pixel on almost the entire surface of a portion other than a margin portion (hereinafter, referred to as a deposition mask application region) used for fixing to a frame. ) And a mask member (lower mask member) having an opening larger than the light emitting area, an effective opening not masked by the lower mask member and a dummy opening masked by the lower mask member are formed in the upper mask member. A deposition mask can be obtained. At this time, part or all of the dummy opening is partially or completely covered by the lower mask member. In this structure, it is not necessary to necessarily join two mask members, and they may overlap only or may be non-contact. In addition, by using these methods, since the upper mask member has the openings uniformly over the entire surface, in-plane stress differences, distortions, and the like do not occur, and the adhesion accuracy to the frame and furthermore, the patterning accuracy by vapor deposition are improved. In addition, vapor deposition of a light emitting layer is performed by providing the upper mask side to the to-be-deposited member side, Preferably the upper mask is in contact with a to-be-deposited member.

Here, the edge of one of the openings of the lower mask member is preferably outside the region surrounded by the dummy opening of the upper mask member and inside the region surrounded by a distance of 500 μm from the outer edge of the effective opening region. . In this way, the pattern by the dummy opening is not formed, or it exists in the small part of the outer side of the effective opening area (the pattern is formed in an area within 500 μm from the outer edge of the light emitting area when the organic electroluminescent device is used). Post-processing property becomes favorable without causing an oscillation in post-processing, or a cause of adhesion defects, such as wiring. In addition, the shadowing caused by the thickness of the lower mask member can be reduced or eliminated.

In addition, the area enclosed by the dummy opening is another area | region which, in other words, contacts the dummy opening adjacent to an effective opening area, and is divided by the closed line which becomes shortest and does not contain this (however, each part of an effective opening area | region) If no dummy opening exists, the dummy opening virtually closest to the angle is assumed to exist at that angle while maintaining the same distance with respect to the effective opening area.

In addition, using these methods, it is also easy to manufacture a deposition mask corresponding to multiple light emission as shown in Figs. 12, when the mask member is combined with the frame, the mask member may not necessarily be fixed to the flesh portion of the frame.

In the example of FIGS. 6 and 7, the mask members may be fixed to the frame after overlapping both mask members. However, in order to perform patterning with higher precision, the upper mask member having a fine pattern facing the substrate is fixed to the upper surface of the frame, It is preferable that the lower mask member defining the deposition region is fixed to the inside of the frame such that unnecessary force is not applied to the upper mask member.

In addition, when partially or completely covering a part or all part of a dummy opening with a frame, it is preferable to design in the same way as when covering a dummy opening with the lower mask member mentioned above.

In order to obtain good pattern accuracy, it is preferable to use 90% or more of the vapor deposition mask application area as the mask member, and preferably 95% or more of the area opened by the effective opening and the dummy opening. In addition, the ratio (hereinafter referred to as aperture ratio) of the average area of the effective openings (the area of the effective openings / the number of the effective openings) and the average area of the dummy openings (the area of the dummy openings / the number of the dummy openings) is 50 to 200. It is preferable to exist in% of range, and it is more preferable that it is 80 to 125%. By providing an opening as wide as possible in the deposition mask application area and bringing the opening ratio close to 100%, it is easy to calculate the elasticity when applying tension to the mask member, thereby maintaining shape retention, fixing accuracy to the frame, and furthermore. Patterning precision is improved.

In the deposition masks illustrated in FIGS. 6 and 7, a part of the dummy opening is covered and hidden by a separate mask member (lower mask member). Since the lower mask member simply defines the light emitting area, it does not require positional accuracy at the pixel level, which is advantageous. That is, even when a part of the dummy opening is covered and hidden, and a part is not hidden, the pattern by the dummy opening does not constitute a light emitting pixel, so that no problem occurs.

Hereinafter, although the specific example of the manufacturing method of an organic electroluminescent device is shown, this invention is not limited to this.

The photolithographic method is applied to a transparent substrate on which a transparent electrode film such as indium tin oxide (ITO) is formed to form a plurality of first stripe-shaped electrodes arranged at regular intervals.

The organic electroluminescent device of the present invention may have an insulating layer formed to cover a portion of the first electrode. Various inorganic and organic materials are used as the material of the insulating layer, and the inorganic materials include silicon oxides, oxide materials such as manganese oxide, vanadium oxide, titanium oxide and chromium oxide, semiconductor materials such as silicon and gallium arsenide, glass materials and ceramics. Examples of the organic material include polymer materials such as polyvinyl, polyimide, polystyrene, novolac, and silicone. Various well-known formation methods can be applied to formation of an insulating layer.

In the light emitting pixel of the organic electroluminescent device of the present invention, a thin film layer including a light emitting layer containing an organic compound is sandwiched between the first electrode and the second electrode. The structure of the thin film layer is not particularly limited as long as it includes a light emitting layer, but for example, 1) a hole transporting layer / light emitting layer, 2) a hole transporting layer / light emitting layer / electron transporting layer, 3) a light emitting layer / electron transporting layer, and 4) each of the above structures. Any of the aspects which mixed the material used for one part or all part of a layer in one layer may be sufficient.

At least of these light emitting layers require patterning. In the case of a full-color display, three kinds of light emitting layers are sequentially formed using a light emitting material corresponding to three light emitting colors having a light emission peak wavelength in three regions of red (R), green (G), and blue (B). In the present invention, the light emitting layer forms a stripe pattern, wherein the stripe shape includes not only each element of the stripe formed continuously as a straight line, but also an aspect in which discontinuous patterns are arranged in a straight line. In the case of such a discontinuous pattern, a precise pattern can be obtained with good positional accuracy and adhesion. In this case, it is preferable that the pitch of the light emitting layer pattern is the same as or equal to an integer multiple of the pixel pitch.

After formation of the thin film layer, a second electrode is formed. In the simple matrix method, a plurality of stripe-shaped second electrodes arranged at regular intervals are patterned in an arrangement crossing the first electrode on the thin film layer. On the other hand, in the active matrix system, the second electrode is often formed over the entire emission region. Since the second electrode requires a function as a cathode capable of efficiently injecting electrons, many metal materials are used in consideration of the stability of the electrode.

After patterning a 2nd electrode, sealing is performed and the drive circuit is connected and an organic electroluminescent device is obtained. Further, light can be taken out from the upper surface of the pixel by making the first electrode an opaque electrode and making the second electrode transparent. Alternatively, the first electrode may be a cathode and the second electrode may be an anode.

In addition, it is preferable in terms of production cost at the time of mass production because the productivity is improved by processing the n-base (n is an integer of 2 or more) on one substrate and cutting the substrate into n pieces.

Since the organic electroluminescent device of the present invention can pattern the high-definition light emitting layer, the pitch of the pixel set having one unit of light emitting pixels of each color as one unit can be 500 µm or less, preferably 400 µm or less in both sides. have.

Hereinafter, although an Example and a comparative example are given and this invention is demonstrated, this invention is not limited by these examples.

&Lt; Example 1 >

A glass substrate having an ITO (indium tin oxide) transparent electrode film having a thickness of 130 nm was formed on the alkali-free glass surface having a thickness of 1.1 mm by a sputtering method to a size of 120 × 100 mm. The photoresist was apply | coated on the ITO board | substrate, and it patterned by exposure and image development by the normal photolithographic method. After etching unnecessary portions of the ITO, the photoresist was removed to pattern the ITO film into a stripe shape having a length of 90 mm and a width of 80 mu m. This stripe-shaped first electrode is arranged at 816 with a pitch of 100 mu m.

Subsequently, a positive photoresist (OFPR-800 manufactured by Toka Kogyo Co., Ltd.) was applied onto the substrate on which the first electrode was formed by spin coating to have a thickness of 3 μm. The coating film was exposed to a pattern through a photomask, developed, patterned to form photoresist, and developed and cured at 180 ° C. As a result, unnecessary portions of the insulating layer are removed, and 200 insulating layer openings each having a length of 235 µm and a width of 70 µm are formed on the stripe-shaped first electrode at a pitch of 300 µm in the longitudinal direction and 100 µm in the transverse direction. 816 pitches were formed. The cross section of the end part of the insulating layer was a forward taper shape. The board | substrate with which the insulating layer was formed was left to stand for 20 minutes in 80 degreeC and 10Pa of pressure reduction atmospheres, and was dehydrated.

The thin film layer containing a light emitting layer was formed by the vacuum vapor deposition method by resistance wire heating system. In addition, the vacuum degree at the time of vapor deposition is 2x10 <-4> Pa or less, and during vapor deposition, the board | substrate was rotated with respect to the vapor deposition source. First, copper phthalocyanine was deposited at 15 nm and bis (N-ethylcarbazole) at 60 nm for the entire emission region to form a hole transport layer.

As the deposition mask for the light emitting layer, a deposition mask having an opening region in which openings were arranged was used. The outer shape of the mask member is 120 x 84 mm, the thickness is 25 [mu] m, and the opening area of 61.77 mm in length and 100 [mu] m in width has 278 opening regions arranged at a pitch of 300 [mu] m in the transverse direction. Each opening is provided with 205 reinforcing wires having a width of 30 mu m at a pitch of 300 mu m. That is, the number of openings divided by the reinforcement line is 206 in the longitudinal direction, 200 of which are effective openings, and the size of one opening defined by the reinforcing line is 270 μm in length and 100 μm in width. The mask member is fixed by a stainless steel frame having a width of 4 mm having the same appearance.

The vapor deposition mask for light emitting layers was arrange | positioned in front of a board | substrate, and both contact | adhered, and the ferrite planks (Hitachi Kinzo Co., Ltd. make, YBM-1B) were arrange | positioned at the back of a board | substrate. At this time, the insulating layer openings were arranged so as to overlap the effective openings of the deposition mask, and the alignment openings were positioned so that the dummy openings were three each of the top, bottom, left, and right sides of the light emitting region. Since the deposition mask is in contact with the insulating layer having a thick film thickness, the deposition mask is not in contact with the previously formed hole transport layer, thereby preventing mask damage.

8 doped with 0.3% by weight of 1,3,5,7,8-pentamethyl-4,4-difluoro-4-bora-3a, 4a-diaza-s-indacene (PM546) in this state A hydroxyquinoline-aluminum complex (Alq 3 ) was deposited at 21 nm to pattern the green light emitting layer.

Subsequently, 15 nm of Alq 3 doped with 1% by weight of 4- (dicyanomethylene) -2-methyl-6- (uroridylstyryl) pyran (DCJT) was shifted by 1 pitch to the right in a deposition mask to red. The light emitting layer was patterned.

In addition, 4,4'-bis (2,2'-diphenylvinyl) diphenyl (DPVBi) was deposited by 20 nm with the deposition mask shifted 2 pitches to the left to pattern the blue light emitting layer. Each of the light emitting layers of green, red, and blue is disposed every three of the stripe-shaped first electrodes, and completely covers the exposed portions of the first electrodes. In addition, the regions of the organic compound for the light emitting layer, which were not used in the configuration of the pixels, were arranged at the same time, respectively, three at the top and bottom, and nine at the left and the right.

Subsequently, DPVBi was deposited at 35 nm, Alq 3 at 10 nm, and the entire emission region was deposited. Thereafter, the thin film layer was exposed to lithium vapor to be doped (film thickness equivalent 0.5 mm).

As the second electrode patterning, a deposition mask having a structure in which a gap exists between a surface in contact with the substrate of the mask member and the reinforcement line was used. The outer shape of the mask member is 120 × 84 mm, the thickness is 100 μm, and 200 stripe-shaped openings having a length of 100 mm and a width of 250 μm are arranged at a pitch of 300 μm. On the mask member, a mesh-like reinforcement line formed of a regular hexagonal structure having a width of 40 µm, a thickness of 35 µm, and an interval of two opposite sides of 200 µm is formed. The height of the gap is 100 μm, which is equal to the thickness of the mask member. The mask member is fixed by a stainless steel frame having a width of 4 mm having the same appearance.

The second electrode was formed by vacuum deposition by a resistance wire heating method. In addition, the vacuum degree at the time of vapor deposition is 3x10 <-4> Pa or less, and during vapor deposition, the board | substrate was rotated with respect to two vapor deposition sources. Similarly to the patterning of the light emitting layer, a second electrode deposition mask was placed in front of the substrate to bring them into close contact, and a magnet was placed behind the substrate. At this time, both are disposed so that the insulating layer opening overlaps with the effective opening of the deposition mask. In this state, aluminum was deposited to a thickness of 200 nm to pattern the second electrode. The second electrode is patterned in a stripe shape in an arrangement perpendicular to the first electrode.

This board | substrate was taken out from the vapor deposition machine, and hold | maintained for 20 minutes in pressure reduction atmosphere by a rotary pump, and then transferred to the argon atmosphere of dew point -90 degrees C or less. In this low-humidity atmosphere, the substrate and the sealing glass plate were sealed by bonding using a curable epoxy resin.

In this way, a patterned green light emitting layer, a red light emitting layer and a blue light emitting layer are formed on a first electrode having a width of 80 μm, a pitch of 100 μm, and a number of 816 ITO stripes, and are 250 μm in width and pitch so as to be orthogonal to the first electrode. A simple matrix color organic electroluminescent device in which 200 300 μm stripe-shaped second electrodes were arranged was manufactured. Since one light emitting pixel each of red, green, and blue, that is, a total of three forms a pixel set, the present light emitting device has a set of 272 x 200 pixels at a pitch of 300 mu m.

When the present organic electroluminescent device was driven sequentially, good display characteristics could be obtained. Moreover, when the light emitting pixel was observed with the microscope, it was confirmed that there is no mixing color to the adjacent pixel, and the favorable light emitting layer pattern was formed over the whole light emitting area.

<Example 2>

The effective openings of the vapor deposition mask for the light emitting layer were 200 vertically and 272 horizontally, except that the circular dummy openings having a diameter of 200 μm were arranged at a pitch of 400 μm over 3 mm of the effective opening area as shown in FIG. 10. In the same manner as in 1, an organic electroluminescent device was manufactured.

When the present organic electroluminescent device was driven sequentially, good display characteristics could be obtained. Moreover, when the light emitting pixel was observed with the microscope, it was confirmed that there is no mixing color to the adjacent pixel, and the favorable light emitting layer pattern was formed over the whole light emitting area.

<Example 3>

The glass substrate in which the ITO transparent electrode film of 130 nm in thickness was formed on the alkali-free glass surface of thickness 1.1 mm by the sputtering method was cut | disconnected to the magnitude | size of 120 * 100 mm. The photoresist was apply | coated on the ITO board | substrate, and it patterned by exposure and image development by the normal photolithographic method. After etching unnecessary portions of the ITO, the photoresist was removed to pattern the ITO film into a stripe shape having a length of 90 mm and a width of 160 mu m. This stripe-shaped first electrode is disposed at 408 at a pitch of 200 mu m.

Subsequently, a positive photoresist (OFPR-800 manufactured by Toka Kogyo Co., Ltd.) was applied onto the substrate on which the first electrode was formed by spin coating to have a thickness of 3 μm. The coating film was exposed to a pattern through a photomask, developed, patterned to form photoresist, and developed and cured at 180 ° C. As a result, unnecessary portions of the insulating layer are removed, and 100 insulating layer openings having a length of 470 μm and a width of 140 μm are formed on the stripe-shaped first electrode at a pitch of 600 μm in the longitudinal direction and 200 μm in the transverse direction. 408 pieces were formed in pitch. The cross section of the end part of the insulating layer was a forward taper shape. The board | substrate with which the insulating layer was formed was left to stand for 20 minutes in 80 degreeC and 10Pa of pressure reduction atmospheres, and was dehydrated.

The thin film layer containing a light emitting layer was formed by the vacuum vapor deposition method by resistance wire heating system. In addition, the vacuum degree at the time of vapor deposition is 2x10 <-4> Pa or less, and during vapor deposition, the board | substrate was rotated with respect to the vapor deposition source. First, copper phthalocyanine was deposited at 15 nm and bis (N-ethylcarbazole) at 60 nm for the entire emission region to form a hole transport layer.

As the light emitting layer patterning, a deposition mask having an opening region in which openings were arranged was used. The outer shape of the mask member is 120 × 84 mm, the thickness is 25 μm, and has an opening area in which 142 arrays of 63.54 mm in length and 200 μm in width are arranged at a pitch of 600 μm in the transverse direction. Each of the openings is provided with 105 reinforcing wires having a width of 60 µm with a pitch of 600 µm. That is, the number of the openings divided by the reinforcing line is 106 in the longitudinal direction, 100 of which are effective openings, and the size of one of the openings divided by the reinforcing line is 540 μm in length and 200 μm in width. The mask member is fixed by a stainless steel frame having a width of 4 mm having the same appearance.

The vapor deposition mask for light emitting layers was arrange | positioned in front of a board | substrate, and both contact | adhered, and the ferrite planks (Hitachi Kinzo Co., Ltd. make, YBM-1B) were arrange | positioned at the back of a board | substrate. At this time, the insulating layer openings were arranged so as to overlap the effective openings of the deposition mask, and the alignment openings were positioned so that the dummy openings were three each of the top, bottom, left, and right sides of the light emitting region. Since the deposition mask is in contact with the insulating layer having a thick film thickness, the deposition mask is not in contact with the previously formed hole transport layer, thereby preventing mask damage.

8 doped with 0.3% by weight of 1,3,5,7,8-pentamethyl-4,4-difluoro-4-bora-3a, 4a-diaza-s-indacene (PM546) in this state A hydroxyquinoline-aluminum complex (Alq 3 ) was deposited at 21 nm to pattern the green light emitting layer.

Subsequently, 15 nm of Alq 3 doped with 1% by weight of 4- (dicyanomethylene) -2-methyl-6- (uroridylstyryl) pyran (DCJT) was shifted by 1 pitch to the right in a deposition mask to red. The light emitting layer was patterned.

In addition, 4,4'-bis (2,2'-diphenylvinyl) diphenyl (DPVBi) was deposited by 20 nm with the deposition mask shifted 2 pitches to the left to pattern the blue light emitting layer. Each of the light emitting layers of green, red, and blue is disposed every three of the stripe-shaped first electrodes, and completely covers the exposed portions of the first electrodes. In addition, the regions of the organic compound for the light emitting layer, which were not used in the configuration of the pixels, were arranged at the same time, respectively, three at the top and bottom, and nine at the left and the right.

Subsequently, DPVBi was deposited at 35 nm, Alq 3 at 10 nm, and the entire emission region was deposited. Thereafter, the thin film layer was exposed to lithium vapor to be doped (film thickness equivalent 0.5 mm).

As the second electrode patterning, a deposition mask having a structure in which a gap exists between a surface in contact with the substrate of the mask member and the reinforcement line was used. The outer shape of the mask member is 120 × 84 mm, the thickness is 100 μm, and 100 stripe-shaped openings having a length of 100 mm and a width of 500 μm are arranged at a pitch of 600 μm. On the mask member, a mesh-like reinforcement line formed of a regular hexagonal structure having a width of 40 µm, a thickness of 35 µm, and an interval of two opposite sides of 200 µm is formed. The height of the gap is 100 μm, which is equal to the thickness of the mask member. The mask member is fixed by a stainless steel frame having a width of 4 mm having the same appearance.

The second electrode was formed by vacuum deposition by a resistance wire heating method. Moreover, the vacuum degree at the time of vapor deposition is 3x10 <-4> Pa or less, and during vapor deposition, the board | substrate was rotated with respect to two vapor deposition sources. Similarly to the patterning of the light emitting layer, a second electrode deposition mask was placed in front of the substrate to bring them into close contact, and a magnet was placed behind the substrate. At this time, both are disposed so that the insulating layer opening overlaps with the opening of the deposition mask. In this state, aluminum was deposited to a thickness of 200 nm to pattern the second electrode. The second electrode is patterned in a stripe shape in an arrangement perpendicular to the first electrode.

The substrate was taken out from the vapor deposition machine, held for 20 minutes in a reduced pressure atmosphere by a rotary pump, and then transferred to an argon atmosphere having a dew point of −90 ° C. or lower. In this low-humidity atmosphere, the substrate and the sealing glass plate were sealed by bonding using a curable epoxy resin.

In this manner, a patterned green light emitting layer, a red light emitting layer, and a blue light emitting layer are formed on a first electrode having a width of 160 μm, a pitch of 200 μm, and a number of 408 ITO stripe, and have a width of 500 μm and a pitch so as to be orthogonal to the first electrode. A simple matrix type color organic electroluminescent device in which 100 600 μm stripe-shaped second electrodes were arranged was manufactured. Since each one of red, green, and blue, that is, three light emitting pixels in total forms one pixel set, the present light emitting device has a set of 136 x 100 pixels at a pitch of 600 mu m.

When the present organic electroluminescent device was driven sequentially, good display characteristics could be obtained. Moreover, when the light emitting pixel was observed with the microscope, it confirmed that the edge part of the light emitting pixel was blurred in the outer peripheral part of the light emitting area. This is because the adhesion between the substrate and the deposition mask has been impaired, but it has not been mixed.

<Example 4>

A 130 nm-thick ITO transparent electrode film was formed by sputtering on the surface of the alkali free glass of 500 * 400 mm and thickness 0.7mm. The photoresist was apply | coated on the ITO board | substrate, and it patterned by exposure and image development by the normal photolithographic method. After etching unnecessary portions of the ITO, the photoresist was removed to pattern the ITO film into a stripe shape having a length of 90 mm and a width of 80 mu m. A 16-diagonal 4-inch light emitting region in which 816 first electrodes were arranged at a pitch of 100 mu m was formed, and a four-sided light emitting ITO substrate was produced by four-dividing the glass into a size of 200 x 214 mm.

Subsequently, a positive photoresist (OFPR-800, manufactured by Tokyo Kogyo Co., Ltd.) was applied so as to have a thickness of 2 μm on the substrate on which the first electrode was formed by the spin coating method. Thereafter, the product was temporarily cured at 120 ° C and subjected to pattern exposure through a photomask. Furthermore, it developed and patterned the photoresist and hardened at 230 degreeC after image development. As a result, unnecessary portions of the insulating layer are removed, and 200 insulating layer openings each having a length of 235 µm and a width of 70 µm are formed on the stripe-shaped first electrode at a pitch of 300 µm in the longitudinal direction and 100 µm in the transverse direction. 816 pitches were formed. The cross section of the end part of the insulating layer was a forward taper shape. The board | substrate with which the insulating layer was formed was left to stand for 20 minutes in 80 degreeC and 10Pa of pressure reduction atmospheres, and was dehydrated.

The thin film layer containing a light emitting layer was formed by the vacuum vapor deposition method by resistance wire heating system. In addition, the vacuum degree at the time of vapor deposition is 2x10 <-4> Pa or less, and during vapor deposition, the board | substrate was rotated with respect to the vapor deposition source. First, copper phthalocyanine was deposited at 15 nm and bis (N-ethylcarbazole) at 60 nm for the entire emission region to form a hole transport layer.

As the deposition mask for the light emitting layer, a deposition mask having four opening regions in which openings were arranged was used. The outer shape of the mask member is 200 × 214 mm, the thickness is 25 μm, and has four opening regions in which 278 arrays having a length of 61.77 mm and a width of 100 μm are arranged at a pitch of 300 μm in the transverse direction. It was arrange | positioned in the position corresponding to the ITO pattern of the 4-sided light emitting ITO board | substrate which was manufactured previously. Each opening is provided with 205 reinforcing wires having a width of 30 mu m at a pitch of 300 mu m. That is, the number of openings of one opening area partitioned by reinforcement lines is 206 in the longitudinal direction, 200 of which are effective openings, and the size of the openings partitioned by reinforcement lines is 270 µm long and 100 µm wide. The mask member is fixed by a super Invar steel frame having an opening of 163 × 201 mm, and the deposition mask application area is 163 × 201 mm.

The vapor deposition mask for light emitting layers was arrange | positioned in front of a board | substrate, and both contact | adhered, and the ferrite planks (Hitachi Kinzo Co., Ltd. make, YBM-1B) were arrange | positioned at the back of a board | substrate. At this time, the insulating layer openings were arranged so as to overlap the effective openings of the deposition mask, and the alignment openings were positioned so that the dummy openings were three each of the top, bottom, left, and right sides of the light emitting region. Since the deposition mask is in contact with the insulating layer having a thick film thickness, the deposition mask is not in contact with the previously formed hole transport layer, thereby preventing mask damage.

8 doped with 0.3% by weight of 1,3,5,7,8-pentamethyl-4,4-difluoro-4-bora-3a, 4a-diaza-s-indacene (PM546) in this state A hydroxyquinoline-aluminum complex (Alq 3 ) was deposited at 21 nm to pattern the green light emitting layer.

Subsequently, 15 nm of Alq 3 doped with 1% by weight of 4- (dicyanomethylene) -2-methyl-6- (uroridylstyryl) pyran (DCJT) was shifted by 1 pitch to the right in a deposition mask to red. The light emitting layer was patterned.

In addition, 4,4'-bis (2,2'-diphenylvinyl) diphenyl (DPVBi) was deposited by 20 nm with the deposition mask shifted 2 pitches to the left to pattern the blue light emitting layer. Each of the light emitting layers of green, red, and blue is disposed every three of the stripe-shaped first electrodes, and completely covers the exposed portions of the first electrodes. In addition, the regions of the organic compound for the light emitting layer, which were not used in the configuration of the pixels, were arranged at the same time, respectively, three at the top and bottom, and nine at the left and the right.

Subsequently, DPVBi was deposited at 35 nm, Alq 3 at 10 nm and over the entire emission area. Thereafter, the thin film layer was exposed to lithium vapor to be doped (film thickness equivalent 0.5 mm).

As the second electrode patterning, a deposition mask having a structure in which a gap exists between a surface in contact with the substrate of the mask member and the reinforcement line was used. The outer shape of the mask member is 200 × 214 mm, the thickness is 100 μm, and four regions in which 200 stripe-shaped openings having a length of 100 mm and a width of 250 μm are arranged at a pitch of 300 μm are arranged at positions corresponding to the ITO substrate. . On the mask member, a mesh-like reinforcement line formed of a regular hexagonal structure having a width of 40 µm, a thickness of 35 µm, and an interval of two opposite sides of 200 µm is formed. The height of the gap is 100 μm, which is equal to the thickness of the mask member. The mask member is fixed by a super Invar steel frame having an opening of 163 × 201 mm, and the deposition mask application area is 163 × 201 mm.

The second electrode was formed by vacuum deposition by a resistance wire heating method. In addition, the vacuum degree at the time of vapor deposition is 3x10 <-4> Pa or less, and during vapor deposition, the board | substrate was rotated with respect to two vapor deposition sources. Similarly to the patterning of the light emitting layer, a second electrode deposition mask was placed in front of the substrate to bring them into close contact, and a magnet was placed behind the substrate. At this time, both are disposed so that the insulating layer opening overlaps with the effective opening of the deposition mask. In this state, aluminum was deposited to a thickness of 300 nm to pattern the second electrode. The second electrode is patterned in a stripe shape in an arrangement perpendicular to the first electrode.

The substrate was taken out from the vapor deposition machine, held for 20 minutes in a reduced pressure atmosphere by a rotary pump, and then transferred to an argon atmosphere having a dew point of −90 ° C. or lower. In this low-humidity atmosphere, the substrate and the sealing glass plate were sealed by bonding using a curable epoxy resin.

In this way, a patterned green light emitting layer, a red light emitting layer and a blue light emitting layer are formed on a first electrode having a width of 80 μm, a pitch of 100 μm, and a number of 816 ITO stripes, and are 250 μm in width and pitch so as to be orthogonal to the first electrode. Four organic electroluminescent devices in which 200 300 µm second stripe electrodes were arranged were mounted. The glass substrate and the sealing glass plate were divided into four sections to obtain a 4-inch diagonal simple matrix color organic electroluminescent device. Since each one of red, green, and blue, i.e., three light emitting pixels form one pixel set, the present light emitting device has a set of 272 x 200 pixels at a pitch of 300 mu m.

When the present organic electroluminescent device was driven sequentially, good display characteristics could be obtained. Moreover, when the light emitting pixel was observed with the microscope, it was confirmed that there is no mixing color to the adjacent pixel, and the favorable light emitting layer pattern was formed over the whole light emitting area. The patterning accuracy of the light emitting layer was within ± 10 μm.

Example 5

A mask member having an outer shape of 200 × 214 mm having an opening of 270 μm in length and 100 μm in width and arranged on the entire surface (90% or more) of the deposition mask application area at a pitch of 300 μm in width and width was fixed to the same upper surface of the frame as in Example 4. In addition, a mask member having an outer shape of 162 x 200 mm provided with four openings slightly larger than the light emitting area was disposed just below the deposition source side of the deposition mask and fixed inside the frame. The two mask members are not bonded to each other. Thus, the vapor deposition mask for light emitting layers as shown in FIG. 7 was prepared. In the same manner as in Example 1 except for the above, an organic electroluminescent device was manufactured.

When the present organic electroluminescent device was driven sequentially, good display characteristics could be obtained. Moreover, when the light emitting pixel was observed with the microscope, it was confirmed that there is no mixing color to the adjacent pixel, and the favorable light emitting layer pattern was formed over the whole light emitting area. In addition, the area | region of the organic compound for light emitting layers which was not used for the structure of the pixel is arrange | positioned one by three at each of the upper and lower sides, and some of them were half-shaped. The patterning accuracy of the light emitting layer was within ± 7 μm. By arranging the openings in front of the deposition mask application region, the warpage of the mask is reduced, so that the patterning accuracy is further improved.

<Example 6>

As the vapor deposition mask for the light emitting layer, a cross member was formed by using a mask member having an opening of 270 μm in length and 100 μm in width at a pitch of 300 μm in width and length of 200 × 214 mm in an appearance arranged on the entire surface of the deposition mask application area (90% or more). Was bonded to the added super invar steel frame. At this time, the flesh portion was also adhered to the deposition mask. Thus, the light emitting layer deposition mask as shown in FIG. 11 was prepared. Otherwise, an organic electroluminescent device was manufactured in the same manner as in Example 4. By adding crisscrosses to the frame, the light emitting layer pattern by this deposition mask is formed on four sides slightly larger than the light emitting region.

When the present organic electroluminescent device was driven sequentially, good display characteristics could be obtained. Moreover, when the light emitting pixel was observed with the microscope, it was confirmed that there is no mixing color to the adjacent pixel, and the favorable light emitting layer pattern was formed over the whole light emitting area. In addition, in the structure of the pixel, the area | region of the organic compound for light emitting layers which was not used is arrange | positioned one by three at each of the upper and lower sides, and some of them were half-shaped. The patterning accuracy of the light emitting layer was within ± 5 μm. By adding flesh, the deformation of the frame is less, so the patterning accuracy is further improved.

Comparative Example 1

An organic electroluminescent device was manufactured in the same manner as in Example 1 except that the openings of the light emitting layer deposition mask were set to 200 vertically and 272 horizontally. That is, a simple matrix type color organic electroluminescent device was produced in which the light emitting layer deposition mask had no dummy opening, and the light emitting region where the first electrode and the second electrode overlap and the effective opening region of the light emitting layer deposition mask coincide with each other.

When the organic electroluminescent device was driven in a linear order, color mixture from the outer peripheral portion of the light emitting region to the adjacent pixels was confirmed. This was because the adhesion between the substrate and the deposition mask was damaged due to the warpage occurring at the boundary between the mask region and the opening region of the mask member.

It is applicable to the production of an organic electroluminescent device, which is one of the flat panel displays requiring high precision.

Claims (9)

  1. Openings for forming the light emitting layer used for the light emitting pixels (hereinafter referred to as effective openings) and openings not used for forming light emitting pixels around the area (hereinafter referred to as an effective opening area) partitioned by the outer edge of the effective opening group (hereinafter referred to as an effective opening area) And a first mask member having a dummy opening, wherein m effective holes are arranged in the longitudinal direction and m in the transverse direction, and m + 1 in the longitudinal direction as a whole of the opening including the dummy opening. An organic electric field, which is arranged as above, or at least n + 1 in the lateral direction, and part or all of the dummy opening is partially or completely covered with a frame holding the second mask member and / or the mask member. A deposition mask used for depositing a light emitting layer of a light emitting device.
  2. 2. The apparatus of claim 1, wherein the second mask member or frame comprises an opening, and an edge of one of the openings is outside of an area surrounded by the dummy opening of the first mask member having the dummy opening, and of the effective opening area. A deposition mask, characterized in that it is inside of an area surrounded by a distance of 500 μm from the outer edge.
  3. The area of the first mask member having the dummy opening is fixed to the frame, and at least 90% of the area other than the portion used for fixing with the frame (the deposition mask utilization area) is effective and the dummy opening. And a ratio (opening ratio) between the average area of the effective openings and the average area of the dummy openings is from 50% to 200%.
  4. A light emitting layer is formed by bringing the deposition mask according to any one of claims 1 to 3 into contact with or near the deposition material with respect to at least one pixel, and depositing a luminescent organic compound through the mask. The manufacturing method of the organic electroluminescent device which has a 2 or more color light emitting pixel including the process.
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