1357672 第096139865號專利申請案補充、修正後無劃線之說明書替換頁 修正日期：100年6月 本發明之另一目的，即在提供一種高發光效率固態發 光元件的製作方法。 本發明之又一目的，亦在提供一種高發光效率固態發 光元件的製作方法。 於是，本發明高發光效率固態發光元件，包含：一具 有呈相反設置的一第一表面及一第二表面的蟲晶層、一形 成於該第一表面的接觸電極、一形成於該第二表面並具導 電性之散熱載座、一夾置於該蟲晶層與該散熱載座之間的 複合式反射鏡（composite reflective mirror)、一夾置於該散 熱載座與該複合式反射鏡之間並提供該磊晶層一内部應力 (built-in stress)的第一應力束缚層（holding layer)，及一包裹 該散熱載座、該第一應力束缚層、該複合式反射鏡的第二 應力束缚層，其中，該散熱載座還具有一取代基板。 另，本發明高發光效率固態發光元件的製作方法，包 含以下步驟： (a) 於一成長基板之蟲晶層上形成一複合式反射鏡； (b) 於該複合式反射鏡上形成一第一應力束缚層以於該 磊晶層内引入一内部應力； (c) 利用一鍵合層（bonding layer)將一形成有背面電極 (back-side metallization)的取代基板鍵合於該第一 應力束缚層； (d) 移除該成長基板並對該磊晶層施予表面粗化處理 (roughen); (e) 於該磊晶層形成平台（mesa)、接觸電極及保護層 10 1357672 第096139865號專利申請案補充、修正後無劃線之說明書替換頁 修正日期：100年6月 (passivation layer); (f) 移除部分的該複合式反射鏡與該第一應力束缚層以 完成第一階段的晶片定義； (g) 轉貼到一電子級膠帶（blue tape)上；及 (h) 分割該鍵合層、取代基板與背面電極以完成第二階 段的晶片定義。 又，本發明另一高發光效率固態發光元件的製作方法 ，包含以下步驟： (A) 於一成長基板之蠢晶層上形成一複合式反射鏡； (B) 形成一晶種層（seed layer)以包覆該蟲晶層與複合式 反射鏡； (C) 於對應該複合式反射鏡之晶種層上依序形成一第一 應力束缚層及一形成一取代基板的散熱層並於該磊 晶層内引入一内部應力； (D) 形成一第二應力束缚層以包覆該取代基板、第一應 力束缚層及晶種層； (E) 形成一包覆該第二應力束縛層且與該第二應力束缚 層互為高選擇钱刻（selective etching)比的結合層； (F) 將該結合層與一暫時基板貼合； (G) 移除該成長基板並對該磊晶層施予表面粗化處理； (H) 於該磊晶層形成平台、接觸電極及保護層； (I) 移除該暫時基板並蝕刻該第二應力束缚層且停止於 該結合層；及 (J) 轉貼到一電子級膠帶上並蝕刻該結合層以完成晶片 11 1357672 第096139865號專利申請案補充、修正後無劃線之說明書替換頁 修正日期：100年6月 定義。 本發明之功效在於，可防止應力的釋放並改善晶圓的 破裂問題，此外’實施濕式蝕刻法來完成晶圓切割製程不 僅經濟效益高’且少掉了因晶片切割（die sawing)或雷射切 割（laser dicing)所致的機械應力、髒污、熱影響區（heat affected zone)等問題。 【實施方式】1357672 Patent Application No. 096,139, 865, the entire disclosure of the specification, and the singularity of the singularity of the singularity of the singularity of the invention. Still another object of the present invention is to provide a method of fabricating a high luminous efficiency solid-state light-emitting element. Therefore, the high luminous efficiency solid-state light-emitting element of the present invention comprises: a crystal layer having a first surface and a second surface disposed oppositely, a contact electrode formed on the first surface, and a second formed on the second surface a heat-conducting heat-conducting surface having a surface, a composite reflective mirror sandwiched between the silicon dioxide layer and the heat-dissipating carrier, and a heat-dissisting carrier and the composite mirror Providing a first stress holding layer of the epitaxial layer with built-in stress, and a first covering the heat dissipating carrier, the first stress binding layer, and the composite mirror The second stress-binding layer, wherein the heat-dissipating carrier further has a replacement substrate. In addition, the method for fabricating the high luminous efficiency solid-state light-emitting device of the present invention comprises the following steps: (a) forming a composite mirror on the crystal layer of a growing substrate; (b) forming a first layer on the composite mirror a stress-binding layer for introducing an internal stress into the epitaxial layer; (c) bonding a replacement substrate formed with a back-side metallization to the first stress by using a bonding layer a binding layer; (d) removing the growth substrate and applying a surface roughening treatment to the epitaxial layer; (e) forming a mesa, a contact electrode, and a protective layer 10 357 672 No. Patent application supplement, revised unlined specification replacement page revision date: 100 years of passivation layer; (f) removing part of the composite mirror and the first stress binding layer to complete the first a stage wafer definition; (g) a paste onto an electronic tape; and (h) dividing the bond layer, replacing the substrate and the back electrode to complete the second stage wafer definition. Moreover, another method for fabricating a high luminous efficiency solid-state light-emitting device according to the present invention comprises the steps of: (A) forming a composite mirror on a stray layer of a grown substrate; (B) forming a seed layer (seed layer) </ RTI> coating the lining layer and the composite mirror; (C) sequentially forming a first stress-binding layer on the seed layer corresponding to the composite mirror and forming a heat-dissipating layer forming a replacement substrate Introducing an internal stress in the epitaxial layer; (D) forming a second stress-binding layer to coat the replacement substrate, the first stress-bonding layer, and the seed layer; (E) forming a second stress-binding layer a bonding layer having a higher selective etching ratio with the second stress-binding layer; (F) bonding the bonding layer to a temporary substrate; (G) removing the growth substrate and the epitaxial layer Applying a surface roughening treatment; (H) forming a land, a contact electrode, and a protective layer on the epitaxial layer; (I) removing the temporary substrate and etching the second stress-bonding layer and stopping at the bonding layer; Transfer to an electronic grade tape and etch the bond layer to complete the wafer 11 1357 672 Renewal of the patent application No. 096139865, replacement of the instructions without a line after the amendment Replacement date: 100 years June Definition. The effect of the present invention is that it can prevent the release of stress and improve the cracking problem of the wafer, and further, 'implementing the wet etching method to complete the wafer cutting process is not only economical and efficient, and less due to die sawing or lightning. Mechanical stress, dirt, heat affected zone and other problems caused by laser dicing. [Embodiment]
有關本發明之前述及其他技術内容、特點與功效，在 以下配合參考圖式之兩個較佳實施例的詳細說明中，將可 清楚的呈現。 在本發明被詳細描述之前，要注意的是，在 明内容中，類似的元件是以相同的編號來表示 參閱圖1，本發明高發光效率固態發光元件之一第一較 佳實施例，包含：一具有呈相反設置的一第一表面21及一 第二表面22的蟲晶層2、一形成於該第一表面2ι的接觸電 極3、一形成於該第二表面22並具導電性之散熱載座斗、 -夾置於該蟲晶層2與該散熱載座4之間的複合式反射鏡5 、-夾置於該散熱载座4與該複合式反射豸5之間並提供 =晶層2 一内部應力的第一應力束缚層Μ，及一覆蓋該 猫日日層2之一周圍的保護層（passivati〇n hyer)7，其中該 磊晶層2的第一表面21是呈粗化表面。 在本發明該第-較佳實施例中，該第—應力束_ & 的抗剪彈性模數（shear m〇dulus)是至少大於的Gpa。適用於 本發明之第-應力束縛層61 {選自Ni、Cr或此等之一組 12 1357672 第〇_65號專射請案補充、修正後無劃線之賴替換頁 修正日期·_ 100年6月 該第一應力束缚層61 合。在本發明該第一較佳實施例中 是Ni。 極41 具有—背面電極41、—夹置於該背面電 41與該第—應力束缚層61之間的取代基板❿及一央 置於該取代基板42與該第—束缚層61之間的鍵合層❿ 適用於本發明該鍵合層43是選自sn、Pb、In4 Sn/Au合The foregoing and other technical features, features and advantages of the present invention will be apparent from the description of the accompanying drawings. Before the present invention is described in detail, it is noted that, in the description, like elements are denoted by the same reference numerals. Referring to FIG. 1, a first preferred embodiment of the high luminous efficiency solid state light emitting device of the present invention includes a contact layer 3 having a first surface 21 and a second surface 22 disposed oppositely, a contact electrode 3 formed on the first surface 2, and a conductive layer formed on the second surface 22 a heat-dissipating carrier bucket, a composite mirror 5 interposed between the insectized layer 2 and the heat-dissipating carrier 4, sandwiched between the heat-dissipating carrier 4 and the composite reflector 5 and provided a first stress-bonding layer 内部 of an internal stress of the seed layer 2, and a protective layer (passivati〇n hyer) 7 covering one of the day layers 2 of the cat, wherein the first surface 21 of the epitaxial layer 2 is Thicken the surface. In the first preferred embodiment of the invention, the shear modulus (shear m〇dulus) of the first stress beam _ & is at least greater than Gpa. The first stress-bonding layer 61 suitable for use in the present invention is selected from the group consisting of Ni, Cr, or the like. 12 1357672 No. _65 special shot request supplement, no correction after the correction page replacement date correction date _ 100 In June of this year, the first stress-binding layer 61 is combined. In the first preferred embodiment of the invention is Ni. The pole 41 has a back electrode 41, a replacement substrate sandwiched between the back surface electricity 41 and the first stress-bonding layer 61, and a key disposed between the replacement substrate 42 and the first binding layer 61. The layer of bonding layer 43 is suitable for the present invention and is selected from the group consisting of sn, Pb, and In4 Sn/Au.
金等低炼點與具有高延展性（duetiHty)之低揚氏模數（丫啊，s modulus)材料。適合於本發明該散熱载座4之取代基板a 的熱傳導率是至少大於6〇 w/mt ;該背面電極41^選自 Ti、Pt、Ni或Au ;該取代基板42是選自&、、^、 M、SiC、AlSiC、石墨（graphite)、趟、Cu/M 或 c遍/cu ’其中，M是Mo或W。在本發明該第一較佳實施例中， 該取代基板42是Si。 該複合式反射鏡5具有一金屬反射層51、一夾置於該 金屬反射層51與該磊晶層2之間的介電層52、一夹置於該 介電層52與該磊晶層2之間的接觸層53，及複數穿置於該 介電層52並提供該接觸層53與金屬反射層51電性連接的 金屬柱54。定義該接觸層53與介電層52之折射率分別為 ηι與η2，且ηι>ιΐ2。適用於本發明該金屬反射層51與金屬 柱54是選自Au、A卜Ag、Ni、Cu、Pt、Pd，或ιη ;該接 觸層53是選自ITO、Ni/Au，或Ru〇2。在本發明該第—較 佳實施例中，該介電層52與該接觸層53分別是Si〇2與 ITO ;該接觸層53的厚度是介於10 nm〜500 nm之間。 值得一提的是，該介電層52扮演著於該接觸層53與 13 1357672 第096139865號專利申請案補充、修正後無劃線之說明書替換頁 修正日期：100年6月 該金屬反射層5!之間的阻障層，不僅大幅地改善了該複合 式反射鏡5的性能，且整體元件長在時間的使用下亦維持 其信賴性。此外，該接觸層53之折射率大於該介電層… 亦改善該複合式反射鏡5之折射率反差値。因此，在沒有 顯著地減少整體發光元件的電性下，降低了該接觸層^(即 ，ΙΤΟ)與金屬反射層51的接觸面積，仍可達到提昇折射率 反差值的特點。 I閱圖2〜圖3，本發明該第-較佳實施例的製作方法 ’包含以下步驟： 0)於一成長基板U之磊晶層2上形成該複合式反射 鏡5 ; (b) 於該複合式反射鏡5上形成該第一應力束缚層61 以於該蟲晶層2内引入一内部應力； (c) 利用該鍵合層43將該形成有背面電極41的取代基 板42鍵合於該第一應力束缚層61 ; • (d)移除該成長基板11並對該磊晶層2施予表面粗化 處理； (e) 於該磊晶層2形成平台、該接觸電極3及保護層7 (f) 移除部分的複合式反射鏡5與第一應力束缚層Η 以完成第一階段的晶片定義； (g) 轉貼到一電子級膠帶丨2上；及 (h) 分割該鍵合層43、取代基板42與背面電極41以完 成第二階段的晶片定義並完成如圖1所示的第一較 14 第865號專利申請案補充 '修正後無劃線之說明書替換頁 修正日期：100年6月 佳實施例。 在本發明該第-較佳實施财，該步驟⑷的絲基板 11為藍寶石基板，該步驟⑷的蟲晶層2為⑽系材料，該 蟲晶層2内的内部應力為壓縮應力（_陶咖st聰）；該 步= (c)之第—應力束縛層61是利用電鍍法所製成；該步驟 ⑷是利用雷射剝離（Iaser nft_〇ff，簡稱ll〇)法所完成；該 步驟⑴是湘濕式_法移除分的複合式反㈣5與第一 應力束缚層61。利用電鍍法於形成該步驟⑷之第一應力束 名層61 #過程中，是同時引入一處理溫度介於150〇C〜400 U處理時間介於10分鐘〜扇分鐘之間的熱處理（thermal treatment)。在本發明該第—較佳實施例中該步驟⑷之熱 處理溫度及熱處理時間分別是25〇它與3〇分鐘。 冬值仔一提的是，該磊晶層2對溫度變化的反應，是沿 者實質上平行於該磊晶層2内的介面(如，pn介面，圖未示） 之-方向或多方向產生膨脹或收縮；此外，成長於該成長 基板Η上之蟲晶層2,將因CTE不匹配而在室溫下處於高 壓縮應力狀態。而值得注意的是，當該蟲晶層2在實施 LLO製程中吸收到脈衝式紫外光（uv)雷射時，將於該成長 基板11與該蟲晶層2之（A1)GaN的界面間產生高溫分解 (decomposition)。於分解過程產生電漿（piasma)以製造出氮 氣（NO並在原處留下一 Ga金屬層（熔點< 3〇。〇。此 製程將大幅地增加整體元件的溫度。 相對地，在本發明該第一較佳實施例之方法的步驟（b) 中，其形成於該磊晶層2中的内部壓縮應力，可在後續的 15 1357672 第096139865號專利申請案補充、修正後無劃線之說明書替換頁 修正日期：100年6月 元件製程（如，裸片黏貼製程）中或操作中防止整體應力自壓 縮應力轉換成拉伸應力，其形成於該磊晶層2内的壓縮應 力，僅會在超過裸片黏貼，程的溫度或超過操作狀態下的 溫度被釋放出來。由前述說明可知，該步驟⑼中所形成的 第-應力束缚層61不僅可維持該蟲晶層2内之該方向或該 多方向的歷縮應力；此外’亦在LL〇製程、裸片黏貼製程 及LED封裝過程中防止壓縮應力的釋放並提供優異的產量Low-point refining points such as gold and low Young's modulus (s modulus) materials with high ductility (duetiHty). The thermal conductivity of the substrate a suitable for the heat dissipating carrier 4 of the present invention is at least greater than 6 〇 w / mt; the back electrode 41 is selected from Ti, Pt, Ni or Au; the substrate 42 is selected from & , ^, M, SiC, AlSiC, graphite, bismuth, Cu/M or c pass / cu 'where M is Mo or W. In the first preferred embodiment of the invention, the replacement substrate 42 is Si. The composite mirror 5 has a metal reflective layer 51, a dielectric layer 52 sandwiched between the metal reflective layer 51 and the epitaxial layer 2, and a dielectric layer 52 and the epitaxial layer. A contact layer 53 between the two, and a plurality of metal pillars 54 disposed on the dielectric layer 52 and electrically connecting the contact layer 53 and the metal reflective layer 51. The refractive indices of the contact layer 53 and the dielectric layer 52 are defined as ηι and η2, respectively, and ηι > ιΐ2. The metal reflective layer 51 and the metal pillar 54 suitable for use in the present invention are selected from the group consisting of Au, A, Ag, Ni, Cu, Pt, Pd, or iπ; the contact layer 53 is selected from the group consisting of ITO, Ni/Au, or Ru〇2. . In the first preferred embodiment of the present invention, the dielectric layer 52 and the contact layer 53 are Si〇2 and ITO, respectively; the thickness of the contact layer 53 is between 10 nm and 500 nm. It is worth mentioning that the dielectric layer 52 acts as a supplement to the contact layer 53 and 13 1357672 Patent Application No. 096,139,865, and the revised unlined specification page is replaced. Date: 100 June, the metal reflective layer 5 The barrier layer between them not only greatly improves the performance of the composite mirror 5, but also maintains the reliability of the overall component over time. In addition, the refractive index of the contact layer 53 is greater than that of the dielectric layer... and the refractive index contrast 値 of the composite mirror 5 is also improved. Therefore, under the electrical property of the overall light-emitting element, the contact area of the contact layer (i.e., ΙΤΟ) with the metal reflective layer 51 is lowered, and the refractive index contrast difference can still be achieved. 2 to FIG. 3, the manufacturing method of the first preferred embodiment of the present invention includes the following steps: 0) forming the composite mirror 5 on the epitaxial layer 2 of a growth substrate U; (b) The first stress-bonding layer 61 is formed on the composite mirror 5 to introduce an internal stress into the crystal layer 2; (c) bonding the replacement substrate 42 on which the back surface electrode 41 is formed by the bonding layer 43 In the first stress-binding layer 61; (d) removing the growth substrate 11 and applying a surface roughening treatment to the epitaxial layer 2; (e) forming a land, the contact electrode 3, and the epitaxial layer 2; The protective layer 7 (f) removes part of the composite mirror 5 and the first stress-binding layer Η to complete the wafer definition of the first stage; (g) is affixed to an electronic grade tape 丨 2; and (h) divides the Bonding layer 43, replacing substrate 42 and back electrode 41 to complete the second stage of wafer definition and complete the first page of the first application No. 865, as shown in FIG. Date: 100 years of June good example. In the first preferred embodiment of the present invention, the silk substrate 11 of the step (4) is a sapphire substrate, and the crystal layer 2 of the step (4) is a (10)-based material, and the internal stress in the crystal layer 2 is a compressive stress (_陶The step of (c) is that the stress-binding layer 61 is formed by electroplating; the step (4) is performed by a laser stripping method (Iaser nft_〇ff, abbreviated as ll〇); The step (1) is a composite inverse (four) 5 and a first stress-binding layer 61 of the wet-type method. In the process of forming the first stress beam name layer 61# of the step (4) by electroplating, a heat treatment (thermal treatment) is carried out simultaneously with a treatment temperature of between 150 ° C and 400 U and a treatment time of between 10 minutes and 1 minute. ). In the preferred embodiment of the invention, the heat treatment temperature and heat treatment time of the step (4) are 25 Torr and 3 Torr, respectively. In the case of the winter value, the reaction of the epitaxial layer 2 to the temperature change is substantially parallel to the interface in the epitaxial layer 2 (eg, pn interface, not shown) or in multiple directions. The expansion or contraction occurs; in addition, the crystal layer 2 grown on the growth substrate 将 will be in a state of high compressive stress at room temperature due to the CTE mismatch. It is worth noting that when the crystal layer 2 absorbs the pulsed ultraviolet (uv) laser in the LLO process, it will be between the growth substrate 11 and the (A1) GaN interface of the crystal layer 2. Produces pyrolysis. Producing a plasma (piasma) during the decomposition process to produce nitrogen (NO and leaving a Ga metal layer in situ (melting point < 3. 〇. This process will greatly increase the temperature of the overall element. Relatively, in the present invention In step (b) of the method of the first preferred embodiment, the internal compressive stress formed in the epitaxial layer 2 can be supplemented and corrected after the subsequent application of the patent application No. 096,139, 865 Manual replacement page revision date: In the 100-year component process (eg, die attach process) or in operation, the overall stress is prevented from being converted from compressive stress into tensile stress, and the compressive stress formed in the epitaxial layer 2 is only It will be released when the die is pasted, the temperature of the process or the temperature exceeding the operating state is released. It can be seen from the above description that the first stress-bonding layer 61 formed in the step (9) can not only maintain the inside of the insect layer 2 Direction or the multi-directional stress; in addition, it also prevents the release of compressive stress and provides excellent yield during LL〇 process, die attach process and LED packaging process.
參閱圖4,本發明高發光效率固態發μ件之―第二較 佳實施例，大致上是相同於該第一較佳實施例。其不同處 在於’更包3 -包裹该散熱载i 4、該第—應力束缚層61 、該複合式反射鏡5的第二應力束缚層62。在本發明該第 二較佳實施例中，該散熱載座4具有―取代基板44。適用 於本發明該取代基板44是選自Cu或Ni。在本發明該第二 較佳實施射’該取代基板44是Cu，且該取代基板料的 厚度是介於30 μιη〜200 μηι之間。 參閱圖5〜圖7,本發明該第二較佳實施例的製作方法 ’包含以下步驟： (Α)於成長基板13之蟲晶層2上形成該複合式反射 鏡5 ; (Β) 形成—晶種層63以包覆該遙晶層2與複合式反射 鏡5 ; (c)於對應4複合式反射鏡5之晶種層上依序形成 該第一應力束缚層61及一散熱層以形成該取代基 16 1357672 第096139865號專利申請案補充、修正後無劃線之說明書替換頁 修正日期：1〇〇年6月 板44並於該蟲晶詹2内引入一内部應力； (D) 形成5亥第一應力束缚層62以包覆該取代基板44、 第一應力束缚層61及晶種層63 ; (E) 形成一包覆該第二應力束缚層62且與該第二應力 束缚層62互為高選擇蝕刻比的結合層14 ; (F) 將該結合層14與一暫時基板16貼合； (G) 移除該成長基板13並對該蟲晶層2施予表面粗化 處理； (H) 於該磊晶層2形成平台、接觸電極3及保護層7 ; (I) 移除該暫時基板16並#刻該第二應力束缚層62且 停止於該結合層14 ;及 (J)轉貼到一電子級膠帶17上並姓刻該結合層丨4以完 成晶片定義。 該步驟（B)〜(E)的晶種層63 '第一' 二應力束缚層61、 62、取代基板44及結合層14是利用是使用電子束蒸鍍法 (e-beam evaporation)或電鍍法所製成；該步驟（F)是使用一 高分子（polymer)層15貼合該結合層14與該暫時基板i6。 在本發明該第二較佳實施例中，該步驟（B)的晶種層63是使 用電子束蒸鍍法；該步驟（D)、（E)的第二應力束缚層62、結 合層14是使用連續電鍍；該步驟（C)第一應力束缚層61、 取代基板44是使用圖案化（patterned)電鑛。 適用於本發明該步驟（B)之晶種層63是選自Ti/Au或 Ti/Ni ;該第一、二應力束缚層61、62是選自Ni、Cr，或此 等的一組合；該散熱層（即，該取代基板44)及結合層14是 17 1357672 第096139865號專利申請案補充 '修正後無劃線之說明書替換頁 修正日期：100年6月 選自CU或Ni。在本發明該第二較佳實施例中，該第一、二 應力束缚層61、62是Ni ;該取代基板44及結合層14是 Cu。Referring to Figure 4, a second preferred embodiment of the high luminous efficiency solid state of the present invention is substantially identical to the first preferred embodiment. The difference is that the heat sink 4, the first stress-bonding layer 61, and the second stress-binding layer 62 of the composite mirror 5 are wrapped. In the second preferred embodiment of the present invention, the heat sink carrier 4 has a "substrate substrate 44." The substituted substrate 44 suitable for use in the present invention is selected from Cu or Ni. In the second preferred embodiment of the present invention, the replacement substrate 44 is Cu, and the thickness of the replacement substrate is between 30 μm and 200 μm. Referring to FIG. 5 to FIG. 7 , the manufacturing method of the second preferred embodiment of the present invention includes the following steps: (Α) forming the composite mirror 5 on the crystal layer 2 of the growth substrate 13; (Β) forming— The seed layer 63 covers the crystal layer 2 and the composite mirror 5; (c) sequentially forms the first stress-binding layer 61 and a heat dissipation layer on the seed layer of the corresponding 4-composite mirror 5 Forming the substituent 16 1357672 Patent Application No. 096,139, 865, the specification of the patent application No. 096, 139, 865, and the singularity of the singularity of the singularity of the singularity of the singularity of the singularity of the syllabus; Forming a 5 Hz first stress-bonding layer 62 to coat the replacement substrate 44, the first stress-bonding layer 61, and the seed layer 63; (E) forming a coating of the second stress-binding layer 62 and binding to the second stress The layers 62 are mutually high bonding ratio bonding layers 14; (F) bonding the bonding layer 14 to a temporary substrate 16; (G) removing the growth substrate 13 and applying surface roughening to the crystal layer 2 Processing (H) forming a land, a contact electrode 3, and a protective layer 7 on the epitaxial layer 2; (I) removing the temporary substrate 16 and engraving the second stress bond Layer 62 and stops at the bonding layer 14; and (J) is affixed to an electronic grade tape 17 and the bonding layer 姓4 is surnamed to complete the wafer definition. The seed layer 63 'the first' two stress-binding layers 61, 62, the replacement substrate 44, and the bonding layer 14 of the steps (B) to (E) are made by using electron beam evaporation (e-beam evaporation) or electroplating. The method (F) is to bond the bonding layer 14 and the temporary substrate i6 using a polymer layer 15. In the second preferred embodiment of the present invention, the seed layer 63 of the step (B) is an electron beam evaporation method; the second stress-binding layer 62 of the steps (D), (E), and the bonding layer 14 Continuous plating is used; this step (C) of the first stress-bonding layer 61, the replacement substrate 44 is the use of patterned electric ore. The seed layer 63 suitable for the step (B) of the present invention is selected from the group consisting of Ti/Au or Ti/Ni; the first and second stress-binding layers 61, 62 are selected from Ni, Cr, or a combination thereof; The heat dissipating layer (ie, the substrate substrate 44) and the bonding layer 14 are supplemented by the patent application No. 096, 139, 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 In the second preferred embodiment of the present invention, the first and second stress-binding layers 61, 62 are Ni; and the replacement substrate 44 and the bonding layer 14 are Cu.
值得一提的是，利用電鍍法於形成該步驟（C)之散熱層（ 即，該取代基板44)的過程中是同時引入一熱處理（thermal treatment)。適合於在本發明該第二較佳實施例之該步驟（C) 的熱處理溫度與熱處理時間分別是介於150°C〜400°C之間與 介於10分鐘〜200分鐘之間。在本發明該第二較佳實施例中 ，該步驟（C)的熱處理溫度與熱處理時間分別是250°C與30 分鐘。It is worth mentioning that a thermal treatment is simultaneously introduced by the electroplating method in forming the heat dissipation layer of the step (C) (i.e., the replacement substrate 44). The heat treatment temperature and the heat treatment time suitable for the step (C) of the second preferred embodiment of the present invention are between 150 ° C and 400 ° C and between 10 minutes and 200 minutes, respectively. In the second preferred embodiment of the present invention, the heat treatment temperature and the heat treatment time of the step (C) are 250 ° C and 30 minutes, respectively.
經前述說明可知，本發明該第二較佳實施例是在實施 電鍍銅以形成該取代基板44的過程中引入熱處理致使銅產 生再結晶（recrytallization)，並於冷卻至室溫的過程中在該 磊晶層2内引入該内部應力（即，壓縮應力）。當該磊晶層2( 即，GaN系材料）達250°C的溫度時，GaN與Ni兩者之CTE 不匹配所產生的熱應力是0.49 GPa。因此，形成於該複合 式反射鏡5周圍的Ni(即，該等應力束缚層61、62)之剛性 金屬（rigid metal)，及經由使用退火製程以預先形成於該磊 晶層2内部的壓縮應力，主要是為了維持該磊晶層2中的 壓縮應力（-1.2 GPa)，以使得在LLO製程中所產生的熱應力 衝擊減到最小並降低晶片破裂的機率。 適用於本發明該第二較佳實施例之步驟（I)的濕式蝕刻 劑（wet etching agent)是選自FeCl3水溶液或HN〇3水溶液； 該步驟（J)的濕式蝕刻劑是選自含有NH4OH及H202的水溶 18 1357672 第096139865號專利申請案補充、修正後無劃線之說明書替換頁 修正曰期：100年6月 液，或含有KCN的水溶液。 較佳地，該步驟（I)的濕式蝕刻劑是使用FeCl3水溶液， 且FeCl3溶液的濃度是介於1 %〜30 %之間；該步驟（J)是使 用含有nh4oh及h2o2的水溶液，且nh4oh : h2o2 : h2o 的體積濃度是介於1 : 1 : 1〜1 : 1 : 300之間。在本發明該 第二較佳實施例中，該步驟（I)的濕式蝕刻劑是使用 Transene 公司（Transene company, Inc.)所製造之型號為 Nickel Etchant TFG的濕式蝕刻劑；該步驟（J)的濕式蝕刻劑 是使用Transene公司所製造之型號為Copper Etchant APS-100的濕式蝕刻劑。 再參圖7,值得一提的是，由於該步驟（I)所使用的濕式 蝕刻劑無法蝕刻該結合層14僅能蝕刻掉該第二應力束缚層 62 ;因此，該步驟（I)的蝕刻行為是終止於該結合層14。相 對地，由於該步驟（J)所使用的濕式蝕刻劑無法蝕刻該第二 應力束缚層62僅能蝕刻掉該結合層14 ;因此，該第二應力 束缚層62於該步驟（J)的蝕刻行為中主要是扮演著蝕刻阻障 (etching stop)的作用。 經前段說明可知，本發明主要是藉由該第二應力束缚 層62與該結合層14相互提供蝕刻阻障的作用並實施濕式 银刻法來完成晶圓切割製程（singulation process)。藉此避免 其他先前技術所使用的晶圓切割製程，如晶片切割或雷射 切割等製程所致的機械應力或其他應力。因此，經濟效益 高；此外，因未遭受到典型的機械切割製程，不僅少掉了 機械應力或髒污問題，亦沒有典型的雷射切割製程才有的 19 1357672 第0%139865號專利申請案補充、修正後無劃線之說明書替換頁 埶影響F。 修正日期：丨00年6月 -g1* |ρρ Ο 綜上所述，本發明高發光效率固態發光元件及盆製作 方法，可防止壓縮應力的釋放並改善晶圓的破裂問題，此 外’實施濕式钱刻法來完成晶圓切割製程不僅經濟效益高 ，且少掉了機械應力、髒污、熱影響區等問題 ：： 本發明之目的。 惟以上所述者，僅為本發明之較佳實施例而已，當不 能以此限定本發明實施之範圍，即大凡依本發明申請:利 乾圍及發明說明内容所作之簡單的等效變化與修飾，皆仍 屬本發明專利涵蓋之範圍内。 【圖式簡單說明】 、…圖1是-正視示意圖，說明本發明高發光效率固態發 光元件之一第一較佳實施例； 圖2是-元件製作流程圖，說明本發明該第—較佳# 施例之製作方法的步驟（a卜; 貝 圖3是-元件製作流程圖’說明本發明該第一較佳每 施例之製作方法的步驟（e)〜(h) ; ^ :4是一正視示意圖’說明本發明高發光效率固態發 先兀件之一第二較佳實施例； 圖5是一元件製作流程圖，說明本發明該第二較佳每 施例之製作方法的步驟（A)~(D) ; ^As can be seen from the foregoing description, the second preferred embodiment of the present invention introduces heat treatment during the process of electroplating copper to form the replacement substrate 44 to cause recrystallization of copper, and during cooling to room temperature. This internal stress (ie, compressive stress) is introduced into the epitaxial layer 2. When the epitaxial layer 2 (i.e., GaN-based material) reaches a temperature of 250 ° C, the thermal stress generated by the CTE mismatch of both GaN and Ni is 0.49 GPa. Therefore, the rigid metal of Ni (ie, the stress-bonding layers 61, 62) formed around the composite mirror 5, and the compression formed in advance in the epitaxial layer 2 by using an annealing process The stress is mainly to maintain the compressive stress (-1.2 GPa) in the epitaxial layer 2 to minimize the thermal stress shock generated in the LLO process and reduce the probability of wafer cracking. The wet etching agent suitable for the step (I) of the second preferred embodiment of the present invention is selected from an aqueous solution of FeCl3 or an aqueous solution of HN〇3; the wet etchant of the step (J) is selected from the group consisting of Water-soluble solution containing NH4OH and H202 18 1357672 Patent Application No. 096,139, 865, the application of the s. Preferably, the wet etchant of the step (I) is an aqueous solution of FeCl3, and the concentration of the FeCl3 solution is between 1% and 30%; and the step (J) is an aqueous solution containing nh4oh and h2o2, and Nh4oh : h2o2 : The volume concentration of h2o is between 1: 1 : 1~1 : 1 : 300. In the second preferred embodiment of the present invention, the wet etchant of the step (I) is a wet etchant of the type Nickel Etchant TFG manufactured by Transene Company (Transene company, Inc.); The wet etchant of J) is a wet etchant of the type Copper Etchant APS-100 manufactured by Transene. Referring again to FIG. 7, it is worth mentioning that the wet etchant used in the step (I) cannot etch the bonding layer 14 and can only etch the second stress-binding layer 62; therefore, the step (I) The etching behavior is terminated by the bonding layer 14. In contrast, since the wet etchant used in the step (J) cannot etch the second stress-bonding layer 62, only the bonding layer 14 can be etched away; therefore, the second stress-binding layer 62 is in the step (J) The etching behavior mainly plays the role of an etching stop. As can be seen from the foregoing description, the present invention mainly performs the wafer singulation process by providing the etch barrier by the second stress-binding layer 62 and the bonding layer 14 and performing the wet silver etching method. This avoids the wafer cutting processes used in other prior art, such as mechanical stress or other stresses caused by processes such as wafer cutting or laser cutting. Therefore, the economic benefits are high; in addition, because of the typical mechanical cutting process, not only the mechanical stress or the problem of soiling is eliminated, but also the typical laser cutting process is available. 19 1357672 Patent No. 0 139865 Supplementary, corrected, and unlined instructions replace the page 埶Impact F. Amendment date: June 2000-g1* |ρρ Ο In summary, the high luminous efficiency solid-state light-emitting element and the pot making method of the present invention can prevent the release of compressive stress and improve the cracking problem of the wafer, and The method of engraving money to complete the wafer cutting process is not only economically efficient, but also reduces mechanical stress, dirt, heat affected zone and the like: The purpose of the present invention. However, the above is only the preferred embodiment of the present invention, and the scope of the present invention cannot be limited thereto, that is, the simple equivalent change between the application of the present invention and the contents of the invention is Modifications are still within the scope of the invention. BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a front elevational view showing a first preferred embodiment of a high luminous efficiency solid state light emitting device of the present invention; FIG. 2 is a flow chart of component fabrication illustrating the first preferred embodiment of the present invention. The steps of the manufacturing method of the embodiment (ab; the figure 3 is - the component fabrication flow chart) illustrates steps (e) to (h) of the first preferred embodiment of the present invention; ^: 4 is BRIEF DESCRIPTION OF THE DRAWINGS FIG. 5 is a flow chart showing the fabrication of a method for fabricating a second preferred embodiment of the present invention. A)~(D) ; ^
圖6是-元件製作流程圖，說明本發明該第二較佳杏 施例之製作方法的步驟（E)〜(G);及 H 是-元件製作流程圖，說明本發明該第二較佳實 圖 20 1357672 第096139865號專利申請案補充、修正後無劃線之說明書替換頁 修正日期：100年6月 施例之製作方法的步驟（H)〜(J)。6 is a flow chart of component fabrication, illustrating steps (E) to (G) of the method for fabricating the second preferred apricot embodiment of the present invention; and H is a component fabrication flowchart illustrating the second preferred embodiment of the present invention. Illustrator 20 1357672 Patent Application No. 096,139, 865, Supplementary, and Corrected, Unlined Instructions Replacement Page Revision Date: Steps (H) to (J) of the production method of the June 100th embodiment.
21 1357672 第096139865號專利申請案補充、修正後無劃線之說明書替換頁 【主要元件符號說明】 修正日期：100年6月 11 _···. .....成長基板 42…·‘ …‘·取代基板 12…·. ……電子級膠帶 43…. .....鍵合層 13…… -----成長基板 44··... •…取代基板 14 -----結合層 5…… •…複合式反射鏡 15••… •…高分子層 51，…. .....金屬反射層 16 …··暫時基板 52 ····介電層 17••… …·電子級膠帶 53 •…接觸層 2…… …日日層 54••… .....金屬柱 21 ·.... —第 表面 61 ••… …· ·第一應力束缚層 22…… •…第二表面 62..… ……第二應力束缚層 3…… …··接觸電極 63...·_ .....晶種層 4 ...... ……散熱載座 7…… …·保濩層 41 •…背面電極21 1357672 Patent application No. 096139865 Supplementary, amended, unlined instructions Replacement page [Main component symbol description] Revision date: June, 2011 _···..... Growth substrate 42...·' ... '·Replace the substrate 12...·....Electronic grade tape 43........bonding layer 13... -----Growing substrate 44··...•...Replaces substrate 14 ----- Bonding layer 5...•...combined mirror 15••...•...polymer layer 51,........metal reflective layer 16 ...··temporary substrate 52 ····dielectric layer 17••... ...·Electronic grade tape 53 •...Contact layer 2... ...day layer 54••..... metal column 21 ·.. —surface 61 ••...················ ...... •...Second surface 62...........Second stress-binding layer 3... contact electrode 63...·_..... seed layer 4 ...... ......heat dissipation Carrier 7...... ...·protective layer 41 •...back electrode
22twenty two