TWI357348B - Nano filter structure for breathing and manufactur - Google Patents

Description

135^48 f, invention description: [Technical field] The present invention relates to a filter material structure and a manufacturing method thereof, and more particularly to a nano-scale filter material structure for filtering air during breathing and its manufacture method. [Prior Art] With the development of industry and commerce, the population-intensive urban benefits have increased, and the air pollution caused by human activities has also deteriorated day by day. In recent years, the air pollution caused by the exhaust emissions of steam locomotives, the large use of fossil fuels, and the escape of various hazardous air pollutants are even more harmful to people in indoor and outdoor environments with air pollution. harm. Therefore, the importance of air quality is more concerned and valued by the public. On the other hand, viruses, bacteria and toxic dust that directly affect human health are more concerned and valued by the public. People use filter materials to isolate viruses and bacteria from entering the body's respiratory system and causing infection. Most of the filters and materials currently used are over-twisted nets made of fiber stacks, such as multi-layered crepe and mesh made of polypropylene (PP). The filter layer is applied to the mask. , mask, filter nose filter or respirator filter. In the case of masks, masks are generally classified into dust masks, activated carbon masks, and medical grade masks - N95 masks approved by the National Institute for Occupational Safety and Health (NIOSH). N95 size mask 3 1357348 4 The fiber structure is very tight 'blocks 95% of the particles above 0.3 micron (ym) size. Therefore, the N95 size mask is better than the dust mask and activated carbon mask. However, 'as shown in Table 1', for general bacteria, the diameter is 0.3 micron (/zm) or more and is easily blocked by the N95 mask; but for the virus, the size of the diameter is nanometer and much smaller. The micron level of bacteria, such as the Severe Acute Respiratory Syndrome (SARS) virus, is only ι〇〇~12〇N (nm), and the 'N95 mask cannot effectively block the passage of the virus. . Species size (micron) Related diseases Viral mucus virus diameter: 0.08~0.12 Influenza A, B, C (Virus) (Orthomyxoviridae) Coronaviridae Diameter: 0.10~0.12 SARS Serratia marcescens ( Serratia Diameter: 1.0 to 5.0 Nosocomial (Bacteria) Marcescens Infections) Mycobacterium tuberculosis Diameter: 0.45 Tuberculosis - Table 1 Therefore, the filter material structure produced by the conventional fiber stacking technique is only It can achieve micron-level protection, and it is almost ineffective for nano-grade virus protection. In contrast, since the filter material limits the size of the transportable particles, the refinement of the filter structure is less likely to cause uncomfortable breathing pressure to the user. That is, if the opening ratio of the filter material is smaller, the degree of air permeability is 4 I35f348 difference. It is difficult for the user to perform normal inhalation or exhalation through the filter medium. SUMMARY OF THE INVENTION In view of the disadvantages of the conventional filter media, one of the objects of the present invention is to provide a nano-filter material structure for suction and a method for manufacturing the same to effectively filter disease, bacteria and toxic dust. Another object of the present invention is to provide a nano-scale coffin for breathing, . Structure and its manufacturing method to improve the aperture ratio. Still another object of the present invention is to provide a nano-scaled village structure and a method for producing the same to increase the service life of the filter material structure. To achieve the above and other objects, the present invention provides a nanofiltration and material structure for breathing, comprising: a top gate having a plurality of top openings; a bottom _, preferably in the gate and having a plurality a bottom opening 'the bottom opening and the top opening are offset from each other; a plurality of side walls 'between the top gate and the bottom gate and adjacent to a top opening and a bottom opening' each-side wall gate have a plurality of transitional barriers parallel to the top gate and the bottom gate and forming a plurality of passages; and a plurality of branches (four) between the gate and the bottom gate and located on the two sides The meeting place; wherein the passing systems have a channel height of 300 nm or less. In order to achieve the above and other objects, the present invention provides a method for manufacturing a nano-filter material for breathing in a first embodiment, the nano-structure comprising a plurality of top (four) mouth regions and a plurality of bottom opening regions. a side wall gate region and a plurality of support body regions, each of which is adjacent to a top 5 1357348 4 open areas and a bottom open area, the support body areas are located at the intersection of the two side wall gate areas, and the The following steps: (A1) forming a patterned lift layer on a substrate; (A2) forming a patterned first support layer on the portion of the lift layer and a portion of the substrate, such that the bottom open areas are not Having the first support layer, (A3) on the lift layer of the bottom open regions, and forming a first sacrifice on the top open region and the first support layer of the sidewall spacers a layer (A4) forming a patterned second support layer on the sidewall gate regions and the support regions; (A5) forming a pattern on the top opening regions, the bottom opening regions, and the sidewall spacer regions Huaxin-Second Sacrificial Layer (A6) forming a top gate layer on the bottom open region and the topmost sacrificial layer of the sidewall spacers, and on the topmost support layer of the support regions; (A7) removing the lift layer And all of the sacrificial layers; and (A8) removing the substrate; wherein each of the foregoing sacrificial layers is formed to a thickness of less than or equal to 300 nanometers. Wherein, after the step (A5), a step (A5-1) may be further included: the steps (A4) and (A5)' are sequentially repeated to form a support layer of the plurality of layers and a sacrificial layer of the plurality of layers. In order to achieve the above and other objects, the present invention provides a method for manufacturing a nano-filter material for breathing in a second embodiment, the nano-scale filter structure comprising a plurality of top open areas, a plurality of bottom open areas, and a plurality The sidewall gate region and the plurality of support regions are each adjacent to a top open region and a bottom open region, and the support regions are located at the intersection of the two sidewall gate regions, and the method comprises the following steps: (B1) forming a patterned lift layer on a substrate; (B2) forming a patterned first support layer on the portion of the lift layer and a portion of the substrate such that the bottom open regions do not have 6 I35f348 (B3) forming a patterned first sacrificial layer in the bottom opening region, the top opening regions and the sidewall spacer regions; (B4) in the sidewall spacer regions and the Forming a second support layer in the support region; (B5) forming a second sacrificial layer in the top open region, the bottom open region, the sidewall spacers, and the support regions; (B6) In the top open areas, the The bottom opening area, the side wall sluice areas and the support body areas form a third support layer; (B7) the top opening area, the bottom opening area, the side wall sluice areas and the support bodies Forming a protective layer; (B8) etching the support regions and removing at least the third support layer to form a support groove; (B9) laterally forming the support grooves Etching and removing a portion of the sacrificial layer to form a plurality of support body wing grooves; (B10) filling the support body grooves and the support body wing grooves to form a plurality of filler bodies; (Bn) pair The top open areas and the bottom open areas are etched and at least the third support layer is removed; the support areas are formed in the top open areas, the bottom open areas, the side wall areas, and the side portions Forming a patterned first channel sacrificial layer; (Bi3) forming a top gate layer in the bottom opening area, the side wall gate areas and the support body areas; (B14) removing the lifting layer and all sacrifices a layer; and (Bi5) removing the substrate; wherein A sacrificial layer system is formed to a thickness less than or equal 3〇〇 nm. In the second embodiment, after the step (B6), a step (B6J) may be further included: the steps (B5) and (B6) are sequentially repeated to form a support layer of the plurality of layers and a sacrificial layer of the plurality of layers. And, in the step (7), the layer finally formed may be a layer. In the second embodiment, after the step (B12), the method further comprises: (B12-1) forming a patterned first channel support layer on the sidewall gate regions and the support regions; and (B12) -2) Steps (B12) and (B12-1) are sequentially repeated to form a channel support layer of a plurality of layers and a channel sacrificial layer of the plurality of layers, and the layer formed last is a channel sacrificial layer. In an embodiment of the invention, the top openings and the side lengths of the bottom openings may be formed to have a length on a micrometer scale. The side openings and the periphery of the bottom openings may have the side wall gates. Each support body comprises a filler body, and the material of the filler body may be a polymer. The top surface of the top gate may further comprise a film for decomposing organic matter. Thereby, the present invention utilizes semiconductor process technology to fabricate the nano-scale filter material structure, which can easily reach the nanometer-scale filter fence and rapidly manufacture the nano-scale filter material structure; the micro-scale top gate and the bottom gate are more Micron-level preliminary filtration of the incoming gas stream can be extended to extend the life of the filter media. The multi-layered filter and barrier design improves the opening ratio of the filter and the material, allowing the user to easily inhale or exhale through the filter. DETAILED DESCRIPTION OF THE INVENTION In order to fully understand the objects, features and effects of the present invention, the present invention will be described in detail by the following specific embodiments and the accompanying drawings. Advances and maturity of panel process technology, which allows precise control of film thickness and easy formation of nanometer-thickness films. The present invention utilizes non-toxic materials and forms a thickness of only nanometers by a thin film deposition process commonly used in semi-conductor 8 I35T348 process technology or panel process technology, such as sputtering, physical vapor deposition or chemical vapor deposition. The thin film is then selectively etched at different etching ratios by etching techniques commonly used in semiconductor process technology or panel process technology, such as dry etching, wet etching, or gas etching. Therefore, adjacent materials can be etched into a barrier-like channel structure by using different materials with different etching ratios and suitable etching methods. The semiconductor process technology or the panel process technology can not only accurately control the thickness of the laminated structure, but also can quickly manufacture the nano-scale filter structure of the present invention, and the increase of the number of layers can increase the intake and output of the airflow and improve the filter material. The aperture ratio of the structure. Referring first to the first drawing, a cross-sectional view of a nanofiltration passage of the present invention is shown in one embodiment. The nano-scale filter structure comprises a top gate 110, a bottom gate 120 and a plurality of support bodies 130. The airflow AF can be accessed by the top opening 112 of the top gate 110, and the filter passage formed by the distance d1 between the support bodies 130, and then It flows out from the bottom opening 122 of the bottom gate 120. The filtration level of the filtration channel can be determined by the thickness control of the support body 130. According to the present invention, the nanometer grade and the aperture ratio of the filter material structure are produced by this structure. Referring next to the second drawing, a cross-sectional view of a nanofiltration passage of the present invention is shown in another embodiment. In order to increase the aperture ratio of the filter material, the number or thickness of the support body 130 may be increased in the process to increase the distance d2 between the top gate 110 and the bottom gate 120, and one sidewall gate 140 having a plurality of layers is formed at the filter channel. The sidewall gate 140 can be composed of a plurality of filter grids. The number of channels is two: for the gates „. or the bottom _. The distance between the two is thick or thick. Therefore, with the support body 130 The number of stacking: add, add, so that the top closed door 110 and the bottom idle door 120:: distance: can be more than _ = vapor deposition or other equivalent two; two maps relative to 篦一冃冰..., and In the case of the AF-production, the addition of a bypass channel is used as an example to make the gas: L two-way path flowable. This can effectively increase the opening of the filter channel: the opening pitch w2 can also be used by the reticle The design and the control of Puguang f: make it a micron-level opening, which can be reversed;

F is initially filtered (micron-sized particles). ', knife L coffin in - real - nano-scale process technology semiconductor process technology or surface (10) in the implementation of the structure of the top of the figure of the younger brother _ with _ part open „ where the top (four) = the right The side (ie, the bottom) is a bottom opening (2), and the top: the bottom side (ie, the bottom) is the bottom door 12. The third figure;: j is a kind of 'in case of actual implementation. The area of the coffin structure and the number of openings are determined according to actual needs. The heart is next to the fourth figure, which is a three-dimensional schematic diagram of the material structure of the present invention in another embodiment. The two sides of the material structure also have the side wall gate i. The embodiments shown in the third and fourth figures can be fabricated by using semiconductor process technology or panel process technology. Next, please refer to the fifth figure, which is the third and fourth figures. The top view of the nano-scale filter structure shown. Next, the bottom gate section AA', the top gate section BB' and the sidewall gate section CC' will be used to illustrate the top open area, the bottom open area, the side wall gate area and the support body area. The production process in the process step, wherein the tops are open 112. The shapes of the top gates 110, the support bodies 13 and the side wall gates 140 are only an example, and any other shape that can constitute the filter material structure of the present invention, such as a circle, does not leave the scope of the present invention. In addition, in order to clearly explain and compare the top opening area, the bottom opening area, the side wall gate area and the support body area in each step, in the fifth figure, the side wall gate section cc is enlarged to the bottom gate section AA. ', the top gate section bb, the same. Next, refer to the sixth to eleventh figure, which is a cross-sectional view of the manufacturing process of the nano-scale filter structure in the first embodiment. The sixth to eleventh figure is the first In the five figures, the bottom gate section line AA' is a cross-sectional view in the process step, and the sixth to tenth-B-th is the top gate cross-section line BB in the fifth figure, and the cross-sectional view in the process step 'sixth C to ten- Figure C is a cross-sectional view of the sidewall idle cross-section line CC' in the process of the fifth step. The present invention uses a semiconductor process technology or a panel process technology to fabricate a nano-scale filter structure. The method of forming the layers in the process step includes Sputter, chemical vapor CVD, PVD, or other equivalent methods, and patterning refers to lithography and etching techniques commonly used in semiconductor process technology or panel process technology. The engraving technique includes dry etching, wet etching, gas etching or other equivalent etching methods. In the first embodiment, please refer to the sixth A, B, and c diagrams, and the nano 1357348 filter structure may include support. The body region 200, the opening portion 300, the bottom opening region 400, and the sidewall gate region 500. First, the step (A1) is performed to provide a substrate 601. The substrate 601 can be used, for example, a glass substrate or a wafer substrate. (wafer), plastic substrate (plastic) or other equivalent substrate. A patterned one of the lift layers 603 is then formed on the substrate 601. Next, step (A2) is performed to form a patterned first support layer 605a', that is, in the support body region 200, the top opening region 300, and the sidewall gate region 500, on a portion of the lift layer 603 and a portion of the substrate 601. The lift layer 603 has the first support layer 605a, and the bottom open region 400 does not have the first support layer 605a. Then refer to Figure 7A, B, and C, and perform step (A3), using ruthenium plating, chemical vapor deposition, physical vapor deposition, or other equivalent methods, and performing lithography and button etching techniques. A first sacrificial layer 6〇7a is formed on the lift layer 6〇3 of the bottom open region 400, and on the first open floor region 605a of the top open region 300 and the sidewall gate region 500. Wherein the sacrificial layer is finally removed, and the present invention utilizes the thickness of the sacrificial layer to control the filtering level of the filtering channel. Thickness control of the film layer is fairly easy and precise under semiconductor process technology or panel process technology. Therefore, the present invention allows the filtration channel to filter the virus, and the thickness (or height) of the sacrificial layer is less than or equal to 300 nm. Then refer to Figure 8A, B, and C for the step (A4), using yttrium plating chemical vapor deposition, physical vapor deposition or other equivalent methods and lithography and etching techniques in the sidewall gate region. A 12th support layer 605b is formed on the first support layer 6〇5a of the sacrificial layer 607a and the support body region 2〇〇. The second support layer in the body of the cutting body region and the sidewall gate region 500 is a continuous layered structure, and the support layer in the sidewall gate region 500 is formed as shown in the second, third, and fourth figures. The filter barrier 142 is shown. The first support layer 6〇5& of the support body region 2〇〇, the top open region 300 and the sidewall gate region 500 in the eighth, fourth, fourth and fourth views will be formed as shown in the second, third and fourth figures. The bottom gate is 12 示. Then refer to the ninth, A, B, and C diagrams, and perform the step (A5), using the sputtered forging gasification, gas chromatography, physical vapor deposition, or other equivalent methods, and performing the experiment and silver engraving. a second sacrificial layer 6〇7b is formed on the first sacrificial layer 607a of the top open region 3〇〇 and the bottom open region 4〇〇, and the second support layer 605b of the sidewall gate region 5〇〇. . Then, refer to Figure 10A, B, and C for the step (A6). Use the Tibetan plating, chemical vapor deposition, physical vapor deposition or other equivalent methods and lithography and surname techniques to open at the bottom. A top gate layer is formed on the sacrificial layer of the topmost layer of the region 400 and the sidewall gate region 500 (i.e., the second sacrificial layer 607b), and on the topmost support layer (i.e., the second support layer 605b) of the support region 200. (top gate layer) 610. In the tenth bth diagram, the top gate layer 610 of the bottom opening region 400 forms the top gate 110 as shown in the second, third, and fourth figures. Next, refer to Figure 11A, B, and C, and perform step (A7) for final etch. 'Use the etching technique, such as dry etching, wet etching, gas etching, or other equivalent method to remove the lift. Layer 603 and all of the sacrificial layers 607a, 607b. Finally, step (A8) is performed to remove the substrate 601, thereby forming a nano-scale filter structure as shown in the third or fourth figure. Removing the substrate 13 1357348 'I is a scribe or other equivalent cracking technique to reach the I semiconductor process technology or the panel process technology should understand the difference between the sides shown in the third and fourth figures. The structure can be achieved by designing the material on the process. Finally, the nano-stage filter structure can be assembled with other 2 fixed pieces, and can be used as a filter, layer or nose pad filter in a mask of a breathing mask. . Read the eleventh, A, B, and C diagrams, which are partial cross-sectional views of the filter structure with five filtration channels. Wi, w2, d, and W1 and then 2 in the figure. The first to fifth support ^ ί i i 6 〇 5a ~ e, and the first to fifth sacrificial layers have been removed and,,,,: in the figure. The foregoing sixth to eleventh drawings have been described as having a two-filter channel=4 (four) material structure, but more the number of channels are considered: increasing the aperture ratio, and therefore, proceeding after step (A5) according to the foregoing method. Step (A5)), that is, repeating the process steps (A4) and (10) shown in Figures 8 and 9 to increase the number of transition channels. That is, the support layer and the sacrificial layer are laminated to each other to form more transition channels. In the tenth channel of the five-channel nano-filter structure, the airflow enters from the top opening area, and the nano-level is passed through the side wall of the side wall, and then the bottom opening area is completely removed. Conversely, if exhaled, the airflow enters from the bottom open area and flows through the side wall gate 5G0 and then flows out from the top open area. It should be understood by the surgeon that either inhalation or exhalation can cause the gas to pass through the sidewall gate area 500' and the airflow during inhalation does not have to enter from the top open area lion or from the bottom open area 400. That is to say, the nano-staged structure has no directional restriction, and both upper and lower sides can be used as the intake surface. 1357348 In this first embodiment, after the step (A6), that is, before removing the lifting layer 603 and all the sacrificial layers 6〇7a, 7〇7b, a further step (A6-1) is included: The paste layer 61 () is formed to decompose one of the organic film 612 (see the thirteenth a, B, c diagram), the film 612 can be Qin (7)), titanium dioxide (Ti02), turn (pt). .. anti-virus, bacteria or materials that can kill viruses and bacteria, which is a catalyst for decomposing organic matter on the filter structure. The film 612 can be formed by physical vapor deposition, chemical vapor deposition, sputtering or other equivalent processes. In the first embodiment, the material selection of the lift layer 003, the support layers 605a to e, the sacrificial layers 607a to e, and the top gate layer 61 is mainly such that when the lift layer 603 and the sacrificial layers 607a to e are etched, the support layer 605a Both ~e and top gate layer 610 are preserved. Tables 2 to 7 below are examples of the etching method of the material and the film layer in the first embodiment and the etching method at the time of the last etching (removing the lift layer and all the sacrificial layers). It is understood that the choice of materials and etching methods is not a limitation, and any other materials and etching methods that can form the nanofiltration material structure of the present invention are not inconsistent with the invention. Among them, the PAN wet residue component is (Phosphorus acid + Acetic acid + Nitric acid) aq, and the BOE wet money engraving component is (HF + NH4F) aq. 15 Select a name material - money engraving (etChm〇de) Lifting layer (603) Molybdenum (Mo) (C12/SF6) Support layer (605) Cerium oxide (SiOx) BOE wet silver engraving layer (607) Turn (Mo PAN wet or dry etching (C12/SF6) top gate layer (610) yttrium oxide (SiOx) BOE wet film (612) titanium oxide (TiOx) dry money (Cl2) or wet rice (Hydrogen Peroxide) Final button (final etch) shoe engraved (Mo) PAN wet surname or gas etching iXeF2) 1357348 Table 2 selection two name material money etch mode (etch mode) lifting layer (603) amorphous bite (a-Si) dry Etching (Cl2) Support layer (605) Cerium oxide (SiOx) BOE wet etching sacrificial layer (607) Amorphous germanium (a-Si) Dry etching (Cl2) Top gate layer (610) Cerium oxide (SiOx) BOE wet etching film (612) Titanium oxide (ΉΟχ) Dry button engraving (Cl2) or wet etching (finogen etch) Final etching (a-Si) Gas etching (XeF2) Table III 16 I35T348

Select three-name material etch mode lift layer (603) molybdenum (Mo) PAN wet or dry etching (Cb/SFd support layer (605) amorphous germanium (a-Si) dry etching (Cb) sacrificial layer (607) Cerium oxide (SiOx) BOE wet etching top gate layer (610) Amorphous (a-Si) dry etching (Cl2) film (612) Titanium oxide (TiOx) Dry money engraving (CI2) or wet surname ( Hydrogen Peroxide) Final etch Etching yttrium oxide (SiOx) and molybdenum (Mo) BOE wet etching and PAN wet etching Table 4 Selection Four Name Materials etch mode Lifting layer (603) Molybdenum (Mo) Dry etching (sf6) Support layer (605) Alloy (AI Alloy) Wet etching (h3po4) Sacrificial layer (607) Molybdenum (Mo) Dry etching (sf6) Top gate layer (610) Alloy (A1 Alloy) Wet etching ( H3po4) Thin film (612) Titanium oxide (TiOx) Dry etching (Cl2) or wet etching (finogen etch) Final etch Etching Molybdenum (Mo) Gas engraving (XeF2) Table 5 17 Selecting five name materials Etch mode Lifting layer (603) Tantalum nitride (SiNx) Wet money etch (dilute HF) Support layer (605) Turn (Mo) PAN wet surname sacrificial layer (607) Tantalum nitride (SiNx) Wet etching ( Di Lute HF) top gate layer (610) flip (Mo) PAN wet etch film (612) titanium oxide (TiOx) dry name engraved (Cl2) or wet engraved (hydrogen peroxide) final silver engraved (final etch) etched tantalum nitride (SiNx) Wet Etching (Dilute HF) 1357348 Table 6 Selecting Six Names Material Etching Mode (etch mode) Lifting Layer (603) Molybdenum (Mo) PAN Wet Etching Support Layer (605) Tantalum Nitride (SiNx) _^^' J (dilute HF) sacrificial layer (607) 钿 (Mo) pan wet surnamed gate layer (610) tantalum nitride (SiNx) ^^Kdilute HF) film (612) titanium oxide (TiOx) dry etching (Cl2) or Hydrogen Peroxide Final #etch Etching Etching Molybdenum (Mo) Etching Table 7 Next, please refer to Figures 13 to 24 for the process steps of the nano-scale filter structure in the second embodiment. In the same way, the twelfth A to twenty-four A is the bottom gate cross-section a A in the fifth figure, and the cross-sectional view in the process step 'Thirteenth B to Twenty-fourth is the first Figure 5 is a cross-sectional view of the top gate line BB' in the process step, and the thirteenth c to twenty-fourth C is the section of the sidewall gate section 'line CC' in the fifth step in the process step Fig. This second embodiment forms a stacked structure similarly to the first embodiment, and the 18 I35T348 uses etching to complete each of the filter channels. However, the second embodiment adopts a one-time forming manner in forming a stacked structure, and each step in the process will be described later in the thirteenth through twenty-fourth drawings. In the first embodiment, referring to Figures 13A, B, and C, the nanoscale filter structure can include a support region 200, a top open region 300, a bottom open region 400, and a sidewall gate region 500. First, step (B1) is performed to provide a substrate 701 which can be used, for example, a glass substrate, a wafer substrate, a plastic substrate or other equivalent substrate. A patterned one lift layer 703 is then formed on the substrate 701. Next, step (B2) is performed to form a patterned first support layer 705a on the portion of the lift layer 703 and a portion of the substrate 701, that is, in the support region 200, the top open region 300, and the sidewall gate region 5〇. The lift layer 703 has the first support layer 705a' and the bottom open region 400 does not have the first support layer 705a. Next, please refer to Figure 14A, B, and C, and perform step (B3) using Tibetan key, chemical vapor deposition, physical vapor deposition or other equivalent methods and lithography and etching techniques at the bottom. Forming a first sacrificial layer on the lift layer 703 of the open region 4' and the first support layer 7〇5a of the top open region 300 and the sidewall gate region 500 (such as sacrificiai laye〇 707a. The thickness (or height) of the sacrificial layer is less than or equal to 300 nm. Next, refer to the fifteenth A, B, and C diagrams, and perform the step (B4) using sputtering, chemical vapor deposition, physical vapor deposition. Or other equivalent method and lithography and etching technique, forming a second on the first sacrificial 19 1357348 layer 707a of the sidewall gate region 5 (9) and the first support layer 7〇5a of the support region 2〇〇 The support layer 705b, wherein in the fifteenth C, the second support layer 705b of the ramming region 2 and the sidewall lands 500 is a continuous layered structure 'the support layer in the sidewall lands 500 Forming a filter handle 142 as shown in the second, third, and fourth figures. A, B, and the support body region 200, the top open region 300, and the first wrap layer 705a of the sidewall gate region 500 form a bottom gate 1 as shown in the second, third, and fourth figures. Referring to Figures 16A, B, and C, proceed to step (B5), using the old ship, chemical vapor deposition, physical vapor deposition, or other equivalent calligraphy, in the top open areas, the The bottom opening area 4 (9), the side wall sluice areas 500, and the support body areas 2 〇〇 form a second sacrificial layer 7 〇 7b. Next, refer to the seventeenth A, B, and C diagrams, and perform the step (B6), using Excavation, chemical vapor deposition, physical vapor deposition or other equivalent methods in the top open region 300, the bottom open regions 400, the sidewall gate regions 500, and the support regions 2 The crucible is formed into a third support layer 7〇5c. Step (B7) is performed, using sputtering, chemical vapor deposition, physical gas φ phase > chiral method or other equivalent method, in the top open region 300 The bottom opening area 400, the side wall gate areas 5〇〇 and the support body areas 2〇〇 form a protective layer 709 Then, referring to the eighteenth A, B, and c diagrams, the step (B8) is performed, and the plurality of support body regions 200 are engraved and at least the third support layer 7〇5c is removed to each support body region 2 Each of the slabs forms a groove of the building body. Since the formation of the groove 21〇 of the support body must be made of a higher power non-uniformity, the patterned photoresist layer 72 is easily at a high power. The non-uniform etching 20 1357348 under the condition that the photoresist is removed at the edge of the opening, and the film layer under the photoresist layer 720 is easily etched, resulting in difficulty in controlling the uniformity of the line width, especially in the number of filtering channels. At the time, the high power anisotropic etch will take longer and the opening edge of the photoresist layer 720 will be removed more severely. therefore,

By the arrangement of the protective layer 709, the underlying film layer can be protected from high power non-uniform etching, and the material of the protective layer 7〇9 can resist high power, for example, The high-power non-uniform etch can be a dry etching technique, and the protective layer 709 is more reactive to wet etching. Therefore, the protective layer 709 can be etched out to an opening by wet etching, and then high-power dry etching is performed. The formation of the support recesses 21 is performed, and the underlying film layer can be ensured without damage by the combination of the photoresist layer and the thin layer 7G9. In addition, in step (B8), at least the third branch body layer 7〇5c is removed, which can be used for 4 wood (4) end point (four) ^ (cafe d coffee, EpD)

Control of the depth of ^. It should be understood by those skilled in the art that any other control technique that achieves the same effect can be applied to the present invention. The nineteenth A, B, and C diagrams of the support step (B9) are performed in the 210 to remove a portion of the sacrificial layer to form a plurality of cut-body flank grooves 212, and the wing grooves 212 Thereafter, the photoresist layer 720 is removed. = (10) A'B, C _, performing the step), and the plurality of fillings Γ are formed in the support grooves 210 and the main body. For example, fill in the main support of the support area + T 4 some filling _ 211 series 919 AJ yellow fork, and by the flank groove shape _ overall structure can be more than 5% of the material can be filled The material of 21 1357348 flexible, such as polymer, can be used to make the filter structure body have higher flexibility and increase the stability of the structure. In the case of a polymer, the polymer is first filled into the support grooves 210 and the support side groove 212, and then heated by a hot furnace to cure the polymer. Referring to the twenty-first, A, B, and C diagrams, the step (B11) is performed to etch the top open area 300 and the bottom open areas 400 and at least remove the third support layer 705c. As with the step (B8), the photoresist layer 720 and the different etching techniques are used to first etch the protective layer, and then perform an opening and then perform high-power non-uniform etching. And, the etching depth is controlled to remove at least the third support layer 705c, which can also be achieved by using the etching end point detector described above, and removing the photoresist layer 720 after the etching is completed. Next, refer to Figure 22, A, B, and C, using the sputtering, chemical vapor deposition, physical vapor deposition, or other equivalent methods and lithography and etching techniques to perform the step (B12). The top open region 300, the bottom open regions 400, the sidewall gate regions 500, and portions of the support regions 200 form a patterned first channel sacrificial layer 710a. Next, please refer to the 23rd, A, B, and C diagrams, using the sputtering, chemical vapor deposition, physical vapor deposition or other equivalent methods and lithography and etching techniques to perform the step (B13). The bottom opening region 400, the side wall gate regions 500, and the support body regions 200 form a top gate layer 713. Wherein in the twenty-third figure B, the top gate layer 713 of the bottom open region 400 forms the top gate 110 as shown in the second, third and fourth figures. Then refer to the 24th A, B, and C diagrams, and perform the step (B14), 22 1357348 for the final etching, using a money engraving technique such as dry-type etching, wet etching, gas etching, or other equivalent method to remove the Lift layer 703 and all sacrificial layers 707a, 707b, 71〇a. Finally, step (B15) is carried out, and the substrate 701' is removed to form a nano-scale filter structure as shown in the third or fourth figure. The method of removing the substrate 701 can be accomplished by scribe or other equivalent slitting techniques. Next, please refer to the twenty-fifth, A, B, and C diagrams, which are partial cross-sectional views of the nano-scale filter material structure with five filter channels. The w 1 , w2 , and d2 in the figure correspond to the first and second graphs respectively. W1, W2, d2. The first to fifth support layers correspond to 705a~e, respectively. The above-mentioned thirteenth to twenty-fourth drawings have explained the manufacturing method of the nano-sized filter material structure having the three-filter passage number, however, the number of the more filter channels can increase the aperture ratio, and therefore, according to the foregoing method, in the step (B6) Then, the step (Β6_ι) is further performed, that is, the process steps (B5) and (B6) are repeated to increase the number of filter channels. That is, the interactive stacking of the support layer and the sacrificial layer can form more filtering channels. Furthermore, in the step (B6-1), the final step may be the step (B5), so that the layer formed last is a sacrificial layer, and the 'protective layer 709 can be used as a function of the support layer' A transitional passage. Referring to the twenty-sixth A, B, and C diagrams, in the second embodiment, the step (B12) may further include two steps: (B12-1) in the sidewall spacers 500 and the The support body regions 200 form a patterned first channel support layer 712a; and (B12-2) sequentially repeat steps (B12) and (B12-1) to form a plurality of channel support layers 712a-712b and The channel sacrificial layer of the plurality of layers and the resulting layer is the channel sacrificial layer. This two steps widens the width of the channel at the side of the open area 400 of the bottom portion 1 1357348 (see Figure 26b). The greater the number of filter channels formed in the aforementioned step (B6-1), the more advantageous the widening of the side channel width of the bottom open region 400 is. For example, a three to four layer channel sacrificial layer can be used to increase the channel width of the side channel of the bottom opening region 400. In the example of the twenty-sixth, a, B, and C diagrams, a three-layer channel sacrificial layer is used (see the X portion in Figure 26B). The aforementioned steps (B6-1), (B12-1) and (B12-2) can be controlled according to actual needs. Φ In this second embodiment, after step (B13), that is, before removing the lift layer 703 and all the sacrificial layers 707a, 707b, and 710a, a step (B13-1) is further included: at the top gate layer A film 714 for decomposing an organic substance is formed on the 712a (refer to the twenty-fifth or twenty-sixth figure), and the film 714 can be an anti-resistant agent such as titanium oxide (Ti〇2), turning (Pt), etc. A virus, a bacterium, or a material that kills disease, bacteria, and is a catalyst that decomposes organic matter on the structure of the filter material. The film 714 can be formed by a physical gas phase process, chemical vapor deposition, sputtering or other equivalent process. Tables Y to 12 are examples of the method of forming the % of the material and each film layer in the second embodiment and the way of engraving (removing the lift layer and all the sacrificial layers) at the time of the last etching, familiar with the technique. It should be understood that the selection of the materials and the method of surname is not a limitation, and any other materials and etching methods that can form the nano/material structure of the present invention are not separated from the PAN wet rice of the present invention. The wet component of (Phosphorus acid + Acetic acid d)aq ' b〇E is (hf + NH4F)aq. 24 1357348

Select a project material etch mode lift layer (703) molybdenum (Mo) PAN wet or dry etch (C12/SF6) support layer (705, 712) yttrium oxide (SiOx) BOE wet etch sacrificial layer (707, 710) Molybdenum (Mo) PAN Wet Etching or Dry Etching (C12/SF6) Protective Layer (709) Copper (Cu) Wet Etching Support Grooves with HNO3 or Ammonium Persulfates (APS) Etching etching molybdenum (Mo) and yttrium oxide (SiOx) high power dry etching (sf6) support body groove side (212) etching method etching molybdenum (Mo) PAN wet etching sidewall gate region (500) etching method etching molybdenum (Mo) and yttrium oxide (SiOx) High-power dry etching (sf6) Top gate layer (713) Cerium oxide (SiOx) BOE wet film (714) Titanium oxide CTiOx) Dry etching (Cl2) or wet etching (Hydrogen Peroxide) Final etch Etching Molybdenum (Mo) PAN Wet Etching or Gas Etching (XeF2) Table VIII 1357348 Selecting Two Project Materials Etching Mode (etch mode) Lifting Layer (703) Amorphous Germanium (a-Si) Dry Etching (Cl2) Support layer (705, 712) Cerium oxide (SiOx) BOE wet 1 Sacrificial layer (707, 710) Amorphous (a-Si) (CI2) Protective layer (7〇9) Steel (Cu) Etching of amorphous crucibles (a-Si) by wet etching of support grooves (210) using aqueous solution of nitric acid (hno3) or ammonium persulfate (APS) ) and yttrium oxide (SiOx) high-power dry etching (C12+SF6) support groove flanks (212) etching etching amorphous germanium (a-Si) C12 rich low-power dry etching or gas etching (XeF2) sidewall gate Area (500) etching etching amorphous germanium (a-Si) and yttrium oxide [SiOx) high power dry etching (ci2+sf6) top gate layer (713) yttrium oxide (SiOx) B〇E wet etch film (714 Titanium oxide (TiOx) dry name ((3⁄4) or wet etching (Hydrogen Peroxide') final etching (final etch) money engraved amorphous stone eve (a-Si) gas residual rvec_, -----2)

Table 9

26 1357348 Item Selection. Lifting layer (703) Support layer (705, 712) Sacrificial layer (707'710) Protective layer (709)

Etch mode — — — — PAN wet or dry etching (C12/SF6)

BOE wet etching using a nitric acid aqueous solution (hno3) or ammonium sulfate (Ammonium Persulfates, APS) for wet aphid engraving support groove (210) 14 etching cerium oxide (SiOx) and amorphous germanium (a-Si) high power The dry name of the engraved (C12+SF6) support groove flanks (212) etching etched yttrium oxide (SiOx) BOE wet etched sidewall gate (500) etching etched yttrium oxide (?iOx) and amorphous (a- Si) High power dry etching (ci2+sf6) Top gate layer (713) Thin film (714) Titanium oxide 〇ΠΟχ) Dry etching (Cl2) Dry surname (C 〖2) or wet surne (Hydrogen Peroxide) Last money Final etch Etching yttrium oxide (SiOx) and molybdenum (Mo) _ Table 10 first BOE wet etching and then pAN wet rice engraving 27 · _ ... - a ' -- _ Select four project material surname way (etch Mode) Lifting layer (703) Molybdenum (Mo) Dry etching (sf6) Support layer (705, 712) Aluminum alloy (A1 Alloy) Wet etching (H3P〇4) Sacrificial layer (707, 710) Molybdenum (Mo) Dry etching ( Sf6) protective layer (709) copper (Cu) using a nitric acid aqueous solution (hno3) or ammonium sulfate (Ammonium Persulfates, APS) for wet aphid engraving support groove (210) etching method to turn over (Mo) and Alloy high power dry etching (C12+SF6) Support body groove side (212) etching method etching molybdenum (Mo) gas etching (XeF2) sidewall gate area (500) etching method etching molybdenum (Mo) and aluminum alloy high power Dry etching (C12+SF6) Top gate layer (713) Aluminum alloy (AI Alloy) Wet etching (Η3Ρ04;) Thin film (714) Titanium oxide (TiOx) Dry etching (Cl2) or wet etching (Hydrogen Peroxide) Final etching (final Etch) Etching molybdenum (Mo) gas etching (XeF2) 1357348 Table Η - Select five items of material etch mode Lifting layer (703) Tantalum nitride (SiNx) Wet etching (dilute HF) Support layer (705, 712) Turning (Mo) PAN wet etching sacrificial layer (707, 710) tantalum nitride (SiNx) wet etching (dilute HF) protective layer (709) copper (Cu) using aqueous nitric acid (hno3) or ammonium sulfate (Ammonium Persulfates, APS) Wet worm inscribed support groove (210) etched tantalum nitride (SiNx) and molybdenum (Mo) High power dry etching (cf4+sf6) Support groove flank (212) etching etching Tantalum nitride (SiNx) Wet money etch (dilute HF) sidewall gate region (500) etching etched tantalum nitride (SiNx) and molybdenum 〇 VIo) high work Dry etching (cf4+sf6) top gate layer (713) molybdenum (Mo) PAN wet cut film (714) titanium oxide (TiOx) dry etching (α2) or hydrogen etching (finogen etch) final etching (final etch) etching Tantalum Nitride (SiNx) Wet Etching (Dilute HF) 1357348 Table 12 29 1357348 Selecting six items of material etch mode Lifting layer (703) Turning (Mo) pAN wet etching support layer (705, 712) Nitriding矽(SiNx) wet ii (dilute HF) sacrificial layer (707, 710) molybdenum (Mo) PAN wet etching protective layer (709) steel (Cu) using nitric acid aqueous solution (hno3) or ammonium sulfate (Ammonium Persulfates, APS) Wet surname support groove (210) etching method etching molybdenum (Mo) and tantalum nitride (SiNx) high power dry etching (cf4 + sf6) support groove side wing (212) etching method etching molybdenum (Mo) PAN Wet-etched sidewall gate region (500) etching molybdenum (Mo) and tantalum nitride (SiNx) high-power dry etching (cf4+sf6) top gate layer (713) tantalum nitride (SiNx). wet etching (dilute HF) Thin film (714) Titanium oxide CTiOx) Dry rice engraving (CD or wet etch (Hydrogen final etch ------- Etching molybdenum (Mo) _feroxide) _ PAN wet etching In the manufacturing method adopted in the second embodiment, the bottom opening area will form the top gate 11〇 in the second, third and fourth figures, and the top opening area 300 will form a second In the third and fourth figures, the bottom gate i 2 q, the area will form the second, third, and fourth figures of the side wall just:: Miscellaneous:: into the second, third, and the middle of the branch (four) 'In addition' these support body regions 20 (M system is located in the side wall closed area 5〇〇 intersection r = up to the conductor process technology to make this nano-level _ easy to unscaled transition fence production and rapid manufacturing 30 1357348 This nanometer filter structure. The thickness of each film layer can also be effectively controlled, and the thickness of each film layer can be adjusted according to actual needs. The control of the thickness of the sacrificial layer can further determine the filtration level of the filter material structure. The micro-scale top and bottom gates provide a micron-level initial filtration of the incoming airflow, which extends the life of the filter and material. The multi-layered barrier is designed to increase the opening ratio of the filter material, allowing the user to easily inhale or exhale through the filter. Forming a film on the surface of the filter material to decompose organic matter is more resistant to or killing viruses and bacteria. The invention has been described above in terms of the preferred embodiments thereof, and it is understood by those skilled in the art that the present invention is not intended to limit the scope of the invention. It should be noted that variations and permutations that are equivalent to the embodiments are intended to be within the scope of the present invention. Therefore, the scope of protection of the present invention is defined by the scope of the patent application. BRIEF DESCRIPTION OF THE DRAWINGS • The first figure is a schematic cross-sectional view of an embodiment of the nanofiltration passage of the present invention in one embodiment. The second figure is a schematic cross-sectional view of another embodiment of the nanofiltration passage of the present invention. The third figure is a schematic view of the structure of the nano-scale filter material in one embodiment of the present invention. Figure 4 is a perspective view showing the structure of a nano-sized filter material in another embodiment of the present invention. The fifth picture shows the structure of the nano-scale filter material shown in the third and fourth figures. 31 to 7348

ο The sixth to eleventh figures are the process steps of the nano-scale filter structure process in a section of the production process. The structure of the filter material is shown in Fig. 12 as a section of the nanometer with five filtration channels. The second step to the Γ10 is the process step of the nano-scale filter structure. Divided into sections. The U-level filter material structure of the U-pass channel number is widened and the schematic diagram is widened. · In the first example, the width of the side opening channel in the bottom opening area [main component symbol description] no top gate. 112 top opening 120 bottom gate 122 bottom opening 130 support body 140 side wall gate 142 filter gate block 200 support body area 21〇 support Body groove 211 filler body 212 support body flank

Groove 32 1357348

300 top open area 400 bottom open area 500 side wall 601 base 603 lift layer 605a first support layer 605b second support layer 605c third support layer 605d fourth support layer 605e fifth support layer 607a first sacrificial layer 607b Two sacrificial layer 610 top gate layer 611 film 701 substrate 703 lift layer 705a first support layer 705b second support layer 705c third support layer 705d fourth support layer 705e fifth support layer 707a first sacrificial layer 707b second sacrificial layer 709 Protective layer 33 1357348 710a First channel sacrificial layer 712a First channel support layer 712b Second channel support layer 712c Third channel support layer 712d Fourth channel support layer 713 Top gate layer 714 Film 720 Photoresist layer

d 1 spacing d2 spacing w 1 spacing w2 spacing AF airflow

AA' bottom gate section line BB' top gate section line CC' side wall gate section line X location 34

Claims (1)

J48 Seven patent application scope: 1. A nanometer filter material structure for breathing, comprising: a top gate having a plurality of top openings; π , , parallel to the gate and having a plurality of bottom openings 4 2 bottom. The opening and the top opening are offset from each other; the number _(four) is located between the _ door and the bottom (four) and is open at a top opening and a bottom opening, and a plurality of filter grids of each door and the gate are formed and formed Multiple over-tops: Two sides =: The system is located between the top f(10) and the bottom gate and is located at 2. For example, the channel system has a channel height of 3 (9) nm or less. The nano-scale coffin structure described in the department mouth and the ^^广#, wherein the sides of the top bottom opening have a length on a micrometer scale. The system described in the third paragraph of the stipulated patent scope is located at the bottom of the slab. The bottom of the sluice gate is 4. The surface also contains a core-decomposed seam-film. 5. If the scope of the patent application is included in the i-th building, the body is filled. The material of each of them is the polymer of the fifth body of the patent application. The structure of the nanostructured filter material of the filling structure, the nano-scale coffin at the second: number == zone per f bottom opening area, a plurality of side i teeth IZ mother The sidewall lands are adjacent to a top open region 35 1357348 and a bottom open region, the support regions being located at the intersection of the two sidewall gate regions, comprising the steps of: (A1) forming a pattern on a substrate a lifting layer; (A2) forming a patterned first support layer on the portion of the lifting layer and the portion of the substrate such that the bottom opening regions do not have the first supporting layer; (A3) at the bottom Forming a first sacrificial layer on the lift layer of the open region, and forming a first sacrificial layer on the first support layer of the top open region and the sidewall spacers; (A4) the sidewall spacers and the Forming a second support layer in the support region; (A5) forming a patterned second sacrificial layer on the top open regions, the bottom open regions, and the sidewall gate regions; (A6) a bottom opening area and a sacrificial layer of the topmost layer of the side wall gate areas And forming a top gate layer on the topmost support layer of the support regions; (A7) removing the lift layer and all the sacrificial layers; and (A8) removing the substrate; wherein each of the sacrificial layers The thickness is formed to be less than or equal to 300 nanometers. 8. The manufacturing method according to claim 7, wherein in the step (A2), the top opening area and the side opening areas of the bottom opening area are provided by patterning of the first support layer The length of the micrometer scale. 9. The manufacturing method according to claim 7, wherein in step (A4), 36 1357348 is further 匕3, and the side wall of the far top opening L sentence and the bottom opening area have S side wall brakes Area.囷1r疋10. If the scope of the patent application is 7th, the method further includes a step (A5 1} 彳 ^ ^ method, where f is in step (A5), and the steps L (A4) and (A5) are Forming a sacrificial layer of the summer sigh and a sacrificial layer of the plurality of layers. 11. := The manufacturing method described in item 7 of the benefit range, wherein the step (A6) is further included in the step s-step (A6.1): a method for manufacturing a nano-scale filter material structure, wherein the nano-scale filter material comprises a plurality of top open regions, a plurality of bottom open regions, and a plurality of sidewall gate regions, and a film for decomposing a film of organic matter. a plurality of branch body regions, each side wall idle area is adjacent to a top open area and a bottom open area, and the support body areas are located at the intersection of the two side wall closed areas, and the following steps are included: (B1) Forming a patterned lift layer on a substrate; (B2) = partially forming the lift layer and the portion of the substrate to form a patterned first support layer such that the bottom open regions do not have the first support layer (B3) forming one of the patterning in the bottom opening area, the top opening areas, and the side wall areas a sacrificial layer; (B4) forming a patterned second support layer on the sidewall gate regions and the support regions; (B5) the top open regions, the bottom opening regions, and the sidewall closed regions And forming a second sacrificial layer in the support regions; (B6) forming a third support layer on the top open π regions, the bottom open regions, the sidewall closed regions 37 1357348 and the support regions; (B7) forming a protective layer on the top open areas, the bottom open areas, the side wall lands, and the support areas; (B8) etching the support areas and removing at least the The three support layers respectively form a support groove; (B9) laterally etching in the support grooves and removing a portion of the sacrificial layer to form a plurality of support side groove grooves; (B10) Filling the support grooves and the support side groove grooves to form a plurality of filler bodies; (Bl 1) etching the top opening regions and the bottom opening regions and removing at least the third support layer (B12) in the top open areas, the bottom open areas, the The sidewall gate region and a portion of the support regions form a patterned first channel sacrificial layer; (B13) forming a top gate layer in the bottom opening region, the sidewall spacer regions and the support regions; B14) removing the lift layer and all the sacrificial layers; and (B15) removing the substrate; wherein each of the sacrificial layers is formed to a thickness of less than or equal to 300 nm. 13. As claimed in claim 12 In the manufacturing method, in the step (B2), the top opening regions and the side openings of the bottom opening regions have a length of a micrometer scale by patterning of the first support layer. 14. The manufacturing method of claim 12, wherein the step (B4) 1357348 further comprises defining the sidewall opening regions and the periphery of the bottom opening regions. 15. The manufacturing method according to claim 12, wherein the step (B6) further comprises a step (B6-1): repeating the steps (B5) and (B6) sequentially to form a plurality of layers The sacrificial layer of the support layer and the plurality of layers. 16. The manufacturing method according to claim 15, wherein in the step (B6-1), the layer finally formed is a sacrificial layer. 17. The manufacturing method of claim 12, wherein after the step (B12), the method further comprises: (B12-1) forming a patterned first channel in the sidewall gate regions and the support regions a support layer; and (B12-2) sequentially repeating steps (B12) and (B12-1) to form a channel layer of the plurality of layers and a channel sacrificial layer of the plurality of layers, and the resulting layer is a channel Sacrifice layer. 18. The manufacturing method according to claim 12, further comprising a step (B13-1) after the step (B13): forming a film for decomposing the organic material on the top gate layer. 39