TWI357133B - - Google Patents

Download PDF

Info

Publication number
TWI357133B
TWI357133B TW097102416A TW97102416A TWI357133B TW I357133 B TWI357133 B TW I357133B TW 097102416 A TW097102416 A TW 097102416A TW 97102416 A TW97102416 A TW 97102416A TW I357133 B TWI357133 B TW I357133B
Authority
TW
Taiwan
Prior art keywords
rectifying
base
wafer
terminal structure
collar
Prior art date
Application number
TW097102416A
Other languages
Chinese (zh)
Other versions
TW200933825A (en
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to TW097102416A priority Critical patent/TW200933825A/en
Publication of TW200933825A publication Critical patent/TW200933825A/en
Application granted granted Critical
Publication of TWI357133B publication Critical patent/TWI357133B/zh

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto

Landscapes

  • Rectifiers (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)

Description

1357133 e -xt 九、發明說明: 【發明所屬之技術領域】 本發明係有關一種整流晶片端子構造’尤指一種應用於功率整流器的 整流晶片端子構造。 【先前技術】 一般所指之整流端子,係專門配置於汽車發電機之電極上,可將交流 電轉為直流電,此種端子係設有一平台,於該平台上置有一錫片,再將一 晶片置於該錫片上’待錫片受熱熔固後’該晶片即能被銲固於平台上,最 後再以塑膠或樹脂順著端子的圓周加以封裝。1357133 e -xt IX. Description of the Invention: Field of the Invention The present invention relates to a rectifying wafer terminal structure, particularly a rectifying wafer terminal configuration applied to a power rectifier. [Prior Art] Generally referred to as the rectifier terminal, it is specially configured on the electrode of the automobile generator to convert the alternating current into direct current. The terminal is provided with a platform, and a tin piece is placed on the platform, and then a wafer is placed. Placed on the tin sheet 'after the tin sheet is heat-sealed', the wafer can be soldered to the platform and finally encapsulated with plastic or resin along the circumference of the terminal.

傳統整流端子如US6060776的「Rectifier diode」,其主要具備一美座 該基座具有-平台,該平台固設-半導體晶片以支設—引線,且^基 座設有-護套’並灌注-封裝材料而將該平台、該半導體晶片等穩固於二 護套内之空間,當該整岐極管壓人到整流板中時,該基座與該護套相接 處易受力而變形,因此降低整流二極管的使用壽命;為改善上述缺失,另 如US20070105454的「diode」’係於基座與護套間設置一區段,使二極管 壓入整流板時,得具有一緩衝空間而避免該基座變形。 吕 另外,又如 US6667545 的「Rectiflerdi〇dewithimpr〇vedmeansf〇r tension rdief of the _ectedheadwire」,主要包含一基座,該基座The conventional rectifying terminal is a "Rectifier diode" of US6060776, which mainly has a beautiful base. The base has a platform, the platform is fixed with a semiconductor wafer to support the lead, and the base is provided with a sheath and is poured. Encapsulating the material and stabilizing the platform, the semiconductor wafer, and the like in the space inside the second sheath. When the whole diode tube is pressed into the rectifying plate, the base and the sheath are susceptible to deformation and deformation. Therefore, the service life of the rectifier diode is reduced; in order to improve the above-mentioned deficiency, another "diode" of US20070105454 is provided with a section between the base and the sheath, so that when the diode is pressed into the rectifier, it has a buffer space to avoid The base is deformed. In addition, as in US6667545, "Rectiflerdi〇dewithimpr〇vedmeansf〇r tension rdief of the _ectedheadwire" mainly includes a pedestal, the pedestal

-平台以支魏設-半«晶片’該半導體晶片上設置—引線,且該平二 具有-周緣部並延設-環部,其中,該環部及該周緣部分別糾線的中二 ^成-夾角α、α’ ’夾角α係大於夾角α,,使該半導體晶片周圍形成一絕 緣區^ 、然,上述各習知技術雖都達·流之效,但實壯仍存在—些缺 上述各習知技術的護套其内直於該基座的平面,當封二、 m脫落的現象,且用㈤整流二極體的平台其周緣部呈環連 續性配置,故使用時該基座容易相對該封裝材料旋轉。衣狀連 【發明内容】 5 明 7133 基座相對封裝材料旋轉。 為達上述目的,本發明提出一種整流晶片端子構造,其主要包含 座、-整流晶H電元件及—套環,該底座内部具有—喊平梦 設周緣設有-麟狀絲流W,該導電元件具有設置 曰°、 =基部,該基部延伸出-緩衝區段,而該套環裝設於 内部容設-封裝材料’其中,該組裝平 ;;&緣並於 ,且該組裝平台與該間隔區段底部 少勾;=間=段 兩端緣之面積係與其内緣任一截面之面積^同:卡勾和此外,该套環 本發明的另一目的,在於強化該導雷开杜 =有緩衝區段,藉以防止當外力施加於該“二 【實施方式】 有關本伽之詳細及技_容,魏合0式說明如下. 請參閱『圖卜圖2.卜圖2_2及圖3]』戶标,麵本發立體外觀 ,、其 齡賴;如_示,本發明___子構造 兮套产40^ 一底座1〇、一整流晶片2〇、一導電元件30及一套環如; '"套%iG兩端緣之_係與其崎任—_之_不同,使 凝固後不致脱離該套環4〇,在本發明的圖式實施^,該套 衣40兩%緣之面積係小於其内緣任一截面之面積(如圖3 ^兩端緣之面積更可大於其内緣任一截面之面積(如圖3领示),且該套 tr具有fr結構,更包含—種斜面設計(圖中未示);該底座10内 =系具有—組裝平台u,馳裝平台u於巾錄置 ^裝設·“ 2G,雜_ 2G周_—節^ ^缝顧緣部21可為—厚度略大於該魏⑼2Q之·賴,用以形 緣巴^避免雜流晶片2G產生短路,另,該組裝平台11與該底座10内 緣“出-間隔區段14 ’用以防止水氣沿著内壁渗人,亦可防止 造成該整流晶片%破裂,且該組裝平台11與該間隔區段14底 狀間狄有至少-卡勾部13」本發明圖式中,該卡勾部13可為複數分離配 1357133 1' 置於該組裝平台11與該間隔區段14底部之間,興 該封裝材料42不致脫離,且使該底座10不致相裝材料使 ,該導電元件30係具有-基部31,且該基部31之―側設二42產生旋轉 構32以連接該整流晶片20,如是構成本發明整流晶片端土 —凸點架 録,顧該整_ 2G及該導電树30 _二凸點ϊ構32依序 祕而叠設於該組裝平台11的該第-凸點架構12, 序 座10以對應螺紋或黏合之方式相結合,復以該封裝材料似认 部’待該封裝材料42固化後即形成該整流晶片端子構造之成。衣40内 環40與該座體H)採分離設計,令本一月於銲錫過程中可具有 1 交大=套 空間,並且節省製程時間;透過該第一、二凸點 、呆乍 晶片20之二側而區隔出對應之空間,用以避免 目接於該整流 使該絕緣部21破裂或麵而損壞之情事,而;基抑另== ^段33,當外力介入時可提供一緩衝抗振之效果’避免該整流、因 而藉由該套環4G兩端緣之面積係小於其内緣任一截面之 面,該卡勾部13呈自軸心向外傾斜之結構,使該封裝材料42限位 於该套環40㈣不致脫離,耕,該底座1Q設有第 套環明設有第4人斜角41,該第—、二導入斜角16、41係角用以6導= .晶片端子餅接物相接設之角度,該底座另設有—握持部Μ,持/ 部15環設複數間隔排列之凸紋。 ^据符 本發明的具體實施樣財,該套環仙係以其外緣接設於該底座狀 3所示h或’該套環4〇以其内緣與該底座1〇之外緣相結合 (·所不)’而該導電讀30的該緩衝區段33可為排列緊密之螺紋, 或以-距離間隔排列之螺紋形成另—緩衝區段33a (如圖4所示),_, 該缓衝區段33a間隔排列之距離其外徑係小於該導電元件3() ^ 力施於該導電元件30時,可透過該緩衝區段33、紐提供胁: .« 2〇 ; , ^6, 絕緣部21更可為—_鱗,且贿裝平台u設有㈣絕轉定位的至 少-阻流槽17 ’觸轉係填充_導電元件3()及驗裝平台u之間而 包覆該整流晶片2G之周緣,避免該整流晶片2()形成短路之現象。 7 1357133 綜上所述僅為本發明的較佳實施例而已,並非用來限定本發明之實施 範圍。即凡依本發明申請專利範圍之内容所為的等效變化與修飾,皆應為 本發明之技術範疇。 1357133 .» ' 【圖式簡單說明】 圖1,為本發明的立體外觀示意圖。 圖2-1,為本發明的結構分解示意圖。 圖2-2,為圖2-1的局部放大剖面示意圖。 圖3-1及圖3-2,為本發明的剖面示意圖。 圖4,為本發明的另一實施態樣示意圖。 圖5,為本發明的再一實施態樣示意圖。 圖6-1,為本發明的又一實施態樣示意圖。 圖6-2,為圖6-1的局部放大示意圖。 φ 【主要元件符號說明】 10 ..............底座 11 ..............組裝平台 12 ..............第一凸點架構 13 ..............卡勾部 14 ..............間隔區段 15 ..............握持部 16 ...............第一導入斜角 17 ..............阻流槽 20 ..............整流晶片 21 ..............絕緣部 30 ..............導電元件 31 ..............基部 32 ..............第二凸點架構 33、33a...........緩衝區段 40 ..............套環 41 ..............第二導入斜角 42 ..............封裝材料 9- the platform is provided with a lead on the semiconductor wafer, and the flat has a peripheral portion and a ring portion, wherein the ring portion and the peripheral portion respectively correct the line The angle α between the angles α and α′′ is greater than the angle α, so that an insulating region is formed around the semiconductor wafer. However, although the above-mentioned conventional techniques all have the effect of flow, there are still some defects. The sheath of each of the above-mentioned prior art is disposed in a plane perpendicular to the plane of the susceptor, and when the sealing of the second and the m is detached, and the peripheral portion of the platform of the (5) rectifying diode is continuously arranged in a ring, the base is used. The seat is easily rotated relative to the package material.衣状连 [Summary] 5 Ming 7133 The base rotates relative to the packaging material. In order to achieve the above object, the present invention provides a rectifying wafer terminal structure, which mainly comprises a seat, a rectifying crystal H electric component and a collar, and the inside of the base has a sinusoidal filament flow W. The conductive element has a set 曰°, = base, the base extends out of the -buffer section, and the collar is mounted in the inner containment-encapsulation material ', the assembly is flat; the & edge and the assembly platform There is less hook at the bottom of the interval section; = = the area of both ends of the section is the same as the area of any section of the inner edge thereof: the hook and, in addition, the collar is another object of the invention to strengthen the mine Open Du = There is a buffer section to prevent external force from being applied to the "two" implementation method. The details and techniques of the gamma are described below. Please refer to the figure "2" and Figure 2_2. Figure 3] "Household, the face of the stereoscopic appearance, and its age; as shown, the invention ___ substructure 兮 set 40 ^ a base 1 一, a rectifying chip 2 〇, a conductive element 30 and A set of rings such as; '" sets the edge of the %iG _ system is different from its sashimi-_, so that it does not fall off after solidification From the collar 4, in the embodiment of the present invention, the area of the two-part edge of the garment 40 is smaller than the area of any cross section of the inner edge (as shown in Figure 3, the area of the two end edges may be larger than The area of any section of the rim (as shown in Figure 3), and the set tr has a fr structure, and further includes a bevel design (not shown); the base 10 has an assembly platform u, a gallop platform u in the towel recording ^ installation · "2G, miscellaneous _ 2G week _ - section ^ ^ seam edge portion 21 can be - thickness slightly larger than the Wei (9) 2Q of the Lai, used to shape the edge of the bar ^ to avoid the messy chip 2G A short circuit is generated. In addition, the assembly platform 11 and the inner edge of the base 10 "outlet-spaced section 14" are used to prevent moisture from infiltrating along the inner wall, and also prevent the rectifier wafer from being broken, and the assembly platform 11 and The spacing section 14 has at least a hook portion 13 in the bottom of the drawing. In the drawing of the present invention, the hook portion 13 can be a plurality of separate fittings 1357133 1 ' placed at the bottom of the assembly platform 11 and the spacing portion 14 Therefore, the encapsulating material 42 is not detached, and the base 10 is not made of a phase-filling material. The conductive member 30 has a base portion 31, and the base portion 31 ― Side arrangement 2 42 generates a rotating structure 32 to connect the rectifying wafer 20, if it constitutes the rectifying wafer end soil-bumping frame of the present invention, taking care of the whole _ 2G and the conductive tree 30 _ two-bump ϊ structure 32 And the first bump structure 12 stacked on the assembly platform 11 , the sequence block 10 is combined in a corresponding thread or adhesive manner, and the package material is similar to the portion of the package material to be formed after the package material 42 is cured. The wafer terminal structure is formed. The inner ring 40 of the garment 40 and the seat body H) are separated from each other, so that the first month of the soldering process can have 1 cross-size=set space, and save the processing time; through the first and second bumps And staying on the two sides of the wafer 20 to separate the corresponding space, in order to avoid the fact that the rectification causes the insulating portion 21 to be broken or damaged by the surface, and the base is inhibited by another == ^ segment 33, when the external force In the intervention, a buffering anti-vibration effect can be provided to avoid the rectification, and thus the hook portion 13 is inclined outward from the axis by the area of the end edges of the collar 4G being smaller than the surface of any section of the inner edge thereof. The structure is such that the encapsulating material 42 is limited to the collar 40 (four) without detachment, tilling, the bottom 1Q is provided with a first set of rings with a 4th angle of inclination 41, and the first and second lead angles are 16 and 41 are used for 6 guides. The wafer terminal is connected to the angle of the joint, and the base is separately provided. There is a grip portion Μ, and the holding portion 15 is provided with a plurality of ribs arranged at intervals. According to the specific implementation of the present invention, the collar is connected to the base 3 by the outer edge thereof, or the collar 4 has its inner edge and the outer edge of the base 1 The buffer segment 33 of the conductive read 30 may be a closely packed thread, or may be arranged at a distance-distorted thread to form another buffer segment 33a (as shown in FIG. 4), _, The buffer segments 33a are spaced apart from each other by an outer diameter smaller than the conductive member 3 (). When the force is applied to the conductive member 30, the buffer segment 33 and the button can be provided with a threat: .« 2〇; , ^ 6, the insulating portion 21 can be more - _ scales, and the bribe platform u is provided with (4) at least the blocking position of the at least - choke groove 17 'tact system filling _ conductive element 3 () and the mounting platform u The periphery of the rectifying wafer 2G is covered to prevent the rectifying wafer 2 from forming a short circuit. The above is only a preferred embodiment of the present invention and is not intended to limit the scope of the present invention. That is, equivalent changes and modifications constituting the scope of the patent application of the present invention should be the technical scope of the present invention. 1357133 .» ' BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a schematic perspective view of the present invention. Figure 2-1 is a schematic exploded view of the structure of the present invention. 2-2 is a partially enlarged cross-sectional view of FIG. 2-1. 3-1 and 3-2 are schematic cross-sectional views of the present invention. Figure 4 is a schematic view of another embodiment of the present invention. Fig. 5 is a schematic view showing still another embodiment of the present invention. 6-1 is a schematic view of still another embodiment of the present invention. Figure 6-2 is a partially enlarged schematic view of Figure 6-1. Φ [Description of main component symbols] 10 ..............Base 11 ..............Assembling platform 12 ......... ..... first bump structure 13 .............. hook portion 14 ........... interval section 15 ... ........... grip portion 16 ...............first lead angle 17 .............. Barrier groove 20 ..............Rectifier wafer 21 . . ....... Insulation 30 ............ .. Conductive Element 31 .............. Base 32 .............. Second Bump Structure 33, 33a....... ....buffer segment 40 .............. collar 41 .............. second lead angle 42 ..... .........Encapsulation material 9

Claims (1)

1357133 申請專利範圍: 種整流晶片端子構造,其包括: 部 -底座,其内部具有—組裝平台’該組裝平台與該底座内緣區分出 間隔區段’且触裝平減關祕段底部之間設有至少 -整流晶片,係裝設於該組裝平台,該整流晶片於周緣緣 9 一導電元件’具有設置於該整流^上的—基部 緩衝區段; 签收1甲出 -套環,裝設於該底座之端緣並於内部容設—封裝材料, 端緣之面積係與其内緣任一截面之面積不同。 人 2. 如申請專利細第i項所述的整流晶片端子構造,其中該 數分離配置於該組裝平台與該間隔區段底部之間。 丨付馬複 3. ^申請專利細第i項所述的整流晶片端子構造,其中該 與該整流晶片連接之一第一凸點架構。 褒十口叹有 4. 如申請專利範圍第1項所述的整流晶片端子構 整流晶片連接之—第二凸齡構。 知財該基部設有與該 5. 如申請專1賴频錢⑼辭觀, 厚度略大於該整流晶片之封裝玻璃。 4緣縣為- 6. 如申請專利範圍第丨項所述的整流晶片 緣膠’ «料絲將親师故 填充於該導電元件及該組裝平台之間而包覆該整流晶舰緣膠係 7. 如申請專利範圍第丨項所述的整流晶片端子構 1 、。 排列緊密之螺紋。 、段可為 8. 如申請專利範圍第i項所述的整流晶片端子構造,其中 一距離間隔翻之螺紋,該距離之外#係小於該導電元^㈣區段可為 9. 如申請專利範圍第1項所述的整流晶片端子構^,其之外徑。 面積係大於其内緣任-截面之面積。 ’、該套環兩端緣之 10.如申請專利範圍第丨項所述的整流晶片端子構造,其 面積係小於其内緣任一截面之面積。 &、該套環兩端緣之 1357133 其中該套環内緣為狐 11.如申請專利範圍第1項所述的整流晶片端子構造, 面。 12.如申請翻範圍第1項所述的整流晶片軒構造,其中該套環内緣為 面。 ^ 13.如申請專利範圍第1項所述的整流晶片端子構造,其中該底座設有第— 導入斜角。 14·如申請專利範圍第1項所述的整流晶片端子構造,其中該套環設有第二 導入斜角。1357133 Patent application scope: A rectifying wafer terminal structure, comprising: a portion-base having an assembly platform therein, the assembly platform distinguishing a spacing portion from the inner edge of the base and contacting the lower portion of the touch-off section Providing at least a rectifying chip mounted on the assembly platform, the rectifying chip having a conductive element 'having a base buffer section disposed on the rectifying portion at a peripheral edge 9; signing a 1-outlet-loop, mounting The encapsulating material is accommodated in the inner edge of the base, and the area of the end edge is different from the area of any cross section of the inner edge. 2. The rectifying wafer terminal construction of claim ii, wherein the number is discretely disposed between the assembly platform and the bottom of the spacer section. 3. The rectifying wafer terminal structure described in the patent application, wherein the first bump structure is connected to the rectifying wafer.褒 口 4. 4. 4. 4. 4. 4. 4. 4. 4. 4. 4. 4. 4. 4. 4. 4. 4. 4. 4. 4. 4. 4. 4. 4. 4. 4. 4. 4. 4. 4. 4. 4. 4. 4. 4. 4. 4. 4. 4. 4. 4. 4. 4. 4. 4. 4. 4. 4. 4. 4. 4. 4. 4. 4. 4. 4. 4. Zhicai The base is provided with the 5. If the application is dedicated to the frequency (9), the thickness is slightly larger than the package glass of the rectifier wafer. 4 Yuanxian County - 6. Rectifier wafer edge glue as described in the scope of the patent application section «The wire will be filled between the conductive element and the assembly platform to cover the rectifier crystal edge glue system. 7. The rectifying wafer terminal structure 1 as described in the scope of the patent application. Arrange the tight threads. The segment can be 8. The rectifying chip terminal structure according to the invention of claim i, wherein a distance is turned over the thread, and the distance is less than the conductive element ^ (4) segment can be 9. The rectifying wafer terminal structure according to the first item of the first aspect, wherein the outer diameter thereof. The area is larger than the area of any of its inner edges. The both ends of the collar are 10. The rectifying wafer terminal structure as described in the scope of the patent application, wherein the area is smaller than the area of any cross section of the inner edge thereof. & 1357133 at both ends of the collar, wherein the inner edge of the collar is a fox. 11. The rectifying wafer terminal structure described in claim 1 is a surface. 12. The rectifying wafer structure of claim 1, wherein the inner edge of the collar is a face. The rectifying wafer terminal structure of claim 1, wherein the base is provided with a first lead-in angle. 14. The rectifying wafer terminal construction of claim 1, wherein the collar is provided with a second lead angle. 15.如申請專利範圍第1項所述的整流晶片端子構造,其中該底座設有—握 持部,該握持部環設複數間隔排列之凸紋。The rectifying wafer terminal structure according to claim 1, wherein the base is provided with a grip portion, and the grip portion is provided with a plurality of ribs arranged at intervals. 1111
TW097102416A 2008-01-23 2008-01-23 Terminal structure of rectifier chip TW200933825A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
TW097102416A TW200933825A (en) 2008-01-23 2008-01-23 Terminal structure of rectifier chip

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW097102416A TW200933825A (en) 2008-01-23 2008-01-23 Terminal structure of rectifier chip

Publications (2)

Publication Number Publication Date
TW200933825A TW200933825A (en) 2009-08-01
TWI357133B true TWI357133B (en) 2012-01-21

Family

ID=44866069

Family Applications (1)

Application Number Title Priority Date Filing Date
TW097102416A TW200933825A (en) 2008-01-23 2008-01-23 Terminal structure of rectifier chip

Country Status (1)

Country Link
TW (1) TW200933825A (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI619566B (en) * 2015-08-06 2018-04-01 朋程科技股份有限公司 Manufacturing method and device of lead line structure of rectifier diode

Also Published As

Publication number Publication date
TW200933825A (en) 2009-08-01

Similar Documents

Publication Publication Date Title
CN107591420B (en) Sensor package structure
TWI364820B (en) Chip structure
US10600830B2 (en) Sensor package structure
US8748200B2 (en) Method for manufacturing LED package
TW201145484A (en) Etch-back type semiconductor package, substrate and manufacturing method thereof
TWI376778B (en) Package and fabricating method thereof
EP3267486A1 (en) Sensor package structure
TWI327359B (en) Stacked semiconductor package
TWI357133B (en)
JP2858166B2 (en) Semiconductor rectifier and full-wave rectifier using the same
JP6754419B2 (en) Power device for rectifier
TW201244178A (en) LED package and method for manufacturing the same
US20140097528A1 (en) Chip arrangements, a chip package and a method for manufacturing a chip arrangement
US8816372B2 (en) LED package having a covering portion made of silicon-titanate resin for sealing a joint and method for making the same
US6768188B2 (en) Semiconductor device
TWM420835U (en) Rectifier chip terminal
JPH04363031A (en) Semiconductor device
CN102148575B (en) Rectifier wafer terminal structure
TWI351745B (en) Semiconductor package and heat slug thereof
TW200824063A (en) Package assembly whose spacer has through hole
TWI304656B (en)
CN107564889B (en) Chip packaging structure and packaging method
TWI355066B (en)
TWM516229U (en) Rectifying diode and lead structure thereof
CN208460753U (en) A kind of flip chip packaging structure

Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees