TWI355801B - Dual power switch and voltage regulator using same - Google Patents

Dual power switch and voltage regulator using same Download PDF

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Publication number
TWI355801B
TWI355801B TW097111871A TW97111871A TWI355801B TW I355801 B TWI355801 B TW I355801B TW 097111871 A TW097111871 A TW 097111871A TW 97111871 A TW97111871 A TW 97111871A TW I355801 B TWI355801 B TW I355801B
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TW
Taiwan
Prior art keywords
power switch
dual
circuit
pmos
dual power
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Application number
TW097111871A
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English (en)
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TW200943712A (en
Inventor
Nien Hui Kung
Kwan Jen Chu
Chin Tsung Chen
Tzu Huan Chiu
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Richtek Technology Corp
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Priority to TW097111871A priority Critical patent/TWI355801B/zh
Priority to US12/378,494 priority patent/US8085014B2/en
Publication of TW200943712A publication Critical patent/TW200943712A/zh
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Publication of TWI355801B publication Critical patent/TWI355801B/zh

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Classifications

    • HELECTRICITY
    • H02GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02MAPPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M3/00Conversion of dc power input into dc power output
    • H02M3/02Conversion of dc power input into dc power output without intermediate conversion into ac
    • H02M3/04Conversion of dc power input into dc power output without intermediate conversion into ac by static converters
    • H02M3/10Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
    • H02M3/145Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
    • H02M3/155Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only
    • H02M3/156Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators
    • H02M3/158Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators including plural semiconductor devices as final control devices for a single load
    • H02M3/1584Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators including plural semiconductor devices as final control devices for a single load with a plurality of power processing stages connected in parallel
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K17/00Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/06Modifications for ensuring a fully conducting state
    • H03K17/063Modifications for ensuring a fully conducting state in field-effect transistor switches
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K17/00Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/12Modifications for increasing the maximum permissible switched current
    • H03K17/122Modifications for increasing the maximum permissible switched current in field-effect transistor switches
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K17/00Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/30Modifications for providing a predetermined threshold before switching
    • H03K17/302Modifications for providing a predetermined threshold before switching in field-effect transistor switches

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Dc-Dc Converters (AREA)
  • Electronic Switches (AREA)
  • Oscillators With Electromechanical Resonators (AREA)
  • Stand-By Power Supply Arrangements (AREA)
  • Continuous-Control Power Sources That Use Transistors (AREA)

Description

1355801 九、發明說明: 【發明所屬之技術領域】 本發明係有關一種雙功率開關與使用雙功率開關之電 源供應電路。 【先前技術】 電源供應電路(voltage regulator )包括線性電源供應電 路(linear regulator )、降壓式(buck converter )、升壓式(b〇ost converter )、升降壓式(buck-boost converter )、反壓式(inverter converter )、返馳式(fly-back converter )、交直流轉換式 (AC-DC converter)等。在上述各種電源供應電路中,都 必須使用功率開關。一般而言,如第1圖和第2圖所示, 功率開關或是單獨使用PMOS電晶體(第1圖之10)、或 疋單獨使用NMOS電晶體(第2圖之20)。當功率開關1〇 或20導通時,電流自輸入端vin流至輸出端v〇ut (視電源 供應電路的結構而定,此輸出端v〇ut不一定是電源供應電 路對負載電路的輸出端;在本說明書中,輸入端Vin與輸 出端Vout係分別指功率開關的兩端)。功率開關1〇或2〇 的操作係由控制電路15, 25所控制。在某些應用下,由於 NMOS功率開關20需要較南的閘極電壓,因此可能尚需搭 配電荷泉23來升壓’使控制電路25可讀得所需的較高 電壓。 上述習知技術的缺點在於:單獨使用pM〇s電晶體 時’其導it電阻較冑;單獨使帛购⑽電晶體時,功率耗 損較高。電路設計者須根據朗場合來摘使騎種電晶 5 體,而不能兼有兩者之長β 有鑑於以上缺點,本發明乃提出一種雙功率開關結構。 【發明内容】 的是針對先前技術之不足,提出一種 本發明之第一目 雙功率開關。 本發明之第二目的在提供-種電源供應電路。 為達上述之目的,從其中一個角度而言,本發明提供 了:種雙功率開關,包含:並聯之PM0S功率開關和繼os 功率關。觸8辨開關和NMqs功賴自 設的條件而操作’例如可根據雙功率關兩端壓差或Γ 功率開關之電流量而操作。 上述雙功相射,可更包含有第—和第二控制電 以刀別控制該PMOS功率開關和蘭〇8功率開關之操 。此外’雙功率開關中可更包含有判斷電路,以決 否致能第一或第二控制電路或兩者。 本發,提供了-觀壯輕功率_之電源供應 電路。 底下藉由對具體實施例詳加說明,當更容易瞭解本發 明之目的、技細容、特點及其所達成之功效。 【實施方式】 請參考第3圖所示之第—實施例’在本發明中係將 PMOS功率開關10和顧〇8功率開關2〇並聯,並選擇性
Vout+O.OOlV)不同,故比較器33宜使用磁滯比較器;若 兩者的比較基準相同’則可使用-般的比較器。此外須說 明的疋’電壓源34係為在概紅便於了解而繪示,代表— 廣義的等效電位差;事實上,並不—定需要設置一個實體 的電壓源34。例如,若在比較器33的輸人間,設計適當的 輸入電壓誤差值(1啊〇細她峨),即可等效達成電壓源 34的補償功能。 第3圖電路中,判斷電路30產生致能訊號的判斷方 式’亦可為:根據兩轉開關的電流量,來決定致能控制 電路15或25、或兩者。請參閱第4圖之另一實施例,設通 過PMOS功率開關1〇的電流量為Ip_,通過丽〇8功率 P开 1關20的電流量為Inm〇s,則判斷電路3〇分別接收有關 Ipmos和I_s之資訊’並根據該等資訊來決定是否發出致 能訊號。同樣地,騎電路30並不限於一定要發出兩個致 能訊號31,32,亦可只發出其一。此時假設令控制電路15 保持工作,並令PMOS功率開關1〇的導通電阻為】歐姆, NMOS功率開_ 20的導通電阻為〇1 _,則判斷方式例 如可為:當IPMOS>100mA時,發出致能訊號32致能控制 電路25,而當INMOS < 1〇 mA時,則停止致能控制電路25。 達成上述判斷功能的電路’例如可參閱第6圖,判斷 電路30中接收有_ IPM0S和之資訊,該等資訊例如為 Ipmos和Inmos之分數值(K1 · 1咖沉和K2 . Ινμ〇§)。該兩 電流分別電阻R5、R6轉換為電壓做,各別在比較器 35、36中與參考電壓Vrefl和Vref2相比較。比較器%之 8 1355801 比較結果表示IpMOS是否大於100 mA,而比較器36之比較 結果表示INM0S是否大於10 mA。兩比較器35、36之比較 結果經邏輯電路38進行邏輯運算:當IpM〇s大於1〇〇 ^ 時,邏輯電路38輸出高位準;當〗^^不大於1〇〇mA,而 I_s大於10 mA時’邏輯電路38仍輸出高位準;僅當Ιρ_ 不大於100 mA,而INM0S亦不大於1〇 nL^時,邏輯電路%
才輸出低位準。判斷電路30依此方式產生致能訊號32,輸 出至控制電路25。 以上所述僅為舉例說明,熟悉本技術者當可在本發明 的教導下,做各種變換,例如改變功率開關的導通電阻、 改變壓差或電流值的判斷基準等’而觸電路3G的硬體可 相應而改變,不予--詳述。 邳敉尕无刖孜術n%的儍钻足可在重負載時啟動 具有較低導通電_ NM〇S轉_ 2G,加速電流供應, 在輕負載時則關閉NMOS功率開關2()(與電荷幻,減低
能耗。因此’可兼具PMOS與顧〇s兩種功率開關之長, 使電路設計者更為便利。 第7圖與第8圖示出本發明之雙功率開關應用於降壓 切換式電源供應祕醜_。熟悉本技術者當可 電路中 ^如何將本發明之雙功糊關翻於其他型式的電源供應 、狄山‘在此不--繪示。 以上已針缝佳實_來說明本發明,唯以上所 者’僅係為使熟悉本技術者胁了解本發明_容而已, 並非用來限定本發明之制範圍;對於熟悉本 9 可在本發明精神内,立即思及各種等效變化。例如,本發 明不揭限於應用在閃光電容充電器中,亦可應用於任何形 式的充電器。又如,圖示所繪為獨立方塊的電路,並不一 定必須為獨立的電路,而可與其他電路合併,例如控制電 路15和25即未必需要為分開的兩個電路,而可合併為一 個電路。再如,圖示直接連接的各元件或電路方塊間,可 插入不衫響電路主要功能的電路或元件。故凡依本發明之 概念與精神所為之均等變化或修飾,均應包括於本發明之 申請專利範圍内。 【圖式簡單說明】 圖式說明: 第1圖與第2圖為先前技術之示意電路圖。 第3圖為示意電路圖,示出本發明的—個實施例。 第4圖為示意電路圖’示出本發明的另一個實施例。 第5圖為第3圖電路之更具體實施例。 第6圖為第4圖電路之更具體實施例。 電二:圖電發明之雙功率開關應用於降壓式 电你状馬电路的愿用例。 23電荷泵 25控制電路 3〇判斷電路 【主要元件符號說明】 10 PMOS電晶體 15控制電路 20 電晶體 1355801 31,32致能訊號 33比較器 34電壓源 35, 36比較器 38邏輯電路 R1-R6 電阻
Vin輸入端 Vout輸出端 Vrefl,Vref2參考電壓

Claims (1)

  1. 第0971丨丨87_雜職_ 十、申請專利範圍: 種雙功率開關,包含並聯之PM0S功率開關和讀0§ =率開關’其中當該雙鱗__壓差大於第一預定值 時’該NMOS功率開關啟動。 ’如申印專利範圍第1項所述之雙功率開關,其中當該雙 力^開關兩端壓差小於第二預定值時,該丽⑽功率開 關停止操作。 3. 如申4專利範圍第〖項所述之雙功率開關,其中該 PMOS功率開關保持操作。 4. 如申请專利範圍第i項所述之雙功率開關,更包含有第 和第二控制電路’以分別控制該PMOS功率開關和 NMOS功率開關之操作。 5. 如申請專利範圍第4項所述之雙功率關,更包含有判 斷電路,以決定是否致能第一或第二控制電路或兩者。 ^如申請專利範圍第5項所述之雙功率開關,其中該判斷 電路包括一比較器,該比較器根據該雙功率開關兩端之壓 差而產生比較結果。 7.如申請專利範圍第6項所述之雙功率開關,其中該比較 器為磁滞比較器。 & 一種雙功率開關,包含並聯之PM〇s功率開關和_〇8 功率開關,其中當通過該PM0S功率開關的電流量大於第 一預定值時,該NMOS功率開關啟動。 9.如申請專利範圍第8項所述之雙功率開關,其中當通過 該PMOS功率開關的電流量不大於第二預定值,且通過該 NMOS功率開關的電流量不大於第三預定值時,該nmos
    第09711丨87丨號申請案修正無劃線版 功率開關停止操作。 專利範圍第8項所述之雙功率開關,其中兮 PMOS功率開關保持操作。 、平該 π· 項所述之雙轉 12.如_料利細第〗〗項所述 ,電路’以決定是否致能第一或第二控制二二有 斷電t包^專利細12項所述之雙功率開關,其中該判 第比較器’將代表該PMOS功钱關電流量的訊號 與第一參考電壓比較; 〇第二比較器,將代表該NMOS功率開關電流量的訊 號與第一參考電壓比較;以及 邏輯電路,對第一與第二比較器的輸出進行邏輯運 算0 14. 一種電源供應電路,其使用如申請專利範圍第1至13 項所述之雙功率開關。 13
TW097111871A 2008-04-01 2008-04-01 Dual power switch and voltage regulator using same TWI355801B (en)

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TW097111871A TWI355801B (en) 2008-04-01 2008-04-01 Dual power switch and voltage regulator using same
US12/378,494 US8085014B2 (en) 2008-04-01 2009-02-17 Dual power switch with activation control and voltage regulator using same

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Application Number Priority Date Filing Date Title
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TW200943712A TW200943712A (en) 2009-10-16
TWI355801B true TWI355801B (en) 2012-01-01

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TWI419448B (zh) * 2010-12-02 2013-12-11 Richtek Technology Corp 適應性調整輸入之電源供應電路與電源供應方法
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US20090174388A1 (en) 2009-07-09
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