TWI350914B - Systems and methods of inspecting a sample's surface and systems and methods for identifying a defect - Google Patents

Systems and methods of inspecting a sample's surface and systems and methods for identifying a defect

Info

Publication number
TWI350914B
TWI350914B TW093123449A TW93123449A TWI350914B TW I350914 B TWI350914 B TW I350914B TW 093123449 A TW093123449 A TW 093123449A TW 93123449 A TW93123449 A TW 93123449A TW I350914 B TWI350914 B TW I350914B
Authority
TW
Taiwan
Prior art keywords
systems
methods
defect
identifying
inspecting
Prior art date
Application number
TW093123449A
Other languages
English (en)
Other versions
TW200526949A (en
Inventor
Jeffrey Alan Hawthorne
M Brandon Steele
Chunho Kim
David C Sowell
Original Assignee
Qcept Technologies Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Qcept Technologies Inc filed Critical Qcept Technologies Inc
Publication of TW200526949A publication Critical patent/TW200526949A/zh
Application granted granted Critical
Publication of TWI350914B publication Critical patent/TWI350914B/zh

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
    • G01N27/002—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating the work function voltage
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N33/00—Investigating or analysing materials by specific methods not covered by groups G01N1/00 - G01N31/00
    • G01N33/0095—Semiconductive materials

Landscapes

  • Chemical & Material Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Immunology (AREA)
  • Physics & Mathematics (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Pathology (AREA)
  • Electrochemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Food Science & Technology (AREA)
  • Medicinal Chemistry (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
  • Investigating Or Analyzing Materials By The Use Of Electric Means (AREA)
  • Analysing Materials By The Use Of Radiation (AREA)
  • Measurement Of Length, Angles, Or The Like Using Electric Or Magnetic Means (AREA)
  • Liquid Crystal (AREA)
  • Measuring Leads Or Probes (AREA)
TW093123449A 2004-02-03 2004-08-05 Systems and methods of inspecting a sample's surface and systems and methods for identifying a defect TWI350914B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US10/771,628 US7308367B2 (en) 2003-02-03 2004-02-03 Wafer inspection system

Publications (2)

Publication Number Publication Date
TW200526949A TW200526949A (en) 2005-08-16
TWI350914B true TWI350914B (en) 2011-10-21

Family

ID=34911306

Family Applications (1)

Application Number Title Priority Date Filing Date
TW093123449A TWI350914B (en) 2004-02-03 2004-08-05 Systems and methods of inspecting a sample's surface and systems and methods for identifying a defect

Country Status (7)

Country Link
US (1) US7308367B2 (zh)
EP (1) EP1711801B1 (zh)
JP (1) JP2007520721A (zh)
AT (1) ATE434178T1 (zh)
DE (1) DE602004021637D1 (zh)
TW (1) TWI350914B (zh)
WO (1) WO2005083407A1 (zh)

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7107158B2 (en) * 2003-02-03 2006-09-12 Qcept Technologies, Inc. Inspection system and apparatus
WO2007036985A1 (ja) * 2005-09-27 2007-04-05 Advantest Corporation 管理方法、及び管理装置
TWI289091B (en) * 2005-10-06 2007-11-01 Ind Tech Res Inst Apparatus for endpoint detection during polishing
US7659734B2 (en) * 2007-03-07 2010-02-09 Qcept Technologies, Inc. Semiconductor inspection system and apparatus utilizing a non-vibrating contact potential difference sensor and controlled illumination
US7900526B2 (en) 2007-11-30 2011-03-08 Qcept Technologies, Inc. Defect classification utilizing data from a non-vibrating contact potential difference sensor
US7752000B2 (en) * 2008-05-02 2010-07-06 Qcept Technologies, Inc. Calibration of non-vibrating contact potential difference measurements to detect surface variations that are perpendicular to the direction of sensor motion
FR2944873B1 (fr) * 2009-04-22 2011-05-13 Centre Nat Rech Scient Systeme pour la detection de complexes d'hybridation de sondes avec des ligands specifiques, et utilisations
US9097645B2 (en) 2013-08-23 2015-08-04 Kla-Tencor Corporation Method and system for high speed height control of a substrate surface within a wafer inspection system
TWI525317B (zh) * 2013-10-08 2016-03-11 國立清華大學 整合影像分析與資料挖礦之自動光學檢測缺陷影像分類方法
US9625557B2 (en) 2014-05-22 2017-04-18 Qcept Investments, Llc Work function calibration of a non-contact voltage sensor
US10969370B2 (en) * 2015-06-05 2021-04-06 Semilab Semiconductor Physics Laboratory Co., Ltd. Measuring semiconductor doping using constant surface potential corona charging
CN107073614B (zh) * 2015-10-30 2019-01-04 三菱电机株式会社 线放电加工机、线放电加工机的控制装置的控制方法及定位方法
US20200343116A1 (en) * 2016-10-22 2020-10-29 Matan LAPIDOT Mobile inspection system for the detection of defect occurrence and location
US11060993B2 (en) 2016-11-16 2021-07-13 3M Innovative Properties Company Suppressing thermally induced voltages for verifying structural integrity of materials
EP3542153A1 (en) 2016-11-16 2019-09-25 3M Innovative Properties Company Temperature-independent verifying of structural integrity of materials using electrical properties
US11255807B2 (en) 2016-11-16 2022-02-22 3M Innovative Properties Company Verifying structural integrity of materials
WO2018093906A1 (en) * 2016-11-16 2018-05-24 3M Innovative Properties Company Verifying structural integrity of materials using multiple current injection points and one or more current extraction points
EP3542155A4 (en) 2016-11-16 2020-08-26 3M Innovative Properties Company PLACEMENT OF ELECTRODES TO CHECK THE STRUCTURAL INTEGRITY OF MATERIALS
EP3555606B1 (en) 2016-12-16 2022-08-17 3M Innovative Properties Company Verifying structural integrity of materials using reference impedance
US10816495B2 (en) 2016-12-16 2020-10-27 3M Innovative Properties Company Verifying structural integrity of materials
EP3555607A2 (en) 2016-12-16 2019-10-23 3M Innovative Properties Company Verifying structural integrity of materials
CN109405734B (zh) * 2018-12-14 2023-11-21 中核新科（天津）精密机械制造有限公司 快速高精度平面平行度测量装置及测量方法
JP7453853B2 (ja) * 2020-05-27 2024-03-21 株式会社日立製作所 処理条件決定システムおよび処理条件探索方法
CZ2020320A3 (cs) * 2020-06-05 2021-12-08 Tescan Brno, S.R.O. Způsob automatické detekce požadovaného píku při opracování vzorku fokusovaným iontovým svazkem
CN113643296B (zh) * 2021-10-18 2022-02-08 季华实验室 电感元件装配质量检测方法、装置、电子设备及存储介质

Family Cites Families (63)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4166974A (en) 1978-01-23 1979-09-04 The United States Of America As Represented By The Secretary Of The Navy Apparatus and method for measuring capacitive energy
GB2015165B (en) 1978-02-09 1983-01-12 Koa Oil Co Ltd Detecting capacitively corrosion of pipes
US4481616A (en) 1981-09-30 1984-11-06 Rca Corporation Scanning capacitance microscope
US4973910A (en) 1988-01-14 1990-11-27 Wilson Mahlon S Surface potential analyzer
US5087533A (en) 1989-10-12 1992-02-11 Brown Paul M Contact potential difference cell
DD297509A5 (de) 1990-03-13 1992-01-09 Kloeden,Rolf,De Kapazitiver sensor zur beruehrungslosen rauheitsmessung
DE4018993A1 (de) 1990-06-13 1991-12-19 Max Planck Inst Eisenforschung Verfahren und einrichtung zur untersuchung beschichteter metalloberflaechen
GB9021447D0 (en) 1990-10-03 1990-11-14 Renishaw Plc Capacitance probes
GB9021448D0 (en) 1990-10-03 1990-11-14 Renishaw Plc Capacitance sensing probe
US5136247A (en) 1991-01-18 1992-08-04 Hansen Wilford N Apparatus and methods for calibrated work function measurements
JP2774878B2 (ja) 1991-04-25 1998-07-09 株式会社日立製作所 多層膜絶縁物試料の二次イオン質量分析方法
US5214389A (en) 1992-01-06 1993-05-25 Motorola, Inc. Multi-dimensional high-resolution probe for semiconductor measurements including piezoelectric transducer arrangement for controlling probe position
US5217907A (en) 1992-01-28 1993-06-08 National Semiconductor Corporation Array spreading resistance probe (ASRP) method for profile extraction from semiconductor chips of cellular construction
US5272443A (en) 1992-04-22 1993-12-21 Aluminum Company Of America Chatter and profile measuring using capacitor sensors
US5315259A (en) 1992-05-26 1994-05-24 Universities Research Association, Inc. Omnidirectional capacitive probe for gauge of having a sensing tip formed as a substantially complete sphere
US5218362A (en) 1992-07-02 1993-06-08 National Semiconductor Corporation Multistep analog-to-digital converter with embedded correction data memory for trimming resistor ladders
US5293131A (en) 1992-09-04 1994-03-08 Measurement Systems, Inc. Capacitive probe for bore measurement
US5381101A (en) 1992-12-02 1995-01-10 The Board Of Trustees Of The Leland Stanford Junior University System and method of measuring high-speed electrical waveforms using force microscopy and offset sampling frequencies
US5460684A (en) 1992-12-04 1995-10-24 Tokyo Electron Limited Stage having electrostatic chuck and plasma processing apparatus using same
US5546477A (en) * 1993-03-30 1996-08-13 Klics, Inc. Data compression and decompression
US5517123A (en) 1994-08-26 1996-05-14 Analog Devices, Inc. High sensitivity integrated micromechanical electrostatic potential sensor
US6201401B1 (en) 1994-08-29 2001-03-13 Imec Method for measuring the electrical potential in a semiconductor element
US6091248A (en) 1994-08-29 2000-07-18 Imec Vzw Method for measuring the electrical potential in a semiconductor element
US5723981A (en) 1994-08-29 1998-03-03 Imec Vzw Method for measuring the electrical potential in a semiconductor element
US5723980A (en) 1995-06-07 1998-03-03 Aerogage Corporation Clearance measurement system
US5773989A (en) 1995-07-14 1998-06-30 University Of South Florida Measurement of the mobile ion concentration in the oxide layer of a semiconductor wafer
US5974869A (en) 1996-11-14 1999-11-02 Georgia Tech Research Corp. Non-vibrating capacitance probe for wear monitoring
US6097196A (en) 1997-04-23 2000-08-01 Verkuil; Roger L. Non-contact tunnelling field measurement for a semiconductor oxide layer
US6011404A (en) * 1997-07-03 2000-01-04 Lucent Technologies Inc. System and method for determining near--surface lifetimes and the tunneling field of a dielectric in a semiconductor
US6139759A (en) 1997-07-08 2000-10-31 International Business Machines Corporation Method of manufacturing silicided silicon microtips for scanning probe microscopy
US6551972B1 (en) 1997-07-10 2003-04-22 Merck Patent Gesellschaft Solutions for cleaning silicon semiconductors or silicon oxides
US6037797A (en) 1997-07-11 2000-03-14 Semiconductor Diagnostics, Inc. Measurement of the interface trap charge in an oxide semiconductor layer interface
US5977788A (en) 1997-07-11 1999-11-02 Lagowski; Jacek Elevated temperature measurement of the minority carrier lifetime in the depletion layer of a semiconductor wafer
US6127289A (en) 1997-09-05 2000-10-03 Lucent Technologies, Inc. Method for treating semiconductor wafers with corona charge and devices using corona charging
US6213853B1 (en) 1997-09-10 2001-04-10 Speedfam-Ipec Corporation Integral machine for polishing, cleaning, rinsing and drying workpieces
US6094971A (en) 1997-09-24 2000-08-01 Texas Instruments Incorporated Scanning-probe microscope including non-optical means for detecting normal tip-sample interactions
US6255128B1 (en) 1998-08-06 2001-07-03 Lucent Technologies Inc. Non-contact method for determining the presence of a contaminant in a semiconductor device
US6517669B2 (en) 1999-02-26 2003-02-11 Micron Technology, Inc. Apparatus and method of detecting endpoint of a dielectric etch
US6546814B1 (en) 1999-03-13 2003-04-15 Textron Systems Corporation Method and apparatus for estimating torque in rotating machinery
US6791310B2 (en) 1999-03-15 2004-09-14 Therma-Wave, Inc. Systems and methods for improved metrology using combined optical and electrical measurements
AT407785B (de) 1999-03-23 2001-06-25 Vaillant Gmbh Verfahren zur erkennung und beurteilung von zündproblemen
US6114865A (en) 1999-04-21 2000-09-05 Semiconductor Diagnostics, Inc. Device for electrically contacting a floating semiconductor wafer having an insulating film
US6265890B1 (en) 1999-08-26 2001-07-24 Lucent Technologies Inc. In-line non-contact depletion capacitance measurement method and apparatus
US6858089B2 (en) 1999-10-29 2005-02-22 Paul P. Castrucci Apparatus and method for semiconductor wafer cleaning
US6538462B1 (en) 1999-11-30 2003-03-25 Semiconductor Diagnostics, Inc. Method for measuring stress induced leakage current and gate dielectric integrity using corona discharge
JP2001168160A (ja) 1999-12-07 2001-06-22 Sony Corp 半導体ウェハの検査システム
US6232134B1 (en) 2000-01-24 2001-05-15 Motorola Inc. Method and apparatus for monitoring wafer characteristics and/or semiconductor processing consistency using wafer charge distribution measurements
US6664546B1 (en) 2000-02-10 2003-12-16 Kla-Tencor In-situ probe for optimizing electron beam inspection and metrology based on surface potential
US6717413B1 (en) 2000-04-21 2004-04-06 Georgia Tech Research Corporation Contact potential difference ionization detector
CA2309412A1 (en) 2000-05-24 2001-11-24 Michael Thompson Scanning of biochemical microassays by kelvin microprobe
US7084661B2 (en) 2000-05-24 2006-08-01 Sensorchem International Corporation Scanning kelvin microprobe system and process for analyzing a surface
US6664800B2 (en) 2001-01-08 2003-12-16 Agere Systems Inc. Non-contact method for determining quality of semiconductor dielectrics
US6680621B2 (en) 2001-01-26 2004-01-20 Semiconductor Diagnostics, Inc. Steady state method for measuring the thickness and the capacitance of ultra thin dielectric in the presence of substantial leakage current
US6597193B2 (en) 2001-01-26 2003-07-22 Semiconductor Diagnostics, Inc. Steady state method for measuring the thickness and the capacitance of ultra thin dielectric in the presence of substantial leakage current
US7019654B2 (en) 2001-03-29 2006-03-28 Georgia Tech Research Corporation Contact potential difference sensor to monitor oil properties
KR100415538B1 (ko) 2001-09-14 2004-01-24 주식회사 하이닉스반도체 이중 유전막을 구비한 캐패시터 및 그 제조 방법
US6711952B2 (en) 2001-10-05 2004-03-30 General Electric Company Method and system for monitoring bearings
KR100546303B1 (ko) 2002-01-10 2006-01-26 삼성전자주식회사 코로나 전하를 이용한 집적 회로 소자의 콘택홀 모니터링방법
US7236847B2 (en) 2002-01-16 2007-06-26 Kla-Tencor Technologies Corp. Systems and methods for closed loop defect reduction
US6929531B2 (en) 2002-09-19 2005-08-16 Lam Research Corporation System and method for metal residue detection and mapping within a multi-step sequence
US6771091B2 (en) 2002-09-24 2004-08-03 Semiconductor Diagnostics, Inc. Method and system for elevated temperature measurement with probes designed for room temperature measurement
JP2004177377A (ja) 2002-11-29 2004-06-24 Hitachi Ltd 検査方法および検査装置
US6957154B2 (en) * 2003-02-03 2005-10-18 Qcept Technologies, Inc. Semiconductor wafer inspection system

Also Published As

Publication number Publication date
ATE434178T1 (de) 2009-07-15
EP1711801B1 (en) 2009-06-17
DE602004021637D1 (de) 2009-07-30
WO2005083407A1 (en) 2005-09-09
EP1711801A1 (en) 2006-10-18
US7308367B2 (en) 2007-12-11
US20040241890A1 (en) 2004-12-02
JP2007520721A (ja) 2007-07-26
TW200526949A (en) 2005-08-16

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