TWI348162B - Memory cell structure and method of manufacturing the same, and mram cell structure - Google Patents

Memory cell structure and method of manufacturing the same, and mram cell structure

Info

Publication number
TWI348162B
TWI348162B TW096127979A TW96127979A TWI348162B TW I348162 B TWI348162 B TW I348162B TW 096127979 A TW096127979 A TW 096127979A TW 96127979 A TW96127979 A TW 96127979A TW I348162 B TWI348162 B TW I348162B
Authority
TW
Taiwan
Prior art keywords
cell structure
manufacturing
same
memory cell
mram
Prior art date
Application number
TW096127979A
Other languages
English (en)
Other versions
TW200826097A (en
Inventor
Jhon Jhy Liaw
Yu Jen Wang
Chiashiung Tsai
Original Assignee
Taiwan Semiconductor Mfg Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Taiwan Semiconductor Mfg Co Ltd filed Critical Taiwan Semiconductor Mfg Co Ltd
Publication of TW200826097A publication Critical patent/TW200826097A/zh
Application granted granted Critical
Publication of TWI348162B publication Critical patent/TWI348162B/zh

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1653—Address circuits or decoders
    • G11C11/1655—Bit-line or column circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1653—Address circuits or decoders
    • G11C11/1657—Word-line or row circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1659—Cell access
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
    • H10B61/20—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors
    • H10B61/22—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors of the field-effect transistor [FET] type
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/10—Magnetoresistive devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Mram Or Spin Memory Techniques (AREA)
  • Hall/Mr Elements (AREA)
  • Semiconductor Memories (AREA)
TW096127979A 2006-12-06 2007-07-31 Memory cell structure and method of manufacturing the same, and mram cell structure TWI348162B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US86873306P 2006-12-06 2006-12-06
US11/674,581 US7692230B2 (en) 2006-12-06 2007-02-13 MRAM cell structure

Publications (2)

Publication Number Publication Date
TW200826097A TW200826097A (en) 2008-06-16
TWI348162B true TWI348162B (en) 2011-09-01

Family

ID=39496973

Family Applications (1)

Application Number Title Priority Date Filing Date
TW096127979A TWI348162B (en) 2006-12-06 2007-07-31 Memory cell structure and method of manufacturing the same, and mram cell structure

Country Status (3)

Country Link
US (3) US7692230B2 (zh)
CN (1) CN101197345B (zh)
TW (1) TWI348162B (zh)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5502339B2 (ja) * 2009-02-17 2014-05-28 ルネサスエレクトロニクス株式会社 半導体装置及び半導体装置の製造方法
US8278122B2 (en) * 2010-01-29 2012-10-02 Taiwan Semiconductor Manufacturing Company, Ltd. Method for forming MTJ cells
US8675397B2 (en) 2010-06-25 2014-03-18 Taiwan Semiconductor Manufacturing Company, Ltd. Cell structure for dual-port SRAM
US8399931B2 (en) 2010-06-30 2013-03-19 Taiwan Semiconductor Manufacturing Company, Ltd. Layout for multiple-fin SRAM cell
US8879314B2 (en) * 2011-06-06 2014-11-04 Iii Holdings 1, Llc Memory cell with Schottky diode
US8772845B2 (en) 2011-09-22 2014-07-08 Taiwan Semiconductor Manufacturing Company, Ltd. Technique for smoothing an interface between layers of a semiconductor device
US9230611B2 (en) 2011-11-04 2016-01-05 Hewlett Packard Enterprise Development Lp Structure of a switching device in an array
US8574928B2 (en) 2012-04-10 2013-11-05 Avalanche Technology Inc. MRAM fabrication method with sidewall cleaning
US10096544B2 (en) * 2012-05-04 2018-10-09 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor interconnect structure
KR102266709B1 (ko) 2014-09-22 2021-06-22 삼성전자주식회사 반도체 메모리 장치
KR102374642B1 (ko) 2015-01-22 2022-03-17 삼성전자주식회사 자기 메모리 소자 및 그 제조 방법
KR102358565B1 (ko) 2015-09-09 2022-02-04 삼성전자주식회사 자기 저항 소자를 포함하는 반도체 소자
US9842986B2 (en) * 2015-12-15 2017-12-12 Taiwan Semiconductor Manufacturing Company Ltd. Semiconductor structure and method of forming the same
KR20180086375A (ko) 2017-01-20 2018-07-31 삼성전자주식회사 반도체 메모리 장치
US10784440B2 (en) * 2017-11-10 2020-09-22 Taiwan Semiconductor Manufacturing Co., Ltd. Magnetic random access memory with various size magnetic tunneling junction film stacks
JP2020035976A (ja) * 2018-08-31 2020-03-05 キオクシア株式会社 磁気記憶装置
CN111435702B (zh) * 2019-01-14 2023-05-19 联华电子股份有限公司 磁阻随机存取存储单元
US11114606B2 (en) 2019-09-23 2021-09-07 International Business Machines Corporation MRAM devices containing a harden gap fill dielectric material

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4037561B2 (ja) * 1999-06-28 2008-01-23 株式会社東芝 半導体装置の製造方法
US6873023B2 (en) * 2002-04-18 2005-03-29 Kabushiki Kaisha Toshiba Magnetic random access memory
AU2003265062A1 (en) * 2002-10-03 2004-04-23 Koninklijke Philips Electronics N.V. Programmable magnetic memory device
JP3863484B2 (ja) * 2002-11-22 2006-12-27 株式会社東芝 磁気抵抗効果素子および磁気メモリ
JP2005116658A (ja) * 2003-10-06 2005-04-28 Fujitsu Ltd 磁気抵抗メモリ装置
JP2005310840A (ja) * 2004-04-16 2005-11-04 Toshiba Corp 磁気ランダムアクセスメモリ
US6977181B1 (en) * 2004-06-17 2005-12-20 Infincon Technologies Ag MTJ stack with crystallization inhibiting layer
US7387961B2 (en) 2005-01-31 2008-06-17 Taiwan Semiconductor Manufacturing Co., Ltd Dual damascene with via liner

Also Published As

Publication number Publication date
US20120170358A1 (en) 2012-07-05
US8080471B2 (en) 2011-12-20
TW200826097A (en) 2008-06-16
CN101197345A (zh) 2008-06-11
CN101197345B (zh) 2010-11-10
US20080135957A1 (en) 2008-06-12
US8558297B2 (en) 2013-10-15
US7692230B2 (en) 2010-04-06
US20110143514A1 (en) 2011-06-16

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