TWI347633B - - Google Patents

Info

Publication number
TWI347633B
TWI347633B TW096111103A TW96111103A TWI347633B TW I347633 B TWI347633 B TW I347633B TW 096111103 A TW096111103 A TW 096111103A TW 96111103 A TW96111103 A TW 96111103A TW I347633 B TWI347633 B TW I347633B
Authority
TW
Taiwan
Application number
TW096111103A
Other languages
Chinese (zh)
Other versions
TW200807521A (en
Inventor
Yoshichika Tokuno
Hiroshi Nagayasu
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Publication of TW200807521A publication Critical patent/TW200807521A/en
Application granted granted Critical
Publication of TWI347633B publication Critical patent/TWI347633B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H01L21/02052—Wet cleaning only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/67034—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for drying
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S134/00—Cleaning and liquid contact with solids
    • Y10S134/902—Semiconductor wafer

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Drying Of Solid Materials (AREA)
TW096111103A 2006-03-29 2007-03-29 Substrate treatment method, recording medium and substrate treatment device TW200807521A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2006090297A JP4176779B2 (en) 2006-03-29 2006-03-29 Substrate processing method, recording medium, and substrate processing apparatus

Publications (2)

Publication Number Publication Date
TW200807521A TW200807521A (en) 2008-02-01
TWI347633B true TWI347633B (en) 2011-08-21

Family

ID=38541283

Family Applications (1)

Application Number Title Priority Date Filing Date
TW096111103A TW200807521A (en) 2006-03-29 2007-03-29 Substrate treatment method, recording medium and substrate treatment device

Country Status (6)

Country Link
US (1) US8133327B2 (en)
JP (1) JP4176779B2 (en)
KR (1) KR100886860B1 (en)
DE (1) DE112007000442B4 (en)
TW (1) TW200807521A (en)
WO (1) WO2007111369A1 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI746737B (en) * 2016-12-22 2021-11-21 日商東京威力科創股份有限公司 Substrate treatment device and substrate treatment method

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JP5143498B2 (en) * 2006-10-06 2013-02-13 東京エレクトロン株式会社 Substrate processing method, substrate processing apparatus, program, and recording medium
JP5117365B2 (en) * 2008-02-15 2013-01-16 東京エレクトロン株式会社 Substrate processing apparatus, substrate processing method, and storage medium
JP5297056B2 (en) * 2008-03-11 2013-09-25 大日本スクリーン製造株式会社 Substrate processing apparatus and substrate processing method
JP5173502B2 (en) * 2008-03-14 2013-04-03 大日本スクリーン製造株式会社 Substrate processing apparatus and substrate processing method
JP5084656B2 (en) * 2008-07-29 2012-11-28 東京エレクトロン株式会社 Development processing method and development processing apparatus
JP5390873B2 (en) * 2009-01-28 2014-01-15 大日本スクリーン製造株式会社 Substrate processing method and substrate processing apparatus
US20120103371A1 (en) * 2010-10-28 2012-05-03 Lam Research Ag Method and apparatus for drying a semiconductor wafer
JP5642574B2 (en) * 2011-01-25 2014-12-17 東京エレクトロン株式会社 Liquid processing apparatus and liquid processing method
JP5474855B2 (en) * 2011-03-15 2014-04-16 東京エレクトロン株式会社 Liquid processing apparatus, liquid processing method, and recording medium storing program for executing liquid processing method
JP5472169B2 (en) 2011-03-16 2014-04-16 東京エレクトロン株式会社 Liquid processing apparatus, liquid processing method, and storage medium
JP5885989B2 (en) 2011-10-13 2016-03-16 東京エレクトロン株式会社 Liquid processing apparatus, liquid processing method, and storage medium
JP5666414B2 (en) * 2011-10-27 2015-02-12 東京エレクトロン株式会社 Liquid processing apparatus, liquid processing method, and storage medium
US9748120B2 (en) 2013-07-01 2017-08-29 Lam Research Ag Apparatus for liquid treatment of disc-shaped articles and heating system for use in such apparatus
JP5486708B2 (en) * 2013-02-28 2014-05-07 大日本スクリーン製造株式会社 Substrate processing apparatus and substrate processing method
JP6005588B2 (en) 2013-05-31 2016-10-12 東京エレクトロン株式会社 Liquid processing equipment
KR20150000548A (en) * 2013-06-24 2015-01-05 삼성전자주식회사 Substrate treating apparatus
JP6221922B2 (en) * 2014-04-25 2017-11-01 トヨタ自動車株式会社 Manufacturing method of semiconductor device
JP6454245B2 (en) * 2014-10-21 2019-01-16 東京エレクトロン株式会社 Substrate liquid processing method, substrate liquid processing apparatus, and computer readable storage medium storing substrate liquid processing program
JP6411172B2 (en) * 2014-10-24 2018-10-24 東京エレクトロン株式会社 Substrate processing method, substrate processing apparatus, and storage medium
JP6559602B2 (en) * 2015-09-18 2019-08-14 東京エレクトロン株式会社 Substrate processing apparatus and processing chamber cleaning method
KR102413271B1 (en) 2015-11-02 2022-06-28 삼성전자주식회사 Apparatus for transferring substrate
JP2017157800A (en) * 2016-03-04 2017-09-07 東京エレクトロン株式会社 Liquid-processing method, substrate processing device, and storage medium
KR20170110199A (en) * 2016-03-22 2017-10-11 세메스 주식회사 Apparatus and Method for treating substrate
KR102521416B1 (en) * 2017-05-24 2023-04-14 도쿄엘렉트론가부시키가이샤 Substrate processing apparatus and substrate processing method
JP7017343B2 (en) * 2017-08-31 2022-02-08 株式会社Ｓｃｒｅｅｎホールディングス Board processing method and board processing equipment
KR20200063242A (en) * 2017-10-23 2020-06-04 램 리서치 아게 Systems and methods for preventing static friction of high aspect ratio structures and/or restoring high aspect ratio structures
KR102022259B1 (en) * 2017-10-24 2019-09-18 주식회사 앤아이윈 Control unit for temperature and humidity controlled multi-layer and multi-wafer process chambers for wet cleaning equipment
KR102160436B1 (en) * 2019-01-08 2020-09-28 주식회사 앤아이윈 Wafer processing chamber for wet clean equipment with temperature and humidity adjustable heater
KR102267912B1 (en) 2019-05-14 2021-06-23 세메스 주식회사 Method for treating a substrate and an apparatus for treating a substrate
TW202105495A (en) * 2019-05-23 2021-02-01 日商東京威力科創股份有限公司 Substrate processing method

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI746737B (en) * 2016-12-22 2021-11-21 日商東京威力科創股份有限公司 Substrate treatment device and substrate treatment method

Also Published As

Publication number Publication date
US20090014033A1 (en) 2009-01-15
DE112007000442B4 (en) 2012-02-23
DE112007000442T5 (en) 2009-02-12
KR20070116598A (en) 2007-12-10
WO2007111369A1 (en) 2007-10-04
TW200807521A (en) 2008-02-01
JP4176779B2 (en) 2008-11-05
US8133327B2 (en) 2012-03-13
KR100886860B1 (en) 2009-03-05
JP2007263485A (en) 2007-10-11

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