JP6559602B2 - Substrate processing apparatus and processing chamber cleaning method - Google Patents

Description

  The present invention relates to a technique for cleaning the inside of a processing chamber in a substrate processing apparatus that supplies a processing liquid to a substrate and performs liquid processing on the substrate.

  In the manufacturing process of a semiconductor device, a liquid process such as a wet etching process or a chemical cleaning process is performed on a substrate such as a semiconductor wafer. Such a liquid treatment is performed by supplying a treatment liquid to the surface of the rotating substrate. Most of the processing liquid supplied to the substrate is collected by a cylindrical liquid receiving member called a cup. However, the splashed processing liquid scatters over the liquid receiving member and adheres to the inner wall surface of the processing chamber or the equipment in the processing chamber. If the adhering treatment liquid is allowed to stand, it can dry and crystallize, which can cause generation of particles. For this reason, the inner wall of the processing chamber and the equipment in the processing chamber are periodically cleaned with a cleaning liquid, for example, a shower of pure water (see, for example, Patent Document 1).

  If pure water adheres to the inner wall of the processing chamber, the pure water evaporates (vaporizes), thereby increasing the humidity in the processing chamber. In an atmosphere where the humidity is not sufficiently low, the substrate cannot be dried well after the liquid treatment. Therefore, the treatment cannot be resumed unless the pure water is sufficiently dried. Since it takes time to dry pure water, there is a problem that the downtime of the substrate processing apparatus becomes long.

Japanese Patent Application Laid-Open No. 11-297652

  An object of the present invention is to provide a technique capable of shortening a drying time after cleaning a processing chamber.

  According to one embodiment of the present invention, a processing chamber, a substrate holding part for holding a substrate provided in the processing chamber, a processing liquid nozzle for supplying a processing liquid to the substrate held by the substrate holding part, Water for cleaning the surface of the cleaning target portion including the walls of the processing chamber and the equipment provided in the processing chamber, and the water that can replace the water adhering to the surface of the cleaning target portion. There is provided a substrate processing apparatus including a cleaning fluid ejecting unit that ejects a highly volatile solvent into the internal space of the chamber.

  According to another embodiment of the present invention, in a processing chamber cleaning method for cleaning a cleaning target portion in a processing chamber of a substrate processing apparatus, water is sprayed into the processing chamber to wet the cleaning target portion with water, A cleaning process for cleaning the object to be removed attached to the surface of the object to be cleaned, and a solvent having higher volatility than water is injected into the processing chamber toward the water adhering to the surface of the object to be cleaned. There is provided a processing chamber cleaning method comprising a solvent supplying step for supplying the solvent and a drying step for drying the surface of the cleaning target portion.

  According to the embodiment of the present invention, the surface of the cleaning target portion in the chamber is cleaned with water, and then the solvent is supplied to the water attached to the surface of the cleaning target portion so that the surface of the cleaning target portion is Since it comes to be covered with the solvent, the surface of the part to be cleaned can be quickly dried.

It is a top view showing a schematic structure of a substrate processing system concerning one embodiment. It is a longitudinal cross-sectional view which shows schematic structure of the process chamber which concerns on 1st Embodiment. It is a longitudinal cross-sectional view which shows schematic structure of the process chamber which concerns on 1st Embodiment. It is a perspective view which shows the jig | tool for washing | cleaning. It is a schematic plan view similar to FIG. 1 showing the arrangement of the jig storage portion. It is a piping diagram which shows the modification of a washing water supply part and a solvent supply part. It is a piping diagram which shows the modification of a low humidity gas supply part. It is a schematic perspective view which shows the heater provided in the wall body of the process chamber. It is a longitudinal cross-sectional view which shows schematic structure of the processing chamber which concerns on 2nd Embodiment. It is a longitudinal cross-sectional view which shows schematic structure of the liquid receiving cup upper part and floor board vicinity shown in FIG. It is a perspective view which shows one specific form of the nozzle arm shown in FIG. It is a figure explaining the pinning effect of wetting.

  FIG. 1 is a diagram showing a schematic configuration of a substrate processing system according to the present embodiment. In the following, in order to clarify the positional relationship, the X axis, the Y axis, and the Z axis that are orthogonal to each other are defined, and the positive direction of the Z axis is the vertically upward direction.

  As shown in FIG. 1, the substrate processing system 1 includes a carry-in / out station 2 and a processing station 3. The carry-in / out station 2 and the processing station 3 are provided adjacent to each other.

  The carry-in / out station 2 includes a carrier placement unit 11 and a transport unit 12. A plurality of carriers C that accommodate a plurality of substrates, in this embodiment a semiconductor wafer (hereinafter referred to as a wafer W) in a horizontal state, are placed on the carrier placement unit 11.

  The transport unit 12 is provided adjacent to the carrier placement unit 11 and includes a substrate transport device 13 and a delivery unit 14 inside. The substrate transfer device 13 includes a wafer holding mechanism that holds the wafer W. Further, the substrate transfer device 13 can move in the horizontal direction and the vertical direction and can turn around the vertical axis, and transfers the wafer W between the carrier C and the delivery unit 14 using the wafer holding mechanism. Do.

  The processing station 3 is provided adjacent to the transfer unit 12. The processing station 3 includes a transport unit 15 and a plurality of processing units 16. The plurality of processing units 16 are provided side by side on the transport unit 15.

  The transport unit 15 includes a substrate transport device 17 inside. The substrate transfer device 17 includes a wafer holding mechanism that holds the wafer W. Further, the substrate transfer device 17 can move in the horizontal direction and the vertical direction and can turn around the vertical axis, and transfers the wafer W between the delivery unit 14 and the processing unit 16 using a wafer holding mechanism. I do.

  The processing unit 16 performs predetermined substrate processing on the wafer W transferred by the substrate transfer device 17.

  Further, the substrate processing system 1 includes a control device 4. The control device 4 is a computer, for example, and includes a control unit 18 and a storage unit 19. The storage unit 19 stores a program for controlling various processes executed in the substrate processing system 1. The control unit 18 controls the operation of the substrate processing system 1 by reading and executing the program stored in the storage unit 19.

  Such a program may be recorded on a computer-readable storage medium, and may be installed in the storage unit 19 of the control device 4 from the storage medium. Examples of the computer-readable storage medium include a hard disk (HD), a flexible disk (FD), a compact disk (CD), a magnetic optical disk (MO), and a memory card.

  In the substrate processing system 1 configured as described above, first, the substrate transfer device 13 of the loading / unloading station 2 takes out the wafer W from the carrier C placed on the carrier placement unit 11 and receives the taken-out wafer W. Place on the transfer section 14. The wafer W placed on the delivery unit 14 is taken out from the delivery unit 14 by the substrate transfer device 17 of the processing station 3 and carried into the processing unit 16.

  The wafer W loaded into the processing unit 16 is processed by the processing unit 16, then unloaded from the processing unit 16 by the substrate transfer device 17, and placed on the delivery unit 14. Then, the processed wafer W placed on the delivery unit 14 is returned to the carrier C of the carrier platform 11 by the substrate transfer device 13.

  Next, the configuration of the processing unit 16 will be described with reference to FIG. The processing unit 16 includes a chamber 20, a substrate holding mechanism 30, a processing fluid supply unit 40, and a liquid receiving cup 50.

  The chamber 20 accommodates the substrate holding mechanism 30, the processing fluid supply unit 40, and the liquid receiving cup 50. An FFU (Fan Filter Unit) 21 is provided on the ceiling of the chamber 20.

  The FFU 21 includes a duct 22, a fan 23 and a damper 24 (flow rate control valve) provided in that order in the duct 22, and a filter 25 such as a ULPA filter. By rotating the fan 23, the air in the clean room flows into the duct 22, and the air from which particles are removed by the filter 25 (clean air) is blown downward into the chamber 20.

  A rectifying plate 26 is provided on the upper portion of the chamber (processing chamber) 20. The rectifying plate 26 is a plate in which a large number of holes are formed. A low-humidity gas supply unit 28 that supplies low-humidity gas, for example, dry air (DA), is provided in a space 27 above the rectifying plate 26 in the chamber 20. The low-humidity gas supply unit 28 includes a nozzle 28a provided in the space 27, a gas supply path 28c that connects the nozzle 28a and the low-humidity gas supply source 28b, and a flow control device interposed in the gas supply path 28c. 28d. The flow control device 28d includes an on-off valve, a flow rate adjustment valve, and the like. The low humidity gas may be nitrogen gas.

  The substrate holding mechanism 30 includes a substrate holding part 31, a shaft part 32, and a rotation driving part 33. The substrate holding unit 31 holds the wafer W horizontally. By rotating the substrate holding part 31 via the shaft part 32 by the rotation drive part 33, the wafer W held on the substrate holding part 31 can be rotated around the vertical axis.

  The processing fluid supply unit 40 includes a plurality of nozzles (processing fluid nozzles) 41 that supply a processing fluid (processing liquid or processing gas) to the wafer W. In the present embodiment, the plurality of nozzles include a chemical nozzle 41a, a rinse nozzle 41b, and a solvent nozzle 41c. The plurality of nozzles 41 may include another chemical nozzle, another rinse nozzle, a two-fluid nozzle, a dry gas nozzle, and the like.

  The processing fluid supply unit 40 has a plurality (two in the illustrated example) of nozzle arms 42. For simplification of the drawing, only one of the two nozzle arms 42 is shown in FIG. Some of the nozzles 41 are attached to the tip of each nozzle arm 42. The nozzle arm 42 can be swung around the vertical axis by the arm driving unit 43 (arrow SW in FIG. 2), and can be moved up and down in the vertical direction. By rotating the nozzle arm 42, the nozzle 41 provided on the nozzle arm 42 is positioned above the central portion of the wafer W and in a standby position outside the liquid receiving cup 50 in plan view (shown in FIG. 3). It can be located at any position between the home position).

  Each nozzle 41 is supplied with a processing fluid (processing liquid or processing gas) from a corresponding processing fluid supply unit (not shown). Although not shown, each processing fluid supply unit includes a processing fluid supply source including a tank, a cylinder, a factory power supply source, etc., a processing fluid line connecting a processing flow fluid supply source and a corresponding nozzle, and a processing fluid It consists of flow control devices such as on-off valves and flow rate regulating valves that are interposed in the line.

  The liquid receiving cup 50 surrounds the holding unit 31 and collects the liquid shaken off from the wafer W after being supplied from the nozzle 41 to the rotating wafer W. A drain port 51 is formed at the bottom of the liquid receiving cup 50, and the processing liquid collected by the liquid receiving cup 50 is discharged from the drain port 51 to the outside of the processing unit 16. Further, an exhaust port 52 for discharging the gas supplied from the FFU 21 to the outside of the chamber 20 (processing unit 16) is formed at the bottom of the liquid receiving cup 50.

  A floor plate (bottom wall) 53 extends from the outer peripheral cylindrical portion 50 a of the liquid receiving cup 50 toward the side wall 20 a of the chamber 20. The surface of the floor board 53 inclines so that it may become low as it approaches the side wall 20a. A drainage port 54 in the form of a slit is provided between the floor plate 53 and the side wall 20a. As shown in FIG. 3, the drainage port 54 extends along the three side walls 20a excluding the side wall 20a provided with the wafer loading / unloading port 20b with a shutter. A drain channel 55 is provided below the drain port 54, and a drain channel 56 is connected to the drain channel 55.

  The drainage path 56 joins with a drainage path 57 connected to the drainage port 51 of the liquid receiving cup 50. A switching valve device 58 is interposed in the drainage passage 57, and by switching the switching valve device 58, the drainage that has flowed through the drainage passages 56, 57 is converted into an acid system, an alkali system, and an organic system. To any one of the factory drainage systems (not shown).

  An exhaust port 59 in the form of a slit extending in parallel with the drainage port 54 described above is provided on the side wall 20 a of the chamber 20 above the drainage port 54. Since the exhaust port 59 is located higher than the drain port 54, almost no liquid flows into the exhaust port 59. The exhaust port 59 is connected to a duct 60 that surrounds the side wall 20 a of the chamber 20. The duct 60 is connected to an exhaust path 61 provided with an exhaust flow rate adjustment valve 61a composed of a damper or a butterfly valve.

  The exhaust path 61 merges with the exhaust path 62 connected to the exhaust port 52 of the liquid receiving cup 50. Also in the exhaust passage 62, an exhaust flow rate adjusting valve 62a made of a damper or a butterfly valve is interposed. A switching valve device 63 is interposed in the exhaust passage 62. By switching the switching valve device 63, the exhaust gas flowing through the exhaust passages 61 and 62 is converted into acid, alkaline and organic factory exhaust. It can be led to any one of the systems (not shown).

  A plurality of, for example, 2 to 4 cleaning fluid nozzles 81 are provided below the rectifying plate 26 in the chamber 20. The cleaning fluid nozzle 81 is preferably provided at a position as high as possible below the current plate 26. The height position of the cleaning fluid nozzle 81 is higher than the height position of the nozzle 41 and the nozzle arm 42 (even if the nozzle 41 and the nozzle arm 42 are in the raised position). As shown in FIG. 3, the cleaning fluid nozzle 81 is provided at two corners of the rectangular chamber 20 in plan view, and faces the diagonal direction. Cleaning fluid nozzles 81 may be provided at the remaining two corners. Each cleaning fluid nozzle 81 is supported by an upper end portion of a column 82 extending vertically upward from the floor plate 53. In FIG. 2, the lower end portion of the support 82 is not shown for simplification of the drawing.

  Each cleaning fluid nozzle 81 can be supplied with pure water as cleaning water from the cleaning water supply unit 83, and can be supplied with a solvent from the solvent supply unit 84. The washing water supply unit 83 has a pure water supply path 83b connected to a pure water supply source 83c and having an on-off valve 83a interposed therebetween. The solvent supply unit 84 has a solvent supply path 84b connected to the solvent supply source 84c and having an on-off valve 84a interposed therebetween. By switching the on-off valves 83a and 84a, pure water or solvent can be selectively injected from the cleaning fluid nozzle 81. The cleaning fluid nozzle 81, the cleaning water supply unit 83, and the solvent supply unit 84 constitute a cleaning fluid ejection unit.

  As the solvent, a solvent having higher volatility than pure water and having a property of substituting pure water attached to the member surface can be used. As the solvent, isopropyl alcohol (IPA) is preferably used. Since IPA has a significantly lower surface tension than water, it is possible to eliminate pure water adhering to the member surface due to the Marangoni effect. IPA is an organic solvent that is most often used for drying processing of a substrate such as a semiconductor wafer, and the IPA that is discharged from the cleaning fluid nozzle 81 does not require as cleanliness as when it is discharged onto the wafer W. What is supplied to W can also be collected and reused. Acetone can also be used as the solvent.

  The cleaning fluid nozzle 81 is configured to be able to spray the supplied liquid in a mist shape at a relatively large spray angle (wide angle) at least in the horizontal direction (in the cleaning fluid nozzle 81 of FIG. 3). See arrow attached). Since the mist of the liquid gradually falls due to gravity while drifting in the chamber, the vertical spray angle of the cleaning fluid nozzle 81 may not be as wide as the horizontal spray angle. For example, as indicated by an arrow attached to the cleaning fluid nozzle 81 in FIG. 2, the cleaning fluid nozzle 81 is only required to eject liquid in a substantially horizontal direction (a part of the liquid is ejected obliquely upward and obliquely downward). )

  The cleaning fluid nozzles 81 are preferably provided so that the space below the rectifying plate 26 in the chamber 20 is evenly filled with liquid mist, and the number and arrangement positions of the cleaning fluid nozzles 81 are not limited to those illustrated. . The cleaning fluid nozzle 81 may form mist by either a one-fluid method or a two-fluid method.

  In FIG. 3, a cleaning jig 90 for promoting drying of a member to be cleaned, for example, a member located near the upper portion of the holding unit 31 of the substrate holding mechanism 30 is shown in a state held by the substrate holding mechanism 30. Has been. As shown in FIG. 4, the cleaning jig 90 includes a plate-like body 91 having the same diameter as the wafer W and a plurality of fins 92 provided on the upper surface of the plate-like body 91. Since the plate-like body 91 of the cleaning jig 90 has almost the same shape as that of the wafer W, the cleaning jig 90 can be transferred by the substrate transfer devices 13 and 17. When the cleaning jig 90 is held by the substrate holding mechanism 30 and rotated (see the arrow R in FIG. 4), the fins 92 have an air flow in the vicinity of the cleaning jig 90 (see the arrow AF in FIG. 4). )) May be generated.

  The cleaning jig 90 may be rotated by positioning the nozzle arm 42 above the cleaning jig 90 held by the substrate holding mechanism 30. At this time, in order to promote the drying of the lower surface of the nozzle arm 42, it is preferable that the fin 92 is formed so that the air current strikes the lower surface of the nozzle arm 42 vigorously. The airflow formed by the cleaning jig 90 is not limited to the ascending airflow but may be a swirling airflow or the like.

  In order to store the cleaning jig 90, a jig storage section 93, which is a storage place for the cleaning jig 90, can be provided in the transfer section 12 of the carry-in / out station 2 or the processing station 3. . For example, as schematically shown in FIG. 5, a jig storage portion 93 can be provided at a position accessible by the substrate transfer device 17 at the end of the processing station 3. Or the place (for example, the place where the code | symbol 93 is written together) where one of the processing units 16 is provided can be made into a jig | tool accommodation part.

  Next, the operation of the processing unit 16 will be described.

  The wafer W is carried into the processing unit 16 by the substrate transfer device 17 and held by the substrate holding mechanism 30. The wafer W is rotated around the vertical axis by the substrate holding mechanism 30, and any one of the nozzle arms 42 positions the nozzle 41 necessary for processing above the wafer W, so that a processing fluid (processing liquid) is applied to the wafer W. , Process gas).

  For example, first, a chemical treatment process for supplying a chemical (for example, DHF, BHF, SC-1, SPM, etc.) to the wafer W by the chemical nozzle 41a is performed. Next, a rinsing process for supplying pure water (DIW) as a rinsing liquid to the wafer W is performed by the rinsing nozzle 41b. Next, a solvent replacement step of supplying a drying solvent (IPA in this case) to the wafer W by the solvent nozzle 41c is executed. Thereafter, a drying process is performed in which the wafer W is rotated at a high speed to dry the wafer W. After the drying process, the processed wafer W is carried out of the processing unit 16 by the substrate transfer device 17.

  Clean air is supplied from the FFU 21 into the chamber 20 at a predetermined flow rate FL1 when the wafer is carried in and out and while the chemical treatment process, the rinsing process, and the solvent replacement process are performed. Further, the atmosphere in the liquid receiving cup 50 is sucked through the exhaust port 52 of the liquid receiving cup 50 at a predetermined flow rate FL2. Further, the atmosphere in the chamber 20 is sucked through the exhaust port 59 of the side wall 20a of the chamber 20 at a predetermined flow rate FL3.

  While the drying process is being performed, the supply of clean air from the FFU 21 into the chamber 20 is stopped, and the above-described flow rate FL1 in which dry air is predetermined in the space 27 above the rectifying plate 26 from the low-humidity gas supply unit 28. Supplied in. The flow rate of exhaust gas through the exhaust port 52 and the flow rate of exhaust gas through the exhaust port 59 are maintained at FL2 and FL3 described above.

  While the drying process is being performed, the IPA that is supplied to the wafer W and then shaken off from the wafer W and collected in the liquid receiving cup 50 may be reused in a solvent replacement process for cleaning the chamber 20 described later. . For this purpose, it is possible to provide a recovery tank 65 that recovers IPA discharged from the drainage passage 57 connected to the drainage port 51 of the liquid receiving cup 50. By switching the on-off valves 67a and 67b, the state of sending the IPA recovered in the recovery tank 65 to the solvent supply source 84c of the solvent supply unit 84 via the IPA supply path 66 and the state of discarding without sending it are switched. Can do. While the drying process is being performed, the switching valve device 58 connects the drainage path 57 to the recovery tank 65.

  While the chemical solution processing step is being performed, most of the chemical solution supplied to the wafer W is collected in the liquid receiving cup 50, but the chemical solution misted due to collision with the wafer W or the like exceeds the liquid receiving cup 50. Scatter. The scattered mist of the chemical solution adheres to the surfaces of the side walls 20a and the floor plate 53 of the chamber 20 and the surfaces of devices in the chamber 20 such as the nozzle arm 42 (particularly the lower surface of the nozzle arm 42). The attached chemical solution may make the atmosphere in the chamber 20 an unfavorable atmosphere (for example, an acid or alkali atmosphere). Moreover, when the chemicals adhering to the above various surfaces solidify and fall off, particles are generated. For this reason, every time processing of one wafer W is completed, or periodically (for example, every time processing of a predetermined number of wafers, for example, 20 wafers W is completed, or the processing unit 16 is determined in advance. The chamber 20 is cleaned every time it is run) or when the contamination level in the chamber 20 reaches a predetermined level.

  A method for cleaning the inside of the chamber 20 will be described below. Although the inside of the liquid receiving cup 50 can be cleaned at the same time as the cleaning in the chamber 20 or at a different time, this will not be described here. The cleaning method in the chamber 20 described below is automatically performed by the control device 4 controlling various devices of the processing unit 16 based on the cleaning recipe stored in the storage unit 19.

[In-chamber cleaning process (cleaning process)]
First, a mist of DIW as a cleaning liquid is jetted into the chamber 20 from the cleaning fluid nozzle 81. The DIW injection is continuously performed for a predetermined time, and then stopped. Also at this time, clean air is supplied from the FFU 21 into the chamber 20 at the aforementioned flow rate FL1. Further, the exhaust flow rate through the exhaust port 52 of the liquid receiving cup 50 and the exhaust flow rate through the exhaust port 59 of the side wall 20a of the chamber 20 are also set to FL2 and FL3, respectively. When the internal space of the chamber 20 is filled with the mist of DIW, members (hereinafter referred to as a wall body (for example, the side wall 20a, the floor plate 53) facing the internal space of the chamber 20 and devices (for example, the nozzle arm 42) in the chamber 20) The mist of DIW adheres to the surface of the cleaning target portion). By filling the internal space of the chamber 20 with the DIW mist, the DIW mist can be attached to the downward surface such as the lower surface of the nozzle arm 42.

  By maintaining the surface of the portion to be cleaned in the chamber 20 wetted with DIW, the chemical solution adhering to the surface and the solid derived from the chemical solution are dissolved in DIW. DIW can dissolve most of the objects that can adhere to the surface of the part to be cleaned. DIW adhering to the floor board 53 flows along the inclination of the floor board 53 and flows into the drain port 54. DIW adhering to the side wall 20a falls downward due to gravity and flows into the drainage port 54 through the surface of the inclined floor plate 53 or directly. DIW adhering to the nozzle arm 52 falls into the liquid receiving cup 50 and then flows into the drain 51, or falls on the outer surface of the cup 50 or falls to the surface of the floor plate 53, and then the inclined floor plate. It flows into the drainage port 54 through the surface of 53. That is, most of the DIW ejected from the cleaning fluid nozzle 81 is discharged out of the processing unit 16 through the drainage port 51 of the cup 50 or the drainage port 54 of the floor plate 53.

  When performing the chamber cleaning process, for example, in the latter stage of the chamber cleaning process, the holder 31 of the substrate holding mechanism 30 may be rotated to shake off the DIW attached to the holder 31.

[In-chamber solvent supply process (solvent supply process)]
After the DIW injection from the cleaning fluid nozzle 81 is stopped, the DIW remains on the surfaces of the devices in the chamber 20 such as the side wall 20a, the floor plate 53, and the nozzle arm 52. In order to accelerate the drying of the DIW, an in-chamber solvent supply step is performed. Prior to performing the chamber solvent supply step, the wafer loading / unloading port 20 b is opened, and the cleaning jig 90 is loaded into the chamber 20 and held by the holding unit 31.

  Next, mist of IPA is jetted from the cleaning fluid nozzle 81, whereby IPA is supplied toward DIW attached to the surface of the cleaning target portion. The IPA mist injection is continuously performed for a predetermined time, and then stopped. Conditions for supplying clean air from the FFU 21 when performing the solvent supply process in the chamber, exhausting through the exhaust port 52 of the liquid receiving cup 50, and exhausting through the exhaust port 59 of the side wall 20a of the chamber 20 are as follows. It may be the same as in the washing step. However, the exhaust is discarded into an organic factory exhaust system.

  The recovery path of the IPA injected in the in-chamber solvent supply process is the same as the recovery path of the injected DIW in the in-chamber cleaning process. However, the recovered IPA is discarded into an organic factory waste liquid system, and the recovered DIW is discarded into an acid or alkaline factory waste liquid system.

  When the jetted IPA is supplied to the DIW attached to the surface of the object to be cleaned, the DIW adhering to the original is expelled by the IPA, and at least most of the DIW attached to the surface of the object to be cleaned is Replaced by IPA. After the injection of IPA from the cleaning fluid nozzle 81 is stopped, the IPA remains on the surface of the target portion to be cleaned.

[In-chamber drying process (drying process)]
IPA adhering to the surface of the portion to be cleaned can be dried by natural drying. Since the volatility of IPA is significantly higher than that of DIW, IPA adhering to the surface can be dried in a short time.

  After the injection of IPA from the cleaning fluid nozzle 81 is stopped or shortly before, the supply of clean air from the FFU 21 (the humidity of this clean air is the same as the humidity of the air in the clean room) is stopped, and instead In addition, dry air is supplied into the chamber 20 from the low-humidity gas supply unit 28 through the space 27 above the rectifying plate 26. Thereby, the humidity in the chamber 20 is lowered, and drying of the cleaning target portion can be promoted. Even when the in-chamber drying process is being performed, the conditions for exhausting through the exhaust port 52 of the liquid receiving cup 50 and exhausting through the exhaust port 59 of the side wall 20a of the chamber 20 are the same as those for supplying the solvent in the chamber. It can be kept the same as when the process is running.

  On the lower surface of the nozzle arm 42, DIW expelled by IPA may adhere as a lump or IPA may adhere as a lump. If such a lump of liquid remains, drying is delayed. In order to remove such a lump of liquid, the nozzle arm 42 is swung to be positioned above the cleaning jig 90 and the cleaning jig 90 is rotated. As a result, an air flow is generated in the space near and above the cleaning jig 90, and the liquid mass adhering to the lower surface of the nozzle arm 42 is blown off by the air flow, and drying of the nozzle arm 42 can be promoted. Even when the liquid mass is not attached to the lower surface of the nozzle arm 42 and is simply wetted with the liquid, drying is promoted by the airflow.

  When the surface of the object to be cleaned is dried, the cleaning jig 90 is taken out of the processing unit 16 by the substrate transfer device 17 and stored in the storage place 93 again. Immediately thereafter, the wafer W can be loaded into the processing unit 16 and processing of the wafer W can be started.

  According to the above-described embodiment, after the surface of the cleaning target portion in the chamber 20 is cleaned with DIW, DIW is replaced with a highly volatile solvent, so that the surface of the cleaning target portion can be quickly dried. For this reason, the downtime of the processing unit 16 can be greatly shortened, and the efficient operation of the substrate processing system 1 can be realized.

  Note that the above-described embodiment can be modified as follows.

  In the above embodiment, DIW and IPA are ejected from the same nozzle (81), but may be ejected from separate nozzles.

  Prior to the start of the chamber cleaning process, the cleaning jig 90 may be carried into the chamber 20 and held by the holding unit 31. In this case, when performing the chamber cleaning process, the nozzle arm 42 is turned and positioned above the cleaning jig 90, and the cleaning jig 90 is rotated. Then, since the DIW mist flows toward the lower surface of the nozzle arm 42 in the airflow formed by the cleaning jig 90, the lower surface of the nozzle arm 42 that is easily contaminated by the splash of the chemical solution can be more reliably cleaned. Become.

  When the cleaning jig 90 is carried into the chamber 20 after the in-chamber cleaning step and before the in-chamber solvent replacement step, for example, DIW attached to the rectifying plate 26 drips as droplets. The arm of the substrate transfer device 17 may get wet. However, this is not the case if the cleaning jig 90 is carried into the chamber 20 before the start of the chamber cleaning process.

  The cleaning jig 90 may be rotated even when the in-chamber solvent supply process is being performed. By doing so, mist can be more easily attached to a place where IPA mist is difficult to adhere, and the replacement efficiency can be improved.

  In the chamber solvent supply step, heated IPA may be sprayed from the cleaning fluid nozzle 81. Thereby, a drying process can be completed in a shorter time. For this purpose, a heater 84d can be provided in the solvent supply path 84b of the solvent supply section 84, as schematically shown in FIG. The heater 84d may be provided in a tank (not shown) serving as the solvent supply source 84c.

  In the in-chamber cleaning process, heated DIW may be sprayed from the cleaning fluid nozzle 81 to warm the cleaning target portion. Thereby, a drying process can be completed in a shorter time. For this purpose, as schematically shown in FIG. 6, a heater 83 d can be provided in the cleaning water supply path 83 b of the cleaning water supply unit 83. The heater 83d may be provided in a tank (not shown) serving as the cleaning water supply source 83c. Moreover, the removal target can be dissolved more efficiently by using heated DIW.

  In the in-chamber drying process, heated dry air may be supplied from the low-humidity gas supply unit 28. Thereby, drying can be completed in a shorter time. For this purpose, a heater 28e can be provided in the gas supply path 28c of the low-humidity gas supply unit 28, as schematically shown in FIG.

  In the chamber cleaning step or the chamber solvent supply step, the exhaust flow rate through the exhaust port 52 of the liquid receiving cup 50 and the exhaust flow rate through the exhaust port 59 of the side wall 20a of the chamber 20 are the sum of the above. It may be changed while maintaining FL2 + FL3. By doing so, the airflow in the chamber 20 can be changed while the internal pressure in the chamber 20 is maintained substantially constant. In this case, there is a possibility that the mist may be easily attached to a portion where the mist of the portion to be cleaned is difficult to adhere.

  Further, in the chamber cleaning process or the chamber solvent supply process, the rotation speed of the cleaning jig 90 may be changed (including zero rotation speed) in order to change the airflow in the chamber 20. In the chamber cleaning process or the chamber solvent supply process, the movable member in the chamber 20 may be moved. For example, it is possible to promote adhesion of mist to the entire nozzle arm 42 by turning the nozzle arm 42 or moving it up and down.

  The surface of the wall body (side wall 20a, floor plate 53, etc.) of the chamber 20 may be formed of a hydrophilic material, or a hydrophilic film may be provided on the surface of the wall body or a hydrophilic treatment may be performed. Since the contact angle of the liquid with respect to the hydrophilic surface becomes small, IPA having a low surface tension can be more easily spread on the surface, and the evaporation of IPA can be promoted. The surface of the object to be cleaned other than the wall body may be hydrophilic.

  As schematically shown in FIG. 8, a heater 95 may be attached to the wall body (side wall 20 a, floor plate 53, etc.) of the chamber 20. As the heater 95, for example, a heater similar to a printed heating wire for removing condensation on glass for automobiles can be used. The evaporation of IPA can be promoted by heating the wall.

  The substrate to be processed by the substrate processing apparatus is not limited to a semiconductor wafer, and may be another type of substrate, such as a glass substrate or a ceramic substrate.

  Next, a processing unit (referred to as “processing unit 16A” for distinction) according to another embodiment (hereinafter referred to as “second embodiment”) will be described with reference to FIGS. The embodiment described so far will be referred to as “first embodiment” below for convenience of explanation. In FIGS. 9 to 11 showing the second embodiment, the same members as those in the first embodiment are denoted by the same reference numerals, and redundant description is omitted.

  In the processing unit 16A according to the second embodiment, the liquid receiving cup 50 has an immovable (fixed) exhaust cup 501 on the outermost side and a draining cup 502 for guiding a processing liquid on the inner side. .

  The drainage cup 502 includes a drainage cup body 5021, and a first movable cup element 5022 and a second movable cup element 5023 that can be moved up and down by a lift drive mechanism (not shown). Further, the ring-shaped first rotating cup 34 and the second rotating cup 35 are attached to the holding portion 31 so as to rotate together with the holding portion 31. By switching the vertical position of the first movable cup element 5022 and the second movable cup element 5023, the first drainage liquid for the organic liquid between the outer peripheral portion 5021a of the drainage cup body 5021 and the first movable cup element 5022 The passage 502a, the second drainage passage 502b for acidic liquid between the first movable cup element 5022 and the second movable cup element 5023, and the inner peripheral portion 5021b of the second movable cup element 5023 and the drainage cup body 5021 Any one of the third drainage passages 502c for alkaline liquid can be opened. The processing liquid that splashes outward from the wafer W through the gap between the first rotating cup 34 and the second rotating cup 35 flows into the drainage passage (any one of 502a-c) whose inlet is opened. To do. The drainage paths are respectively connected to the bottoms of these drainage paths, and these drainage paths merge to form a drainage path 57 and then merge into the drainage path 56.

  The exhaust cup 501 includes an outer peripheral cylindrical portion 5011 and an overhanging portion 5012 that protrudes radially inward from the upper end portion of the outer peripheral cylindrical portion 5011. An exhaust passage 501a is formed between the exhaust cup 501 and the outer peripheral portion 5021a of the drain cup main body 5021. An exhaust port 52 is provided at the bottom of the exhaust passage 501 a, and an exhaust duct (exhaust passage) 62 is connected to the exhaust port 52. The first rotating cup body 34 prevents the processing liquid scattered from the rotating wafer W from directly jumping into the exhaust passage 501a.

  In order to prevent or at least greatly suppress the processing liquid scattered from the rotating wafer W, in particular a fine mist processing liquid, from reaching the side wall 20a of the chamber 20, the outside of the liquid receiving cup 50 (of the exhaust cup 501). A mist guard 100 is provided on the outer side. The mist guard 100 has an outer peripheral cylindrical portion 101 and an overhanging portion 102 that extends from the upper end portion of the outer peripheral cylindrical portion 101 toward the inner side (radial direction) of the outer peripheral cylindrical portion 101 and projects above the exhaust cup 51. doing. The mist guard 100 can be moved up and down by an elevating mechanism (not shown) to take a high position HG and a low position LG (see FIG. 10).

  A cylindrical guard pocket 103 (mist guard housing portion) for housing the outer circumferential cylinder portion 101 of the mist guard 100 is provided outside the outer circumferential cylinder portion 5011 of the exhaust cup 51. The floor board 53 extends outward from the guard pocket 103.

  The low-humidity gas supply unit in the second embodiment (referred to as “low-humidity gas supply unit 28A” for distinction) is composed of nitrogen gas as a low-humidity and low-oxygen concentration gas and dry air as a low-humidity gas. Any one of these can be selectively supplied. Another gas supply path 28e joins the gas supply path 28c on the downstream side of the flow control device 28d (open / close valve or the like). A flow control device 28f (open / close valve or the like) is interposed in the gas supply path 28e. A dry air supply source 28b is connected to the gas supply path 28c, and a nitrogen gas supply source 28g is connected to the gas supply path 28e. By switching the flow control devices 28d and 28f, either dry air or nitrogen gas can be supplied to the nozzle 28a.

  Members exposed to the atmosphere in the chamber 20, in particular, the inner surface of the side wall 20 a of the chamber 20, the upper surface of the floor plate 53, the upper surface of the overhanging portion 102 of the mist guard 100, the entire surface of the nozzle arm 42, the arm driving unit (post, A blasting process is performed on the entire surface of the drive mechanism housing portion. It is well known that by performing a blasting process on the surface of a substance, fine irregularities are generated on the surface, and as a result, the surface becomes hydrophilic. By blasting each of the above surfaces to make them hydrophilic, the liquid (droplets) attached to the surface can be spread over a wide range and can be easily evaporated.

  The blast treatment is preferably performed on a portion to which droplets discharged from the cleaning fluid nozzle 81 can adhere, that is, on as many portions as possible on the surface of the floor plate 53 and a member above the floor plate 53. It may be applied only to the part to be (that is, only a part of the surface of the floor board 53 and the member above it).

  As shown in FIG. 12, when the equilibrium contact angle on the solid surface is θ, the two solid surfaces intersect at an angled ridge (corner) (referenced RD) at a bending angle α. In this case, a phenomenon called “wetting pinning effect” is known in which a liquid droplet traveling toward a ridge does not advance beyond the ridge until the contact angle at the ridge exceeds θ + α. If a droplet stays at the edge due to the pinning effect of wetting, it takes a long time to evaporate the droplet, and thus drying in the chamber 20 is delayed. As a part where droplet retention due to the wetting pinning effect is likely to be a problem, for example, a ridge where the outer peripheral cylindrical part 101 and the protruding part 102 of the mist guard 100 intersect (part 100a surrounded by a one-dot chain line in FIG. 10). In addition, a ridge that faces the drainage port 54 of the floor plate 53, that is, an edge (a portion 53a surrounded by a one-dot chain line in FIG. 10) is exemplified. Since these ridges are at the lower end of the inclined surface, droplets are likely to collect. Further, as other portions where droplet retention due to the wetting pinning effect is likely to be a problem, a corner portion present in the nozzle arm 42, a corner portion present in the arm drive portion 43 (see also FIG. 11), and the like are exemplified. . In the second embodiment, R chamfering is performed on the above-described portion so that the wet pinning effect does not occur.

  If the mist guard 100 is removed from the configuration shown in FIGS. 9 and 10, the outermost and uppermost components of the liquid receiving cup 50, that is, the outer peripheral cylindrical portion 5011 of the exhaust cup 501 and the overhanging portion. It is conceivable that R chamfering is applied to the ridgeline where the portion 5012 intersects.

  The R chamfering is preferably performed on as many portions as possible of the ridges (corner portions) where the liquid droplets discharged from the cleaning fluid nozzle 81 can flow and stay, but even if only on the portions where drying delay is a problem. Good.

  The radius of curvature of the R chamfer for effectively preventing the pinning effect of wetting is 2 mm or more, and this radius of curvature of 2 mm or more is a chamfer performed for removing burrs in machining or safety of workers. Significantly larger than the radius of curvature of the chamfer for rounding the sharp edge.

  An example of the nozzle arm 42 and the arm driving unit 43 to which the blasting process and the R chamfering are applied is shown in FIG. The nozzle arm 42 has a base portion 421 and a rod-like portion 422. The base end portion of each rod-like portion 422 is fixed to the base portion 421. Each rod-like portion 422 is bent downward by approximately 90 degrees at the tip portion, and a nozzle 423 (corresponding to the nozzle 41 in the schematic diagram of FIG. 9) is provided at the lower end portion of the downwardly extending portion. Inside each rod-like portion 422, a treatment liquid flow path (not shown) that extends in the axial direction of each rod-like portion 422 and supplies the treatment liquid to the corresponding nozzle 423 is provided.

  The arm drive unit 43 includes a generally cylindrical base portion 431 and a generally cylindrical shaft portion 432. The base portion 431 is inserted into a hole provided in the floor plate 53, and is fixed to a frame (not shown) of the processing unit 16A below the floor plate 53. The shaft portion 432 can be moved up and down and rotated around a vertical axis by an actuator (not shown) built in the base portion 431.

  R chamfering is applied to the portion of the ridge 42RD where the side surface and the upper surface of the base portion 421 of the nozzle arm 42 intersect. You may provide R chamfering also in the part of the edge where adjacent side surfaces cross. The rod-like portion 422 of the nozzle arm 42 is cylindrical and has almost no corners. R chamfering is applied to the portion of the ridge 43RD where the side peripheral surface and the upper surface of the columnar base portion 431 of the arm driving portion 43 intersect. By providing the R chamfer (curvature radius of 2 mm or more) in this way, it is possible to prevent the wet pinning effect from occurring at the ridge or corner.

  Blasting is applied to at least a part of the surface of the base portion 421 of the nozzle arm 42, for example, the upper surface, preferably the entire surface of the base portion 421. Blasting is also applied to at least a part of the surface of the rod-like portion 422 of the nozzle arm 42, preferably the entire surface. Blasting is applied to at least a part of the side peripheral surface and the upper surface of the columnar base portion 431 of the arm driving portion 43, preferably the entire surface of the base portion 431. Thereby, the liquid (for example, IPA) adhering to the blasted surface spreads and is easily evaporated.

  Next, the operation of the processing unit 16A according to the second embodiment will be described.

  The processing (chemical solution processing step, rinsing step, solvent replacement step, and drying step) for the wafer W in the second embodiment is substantially the same as the processing for the wafer W in the first embodiment described above. Only the differences are described below. First, the height positions of the first movable cup element 5022 and the second movable cup element 5023 are switched according to the treatment liquid to be used (acid chemical liquid, alkaline chemical liquid, pure water, organic solvent), and the drainage cup 502 is used. Through a drainage passage (any one of the first drainage passage 502a for the organic liquid, the second drainage passage 502b for the acidic liquid, and the third drainage path 502c for the alkaline liquid) corresponding to the processing liquid to be processed. Drained. Further, the mist guard 100 is positioned at the high position HG in the chemical solution processing step, the rinsing step, and the solvent replacement step, and the processing solution scattered from the rotating wafer W is prevented from reaching the side wall 20 a of the chamber 20. The mist guard 100 is located at the low position LG when the drying process is performed.

  The steps constituting the chamber cleaning method according to the second embodiment (chamber cleaning step, chamber solvent supply step, chamber drying step) are substantially the same as the chamber 20 cleaning method according to the first embodiment. It is. Only the differences are described below.

  The mist guard 100 is positioned at the low position LG in all of the chamber cleaning process, the chamber solvent supply process, and the chamber drying process. This is because if the mist guard 100 is raised to the high position HG, the DIW and IPA mist discharged from the cleaning fluid nozzle 81 will not reach the chamber 20.

  When the in-chamber cleaning process is performed, the height positions of the first movable cup element 5022 and the second movable cup element 5023 are appropriately set, so that the second drainage passage 502b for acidic liquid or the second drainage path for alkaline liquid is used. 3. The drainage passage 502c is opened, and the cleaning fluid (DIW) from the cleaning fluid nozzle 81 entering the drainage cup 502 through the opened drainage passage is discharged. In this chamber cleaning step, if the atmosphere in the chamber 20 is a low humidity atmosphere, the cleaning liquid may evaporate and may not reach the chamber 20. Therefore, as in the first embodiment, clean air enters the chamber 20 from the FFU 21. (Not low humidity) is supplied.

  When the in-chamber solvent supply step is executed, the first drainage passage 502a for organic liquid is opened by appropriately setting the height positions of the first movable cup element 5022 and the second movable cup element 5023, and this first The IPA from the cleaning fluid nozzle 81 entering the drain cup 502 is discharged through the one drain passage 502a. The discharged IPA may be collected in the collection tank 65, and the collected IPA may be sent to the solvent supply source 84c of the solvent supply unit 84 via the IPA supply path 66 and reused. When this in-chamber solvent supply step is executed and when the in-chamber drying step is executed, the supply of clean air from the FFU 21 is stopped, and nitrogen gas is supplied from the low-humidity gas supply unit 28A through the nozzle 28a to the chamber. 20 is supplied. If the inside of the chamber 20 is in an oxygen atmosphere, there is a possibility that a stain due to oxygen may occur in the chamber 20. Therefore, the oxygen concentration in the chamber 20 is lowered by supplying nitrogen gas into the chamber 20.

  Since nitrogen gas is more expensive than dry air, dry air is used as the low-humidity gas supplied from the low-humidity gas supply unit 28A when liquid processing is performed on the wafer W, as in the first embodiment.

  In the second embodiment, the surface of the member to which the droplets discharged from the cleaning fluid nozzle 81 adhere is subjected to blasting. In general, since many of the members in the chamber are polymer material parts that are not highly hydrophilic, the droplets are difficult to spread, and it tends to take time for the liquid to evaporate (dry). However, by blasting the surface of the member, the surface of the member becomes hydrophilic and the liquid easily spreads. Therefore, the time required until the liquid evaporates (drys) can be shortened. That is, the IPA mist supplied in the in-chamber solvent supplying step can be evaporated in a short time during the in-chamber drying step. For this reason, it is possible to reduce the time required to execute the cleaning method in the chamber, and it is possible to reduce the downtime of the processing unit 16A.

  Further, in the second embodiment, the ridges (corners, edges) have an R chamfer with a radius of curvature of 2 mm or more. Therefore, liquid (IPA mist from the cleaning fluid nozzle 81) is applied to the ridges due to the wetting pinning effect. Is prevented or suppressed from remaining as droplets. This also makes it possible to evaporate the IPA mist supplied in the in-chamber solvent supply step in a short time during the in-chamber drying step, and to shorten the time required to execute the cleaning method in the chamber. Can do.

W substrate (semiconductor wafer)
4 Control unit (control device)
19 Storage unit 20 Processing chamber 20a, 53 Wall of processing chamber (side wall, floor board)
17 Transport mechanism (substrate transport device)
28 Low Humidity Gas Supply Unit 28e Heater for Heating Low Humidity Gas 31 Substrate Holding Unit 33 Rotation Drive Unit 41 Treatment Liquid Nozzle 42 Nozzle Arm 43 Arm Drive Unit 50 Liquid Receiving Cup 81, 83, 84 Cleaning Fluid Injection Unit 81 Cleaning Fluid Nozzle 83 Washing water supply part 83d Heater for heating cleaning water 84 Solvent supply part 84d Heater for heating solvent 90 Cleaning jig 93 Jig storage part 95 Heater for heating wall body 100 Mist guard

Claims (19)

A processing chamber;
A substrate holder for holding a substrate provided in the processing chamber;
A processing liquid nozzle for supplying a processing liquid to the substrate held by the substrate holding unit;
A liquid receiving cup that surrounds the substrate holding unit and collects the processing liquid scattered from the substrate held by the substrate holding unit;
A cleaning fluid ejecting unit that ejects water for cleaning the cleaning target portion in the processing chamber and a solvent having higher volatility than the water into the internal space of the processing chamber;
With
The cleaning fluid ejecting unit includes at least two cleaning fluid nozzles provided at a position higher than the liquid receiving cup and the processing liquid nozzle,
When the inside of the processing chamber is viewed from above, the at least two cleaning fluid nozzles are provided outside the liquid receiving cup so as to sandwich the liquid receiving cup,
Each of the cleaning fluid nozzles sprays the water in a mist form at least in a substantially horizontal direction and at least toward the liquid receiving cup, thereby filling the space in the processing chamber with the mist water. And spraying the solvent in a mist form at least in a substantially horizontal direction and at least toward the liquid receiving cup, thereby filling the space in the processing chamber with the mist solvent. Configured to be able to,
Substrate processing equipment. Before SL connected cleaning water supply and the solvent supply unit to the cleaning fluid nozzle, the one from the cleaning fluid nozzle of the water and the solvent can also be injected alone, the substrate processing apparatus according to claim 1. The cleaning fluid injection unit includes a heater for heating the solvent, the substrate processing apparatus according to claim 1 or 2 wherein. A low-humidity gas supply unit that supplies low-humidity gas into the processing chamber is further provided, and the low-humidity gas supply unit can selectively supply dry air and nitrogen gas as the low-humidity gas. is, the process by supplying the dry air into the processing chamber when the substrate held by the substrate holder in the chamber is processed, the processing chamber when cleaning the cleaning target portion of the processing chamber The substrate processing apparatus according to claim 1, further comprising a control unit that controls the low-humidity gas supply unit so as to supply nitrogen gas to the substrate. The substrate processing apparatus according to claim 4 , wherein the low-humidity gas supply unit includes a heater that heats the nitrogen gas. A rotation drive unit for rotating the substrate holding unit;
A transport mechanism for passing a cleaning jig to the substrate holder;
A control unit that rotates the substrate holding unit via the rotation driving unit;
Further comprising
The cleaning jig can be held by the substrate holding unit, and after the cleaning fluid ejecting unit finishes ejecting the solvent, the cleaning jig held by the substrate holding unit is rotated. The substrate processing apparatus according to claim 1, wherein an airflow for promoting drying of the cleaning target portion to which the solvent or the water adheres can be formed around the cleaning jig. . The substrate processing apparatus according to claim 6 , further comprising a jig storage portion for storing a cleaning jig. The process provided et al is in the chamber, further comprising a nozzle arm which holds the pre-Symbol treatment liquid nozzle, and the arm drive unit for moving the nozzle arm, the,
After the cleaning fluid ejecting unit finishes ejecting the solvent, the control unit drives the arm driving unit to position the nozzle arm above the cleaning jig to rotate, and the cleaning jig The substrate processing apparatus according to claim 6 , wherein drying of the lower surface of the nozzle arm to which the solvent or the water is attached is promoted by an airflow formed by the substrate. The substrate processing apparatus according to claim 1, further comprising a heater for heating the wall of the processing chamber.   The substrate processing apparatus according to claim 1, wherein the cleaning target portion includes a side wall of the processing chamber facing an internal space of the processing chamber.   The substrate processing apparatus according to claim 1, wherein a surface of a cleaning target portion to which a solvent sprayed from the cleaning fluid ejecting portion can adhere is blasted. An R chamfer having a radius of curvature of 2 mm or more is applied to a ridge where an upward surface of the member in the processing chamber to which a solvent sprayed from the cleaning fluid spraying unit can adhere and another surface intersects. 2. The substrate processing apparatus according to 1. The substrate processing apparatus according to claim 12 , wherein the member existing in the processing chamber subjected to the R chamfering includes a floor plate located between a side wall of the processing chamber and the cup. Surrounding the processing chamber, a substrate holding unit for holding a substrate provided in the processing chamber, a processing liquid nozzle for supplying a processing liquid to the substrate held by the substrate holding unit, and the substrate holding unit, In a processing chamber cleaning method for cleaning a cleaning target portion in the processing chamber of a substrate processing apparatus comprising a liquid receiving cup for recovering a processing liquid scattered from a substrate held by a holding unit ,
At least two cleaning fluid nozzles are provided at a position higher than the liquid receiving cup and the processing liquid nozzle, and when the inside of the processing chamber is viewed from above, the at least two cleaning fluid nozzles are configured to dispose the liquid receiving cup. Provided outside the liquid receiving cup to sandwich,
The process chamber cleaning method includes:
Water is sprayed from the at least two cleaning fluid nozzles into the processing chamber in a mist state at least in the horizontal direction and at least toward the liquid receiving cup, and the processing chamber is filled with the mist-like water. A cleaning step of filling, thereby wetting the object to be cleaned with water, and cleaning an object to be removed attached to the surface of the object to be cleaned;
From the at least two cleaning fluid nozzles, a solvent having higher volatility than water is sprayed into the processing chamber in a mist form at least in the horizontal direction and at least toward the liquid receiving cup . Filling with the mist solvent, thereby replacing the water adhering to the surface of the portion to be cleaned with the solvent,
A processing chamber cleaning method comprising: a drying step of drying a surface of the cleaning target portion. The process chamber cleaning method according to claim 14 , wherein the solvent is supplied in a heated state in the solvent supply step. The processing chamber cleaning method according to claim 14 , wherein nitrogen gas is supplied into the processing chamber in the drying step. In the drying step, a cleaning jig is held and rotated by a substrate holder provided in the processing chamber, thereby forming an airflow in a space above the cleaning jig, and the airflow The processing chamber cleaning method according to claim 14 , wherein drying of the cleaning target portion to which the solvent or the water adheres is promoted. In the drying step, a nozzle arm that holds a processing fluid nozzle for supplying a processing fluid to the substrate is positioned above the rotating cleaning jig, and thereby the nozzle arm to which the solvent or the water is attached The process chamber cleaning method according to claim 17 , wherein drying of the lower surface of the substrate is promoted. The process chamber cleaning method according to claim 14 , wherein in the drying step, the wall of the process chamber is heated by a heater provided on the wall.

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