TWI343664B - Light-blending light-emitting diode - Google Patents

Description

1343664 IX. Description of the invention: [Technical field to which the invention pertains] / The present invention relates to a light-mixing type light-emitting diode, and in particular, the present side replaces the county powder-like light-mixing county diode with the (four) silk film Body' [previous technique]

The stop-turn diodes can only be lightly fired—the gauges of the fixed wavelength range are, in principle, monopolized and cannot produce white light. In the prior art, approximate white light can be obtained by mixing a plurality of light rays, for example, a mixture of blue light and yellow light. The light may be from a different light emitting diode, or may be from a light converted from a single light-emitting diode and a portion of the original light through the phosphor powder, or may be a line. Early-lighting two-spray 11 shot of the original light _ different filament converted particles. The 'fluorescent powder is made into a kick shape, and then the light-emitting diode crystal light is covered, and it is still in the fluorescent powder glue. Therefore, the light emitted by the light-emitting diode is ϊίίίΓί. Light powder conversion. The unconverted component can control the dipole i! It is difficult to mix. However, the phosphor powder is coated with luminescence, and the control effect is difficult to control. In addition, after the previous ton of illuminating * illuminating diode gorge on the stage, a further processing is performed to increase the instability of the process.仏曰祖和口你你属 or fluorescent light "polar body, effective (four) fluorescent powder layer 1J436 & 4 [invention content] (four) irf-fan is to provide a kind of mixed light-emitting diode, using fluorescent ^. , instead of #丝胶' and between the reflection and the speech structure, there is a kind of light-mixing light-emitting diode, which is on the substrate-shaped money layer, and can be provided on the light-emitting structure. The light-emitting diode is coated with a phosphor powder only between the light-emitting semiconductor and the underside of the light-emitting semiconductor. (4) The light-emitting light-emitting diode comprises a light-transmitting substrate, a light-emitting semiconductor, a reflective electrode, and a - a light-emitting substrate having a first surface opposite to a second surface. The light-emitting semiconductor structure is formed on the surface of the light-emitting semiconductor structure. The reflective electrode is located above the light-emitting semiconductor structure and has a '&quot a gap 'where the reflective electrode is electrically connected to the light emitting semiconductor. The first phosphor powder layer is formed on the second surface. The light emitting semiconductor structure _ the light is reflected by the reflective electrode ΐι^ ΐ ίί board, the first layer of light powder travels. Part of the light will be converted by the first firefly, and the graded layer will be combined with the untransformed light cake. In addition, the 3ίϊίίίί light semiconductor structure connection can be avoided or Reduce this The heat generated by the luminescence is caused by the I, expansion and contraction of the luminescent semiconductor structure and the reflective electrode. For example, the void can allow the illuminant structure and the reflective electrode to be deformed to reduce the squeezing defects. Opportunity. In addition, the gap can also be filled with a single layer of dielectric or a multilayer dielectric to enhance adhesion between the luminescent semiconductor structures or to provide a diffractive skin dielectric that can be varied from several different The first U-pole body may further include a second glory powder layer formed between the semiconductor structure and the reflective electrode. The second phosphor layer may also be Filling the gap 0 Another light-mixing light-emitting diode of the present invention comprises a light-transmitting substrate, a light-emitting conductor structure, a -th phosphor powder layer, and a reflective electrode. The light-transmitting substrate has a second surface a second surface opposite to the first surface. The light emitting semiconductor structure is formed on the first surface. The first phosphor powder layer is formed on the light emitting semiconductor structure. The reflective electrode is located at the first phosphor powder Above the layer and with the first fluorescent There is a gap between the layers, wherein the reflective electrode is electrically connected to the light emitting semiconductor structure. • Therefore, one of the light radiating from the light emitting semiconductor structure passes through the first phosphor layer, and is reflected by the reflective electrode to the first fluorescent layer. The powder layer and the light transmissive substrate & a portion of the light will be converted by the first phosphor layer, and the converted light is mixed with the unconverted light. In addition, the reflective electrode and the first phosphor layer The gap may be filled with a single layer of dielectric or a multilayer dielectric to enhance the adhesion between the reflective electrode and the first phosphor layer, or may provide a diffraction effect to enhance the reflection effect. The illuminating electrode may further comprise a second phosphor layer formed on the second surface of the transparent substrate. The light-mixing light-emitting diode comprises a stage, a light-emitting semiconductor structure and a light-transmissive substrate. The light emitting semiconductor structure is disposed on the stage and has a gap with the stage. The light emitting semiconductor structure is electrically connected to the stage. The light transmissive substrate is located on the light emitting semiconductor structure. In addition, a phosphor powder is only filled in the gap directly below the light emitting semiconductor structure. Therefore, one of the radiation of the light-emitting semiconductor structure passes through the phosphor powder, and is reflected by the stage to travel toward the light-transmitting substrate. Part of the light will be converted by the phosphor powder. The converted light is then mixed with the unconverted light. Additionally, the stage may have a reflective layer to enhance the reflective effect, and the light emitting semiconductor structure is disposed over the reflective layer. In addition, the light emitting diode may further comprise a phosphor layer to form 7 1343664 on the transparent substrate. The photo-emitting diode further includes a selective reflection layer formed on the transparent substrate. The selected reflective layer can be formed from a single dielectric or acoustic layer. The portion of the filament of the second shot is reflected by the selectively reflective layer and travels toward the (10) biliary gel. Wei shot ί ° by this can increase the converted light ^

The CIE coordinate value of the color temperature of the mixed light. In addition, the selective reflective layer includes a through-hole or a pattern mask to control the area of selective reflection. The other-light-mixing type light-emitting diode of the present invention comprises a stage, a first glory layer, a hairline conductor structure, and a light-transmitting substrate. On the stage. The illuminating semiconductor structure is electrically connected to the stage, wherein the illuminating semiconductor structure is electrically connected to the stage. The light transmissive substrate is located on the light emitting semiconductor structure.

Therefore, the deductive county is constructed to pass light through the first phosphor powder layer and then reflected by the stage and (4) the transparent substrate travels. Part of the light will be converted by the first layer of light, and the converted light will be mixed with the unconverted light. Further, the reflective layer is provided to enhance reflection and the first filament is formed on the reflective layer. In one embodiment, the light emitting diode may further include a phosphor powder layer formed on the light transmissive substrate. In addition, the wire-type light-emitting diode further includes a selective reflection layer formed on the light-transmitting substrate. The selective reflective layer is formed from a single layer of dielectric or a plurality of layers of 'I. The multilayer dielectric can be composed of several different dielectrics. The other portion of the illuminating semiconductor structure that is radiated is reflected by the selectively reflective layer and travels toward the transparent substrate and the first-filament layer. The reflected slit will also be partially converted by the first phosphor layer as described above. Thereby, the ratio of the converted light lines can be increased, and the CIE coordinate value such as the color temperature of the mixed light can be adjusted. In addition, the selective reflection layer includes a through hole or a pattern mask to control the area of selective reflection. Another light-mixing light-emitting diode of the present invention comprises a light-transmitting substrate, a light-emitting half, a body structure, a selective reflection layer and a phosphor powder layer. The light transmissive substrate has a second surface and a second surface opposite the first surface. The light emitting semiconductor structure is formed on the first surface. The selective reflective layer is on the light emitting semiconductor structure. The phosphor layer is formed on the second surface. The selective reflective layer is formed from a single layer of dielectric or a multilayer dielectric. The multilayer dielectric can be composed of several different dielectrics. Therefore, a portion of one of the rays of the light emitting semiconductor structure is reflected by the selective reflective layer to travel toward the light transmissive substrate and the phosphor layer. In addition, the selective reflective layer includes a via or a patterned mask to control the area of selective reflection. Thereby, the proportion of the converted light can be increased, and the CIE coordinate value such as the color temperature of the mixed light can be adjusted. In addition, in practical applications, the stage carrying the light-mixing type light-emitting diode may form a reflection layer to reverse the light traveling toward the stage. Another light-mixing type light-emitting diode of the present invention comprises a substrate, a first phosphor layer and a light-emitting semiconductor structure. The first phosphor layer is formed on the substrate. The light emitting semiconductor structure is formed on the first phosphor layer. In a specific embodiment, a selective anti-riding can be formed on the light emitting semiconductor structure, and a second phosphor layer is formed on the selective reflective layer. Similarly, in another embodiment, a third glory layer can be formed over the light emitting semiconductor structure. A selective reflection layer may be further formed on the third glory layer. Thus, a light ray radiated by the illuminating semiconductor structure will be reflected by the selective reflective layer L and partially converted by the luminescent phosphor layers. It is mixed with unconverted light to form the desired light. In addition, the light-mixing type and the substrate of the light-polar body are not required to be transparent. In addition, the light conversion and the optical line from the main bribes will not be repeated here. The reflective reflective layer can be formed by a single layer of 1343664 dielectric or a multilayer dielectric. The multilayer dielectric can be composed of several different dielectrics. The selective reflective layer includes a via or a patterned mask to control the area of the selective reflection. In summary, according to the present invention, the phosphor layer can be directly on the semiconductor structure or the light-transmissive substrate, and the purpose of controlling the light mixing can be completed in the semiconductor process. In addition, the reflective electrode is connected to the light-emitting semi-conductor, but there is a gap between them to avoid an interface problem if the anti-contact is in contact with the contact. In addition, in the light-mixing type including the stage, the glory powder can be formed on the stage, and the same can avoid the transmission, the sample process, the filament winding method, and the light mixing control (4) problem. In the light-mixing type light-emitting diode, the fluorescent powder is only filled under the structure of the ΐΐ ί , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , Further, the effect of controlling the light mixing is achieved by selectively reducing the amount of converted light. Moreover, the selection may also include a plurality of through holes or a mask formed by a geometric shape, and the effect of controlling the light of the pepper. According to the mixed light-emitting diode of the present invention, the disadvantages of the technique "i" have been solved or mitigated. The point and spirit of the present invention can be illustrated by the following detailed description and the accompanying drawings. Mixed =: 』 7! = according to =: Bu Jia specific embodiment 18. The wire plate ^ and the structure of the reflective electrode 16 and the first surface of the first phosphor layer 12 Ϊ. Hair 2] 122 and A wire 122 opposite electrode 16 is formed on the surface of the first surface. The reflection has a gap G丨, and is disposed between the light emitting semiconductor structure 14 and the middle reflective electrode 16 is a conductor 162 and a light emitting semiconductor structure 14

S 10 Electrical connection. The first phosphor layer 18 is formed on the second surface 124. Therefore, the light u radiated by the light-emitting semiconductor structure 14 is reflected by the reflective electrode 16 to travel toward the light guide plate 12 and the first-county powder layer 18 (indicated by a hollow arrow). In part, the light ray L1 is converted by the first phosphor powder layer 18, and the converted light ray L12 is mixed with the unconverted light ray L14. In addition, the reflective electrode 16 is not directly connected to the illuminating semiconductor structure, and the luminescent semiconductor structure W generated by the illuminating semiconductor structure 14 during illuminating and the counter-polarity 16 to be subjected to shrinkage can be avoided or reduced. For example, the gap G1 may allow the light emitting semiconductor structure 14 and the reflective electrode 16 to be deformed to reduce the chance of defects caused by extrusion. In addition, the G1 can also be filled—a single-layer dielectric or a multi-layer dielectric (not shown in the figure-scale dielectric can be attached between the emitter electrode 16 and the light-emitting semiconductor structure I4) or can be provided A diffractive effect (such as a Bragg mirror) to improve the reflection effect: the dielectric material can be composed of several different dielectric materials. In addition, the light-mixing LED 2 can further include a second light. The powder layer is mixed with the reflective semiconductor electrode I6 (not shown in FIG. 1). That is, the light L1 is partially converted by the second phosphor layer before being reflexed. The thickness of the powder layer is logically increased to help control the light mixing effect. It is added that the first phosphor layer 18 and the second phosphor layer can be incorporated into the light emitting semiconductor structure 14 and the transparent substrate 12 The process is formed by yellow light lithography. In addition, the foregoing description only points out the path of the light-emitting semiconductor structure 14 to the light L1 radiated toward the reflective electrode 16, and the light-emitting semiconductor structure 14 is of course radiated directly toward the transparent substrate 12 and the first phosphor layer 18 Light, this light will also be partially illuminated by the first The layer 18 is converted and mixed with the aforementioned converted light U2 and the unconverted light L14. In addition, the light-mixing light-emitting diode is not limited to a flip chip packaging application. In practical applications, The stage carrying the light-mixing type light-emitting diode 1 may form a reflective layer to reflect the light traveling toward the stage.

The second embodiment of the present invention is based on the second preferred embodiment of the present invention and the second phosphor plate and the third phosphor powder (four). And 盥笫 on one side 322. The first-th light-emitting semiconductor structure 34 is formed on the first and second phosphor powder layers t 8 on the light-emitting semiconductor structure 34. The second is. Q/C v 'S- ΒΛ There is a gap G3 between the layers 38, wherein the reflective snow 36 is electrically connected to the light-emitting semiconductor structure 34 by a conductor 362.

Therefore, the light U radiated by the light-emitting semiconductor structure 34 passes through the light of the first light to be converted by the first camp powder layer 38. After being not reflected by the second line L34, after being reflected by the reflective electrode 36, it will pass through the first flashover again. The light U4 that is still unconverted will be converted by the first phosphor layer 38' ^Ϊίί. In the case of the two phosphor layers 40, the partial light U44 is converted by the second phosphor layer 4G. Finally, all unconverted light L3444 and the converted light L32, L342, L3442 are converted by the desired light, which is reflected by the light-emitting semiconductor structure 34 but not reflected by 36, directly through the second phosphor 4g. And not i light map three towels). The (4) mixed mark can be obtained by controlling the thickness of the fluorescent roll/agricultural layer and the phosphor layer. It is to be noted that, based on the foregoing description of the second preferred embodiment, the phosphor powder layer 38 is identical to the second phosphor layer 4A. However, the invention is not limited thereto. When the first phosphor layer 38 is different from the second phosphor layer 40, the light conversion process complicates the crane. The substantially mixed light comprises light converted by the first phosphor layer 38, light converted by the second phosphor layer 40, and light radiated by the light emitting semiconductor structure 34 but not converted. Incidentally, the foregoing description is equally applicable to the first preferred embodiment. In addition, the first phosphor powder layer 38 and the second phosphor powder layer 40 can be incorporated into the light emitting semiconductor structure 34 and the transparent substrate 32 to form a yellow light lithography. According to a second preferred embodiment, the gap G3 can also be filled with a single layer of dielectric t dielectric (not shown in Figure 2). The dielectrics may enhance adhesion between the reflective phosphor layer 38 of the reflective electrode or may provide a diffractive effect to enhance reflection. The multilayer dielectric may be comprised of several different dielectrics. In addition, with regard to the hair, the light path of the conductor structure 34, and the second embodiment, will not be described again. Further, the application description of the light-mixing type light-emitting diode 3 is also the same as that of the light-mixing type light-emitting diode of the preferred embodiment, and will not be described again. Referring to FIG. 2A, FIG. 3A is a schematic diagram showing a third preferred embodiment of the light-mixing light-emitting diode 5 according to the present invention. The light-mixing light-emitting diode 5 includes a squeezing plate 52, a light-emitting semiconductor structure 54, a stage 56, a phosphor powder 58 and a luminescent layer 58. The light-emitting semiconductor structure 54 is disposed on the stage 56 and on the stage 56, The two-gap G5' is in which the light-emitting semiconductor structure 54 is electrically connected to the stage 56 by the bump 542. The light-transmitting substrate 52 is located on the light-emitting semiconductor structure 54. The phosphor powder wins _G5 directly below the light-emitting semiconductor structure 54. And the amount of the light-powder glue 58 is 'and the effect of the light mixing is further controlled. Further, the phosphor layer 6 is formed on the light-transmitting substrate 52. 4 2 'Light-emitting semiconductor structure 54 light rays L5 traverses the phosphor powder to win 58 sets of 56 reflections and travels toward the transparent substrate 52. Part of the light L5 will be converted by the dragged 258 or glory layer 6 ,, and the converted light L52 is not transferred: The L54 is mixed to produce the desired light. The details of the light conversion have been described above. In addition, the stage 56 may have an inverse _ 562 to strengthen the reverse 1 conductor structure 54 and be placed over the reverse _ 562. Light-emitting semiconductor structure % and light-transmitting substrate 52 mixed light ΐ 图 = Figure S i shows the basis of the present invention - Example embodiments of the mesh-type ^ mixed light emitting diode 5, further comprising a selectively reflective layer 62 is formed over the transparent plate 52 filaments. Selective trans

(S 13 1343664 * . $ or - multilayer dielectric formation. The multilayer dielectric can be illuminated by several different dielectrics. The wavelength range is determined by the characteristics of the selective reflective layer. After L64, the light L5, which is preferably embodied in the third preferred embodiment, is partially converted by the phosphor powder 58. Thereby, the ratio of the converted light can be added to further adjust the color of the mixed light to the alpha-seat bar value.

In the light body, the proportion of yellow light is increased, so that the mixed white light sees the selective reflection layer 62 on which a plurality of through holes or a mask of 4 screaming can be formed to adjust the selective inverse (four) area. For = means of mixing proportions. Wherein, the wearing faces of the through holes are not limited to a circle, and the through holes may also be slits or other geometric shapes=the mixed light emitting diodes 5 of the body are still included - the glory powder The selective reflection layer 62 of the f-electrode body 5· can also be formed on the glory powder layer 60'. . Referring to Figure 4A, Figure 4A is a schematic view showing a fourth preferred embodiment of the light-mixing type light-emitting diode 7 according to the present invention. The light-emitting diode 7 includes a light-transmitting base

ίΙΙ, ί光半_structure 74, stage 76, first phosphor powder layer 78 and second phosphor layer 80. The first phosphor powder layer 78 is formed on the stage %. The light-emitting junction=4 is disposed above the first-county-score 78 and is separated from the first-silver layer 78 by a gap G7, wherein the light-emitting semiconductor structure 74 is electrically connected to the stage by a bump, and the ίίί 72 is located in the light-emitting layer. On the semiconductor structure 74. The second phosphor layer 8 is formed on the light-transmitting substrate 72. Therefore, the light L7 radiated by the light-emitting semiconductor structure 74 is reflected by the first phosphor layer carrier 76 and travels toward the light-transmitting substrate 72. Part of the light ray L7 will be converted by the "layer 78 or the first phosphor layer 80". The converted light ray L72 is mixed with the unconverted light ray L74 to produce the desired light. The details of the optical noise exchange are as described above. Further, the stage 76 may have a reflective layer to enhance reflection, and a first phosphor powder layer 78 is formed on the reflective layer 762. Supplement 14 1343664 shows that the second phosphor The process of the layer 80 being incorporated into the light-emitting semiconductor structure 74 and the light-transmitting substrate 72 is formed by yellow light lithography. See Figure 4B, and Figure 4B shows the light-mixing light-emitting diode 7' according to an embodiment. The light-mixing light-emitting diode τ further includes 2 on the light-transmitting substrate 72. The selective reflection layer & a single sheet is compared with the light-mixing light-emitting diode 7 of the fourth preferred embodiment. a layer of dielectric material or a layer of dielectric material. The multilayer dielectric material may be composed of a plurality of non-materials. The light beam L8 emitted from the light-emitting semiconductor structure 74 toward the light-transmitting plate 72 n, only part of the light L82 may pass through. The selective reflection layer 82, and the others are reflected by the selective reflection layer 82. L82 has a wavelength range which is reflected by the selective reflection layer. The light U4 is also reflected as the light L7 of the fourth preferred embodiment (as shown in FIG. 4A), and is partially replaced by the first firefly. The toner layer 78 is converted to increase the proportion of the converted light. In addition, the selective reflection layer 82 may have a plurality of through holes or a mask formed by a geometric shape as an adjustment & It can also be used as a means for controlling the mixing ratio, wherein the holes of the through holes can also be slits or other geometric shapes. The selective reflection layer I of the complementary light-emitting diode 7' " On the powder layer 80, it will not be described. Mixing = The fifth preferred embodiment of Misan County (4) is a schematic diagram of the i-pole body 9. The light-mixing type light-emitting diode 9 includes a light-transmitting ί%% through plate-surface 922 and with the first table Semiconductor structure 94 is formed on first surface 922. The selective/reflective layer % is formed on the light emitting semiconductor layer. "Electro-mass forming the multilayer dielectric can be composed of several different dielectrics. Thus the light-emitting semiconductor structure 94_one light L9 is selectively reflective.

S 15 1343664 » 96 partially reflects and travels toward the light transmissive substrate 92 and the phosphor layer 98. The light of the L92 is characterized by the transversal inverse (four)%.

The emitted light L94 will be partially converted by the filament layer 98, and its conversion system has been described as no more. Further, the 'selectively reflective layer 96' may comprise a plurality of vias or areas that are patterned by geometry to (4) select the area of the reflection. Wherein, the cross-sections of the through holes are not limited to the shape, and the through holes may also be slits or & By this, the ratio of the converted light can be increased, and the CIE coordinate value such as the color temperature of the mixed light of the section can be reached. In addition, the supplementary description of the optical path of the light-emitting semiconductor structure % is the same as that of the first preferred embodiment, and will not be described again. Further, the application of the light-mixing type light-emitting diode 9 will not be described again in the case of the light-mixing type light-emitting body 1 of the first embodiment. For example, when the light-mixing type light-emitting diode 9 of the fifth preferred embodiment is packaged in a face up structure, the surface of the stage carrying the light-mixing type light-emitting diode 9 may form a reflective layer. In order to enhance the reflection of the light traveling toward the stage (including the reflected L94), the reflected light finally allows the disk to be allowed to pass through the stage L92, _ picking light. ^

Please refer to FIG. 6A'. FIG. 6A is a schematic view showing a sixth preferred embodiment of the light-mixing light-emitting diode 2 according to the present invention. The light-mixing type light-emitting diode 2 includes a substrate 22, a phosphor powder layer 26, and a light-emitting semiconductor structure %. The phosphor layer % is formed on the substrate 22. The light-emitting semiconductor structure % is formed on the camping powder layer %. Further, a further phosphor layer 28 can be formed on the luminescent body structure 24, and a selective reflection layer 29 can be formed on the phosphor layer 28. Therefore, the light that is incident on the selective reflection layer 29 by the light-emitting semiconductor structure 24 is selectively reflected by the selective reflection layer 29 regardless of whether it is converted by the phosphor layer 28. In addition, since the selective reflection layer 29 allows a specific wavelength range of 2 to pass through, the rest will be reflected, so that it is possible that the converted light can be made by selecting the 1+ layer 29' without the converted light. This choice is the whole product set » and 疋. The reflected light will be partially converted by the phosphor layers 26, 28 and then reflected by the substrate 22 (if the substrate 22 is not transparent, but the invention is not limited thereto). After being reflected, the light will be selectively reflected again by the selective reflection layer 29. 13436, 64 ' .. * ·. Finally, the light passing through the selective reflection layer 29 is mixed into a desired light. - Further, the selective reflection layer 29 may comprise a plurality of vias or masks patterned by geometry to control the area of selective reflection. Wherein, the cross-sections of the through holes are not limited to a circle' and the through holes may also be slits or other geometric shapes. By this, you can increase the proportion of the converted light. The selective reflection layer 29 is formed of a single layer of a dielectric or a multilayer dielectric. The multilayer dielectric can be composed of several different dielectric materials. Further, the main descriptions of the "light conversion" and the light path are the same as those described above, and will not be described again here. • Referring to FIG. 6B, FIG. 6B is a schematic diagram showing a light-mixing light-emitting diode 2' according to an embodiment. In comparison with the sixth preferred embodiment, the phosphor layer 28 of the light-mixing type LED 2' is positioned above the selective reflection layer 29. Therefore, the light passing through the selective reflection layer 29 will be partially converted by the phosphor layer 28 and then mixed to form the desired light. It should be noted that, in the foregoing embodiment, the light passing through the selective reflection layer contains light rays passing through the hollow portions of the selective reflection layer (ie, the aforementioned through holes and the mask gaps), and includes only the selectively reflective layer. Light that is allowed to pass through a specific range of wavelengths. Further, the light-mixing type light-emitting diode of the present invention is not limited to the application for generating white light. # The light-mixing light-emitting diode of the present invention can also mix light of different colors according to requirements. In summary, the phosphor layers can be formed directly on the light emitting semiconductor structure or the light transmissive substrate and can be completed in the semiconductor process to effectively achieve the purpose of controlling the light mixing. In addition, the reflective electrode is electrically connected to the light-emitting semiconductor structure, but there is a gap therebetween, which avoids the interface problem caused when the reflective electrode is in direct contact with the light-emitting semiconductor structure. In addition, in the light-mixing type light-emitting diode including the stage, the phosphor powder layer can be formed on the stage, and the problem that the conventional process is difficult to control the light mixing by the phosphor powder packaging method can be avoided. In the light-mixing light-emitting diode using only the fluorescent powder, the fluorescent powder is only filled in the gap directly under the light-emitting semiconductor structure, which can effectively control the usage and distribution of the fluorescent powder, and thus control Mixed light effect. Further _ 17 use f selective reflective layer to increase the amount of converted light, in order to achieve the embossed, the selective reflection layer can also contain a plurality of through holes or a mixed light-emitting type The effect of the sergeant first. Therefore, according to the scope of the present invention, the lack of prior reading has been solved or reduced the details of the specific implementation of the invention, and it is hoped that the limitations of this and the day will be more clearly described. On the contrary, the purpose is to envisage a variety of female volleyballs in the patent scope of the present invention. ί 广 ii Ming: 范畴ί The scope of the patent scope should be interpreted according to the above descriptions so that it covers all possible changes and equal arrangements 芄 [Simple diagram] One map A schematic view of a light-mixing light-emitting diode according to a first preferred embodiment of the present invention. Fig. 2 is a schematic view showing a light-mixing type light-emitting diode according to a second preferred embodiment of the present invention. Figure 2A is a schematic view showing a light-mixing light-emitting diode according to a third preferred embodiment of the present invention. 2 is a schematic view showing a light-mixing type light-emitting diode according to a specific embodiment. FIG. 4 is a schematic view showing a light-mixing type nine-diode according to a fourth preferred embodiment of the present invention. . Figure. Figure 4B is a schematic view of a light-mixing type light-emitting diode according to a specific embodiment; a schematic diagram of a light-mixing type light-emitting type according to the fifth difficulty of the present invention. # -ΞϋA A schematic view of a light-mixing type one-pole body according to a sixth preferred embodiment of the present invention. Figure. Figure ', B' shows the schematic of the complex light-emitting diode according to the specific reality [main component symbol description], 7, 7, 9: mixed light-emitting diode 12m52'72, 92: silk Plate 1344664 14, 24, 34, 54, 74, 94: Light-emitting semiconductor structures 16, 36: reflective electrodes 18, 38, 78: first phosphor layer 40, 80 · second phosphor layer 56, 76: Stage 58: phosphor powder 26, 28, 60, 98: phosphor layer 29, 62, 82, 96: selective reflective layer 122, 322, 922: first surface 124, 324, 924: second surface • 162, 362: Conductors 542, 742: Bumps 562, 762: Reflective layers U, L3, L5, L6, L7, L9: Light L12, L32, L52, L72, L342, L3442: Converted light L14, L34, L54, L74, L344, L3444: unconverted light L62, L82, L92: penetrating light® L64, L84, L94: reflected light G Bu G3, G5, G7: gap 20

Claims (1)

1343064 Υ0年3方1€Revision and replacement page X. Patent application scope: 1 _ A light-mixing light-emitting diode comprising: a light-transmitting substrate having a first surface and opposite to the first surface a second surface; a light emitting semiconductor structure is formed on the first surface; a reflective electrode is disposed on the light emitting semiconductor structure and has a gap between the light emitting semiconductor structure and wherein the reflective electrode is electrically connected to the light emitting semiconductor structure Wherein the gap is filled with a single layer of dielectric or a multilayer dielectric. And a first phosphor layer is formed on the second surface; wherein the light-emitting semiconductor junction is reflected by the reflective electrode to travel toward the transparent substrate and the first phosphor layer. 2. The light-mixing light-emitting diode according to claim i, wherein the multilayer dielectric comprises at least two or more dielectrics. 3. The light-mixing light-emitting diode of claim i, further comprising a second phosphor layer formed between the light-emitting semiconductor structure and the reflective electrode. 4. A light-mixing light-emitting diode comprising: a light-transmitting substrate having a first surface and a second surface opposite to the first surface; a light-emitting semiconductor structure formed on the first surface a first phosphor layer is formed on the light emitting semiconductor structure; and a reflective electrode is located on the first phosphor powder layer and has a gap between the first and second phosphor layers, wherein the reflective electrode and the light emitting semiconductor The structure is electrically connected to the cathode; wherein, after the radiation layer of the light emitting semiconductor structure is reflected by the reflective electrode, the substrate travels. Passing one of the light rays through the first phosphor powder to the first phosphor powder layer and the light transmissive 5. Filling a light-mixing light-emitting diode (10) as described in the Patent Application No. 4-6. Single layer dielectric or - multilayer dielectric. The light-mixing type light-emitting diode according to Item 5, wherein the dielectric layer contains at least two or more kinds of dielectric materials. In the light-mixing type light-emitting diode according to Item 4 of the patent application, a first-fluorescent powder layer is formed on the second surface. 8. A light-mixing light-emitting diode comprising: a carrier; a light-emitting semiconductor structure disposed on the stage and having a gap therebetween; wherein the germanium light-emitting semiconductor structure is electrically connected to the stage; The light substrate is located on the light emitting semiconductor structure; wherein a phosphor powder is only filled in the gap directly under the light emitting semiconductor structure. 9. The light-mixing type light-emitting diode according to claim 8, wherein the side cutting stage comprises a reflective layer, and the light-emitting semiconductor structure is disposed on the reflective layer. 10. The light-mixing type light-emitting diode according to claim 8, further comprising a selective reflection layer formed on the light-transmitting substrate. 11. The light-mixing light-emitting diode according to claim 10, wherein the selective reflection layer is a single layer dielectric or a multilayer dielectric material 22 1,00. 3 4L5- </ RTI> <RTIgt; </ RTI> <RTIgt; </ RTI> <RTIgt; </ RTI> <RTIgt; </ RTI> <RTIgt; </ RTI> <RTIgt; 13. The light-mixing type light-emitting diode according to the first aspect of the invention, wherein the selective reflection layer comprises a through hole or a pattern mask. 14' The light-mixing type light-emitting diode according to the eighth aspect of the patent application, further comprising a phosphor powder layer formed on the light-transmitting substrate. 15. A light-mixing light-emitting diode comprising: a carrier; a first phosphor layer formed on the stage; a light-emitting semiconductor structure disposed on the first phosphor layer and There is a gap between the private layers of the work light, wherein the light emitting semiconductor structure is electrically connected to the stage; and a light transmissive substrate is located on the light emitting semiconductor structure. The light-mixing type light-emitting diode according to the fifteenth aspect of the invention, wherein the stage comprises a reflective layer, and the first phosphor layer is formed on the reflective layer. 17. The light-mixing type light-emitting diode according to the fifteenth aspect of the invention, wherein the step-selective-selective reflection layer is formed on the light-transmitting substrate. 18. The light-mixing type light-emitting diode according to item 17 of the patent application, wherein. The mysterious selective reflection layer is formed by a single layer of dielectric or a multilayer dielectric. 19. The light-mixing type light-emitting diode according to claim 18, wherein the dielectric layer comprises at least two or more dielectric materials. 2. The mixed light-emitting diode according to claim 17, wherein the selective reflection layer comprises a through hole or a graphic mask. The light-mixing type light-emitting diode according to claim 5, further comprising a second phosphor powder layer formed on the light-transmitting substrate. 22. A light-mixing light-emitting diode comprising a transparent substrate having a first surface and a second surface opposite to the first surface; a light emitting semiconductor structure is formed on the first surface; a selective reflective layer is located in the light emitting semiconductor Structurally; and a phosphor layer is formed on the second surface; wherein a portion of the light radiated by the light emitting semiconductor structure is partially reflected by the selective reflective layer to travel toward the transparent substrate and the phosphor layer. 23. The light-mixing light-emitting diode according to claim 22, wherein the selective reflection layer is formed by a single layer of dielectric or a multilayer dielectric. Mixed light as described in 23 items A light-emitting diode, wherein the multilayer dielectric comprises at least two or more dielectric materials. 25. The light-mixing light-emitting diode according to claim 22, wherein the selective reflection layer comprises a pass. a light-filling type light-emitting diode, comprising: a substrate; a first phosphor layer formed on the substrate; a light-emitting semiconductor structure formed on the first phosphor layer And a selective reflection layer is formed on the light-emitting semiconductor structure. 27. The light-mixing type light-emitting diode according to claim 26 of the patent application, in the 24th month, the modified page step I3, a fluorescent powder The layer is formed on the selective reflection layer. 2. The light-mixing type light-emitting diode according to claim 26, wherein the selective reflection layer is a single layer dielectric or a multilayer dielectric material. The light-mixing light-emitting diode according to claim 28, wherein the dielectric material comprises at least two or more dielectric materials. 30. The wave according to claim 26 of claim (4) Light-emitting diode, wherein "Hai selective reflection layer includes - through hole _Graphic mask 31. The light-mixing type light-emitting diode according to claim 26 of the patent application, the progress comprising a third phosphor layer to form the light-emitting semiconductor structure. The light-mixing light-emitting diode further comprises a selective reflection layer formed on the third phosphor layer. 33. The light-mixing light-emitting diode according to claim 32 The sinusoidal selective reflective layer is formed by a single layer of dielectric material or a multilayer dielectric material. 34. The light-mixing type light-emitting diode according to claim 33, wherein the multilayer dielectric material The material includes at least two or more kinds of dielectric materials. The light-emitting type light-emitting diode according to claim 32, wherein the selective reflection layer comprises a through hole or a pattern mask. 25