TW201201355A - Light emitting diode package, lighting apparatus having the same, and method for manufacturing light emitting diode package - Google Patents

Abstract

A light emitting diode (LED) package, a lighting apparatus including the same, and a method for manufacturing an LED package are disclosed. The LED package includes: a package substrate; an LED chip mounted on the package substrate; and a wavelength conversion layer formed to cover at least a portion of an upper surface of the LED chip when a surface formed by the LED chip when viewed from above is defined as the upper surface of the LED chip, wherein the wavelength conversion layer is formed so as not to exceed the area of the upper surface of the LED chip and includes a flat surface parallel to the upper surface of the LED chip and curved surfaces connecting the corners of the upper surface of the LED chip.

Description

201201355 VI. Invention Description: [Reciprocal Reference of Related Applications] This application claims Korean Patent Application No. 10-2010-0034693 filed on April 15, 2010 by the Korea Intellectual Property Office and December 14, 2010 Priority of Japanese Patent Application No. 10-2010-0127774, the disclosure of which is incorporated herein by reference. BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a light emitting diode package, a lighting device therewith, and a method of manufacturing the light emitting diode package. [Prior Art] Recently, a light-emitting diode (LED) has been applied to various devices in various cities, such as a keyboard, a backlight, a traffic sign, a guide light of an airport runway, a lighting bulb, and the like. With the application of LEDs in various fields, the importance of packaging LED technology has emerged. In prior art LED packages, the first and second leadframes are disposed within the package body and the LED wafer is mounted on the first leadframe. The first and second lead frames are electrically connected by wires. In this case, the package body has a cup shape and a resin member is formed in the cup to protect the LED chip, the electric wire, and the like. In the resin member, a phosphor powder (or a fluorescent material) for converting the wavelength of light to allow white light to be emitted from the LED wafer can be dispersed in the resin member. However, in the prior art, light emitted from the LED wafer is reflected and diffused a plurality of times in the resin member to be incident on the package body, the first and second lead frames, etc., and the energy lost is equal to the absorption rate of each surface. That is, 4 95182 201201355 When the amount of incident light is 1 and the reflectance of each surface is R, the portion of the incident light that is absorbed and dissipated (ie, disappears) is (1_R). Further, the 'filled resin member' is emitted from the entire inner surface of the cup-shaped seal member body and the light is emitted from the entire surface of the resin member, thereby increasing the etendue of the LED package. Therefore, prior art LED packages cannot be applied to applications requiring low etendue sources, such as light sources for camera flashes, camera headlights, projectors, and the like. Here, the etendue is the value obtained by multiplying the solid angle of the illuminating light by the area of the light source, which increases as the area of the light source increases. Further, in the prior art, the color temperature deviation of the light is generated on the light emitting surface of the LED wafer, so that when the ray pattern of the emitted light is viewed through the lens, the color blur (col()r blur) of the bull's eye is excessively appeared. SUMMARY OF THE INVENTION The present invention provides a light-emitting diode (10) package having improved luminous efficiency, which is compared with other products, which emits light having a uniform color temperature from the light-emitting surface of the LED chip, and There is a reduced color temperature change' - a method of manufacturing the LED closure, and a lighting device having the package. According to an aspect of the present invention, a light emitting diode (LED) package is provided, comprising: a package substrate; a wafer mounted on the package substrate; and a wavelength conversion layer formed by Covering at least a portion of the upper surface of the LED wafer and defining a surface of the LED wafer from a top view as the upper surface of the LED wafer, wherein the wavelength conversion layer is formed not to exceed the upper surface of the LED wafer The region also includes a flat surface parallel to the upper surface of the cymbal of the 95182 5 201201355 and a curved surface connecting the corners of the upper surface of the LED wafer. The LED package can further include a light reflecting layer formed on the sealing substrate to surround a side of the LED wafer. The light reflecting layer may be made of a material containing titanium oxide (7) (6). The LED package can further include: a light distribution layer covering the wavelength conversion layer and the light reflection layer. The Haiguang knife layer can be made of a material containing cerium oxide (3) (6). The (four) package may further include a dam formed on the package substrate to define a (10) wafer, the light reflecting layer, and the light distribution layer. The dam may be made of a material containing a resin. The LED package can further comprise: a transparent cover layer overlying the wafer. The package substrate can be made of a ceramic-containing material. The wavelength conversion layer may be made of a material containing a transparent resin and a fluorescent powder. The weight ratio of the phosphor powder to the transparent material may be equal to 2: 丨 or more. The LED chip may include: a structural support layer made of a conductive material; and a light emitting structure formed on a surface of the structural support layer and including a P-type semiconductor layer, an active layer, and an n-type semiconductor layer. The light emitting structure may be formed on a portion of the surface of the structural support layer, and the upper surface of the LED chip may include a surface of the light emitting structure and other of the surface of the structural support layer where the light emitting structure is not formed. And comprising: a growth substrate; and, a hair = 95182 6 201201355 = formed on the surface of the growth substrate and comprising an n-de-conducting layer, a main germanium and a p-type semiconductor layer, wherein the active layer and the p-type semiconductor layer It can be formed on the surface of the n-type semiconductor layer. The upper surface of the led wafer may include a surface of the p-type semiconductor layer. The active layer and other remaining regions of the p-type semiconductor layer are not formed in the surface of the n-type semiconductor layer. The upper surface of the LED wafer can be the other surface of the growth substrate. The LED package may further include: an electrode electrode formed on the surface of the (10) wafer, wherein a wavelength conversion covering the electrode electrode may be formed, the package may further include: electrically connecting the electrode electrode to the package substrate wire. The wavelength conversion layer can extend to the side of the led wafer. A plurality of LED wafers and a plurality of wavelength converting layers may be formed, and each of the plurality of wavelength converting layers may be formed on an upper surface of the plurality of (four) wafers. A lighting device including the foregoing LED packages may be provided. A - a method of manufacturing an LED article, comprising the steps of: mounting an LED {on a package substrate; and coating a mixture comprising a transparent resin, a camping powder, and a solvent on an upper surface of the LED chip, wherein The wavelength conversion layer is formed to not exceed a region of the upper surface of the wafer and includes a surface parallel to the upper surface of the LED wafer after the solvent is removed from the mixture in the process of coating the apparatus The flat surface and the curved surface connecting the flat surface and the corner of the upper surface of the "Hail LED" are 95182 7 201201355. The upper surface is defined from the top when the LED wafer is formed on the surface. The solvent can be made of a volatile material. The method may further comprise the step of heating the mixture applied to the upper surface of the LED wafer in the coating process of the mixture thereby evaporating the solvent. The coating of the mixture can be accomplished with a dispenser (diSpenser). Coating of the mixture may include continuously coating the mixture to maintain the mixture continuously applied to the upper surface of the LED wafer by the dispenser. The coating of the mixture can be carried out while the dispenser is moving in a spiral or zigzag manner over the upper surface of the LED wafer. The method may further comprise the step of forming a light reflecting layer on the substrate to coat the side of the LED wafer after coating of the mixture. The light reflecting layer may be made of a material comprising titanium dioxide. The method may further comprise the step of forming a light distribution layer and a light distribution layer of the light reflecting layer after the light reflecting layer is formed. The light distribution layer may be made of a material containing cerium oxide. The 曰•t can include the following steps: forming a dam on the cymbal H substrate on which the light reflecting layer is formed to define an empty (four) to accommodate the LED ruthenium, the light reflecting layer, and the light distributing layer In it. The step package is formed on the edge of the package substrate, and the method can be carried out as follows: 3. After the light distribution layer is formed, the substrate substrate (4) is entangled on the dam body. Dividing body and name 95182 8 201201355 The dam can be made of a resin-containing material. The formation of the dam can be accomplished with a dispenser. The method can further comprise the step of forming a transparent cover layer overlying the LED wafer after coating of the mixture. The package substrate can be made of a ceramic-containing material. The weight ratio of the phosphor powder to the transparent resin may be equal to 2:1 or more. The LED chip may include: a structural support layer made of a conductive material; and a light emitting structure formed on a surface of the structural support layer and including a P-type semiconductor layer, an active layer, and an n-type semiconductor layer. The light emitting structure may be formed on a portion of the surface of the structural support layer, and the upper surface of the LED chip may include a surface of the light emitting structure and other remaining regions of the surface of the structural support layer where the light emitting structure is not formed. The LED chip may include: a growth substrate; and a light emitting structure formed on a surface of the growth substrate and including an n-type semiconductor layer, an active layer, and a p-type semiconductor layer, wherein the active layer and the p-type A semiconductor layer may be formed on a portion of the surface of the n-type semiconductor layer. The upper surface of the LED chip may include a surface of the p-type semiconductor layer such that the active layer and other remaining regions of the p-type semiconductor layer are not formed in the surface of the n-type semiconductor layer. The upper surface of the LED wafer can be another surface of the growth substrate. An electrode pad may be formed on the upper surface of the LED wafer, and coating of the mixture may be performed to cover the electrode pad. 9 95182 201201355 The method may further comprise the step of electrically connecting the electrode pad to the package substrate between the mounting of the LED wafer and the coating of the mixture. The mixture was applied to the upper and side faces of the led wafer at the time of coating of the mixture. A plurality of LED wafers can be formed, and the coating can be applied to the upper surface of the plurality of LED wafers at the time of coating of the mixture. [Embodiment] At this time, an exemplary embodiment of the present invention will be described in detail with reference to the accompanying drawings. However, the invention may be embodied in many different forms and should not be construed as being limited to the specific embodiments. Rather, the <RTI ID=0.0>> </ RTI> </ RTI> <RTIgt; </ RTI> <RTIgt; </ RTI> <RTIgt; </ RTI> <RTIgt; In the drawings, the shapes and dimensions are exaggerated for clarity of description, and the same or similar components are denoted by the same reference numerals. 1 is a cross-sectional view illustrating a light emitting diode (LED) package in accordance with an exemplary embodiment of the present invention. According to an exemplary embodiment of the present invention, as shown in FIG. 1, the LED package 1A includes a package substrate 110, is mounted on the package substrate 110 by an adhesive layer 114, and is electrically connected to the package substrate by wires 130. The LED chip 120' of the HQ is formed only on the wavelength conversion layer 140 on the upper surface of the LED chip 120, filled into the light reflection layer 15A surrounding the LED chip 12, and covers the LED wafer 120 and the light reflection layer. The 15 光 light distribution layer is 16 〇. Here, the upper surface of the LED chip 120 element refers to a plane formed by the LED wafer 120 when the LED chip 120 is viewed from above. When viewed from above, 95182 10 201201355 in forming the upper surface of the LED wafer 120 component, it can be formed to include regions each having a different height or made of a different material. For example, referring to FIG. 5, an upper surface of one of the LED chips 120 may be formed of a p-type semiconductor layer 124, an n-type 'semiconductor layer 126, and an intermediate light-emitting structure 123. Terms such as 'upper surface, 'lower surface' and 'side' are used in the present disclosure based on the drawings, and in fact the orientation of the elements may be different. According to the exemplary embodiment of the present invention, unlike the LED package of the prior art, the resin component containing the phosphor powder is molded on the periphery and the upper surface of the LED, and only the wavelength conversion layer 140 is formed on the upper surface of the LED wafer 120. Minimizing the phenomenon that light is absorbed by the surrounding structure due to reflection and diffusion of the resin member 'improves the luminous efficiency of the LED package and reduces the total area of light', thereby increasing the possibility of using various lighting devices requiring low etendue Sex. Further, the wavelength conversion layer 140 is formed on the upper surface of the LED wafer 120 such that it has a flat surface 146 parallel to the upper surface, except for the portion near the corner of the upper surface of the wafer 120, thereby being formed by the LED wafer 12 The resulting light has a uniform color temperature on the upper surface of the LED wafer 120, significantly reducing the color shade (e.g., color contamination or stain) within the resulting light. In addition, after the LED chip 12 is divided into individual LED chips 12, considering the characteristics of each LED wafer 12G, a wavelength conversion layer 140 having an appropriate thickness can be formed, thereby also effectively reducing the number of products that may be generated in each (10) package 100. The color temperature changes between. At this time, in accordance with this exemplary embodiment of the present invention, the configuration of the LED package 1A will be described in detail with reference to the first to sixth figures. 95182 11 201201355 As shown in FIG. 1, the circuit pattern 112 is formed on the package substrate 11A, and the LED chip 120 is mounted on the circuit pattern 112, and the electrode pad 121 of the LED chip 12 is electrically bonded by wire bonding. Electrically connected to the circuit pattern 112. Herein, in order to improve its heat dissipation performance and luminous efficiency, the package substrate 110 can be made of ceramic materials, for example, such as A12〇3, oxidized, high heat resistance, excellent thermal conductivity, high reflection efficiency, and the like. Material. However, the material of the package substrate 110 is not limited thereto, and the package substrate 110 may be formed of various materials in consideration of the heat dissipation performance, electrical connection, and the like of the LED package 100. Further, a printed circuit board, a lead frame, and the like can be used as the package substrate 110 of the present exemplary embodiment in addition to the aforementioned ceramic substrate. As shown in Fig. 1, the LED wafer 120 is mounted on a package substrate. That is, the LED wafer 120 is attached to the package substrate HQ by the adhesive layer 114, and the electrode 121 formed on the LED wafer 120 can be electrically connected to the circuit pattern 112 of the package substrate 110 by the wires 13A. Here, the 'LED wafer 120 can have various structures, such as vertical or horizontal structures, and the LED wafer 120 can be electrically connected to the package substrate 110 in various ways, such as wire bonding, flip chip bonding (flip-chipb〇nding^ or the like). The specific structure of the LED wafer 120 will be described in more detail below with reference to Figures 4 through 6. The adhesive layer 114 may be made of a conductive material or a non-conductive material according to the structure of the LED wafer 120, and reference is made to Figure 4 The material of the adhesive layer 114 is also described in Fig. 6. 95182 12 201201355 The schematic view of Fig. 2 illustrates a wavelength conversion layer ι4 of the LED package 1 根据 according to an exemplary embodiment of the present invention. The LED package 1 can emit white light when the wavelength of one of the light generated by the LED chip 120 is converted, and when the wavelength converted light is mixed with other wavelengths that are not converted. For example, when the LED chip 120 When blue light is emitted, the wavelength conversion layer 140 containing the yellow phosphor powder 144 can be used to generate white light, and when the LED wafer 120 emits ultraviolet light, the red, green, and blue phosphor powders 144 are mixed. The wavelength conversion layer 140 can be used to form white light. Further, various types of LED chips 120 and various types of phosphor powder 144 can be combined in a variable manner to produce white light. As shown in Figures 1 and 2, the wavelength conversion layer 140 Only formed on the upper surface of the LED wafer cassette 20, and the surface of the wavelength conversion layer ho may include a flat surface 146 parallel to the upper surface and a curved surface 148 connecting the flat surface 146 and the upper surface corner. That is, as shown in FIG. 1 and As shown in FIG. 2, the wavelength conversion layer 14 is formed so as not to extend beyond the upper surface of the LED wafer 120, and the wavelength conversion layer 140 is formed to have a flat surface 146 parallel to the upper surface of the LED wafer 120 and formed as an LED. The area near the upper corner of the wafer 120 has a curved surface Mg connecting the flat surface 146 and the upper surface of the LED wafer 120. Here, as described above, the upper surface of the LED wafer 120 is provided as a light allowing the LED wafer 120 to pass through it. The light emitting surface of the path of the emission is according to the structure of the LED wafer 120, which may be a single-surface having the same high level, or may include a plurality of tables viewed from above as a surface. 1201355 However, the plurality of surfaces have a stepped relationship with each other. The structure of the LED wafer 120 will be described below with reference to Figs. 4 to 6. The flat surface 146 of the wavelength conversion layer 140 may mean a case where there is an inevitable difference in height in the process. Rather than being in fact parallel with the upper surface of the LED wafer 120. For example, the height of the flat surface 146 of the wavelength conversion layer 140 may vary between about -10% and +10% of the average value. In the cross-sectional view, the width of the central region forming the flat surface 146 in the wavelength conversion layer 140 may be a distance between two points corresponding to a respective length of the corner from the center to the upper surface of the upper surface of the LED wafer 120 by about 70%, and the flat surface of the wavelength conversion layer 140. The width of 146 may vary depending on the process conditions used to form the wavelength conversion layer 140, such as the physical properties of the material, the viscosity of the mixture, or the heating temperature of the mixture. As shown in FIG. 2, the wavelength conversion layer 14 can be made of a material containing the transparent resin 142 and the phosphor powder 144, and the thickness of the wavelength conversion layer 14A formed on the central portion of the upper surface of the LED wafer 120 can be set to For example, in the range of 3 〇 to 150 μm. The light converted by the wavelength conversion layer 140 is mixed with the light emitted by the LED wafer 120 to allow for the LED package! The white light is emitted. For example, when blue light is emitted from the LED wafer 120, yellow phosphor powder can be used, and when ultraviolet light is emitted from the LED wafer 120, mixed red, green, and blue phosphors can be used. Further, the color of the phosphor powder and the LED wafer 120 may be combined in a variable manner to emit white light. In addition, wavelength conversion materials (e.g., green, red, and the like) can be applied to a light source that emits a corresponding color without white light. 95182 201201355 Ocean, when the blue light is emitted by the LED chip 120, the red fluorescent powder used in Yizhong may contain MAlSiNx: Re (Uu5) nitride fluorescent powder, rib: Re sulfide fluorescent powder, and the like Things. Here, the M system is selected from at least one of the following elements: Ba, Sr, Ca, and Mg, and D is selected from at least one of the following elements: S, Se, and Te, and the Re is selected from at least the following elements. 1. Eu, Y, La, Ce, Nd, Pm, Sm, Gd, Tb, Dy, Ho, Er,

Tm, Yb, Lu, F, Cl, Br, and I. In addition, the green fluorescent powder used therein may include ISiO4: Rephthalate phosphor powder, MAzD4: Resulfide phosphor powder '/5-SiAlON: Re phosphor powder, and MA, 2〇4 : Re, Oxide-based phosphor powder, and the like. Here, M may be selected from at least one of the following elements: Ba, Sr, Ca, and Mg, and A may be selected from at least one of the following elements: Ga, Al, and In, and D may be selected from the following elements. At least one of: S'Se, and Te' A' may be selected from at least one of the following elements: sc, γ, Gd, La, Lu, A, and In 'Re may be selected from at least one of the following elements: :

Eu, Y, La, Ce, Nd, Pm, Sm, Gd, Tb, Dy, Ho, Er, Tm,

Yb, Lu, F, Cl, Br, and I' and Re' may be selected from at least one of the following elements: Ce, Nd, Pm, Sm, Tb, Dy, Ho, Er, Tm, Yb, F, Cl , Br, and I. The wavelength conversion layer 140 may include a quantum dot in place of the phosphor powder or the addition of the phosphor powder. Quantum dots are nanocrystalline particles with a core and a shell, and their cores can range in size from 2 nm to 1 nm. The quantum dots can be used as phosphors emitting various colors, such as blue (B), yellow (Y), green (G), and red (R), and in hetero-junction semiconductors. At least two types: π_νι grouping 95182 15 201201355 Compound semiconductors (ZnS, ZnSe, ZnTe, CdS, CdSe, CdTe, HgS, HgSe, HgTe, MgTe, etc.), III-V compound semiconductors (GaN,

GaP, GaAs, GaSb, InN, InP, InAs, InSb, AlAs, A1P,

AlSb, AlS, etc.), or Group IV semiconductors (Ge, Si, Pb, etc.) to form a core-shell structure constituting quantum dots. In this case, in order to terminate the binding of the molecules to the shell surface at the outer edge of the quantum dot shell, the aggregation of the quantum dots is suppressed, and the dispersion characteristics of the resin (for example, ruthenium resin, epoxy resin or the like) are improved, or the firefly is improved. The toner function can form an organic ligand using a material such as oleic acid. Quantum dots are susceptible to moisture or air, and in particular, chemical reactions occur when it contacts the plate-like pattern of the substrate or the lead frame of the package. Therefore, the wavelength conversion layer 14 is coated only on the upper surface of the LED wafer 120, and the possibility of contact with the plate pattern or the lead frame is eliminated, thereby improving the reliability thereof. Therefore, although the phosphor powder is used as an example to illustrate the wavelength conversion. The material 'however, the phosphor powder can be exchanged for quantum dots or quantum dots added to the phosphor powder. The weight ratio of the phosphor powder 144 to the transparent resin 142 may be equal to 2:1 or more. Therefore, as shown in Fig. 2, the transparent resin 142 is used to bond the phosphor powder 144 particles' and the transparent resin 142 can be made of, for example, tantalum, epoxy resin, or a material obtained by mixing tantalum and epoxy resin. The ratio of the phosphor powder 144 is very south compared to the ratio of the prior art phosphor powder to the transparent resin of only 1/10 or 1. Therefore, with such a high ratio, the mixture of the phosphor powder 144 and the transparent resin 142 can increase the viscosity and reduce the fluidity on the upper surface of the LED wafer 120. Therefore, it is possible to prevent the surface transition layer from being affected by the low viscosity of the phosphor powder and the transparent resin, and the entire surface is formed, and can be formed on the LED wafer 120. thickness. A more detailed description of the manufacturing method of the package 2A will be explained below with reference to Figs. 18 to 35. According to the exemplary embodiment, the prior art LED package molded with the phosphor powder and the upper surface of the LED is formed on the upper surface of the LED chip 12, since only the wavelength conversion layer 14 is formed. The light absorbed by the surrounding structure is improved to improve the luminous efficiency of the LED package 1 ′′. Further, since the package body “which is used for molding the phosphor as in the prior art” is not required, the size of the LED package 1 显 can be remarkably reduced. Further, the substantial light-emitting area is limited to the upper surface of the LED wafer 120, which is the number of light per unit area of the light source. Therefore, the LED package 1 can be used more actively in various lighting apparatuses requiring a low etendue. Further, since the wavelength conversion layer 14 has a flat surface 146 parallel to the upper surface of the LED wafer 120, the LED package 1 〇〇 can uniformly emit light. That is, the wavelength conversion layer 14 is formed to have a uniform thickness, and only includes the corner portion of the upper surface of the Ud wafer 120 to have a uniform optical path, whereby the light generated by the LED chip 12 has a uniform color temperature. While the light changes its wavelength as it passes through the wavelength conversion layer 140. Figure 3 is a graph showing the color temperature characteristics of the LED package 100 in accordance with an exemplary embodiment of the present invention. The foregoing effects will be detailed in Figure 3. The graph of Fig. 3 illustrates the comparison of the color temperature characteristics (A) of the LED package 1 辐射 with respect to the radiation angle and the color temperature characteristic (B) of the prior art LED package for the radiation angle. The resin is on the entire interior of the body of the agricultural product. 95182 201201355 As shown in Fig. 3, in the case of the prior art (B), _ produces a maximum color temperature change of the dish, resulting in a serious, contrasting angle, in the case of the case: The specific embodiment 'radiation angle is only a maximum of half the color of the prior art, resulting in uniform illumination and branching, while at the same time 'wavelength conversion layer 14. It may further comprise transparent fine particles of = and transparent resin 142 together. Transparent % Nine Volume 144 Material such as sulphur dioxide, titanium dioxide, Al 2 〇 3 or the like =: By this way, by appropriately adjusting the ratio of the transparent fine particles contained in the wavelength of 140, the light can be emitted to The external color temperature is set to such an extent that, in this case, for example, the weight ratio of the transparent fine particles to the phosphor powder 144 may be equal to 1:2 or less. As shown in Fig. 1, a light reflecting layer 150 is formed on the package substrate 11 () to surround the side of the LED wafer 120. For example, a reflection containing reflected incident light is filled around the LED wafer 120 by a dispensing or molding operation. A material of a material such as 'titanium dioxide or the like may form the light reflecting layer. In this case, 'the light reflecting layer 15 as shown in FIG. 1' may be formed to have a corresponding formation on the LED wafer 120. The height 'the height of the height of the wavelength conversion layer 140 on the surface is such that the light reflection layer 150 does not cover the wavelength conversion layer 140. Therefore, since the light reflection layer 150 surrounding the LED wafer 120 is formed, the light is reflected after being incident on the light distribution layer 160. The light is not emitted outside but can be reflected again to the light distribution layer 160 to be emitted toward the outside' resulting in improved brightness of the LED package 100. 18 95182 201201355 The light reflecting layer 150 can be formed on a dam formed on the package substrate 11 Inside the cavity 172 defined by the body (170 of Fig. 9), after forming the light reflecting layer 15 and the light distributing layer (which will be described), in the process of cutting the LED package 1 into a unit LED package , moveable Except for the dam body (17〇 of Fig. 9). The carcass (170 of Fig. 9) may be made of a resin or a cushioning material. Therefore, as described above, although the package substrate 110 made of a ceramic material is heated during the process and In the cooling operation, it expands or contracts. Since the dam can be deformed to correspond to the degree of expansion and contraction, it is possible to effectively prevent the package substrate 110 from being bent or the like and the alumina having excellent thermal resistance (therraa丨resi stance). It can be used as a material of the package substrate 110. (j The following describes the formation and removal of the m in detail when the manufacturing method of the LED package 200 is explained with reference to Figs. 18 to 35. As shown in Fig. 1 The light distribution layer 60 covering the light reflection layer 15G and the wavelength conversion layer 1 not covered by the light reflection layer (10) may be coated by a dispensing operation to apply a dispersant containing dispersed human light (for example, silica dioxide or its substance). The material may be formed on the light reflecting layer 15 and the wavelength converting layer to form the light distributing layer 160. The light reflecting layer 15G (4) may be formed in the cavity 2 defined by the front body (7), and the sealing material (10) may be cut into a unit seal. It can be removed. Due to the light distribution layer (10) Formed to cover the light reflecting layer 15 and the wave=conversion layer 14〇, the light generated by the LED chip can be dispersed to radiate to the outside and this can improve the uniformity of the light of the LED seal (4) 100. Figure 6 depicts (10) wafer 12{) applicable to various structures of the present exemplary embodiment of 95182 19 201201355. Sections 4 through 6 are cross-sectional views of LEDs illustrating LED packages in accordance with an embodiment of the present invention. First, referring to Fig. 4, an LED chip 120 having a vertical structure is proposed. The LED chip 120 may include a structural support layer 122 and a light emitting structure 123 formed on the structural support layer 122, and the light emitting structure 123 may include a p-type semiconductor. Layer 124, active layer 125, and n-type semiconductor layer 126. As shown in FIG. 4, the structural support layer 122 is used to support the structure of the light-emitting structure 123, and since it is bonded to the package substrate 11's circuit pattern by the conductive adhesive layer 114 (112 of FIG. 1), it can also be used. As an electrical connection between the package substrate and the LED wafer 120. Thus the 'structural support layer 12 2 is made of a conductive material selected from the group consisting of Au, Ni, Al, Cu, W, Si, Se, GaAs or a combination of two or more thereof, and the adhesive layer 114 is electrically conductive Made of solder, paste or the like. As shown in FIG. 4, the p-type semiconductor layer 124, the active layer 125, and the n-type semiconductor layer 126 of the light-emitting structure 123 are sequentially formed on the structure supporting layer 122 in this order, and are made of a compound semiconductor such as GaAs or AlGaAs. , GaN, InGalnP or the like to generate light. As shown in Fig. 4, an electrode pad 12, which serves as an n-type electrode, is formed on the n-type semiconductor layer 126 and is connected to the circuit pattern 112 of the cracked substrate 11A by the electric wires 130. As shown in Fig. 4, the light-emitting structure 123 may be formed on one surface of the structural support layer 122 95182 20 201201355 * except for the corner portion of the surface. The light-emitting structure 123 having this configuration can be obtained by a process for singulating the LED chips 120 to separate the individual unit LED chips. In this case, the surface defining the upper surface of the LED wafer 120 may be a surface of the light-emitting structure 123, that is, the upper surface of the n-type semiconductor layer 126, and the corner portion of the surface of the structural support layer 122 where the light-emitting structure 123 is not formed. Part of the area. Therefore, as shown in Fig. 4, the wavelength conversion layer 14 can be formed on the upper surface of the surface of the n-type semiconductor layer 126 and the surface of the structural support layer 122, both of which are only on the upper surface of the LED wafer 120. As described above, the central portion is configured as the flat surface 146, and the corner portion is configured as the curved surface 148. Even in this case, the wavelength conversion layer 140 is formed so as not to exceed the corner portion of one surface of the structural support layer 122. The wavelength conversion layer 140 is formed in a state in which the LED wafer 120 is mounted and the electrode electrode 121 and the circuit pattern 112 have been wire bonded. Therefore, as shown in FIG. 4, a part of the wire 130, that is, as the electrode pad 121, is coupled. The portion of the joint portion 'and the electrode pad 121 are buried in the wavelength conversion layer 140. Subsequently, as shown in Fig. 5, an LED wafer 120 having a horizontal structure is proposed. The LED wafer 120 shown in Fig. 5 may include a growth substrate 127 and a light-emitting structure 123 formed on the growth substrate 127. The light emitting structure 123 may include an n-type semiconductor layer 126, an active layer 125, and a P-type semiconductor layer 124. A sapphire substrate or the like can be used as the growth substrate 127' and the light-emitting structure 123 including the n-type semiconductor layer 126, the active layer 125, and the p-type semiconductor layer 21 95182 201201355 124 can be grown on the growth substrate 127. The layer U4 can be bonded to the substrate 110 by growing the substrate 127 edge body '(10). As shown in Fig. 5, the active layer 125 and the p-type semiconductor layer 124 may be formed on a portion of the surface of the n-type semiconductor layer 126. The formation of the structure can be performed by growing the active layer 125 and the p-type semiconductor layer 124 on the n-type semiconductor layer 126, and then the mesa_etch portion of the active layer 125 and the p-type semiconductor layer 124. Figure 5 is a diagrammatic representation of the stepped silver engraving active | 125 and the step formed by the p-type semiconductor 124 in an exaggerated manner. This step is actually small for the thickness of the grown substrate 127. As shown in Fig. 5, electrode pads 121 each serving as an n-type electrode and a 卩-type electrode are formed on the n-type semiconductor layer 126 and the {]-type semiconductor layer 124. With the electric wires 130, the electrode pads 121 can be electrically connected to the circuit patterns 112 of the package substrate 11A (Fig. 1). As shown in FIG. 5, the LED wafer 12 can be defined by the mesa after etching of the upper surface of the p-type semiconductor layer 124 and the surface of the n-type semiconductor layer 126 without the active layer 126 and the remaining regions of the germanium-type semiconductor layer 124. The upper surface of the crucible. Therefore, as shown in FIG. 5, the wavelength conversion layer 140 may be formed on the upper surface of the p-type semiconductor layer 124 and exposed in the n-type semiconductor layer 126 by mesa etching the active layer 125 and the p-type semiconductor layer .124. The upper surface of the p-type semiconductor layer 124 and the portion of the n-type semiconductor layer 126 are [£1) the upper surface of the wafer 120. As described above, the central portion of the wavelength conversion layer 14A is formed as a flat surface 146 via 22 95182 201201355 and its corner region is formed as a curved surface 148. Further, even in this case, the wavelength conversion layer 140 is formed not to exceed the corner of the n-type semiconductor layer 126. Like the LED chip 120 having a vertical structure, the wavelength conversion layer ho is formed in a state in which the LED chip 120 is mounted and the electrode pad 121 and the circuit pattern 112 are already wire bonded, and thus, as shown in FIG. 4, the electrode 塾121 and A portion of the wire 130 is buried in the wavelength conversion layer 140. Referring to Fig. 6, there is provided an LED chip 12A mounted on a substrate 110 in accordance with a fHp_chip method. As shown in Fig. 6, the LED wafer 120 may include a growth substrate 17 and a light-emitting structure 123 formed under the growth substrate 127. The light emitting structure may include an n-type semiconductor layer 126, an active layer 125, and a p-type semiconductor layer 124 from top to bottom. The LED chip 12 shown in Fig. 6 has a basic structure similar to that of the LED wafer 120 having a horizontal structure in Fig. 5. In this case, [Ερ wafer 120 is electrically connected to the package substrate 11 according to the flip chip method. 〇 (Fig. 1), instead of wire bonding. That is, as shown in FIG. 6, the electrode pads 119 formed on the n-type semiconductor layer Kg and the p-type semiconductor layer 124 are actually bonded to the package by the conductive adhesive layer U4 (for example, a tin bump or the like). The circuit pattern 112 (Fig. 1) of the substrate 丨1〇 (Fig. 1) is electrically connected. In this case, as shown in Fig. 6, the upper surface of the LED wafer 12A can be defined as the upper surface of the growth substrate 127. Therefore, as shown in FIG. 6, the wavelength conversion layer 14 can be formed on the upper surface of the growth substrate 95182 23 201201355 substrate 127, on the upper surface of the LED wafer 120, and as described above, the central region of the wavelength conversion layer 140 is formed as The flat surface 146, as well as its corner region, is formed as a curved surface 148. In this case, the wavelength conversion layer 丄4〇 is formed so as not to exceed the corner of the growth substrate 127. The LED package 100 will be described in accordance with another illustrative embodiment of the present invention with reference to Figures 7 through 9. Sections 7 through 9 illustrate an embodiment of an LED 100 package in accordance with an illustrative embodiment of the present invention. When the embodiment of the LED 1 〇〇 package is described in accordance with an exemplary embodiment of the present invention, the same or similar configuration descriptions as above and the different configurations are described. Referring to FIG. 7, in accordance with an exemplary embodiment of the present invention, the lED package 100 is configured to form a cavity 172 on the package substrate 11 and the cavity 172 houses the LED wafer 120, the light reflective layer 150, and the light. Distribution layer 160. Referring to the LED package 1A shown in FIG. 1, a light reflection layer 丨5〇 and a light distribution layer 160 are formed in the cavity 172 defined by the dam body (0 (Fig. 9), and the LED package is packaged. The dicing process of the unit package is separated into a dicing process to remove the dam 170. In contrast, as shown in FIG. 7, the cavity 172 may be formed on the package substrate 110 itself to form the light reflecting layer 150 and the light distributing layer 160 therein, and the final product of the LED package 1〇〇 is left empty. Cavity 172. Referring to FIG. 8 'in accordance with an exemplary embodiment of the present invention, the LED package 100 is configured such that the package substrate U0 includes a first substrate 116 and a 24 95182 201201355 two substrate 118, and a cavity 172 is formed in the second The substrate 118 is disposed to accommodate the LED wafer 120, the light reflecting layer 150, and the light distributing layer 16 therein. Unlike the LED package 1 shown in FIG. 1 , in the LED package 100 illustrated in FIG. 8 , the second substrate 118 having the cavity 2 is stacked on the first substrate 116 . Thereby, it is ensured that there is space for mounting the LED chip 12'' and forming the light reflecting layer 150 and the light distributing layer 160. The first and second substrates 116 and 118 may be made of a ceramic material such as AhCb, alumina, or the like, which has characteristics such as high thermal resistance, excellent thermal conductivity, high reflection efficiency, and the like. Referring to FIG. 9 'in accordance with an exemplary embodiment of the present invention, the LED package 100 is configured to define a dam 170 of the cavity 172 formed on the package substrate 110' and to the LED wafer 120, the light reflective layer 150, and the light The distribution layer 160 is received in the cavity 172. As in the LED package 1A illustrated in FIG. 1, in the LED package 1 according to the present exemplary embodiment, a dam body 17 made of a resin is formed on the substrate to define an empty space. The cavity 172 is provided with the LED chip 120 and the light reflecting layer 150 and the light distributing layer 160. However, the LED package 100 shown in FIG. 9 is different from the LED package 1 of FIG. 1 in that the dam 170 remains. In the final product. The dam body 170 may be made of a resin or a cushioning material as described above with reference to the Led package 1A shown in Fig. 1. Therefore, although the package substrate 110 made of a ceramic material during the fabrication of the LED package 1〇〇 or during the operation of the LED package 1〇〇 may expand or contract during heating and cooling operations, due to the % body 170 It can be deformed to correspond to the degree of expansion and contraction, and thus can effectively 95182 25 201201355 to prevent the phenomenon of the base material 110 from being bent or the like, and the alumina having excellent resistance can be used as the material of the package substrate 110. At the same time, the LED package 100 of FIGS. 7 to 9 is illustrated using the LED wafer 120 having the 4th vertical structure. However, the present invention is not limited thereto, and the LED chips shown in FIGS. 5 and 6 are shown. 12G and LED chips with any other substrate can also be applied to LED packages. Other embodiments of the LED package 10{) will be described below with reference to Figs. 10 through 13 in accordance with an exemplary embodiment of the present invention. Fig. 10 is a cross-sectional view showing another exemplary embodiment of the present invention. Fig. 5 is a plan view showing a non-light emitting diode (LED) package, and Fig. 5 is a first view of the LED package. When the embodiment of the LED package 100 is described in accordance with an exemplary embodiment of the present invention, the same or similar configuration descriptions as above and the different configurations are described. As shown in Fig. 10, the plurality of LED wafers 120 are disposed apart from each other. Therefore, unlike the LED wafer 120 of Fig. 1, a plurality of wavelength conversion layers 140 are formed on the upper surface of each of the LED wafers 120. In the exemplary embodiment, as shown in Fig. 1, the light reflecting layer 150 may be filled in a space surrounding each side of the LED wafer 120 and between the LED wafers 120.

According to the present exemplary embodiment, the light reflecting layer 150 is filled in the space between the LED wafers 120, and the light distributing layer 160 is formed on the LED wafer 120 and the light reflecting layer 150, whereby the space between the LED chips 120 can be improved. Luminous intensity results in an overall uniform photometric distribution of LED packages loo that are loaded with multiple LEDs 26 95182 201201355 * wafer 120. 'That is, in the case of molding a prior art LED package containing a resin component of phosphor powder in a package body, there is a dark portion in the space 1 between the LED chips, but this exemplary embodiment, As shown in FIG. 10, 'the wavelength conversion layer 140 is uniformly formed on the upper surface of the diode wafer 120, and the light reflection layer 150 is formed in the space between the LED wafers 120, and the light distribution layer 160 is formed in the wavelength conversion. The layer 140 and the light reflecting layer, 150, 'by this, the luminosity of the space between the LED chips 120 can be improved to form a photometric distribution of the uniform sentence. In more detail, the light distribution layer 160 uniformly spreads the light emitted by the LED wafer 120 and the light reflecting layer 150 reflects the light reflected by the light distributing layer 160 to the outside, whereby the space between the LED chips 120 can be remarkably improved ( Corresponds to the luminosity of the dark portion of prior art LED packages.

The graph of Fig. 12 illustrates the two-dimensional luminosity distribution of the LED package 100 depicted along the line χ_χ in Fig. 11. Figure 12 is a view showing the photometric distribution (c) of the LED package 1 of the exemplary embodiment and the prior art LED package in which the resin containing the phosphor is molded over the entire interior of the package body. The luminosity distribution (D) is for comparison. As shown in Fig. 12, compared with the prior art (d), the luminosity of the space between the LED chips 120 of the led package (c) (corresponding to the dark area) is increased, and in detail, the luminosity difference (G) There are about 45 light absorption intensities (au) or more. Therefore, since the LED package 100 according to the present exemplary embodiment minimizes the dark portion of the region formed between the plurality of LED wafers 120, the total luminance of the LED package 100 is uniformly distributed. 95182 27 201201355 Furthermore, according to the exemplary embodiment, the specific thickness is formed to have an appropriate thickness to take into account the individual characteristics of the respective long-f-type layer-forming sheets, so that the LED crystals of each of the sheets can be effectively eliminated. Color temperature changes between products. The package 100, that is, before the wafer-level phosphor film is formed into a unit wafer, is formed into a flashlight first: it is said that the phosphor film of the same:: degree is not considered or considered for each wafer two: In the case of 2 cases of temple coating, as described above, the wavelength conversion layer (10) can be subjected to different thicknesses, thereby effectively reducing the yield of each piece. The color temperature changes between the mouths. The graph of Fig. 13 illustrates the color scattering of the LED package of Fig. 10. The effect of reducing the color temperature change between the aforementioned products will be described again below. In particular, the CIE color coordinate system graph of Fig. 13 illustrates the color temperature distribution (8) of the LED package 1GG product and the color temperature distribution of the (4) package product containing the phosphor powder_fat component in the package body according to the prior art (7) 'When the power of the LED chip on the farm is between 39 〇m and 410 mW, the 'central wavelength distribution is between 445 nm and 450 nm' and the driving current of the LED chip 120 is 75 〇. mAh. As shown in Fig. 13, in the case (8) of the LED package 1 according to the present exemplary embodiment, the color scattering between the products is about ι?6κ, which is equal to or less than about 40%. Thus, in the case of the LED package package (10) according to the present exemplary embodiment, as described above, the wavelength conversion layer can be precisely adjusted individually for each LED wafer 120' when forming a wavelength change 95182 28 201201355. The thick thickness of 140 can significantly reduce the color temperature variation between the individual (10) packages. • Other embodiments of the LED package 100 are described in accordance with illustrative and physical embodiments of the present invention with reference to Figures 14 through 17. The cross-sectional views of Figures 14 through 16 illustrate different LED package embodiments in accordance with an illustrative embodiment of the present invention. FIG. 17 is a schematic diagram showing different LED packages according to an exemplary embodiment of the present invention. Embodiment 0 When an embodiment of the LED package 1 is described in accordance with an exemplary embodiment of the present invention, the above is omitted. Same or similar configuration instructions and describe different configurations. First, referring to Fig. 14, the LED package 1 is configured such that a plurality of LED chips 12 are mounted on a package substrate ιι with a cavity 172 and a transparent cover 180 covers the cavity 172. Unlike the LED package of FIG. 10, in the exemplary embodiment as shown in FIG. 14, the cavity 172 is formed on the package substrate 11 itself and the transparent cover layer 18 (for example, a lens, a glass layer). And the like) can be deposited on the package substrate 110 to cover the LED wafer 12A. Further, in the present exemplary embodiment, as shown in FIG. 14, the light distribution layer 160 (the first drawing) and the light reflecting layer 15 (the first drawing) are omitted, and the horizontal structure of the fifth drawing is omitted. A plurality of UD wafers 120 can be mounted on package substrate 110. Referring to Fig. 15, the LED package 1 is configured as a dam body 17 〇 forming 29 95182 201201355 on the package substrate 110, a plurality of LED wafers 120 are mounted in the cavity 172 defined by the dam body 17〇, and formed The light reflecting layer 15 is separated from the light distributing layer 16A. Unlike the LED package 100 of Fig. 10, in the present embodiment as shown in Fig. 15, the dam 170 made of resin remains on the final product of the rib rib package 100. Further, in the present exemplary embodiment as shown in Fig. 15, the plurality of LED chips 120 illustrated in Fig. 6 may be flip-chip mounted on the package substrate 110. Referring to Fig. 16, the LED package 丨00 is formed into a plurality of LED chips 120 mounted on the package substrate no. Unlike the LED package 100 of FIG. 10, in the embodiment of the present embodiment as shown in FIG. 16, the light reflection layer 15 and the light distribution layer 16' may be formed and the image shown in FIG. A plurality of LED wafers 120 may be flip-chip mounted on the package substrate 110. Referring to FIG. 17, the LED package 1 is configured such that a plurality of led wafers 120 are mounted on the package substrate 11 having the cavity 172, and a plurality of wavelength conversion layers 140 are formed on the side of the LED chip 12A. And on the upper surface of the led wafer 120. In the exemplary embodiment as shown in Fig. 17, the wavelength conversion layer 140 may be extended to form even on the side of each of the LED wafers 120 and on the upper surface of the LED wafer 120. Therefore, a portion of the surface on which the wavelength conversion layer 14 can be formed on the side of the LED chip 120 is parallel to the side of the LED chip 丨 2 , as shown in FIG. That is, as shown in Fig. 17, a wavelength transition of a uniform thickness can be formed. 30 95182 201201355 The layer 140 is changed to be parallel to the upper surface and the side surface of the LED wafer ι2. In this case, the schematic diagram of FIG. 17 illustrates a monthly LED package 1 according to this exemplary embodiment, wherein the entire surface of the wavelength conversion layer 14 is illustrated in a slightly exaggerated manner parallel to the LED wafer. The surface of the upper surface and the side surface of the 120, but the manufacturing process of the LED package 1 will be described. The portion of the wavelength conversion layer 140 actually formed adjacent to the upper surface of the LED chip 120 and the portion of the LED wafer 120 The sides may form a curved surface (148 of Figure 1) 'as in the foregoing exemplary embodiment. According to the present exemplary embodiment, since the wavelength conversion layer 14 is formed on the side of the LED wafer 120, the LED package 1 can be constructed to have a superior structure according to the structure of the external LED chip 120. That is, in the case of the LED wafer 120 having the horizontal structure of Fig. 5, the light may be partially emitted through the side of the LED wafer 120. Therefore, it is more advantageous to form the wavelength conversion layer 14 on the side of the wafer 120. At the same time, 'the LED package 100 shown in FIGS. 14 to 17 is illustrated, and the LED wafer 120 is not limited to the illustrated structure. Instead, the LED chip 120 of FIGS. 4 to 6 has any other structure. The LED chip can also be applied in a variable manner to the LED package. The configuration and function of the LED package 1A have been described in accordance with an illustrative embodiment of the present invention. The LED package 1 can be used as a light source for various lighting devices, such as 'street lights, camera flashes, warning lights, situation lights, vehicle headlights, medical lighting bulbs, backlight units, projectors, and the like. DETAILED DESCRIPTION As described above, the L E D package 100 according to an exemplary embodiment of the present invention can produce light having a uniform color temperature without causing color blur, 95182 201201355 and reducing the area of the entire light emitting surface to have a low etendue. Therefore, the LED package 10A according to an exemplary embodiment of the present invention can be actively used as a light source of a camera flash, a vehicle headlight, a backlight unit, a projector, and the like. Referring now to Figures 18 through 35, a method for fabricating an LED package 2A will be described in accordance with an illustrative embodiment of the present invention. In the exemplary embodiment, the LED package 2, the package substrate 210, the circuit pattern 212, the adhesive layer 214, the LED wafer 220, the electrode pad 221, the structural support layer 222, the light-emitting structure 223, the wire 230, and the wavelength The conversion layer 240, the flat surface 246, the curved surface 248, the light reflecting layer 250, the light distributing layer 260, the dam body 270, and the cavity 272 are the same or similar to the leD sealing member 100, the package substrate 110, the circuit pattern 112, and the adhesive layer. Layer U4, led wafer 120, electrode pad 12, structural support layer 122, light emitting structure 123, electric wire 130, wavelength conversion layer 140, flat surface 146, curved surface 148, light reflecting layer 150, light distributing layer 160, dam body no, and The cavity 172, thus omitting the detailed description of the structure and describing the process for fabricating the LED package. The flowchart of Fig. 18 illustrates the flow of a method of fabricating the LED package 200 in accordance with an exemplary embodiment of the present invention. According to the exemplary embodiment, as shown in FIG. 18, the manufacturing method of the LED package 200 includes the step of mounting the LED chip on the package substrate 21, and the step of electrically connecting the package substrate 210 to the wafer 22 S130, the step S130 of forming the dam body 270 on the sealing substrate 21 by the distributor 294, and coating the mixture 2 with the distributor 292 on the upper surface of the led wafer 22 〇ς 95182 32 201201355 to form the wavelength conversion layer 24 〇 step s14 That is, the step S315 of forming the light reflecting layer 250 on the package substrate 210, the step S160 of forming the light distributing layer 26, and the step S170 of removing the dam 270.

According to the embodiment of the present embodiment, since the wavelength conversion layer 24 is formed to have a uniform thickness on the upper surface of the LED wafer 220, the luminous efficiency of the LED package 200 can be improved, the etendue can be reduced, and the brightness can be greatly reduced. Reduce the color blur of the light. In addition, since the wavelength conversion layer 240 can be formed to have an appropriate thickness to take into account the characteristics of the individual LED chips after the LED wafer 220 is divided into unit LED chips, the potential color temperature variation between the individual LED packages 2〇〇 can also be effectively reduced. . First, a mixture 249 is prepared by mixing a transparent resin (142 of Fig. 2), phosphor powder (144 of Fig. 2), and a solvent to form a wavelength conversion layer 240 on the upper surface of the LED wafer 220. In order to form a phosphor layer on the upper surface of the LED wafer, a mixture of a transparent resin and a phosphor powder may be applied to the LED wafer and a method of curing the resin. However, with this method, it is difficult to form a phosphor layer having a uniform thickness because the coating mixture as a whole has a convex curved surface, which is caused by the surface tension of the transparent resin having high fluidity before curing. Therefore, in this exemplary embodiment, the amount of phosphor powder (144 of FIG. 2) is relatively increased compared to the transparent resin (142 of FIG. 2) to increase the viscosity of the mixture 249 to reduce the application to the LED. The fluidity of the mixture 249 on the upper surface of the wafer 220, therefore, the wavelength conversion layer 240 having the flat surface 246 can be formed. In this case, the weight ratio of the phosphor powder (144 of Fig. 2) to the transparent 95182 33 201201355 resin (142 of Fig. 2) is 2:1 or more. In this case, however, increasing the amount of phosphor powder (144 in Fig. 2) in order to increase the viscosity may cause the dispensing process to be performed, so the solvent is added to the transparent resin (142 of Fig. 2) and the phosphor powder ( Mixture 249 of 144) of Figure 2 temporarily reduces the viscosity of mixture 249 to increase fluidity when coating mixture 249 with dispenser 292. In this manner, since the solvent is added to the mixture 249 containing the transparent resin (142 of FIG. 2) and the phosphor powder (144 of FIG. 2) to temporarily provide fluidity to the mixture 249, the upper surface of the LED wafer 220 can be The wavelength conversion layer 240 having a uniform thickness is effectively formed. The solvent is the material used to provide temporary fluidity to the mixture 249. For example, the solvent may be a volatile material that evaporates after the mixture 249 is applied to the upper surface of the LED wafer 220, and a material having a relatively low molecular weight organic solvent group (eg, polymer, monomer, ethanol, acetone, or the like). Can be used as the solvent. Further, the solvent is a material for providing a certain degree of fluidity to the mixture 249 which has been reduced in fluidity due to an increase in the amount of the fluorescent powder (144 of Fig. 2), and therefore does not require a large amount of solvent, for example, and based on weight. This solvent is mixed to a degree that is one tenth of that of the phosphor powder (144 of Fig. 2). Further, the mixture 249 may further contain transparent fine particles made of a material such as cerium oxide, titanium oxide, and ai 2 〇 3 to adjust the color temperature, and may combine the transparent fine particles to have a fluorescent powder (144 of FIG. 2) 1/2 or less by weight. Referring to FIGS. 19 to 21, an exemplary embodiment of the present invention is described in the description of the present invention. The method for manufacturing an LED package is to use a transparent resin (142 of FIG. 2) and a lacquer powder (2nd). The mixture 249 of 144) and the solvent forms a process for the wavelength conversion layer 240. The views from the Wth to the 21st views illustrate a process for forming a wavelength conversion layer in accordance with an exemplary embodiment of the present invention. First, as shown in Fig. 19, a mixture (10) and 294 containing a transparent resin (142 of Fig. 2), phosphor powder (144 of Fig. 2), and a solvent are applied to the upper surface of the LED wafer 22A. After the LED wafer 220 is wire bonded to the package substrate 21, the wafer 2 (4) package substrate 210 can be dispensed with the mixture 249, so that the electrode 221 is partially buried with the portion of the wire coffee 249. That is, the mixture 249 is configured to cover even the light emitting surface of the electrode 221 disk wafer 220, and the wire 230 may be covered with a wavelength conversion layer during this process. Meanwhile, in this exemplary and Hi example, the distribution may mean that Lin Pu applies a pressure feed head to connect the phosphor powder mixture (that is, in the state of most of the sensible $ rong powder mixture on the upper surface of the wafer). ), this does not =:= process 'where the material is granulated to make money as above's initial increase in crab light powder (Fig. 2, second class: person. Dynamic reduction J however &amp; in the distribution process) The solvent-added mixture 249 can be smoothly discharged from the distribution 292. In this case, as shown in Fig. 19, the mixture 249 can be uniformly applied by the movable distributor 292', or as in the first m 95182 35 201201355 shows that by moving the dispenser 292 in a zigzag manner, the mixture 249 can be uniformly applied. Thereafter, as shown in FIG. 20, the mixture 249 is heated by a heating device 296 to cause the solvent in the composition 249. Evaporation. As described above, the solvent can be made of a volatile material, and thus can be removed by evaporation without using the heating device 296. Therefore, only the transparent resin (142 of Fig. 2) and the phosphor powder (144 of Fig. 2) ) remaining on the upper surface of the LED wafer 220 to form a shirt The wavelength conversion layer 240. In this case, in order to prevent the wavelength conversion layer 240 from being deformed by the solvent evaporation delay due to the solvent evaporation delay, the mixture 249 containing the solvent may be heated by the heating means 296. For example, the 'LED wafer 220 can be heated in a temperature range of 50 C to 17 〇 ° C, whereby the mixture 249 can be heated and the solvent in the mixture 249 can be removed more effectively. Referring now to Figures 18 through 35, in accordance with the present invention, the process of the method of fabricating a led package is separately described. The cross-sectional views of Figures 2 through 2 are each illustrating a process for fabricating an LED package in accordance with an exemplary embodiment of the present invention. The plan views of Figs. 29 to 35 are processes according to another exemplary embodiment of the present invention, which are independent of the LED package. First, as shown in Figs. 22 to 29, a plurality of LED chips 220 are mounted on a package substrate 210 (step si 10). That is, a plurality of LED wafers 220 are mounted on the package substrate 210 having the circuit pattern 212 formed on one of the surfaces thereof, and in this case, the LED wafer 22 can be physically bonded and electrically connected to the package substrate 210 by the adhesive layer 214. Circuit pattern 212. 36 95182 201201355 , in this case, the LED chips 220 can be electrically connected in series to the circuit pattern 212 formed on the sealing substrate 210. However, the present invention is not limited thereto, and the LED chips 22A may be electrically connected to the circuit pattern 212 in parallel, or may be electrically connected to the circuit pattern 212 in series and in parallel. In the exemplary embodiment, as shown in FIGS. 22 and 29, a total of eight LED chips 220 are mounted on the package substrate 210 to form two unit packages, and then separated by a cutting process, however The present invention is not limited thereto, and the number of mounting of the LED wafer 220 and the number of cuts of the unit package can be changed as needed. As shown in Figs. 23 and 30, the electrode pad 221 is electrically connected to the package substrate 210 by a wire 230 (step S120). In the exemplary embodiment, for example, the LED wafer 220 having the vertical structure of FIG. 4 is used, and since the electrode pad 221 is formed on the upper surface of the LED wafer 220, the electrode 221 can be electrically connected to the package substrate by the wire 230. 21〇 circuit pattern 212. When the LED wafer 120 illustrated in Fig. 6 is used in the exemplary embodiment, since the electrode pad 121 is not formed on the upper surface of the LED wafer 220, the process can be omitted. Thereafter, as shown in FIGS. 24 and 31, a dam body 270 is formed on the package substrate 21 by a dispenser 294 to define a cavity 272 in which the LED wafer 220, the light reflecting layer 250, and the light distribution layer 260 are accommodated. (Step S130). That is, in the process, the dam body 270 is formed by applying a resin material along the edge of the package substrate 210 by the dispenser 294. The formation of the dam 270 constitutes a cavity 272 in which the Guranna LED wafer 220, the light reflecting layer 250, and the light distributing layer 260 are used in 37 95182 201201355. In this case, the resin material used to form the dam 270 may be a buffer material. Therefore, although the package substrate 陶瓷1〇 made of a ceramic material expands or contracts during the heating and cooling operation of the process, since the dam body 17 can be deformed to correspond to the degree of expansion and contraction, the package substrate can be effectively prevented. The phenomenon of 210 bending or the like, and alumina having excellent heat resistance can be used as the material of the package substrate 210. When the cavity 172 is formed on the package substrate 110 as in the LED package ι00 of the seventh or eighth embodiment, or when the package substrate 11 〇 includes the first and second substrates 116 and 118, the process can be omitted. Thereafter, as shown in FIGS. 25 and 32, a mixture 249 containing a transparent resin (142 of FIG. 2), phosphor powder (144 of FIG. 2), and a solvent is applied to each LED wafer 22 by a dispenser 292. The upper surface of the crucible is formed to form the wavelength conversion layer 240 (step S140). As described above with reference to Figs. 19 to 21, a mixture 249 containing a transparent tree moon (142 of Fig. 2), phosphor powder (144 of Fig. 2), and a solvent is dispensed onto each of the LED wafers 220. On the surface, the wavelength conversion layer 240 may be formed. That is, as described above, the amount of the phosphor powder (144 of FIG. 2) may be increased to be, for example, twice as much as the weight ratio of the transparent resin (142 of FIG. 2). The fluidity of the mixture of the transparent resin and the phosphor powder is reduced, so that the wavelength conversion layer 240 # is formed on the flat portion 246 of the other portion than the portion adjacent to the corner of the upper surface of the wafer 220. However, in this case, increasing the viscosity of the mixture 249 with 95182 38 201201355 phosphor (144 of Fig. 2) may interfere with the smooth coating of the mixture 249, thus adding solvent to the mixture 249 for a smooth dispensing operation and thus dispensing Temporary fluidity is provided to the mixture 249 during the process. Therefore, the mixture 249 can be effectively coated on the upper surface of the LED wafer 220 while precisely adjusting the configuration, thickness or the like of the wavelength conversion layer 240. As described above, the solvent may be made of a volatile material to provide temporary fluidity, and the amount of the solvent may be about one tenth of the phosphor powder (144 of Fig. 2) by weight. Meanwhile, in the u:D package 1A shown in FIG. 17, the mixed material 249 is even coated on the side surface of the LED wafer 120 and the upper surface of the LED wafer 120 to be formed by the LED wafer 12 The upper surface extends to the wavelength conversion layer 14A on the side of the LED wafer 120. In addition, in this case, when the mixture 249 is applied to the upper surface and the side surface of the LED wafer 120, the solvent can be removed by evaporation, and therefore, the surface of the wavelength conversion layer 140 can have a surface parallel to the upper surface of the LED wafer 12 and Flat side 246 on the side. Subsequently, as shown in Figs. 26 to 33, the light reflecting layer 250 is formed on the package substrate 210 to surround the side surface of the LED wafer 220 (step S150). For example, the light reflecting layer 250 may be formed by a filling or molding operation by filling a region around the LED wafer 22 with a material containing a reflective material (or a reflective material) (e.g., titanium oxide or the like). In this case, since the dam body 27's formed on the package substrate 21'b defines the cavity 272 for forming the light-reflecting layer 250, the light-reflecting layer 250 can be more easily formed according to the aforementioned process, 39 95182 201201355. Then, as shown in Figs. 27 and 34, the light distribution layer 260 covering the wavelength conversion layer 240 and the light reflection layer 250 is formed (step S160). For example, a light distribution layer 260 can be formed by applying a material containing a dispersant (e.g., cerium oxide or the like) to the light reflecting layer 250 and the wavelength converting layer 240 by a dispensing operation. Like the light reflecting layer 250, the light distributing layer 260 can be easily formed by means of the aforementioned dam 270. Meanwhile, in the case of the LED package 100 of Fig. 14, the light reflecting layer 150 and the light distributing layer 160 are omitted, and the transparent cover layer 180 is formed on the LED wafer 120. Therefore, in the case of the LED package 1A of FIG. 14, the process of forming the light-reflecting layer 15A and the process of forming the light-distributing layer 160 are omitted. However, it is necessary to additionally perform the formation of the transparent cover layer 18 on the led wafer. Process. Thereafter, as shown in Figs. 28 and 35, the edge of the dam body 270 is removed from the dam body 270 and the package base material 210 (step S170). That is, after the light distribution layer 260 is formed, the package substrate 210 is cut into the unit LED package 200' and the dam body 270 that can be used to form the light reflection layer 250 and the light distribution layer 260 is formed in the package substrate 210. The edge of the dam body 270. As described above, in the exemplary embodiment, the flow of the LED package 200 in which a plurality of LED chips 220 are mounted on the package substrate 21 () and separated by a cutting process is exemplified. However, as in the case of Fig. 15, the process of removing the dam 270 may be omitted in the case where the LED package 170 has the dam body 170 left in the final product. 40 95182 201201355 As described above, according to an exemplary embodiment of the present invention, since the total area of the light emitting surface of the LED package is reduced, the luminous efficiency of the LED package can be improved. In addition, since light having a uniform color temperature is emitted from the light emitting surface on the upper surface of the LED wafer, the color blur of the light can be reduced. In addition, it is also possible to effectively reduce color temperature variations that may occur between products. Although the present invention has been illustrated and described with reference to the embodiments of the present invention, it is understood that modifications and variations may be made without departing from the spirit and scope of the invention as defined by the appended claims. BRIEF DESCRIPTION OF THE DRAWINGS The above and other aspects, features and other advantages of the present invention will become more apparent from the detailed description of the appended claims. 1 is a cross-sectional view illustrating a light emitting diode (LED) package in accordance with an exemplary embodiment of the present invention; FIG. 2 is a schematic view showing a wavelength conversion layer of an LED package in accordance with an exemplary embodiment of the present invention 3 is a graph showing a color temperature characteristic of an LED package according to an exemplary embodiment of the present invention; and FIG. 4 to FIG. 6 are cross-sectional views illustrating an LED of an LED package according to an exemplary embodiment of the present invention. Wafer; FIGS. 7 through 9 are cross-sectional views illustrating a light emitting diode (LED) package in accordance with another exemplary embodiment of the present invention; FIG. 10 is a cross-sectional view according to another exemplary embodiment of the present invention FIG. 11 is a plan view of the LED package of FIG. 10; 41 95182 201201355 The graph of FIG. 12 illustrates the light distribution pattern of the LED package of FIG. 10; FIG. FIG. 10 is a cross-sectional view of the LED package according to an exemplary embodiment of the present invention; FIG. 17 is a schematic view of the LED package according to an exemplary embodiment of the present invention; Illustrative implementation Illustrated LED package; FIG. 18 is a flow chart illustrating a flow of an LED package manufacturing method according to an exemplary embodiment of the present invention; and FIGS. 19 to 21 are views according to an exemplary embodiment of the present invention A flow chart for forming a wavelength conversion layer in a method of manufacturing an LED package; a cross-sectional view of FIGS. 22 to 28 each illustrating a flow of a method of manufacturing an LED package according to an exemplary embodiment of the present invention; and FIG. 29 to 35. Plan view of the drawings each illustrates a flow of a method of fabricating an LED package in accordance with another exemplary embodiment of the present invention. [Main component symbol description] 100, 200 LED package 110, 210 package substrate 112, 212 circuit pattern 114, 214 adhesive layer 116 first substrate 118 second substrate 120, 220 LED wafer 121 '221 electrode pad 122, 222 structure support layer 123, 223 light-emitting structure 124 P-type semiconductor layer 125 active layer 126 n-type semiconductor layer 127 growth substrate 130, 230 wire 140, 240 wavelength conversion layer 42 95182 201201355 142 transparent resin 144 fluorescent powder 146, 246 flat Face 148, 248 Curve 150, 250 Light Reflective Layer 160, 260 Light Distribution Layer 170, 270 Dam 172, 272 Cavity 180 Transparent Cover Layer 249 Mixture 292 &gt; 294 Dispenser 296 Heating Device S110 Mounting the LED Wafer on the Package Substrate The upper S120 electrically connects the package substrate and the LED chip S130 with a wire, and forms a dam on the package substrate with a dispenser to define a cavity S140 for accommodating the LED chip, the light reflection layer and the light distribution layer, and coating the transparent resin with a dispenser, A mixture of phosphor powder and solvent is formed on the upper surface of the LED wafer to form a wavelength conversion layer (the solvent system is removed from the mixture) The solvent is evaporated by heating the mixture) S150 forms a light reflecting layer on the package substrate to surround the side surface S160 of the LED wafer to form a light distribution layer S170 covering the wavelength conversion layer and the light reflection layer. The dam body is formed in the dam body and the package substrate. Edge 43 95182

Claims (1)

201201355 VII. Patent Application Range: 1. A light emitting diode (LED) package comprising: a package substrate; an LED chip mounted on the package substrate; and a wavelength conversion layer formed to cover at least a portion The upper surface of the LED wafer, and the surface formed by the LED chip when viewed from above is defined as the upper surface of the LED chip, wherein the wavelength conversion layer is formed not to exceed the upper surface of the LED chip And a region including a flat surface parallel to the upper surface of the LED wafer and a curved surface connecting the corners of the upper surface of the LED wafer. 2. The package of claim 1, further comprising: a light reflecting layer formed on the package substrate to surround a side of the LED wafer. 3. The package of claim 2, wherein the light reflecting layer is made of a material containing titanium dioxide. 4. The package of claim 2, further comprising: a light distribution layer covering the wavelength conversion layer and the light reflection layer. 5. The package of claim 4, wherein the light distribution layer is made of a material containing cerium oxide. 6. The package of claim 4, further comprising: a dam formed on the package substrate to define a LED wafer, the light reflective layer, and the light distribution layer received therein Cavity. 7. The package of claim 6, wherein the dam is made of a resin-containing material. 1 95182 201201355 8. The package of claim 1, further comprising: a transparent cover layer covering the LED wafer. 9. The package of claim 1, wherein the package substrate is made of a ceramic-containing material. 10. The package of claim 1, wherein the wavelength conversion layer is made of a material containing a transparent resin and a phosphor. 11. The package of claim 10, wherein the weight ratio of the phosphor to the transparent resin is 2:1 or greater. 12. The package of claim 2, wherein the LED wafer comprises: a structural support layer made of a conductive material; and a light-emitting structure formed on one surface of the structural support layer and comprising P A semiconductor layer, an active layer, and an n-type semiconductor layer. 13. The package of claim 12, wherein the light emitting structure is formed on a portion of one surface of the structural support layer, and the upper surface of the LED chip includes a surface of the light emitting structure And a surface of the structural support layer is located in other remaining regions in which the light-emitting structure is not formed. 14. The package of claim 1, wherein the LED wafer comprises: a growth substrate; and a light emitting structure formed on one surface of the growth substrate and comprising an n-type semiconductor layer, an active layer, and The p-type semiconductor layer, wherein the active layer and the p-type semiconductor layer are formed on one surface of one surface 2 95182 201201355 of the n-type semiconductor layer. 15. The package of claim 2, wherein the upper surface of the LED chip comprises a surface of the p-type semiconductor layer and a surface of the n-type semiconductor layer in which the active is not formed The layer and other remaining regions of the germanium-type semiconductor layer. 16. The package of claim 14, wherein the upper surface of the LED wafer is the other surface of the growth substrate. 17. The package of claim 1, further comprising: an electrode pad formed on the upper surface of the LED wafer, wherein the wavelength conversion layer is formed to cover the electrode pad. 18. The package of claim 17, further comprising: an electrical wire electrically connecting the electrode pad to the package substrate. 19. The package of claim 1 wherein the wavelength conversion layer extends to a side of the LED wafer. 20. The package of claim 1, wherein a plurality of LED chips and a plurality of wavelength conversion layers are formed, and the plurality of wavelength conversion layers are each formed on an upper surface of the plurality of LED wafers. 21. A lighting device comprising the LED package of claim 1 of the patent application. 22. A method for manufacturing an LED package, the method comprising the steps of: mounting an LED chip on a package substrate; and coating a mixture comprising a transparent resin, a phosphor, and a solvent onto an upper surface of the LED wafer, 95182 201201355 wherein, after the solvent is removed from the mixture in a process of applying the mixture, the wavelength converting layer is formed to not exceed a region of the upper surface of the LED wafer and includes a parallel to the upper surface of the LED wafer A flat surface and a curved surface connecting the flat surface and a corner of the upper surface of the LED chip, and a surface formed by the LED wafer when viewed from above is defined as the upper surface of the LED wafer. 23. The method of claim 22, wherein the solvent is made of a volatile material. 24. The method of claim 22, further comprising the step of: heating the solution applied to the upper surface of the LED wafer by evaporation of the solvent during the coating of the mixture. 25. The method of claim 22, wherein the dispensing of the mixture is performed using a dispenser. 26. The method of claim 25, wherein the coating comprises: continuously coating the mixture to maintain the mixture continuously applied from the dispenser to the upper surface of the LED wafer. status. 27. The method of claim 25, wherein the coating of the mixture is performed while the dispenser is moving over the upper surface of the LED wafer in a spiral or zigzag manner. 28. The method of claim 22, further comprising the step of: after coating the mixture, forming a light reflective layer on the package substrate to surround the side of the LED wafer. 29. The method of claim 28, wherein the light reflecting layer is made of a material containing titanium dioxide. 4 95182 201201355 30. As in the 28th paragraph of the patent application scope, the following steps are included: In forming the light beam, the light distribution layer of the light reflecting layer is formed. The method of covering the wavelength conversion layer and the method of the third aspect of the invention, wherein the layer is made of a material containing cerium oxide.九刀布32. The method of claim y, as described in claim 30, includes the following steps: Before the affiliation, the money is returned to form a soil to the LED wafer, the light reflecting layer and The light distribution layer houses a cavity therein. 33. The method of claim 32, wherein the soil is formed on an edge of the package substrate, the method further comprising the following (4): after the (four) light distribution layer, removing the dam and The package substrate has an edge on which the domain body is formed. 34. The method of claim 32, wherein the lobe is made of a resin-containing material. The method of claim 32, wherein the dispenser is used to perform the formation of the dam. 36. The method of claim 32, further comprising the step of: forming a transparent cover layer overlying the LED wafer after coating of the mixture. The method of claim 2, wherein the package substrate is made of a ceramic-containing material. 38. The method of claim 22, wherein the weight ratio of the phosphor powder to the transparent resin is 2:1 or greater. The method of claim 22, wherein the LED chip comprises: a structural support layer made of a conductive material; and a light-emitting structure formed on one surface of the structural support layer and A P-type semiconductor layer, an active layer, and an n-type semiconductor layer are included. 40. The method of claim 39, wherein the light emitting structure is formed on a portion of a surface of the structural support layer, and the upper surface of the LED chip includes a surface of the light emitting structure and One surface of the structural support layer is for other remaining regions in which the light-emitting structure is not formed. The method of claim 22, wherein the LED chip comprises: a growth substrate, and a light emitting structure formed on one surface of the growth substrate and including an n-type semiconductor layer, an active layer, and p The semiconductor layer, wherein the active layer and the p-type semiconductor layer are formed on a portion of one surface of the n-type semiconductor layer. The method of claim 41, wherein the upper surface of the LED chip comprises a surface of the p-type semiconductor layer and a surface of the n-type semiconductor layer, wherein the active layer is not formed therein And other remaining regions of the p-type semiconductor layer. 43. The method of claim 41, wherein the upper surface of the LED wafer is the other surface of the growth substrate. 44. The method of claim 22, wherein the electrode 6 95182 201201355 is formed on the upper surface of the LED wafer, and the coating of the mixture is performed to cover the electrode pad. 45. The method of claim 41, further comprising the step of: electrically connecting the electrode pad to the package substrate between the mounting of the LED wafer and the coating of the mixture. 46. The method of claim 22, wherein the coating is applied to the upper surface and the side of the LED wafer in the coating of the mixture. 47. The method of claim 22, wherein a plurality of LED wafers are formed, and in the coating of the mixture, the mixture is each applied to the upper surface of the plurality of LED wafers. 95182