JP6229574B2 - Method for manufacturing light emitting device - Google Patents

Description

  The present invention relates to a method for manufacturing a light emitting device, and more particularly, to a method for manufacturing a light emitting device suitable for a backlight application.

  An edge type backlight combining a light emitting device and a light guide plate is known as a backlight for liquid crystal or the like. In the edge type backlight, it is necessary to make the light of the light emitting device incident on the light guide plate. However, since the backlight is currently desired to be thin, the light guide plate is also becoming thin. Therefore, it is necessary to reduce the size of the light emitting device (particularly, the light emitting surface of the light emitting device) in order to make light efficiently enter the thin light guide plate.

  By the way, as a light emitting device suitably used as an edge type backlight, for example, a side view type light emitting device is known. As a typical side view type light emitting device, a device in which a semiconductor light emitting element is accommodated in a concave portion of a housing formed of a reflective material can be cited.

  However, it is difficult to reduce the thickness of a light emitting device including a housing. Thus, as a light emitting device that does not include a housing, a device in which a light emitting element is directly covered with a reflective material is disclosed (for example, Patent Document 1). In Patent Document 1, a plate-like translucent member containing a yellow phosphor is placed on the upper surface of a blue light emitting element, and the upper surface of the translucent member is exemplified as a light emitting surface of a light emitting device. ing. Then, by making the area of the lower surface of the translucent member larger than the area of the upper surface of the light emitting element, heat from the light emitting element is efficiently released to the outside of the light emitting device.

  Furthermore, a light emitting diode package including a wavelength conversion layer having a curved side surface and a flat upper surface is also known (for example, Patent Document 2). In Patent Document 2, the upper surface of the wavelength conversion layer on the light emitting diode chip is formed flat by applying and curing a phosphor-containing resin having a high viscosity. The light reflecting layer covers only the side surface of the light emitting diode chip and the side surface of the wavelength conversion layer, so that the flat upper surface of the wavelength conversion layer is exposed and used as a light emitting surface.

JP 2010-272847 A JP 2011-228703 A

However, in the light emitting device of Patent Document 1, since the light emitting surface is larger than the light emitting area of the light emitting element, use in combination with a thin light guide plate is not considered.
In Patent Document 2, since the upper surface of the wavelength conversion layer, which is the light emitting surface of the light emitting diode package, has a smaller area than the upper surface of the light emitting diode chip, the light emitting surface of the light emitting diode package is smaller than the light emitting area of the light emitting diode chip. Become.
However, in the method for manufacturing the light emitting device disclosed in Patent Document 2, it is difficult to expose the light emitting surface. In other words, in order to expose the light emitting surface, the side surface of the wavelength conversion layer and the side surface of the light emitting diode chip are covered with the light reflection layer, and the light reflection is performed so that the upper surface of the flat wavelength conversion layer is not covered with the light reflection layer. It is necessary to control the filling of the layer with high accuracy.

  Accordingly, an object of the present invention is to provide a method for manufacturing a light emitting device having a light emitting surface of a light emitting device that is narrower than the light emitting area of the light emitting element, and in which the area of the light emitting surface can be easily controlled.

The manufacturing method according to the present invention includes:
A light emitting element;
A phosphor-containing layer covering an upper surface of the light emitting element;
A light reflecting member that covers a side surface of the light emitting element and a side surface of the phosphor-containing layer,
The upper surface of the phosphor-containing layer is a method for manufacturing a light emitting device smaller than the lower surface of the phosphor-containing layer,
1) forming the phosphor-containing layer so that the lower surface of the phosphor-containing layer is within the upper surface of the light-emitting element in a top view;
2) At least a step of covering a side surface of the phosphor-containing layer and a side surface of the light emitting element with a light reflecting member;
3) removing the upper part of the light reflecting member and the upper part of the phosphor-containing layer, and exposing the upper surface of the phosphor-containing layer serving as a light emitting surface substantially flush with the upper surface of the light reflecting member; It is characterized by including.

According to the manufacturing method of the present invention, after the side surface of the phosphor-containing layer and the side surface of the light-emitting element are coated with the light reflecting member, the upper portion of the light reflecting member and the upper portion of the phosphor-containing layer are removed. The flat upper surface of the light reflecting member is formed. Therefore, the flat upper surface is not covered with the light reflecting member. Furthermore, since the side surface of the phosphor-containing layer is not exposed from the light reflecting member, only the upper surface of the phosphor-containing layer can be used as the light emitting surface.
Thus, according to the manufacturing method of this invention, the area of the upper surface of the fluorescent substance containing layer which is a light-projection surface can be controlled easily.

The light-emitting device which concerns on Embodiment 1 is shown, (a) is a schematic top view, (b) is a schematic sectional drawing in the AA of (a). It is a general | schematic partial expanded sectional view of the part enclosed by the broken line B of FIG.1 (b) (ac). (A) is a schematic top view of the fluorescent substance containing layer provided on the light emitting element, (b) is a schematic perspective view. In FIG. 3, the light reflecting member is omitted to show a specific relationship between the upper surface of the light emitting element and the lower surface of the phosphor-containing layer. (A) is a schematic top view of the fluorescent substance containing layer provided on the light emitting element, (b) is a schematic perspective view. In FIG. 4, the light reflecting member is omitted to show a specific relationship between the upper surface of the light emitting element and the lower surface of the phosphor-containing layer. It is a modification of the light-emitting device concerning Embodiment 1 (ab). It is the schematic of the backlight using the light-emitting device which concerns on Embodiment 1. FIG. 3 is a flowchart for explaining a method for manufacturing the light emitting device according to the first embodiment. FIG. 5 is a schematic cross-sectional view for explaining the method for manufacturing the light emitting device according to the first embodiment. FIG. 5 is a schematic cross-sectional view for explaining the method for manufacturing the light emitting device according to the first embodiment. FIG. 5 is a schematic cross-sectional view for explaining the method for manufacturing the light emitting device according to the first embodiment. 5 is a modification of the light emitting device according to the first embodiment. It is a modification of the light-emitting device concerning Embodiment 1 (a, b).

  Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings. In the following description, terms indicating specific directions and positions (for example, “up”, “down”, “right”, “left” and other terms including those terms) are used as necessary. . The use of these terms is to facilitate understanding of the invention with reference to the drawings, and the technical scope of the present invention is not limited by the meaning of these terms. Moreover, the part of the same code | symbol which appears in several drawing shows the same part or member.

<Embodiment 1>
The light emitting device 11 according to the present embodiment shown in FIG. 1 is suitable mainly for constituting the backlight 90 in combination with the light guide plate 91 (FIG. 6). In the light emitting device 11, the area of the light emitting surface of the light emitting device 11 (corresponding to the upper surface 30 a of the phosphor containing layer 30) is the area of the light emitting surface of the light emitting element 20 due to the configuration of the phosphor containing layer 30 and the light reflecting member 40. Is smaller than That is, the area of the light emitting surface of the light emitting device 11 can be reduced while increasing the light emitting surface of the light emitting element 20 (more precisely, the area of the active layer in the light emitting element 20). Thereby, the light of the light-emitting device 11 can be efficiently incident on the thin light guide plate without using an optical device such as an optical lens.
Hereinafter, the light emitting device 11 according to the present embodiment will be described in detail.

  The light emitting device 11 according to this embodiment shown in FIGS. 1 to 4 includes a light emitting element 20 disposed on the upper surface 80a of the support substrate 80 and a phosphor-containing layer 30 provided on the upper surface 20a of the light emitting element 20. Contains. The phosphor-containing layer 30 includes a lower surface 30b that covers the upper surface 20a of the light emitting element 20, and an upper surface 30a that has an area smaller than the lower surface 30b. The lower surface 30b of the phosphor-containing layer 30 covers the upper surface 20a so as to fit in the upper surface 20a of the light emitting element 20 (FIGS. 3A, 3B, 4A, 4B). . That is, the area of the lower surface 30 b of the phosphor-containing layer 30 is equal to or smaller than the area of the upper surface 20 a of the light emitting element 20, and the entire lower surface 30 b of the phosphor containing layer 30 is located on the upper surface 20 a of the light emitting element 20. .

A specific relationship between the lower surface 30b of the phosphor-containing layer 30 and the upper surface 20a of the light emitting element 20 will be described with reference to FIGS. 3 and 4, the light reflecting member 40 is omitted to show a specific relationship between the upper surface 20 a of the light emitting element 20 and the lower surface 30 b of the phosphor-containing layer 30.
In FIG. 3, the lower surface 30 b of the phosphor-containing layer 30 has substantially the same dimensions and the same shape as the upper surface 20 a of the light emitting element 20 in the top view, and the lower surface 30 b of the phosphor containing layer 30 and the light emitting element 20 The upper surface 20a covers substantially the entire surface. In this way, when the upper surface 20a of the light emitting element and the lower surface 30b of the phosphor-containing layer have substantially the same dimensions and the same shape, and they overlap substantially the entire surface, the light emitted from the light emitting element 20 is emitted from the light emitting element. It is preferable because it can be prevented from spreading beyond the width of the upper surface 20a, and the wavelength can be reliably converted.

  However, the lower surface 30b of the phosphor-containing layer may not cover the entire surface of the upper surface 20a of the light emitting element, and may be of a size that can fit at least on the upper surface 20a of the light emitting element. For example, as shown in FIG. 4, when the phosphor-containing layer 30 having the substantially elliptical lower surface 30 b is disposed on the upper surface 20 a of the substantially rectangular light emitting element 20 in a top view, the upper surface 20 a of the light emitting element. 4 (four corners 20e of the upper surface 20a in FIG. 4) may not be substantially covered by the phosphor-containing layer 30. Here, “not substantially covered” means that a part of the upper surface 20a of the light-emitting element is not covered with the phosphor-containing layer 30 and is covered with the very thin phosphor-containing layer 30. But forms that appear to be uncovered when viewed.

As shown in FIG. 1B, the side surface 20c of the light emitting element 20 and the side surface 30c of the phosphor-containing layer 30 are covered with a light reflecting member 40 (light reflecting molded body 41 and reflecting film 42). In the present embodiment, the “side surface 30c of the phosphor-containing layer 30” refers to the lower surface 30b of the phosphor-containing layer 30 (the surface covering the upper surface 20a of the light emitting element 20) among the surfaces of the phosphor-containing layer 30. The surface excluding the substantially flat upper surface 30a exposed from the light reflecting member 40 (the surface to be the light emitting surface of the light emitting device 11).
By covering the side surface 20c of the light emitting element 20 and the side surface 30c of the phosphor-containing layer 30 with the light reflecting member 40, the light from the light emitting element 20 is mainly not coated with the light reflecting member 40 "phosphor The light is emitted from the upper surface 30a "of the containing layer 30. That is, the light emitting surface of the light emitting device 11 becomes the upper surface 30 a of the phosphor-containing layer 30.

When a part of the upper surface 20a of the light emitting element 20 (for example, the corner 20e in FIG. 4) is not covered with the lower surface 30b of the phosphor-containing layer 30, not only the side surface 20c of the light emitting element 20 but also the part of the upper surface 20a. (For example, the corner 20e) is also covered with the light reflecting member 40.
In addition, when the thickness of the light reflecting member 40 is thin, a part of the light from the light emitting element 20 may pass through the light reflecting member 40 and leak outside. However, since most of the emitted light is reflected without passing through the light reflecting member 40, there is almost no problem in using the light emitting device 11. Moreover, if not only the light emitted from the upper surface 30a of the phosphor-containing layer 30 but also the light transmitted through the light reflecting member 40 can be taken into the light guide plate 91, the output of the light emitting device 11 can be improved. Furthermore, the light transmitted from the light reflecting member 40 is taken into the light guide plate 91, so that the colors are mixed and uneven color is suppressed.

  As described above, the upper surface 30a of the phosphor-containing layer 30 is smaller than the lower surface 30b, the lower surface 30b of the phosphor-containing layer 30 is smaller than the upper surface 20a of the light emitting element 20, and is disposed within the upper surface 20a, and emits light. By covering the side surface 20 c of the element 20 and the side surface 30 c of the phosphor-containing layer 30 with the light reflecting member 40, the light emitting surface of the light emitting device 11 can be made smaller than the light emitting surface of the light emitting element 20. That is, since the light emitted from the light emitting device 11 is emitted from a narrow light emitting surface, even the thin light guide plate 91 can efficiently make the light incident.

  The side surface 30c of the phosphor-containing layer 30 can be inclined inward from the lower surface 30b of the phosphor-containing layer 30 to the upper surface 30a. That is, part or all of the side surface 30c can be inclined inward so that the upper surface 30a is smaller than the lower surface 30b. As an example, the side surface 30c can be inclined inward from the lower surface 30b toward the upper surface 30a (FIG. 1B, etc.). In this specification, “inward” refers to a direction toward an axis C that passes through the center of the upper surface 30a of the phosphor-containing layer 30 and extends in a direction perpendicular to the upper surface 30a (z-axis direction) (FIG. 1 ( b), FIG. 3B, FIG. 4B).

  When the side surface 30c of the phosphor-containing layer 30 is inclined from the lower surface 30b to the upper surface 30a, it is preferable that the side surface 30c is an outwardly convex curved surface (FIG. 1B). When the side surface 30c is an outwardly convex curved surface, the light reflecting member 40 that covers the side surface 30c becomes a concave curved surface, so that the light condensing effect can be enhanced. That is, the light reflecting member 40 covering the side surface 30c can function as a reflecting surface capable of efficiently reflecting light upward. Moreover, since it can be formed using surface tension if it is a convex curved surface, it is advantageous in that it can be efficiently formed without using a mold or the like when forming the phosphor-containing layer 30.

  The upper surface of the light reflecting member 40 (the upper surface 41a of the light reflecting molded body 41 and the upper surface 42a of the reflecting film 42) and the upper surface 30a of the phosphor-containing layer 30 are formed substantially flush with each other (FIG. 1B). )). Accordingly, light is prevented from leaking from the side surface 30c of the phosphor-containing layer 30, and the upper surface 30a of the phosphor-containing layer 30 is prevented from being covered with the light reflecting member 40, thereby reliably exposing the light emitting surface. Can be made.

  Note that the upper surface 30a of the phosphor-containing layer 30 that is substantially flush with the upper surface of the light reflecting member 40 as described above is formed by, for example, cutting the phosphor-containing layer 30 and the upper portion of the light reflecting member 40 at once, as will be described later. And then removed. At the time of cutting, fine irregularities may occur on the cutting surface (the upper surface 30a of the phosphor-containing layer 30 and the upper surface 41a of the light reflecting member 40). When the upper surface 30a of the phosphor-containing layer 30 (corresponding to the light emitting surface of the light emitting device 11) has such irregularities due to cutting, light extraction can be improved.

Further, when the side surface 30c of the phosphor-containing layer 30 is formed using surface tension as described above, the side surface 30c is extremely smooth (that is, the surface roughness is small). For this reason, the inner surface of the light reflecting member 40 that covers the side surface 30c (the surface that is in direct contact with the phosphor-containing layer 30 and functions as the light reflecting surface) is also as smooth as the side surface 30c. Light from the element 20 can be efficiently reflected.
Therefore, when the surface roughness of the upper surface 30a is larger than the surface roughness of the side surface 30c, the phosphor-containing layer 30 increases the light reflection efficiency of the light reflecting surface of the light reflecting member 40 covering the side surface 30c from the upper surface 30a. The light extraction efficiency can be increased.

  As shown in FIG. 2, the phosphor-containing layer 30 includes a translucent base material 36 and a phosphor 35 contained in the base material 36. Although the base material 36 will not be specifically limited if it is a translucent material, For example, organic materials, such as inorganic materials, such as glass, and resin can be used. In particular, when the base material 36 is a resin, the phosphor-containing layer 30 that easily fits on the upper surface 20a of the light emitting element 20 can be formed by the surface tension of the liquid resin before curing. When the phosphor 35 is contained in the substrate 36, the phosphor 35 can be dispersed throughout the substrate 36 (FIG. 2A), but the phosphor layer 31 containing the phosphor 35 and the fluorescence The phosphor-containing layer 30 including the transparent layer 32 made of the base material 36 that hardly contains the body 35 is preferable.

Since the phosphor 35 can scatter light, if the phosphor 35 is dispersed in the phosphor-containing layer 30 (especially when it is present on the upper surface 30a side), the light is scattered when emitted from the upper surface 30a. End up. When such a light emitting device is used as a light source for backlight, the light incident on the light guide plate 91 can be reduced due to scattering and spreading of light from the light emitting device 11.
On the other hand, the phosphor layer 31 including the phosphor 35 is disposed on the lower surface 30b side of the phosphor-containing layer 30, and the transparent layer 32 substantially not including the phosphor 35 is disposed on the upper surface 30a side. Light wavelength conversion can be performed on the lower surface 30b side of the containing layer 30, and light scattering on the upper surface 30a side can be suppressed. Thereby, the wavelength of the light of the light emitting device 11 can be efficiently converted and can be efficiently incident on the light guide plate 91.

  In addition, the transparent layer 32 can be formed from the base material 36 which hardly forms the fluorescent substance 35 formed by making the fluorescent substance 35 settle in the base material 36. In that case, the transparent layer 32 may contain a small amount of the phosphor 35. If the content of the phosphor 35 contained in the transparent layer 32 is sufficiently small and the incident efficiency of the light emitting device 11 is not significantly reduced, it can be considered that the phosphor 35 is not substantially contained.

By setting the phosphor layer 31 to a substantially uniform thickness as shown in FIG. 2B, the light passing through the phosphor layer 31 can be made to have a substantially uniform color as a whole. On the other hand, as shown in FIG. 2C, the phosphor layer 31 is partially thinned (in some cases, the phosphor layer 31 is not partially formed), so that the phosphor is not sufficiently wavelength-converted. The proportion of light passing through the layer 31 can also be increased. In FIG. 2C, the phosphor layer 31 is thin at the outer edge of the phosphor layer 31 and thick at the center side of the phosphor layer 31.
In FIG. 2C, the phosphor layer 31 is present on the entire lower surface 30 b of the phosphor-containing layer 30. However, the outer edge portion of the phosphor layer 31 may be separated from the outer edge portion of the phosphor-containing layer 30 (that is, it may extend only to the inside from the outer edge portion of the phosphor-containing layer 30). In that case, the transparent layer 32 is disposed on a part (outer edge) of the lower surface 30 b of the phosphor-containing layer 30.

The color unevenness of the emission color of the light emitting device 11 due to the form of the phosphor layer 31 will be examined.
As shown in FIG. 2C, when the thickness of the phosphor layer 31 included in the light emitting device 11 is not uniform, it passes through the vicinity of the center of the phosphor layer 31 (part where the phosphor layer 31 is relatively thick). The ratio of the light whose wavelength is converted by the phosphor 35 is different between the light and the light passing through the outer edge of the phosphor layer 31 (the portion where the phosphor layer 31 is relatively thin). Further, when the transparent layer 32 is disposed on a part (for example, the outer edge part) of the lower surface 30b of the phosphor-containing layer 30, the light that has passed through the part does not pass through the phosphor layer 31, and therefore wavelength conversion is performed. Not. Therefore, color unevenness may occur inside the phosphor-containing layer 30. However, a part of the light with uneven color is reflected by the inner surface of the light reflecting member 40 covering the phosphor-containing layer 30 and passes through the phosphor layer 31 again, and sufficient wavelength conversion is performed. When the light is emitted from the light emitting surface of the device 11, the color unevenness can be reduced or eliminated. Furthermore, when uneven color light is reflected and mixed by the inner surface of the light reflecting member 40, uneven color can be reduced or eliminated when the light is emitted from the light emitting surface of the light emitting device 11.

  Further, as described above, since the light reflecting member 40 is thin, a part of the light can pass through the light reflecting member 40 (without being reflected by the inner surface of the light reflecting member 40). If this transmitted light is light that has not been (sufficiently) wavelength-converted, color unevenness may occur in the outgoing light from the light emitting device 11. However, even such a light emitting device 11 is used as the backlight 90 in combination with the light guide plate 91 (FIG. 6), and is mixed during propagation through the light guide plate 91, thereby eliminating color unevenness. obtain.

Next, the light reflecting member 40 will be described in detail with reference to FIGS. 1 and 5.
In the light emitting device 11 shown in FIG. 1B, the light reflecting member 40 is formed by laminating two members, a reflective film 42 and a light reflective molded body 41. By forming the reflective film 42 from a material having a high light reflectivity, light can be efficiently reflected even if it is a thin film. It is preferable that the reflective film 42 is made of an insulating material because the reflective film 42 can be directly formed on the side surface 20 c of the light emitting element 20. It is preferable that the reflective film 42 is made of a metal material because a material having a high light reflectance can be used. However, as will be described later, when the reflective film 42 is formed so as to cover all of the side surface 20c of the light emitting element 20 and the side surface 30c of the phosphor-containing layer 30, the reflective film 42 made of a metal material is provided on the side surface of the light emitting element 20. If formed directly on 20c, the light emitting element 20 is short-circuited. When the reflective film 42 made of a metal material is provided, the light emitting element 20 is prevented from being short-circuited by providing the side surface 20c of the light emitting element 20 with, for example, a light-transmitting insulating film (eg, SiO ₂ ). can do.

In the light emitting device 11 shown in FIG. 1B, the reflective film 42 formed on the side surface 20 c of the light emitting element is covered with the light reflective molded body 41. Thereby, even when light leaks from the reflective film 42, it can be reliably reflected by the outer light reflective molded body 41. The light reflective molded body 41 can also function as a protective member that protects the light emitting element 20 and the like.
When the light reflecting member 40 includes the reflective film 42 and the light reflective molded body 41, the light reflective molded body has a light reflectance higher than that of the light reflective molded body 41. Even if 41 is relatively thin, light leakage can be sufficiently suppressed.
In addition, when the light reflective molded object 41 contains resin, it is comparatively weak to strong heat and light. Therefore, when the light reflective molded body 41 is directly formed on the side surface 20 c of the light emitting element 20, the light reflective molded body 41 may be discolored or deteriorated by heat and light generated in the light emitting element 20. Here, by having the reflective film 42 between the light emitting element 20 and the light reflective molded body 41, discoloration and deterioration of the light reflective molded body 41 can be suppressed.

As another form, in the light-emitting device 12 shown to Fig.5 (a), the light reflection member 40 is formed only from the light reflective molded object 41. FIG. This form is advantageous in that the step of forming the reflective film 42 can be omitted. Here, when the base material of the phosphor-containing layer 30 is a resin, it is preferable that the base material of the light-reflective molded body 41 is also a resin because the adhesion between both members is improved. Furthermore, as will be described later, when the upper surface 30a of the phosphor-containing layer 30 is exposed by removing the phosphor-containing layer 30 and the upper part of the light reflecting member 40, the phosphor-containing layer 30 and the light reflecting member 40 to be removed are removed. If the base material is the same, it is easy to remove by cutting or the like.
Further, in the light emitting device 13 shown in FIG. 5B, the light reflecting member 40 is formed only from the reflecting film 42. In this embodiment, the light reflecting member 40 can be made thin, which is advantageous for downsizing the light emitting device.
In the present embodiment, the light reflecting member 40 is disclosed with a one-layer structure (FIGS. 5A and 5B) and a two-layer structure (FIG. 1B). The light reflecting member 40 configured as described above (for example, a three-layer structure in which one light-reflective molded body 41 is disposed between two layers of reflective films 42, or between two layers of light-reflective molded bodies 41). A light reflecting member 40) having a laminated structure such as a three-layer structure in which a single-layer reflecting film 42 is disposed may be used. As an example of the light reflecting member 40 having a two-layer structure, FIG. 1B shows a configuration in which the light emitting element 20 -the reflective film 42 -the light reflective molded body 41 are stacked in this order (that is, the light emitting element 20 and the light). The configuration in which the reflective film 42 is disposed between the reflective molded body 41 and the reflective molded body 41 is shown, but the configuration in which the light emitting element 20 -the light reflective molded body 41 -the reflective film 42 are stacked in this order (that is, the light emitting element 20 and A configuration in which the light reflective molded body 41 is disposed between the reflective film 42 and the reflective film 42 may be employed.

The light emitting element 20 can be a device provided with a semiconductor stacked body (a stack of an n-side semiconductor layer, an active layer, and a p-side semiconductor layer) on a substrate (for example, a sapphire substrate). The light-emitting element 20 is energized from the positive and negative electrodes 23 (23a, 23b) provided on the semiconductor stacked body side (FIG. 1 (b)).
When the light emitting element 20 is mounted on the support substrate 80, a mounting form in which the substrate side of the light emitting element 20 is mounted on the support substrate 80 (so-called face-up mounting) can be used. A mounting form (so-called flip chip mounting) can be used.

  In flip chip mounting, a pair of positive and negative electrodes 23 provided on the semiconductor laminate side of the light emitting element 20 are connected to wiring (not shown) formed on the upper surface of the support substrate 80, and the substrate side is the phosphor-containing layer 30. Covered with. That is, in the flip-chip mounting, the electrode 23 of the light emitting element 20 is not covered with the phosphor-containing layer 30, so that the electrical connection from the wiring of the support substrate 80 to the light emitting device 11 is easy, which is particularly preferable. Further, since there is no wire or the like in the light emitting direction of the light emitting element 20 as in face-up mounting, light extraction is not reduced. Note that in the case of flip-chip mounting, a light-transmitting member (for example, a sapphire substrate) is used for the substrate of the light emitting element 20, so that light can be efficiently emitted from the substrate side.

In face-up mounting, the substrate side of the light emitting element 20 is fixed to the support substrate 80, and the pair of positive and negative electrodes 23 provided on the semiconductor laminate side and the wiring are electrically connected by a wire or the like. Therefore, the substantially flat substrate side is the mounting surface, and the light emitting element 20 can be mounted stably. Note that in face-up mounting, it is preferable that the substrate of the light-emitting element 20 has translucency because light can be efficiently emitted upward.
Further, in the case of face-up mounting, the semiconductor laminate side of the light emitting element 20 is covered with the phosphor-containing layer 30. Therefore, for example, the phosphor-containing layer 30 is formed from the semiconductor laminate to energize the light emitting element 20. A conductive member that penetrates and reaches the upper surface 30a can be provided.

An example of using a metal bump as a method for forming a conductive member used for face-up mounting will be described.
First, before forming the phosphor-containing layer 30, metal bumps are formed on the electrodes 23 of the light emitting element 20 provided on the semiconductor laminate side. Thereafter, the semiconductor laminate and the metal bump are covered with the phosphor-containing layer 30. Then, the metal bumps are exposed from the upper surface 30a of the phosphor-containing layer 30 by removing (for example, polishing) the upper part of the phosphor-containing layer 30 covering the metal bumps.
Thus, by connecting between the metal bump (conductive member) exposed from the upper surface 30a of the phosphor-containing layer 30 and the wiring of the support substrate with a metal bonding wire or the like, the electrode 23 of the light emitting element 20 and The wiring of the support substrate can be electrically connected.

  Next, an example of a method for manufacturing the light emitting device 11 according to the present embodiment will be described with reference to FIGS.

<Step 1. Formation of phosphor-containing layer 30: S20>
After the light emitting element 20 is mounted on the support substrate 80 (S10 in FIG. 7), the phosphor-containing layer 30 is formed on the upper surface 20a of the light emitting element 20 (S20 in FIG. 7).
When a resin material is used for the base material 36 of the phosphor-containing layer 30, a light-emitting element in which a resin material before curing (that is, a resin material having fluidity) 34 contains a phosphor 35 is used. It can be dripped on the upper surface 20a of 20 (FIG. 8A). The dripping amount of the resin material 34 before curing is adjusted to an amount held on the upper surface 20a of the light emitting element 20 by surface tension. Thereafter, the phosphor-containing layer 30 (the base material 36 containing the phosphor 35) is formed by curing the resin material 34 containing the phosphor 35 (FIG. 8B). The phosphor-containing layer 30 thus obtained is formed by utilizing the surface tension of the liquid resin material 34 before curing, and thus covers the upper surface 20a of the light emitting element 20 and is outside the upper surface 20a. Is not formed. Further, the surface 30s of the phosphor-containing layer 30 formed by utilizing the surface tension is a substantially dome-shaped curved surface. Since a part of the curved surface can be finally used as the side surface 30c of the phosphor-containing layer 30, the side surface 30c of the phosphor-containing layer 30 can be easily formed into a convex curved surface without using a mold or the like. It can be. The curvature and the like of the side surface 30c can be adjusted by the amount and viscosity of the resin material 34 to be dropped.

  In addition, the fluorescent substance containing layer 30 shape | molded previously by the substantially dome shape etc. can also be arrange | positioned with the adhesive agent etc. on the upper surface 20a of a light emitting element. In this case, it is advantageous in that the curvature of the side surface 30c can be arbitrarily controlled. However, in the case of the thin and small phosphor-containing layer 30, it is difficult to accurately arrange the phosphor-containing layer 30 that has been molded in advance on the upper surface 20a of the light emitting element 20. In that respect, if it is a dropping method, even a thin and small phosphor-containing layer 30 can be accurately placed on the upper surface 20a of the light emitting element 20. That is, it is possible to form the thin phosphor-containing layer 30 by lowering the viscosity of the resin material. Further, even if the phosphor material layer 30 is dropped at a position slightly deviated from a desired position, the fluorescent material is caused by the surface tension of the resin material. The body-containing layer 30 can be retained on the upper surface 20 a of the light emitting element 20.

  In addition, when arrange | positioning the fluorescent substance containing layer 30 shape | molded previously, the fluorescent substance containing layer 30 is substantially domed cross-sectional shape (The cross section of the fluorescent substance containing layer 30 is an upper surface from the lower surface 30b as shown in FIG.1 (b). For example, the phosphor-containing layer 30 may have a cross-sectional shape in which the cross-section of the phosphor-containing layer 30 is once expanded from the lower surface 30b toward the upper surface 30a and then becomes narrower. When the phosphor-containing layer 30 having the cross-sectional shape as in the latter is provided, the light incident on the phosphor-containing layer 30 is directed in various directions as compared with the case where the light is incident on the substantially dome-shaped phosphor-containing layer 30. Since it is reflected, it is mixed in the phosphor-containing layer 30 and can exhibit the effect of reducing the color unevenness of the light from the light emitting device. In addition, the cross-sectional shape of the phosphor-containing layer 30 can be freely selected.

  In Embodiment 1, the resin material 34 is cured after the resin material 34 is dropped, but before the curing step, the phosphor 35 in the resin material 34 is allowed to settle to the upper surface 20a side of the light emitting element 20. preferable. At the time of sedimentation of the phosphor 35, a method of allowing it to stand and sedimenting by gravity, a method of promoting sedimentation using centrifugal force, or various other known sedimentation means can be used. By precipitating the phosphor 35, the phosphor-containing layer 30 including the phosphor layer 31 on the lower surface 30b side and the transparent layer 32 on the upper surface 30 side can be formed (FIGS. 2B and 2C). Note that the phosphor layer 31 has a uniform thickness (FIG. 2B) or a thin outer edge (FIG. 2C), etc., by appropriately adjusting the dropping amount, viscosity, etc. of the resin material 34. Can be controlled.

  Moreover, when the phosphor 35 in the resin material 34 is allowed to settle to the upper surface 20a side of the light emitting element 20, the amount of phosphor in the phosphor-containing layer 30 can be easily controlled. Specifically, the upper part of the phosphor-containing layer 30 is removed in step 3 described later. At this time, if the phosphor 35 is dispersed on the phosphor-containing layer 30, part of the phosphor 35 is also removed together, so it is difficult to grasp the amount of phosphor remaining without being removed. It is.

On the other hand, the phosphor 35 is settled to form the phosphor-containing layer 30 including the phosphor layer 31 and the transparent layer 32, so that the upper portion of the phosphor-containing layer 30 is formed in "Step 3" described later. When partially removing, only the transparent layer 32 on the upper side can be removed. That is, since the phosphor 35 can be hardly removed, the amount of the phosphor in the phosphor-containing layer 30 can be controlled with high accuracy (that is, the amount of the phosphor contained in the phosphor layer 31 can be controlled). The amount of the phosphor finally contained in the phosphor-containing layer 30 can be set).
Further, when a part of the transparent layer 32 is removed by cutting or the like, it is advantageous in that the phosphor 35 does not exist on the cut surface (the upper surface 30a of the phosphor-containing layer 30). If the phosphor 35 is exposed on the light exit surface, the light is strongly scattered and the directivity of the light may be lowered. Therefore, it is not preferable for the light emitting device for the backlight. Therefore, by removing only the transparent layer 32 so that the phosphor 35 does not substantially exist on the upper surface 30a of the phosphor-containing layer 30, scattering by the phosphor 35 is suppressed, which is suitable for a backlight. The light emitting device 11 can be provided.

  On the other hand, when the phosphor 35 is intentionally dispersed in the phosphor-containing layer 30 and a part of the upper portion of the phosphor-containing layer 30 is removed in “Step 3” described later, the amount of the phosphor may be reduced. Good. This method is advantageous in that after the phosphor-containing layer 30 is formed, the amount of the phosphor 35 can be adjusted while confirming the actual emission color of the light-emitting device 11.

The method for forming the phosphor-containing layer 30 when using a resin for the base material 36 of the phosphor-containing layer 30 has been described in detail above. However, the material of the base material 36 is not limited to the resin and can be disposed on the light emitting element 20. Any material can be used as long as it is a transparent material.
The phosphor-containing layer 30 may be formed by a method other than the dropping method. For example, the phosphor-containing layer 30 formed in a desired shape in advance as described above can be disposed on the upper surface 20 a of the light emitting element 20. In the case where the phosphor-containing layer 30 includes the phosphor layer 31 and the transparent layer 32, the phosphor-containing layer 30 can be formed by separately forming them and laminating them. By doing so, it is easy to adjust the thickness and shape of the phosphor layer 31 and the transparent layer 32, respectively. The phosphor-containing layer 30 may be formed by spraying or the like using a spray. By doing so, the phosphor-containing layer 30 can be easily formed with a desired thickness as appropriate. In particular, in spraying by spraying, it is easier to adjust the thickness of the phosphor-containing layer 30 and to form a thin phosphor-containing layer 30 than in the dropping method. By forming the moderately thin phosphor-containing layer 30, the amount of the phosphor-containing layer 30 removed in “Step 3” described later can be reduced. Therefore, the amount of material and manufacturing cost required for manufacturing the light emitting device 11 can be reduced.

<2. Formation of light reflecting member 40: S30, S40>
A light reflecting member 40 that covers all of the side surface 20c of the light emitting element 20 and the surface 30s of the phosphor-containing layer 30 is provided.
When the light reflecting member 40 includes the reflective film 42 and the light reflective molded body 41, first, the reflective film 42 that covers all of the side surface 20c of the light emitting element 20 and the surface 30s of the phosphor-containing layer 30 is formed (see FIG. S30 in FIG. 7, FIG. 8C). The reflective film 42 can be formed by a film forming method such as sputtering, CVD, coating, or spraying.
Next, a mold die 70 surrounding the light emitting element 20, the light reflecting member 40, and the support substrate 80 is disposed, and a resin material 34 containing a reflective substance is injected into the mold die 70 (FIG. 9A). Thereafter, the resin material 34 is cured to mold the light reflective molded body 41 that covers the upper surface 80a of the support substrate 80 and the reflective film 42 (S40 in FIG. 7, FIG. 9B).

In addition, you may perform the "formation of the light-reflective molded object 41" process (S40) before the "formation of the reflective film 42" process (S30) of FIG. Thereby, the structure laminated | stacked in order of the light emitting element 20-light reflective molded object 41-reflective film 42 (namely, the structure by which the light reflective molded object 41 is arrange | positioned between the light emitting element 20 and the reflective film 42). Can be formed.
In addition, before and after the “formation of the light-reflective molded body 41” step (S40), the “formation of the reflective film 42” step (S30) may be performed once, twice in total. Thereby, the light reflecting member 40 having a three-layer structure in which the one-layer light-reflecting molded body 41 is disposed between the two-layer reflecting films 42 can be formed. As described above, since the reflective film 42 can be made of a metal material having a high reflectance, the light reflecting member 40 in which the light from the light emitting element 20 is more difficult to transmit can be obtained by including two layers of the reflective film 42. . The thickness of the light reflecting member 40 can be freely selected as appropriate. However, when a thin small light emitting device is formed, the light reflecting member 40 is formed as thin as possible with a thickness that does not transmit light from the light emitting element. It is preferable.

<3. Removal step: S50>
Finally, the unprocessed upper surface 41x of the light reflective molded body 41 that has been molded in step S40 is removed up to the line XX (S50 in FIG. 7). Thereby, the upper part of the light reflective molded body 41, the upper part of the reflective film 42, and the upper part of the phosphor-containing layer 30 are removed. These removals can be performed by polishing or cutting, for example. By this removal step, the light emitting device 11 in which the upper surface 41a of the light reflective molded body 41, the upper surface 42a of the reflective film 42, and the upper surface 30a of the phosphor-containing layer 30 are substantially flush can be obtained (FIG. 1).
When the phosphor-containing layer 30 includes the phosphor layer 31 and the transparent layer 32, when removing the phosphor-containing layer 30, the upper side is disposed so that the phosphor 35 disposed on the lower side is not substantially removed. It is desirable that a part of the transparent layer 32 disposed on the substrate is removed. Therefore, it is desirable to set the position of the XX line higher than the phosphor layer 31. By doing so, since resistance of cutting and polishing due to the presence of the phosphor 35 does not occur, polishing and cutting can be performed smoothly. Further, the upper surface 30a can be formed so that the phosphor 35 does not substantially exist on the upper surface 30a of the phosphor-containing layer 30. In addition, the position of the XX line can be set as appropriate so that desired light emission can be obtained.

  In this way, the light reflecting member 40 (the light reflecting molded body 41 and the reflecting film 42) and the phosphor-containing layer 30 are simultaneously removed to form the upper surface of the light reflecting member 40 and the upper surface 30a of the phosphor-containing layer 30. By doing so, it is possible to easily form the light reflecting member 40 that covers all the side surfaces 30c of the phosphor-containing layer 30 and exposes the upper surface 30a of the phosphor-containing layer 30 as a light emitting surface. In the present embodiment, even when the desired light emission surface cannot be exposed by one removal, the light emission area and the light emission color can be appropriately adjusted by performing polishing, cutting, etc. a plurality of times.

  As described above, the upper surface 30a of the phosphor-containing layer 30 and the upper surface 41a of the light reflecting member 40 may have fine irregularities caused by polishing, cutting, or the like. In particular, it is preferable that the upper surface 30a of the phosphor-containing layer 30 that is the light emitting surface of the light emitting device 11 has fine irregularities because light extraction can be improved. When the upper portions of the phosphor-containing layer 30 and the light reflecting member 40 are removed by polishing or cutting as in the present embodiment, the upper surface 30a of the phosphor-containing layer 30 and the upper surface 40a of the light reflecting member 40 are substantially flush with each other at the same time. Since it is possible to form fine irregularities due to cutting or the like on the upper surface 30a of the phosphor-containing layer 30, it is possible to improve light extraction with a small number of steps.

Further, when the phosphor-containing layer 30 is formed by the dropping method as described above, the side surface 30c is extremely smooth (that is, the surface roughness is small). For this reason, the inner surface of the light reflecting member 40 that covers the side surface 30c (the surface that is in direct contact with the phosphor-containing layer 30 and functions as the light reflecting surface) is also as smooth as the side surface 30c. Light from the element 20 can be efficiently reflected.
Therefore, when the surface roughness of the upper surface 30a is larger than the surface roughness of the side surface 30c, the phosphor-containing layer 30 increases the light reflection efficiency of the light reflecting surface of the light reflecting member 40 covering the side surface 30c from the upper surface 30a. The light extraction efficiency can be increased.

On the other hand, in order to improve the adhesiveness between the side surface 30c of the phosphor-containing layer 30 and the inner surface of the light reflecting member 40, the side surface 30c may be intentionally roughened. Thereby, the adhesiveness of the fluorescent substance containing layer 30 and the light reflection member 40 improves, and it can make it difficult to peel.
In addition, the lower surface 30b of the phosphor-containing layer 30 may be flat or uneven.

In FIG. 9, the upper side from the XX line is removed, so that, for example, as shown in FIG. 10, the light reflecting member on the surface 30 s of the phosphor-containing layer 30 within the range above the XX line. 40 may not be provided. That is, at least the side surface 20c of the light emitting element 20 and the range that becomes the side surface 30c after the step 3 in the surface 30s of the phosphor-containing layer 30 may be covered with the light reflecting member. Thereby, the material to be used can be reduced and the removal work can be shortened.
After the removing step, the light emitting device can be completed by dividing the light emitting device into individual pieces.

Hereinafter, materials and dimensions suitable for each component of the first embodiment will be described.
<Light emitting element 20>
The light emitting element 20 can be selected to have an arbitrary wavelength. For example, as blue and green light-emitting elements, those using ZnSe, nitride-based semiconductors (In _X Al _Y Ga _1-XY N, 0 ≦ X, 0 ≦ Y, X + Y ≦ 1), or GaP are used. it can. As the red light emitting element, GaAlAs, AlInGaP, or the like can be used. Furthermore, a semiconductor light emitting element made of a material other than this can also be used.
The size and shape of the light-emitting element 20 and the number of light-emitting elements 20 included in one light-emitting device can be appropriately selected according to the purpose. In the case of manufacturing a thin light emitting device suitable for a backlight (particularly, a side view type light emitting device), the light emitting surface (upper surface 20a) of the light emitting element 20 is a rectangular light emitting element 20 that is long in one direction. Is particularly preferred (see FIG. 4). The larger the ratio of the dimension in the longitudinal direction (x direction) to the dimension in the short direction (y direction) of the light emitting element 20 in a top view, the more the light emitting area 11 can be used and the light emitting area can be made relatively wide. It is preferable because it is possible.

<Support substrate 80>
The support substrate 80 on which the light emitting element 20 is mounted includes a base body (reference numeral 81 in FIG. 12) made of an insulating material and a wiring (reference numeral 82 in FIG. 12) made of a conductive material formed on the surface of the base body. be able to.
Examples of the base material include insulating materials such as glass epoxy, resin, and ceramics. In particular, a substrate made of ceramics having high heat resistance and weather resistance is preferable. As the ceramic material, alumina, aluminum nitride, mullite, or the like is preferable, and LTCC (low temperature co-fired ceramics) may be used. In addition, an insulating substrate in which the surface of a metal material is coated with an insulating material can also be used.

  Examples of the wiring material include metal materials such as copper, nickel, palladium, tungsten, chromium, titanium, aluminum, silver, gold, and alloys thereof. In addition, since the wiring can be a heat dissipation path for the heat generated in the light emitting element 20, copper or a copper alloy is particularly preferable from the viewpoint of heat dissipation. In addition, a film made of silver, platinum, tin, gold, copper, rhodium, or an alloy thereof can be formed on the surface of the wiring formed of an arbitrary material. Alternatively, the surface of the wiring formed from silver or a silver alloy may be oxidized to form a silver oxide or silver alloy oxide film on the surface of the wiring.

  The support substrate 80 may be not only a plate-shaped structure as shown, but also a structure having a cavity for accommodating the light emitting element 20. When the above-described light-reflective molded body 41 is molded (step S40), the side wall of the cavity can function as a mold, so that the light-reflective property can be obtained without using the mold 70 (FIG. 9A). The formed body 41 can be easily formed.

The substrate may be finally removed. For example, as in the light emitting device 14 of FIG. 12A, only the base 81 may be removed while leaving the wiring 82 of the support substrate 80. Further, as a configuration without the support substrate 80, the electrode 23 of the light emitting element 20 can be exposed to the outside as an electrode of the light emitting device.
In the light emitting device 15 of FIG. 12B, the wiring 82 of the support substrate 80 is separated from the base body 81 and left on the electrode 23 of the light emitting element 20. It functions as an electrode and can be used for conduction with an external electrode. The wiring 82 (stretched electrode) is connected to the electrode of the light emitting element 20 on the lower surface 20b of the light emitting element 20, and extends from there to the outside of the side surface 20c. Since the wiring 82 has a larger area than the electrode 23 of the light emitting element 20, when the heat generated in the light emitting element 20 is radiated to the outside through the electrode 23, the wiring 82 having a large area can be efficiently radiated.
The form of the wiring 82 of the support substrate 80 and the electrode 23 of the light emitting element 20 can be arbitrarily changed.

<Phosphor-containing layer 30>
The phosphor-containing layer 30 includes a translucent substrate 36 and a phosphor 35 mixed with the substrate 36.
As a material of the base material 36, an inorganic material such as glass or an organic material such as resin can be used. In particular, a resin material is preferable. For example, a resin such as a silicone resin, a modified silicone resin, an epoxy resin, a modified epoxy resin, an acrylic resin, or a hybrid resin including at least one of these resins can be used.

Various phosphors can be used as the phosphor 35 as long as the phosphor 35 can absorb light from the light emitting element 20 and emit light of another wavelength. For example, nitride phosphors and oxynitride phosphors mainly activated by lanthanoid elements such as europium and cerium, more specifically, α or β sialon phosphors activated by europium, various alkalis Earth metal nitride silicate phosphors, lanthanoid elements such as europium, alkaline earth metal halogenapatite phosphors mainly activated by transition metal elements such as manganese, alkaline earth halosilicate phosphors, alkaline earth metals Silicate phosphor, alkaline earth metal halogen borate phosphor, alkaline earth metal aluminate phosphor, alkaline earth metal silicate, alkaline earth metal sulfide, alkaline earth metal thiogallate, alkaline earth metal nitride Rare earth aluminate mainly activated by lanthanoid elements such as silicon, germanate, cerium, Examples thereof include organic substances and organic complexes mainly activated with lanthanoid elements such as rare earth silicates or europium. In particular, a YAG phosphor that is a yellow phosphor, a KSF that is a red phosphor, a LAG phosphor that is a green phosphor, and the like are preferably used. In addition, phosphors having similar performance and effects can be used as appropriate. A fluorescent substance can be used individually or in mixture of 2 or more types. The particle size of the phosphor is, for example, in the range of about 1 to 50 μm, preferably in the range of about 5 to 20 μm. In particular, the manufacturing method of this embodiment is suitable for forming a thin phosphor-containing layer, and therefore a phosphor having a small particle diameter can be suitably used.
The concentration of the phosphor 35 contained in the phosphor-containing layer 30 is adjusted so that the light emitting device 11 has a desired emission color. The concentration of the phosphor can be, for example, about 5 to 50%. When the concentration on the lower surface side of the phosphor-containing layer 30 is higher, the light emitted from the light emitting device is less likely to be scattered and easily incident on the light guide plate. Therefore, it is preferable.

The thickness of the phosphor-containing layer 30 (more precisely, the thickness between the upper surface 30a and the lower surface 30b) can be arbitrarily set, and can be set to about 10 to 100 μm, for example. In particular, in the case of a light source for backlight, it is preferable that the light source is formed with a thin thickness of about 20 to 30 μm because wavelength conversion can be appropriately performed and a small light emitting device 11 can be obtained. .
When mounting a plurality of light emitting elements 20 on one support substrate 80, it is preferable that the phosphor-containing layer 30 is formed for each of the light emitting elements 20.

<Light Reflecting Member 40 (Reflective Film 42, Light Reflective Molded Body 41)>
(Reflection film 42)
The reflective film 42 can be formed of a metal material, an insulating material, or the like that has a high light reflectance. The insulating material includes an insulating multilayer film in addition to the material having a high reflectance. Each material is described in detail below.
-Metal material As a metal material suitable for the reflective film 42, silver, a silver alloy, aluminum, gold | metal | money etc. are mentioned, for example. In particular, a silver alloy excellent in oxidation resistance is preferable, and any silver alloy known in the art may be used. The thickness of the reflective film is not particularly limited, and may be a thickness (for example, about 20 nm to about 1 μm) that can effectively reflect the light emitted from the light emitting element.

-Reflective resin material As an insulating material suitable for the reflective film 42, a reflective resin material obtained by adding a reflective substance to a resin material can be used. The reflective film 42 can be formed by curing a liquid resin material that has been added to the liquid resin material before being cured and then applying it to the coating target surface.
As the resin material, for example, a resin such as a silicone resin, a modified silicone resin, an epoxy resin, a modified epoxy resin, an acrylic resin, or a hybrid resin including at least one of these resins can be used.
Examples of the reflective substance include titanium dioxide, silicon dioxide, zinc dioxide, zirconium dioxide, potassium titanate, alumina, aluminum nitride, boron nitride, mullite, niobium oxide, various rare earth oxides (for example, yttrium oxide, gadolinium oxide, etc. The reflectance of the reflective resin material can be increased by increasing the addition amount of the reflective substance, preferably the reflectance for light emission from the light emitting element is 60% or more, more preferably. The addition amount of the reflective substance can be adjusted so that the amount is 70%, 80%, or 90% or more, so that light from the light-emitting element can be reflected efficiently.

-Reflective substance-containing slurry As another insulating material suitable for the reflective film, a slurry in which a reflective substance is dispersed in a binder can be used. The reflective film 42 can be formed by applying the slurry to the surface to be coated by coating or spraying and then drying.

・ Dielectric multilayer (DBR)
The dielectric multilayer film (DBR) is a reflective film that can selectively reflect light having a predetermined wavelength, and has a structure in which two types of insulating films having different refractive indexes are alternately stacked with a predetermined thickness. Specifically, a low refractive index layer and a high refractive index layer are alternately stacked at a thickness of a quarter wavelength of light to be reflected on a base layer made of an oxide film or the like formed arbitrarily. Thereby, the light of the predetermined wavelength can be reflected with high efficiency.
As the insulating film, at least one oxide or nitride selected from the group consisting of Si, Ti, Zr, Nb, Ta, and Al can be used, and it can be formed by sputtering or CVD. For example, the low refractive index layer can be made of SiO ₂ and the high refractive index layer can be made of Nb ₂ O ₅ , TiO ₂ , ZrO _2, Ta ₂ O ₅ or the like. Specifically, (Nb ₂ O ₅ / SiO ₂ ) _n (n = 2 to 5) is listed in order from the base layer side.
The total film thickness of DBR can be about 0.2-1 μm.

(Light reflective molded body 41)
The light reflective molded body 41 is a silicone resin, a modified silicone resin, an epoxy resin, a modified epoxy resin, an acrylic resin, or a resin containing a reflective substance in a resin such as a hybrid resin containing at least one of these resins. It is preferable to use it.
As the material of the reflective substance, for example, titanium oxide, zinc oxide, silicon dioxide, titanium dioxide, zirconium dioxide, potassium titanate, alumina, aluminum nitride, boron nitride, mullite and the like can be used. The addition amount of the reflective substance can be adjusted in consideration of the light reflectance and the moldability of the resin material. For example, in the case of the relatively small light emitting device 11, it is necessary to reduce the thickness of the light reflective molded body 41, and in order to suppress light leakage at the thin portion, the amount of the reflective material added is increased. It is preferable to do this. On the other hand, since the moldability decreases as the amount of the reflective substance added increases, the amount added is appropriately adjusted in consideration of the moldability of the light reflective molded body 41. For example, when the concentration of the reflective material in the light reflective molded body 41 is about 30 wt% or more and the thickness of the light reflective molded body 41 is about 20 μm or more, the moldability can be maintained while preventing light leakage. .

<Light emitting device>
As described above, in the manufacturing method according to this embodiment, a thin and small light emitting device can be efficiently manufactured. As an example of the dimensional shape of the thin light emitting device, there is a rectangular parallelepiped light emitting device 11 as shown in FIG. 1, for example, when viewed from the light emitting surface side, the longitudinal dimension (dimension in the y direction) is about 1.0 to 4. 0.0 mm, dimensions in the lateral direction (dimension in the x direction) are about 0.1 to 0.5 mm, and dimensions in the depth direction (dimension in the z direction) are about 0.2 to 1.0 mm.
The side view type light emitting device has a light emitting surface substantially perpendicular to a mounting surface of the light emitting device, and can be suitably used as a light source for a backlight. However, the present invention is not limited thereto, and a top-view light-emitting device (a light-emitting device whose light-emitting surface is substantially parallel to the mounting surface of the light-emitting device) may be used, and a desired light-emitting device can be efficiently manufactured as appropriate. . The shape of the light-emitting device can be a desired shape depending on the intended use, in addition to a substantially rectangular parallelepiped and a substantially cube.

  As mentioned above, although some embodiment which concerns on this invention was illustrated, this invention is not limited to embodiment mentioned above, It cannot be overemphasized that it can be made arbitrary, unless it deviates from the summary of this invention. .

11, 12, 13, 14, 15 Light-emitting device 20 Light-emitting element 20a Upper surface 20c Side surface 23 Electrode 30 Phosphor-containing layer 30a Upper surface 30b Lower surface 30c Side surface 31 Phosphor layer 32 Transparent layer 35 Phosphor 40 Light reflecting member 41 Light reflecting molding Body 41a Upper surface 42 Reflective film 42a Upper surface 34 Liquid resin material 70 Mold die 80 Support substrate 80a Upper surface 81 Base 82 Wiring 90 Backlight 91 Light guide plate

Claims (4)

A light emitting element;
A phosphor-containing layer covering an upper surface of the light emitting element;
A light reflecting member that covers a side surface of the light emitting element and a side surface of the phosphor-containing layer,
The top surface of the phosphor-containing layer is a method of manufacturing a small light-emitting device than the lower surface of said phosphor-containing layer,
1) forming the phosphor-containing layer so that the lower surface of the phosphor-containing layer is within the upper surface of the light-emitting element in a top view;
2) At least a step of covering a side surface of the phosphor-containing layer and a side surface of the light emitting element with a light reflecting member;
3) The upper surface of the light reflecting member and the upper portion of the upper surface of the phosphor-containing layer are removed, and the upper surface of the phosphor-containing layer serving as a light emitting surface is exposed substantially flush with the upper surface of the light reflecting member. Process,
Including
The step 2) includes forming a reflection film that covers the side surface of the phosphor-containing layer and the side surface of the light emitting element, and a light reflective molded body that covers the reflection film.
A method for manufacturing a light-emitting device.   2. The method for manufacturing a light emitting device according to claim 1, wherein, in the step 2), the light reflecting member is formed so as to cover up to the upper side of the side surface of the phosphor-containing layer.   3. The light emission according to claim 1, wherein in the step 1), the phosphor-containing layer is formed by dropping a resin material containing a phosphor on the upper surface of the light emitting element and then curing the resin material. Device manufacturing method.   4. The step 1, further comprising: allowing the phosphor in the resin material to settle on the upper surface of the light emitting element after the resin material is dropped and before the resin material is cured. Method for manufacturing the light emitting device.

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