200903843 九、發明說明： 【發明所屬之技術領域】 ^本發明係關於一種混光型發光二極體，並且特別地，本發明 係關於一種使用螢光粉薄膜取代螢光粉膠之混光型發光二極體。 【先前技術 一一發光二極體多僅能輻射一定波長範圍的光線，原則上單—發 光=極體並無法產生白光。在先前技術中，藉由混合多種光線以 獲得，光，例如混合藍光、黃光即可獲得近似的白光。該多種光 線可，來自不同的發光二極體，或可能來自由單一發光二極體輻 ，之《卩分^始光線以及部分原始光線經螢光粉轉換的光線，亦可 自由單一發光二極體輻射之原始光線經不同的螢光粉轉換的200903843 IX. Description of the Invention: [Technical Field] The present invention relates to a light-mixing type light-emitting diode, and in particular, the present invention relates to a light-mixing type using a phosphor powder film instead of a fluorescent powder Light-emitting diode. [Prior Art] A light-emitting diode can only radiate light of a certain wavelength range. In principle, single-lighting = polar body cannot produce white light. In the prior art, approximate white light is obtained by mixing a plurality of rays to obtain light, for example, mixing blue light and yellow light. The plurality of light rays may be from different light emitting diodes, or may be derived from a single light emitting diode, and the light that is converted by the fluorescent light and the part of the original light by the fluorescent powder may also be free from a single light emitting diode. The original light of the body radiation is converted by different phosphors
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一種發光二極體，有效控制螢光粉層 200903843 【發明内容】 *本發明之一範疇在於提供一種混光型發光二極體，使用勞光 粉薄膜取代螢光粉膠’並且反射電極與發光半導體結構間有一間 隙。 本發明之另一範疇在於提供一種混光型發光二極體，在基板 與發光半導體結構間有螢光粉層，並且可在發光半導體結構之上 形成選擇性反射層。Light-emitting diode, effective control of phosphor powder layer 200093843 [Invention] [1] One aspect of the present invention is to provide a light-mixing type light-emitting diode, which uses a light-powder powder film instead of a fluorescent powder gel and a reflective electrode and a light-emitting layer There is a gap between the semiconductor structures. Another aspect of the present invention is to provide a light-mixing type light-emitting diode having a phosphor layer between a substrate and a light-emitting semiconductor structure, and a selective reflection layer can be formed over the light-emitting semiconductor structure.
本發明之另一範疇在於提供一種混光型發光二極體，僅在發 光半導體結構下方與載台間塗佈螢光粉膠。 X 本發明之混光型發光二極體包含一透光基板、一發光半導體 結構、一反射電極以及一第一螢光粉層。該透光基板具有一第— 表面，，與該第一表面相對之一第二表面。該發光半導體結構形 成於該第一表面上。該反射電極位於該發光半導體結構之上且與 該發光半導體結構間有一間隙，其中該反射電極與該發光半導體 結構電性連接。該第一螢光粉層形成於該第二表面上。 因此，該發光半導體結構輻射之一光線被該反射電極反射而 向該透光基板以及該第-螢光粉層行進。部分光線將被該第一榮 光叔層轉換’被轉換的光線再與未被轉換的光線混合。另外，該 反射電極未直接與該發光轉體結構連接，可避免或減少該發光 半導體結發耕難生讀_發辭導縣獻該反射電 極產生因熱脹冷縮*衍生的問題。例如該空隙可容許該發光半導 體結構及該反射電極獅以減少擠壓^產生缺陷之機會。 此外，該m祕可填充-單層介電賊―多層介，可加 強該發光半導體結構間之附著，或可提供繞射效應 質可由數種不同的介電質構成。該 奶光錄-n亦可進-步包含—第二螢光粉層，形成於該發 200903843 ί半導體結構與該反射電極之間。該第二螢光粉層亦可填充該間 導體t明型發光二極體包含—透光基板、-發光半 i if 螢光粉層以及—反射電極。該透光基板具有: Ιίίϊίΐ第—表面相對之—第二表面。該發光半導體結 。該第光粉層形成於該發光半導體結 射於該第—螢光粉層之上且與該第-螢光粉層 4有間隙，其中该反射電極與該發光半導體結構電性連接。 後，體結構輻射之—光線穿驗第—螢光粉層 ϊ 電極反射而向該第—粉私及誠光基板行 ί二:，將被該第一螢光粉層轉換，被轉換的光線再與未被 隙亦可填充—單声第—螢光粉層間之該間 “一i電戈一夕層介電質’可加強該反射電極與 ^ #先私層間之附著’或可提供繞射效應以提高反射效果。 ，夕層介電質可由數種不同的介電質構成。此外，該發光二極體 亦可進-步包含n光粉層’形成於該縣基板之該第二表 面上。 本發明之另一混光型發光二極體包含一載台、一發光半導體 結構以及-透絲板。該發光半導體結構設置於該載台之上且盘 該載台間有-_ ’其中該發光半導體結構與該載台電性連接。 該透光基板餘辭導贿構上。此外， 於該發光半導體結構正下方之該間隙。 $ ^ 、因此’該發光半導體結構輻射之—親穿越錄光粉膠後， 被該載台反射而向_光基板行進。部分光線將被該勞光粉膠轉 換，被轉換的光線再與未被轉換的光線混合。此外，該載台可具 有-反射層以加強反射效果，而該發光半導體結構麟置於該反 射層之上。另外’該發光二極體可進—步包含—t光粉層，形成 200903843 於該透光基板上。 另外，該混光型發光二極體進一步句人— ϊίΐϋ!好層介電質可由數種不同的介i質構成。該發光 而向 榮光粉膠轉換。藉此7可增^ 積 本發明之另-混光型發光二極體包含—載台、— ΐ載2光以及—透光基板。該第—榮光粉層形成^ ί載it 光半導體結構設置於該第i光粉層之上且與該 ^榮ίίϊΐ有—間隙’其中該發光半導體結構與該載台電性 連接。忒透光基板位於該發光半導體結構上。 / 因發辭導體結難射之—光線穿越該第—螢光粉層 後’被1^。反射而㈣透光基板行進。部分光線將被該第 光粉層轉換’被轉㈣光線再與未被轉換的光線混合。此外，該 載台可具#-反射相加強反射，碰第—縣漏卿成於^ 反射層上。於一具體實施例中，該發光二極體可進一步包含一 二螢光粉層，形成於該透光基板上。 另夕γ η亥此光型發光二極體進一步包含一選擇性反射層形成 於該透光基板之上。該選擇性反射層得以一單層介電質或一多層 介電質形成。該多層介電質可由數種不同的介電質構成^該發& 半導體結構輻射之另—光線之—部分被該選擇性反射層反射而向 ^透光基板以及該第一螢光粉層行進。被反射的光線之後亦將如 前述光線，部分被該第一螢光粉層轉換。藉此，可增加被轉換光 線的比例，進而達到調節混合光線的色溫等Cffi座標值。此外， 200903843 =擇性反射層包含-通孔或遮罩，以控綱擇性反 面積。 本發明之另一混光型發光二極體包含一透光基板、一發 導體結構、-選擇性反射層以及一螢光粉層。該透光基板^ 第-表面以及與該第-表面相狀—第二表面。該發光半g體结 構形成於該第-表社。該選擇性反射層位於該發光半導體结^ 上。該勞光粉層形成於該第二表面上。該選擇性反射層得以二 層介電質或-多層介電質形成。該多層介電質可由數種不同的介 雷暫描:七。 因此，該發光半導體結構輻射之一光線之一部分被該選擇性 反射層反射而向該透光基板以及該螢光粉層行進。此外，該選择 =反射層包含一通孔或一圖形遮罩，以控制選擇性反射的面積。 藉此，可增加被轉換光線的比例，進而達到調節混合光線的色溫 等CIE座標值。另外，於實際應用中，承載該混光型發光二極體 之載台可視需要形成一反射層，以反射朝向該載台行進的光線。 本發明之另一混光型發光二極體包含一基板、一第一螢光粉 層以及了發光半導體結構。該第一螢光粉層形成於該基板上。該 發光半導體結構形成於該第一螢光粉層上。於一具體實施例中， δ亥發光半導體結構之上可先形成一選擇性反射層，再於該選擇性 反射層上形成一第二螢光粉層。同樣地，於另一具體實施例，該 發光半導體結構之上可再形成一第三螢光粉層。該第三螢光粉層 上可再形成一選擇性反射層。 因此，由該發光半導體結構輻射之一光線將被該選擇性反射 層選擇性地反射以及被該等螢光粉層部分地轉換。被轉換的光線 與未被轉換的光線混合以形成所需的光線。補充說明，該混光型 發光二極體之基板不以透明為必要。另外，光線轉換以及光線路 徑之主要說明同前述，在此不再贅述。該選擇性反射層得以一單 200903843 層ί電質或一多層介電質形成。該多層介電質可由數種不同的介 電質構成。該選擇性反射層包含一通孔或一圖形遮罩，以^^制選 擇性反射的面積。 工 、>、、知上所述，根據本發明，該螢光粉層係可直接形成於該發光 半導體結構或該透光基板上，且可於半導體製程中完成以有效達 ^控制混光的目的。此外，該反射電極與該發光半導體結構電性 f ’但之間有-職，可避免若該反射電極與該發光半導體結 ^接接觸_生的介面問題。另外，於包含該載台之該混光型 ίί一極體巾’該螢光粉制可形成於該載台上，同樣能避免傳 、、^1%因以螢光粉膠封裝方式而造成混光控制不易的問題。於僅 2 之該混光型發光二極體中’該螢光粉膠僅填充於該 ^甘社構正下方之該贿，可有效控職光粉膠的使用量 ^刀布，進而亦控制了混光效果。更進一步地，利用選擇性反 ίϊίϊ加被轉換光線的量，以達到控制混細效果。並且，選 亦可包含複數個通孔或由幾何形狀形細形的遮罩， 二控制混光的效果。根據本發日狀混光型發光二極體，先 别技術的缺點均已獲得解決或減輕其影響程度。 式得點與精神可以藉由以下的發，述及所附圖 【實施方式】 之混極明之第一較佳具體實施例 18。透絲反魏極16減第―勞光粉層 第二表面124。發光半J體H122以及與第一表® 122相對之 電極16位於發*半導诚於第—表面122上。反射 存有間隙，其中^^；^4之上且與發光半導體結構Μ間 、 射電極16以導體162與發光半導體結構14 200903843 電性連接。苐一螢光粉層18形成於第二表面124上。 因此，發光半導體結構14輻射之光線u被反射電極16反 射而向透光基板12以及第一螢光粉層18行進(以空心箭頭表 不）。部分的光線L1將被第-營光粉層18轉換，被轉換的光線 L12再與未被轉換的光線U4混合。糾，反射雜16未直接 與發光半導體結構Μ連接’可避免或減少發光半導體結構14於 發光時產生之熱對發光半導體結構14及反射電極16產生埶脹冷 縮而衍生關題。例如空隙G1可容許發料導縣構14及反射 電極16變形以減少擠壓產生缺陷之機會。 一此外，間隙G1亦可填充一單層介電質或一多層介電質(未繪 示於圖一中）。該等介電質可加強反射電極16與發光半導體結構 Μ間之附著，或可提供繞射效應(例如布拉格繞射鏡)以提高反射 效果。該多層介電質可由數種不同的介電質構成。糾，混光型 發光二極體1亦可進一步包含第二螢光粉層，形成於發光半導體 結構14與反射電極^之間沐繪示於圖一中卜亦即光線^在被 反^之則即有部分已被第二螢光粉層轉換，藉此螢光粉層的厚度 邏輯上增加了，有助於控制混光效果。補充說明的是，第一螢光 粉層18以及第二螢光粉層可併入發光半導體結構14及透光基板 12之製程以黃光微影形成。 補充說明，前述說明僅指出發光半導體結構14朝向反射電 極16輻射之光線L1之路徑，發光半導體結構14當然亦輻射直 接朝，透光基板12以及第一螢光粉層18之光線，此光線亦將部 分被第一螢光粉層18轉換，並與前述的被轉換的光線Ε12以及 未，轉換的光線L14混合。另外，混光型發光二極體丨並不限於 覆晶式(flip chip)封裝應用。於實際應用中，承載混光型發光二極 體1之載台可視需要形成一反射層，以反射朝向載台行進的光 線。 11 200903843 之混據本發日狀第二較佳具體實施例 基㈣、=半光型發光二極體3包含透光 及第二嶋二體忒=射 广綱層心 *S 322 324 〇 ^ξ^ΙΖΖΤΐ 面322上。第-榮光粉層38形 =开^於弟二表 螢光粉層40形成於第二表面結構34上。第二 粉層38之上且*第—料# ^射電極36位於第一螢光 , ” 愛光私層38間存有間隙G3，1中反射雷 極36以導體362與發光半導體結構％電性連接。〃 t反射電 因此，發光轉體結構Μ輻射之光線u經 y 4於被反射電極36反射之後，將再次經過第—螢光粉芦 換’仍轉換的光、線U4將被第—榮光粉層38 ^ ，。仍未被轉換的光、缘L344於經過第二勞光粉層4〇時，將 土的未被轉換的光'線L344被第二勞光粉層*轉換。最後：所& 未破轉換的光線L3444以及被轉換的光線U2、L;342、⑼似將 混合以產生所需的光線，此包含由發辭物結構Μ 但未 f K, ϋϊΐΪ/ί反射而直接經過第二螢光粉4G之被轉換的和未被 ，„線(未_於圖二中）。所需的混絲侧可藉由控制榮 光粉的浪度及螢光粉層的厚度來獲得。 補充說明的是，根據前述關於第二較佳具體實施例之描述， 係以第-螢光粉層38與第二螢光粉層4〇相同為前提。但本發明 不以此為限。當第-營光粉層38與第二營光粉層4〇不同時，光 線轉換程序將較為複雜。基本上混合的光線包含被第一螢光粉層 38轉換的光線、被第二螢光粉層4〇轉換的光線以及由發光半導 體結構34輻射出但未被轉換的光線。再補充說明的是，前述說 明同樣適用於第一較佳具體實施例。另外，第一螢光粉層％以 及第二螢光粉層40可併入發光半導體結構34及透光基& 32之 製程以黃光微影形成。 12 200903843 根據第一較佳具體實施例，間隙G3亦可填充一單層介 ^-多層(树示於圖二巾）。該等介可加強 極 36與第-螢光粉層38間之附著，或可提供繞射效應以提高二 s二數種不同的介電質構成。另外，關於發 ，，不再費述。並且，混光型發光二極體ί之=說= 第一較佳具體實施例之混光型發光二極體丨，亦不再贅述。 凊參閱圖二A，圖三a係繪示根據本發明之第三較佳具體實 把例之混光型發光二極體5之示意圖。混光型發光二極體5包含 透光基板52、發光轉體結構54、載台56、螢光粉膠％以及 光粉層60。發光半導體結構54設置於載台允之上且與載台％ 間有間隙G5，其中發光半導體結構54以凸塊542與載台兄電 性連接。透光基板52位於發光半導體結構54上。榮光粉膝％ 僅填充於發光半導體結構54正下方之間隙G5。此舉除了減少並 且控制螢光粉膠58的使用量’並且更進—步地控制混光的效 果。此外，螢光粉層60形成於透光基板52上。 因此發光半導體結構54輻射之光線L5穿越螢光粉勝58 後，被載台56反射而向透光基板52行進。部分光線u將被該 螢光粉膠58或螢光粉層60轉換，被轉換的光線L52再與未被轉 換的光線L54混合以產生所需的光線。光線轉換的細節已如前 述，在此不再贅述。此外，載台56可具有反射層562以加強反 射效果，而發光半導體結構54則設置於反射層562之上。補充 說明的是，螢光粉層60可併入發光半導體結構54及透光基板52 之製程以黃光微影形成。 請參閱圖三B，圖三B係繪示本發明之根據一具體實施例之 /昆光型發光一極體5之示意圖。與第三較佳具體實施例之混光型 發光一極體5相較，混光型發光二極體5’進一步包含選擇性反射 層62形成於透光基板52之上。選擇性反射層62得以一單層介 13 200903843 電其或一多層介電質形成。該多層介電質可由數種不同的介電質 構成。由發光半導體結構54朝向透光基板52輻射之光線L6，僅 部分光線L62可穿過選擇性反射層62 ’其他的則被選擇性反射層 62反射。被容許穿過的光線L62其波長範圍係由選擇性反射層 62之特性決定。被反射的光線L64之後亦將如第三較佳具體實施 例所述之光線L5 ’部分被螢光粉膠58轉換。藉此，可增加被轉 換光線的比例，進而達到調節混合光線的色溫等C1E座標值。例 如，在白光發光二極體中，增加黃光比例，使得混合後的白光看 起來更為自然。另外，選擇性反射層62其上可形成複數個通孔 或由幾何形狀形成圖形的遮罩以作為調節選擇性反射的面積，亦 可作為控制混光比例的手段。其中，該等通孔的截面不以圓形為 限’且該等通孔亦可為狹缝或其他幾何形狀。補充說明，第三較 佳具體實施例之混光型發光二極體5尚包含一螢光粉層6〇，因此 混光型發光二極體5,之選擇性反射層62亦可形成於螢光粉層6〇 上，不待贅述。 曰Another aspect of the present invention is to provide a light-mixing type light-emitting diode in which a phosphor powder is applied only between the stage and the stage under the light-emitting semiconductor structure. X The light-mixing light-emitting diode of the present invention comprises a light-transmitting substrate, a light-emitting semiconductor structure, a reflective electrode and a first phosphor layer. The light transmissive substrate has a first surface and a second surface opposite the first surface. The light emitting semiconductor structure is formed on the first surface. The reflective electrode is located above the light emitting semiconductor structure and has a gap with the light emitting semiconductor structure, wherein the reflective electrode is electrically connected to the light emitting semiconductor structure. The first phosphor layer is formed on the second surface. Therefore, one of the radiation of the light-emitting semiconductor structure is reflected by the reflective electrode and travels toward the light-transmitting substrate and the first phosphor powder layer. Part of the light will be converted by the first uncle layer. The converted light is then mixed with the unconverted light. In addition, the reflective electrode is not directly connected to the illuminating body structure, and the illuminating semiconductor junction can be avoided or reduced. The problem arises from the fact that the reflecting electrode is caused by thermal expansion and contraction*. For example, the void can permit the luminescent semiconductor structure and the reflective electrode lion to reduce the chance of squeezing defects. In addition, the m-secret can be filled-single-layer dielectric thief-multilayer dielectric, which can enhance the adhesion between the light-emitting semiconductor structures, or can provide a diffraction effect that can be composed of several different dielectric materials. The milk photo-n may further comprise a second phosphor layer formed between the semiconductor structure and the reflective electrode. The second phosphor layer may also fill the inter-conductor t-type light-emitting diode comprising a light-transmitting substrate, a light-emitting half-if phosphor layer, and a reflective electrode. The light transmissive substrate has: Ι ϊ ϊ ϊ ΐ ΐ 表面 表面 表面 表面 表面 表面 表面 第二 第二 第二The light emitting semiconductor junction. The photo-powder layer is formed on the first phosphor powder layer and has a gap with the first phosphor powder layer 4, wherein the reflective electrode is electrically connected to the light-emitting semiconductor structure. After the body structure radiation - the light wears the first - the phosphor layer ϊ the electrode reflects to the first powder and the honest light substrate ί 2: will be converted by the first phosphor layer, the converted light It can also be filled with no gaps - the "one-electron-type dielectric" between the layers of the mono-fluorescent powder can enhance the adhesion between the reflective electrode and the first private layer or provide diffraction The effect is to improve the reflection effect. The dielectric layer may be composed of several different dielectric materials. In addition, the light-emitting diode may further comprise an n-light powder layer formed on the second surface of the substrate of the county. The other light-mixing light-emitting diode of the present invention comprises a stage, a light-emitting semiconductor structure and a light-transmitting plate. The light-emitting semiconductor structure is disposed on the stage and has a -_ ' between the stages. The light-emitting semiconductor structure is electrically connected to the stage. The light-transmissive substrate is embossed. In addition, the gap is directly under the light-emitting semiconductor structure. [ ^, thus the radiation semiconductor structure radiates - pro-crossing After the recording powder is glued, it is reflected by the stage and is directed to the _ light substrate. Part of the light will be converted by the plaster, and the converted light will be mixed with the unconverted light. In addition, the stage may have a reflective layer to enhance the reflection effect, and the light emitting semiconductor structure is placed on the reflection Above the layer. In addition, the light-emitting diode can further include a -t light powder layer to form 200903843 on the light-transmissive substrate. In addition, the light-mixing light-emitting diode further satisfies - ϊίΐϋ! The electric quantity can be composed of several different dielectric materials, and the illuminating is converted to glory powder rubber, thereby increasing the sum of the other-light-mixing type light-emitting diode of the present invention, including the carrier, the ΐ-loading light And a light-transmissive substrate. The first glory powder layer is formed on the ith light-powder layer and is provided with the gap Between the light-emitting semiconductor structure and the stage electrical property忒 忒 忒 忒 忒 忒 / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / The light powder layer conversion 'is turned (four) light again In addition, the stage may have a #-reflective phase enhanced reflection, and the first stage may be formed on the reflective layer. In a specific embodiment, the light emitting diode may further comprise a phosphor powder layer is formed on the light-transmissive substrate. The light-emitting diode further includes a selective reflection layer formed on the light-transmissive substrate. Forming a single layer of dielectric or a multilayer dielectric. The multilayer dielectric can be composed of several different dielectrics. The radiation of the semiconductor structure is partially reflected by the selective reflective layer. And traveling toward the transparent substrate and the first phosphor layer. The reflected light will also be partially converted by the first phosphor layer as the light, thereby increasing the proportion of the converted light. The Cffi coordinate value such as the color temperature of the mixed light is adjusted. In addition, 200903843 = Selective reflective layer contains - through holes or masks to control the selective inverse area. Another light-mixing type light-emitting diode of the present invention comprises a light-transmitting substrate, a hair-conducting structure, a selective reflection layer and a phosphor powder layer. The transparent substrate has a first surface and a second surface that is opposite to the first surface. The luminescent semi-g body structure is formed in the first-form. The selective reflection layer is located on the light emitting semiconductor junction. The working powder layer is formed on the second surface. The selective reflective layer is formed of a two-layer dielectric or a multi-layer dielectric. The multilayer dielectric can be temporarily described by several different mediators: Therefore, a portion of one of the rays of the light emitting semiconductor structure is reflected by the selective reflective layer to travel toward the light transmissive substrate and the phosphor layer. In addition, the selection = reflective layer includes a via or a patterned mask to control the area of selective reflection. Thereby, the proportion of the converted light can be increased, and the CIE coordinate value such as the color temperature of the mixed light can be adjusted. In addition, in practical applications, the stage carrying the light-mixing type light-emitting diode may form a reflective layer to reflect light traveling toward the stage. Another light-mixing type light-emitting diode of the present invention comprises a substrate, a first phosphor layer and a light-emitting semiconductor structure. The first phosphor layer is formed on the substrate. The light emitting semiconductor structure is formed on the first phosphor layer. In a specific embodiment, a selective reflective layer may be formed on the δ-Huang semiconductor structure, and a second phosphor layer is formed on the selective reflective layer. Similarly, in another embodiment, a third phosphor layer can be further formed on the light emitting semiconductor structure. A selective reflection layer may be further formed on the third phosphor layer. Thus, one of the rays radiated by the light emitting semiconductor structure will be selectively reflected by the selective reflective layer and partially converted by the phosphor layers. The converted light is mixed with the unconverted light to form the desired light. It should be noted that the substrate of the light-integrating light-emitting diode is not required to be transparent. In addition, the main descriptions of the light conversion and the optical path are the same as those described above, and are not described herein again. The selective reflection layer can be formed by a single layer of 200903843 or a multilayer dielectric. The multilayer dielectric can be composed of several different dielectrics. The selective reflective layer includes a via or a patterned mask to selectively illuminate the area. According to the present invention, the phosphor layer can be directly formed on the light emitting semiconductor structure or the light transmissive substrate, and can be completed in the semiconductor process to effectively control the light mixing. the goal of. In addition, the reflective electrode and the light-emitting semiconductor structure have electrical functions, but there is a problem in that the reflective electrode and the light-emitting semiconductor are in contact with each other. In addition, the phosphor powder can be formed on the stage in the light-mixing type OLED including the stage, and the transmission can be prevented, and the 1% is caused by the phosphor powder packaging method. The problem of mixed light control is not easy. In only 2 of the light-mixing light-emitting diodes, the fluorescent powder is only filled in the bribe below the body of the Gansu society, which can effectively control the amount of the use of the toner powder, and then control The light mixing effect. Further, the amount of converted light is selectively applied to achieve a controlled blending effect. Moreover, the selection may also include a plurality of through holes or a mask having a geometric shape and a fine shape, and the effect of mixing light is controlled. According to the present Japanese-style mixed light-emitting diode, the disadvantages of the prior art have been solved or reduced. The point and spirit of the present invention can be explained by the following description of the first preferred embodiment 18 of the accompanying drawings. Translucent anti-Wei pole 16 minus the first - the light powder layer second surface 124. The illuminating half J body H122 and the electrode 16 opposite the first watch® 122 are located on the first surface 122. There is a gap between the reflection and the light-emitting semiconductor structure, and the emitter electrode 16 is electrically connected to the light-emitting semiconductor structure 14 200903843 by the conductor 162. A phosphor layer 18 is formed on the second surface 124. Therefore, the light u radiated from the light-emitting semiconductor structure 14 is reflected by the reflective electrode 16 to travel toward the light-transmitting substrate 12 and the first phosphor layer 18 (indicated by a hollow arrow). Part of the light L1 will be converted by the first camp light layer 18, and the converted light L12 is mixed with the unconverted light U4. The correction, the reflection of the impurity 16 is not directly connected to the light-emitting semiconductor structure, and the heat generated by the light-emitting semiconductor structure 14 during light emission is prevented or reduced, and the heat-emitting semiconductor structure 14 and the reflective electrode 16 are expanded and contracted. For example, the gap G1 can allow the hairline guide 14 and the reflective electrode 16 to be deformed to reduce the chance of extrusion causing defects. In addition, the gap G1 may also be filled with a single layer of dielectric or a multilayer dielectric (not shown in Figure 1). The dielectrics may enhance adhesion between the reflective electrode 16 and the light emitting semiconductor structure, or may provide a diffractive effect (e.g., a Bragg mirror) to enhance the reflective effect. The multilayer dielectric can be composed of several different dielectrics. The light-mixing light-emitting diode 1 may further comprise a second phosphor layer formed between the light-emitting semiconductor structure 14 and the reflective electrode ^, which is shown in FIG. That is, a portion has been converted by the second phosphor layer, whereby the thickness of the phosphor layer is logically increased to help control the light mixing effect. It is to be noted that the process in which the first phosphor layer 18 and the second phosphor layer can be incorporated into the light emitting semiconductor structure 14 and the transparent substrate 12 is formed by yellow light lithography. In addition, the foregoing description only points out the path of the light-emitting semiconductor structure 14 to the light L1 radiated toward the reflective electrode 16. The light-emitting semiconductor structure 14 of course radiates light directly toward the transparent substrate 12 and the first phosphor layer 18, and the light is also A portion is converted by the first phosphor layer 18 and mixed with the aforementioned converted pupils 12 and the unconverted rays L14. In addition, the light-mixing type light-emitting diode is not limited to a flip chip package application. In practical applications, the stage carrying the light-mixing type light-emitting diode 1 may form a reflective layer to reflect the light traveling toward the stage. 11 200903843 The second preferred embodiment of the present invention is based on the second preferred embodiment (4), = semi-light-emitting diode 3 comprising light transmission and second 嶋 two-body 忒 = 射广纲层*S 322 324 〇 ^ ξ^ΙΖΖΤΐ Face 322. The first glory powder layer 38 is formed on the second surface structure 34. Above the second powder layer 38 and the *th material #^ emitter electrode 36 is located in the first fluorescent light, "the gap between the love light private layer 38 is G3, and the reflection of the lightning pole 36 in the conductor 362 and the light emitting semiconductor structure is electrically 〃t reflected electricity, therefore, the illuminating structure of the illuminating structure Μ after being reflected by the reflecting electrode 36 via y 4 , will be replaced by the first fluorescent powder, the light still converted, the line U4 will be the first The glory powder layer 38 ^ , the still unconverted light, the edge L344 is passed through the second layer of the lacquer layer 4, and the unconverted light 'line L344 of the soil is converted by the second layer of lacquer powder*. : & unbroken light L3444 and the converted light U2, L; 342, (9) will appear to be mixed to produce the desired light, which consists of the structure of the utterance but not f K, ϋϊΐΪ / ί The converted sum that is directly passed through the second phosphor powder 4G is not, „line (not _ in Fig. 2). The desired side of the blend can be obtained by controlling the glare of the glaze and the thickness of the phosphor layer. It is to be noted that, based on the foregoing description of the second preferred embodiment, the first phosphor powder layer 38 is identical to the second phosphor layer 4A. However, the invention is not limited thereto. When the first camp light powder layer 38 is different from the second camp light powder layer 4, the light conversion process will be more complicated. The substantially mixed light comprises light converted by the first phosphor layer 38, light converted by the second phosphor layer 4, and light radiated by the light-emitting semiconductor structure 34 but not converted. It is further added that the foregoing description is equally applicable to the first preferred embodiment. In addition, the first phosphor layer % and the second phosphor layer 40 may be incorporated into the light emitting semiconductor structure 34 and the light transmissive substrate & 32 process to form a yellow light lithography. 12 200903843 According to a first preferred embodiment, the gap G3 can also be filled with a single layer of multi-layer (shown in Figure 2). These may enhance the adhesion between the pole 36 and the first phosphor powder layer 38, or may provide a diffractive effect to increase the composition of two different dielectrics. In addition, regarding the issue, it will not be mentioned. Further, the light-mixing type light-emitting diode ί=== the light-mixing type light-emitting diode of the first preferred embodiment will not be described again. Referring to Fig. 2A, Fig. 3a is a schematic view showing a light-mixing type light-emitting diode 5 according to a third preferred embodiment of the present invention. The light-mixing type light-emitting diode 5 includes a light-transmitting substrate 52, a light-emitting rotating body structure 54, a stage 56, a phosphor powder%, and a toner layer 60. The light emitting semiconductor structure 54 is disposed on the carrier and has a gap G5 with the carrier, wherein the light emitting semiconductor structure 54 is electrically connected to the carrier by the bumps 542. The light transmissive substrate 52 is located on the light emitting semiconductor structure 54. The glory powder knee % is only filled in the gap G5 directly below the light emitting semiconductor structure 54. This is done in addition to reducing and controlling the amount of phosphor powder 58 used and more closely controlling the effect of the light mixing. Further, a phosphor layer 60 is formed on the light-transmitting substrate 52. Therefore, the light beam L5 radiated from the light-emitting semiconductor structure 54 passes through the phosphor powder 58 and is reflected by the stage 56 to travel toward the light-transmitting substrate 52. Part of the light u will be converted by the phosphor powder 58 or the phosphor layer 60, and the converted light L52 is mixed with the unconverted light L54 to produce the desired light. The details of the light conversion have been as described above and will not be described here. In addition, the stage 56 can have a reflective layer 562 to enhance the reflective effect, while the light emitting semiconductor structure 54 is disposed over the reflective layer 562. It is additionally noted that the process in which the phosphor layer 60 can be incorporated into the light emitting semiconductor structure 54 and the transparent substrate 52 is formed by yellow light lithography. Referring to FIG. 3B, FIG. 3B is a schematic diagram of a light-emitting body 5 according to an embodiment of the present invention. The light-mixing type light-emitting diode 5' further includes a selective reflection layer 62 formed on the light-transmitting substrate 52 as compared with the light-mixing type light-emitting body 5 of the third preferred embodiment. The selective reflective layer 62 is formed by a single layer of dielectric or a multilayer dielectric. The multilayer dielectric can be composed of several different dielectric materials. The light ray L6 radiated from the light-emitting semiconductor structure 54 toward the light-transmitting substrate 52, only part of the light ray L62 can pass through the selective reflection layer 62' and the other is reflected by the selective reflection layer 62. The wavelength of the light ray L62 that is allowed to pass is determined by the characteristics of the selective reflection layer 62. The reflected light L64 is also converted by the phosphor powder 58 as part of the light L5' as described in the third preferred embodiment. Thereby, the proportion of the converted light can be increased, and the C1E coordinate value such as the color temperature of the mixed light can be adjusted. For example, in a white light emitting diode, the proportion of yellow light is increased, so that the white light after mixing is more natural. Further, the selective reflection layer 62 may be formed with a plurality of through holes or a mask formed by a geometric shape as an area for adjusting the selective reflection, and as a means for controlling the light mixing ratio. Wherein, the cross-sections of the through holes are not limited to a circle' and the through holes may also be slits or other geometric shapes. It is to be noted that the light-mixing light-emitting diode 5 of the third preferred embodiment further includes a phosphor layer 6〇, so that the selective light-reflecting layer 62 of the light-mixing light-emitting diode 5 can also be formed in the firefly. The layer of light powder 6 is not mentioned here.曰
請參閱圖四A，圖四A係繪示根據本發明之第四較佳具體實 加例之光型發光一極體7之示意圖。發光二極體7包含透光基 板72、發光半導體結構74、載台76、第一螢光粉層78以及第二 螢光粉層80。第一螢光粉層78形成於載台76上。發光半導體結 構74 ax置於弟一螢光粉層78之上且與第一螢光粉層78間存有 間隙G7 ’其中發光半導體結構74以凸塊742與載台76電性連 接。透光基板72位於發光半導體結構74上。第二螢光粉芦8〇 形成於透光基板72上。 因此，發光半導體結構74輻射之光線L7穿越第一螢光粉層 78後’被載台76反射而向透光基板72行進。部分光線L7 ^ 第一螢光粉層78或第二螢光粉層80轉換，被轉換的光線L72 與未被轉換的光線L74混合以產生所需的光線。光線轉換的 已如前述，在此不再贅述。此外，載台76可具有反射層 加強反射，而第一螢光粉層78則形成於反射層？62上。補充說 14 200903843 明的是’第二螢光粉層80可併入發光半導體結構74及透光基板 72之製程以黃光微影形成。 、，凊參閱圖四B，圖四B係繪示根據一具體實施例之混光型發 光二極體7,之示意圖。與第四較佳具體實施例之混光型發光二極 體7相較，混光型發光二極體T進一步包含選擇性反射層82形成 於透光基板72之上。選擇性反射層82得以一單層介電質或一多 層w電質开>成。該多層介電質可由數種不同的介電質構成。由發 光半導體結構74朝向透光基板72輕射之=分= L82可牙過選擇性反射層82，其他的則被選擇性反射層反 射。被容許穿過的光線L82其波長範圍係由選擇性反射層82之 特〖生决疋。被反射的光線L84之後亦將如第四較佳且體實施例戶斤 述之光線L7(如圖四A所示），部分被第—^層 此’、可增加被轉換光線的比例。另外，選擇性反射層82豆上可 形成複數俩孔或域何雜職_的遮如作為靖g擇性 反射的面積，亦可作為控制混光比例的手段。1 充說月，第四較佳具體實施例之混光型發光二極體7尚包含一 歧細航二減7,之選雛反㈣82亦可形 成於螢光粉層80上，不待贅述。 請參閱圖五，圖五係繪示根據本發明第 Ϊ " 96 ^ ^ 曰 透光基板92具有第一表面922以及盘第一矣；Q99 士 之第二表面924。發光半導體結構94形成於第 】 成於f光料體結構94上=== 層介電質形成。該多層介電質可由數種不同的介電^構成^夕 因此’發光半導體結構94輻射之一光線U被選擇性反射層 15 200903843 96部分反射而向透光基板92以及螢光粉層98行進。被 的光線L92其波長範圍係由選擇性反射層％之特性決 身^光線L94將被螢光粉層98部分轉換，其轉換機制已如J ^，不再贅述。此外’選擇性反射層96可包含複數個通 幾何形狀形成圖形的遮罩，以控制選擇性反射的 ^ 孔=面亥等通孔亦可為狹縫或其他幾； 也狀。精此，可增加被轉換光線的比例，進而達 的色溫等OE座標值。另外，關於發光半導體結構94之^= 徑之補充說明，與第一較佳具體實施例相同，不再 :光=體i 第^佳具體實施例之混 先孓么先一極體1，亦不再贅述。例如，第五較佳且 混光型發光二滅9以面朝上(faee up)#_裝時 發光二極體9之載台其表面可形成一反射層4:強 L94) j 被令許牙過的先線L92混合’以形成所需的光線。 請參閱圖六A’圖六A係緣示根據本發明之第六較 ^狀混光型發光二極體2之示意圖。混光型發光二極體包含 基板22、螢光粉層26以及發光半導體結構24。勞光粉声 成於基板22上。發光轉體結構24形成於$光粉層▲ -步地’發光半導體結構24之上可再形成另—螢光粉層28，^ 且螢光粉層28上可再形成選擇性反射層29。 a w 因此，由發光半導體結構24輻射朝向選擇性反射声2 線’無論是否被螢光粉層28轉換，均將被選擇性反^選 先線牙過錄將被反射’因此有可驗轉換 性反射層29，而未被轉換的光線則否。此 計而定。被反射的光線將再被營光粉層26、28 產= 此被反射的光線之後將再次被·性反射層29選 16 200903843 最後通過選擇性反射層29的光線混合成所需的光線。 另外，選擇性反射層29可包含複數個通孔或由幾何形狀形 成圖形的遮罩，以控制選擇性反射的面積。其中，該等通^的^ 面不以圓形為限，且該等通孔亦可為狹縫或其他幾何形狀。藉 此’可增加被轉換光線的比例。選擇性反射層29得以二單層^ 電質或一多層介電質形成。該多層介電質可由數種不同的介士^ 構成。此外，光線轉換以及光線路徑之主要說明同前述，在此不 再贅述。 請參閱圖六B，圖六B係繪示根據一具體實施例之混光型發 光二極體2’之示意圖。與第六較佳具體實施例比較，混光型^ 二極體2’之螢光粉層28係位於選擇性反射層29之上。因此，X通Referring to FIG. 4A, FIG. 4A is a schematic view showing a light-type light-emitting diode 7 according to a fourth preferred embodiment of the present invention. The light-emitting diode 7 includes a light-transmitting substrate 72, a light-emitting semiconductor structure 74, a stage 76, a first phosphor layer 78, and a second phosphor layer 80. The first phosphor layer 78 is formed on the stage 76. The light emitting semiconductor structure 74 ax is disposed on the phosphor layer 78 and has a gap G7 between the first phosphor layer 78. The light emitting semiconductor structure 74 is electrically connected to the carrier 76 by bumps 742. The light transmissive substrate 72 is located on the light emitting semiconductor structure 74. The second phosphor powder 8 is formed on the light-transmitting substrate 72. Therefore, the light L7 radiated from the light-emitting semiconductor structure 74 passes through the first phosphor layer 78 and is reflected by the stage 76 to travel toward the light-transmitting substrate 72. The partial ray L7^ is converted by the first phosphor layer 78 or the second phosphor layer 80, and the converted ray L72 is mixed with the unconverted ray L74 to produce the desired ray. The light conversion has been as described above and will not be described here. In addition, the stage 76 can have a reflective layer to enhance reflection while the first phosphor layer 78 is formed on the reflective layer. 62 on. It is added that the process of the second phosphor powder layer 80 being incorporated into the light-emitting semiconductor structure 74 and the light-transmitting substrate 72 is formed by yellow light lithography. 4B, FIG. 4B is a schematic diagram showing a light-mixing light-emitting diode 7 according to an embodiment. The light-mixing type light-emitting diode T further includes a selective reflection layer 82 formed on the light-transmitting substrate 72 as compared with the light-mixing type light-emitting diode 7 of the fourth preferred embodiment. The selective reflective layer 82 can be formed by a single layer of dielectric or a plurality of layers of photovoltaic. The multilayer dielectric can be composed of several different dielectrics. Light-emitting from the light-emitting semiconductor structure 74 toward the light-transmitting substrate 72 = L82 can pass through the selective reflection layer 82, and the others are reflected by the selective reflection layer. The light ray L82 that is allowed to pass through has a wavelength range which is determined by the selective reflection layer 82. The reflected light L84 will also be followed by the light L7 (shown in Figure 4A) of the fourth preferred embodiment of the body, and the portion of the light ray L7 can be increased by the ratio of the converted light. In addition, the selective reflection layer 82 can form a plurality of holes or domains, and the area of the selective reflection layer can be used as a means for controlling the proportion of light mixing. In the fourth embodiment, the light-mixing light-emitting diode 7 of the fourth preferred embodiment further includes a sinusoidal singularity minus 7, and the selected spurs (four) 82 can also be formed on the phosphor layer 80, which will not be described. Referring to FIG. 5, FIG. 5 is a diagram showing a first surface 922 and a first surface of the disk; and a second surface 924 of the Q99, according to the first embodiment of the present invention. The light-emitting semiconductor structure 94 is formed on the f-light body structure 94 === layer dielectric. The multilayer dielectric can be composed of a plurality of different dielectrics. Therefore, the light ray U of the illuminating semiconductor structure 94 is partially reflected by the selective reflective layer 15 200903843 96 and travels toward the transparent substrate 92 and the phosphor layer 98. . The wavelength of the light beam L92 is determined by the characteristic of the selective reflection layer. The light L94 will be partially converted by the phosphor layer 98. The conversion mechanism is as described in J^, and will not be described again. In addition, the selective reflection layer 96 may include a plurality of masks which are patterned by a geometric shape to control the selective reflection. The holes such as the holes may also be slits or the like; In this case, the proportion of the converted light can be increased, and the OE coordinate value such as the color temperature can be increased. In addition, the supplementary description of the diameter of the light-emitting semiconductor structure 94 is the same as that of the first preferred embodiment, and no longer: the light-body i is the first embodiment of the first embodiment. No longer. For example, the fifth preferred and light-mixing type illuminator 2 is faee up. The surface of the stage of the light-emitting diode 9 can form a reflective layer 4: strong L94) j is ordered The toothed line L92 is mixed 'to form the desired light. Please refer to FIG. 6A'. FIG. 6A is a schematic diagram showing a sixth comparative light-mixing type light-emitting diode 2 according to the present invention. The light-mixing type light-emitting diode includes a substrate 22, a phosphor layer 26, and a light-emitting semiconductor structure 24. The gouache powder is acoustically formed on the substrate 22. The luminescent body structure 24 is formed on the varnish layer ▲-step </ RTI> on the luminescent semiconductor structure 24 to form a further phosphor powder layer 28, and the selective reflection layer 29 can be formed on the phosphor layer 28. Aw Therefore, the radiation from the light-emitting semiconductor structure 24 toward the selective reflection sound 2 line ' whether or not converted by the phosphor layer 28 will be selectively reversed and the precursor will be reflected" so that there is a testability Reflecting layer 29, while unconverted light is not. This depends on the plan. The reflected light will be again produced by the camping powder layer 26, 28 = the reflected light will be selected again by the reflective layer 29. 200903843 Finally, the light passing through the selective reflective layer 29 is mixed into the desired light. Alternatively, the selectively reflective layer 29 can comprise a plurality of vias or masks that are patterned by geometry to control the area of selective reflection. Wherein, the surface of the pass is not limited to a circle, and the through holes may also be slits or other geometric shapes. By this, you can increase the proportion of the converted light. The selective reflection layer 29 is formed of two single layers of electricity or a multilayer dielectric. The multilayer dielectric can be composed of several different layers. In addition, the main descriptions of the light conversion and the light path are the same as those described above, and will not be described again here. Please refer to FIG. 6B. FIG. 6B is a schematic diagram of a light-mixing light-emitting diode 2' according to an embodiment. In comparison with the sixth preferred embodiment, the phosphor layer 28 of the light-mixing type dipole 2' is positioned above the selective reflection layer 29. Therefore, X-pass
28 J 補充說明的是，於前述實施例中，通過選擇 包含因麵娜爾谢4㈣狀n空u ，線，非僅包含被選雜反射騎料财 ^此外’反射電極與發光半導體結構電性S成 問，。另外’於包含載台之混光型、 形成於載台上，同樣能避免傳統f 螢先私層則可 成混光控制不㈣卩摘。於僅使封裝方式而造 中，Μ祕㈣先粉膠之混光型發光二極體 頃可發光半導體結構直接接_產生的介面 200903843 r二i ir生反射層以增加被轉換光線的量，以達到， 明之混光型s朽:ί，制混光的效果。因此，根據本發 影響紐。 先讀術的缺點均已獲得解決或輕立 發明之=徵狀詳述’係輕能更加清楚描述本 上’本發明所申請之專職圍的範《應該根據上述的說$作最办 廣的解釋，贿使其涵蓋所有可能的改變以及具相雜的安ι 200903843 【圖式簡單說明】 一較佳具體實施例之混光型發光 - 係繪示根據本發明之第 一極體之示意圖。 二極=之根據本發明之第二較佳具體實施例之混光型發光 光二極體之會根據本發明之第三較佳具體實施例之混光型發 圖。圖三B鱗示根據—具體實施例之混光型發光二極體之示意 光二根據本翻之第四具體實施例之混光型發 圖。圖四Β鱗祕據—具體實施例之混光型發光二極體之示意 (二赌之^ $根據本發明之第五較佳具體實細之混光型發光 光二本發明之第六較佳具體實施例之混光型發 圖。圖’、B麟不根據—具體實施例之混光型發光二極體之示意 【主要元件符號說明】 2'2 ' 3 ' 5 ' 5、7 ' 7' ' 9 :混光型發光二極體 12'22'32、52、72、92:透光基板 19 200903843 14、24、34、54、74、94 :發光半導體結構 16、36 :反射電極 18、38、78 :第一螢光粉層 40、80 :第二螢光粉層 56、76 :載台 58 :螢光粉膠 26、28、60、98 :螢光粉層 29、62、82、96 :選擇性反射層 122、322、922 :第一表面 124、324、924 :第二表面 162、362 :導體 542、742 :凸塊 562、762 :反射層 U、L3、L5、L6、L7、L9 :光線 L12、L32、L52、L72、L342、L3442 :被轉換光線 L14、L34、L54、L74、L344、L3444 :未被轉換的光線 L62、L82、L92 :穿透的光線 L64、L84、L94 :被反射的光線28 J It is added that, in the foregoing embodiment, by selecting the inclusion of the face narsi 4 (four) shape n-empty u, the line, not only including the selected hybrid reflection riding material, and the 'reflective electrode and the light-emitting semiconductor structure electrical property S Cheng asked. In addition, the mixed light type including the stage is formed on the stage, and the conventional f-lighting private layer can be prevented from being mixed light control (4). In order to make the package only, the secret light-emitting diodes of the first layer of the powder can be directly connected to the light-emitting semiconductor structure. The interface 200903843 r is used to increase the amount of converted light. In order to achieve, the light mixed type s: ί, the effect of mixing light. Therefore, according to the impact of this issue. The shortcomings of the pre-reading technique have been solved or the invention of the invention has been clarified. The detailed description of the syllabus is more clearly described in the above-mentioned "The full-service syllabus of the application of the invention" should be based on the above-mentioned statement. Explain that the bribe covers all possible changes and the various Anime 200903843 [Simultaneous Description of the Drawings] A light-mixed illumination of a preferred embodiment is a schematic representation of a first polar body in accordance with the present invention. Dipole = the light-mixing type of the light-mixing type light-emitting diode according to the second preferred embodiment of the present invention according to the third preferred embodiment of the present invention. Figure 3B is a schematic representation of a light-mixing type according to a fourth embodiment of the present invention. Figure 4 is a schematic diagram of a light-emitting type light-emitting diode according to a specific embodiment (a second bet according to the fifth preferred embodiment of the present invention) The light-mixing pattern of the specific embodiment is shown in Fig. 2, B Lin is not based on the schematic description of the light-mixing light-emitting diode of the specific embodiment [the main component symbol description] 2'2 ' 3 ' 5 ' 5, 7 ' 7 ' ' 9 : Light-mixing light-emitting diode 12'22'32, 52, 72, 92: light-transmitting substrate 19 200903843 14, 24, 34, 54, 74, 94: light-emitting semiconductor structure 16, 36: reflective electrode 18 , 38, 78: first phosphor layer 40, 80: second phosphor layer 56, 76: stage 58: phosphor powder 26, 28, 60, 98: phosphor layer 29, 62, 82 , 96: selective reflective layer 122, 322, 922: first surface 124, 324, 924: second surface 162, 362: conductor 542, 742: bump 562, 762: reflective layer U, L3, L5, L6, L7, L9: Light L12, L32, L52, L72, L342, L3442: converted light L14, L34, L54, L74, L344, L3444: unconverted light L62, L82, L92: transmitted light L64, L84 , L94: reflected light
Gl、G3、G5、G7 :間隙 20Gl, G3, G5, G7: gap 20