200921948 九、發明說明： 【發明所屬之技術領域】 本發明係關於一種發光元件及其製作方法，特別是一種以環 設的管狀結構來解決具有出光色溫不均問題之發光元件及其製作 方法。 【先前技術】 白光光譜為連續光譜，需至少兩種顏色（波長）以上的光混 合後，才能形成肉眼所見之白光，如三原色「紅光+綠光+藍光」 犯合後即為白光，或是利用.互補色，如「藍光（Biue) +黃光 (Yellow)」或「青光（cyan) +紅光（Red)」亦可形成白光。根 據白光形成的原理，目前白光發光二極體(Light Emitting Dk)de, LED)約可區分為兩種，第一種為三原色型白光LED，係利用分別 發出紅光、綠光、監光之三種半導體晶片組合而成，亦稱為多晶 片型（Multi-chip)白光LED或稱為三波長型（Triplewavelength) 白光LED。另一種為互補色型白光LED，利用發出單一顏色光線 之單一 LED晶片，加上可被該顏色光線激發而發出與該顏色光線 互補之互補色光線顏色之螢光粉，故又稱為單晶片型白光led。 但是因為使靜；型的白光LED，因半導體材f的差異，造成 驅動電路上設計的困難。 200921948 參照第「第丄圖」。「第i圖」係為習知之單晶片型白光咖 示意圖，單晶片舶光LED是將螢光粉與膠體依特定比例調配而 成螢光轉化層10,並將螢光轉化層10直接覆蓋MLED晶片13上 並填滿於碗杯14内。因此當LED晶片13發光時，其產生之光線 即會穿過榮光轉化層10，且LED晶片13所發出之藍色光線與該 螢光轉化層10被該光線所激發出之黃色光線經由混光後，得到白 光。因為LED 3 Π不同角度出射之光線，所行經螢光轉化層 10的路徑也不肖’穿透螢光轉化層10所需的距离隹也不同，角度大 的光線111因為會經由兩侧反射壁15反射並穿透出螢光轉化層 10 ’穿過螢光轉化層1G所行經的路徑距離較長，能量較多轉換為 螢光轉化層丨0被激發出之料，形成偏黃之白光於碗杯14外圍， k成單as片型白光LED在其所發出之白光外圍呈現環狀之音光區 域二也就是黃暈現象。而角度小的光線112朗為直接出射，因BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a light-emitting element and a method of fabricating the same, and more particularly to a light-emitting element having a problem of uneven color temperature and temperature and a method of fabricating the same. [Prior Art] The white light spectrum is a continuous spectrum. When light of at least two colors (wavelengths) is mixed, the white light seen by the naked eye can be formed. For example, the three primary colors "red light + green light + blue light" are white light, or White light can also be formed by using complementary colors such as "Biue + Yellow" or "cyan + Red". According to the principle of white light formation, the current white light emitting diode (LED) can be divided into two types. The first one is a three-primary white LED, which uses red light, green light, and light. Three semiconductor wafers are combined, also known as multi-chip white LEDs or triple-wavelength white LEDs. The other is a complementary color white LED, which is also called a single chip by using a single LED chip that emits a single color of light, and a phosphor that can be excited by the color light to emit a complementary color of light complementary to the color light. Type white light led. However, because of the static white light LED, the design of the driving circuit is difficult due to the difference in the semiconductor material f. 200921948 Refer to the "figure map". The "i-th picture" is a schematic diagram of a conventional single-chip type white light coffee. The single-chip light-emitting LED is a fluorescent conversion layer 10 which is prepared by proportioning the phosphor powder and the colloid in a specific ratio, and the fluorescent conversion layer 10 directly covers the MLED. The wafer 13 is filled in the bowl 14. Therefore, when the LED chip 13 emits light, the generated light passes through the glory conversion layer 10, and the blue light emitted by the LED chip 13 and the yellow light excited by the light conversion layer 10 are mixed by the light. After that, get white light. Because the LED 3 emits light at different angles, the path through the fluorescent conversion layer 10 is also different. The distance required to penetrate the fluorescent conversion layer 10 is also different. The light 111 having a large angle passes through the reflection walls 15 on both sides. Reflecting and penetrating the fluorescent conversion layer 10' The path traveled through the fluorescent conversion layer 1G is longer, and the energy is more converted into the fluorescent conversion layer 丨0 is excited to form a yellowish white light in the bowl. On the periphery of the cup 14, the k-single-as-type white LED exhibits a ring-shaped sound and light region on the periphery of the white light emitted by it, which is a yellow halo phenomenon. The light with a small angle of 112 is directly emitted, because
此穿過螢光轉化層10所行經路徑較短，能量較多在咖晶片U 所發出的藍光。因此量麻單Μ翻紅四時，會發現二同位 置’其色Μ同，且色溫差距最多可達到麗，造成所發出光線 色溫不均的問題。 _立錢弟「第2圖」。「第2圖」係為習知之多晶片之白光LED 不意圖之自光LED是將螢光粉與膠體依特定_調配而 200921948The passage through the fluorescent conversion layer 10 is shorter, and the energy is more blue light emitted by the coffee wafer U. Therefore, when the amount of hemp is turned red, it will be found that the same position is the same, and the color temperature difference can reach Li, causing the problem of uneven color temperature. _ Li Qiandi "Figure 2". "Picture 2" is a conventional multi-wafer white LED. The self-lighting LED is a combination of fluorescent powder and colloid.
成螢光轉化層20’並將螢储化層2G直接覆蓋於哪日日日片. 18b、18c上，並填滿碗杯19。在多晶片之白光LED中，除了有 單曰曰片型白光LED的黃暈問題，在多晶片之白光LED 晶片18a、 18b、18c之間’因為晶片表面出光經過螢光粉多為一次，而在晶 片與曰曰片之間則因為受到兩邊晶片所發出光線同時經過該處螢光 粉，造成晶片與晶片之間的出光色溫相較晶片表面出光色溫低的 現象’使得從多晶片之自光LED出光面上看，容易看酬顯色溫 不均的現象。 這種色溫不均的現象，理論上讓藍光經過相同距離的螢光轉 化層即可得到同樣色溫的光線。在美國專利US5959316 “Multiple en-capsulation of phosphor-LED devices” 中，係以半球殼狀的螢光轉 化層覆蓋LED晶片，但是這種設計會導致製程上製作的困難，而 不谷易貫現。在美國專利 US7129638 “Light emitting devices with a phosphor coating having evenly dispersed phosphor particles and constantthickness”中，係以沈降方式將螢光粉點膠後，在膠體硬化 前’讓螢光粉均勻沉降於LED晶片上形成一固定螢光轉化層，但 是在實際應用上，材料選擇及製程亦不容易。在美國專利 US6650044 “Stenciling phosphor layers on light emitting diodes” 中， 係以conformal封裝方式將螢光轉化層以均勻的厚度貼覆於晶片 200921948 表面，有效改善色溫不均的問題，但因製程影響所及，只有覆晶 晶片適用conformal封裝技術’以避免金線斷裂的問題。在日本專 利 JP2004179644 “PHOSPHOR LAMINATION AND LIGHT SOURCE USING THE SAME”中，係以網板印刷方式將螢光轉化 層以均勻的厚度貼覆於晶片表面，有效改善色溫不均的問題，但 因製程的設計’同樣只有覆晶晶片適用網板印刷方式。在The fluorescent conversion layer 20' is formed and the fluorescing layer 2G is directly covered on the day of the day. 18b, 18c, and the bowl 19 is filled. In the multi-wafer white LED, in addition to the yellow halo problem of the single-chip white LED, between the multi-wafer white LED chips 18a, 18b, 18c 'because the surface of the wafer passes through the phosphor powder once, Between the wafer and the cymbal, since the light emitted by the two sides of the wafer passes through the phosphor at the same time, the color temperature of the light emitted between the wafer and the wafer is lower than the color temperature of the surface of the wafer. Looking at the LED light surface, it is easy to see the phenomenon of uneven color temperature. This phenomenon of uneven color temperature theoretically allows blue light to pass through the same level of fluorescent conversion layer to obtain light of the same color temperature. In U.S. Patent No. 5,959,316, "Multiple en-capsulation of phosphor-LED devices", LED wafers are covered with a hemispherical shell-like phosphor conversion layer, but this design can lead to difficulties in fabrication and is not easy to achieve. In U.S. Patent No. 7,129,638, "Light emitting devices with a phosphor coating having evenly dispersed phosphor particles and constant thickness", after the phosphor powder is dispensed by sedimentation, the phosphor powder is uniformly deposited on the LED wafer before the colloid is hardened. A fixed fluorescent conversion layer, but in practical applications, material selection and process are not easy. In the US Patent No. 6,650,044 "Stenciling phosphor layers on light emitting diodes", the fluorescent conversion layer is applied to the surface of the wafer 200921948 in a uniform thickness in a conformal packaging manner, thereby effectively improving the problem of uneven color temperature, but due to the influence of the process. Only the flip chip is suitable for conformal packaging technology' to avoid the problem of gold wire breakage. In the Japanese patent JP2004179644 "PHOSPHOR LAMINATION AND LIGHT SOURCE USING THE SAME", the fluorescent conversion layer is applied to the surface of the wafer with a uniform thickness by screen printing, thereby effectively improving the problem of uneven color temperature, but due to the design of the process. 'The same is true for flip chip wafers. in
US2⑻60003477 及 W02004040661 “METHOD FOR PRODUCINGUS2(8)60003477 and W02004040661 “METHOD FOR PRODUCING
A LIGHT SOURCE PROVIDED WITH ELECTROLUMINESCENTA LIGHT SOURCE PROVIDED WITH ELECTROLUMINESCENT
DIODES AND C03VEPRISING A LUMINESCENCE CONVERSION ELEMENT”巾，係以製程枝將材料冑直接在LED以上進行製 作，相較於網版印刷製程，此專利的機台與製程皆需要精確控制， 以達到預期效果。 【發明内容】 因此為了解決白光LED所發出之光線色溫不均的問題，本發 明提供-種發光元件及其製作方法，是—種環設辟狀結構之發 光元件及其製作方法。 本發明之發光元件，其包含有：基板、至少-管狀結構和、 至少一發光晶片和至少-螢光轉化層。其中該基板，具有一表面； 至少-管狀結構’形成於該表面’且管狀結構之兩端各具有開口， 200921948 管狀結構係以二端之一端設置於該表面；至少一發光晶片，具有 複數個發光面，且發光晶片設置於該表面並被該管狀結構所環 繞，至少一螢光轉化層，設置於管狀結構内並覆蓋發光晶片，兮 螢光轉化層在該發光晶片處之最大垂直厚度與最大水平厚度之比 值為0.1至10。管狀結構的材質係供該發光晶片所發出之光線與 該螢光轉化層被激發之光線穿透。 本發明發光元件之製作方法，其包含有：設置至少—發光晶 片於基《面；形成至少一管狀結構於基板表面並環繞該發光晶 片；設置螢光轉化層於管狀結構内並覆蓋該發光晶片。 本發明藉由管狀結構，來限縮螢光轉化層的分布範圍，同時 控制光線自發光晶片出級，所需穿透螢光轉化層的距離，由於 管狀結構的材質係供·光“所發出之光線無螢光轉化層被 激發之光線穿透，因此在不考慮反射的情形下，能使自發光^片 出光的光線經由穿透螢舖化層之路徑距離的控制，來解決習知 之螢光粉塗佈封裝技術造成的出光色溫不均問題。 有關本發_特徵與實作，賊合圖示作最佳實施例詳細說 明如下。 【實施方式】 請參照「第3圖 第3圖」％為本發明之第一實施例之軸 200921948 向截面不意圖。一種發光元件100 ,其包含有：基板21、發光晶 片22、管狀結構23和螢光轉化層24。 其中基板21具有一表面21a。基板21是一種具有導熱性的材 料，該基板21的材質可以是但不僅限於是陶瓷、金屬、有機高分 子或石夕。 發光晶片22設置於基板21之表面21a上。發光晶片22可以 是LED晶片’當然也可以是雷射二極體①狀沉Di〇de, LD)晶片。 發光晶片具有正面22a與側面22b。 官狀結構23形成於基板21之表面21a上並環繞發光晶片22。 管狀結構23兩端各具有—開口 23a、现。該管狀結構23係以靠 近開口 23a之端自又置於表面21a上。該管狀結構π的材質係供 發光晶片22所發出之光線與營細⑽％被激發之光線穿透。 該管狀結構23蝴妓卿、_旨、麵，也可以是挪和石夕土 混合物。形成管狀賴23的方法可岭㈣僅限於是黃光微影製 程、雷射寫入製程、壓模、侧或射出成型。管狀結構23之徑向 截面的形狀是圓形231，當然也可以是四邊形232或六邊形说 等多邊形。請參照「第4A圖」，「第4A圖」係為本發曰月第一實施 例之官狀結構㈣_的形狀，其巾管狀結構徑向截面的 形狀是圓形231。請參照「第4B圖」，「第圖」係為本發明之 10 200921948 管狀結構徨向截面的形狀另一示意圖，其中管狀結構徑向截面的 形狀是四邊形232。請參照「第4C圖」，「第4C：圖」係為本發明 之管狀結構徨向截面的形狀另二示意圖，其中管狀結構徑向截面 的形狀是六邊形幻3。 發光晶片22在管狀結構23内的位置可以是設置在該管狀結 構23之中心軸位置234上，當然也可以是設置在離軸位置235上。 請參照「第5A圖」’「第5A圖」係為本發明第一實施例之發光晶 片在管狀結構内的位置示意圖，其中發光晶片22在管狀結構23 内的位£是在中心軸位置234。請參照「第5B圖」，「第5B圖」 孫為本發明之發光晶片在管狀結構内的位置另一示意圖，其中發 光晶片22在官狀結構23内的位置是在離轴位置235。 螢光轉化層24設置於管狀結構23内並覆蓋發光晶片22，其 中爹光轉化層24設置於管狀結構23内並覆蓋發光晶片22後，與 % ^多氟炙界之液面是水平，當然也可以是曲面。螢光轉化層24與空 氟炙界二液面係曲面，會有指向性的功效，具有能夠將發光晶片 戶斤參出的光線，集中在同—方向的效果。請參照「第6A圖」，「第 你為本發明第-實施例之螢光轉化層液面形狀示意圖，其 爹米轉化層24液面是水平241。請參照「第6B圖，「… 、 肀 」弟6B圖 .為未發日之螢光轉化層液面形狀另—示意圖’其中鸯光轉化層 11 200921948 24液面形狀是内凹曲面242。請參照「第6C圖」，「第π圖」係 為本發明之螢光轉化層液面形狀另二示意圖，其t螢光轉化層^ 液面形狀是外凸曲面243。 管狀結構23係盥择古s y η γ , — /、毛先日日片22同樣形成於基板21之表面21a 吕肷口構23 %繞發光晶片22。管狀結構幻的管壁高度可 、乂二冋於22的高度、等於發光晶片U的高度或小於發 光二片 ^度、鱗化層24係填統管狀結構23内並覆蓋DIODES AND C03VEPRISING A LUMINESCENCE CONVERSION ELEMENT" towel is made by using the process branch to directly make the material on the LED. Compared with the screen printing process, the machine and the process of this patent need precise control to achieve the desired effect. SUMMARY OF THE INVENTION Therefore, in order to solve the problem of uneven color temperature of light emitted by a white LED, the present invention provides a light-emitting element and a method of fabricating the same, which are a light-emitting element having a ring-shaped structure and a method of fabricating the same. An element comprising: a substrate, at least a tubular structure, and at least one luminescent wafer and at least a fluorescent conversion layer, wherein the substrate has a surface; at least a tubular structure is formed on the surface and both ends of the tubular structure Each having an opening, 200921948 tubular structure is disposed on the surface at one end of the two ends; at least one illuminating wafer having a plurality of illuminating surfaces, and the illuminating wafer is disposed on the surface and surrounded by the tubular structure, at least one fluorescent conversion layer Provided in the tubular structure and covering the light-emitting chip, and the maximum conversion of the fluorescent conversion layer at the light-emitting chip The ratio of the thickness to the maximum horizontal thickness is 0.1 to 10. The material of the tubular structure is such that the light emitted by the light-emitting chip and the light emitted by the fluorescent conversion layer are penetrated. The method for fabricating the light-emitting element of the present invention comprises: Providing at least a light-emitting chip on the surface of the substrate; forming at least one tubular structure on the surface of the substrate and surrounding the light-emitting chip; and providing a fluorescent conversion layer in the tubular structure and covering the light-emitting chip. The invention restricts the light-emitting by the tubular structure The distribution range of the light conversion layer, while controlling the distance from which the light is emitted from the light-emitting wafer, the distance required to penetrate the fluorescent conversion layer, because the material of the tubular structure is the light emitted by the light-free conversion layer Penetration, so that the light from the light emitted from the light-emitting layer can be controlled by the distance of the path through the fluoridation layer without considering the reflection, so as to solve the light color temperature caused by the conventional phosphor powder coating and packaging technology. Both problems. The best embodiment of the present invention is described below in detail with respect to the present invention. [Embodiment] Please refer to "Fig. 3, Fig. 3", which is the axis of the first embodiment of the present invention. A light-emitting element 100 comprising: a substrate 21, a light-emitting wafer 22, a tubular structure 23, and a fluorescent conversion layer 24. The substrate 21 has a surface 21a. The substrate 21 is a material having thermal conductivity, and the material of the substrate 21 may be, but not limited to, ceramic, metal, organic polymer or shovel. The light emitting chip 22 is disposed on the surface 21a of the substrate 21. The illuminating wafer 22 may be an LED wafer ‘of course, it may also be a laser diode-like LD) wafer. The light emitting wafer has a front surface 22a and a side surface 22b. The official structure 23 is formed on the surface 21a of the substrate 21 and surrounds the light-emitting wafer 22. Both ends of the tubular structure 23 have an opening 23a, which is present. The tubular structure 23 is placed on the surface 21a again from the end near the opening 23a. The material of the tubular structure π is such that the light emitted by the light-emitting chip 22 and the light emitted by the camp (10)% are penetrated. The tubular structure 23 may be a mixture of a scorpion, a scorpion, or a mixture of a smectite and a smectite. The method of forming the tubular lamella 23 can be limited to a yellow lithography process, a laser writing process, a stamper, a side, or an injection molding. The shape of the radial section of the tubular structure 23 is a circle 231, and of course a polygon such as a quadrilateral 232 or a hexagon. Please refer to "Fig. 4A", which is the shape of the official structure (4) of the first embodiment of the present invention, and the radial cross section of the tubular structure is circular 231. Please refer to "Fig. 4B", which is another schematic view of the shape of the cross-section of the tubular structure of the present invention 10 200921948, wherein the shape of the radial section of the tubular structure is a quadrilateral 232. Referring to Fig. 4C, Fig. 4C: Fig. 2 is a schematic view showing the shape of the cross section of the tubular structure of the present invention, wherein the shape of the radial section of the tubular structure is hexagonal. The location of the illuminating wafer 22 within the tubular structure 23 may be disposed at a central axis location 234 of the tubular structure 23, although it may be disposed at an off-axis location 235. Please refer to FIG. 5A and FIG. 5A as a schematic view of the position of the illuminating wafer in the tubular structure according to the first embodiment of the present invention, wherein the position of the illuminating wafer 22 in the tubular structure 23 is at the central axis position 234. . Please refer to "Fig. 5B", which is another schematic view of the position of the illuminating wafer in the tubular structure of the present invention, wherein the position of the luminescent wafer 22 in the official structure 23 is at the off-axis position 235. The fluorescent conversion layer 24 is disposed in the tubular structure 23 and covers the luminescent wafer 22, wherein the luminescent conversion layer 24 is disposed in the tubular structure 23 and covers the luminescent wafer 22, and the liquid level of the % ^ polyfluorocarbon boundary is horizontal, of course It can also be a surface. The phosphor conversion layer 24 and the fluorocarbon boundary two-surface curved surface have a directivity effect, and have the effect of concentrating the light emitted from the light-emitting chip in the same direction. Please refer to "Fig. 6A", "You are the schematic diagram of the liquid level of the fluorescent conversion layer of the first embodiment of the present invention, and the liquid level of the glutinous rice conversion layer 24 is level 241. Please refer to "Fig. 6B, "...肀 弟 6 6B 图. For the unexpanded day, the liquid level of the conversion layer is another - schematic 'where the 鸯 light conversion layer 11 200921948 24 liquid surface shape is a concave curved surface 242. Please refer to "Fig. 6C", which is a second schematic view of the liquid phase shape of the fluorescent conversion layer of the present invention, and the t-light conversion layer liquid surface shape is a convex curved surface 243. The tubular structure 23 is selected from the group of s y y γ γ, and the hair first Japanese film 22 is also formed on the surface 21a of the substrate 21. The height of the tube wall of the tubular structure can be as high as 22, the height of the illuminating wafer U is less than the height of the illuminating wafer U, and the squamous layer 24 is filled with the tubular structure 23 and covered.
發光晶片22。料轉化層24填級管狀結構23内的高度係由填 充入之$光轉化層24的膠量所決定。請參照「第6D圖」、「第6E 圖」與「㈣圖」，財f狀結構23辭壁高度高於發光晶^ 的局度，且由於螢光轉化層24填充於管狀結構23_膠量多寡，Light emitting chip 22. The height in the fill-in tubular structure 23 of the feed conversion layer 24 is determined by the amount of glue that is filled into the light conversion layer 24. Please refer to "6D", "6E" and "(4)". The wall height of the financial structure is higher than that of the luminescent crystal, and the fluorescent conversion layer 24 is filled in the tubular structure 23_ The amount,
可以區分為少膠量發光元件8Q、中膠量私元件Μ或多膠量發光 兀件82。請參照「第6D 立 發光元件示 :”祕、第6E圖」，「第6E圖」係為情量發光元件示音 圖。請參照「第6F圖」，「第6F圖」係為 〜、 請參昭「第6GR 「〜 「 意圖。 月…弟6G圖」、「弟6Η圖」與「第61圖」，其中 的管壁紐高於發編22的高度，且由 °構2。 填充於管狀結構23内的膠量多寡，可以區分為少膠量=層24 83、中膠量發光元件84或多膠量發光元件85。請來昭「/先疋件 /'、、、乐 6G 圖 12 200921948 「第6G圖」係為少膠量發光元件示意圖。請參照「第6H圖」，「第 圖」係為中膠量發光元件示意圖。請參照「第圖」，「第61 圖」係為多膠量發光元件示意圖。請參照「第6J圖」、「第6K圖」 與「第6L圖」’其中管狀結構23的管壁高度係低於發光晶片22 的高度’且由於螢光轉化層24填充於管狀結構23内的膠量多寡， 可以區分為少膠量發光元件86、中膠量發光元件87或多膠量發光 凡件88。請參照「第6J圖」，「第6J圖」係為少膠量發光元件示 思'圖。請芩照「第6K圖「第6K圖」係為中膠量發光元件示意 圖。請參照「第6L圖」’「第6L圖」係為多膠量發光元件示意圖。 由於管狀結構23的材質係供發光晶片22所發出之光線與螢 光轉化層24被激發之光線穿透，因此在科慮反_情形下，管 狀、、、。構23與螢光轉化層24 >主入該管狀結構23膠量多寡的設計， 會影響光線自該發光晶片22表㈣光後，穿透該螢光轉化層^ 所需行經的距離。 f繼層24在發編22叙_直厚扣與最大水 厚度U之嶋於(H錢之間時，能使自發光晶片u出光 、先線經由穿透螢光轉化層24之路徑距離的控 件⑽的出光色溫均句。 喝凡 而經實驗結果得知最麵f光轉化層Μ在發光晶片U處之 200921948 最大垂直厚度L1與最大水平厚度u之比值會依據所使用的不同 發光晶片22或不同的發光特性，而會有不同的數值範圍。這是因 為不同種類或不同發光特性之發光“ 22正面與侧面之出光量比 例不才水’因此榮光轉化層24所需塗佈厚度比例也並非定值。舉 例而言，由於面射型發光晶片的出光比例，在垂直出光方向的出 光量約為6G〜8G%，水平出光方向的出光量約為2Q〜鄕。由此 得知面射型發光“在垂直出光方向與水平出光方向的出光比值 為1· 5〜4倍’因此就此一面射型發光晶片來說，最佳的最大垂直 厚度L1與最大水平厚度L2之比值為丨.卜4。 請參照第「第7 ®」，「f 7圖」餘輕光轉化層的最大垂 直厚度與最大水平厚度的比值來量_魏化觸發光元件表面 色溫表。薄魏化鎵（Thm⑽）發光晶片在垂直出光方向的出 光ϊ約為97%，水平出光方向的出光量約為桃，以往以薄型氮 化蘇當作發光晶片的發統件m色溫約有麵〜测κ的 誤差，經過此螢光轉化層24厚度的修正，當榮光轉化層24在發 光晶片22處之最大垂直厚度L1與最大水平厚度L2之比值介於 0.1至10之間時，其出光色溫差縮小至1000K以内；當營光轉化 層24在發光晶片22處之最大垂直厚度L1與最大水平厚度U之 比值’I於1.5至4之間時，其出光色溫差縮小至3峨以内，有助 14 200921948 於改善色溫不均的現象。 由於發光晶片22出光之角度大的光線會因為管狀結構23的 材貝W生rtn直接讀’沒有習知會被兩側反射壁反射，而產生穿 透發光_ 24 __域，__繼轉化層24 被激發出之黃光，造成辛、^ β 一 咖不句的問題。當發光元件100内之發 光晶片22發出，度之光線時，雖《透螢光轉化層24的路 2巨:長短*同，但岭狀結構U來限縮螢光轉化層Μ的 分布範圍，肋控制最結直厚度L1與最大水平厚度L2的比值， =狀、、、。構23的材質係供該發編^所發出之光線與該營 光轉化層24被激發之先綠空、* 、、'ι ；、，因此在不考慮反射的情形下， 使自發光晶片22出光的#綠γ丄* ㈣奸魏層24之路徑距離 控制’避免以往出光色溫不均的現象。 請參照第「第δ圖」，「第δ 軸向截面干㈣^ &狀關之 〜本貫施例之發光元件100的結構，已於第一杏 崎觀，故相嶋細比較，在此刪料實^ =礙輸件㈣包含㈣細。微輪係設 、土板21之表面2la上並覆魏管狀結構23。 以將第一實施例中兄係用 匯聚在同-方向。 _出各種方向、角度的光線 15 200921948 向截面示意圖。本實施例”知為本發明之第三實施例之轴 例中所揭露，故相同部η:二的結構’已於第二實施 土反」且4龍載具29内側表面 錄 將發光元編=用以 _可以是但不僅限於_、金屬驾 的材質可以是但不僅限於是金屬或半導體。 反射層30 *照㈣m ®」撕她第四實施例之 袖向截面示意圖。本實施例之發光元件1⑽的結構，已於第一實 施例中所揭露，故相同部分請對照比較，在此不作贅述。本實施 例之特徵在於管狀轉23具有_管壁25與外婦壁26。内側 官壁25係垂直於表面2la，外側管壁26係與表面加之間夹銳角 A。銳角A的角度可以是介於1度至89度之間。在外侧管壁％ 上係形成反射層31。反射層31的材質可以是但不僅限於是金屬或 半導體。 當發光晶片22發出各種不同角度之光線時，角度大的光線穿 透s狀結構23之内側首·壁25後’被形成於外侧管壁26上之反射 層31反射。這種管狀結構23的設計，一方面用以限縮螢光轉化 16 200921948 層24的分布範圍，用以抑 工巾·!取大垂直厚度L1與最大水平厚度]^2 的比值，避免發光晶片22山— 所务出角度大的光線，因為通過螢光轉 化層24的路径較長，能量^ 月匕里季乂夕轉換為螢光轉化層24被激發出之 黃光’造成色溫不均的問蕺。 〜另一方面利用反射層31與控制銳角 Α的角度使22所發㈣度大的光線反射出光，達到將該 發光元件所發_光線轉在財向的功效。 請參照「第11圖，「楚η 」 昂11圖」係為本發明之第五實施例之 轴向截面示意圖。本實施例之發光树⑽的結構，已於第一實 施例中所揭露，故铜部分請對·較，在此不作舰。本實施 例更包s t封讀具32。封裝魅η係為碗杯狀載體，用以承 載基板21 ’且摘裝載具32内侧表面上臟有—反射層％，用 以將發光元件KX)上所發出之光線反龍聚同-方向。封裂载具 3-的材貝可以是但不僅限於是陶竟、金屬、塑膠或樹自旨。反射層 33的材質可以是但不僅限於是金屬或半導體。 睛蒼照「第12圖」’「第12圖」係為本發明之第六實施例之 軸向截面7F,E、®。本實施例之發統件⑽的結構，已於第一實 施例中所減，故_部分請m扯較，在妨作魏。本實施 例之特徵在於複油發光元件⑽形成於同—基板21上。 °月參'、、、第I3圖」’「第圖」係為本發明之第一實施例製 17 200921948 作流程圖。-種發光元件之製作方法包含有： 基板（步㈣）。在基__&_# (步驟52 )。設 各具有開口，管狀結構係以二端之一端設置 I構私 置發光晶片於基板之表面上，並被管狀結; 至10 ξ::==ξ?: m«可叹料伽於是㈣、驾、有機高分子或 明讀結構的方式是黃統影製程、雷射寫入製程、 姓伽出成型。材細件所發 出^光線與雜光轉化層被激發之光線穿透^狀結構的材質可 以疋但不僅限於切膠、翻、玻璃或轉私土混合物。 (""、、第14圖」’「第14圖」係為本發明之第一實施例另 -製作流簡。—種發光元件之製作方法包含有：首先，提供導 熱絲板（步驟61)。設置發光晶片於絲面上（步驟62)。在具 有1光^的表面上形成管狀結構，且管狀結構環繞該發光晶 片亚且官狀結構兩端各具有開口，管狀結構係以二端之一端設 ;表面（步63)。設置螢光轉化層於管狀結構内並覆蓋發光晶 片忠光轉化層在該發光晶片處之最大垂直厚度與最大水平厚度 18 200921948 之比值控制為〇·1至l〇 (步驟64)。 基板的材質可以是但不僅限於是陶瓷、金屬、有機高分子或 矽。形成該透明管狀結構的方式是黃光微影製程、雷射寫入製程、 壓模、蝴或射出成型。該管狀結構的材質係供該發以件所發 出之光線與該螢光轉化層被激發之練穿透。管狀結構的材質可 乂疋但不僅限於是;5夕膠、樹脂、玻璃或石夕膠與石夕土混合物。 Μ芬照1第15A圖」、「第 「第15A圖」係為本發明之第六實施例製作流程第—步驟示意 圖弗lDB圖」係為本發明之第六實施例製作流程第二步驟示意 °第 图」A為本發明之第六實施例製作流程第三步驟示音 θ第1犯圖」係為本發明之第六實施例製作流程第四步驟示音、 圖。首弁，如「笛Ί c 、 如「 昂15A圖」所示，提供具導熱性之基板21。然後 第15B圖」所示，在基板。表面上形成複數個管狀結構μ , 基； 兩令而各具有開口，管狀結構係以二端之—端設置於 ^反21表面。接著如「第ΐ5〇圖」所示，於各管狀結構a内之 =1 t面設置至少—發光晶片22。最後，如「第15D圖」所 :填充#光轉化層24於管狀結構23内並覆蓋發光晶片22，螢 先轉化層24錢發光^ 22處之最大餘厚度L1與最大水平严 度匕2之比值為0·1至1〇。 子 19 200921948 基板的材#以是但不僅限妓陶m有機高分子或 石夕。形成該透明結構的方式是黃光微影製程、雷射寫入製程、 壓模、蝴或射〆x型。該管狀結構的材質係供該發光元件所發 出之光線與該0轉化層被激發之光線穿透。管狀結構的材質可 以是但不僅限於矣矽膠、樹脂、玻璃或矽膠與矽土混合物。 雖然本發明以鈾述之較佳實施例揭露如上，然其並非用以限 定本發明，任何熟習相像技藝者，在不脫離本發明之精神和範圍 内，當可作些許之更動與潤飾，因此本發明之專剎保護範圍須視 本說明書所附之巾請專利範_界定者為準。 【圖式簡單說明】 係為習知之單晶片型白光咖示意圖； =為習知之多晶片型白光〜圖； 示意圖； .4本發明之第―實施例之意圖； l4A圖係為本發明第-實施例之營狀結構#向截面的形狀 第4Β 另—示意圖 圖係為本發明第一 貫施例之營狀結構#向截面的形狀 第一實施例之管狀結構徑向截面的另二 第4C圖係為本發明 示意圖； 20 200921948 第5A圖係為本發明第一實施例之發光晶片在管狀結構内的 位置示意圖； 第5B圖係為本發明第一實施例之發光晶片在管狀結構内的 位置示意圖； 第6A圖係為本發明第一實施例之螢光轉化層液面形狀示意 圖； 第6B圖係為本發明第一實施例之螢光轉化層液面形狀另一 不意圖， 第6C圖係為本發明第一實施例之螢光轉化層液面形狀另二 不意圖， 第6D圖係為少膠量發光元件示意圖； 第6E圖係為中膠量發光元件示意圖； 第6F圖係為多膠量發光元件示意圖； 第6G圖係為少膠量發光元件示意圖； 第6H圖係為中膠量發光元件示意圖； 第61圖係為多膠量發光元件示意圖； 第6J圖係為少膠量發光元件示意圖； 第6K圖係為中膠量發光元件示意圖； 第6L圖係為多膠量發光元件示意圖； 21 200921948 第7圖係控制螢光轉化層在發光晶片片θ 大水平厚度的比縣量測發光元件的表化、、，讀且厚度與最 第8圖係為本發明之第二實施例之輪向Ί 第9圖係為本發明之第三實施例之面示意圖； 第1〇圖係為本發明之第四實施例之鸲=;· 第11圖係為本發明之第五實施例之 1、圖’ 筮1?岡私炎士 向截面示意圖； 弟_4本發明之第六實施例之輪向截面. 第13係為本發明之第—實施例製作流程圖/、 第14圖係為本發明之第—實施例另1作流程圖. 弟bA圖係為本發明之第六實施例 ’ 圖； ;IL狂乐—步驟示意 二步驟示意 弟15B圖係為本發明之筮 圖； 本U之施例製作流程第 第15c圖係為本發明之第六實 圖；及 施例製. 第三步驟示意 第5D圖係為本發明之第六實施例製 圖。 【主要元件符號說明10... 作流程第 四步驟示意 螢光轉化層 22 200921948 13 .........................LED晶片 14 .........................碗杯 15 .........................反射壁 18a........................LED 晶片 18b.......................LED 晶片 18c........................LED 晶片 f 19.........................碗杯 20 .........................螢光轉化層 21 .........................基板 21a........................表面 22 .........................發光晶片 22a........................正面 22b.......................側面 \ ^ 23 .........................管狀結構 23a........................開口 23b.......................開口 24 .........................螢光轉化層 25 .........................内侧管壁 26 .........................外侧管壁 23 200921948 28 .........................微透鏡 29 .........................封裝載具 30 .........................反身十層 31 .........................反身f層 32 .........................封裝載具 33 .........................反射層 80 .........................少膠量發光元件 81 .........................中膠量發光元件 82 .........................多膠量發光元件 83 .........................少膠量發光元件 84 .........................中膠量發光元件 85 .........................多膠量發光元件 86 .........................少膠量發光元件 87 .........................中膠量發光元件 88 .........................多膠量發光元件 100.......................發光元件 111........................角度大的光線 112.......................角度小的光線 231.......................圓形 24 200921948 232 .......................四邊形 233 .......................六邊形 234 .......................中心軸位置 235 .......................離軸位置 241 .......................水平 242 .......................内凹曲面 243 .......................外凸曲面 L1.........................最大垂直厚度 L2.........................最大水平厚度 25It can be distinguished as a small amount of light-emitting element 8Q, a medium-sized amount of private element Μ or a multi-adhesive amount of light-emitting element 82. Please refer to "6D vertical light-emitting device display: "secret, 6E", and "6E" is a sound-emitting device sound map. Please refer to "6F" and "6F" as ~, please refer to "6GR" ~ "Intention. Month...Different 6G", "Different 6" and "61", the tube The wall is higher than the height of the hair braid 22 and is constructed by 2 degrees. The amount of glue filled in the tubular structure 23 can be divided into a small amount of glue = layer 24 83, a medium amount of light-emitting element 84 or a multi-size amount of light-emitting element 85. Please come to the show "/First" / ', ,, music 6G Figure 12 200921948 "6G Figure" is a schematic diagram of a small amount of light-emitting components. Please refer to "6H", which is a schematic diagram of a medium-gloss light-emitting element. Please refer to "Figure", "Figure 61" is a schematic diagram of multi-glued light-emitting components. Please refer to "6J", "6K" and "6L", wherein the height of the tube wall of the tubular structure 23 is lower than the height of the luminescent wafer 22 and because the fluorescent conversion layer 24 is filled in the tubular structure 23. The amount of glue can be divided into a small amount of light-emitting element 86, a medium amount of light-emitting element 87, or a multi-size amount of light-emitting element 88. Please refer to "6J" and "6J" as a diagram of a small amount of light-emitting elements. Please refer to the "Picture 6K" in Figure 6K as a schematic diagram of the medium-gloss light-emitting element. Please refer to "6L" and "6L" as a schematic diagram of a multi-component light-emitting element. Since the material of the tubular structure 23 is such that the light emitted from the light-emitting chip 22 and the light which is excited by the fluorescent conversion layer 24 are penetrated, in the case of a tube, the tube is made. The design of the structure 23 and the fluorescent conversion layer 24 > the amount of glue into the tubular structure 23 affects the distance traveled by the light conversion layer from the surface of the luminescent wafer 22 after the light is transmitted. The f-step layer 24 can make the self-luminous wafer u emit light when the straight thick buckle and the maximum water thickness U are between (H), and the first line passes through the path distance of the fluorescent conversion layer 24 The color temperature of the control (10) is uniform. The experimental results show that the ratio of the maximum vertical thickness L1 to the maximum horizontal thickness u of the most f-light conversion layer 发光 at the illuminating wafer U will depend on the different luminescent wafers 22 used. Or different luminescent characteristics, but different numerical ranges. This is because the illuminating of different types or different illuminating characteristics "the ratio of the amount of light emitted from the front side to the side is not water", so the ratio of coating thickness required for the glory conversion layer 24 is also For example, due to the light-emitting ratio of the surface-emitting illuminating wafer, the amount of light emitted in the vertical light-emitting direction is about 6 G to 8 G%, and the amount of light emitted in the horizontal light-emitting direction is about 2 Q 鄕 鄕. The type of illuminating "the ratio of the light output in the direction of the vertical light emission to the horizontal light exiting direction is 1.5 to 4 times". Therefore, the ratio of the optimum maximum vertical thickness L1 to the maximum horizontal thickness L2 is 丨. 4. Please Refer to the “7th®”, “f 7” diagram for the ratio of the maximum vertical thickness of the light-light conversion layer to the maximum horizontal thickness. _ Weihua triggers the surface color temperature table of the light element. Thin Wei-Gallium (Thm(10)) illuminating wafer The exit pupil of the vertical light exiting direction is about 97%, and the amount of light emitted by the horizontal light exiting direction is about peach. In the past, the thin color tantalum nitride was used as the hair piece of the light-emitting chip, and the m color temperature was about the surface-measured κ error. Correction of the thickness of the conversion layer 24, when the ratio of the maximum vertical thickness L1 of the glotex conversion layer 24 at the luminescent wafer 22 to the maximum horizontal thickness L2 is between 0.1 and 10, the difference in the color temperature of the emitted light is reduced to less than 1000K; When the ratio of the maximum vertical thickness L1 of the conversion layer 24 to the maximum horizontal thickness U of the conversion layer 24 is between 1.5 and 4, the difference in the color temperature of the light emission is reduced to less than 3 ,, which helps 14 200921948 to improve the color temperature unevenness. Phenomenon, because the light of the light-emitting chip 22 has a large angle of light, because the material of the tubular structure 23 is directly read, it is not known that it will be reflected by the reflective walls of both sides, and the light-emitting _ 24 __ domain is generated. Conversion layer 24 is excited Huang Guang, causing the problem of symplectic, ^ 一 一 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 The structure U is used to limit the distribution range of the fluorescent conversion layer ,, and the rib controls the ratio of the maximum straightness thickness L1 to the maximum horizontal thickness L2, = shape, and the texture of the structure 23 is for the light emitted by the hair braiding The green light, *, , 'ι;, and the light-emitting layer 24 are excited, so that the path of the green ray 丄* (four) of the self-luminous wafer 22 is emitted without considering the reflection. The distance control 'avoids the phenomenon of uneven color temperature in the past. Please refer to the "th δ map", "the δ-axis cross section is dry (4) ^ & the shape of the light-emitting element 100 of the present embodiment has been A sakura view, so the comparison is fine, here to delete the material ^ = hinder the input (four) contains (four) fine. The micro-wheel system is provided on the surface 2a of the soil plate 21 and covers the Wei tubular structure 23. In the first embodiment, the brothers are concentrated in the same direction. _ Light in various directions and angles 15 200921948 Schematic diagram of the cross section. The present embodiment is disclosed in the example of the shaft of the third embodiment of the present invention, so that the structure of the same portion η: two has been reversed in the second embodiment and the inner surface of the 4 dragon carrier 29 is recorded. The material used for _ may be, but not limited to, metal driving may be, but not limited to, metal or semiconductor. The reflective layer 30 is shown in the cross section of the fourth embodiment in accordance with (4) m ® . The structure of the light-emitting element 1 (10) of the present embodiment has been disclosed in the first embodiment, so the same parts are to be compared with each other and will not be described herein. This embodiment is characterized in that the tubular turn 23 has a tube wall 25 and a female outer wall 26. The inner side wall 25 is perpendicular to the surface 2la, and the outer tube wall 26 is at an acute angle A with the surface. The angle of the acute angle A may be between 1 and 89 degrees. A reflective layer 31 is formed on the outer tube wall %. The material of the reflective layer 31 may be, but not limited to, a metal or a semiconductor. When the light-emitting wafer 22 emits light of various angles, the light having a large angle penetrates the inner first wall 25 of the s-shaped structure 23 and is reflected by the reflective layer 31 formed on the outer tube wall 26. The design of the tubular structure 23 is used to limit the distribution range of the fluorescent conversion 16 200921948 layer 24, and to suppress the ratio of the large vertical thickness L1 to the maximum horizontal thickness ^ 2 to avoid the light-emitting chip. 22 Mountain - The angle of light is large, because the path through the fluorescent conversion layer 24 is long, and the energy is converted into the yellow light that the fluorescent conversion layer 24 is excited to cause uneven color temperature. Ask. On the other hand, the reflection layer 31 and the angle of the acute angle 控制 are used to reflect the light emitted by the 22 (four) degrees to the light, thereby achieving the effect of turning the light emitted by the light-emitting element into the fiscal direction. Referring to Fig. 11, "Chu η" 昂11图" is a schematic axial cross-sectional view of a fifth embodiment of the present invention. The structure of the illuminating tree (10) of this embodiment has been disclosed in the first embodiment, so the copper portion should be compared and not used as a ship. This embodiment further includes a block 32. The package charm η is a cup-shaped carrier for carrying the substrate 21' and the inside surface of the pick-up device 32 has a dirty-reflecting layer % for illuminating the light emitted from the light-emitting element KX. The material of the cracking carrier 3- may be, but is not limited to, ceramic, metal, plastic or tree. The material of the reflective layer 33 may be, but not limited to, a metal or a semiconductor. The "Phase 12" and "12th" drawings are the axial cross-sections 7F, E, and ® of the sixth embodiment of the present invention. The structure of the hair piece (10) of the present embodiment has been reduced in the first embodiment, so that the _ part is required to be compared with the other. This embodiment is characterized in that the re-oiling light-emitting element (10) is formed on the same substrate 21. °月参', ', I3 图' and '图图' are flowcharts of the first embodiment of the present invention 17 200921948. A method of fabricating a light-emitting element includes: a substrate (step (4)). At base __&_# (step 52). Each has an opening, and the tubular structure is provided with a private light-emitting chip on the surface of the substrate at one end of the two ends, and is tubularly connected; to 10 ξ::==ξ?: m« sigh gamma (4), The way of driving, organic polymer or reading structure is the Huang Tongying process, the laser writing process, and the surname gamma forming. The material that is emitted by the fine material and the light-transformed layer is excited by the light-transmitting structure, but it is not limited to the cut, turn, glass or the mixture. ("", Fig. 14" ""Fig. 14" is a first embodiment of the present invention - a streamer is made. - A method of fabricating a light-emitting element includes: first, providing a heat conducting wire plate (step 61) arranging an illuminating wafer on the surface of the wire (step 62). Forming a tubular structure on the surface having 1 ray, and the tubular structure surrounds the illuminating wafer sub-and each has an opening at each end of the official structure, and the tubular structure is One end of the end; surface (step 63). The fluorescent conversion layer is disposed in the tubular structure and covers the ratio of the maximum vertical thickness of the luminescent wafer to the luminescent wafer at the luminescent wafer and the maximum horizontal thickness 18 200921948 is controlled to 〇·1 to L〇 (Step 64) The material of the substrate may be, but not limited to, ceramic, metal, organic polymer or germanium. The transparent tubular structure is formed by a yellow lithography process, a laser writing process, a stamper, a butterfly or an injection. Forming. The material of the tubular structure is for the light emitted by the hair member to be penetrated by the fluorescent conversion layer. The material of the tubular structure may be, but not limited to, 5; plastic, resin, glass or stone Mixture of Gum and Shixia. Figure 15A of "Fenfen Photo 1" and "Phase 15A" is the sixth process of the sixth embodiment of the present invention. The second step of the production process is shown in FIG. 1A, which is the third step of the production process of the sixth embodiment of the present invention, and the fourth step of the production process is the fourth step of the production process of the sixth embodiment of the present invention. Fig. First, such as "Zipper c, as shown in "Aung 15A", providing a substrate 21 having thermal conductivity. Then, as shown in Fig. 15B", a plurality of tubular structures μ, a base are formed on the surface of the substrate; The two structures each have an opening, and the tubular structure is disposed at the end of the two ends on the surface of the opposite surface 21. Then, as shown in the "Fig. 5", at least the light emitting chip is disposed on the 1 t surface of each tubular structure a. 22. Finally, as shown in "Fig. 15D": the filling #光化层 24 is in the tubular structure 23 and covers the luminescent wafer 22, and the maximum thickness L1 and the maximum level of severity of the fluorescing conversion layer 24 The ratio of 2 is 0·1 to 1〇. Sub 19 200921948 The material of the substrate #是是是是不妓m organic polymer or shixi. The way to form the transparent structure is a yellow lithography process, a laser writing process, a stamper, a butterfly or a ray x. The material of the tubular structure is for the light emitted by the illuminating element The 0 conversion layer is penetrated by the excited light. The material of the tubular structure may be, but not limited to, silicone, resin, glass or a mixture of silicone and alumina. Although the present invention is disclosed in the preferred embodiment of uranium, it is not In order to limit the present invention, any skilled person skilled in the art can make some modifications and retouchings without departing from the spirit and scope of the present invention. Therefore, the scope of protection of the present invention is subject to the patent application attached to this specification. The definition of the model is based on a simple one-chip type white light coffee diagram; = is a conventional multi-wafer type white light ~ figure; schematic; .4 the intention of the first embodiment of the invention; l4A The figure is the shape of the cross section of the camp-like structure of the first embodiment of the present invention. FIG. 4 is a schematic view showing the shape of the cross section of the first embodiment of the present invention. The other 4Cth view of the radial section of the tubular structure is a schematic view of the present invention; 20 200921948 5A is a schematic view of the position of the illuminating wafer in the tubular structure according to the first embodiment of the present invention; FIG. 6A is a schematic view showing the liquid surface shape of the fluorescent conversion layer according to the first embodiment of the present invention; FIG. 6B is a fluorescent conversion layer according to the first embodiment of the present invention; The liquid surface shape is not intended to be another. FIG. 6C is a schematic view of the liquid level of the fluorescent conversion layer according to the first embodiment of the present invention. FIG. 6D is a schematic diagram of a light-emitting element having a small amount of glue; Figure 6F is a schematic diagram of a multi-glued light-emitting element; Figure 6G is a schematic diagram of a small amount of light-emitting elements; Figure 6H is a schematic diagram of a medium-sized light-emitting element; Figure 61 is a multi-glue FIG. 6J is a schematic diagram of a light-emitting component with a small amount of glue The representation of the light-emitting layer in the horizontal slice of the light-emitting wafer θ is measured, and the thickness and the eighth image are the wheel of the second embodiment of the present invention. BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a fourth embodiment of the present invention; FIG. 11 is a fifth embodiment of the present invention; FIG. The schematic view of the cross section of the Yanshi; the fourth aspect of the present invention is a cross section of the sixth embodiment of the present invention. The thirteenth embodiment is the flow chart of the first embodiment of the present invention, and the fourteenth embodiment is the first embodiment of the present invention. 1 is a flow chart. The brother bA diagram is the sixth embodiment of the present invention'; FIG. 1; IL mad music - step 2 step schematic diagram 15B diagram is the map of the present invention; Figure 15c is a sixth embodiment of the present invention; and a method of embodiment. The third step shows that the fifth figure is a drawing of the sixth embodiment of the present invention. [Main component symbol description 10... The fourth step of the process is to indicate the fluorescent conversion layer 22 200921948 13 . . . . ....... LED wafer 14 ......................... Bowl Cup 15 ...................... ...reflecting wall 18a........................LED wafer 18b................. ...LED chip 18c........................LED chip f 19............. ............ Bowl 20.........................Fluorescent conversion layer 21 ..... ....................substrate 21a........................surface 22 .. .......................Lighting chip 22a........................ Front 22b.......................Side\^ 23 ..................... ....tubular structure 23a........................opening 23b................... ... opening 24..............................Fluorescent conversion layer 25............ .............Inside wall 26 .........................Outer wall 23 200921948 28 .. .......................microlens 29 ........................ .Package Vehicle 30 .........................Reverse Ten Layers 31 ................ .........Reflexive f layer 32 ............... ..........Package Vehicle 33..............................Reflective layer 80 ........ .................Low amount of light-emitting elements 81.............................. Amount of light-emitting elements 82.........................Multi-size light-emitting elements 83 ............... ..........Low amount of light-emitting elements 84......................... ......................Multi-size light-emitting elements 86 ..................... ...a small amount of light-emitting elements 87.........................Medium amount of light-emitting elements 88 .......... ...............Multi-glued light-emitting element 100..........................Light-emitting element 111... .....................A large angle of light 112.......................angle Small light 231.......................round 24 200921948 232 .................. ..... quadrilateral 233 .......................hexagonal 234 ................ .......center axis position 235 .......................off-axis position 241 ............ ...........Level 242 .......................Concave curved surface 243 .......... .............Convex surface L1.........................Maximum vertical thickness Degree L2.........................Maximum horizontal thickness 25