TWI343464B - - Google Patents

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Publication number
TWI343464B
TWI343464B TW094112680A TW94112680A TWI343464B TW I343464 B TWI343464 B TW I343464B TW 094112680 A TW094112680 A TW 094112680A TW 94112680 A TW94112680 A TW 94112680A TW I343464 B TWI343464 B TW I343464B
Authority
TW
Taiwan
Prior art keywords
gas
unit
flow path
support member
fixing plate
Prior art date
Application number
TW094112680A
Other languages
English (en)
Chinese (zh)
Other versions
TW200538678A (en
Inventor
Takeichi Akihiro
Aoyama Tatsuhito
Miwa Toshikazu
Inoue Takashi
Original Assignee
Ckd Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ckd Corp filed Critical Ckd Corp
Publication of TW200538678A publication Critical patent/TW200538678A/zh
Application granted granted Critical
Publication of TWI343464B publication Critical patent/TWI343464B/zh

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45561—Gas plumbing upstream of the reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F17—STORING OR DISTRIBUTING GASES OR LIQUIDS
    • F17D—PIPE-LINE SYSTEMS; PIPE-LINES
    • F17D1/00—Pipe-line systems
    • F17D1/02—Pipe-line systems for gases or vapours
    • F17D1/04—Pipe-line systems for gases or vapours for distribution of gas
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67103—Apparatus for thermal treatment mainly by conduction
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E60/00—Enabling technologies; Technologies with a potential or indirect contribution to GHG emissions mitigation
    • Y02E60/30—Hydrogen technology
    • Y02E60/34—Hydrogen distribution

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • General Engineering & Computer Science (AREA)
  • Details Of Valves (AREA)
  • Valve Housings (AREA)
  • Pipeline Systems (AREA)
  • Chemical Vapour Deposition (AREA)
TW094112680A 2004-05-10 2005-04-21 Gas supply integration unit TW200538678A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004140039A JP4567370B2 (ja) 2004-05-10 2004-05-10 ガス供給集積ユニット

Publications (2)

Publication Number Publication Date
TW200538678A TW200538678A (en) 2005-12-01
TWI343464B true TWI343464B (fr) 2011-06-11

Family

ID=35320469

Family Applications (1)

Application Number Title Priority Date Filing Date
TW094112680A TW200538678A (en) 2004-05-10 2005-04-21 Gas supply integration unit

Country Status (5)

Country Link
JP (1) JP4567370B2 (fr)
KR (1) KR101074265B1 (fr)
CN (1) CN100440454C (fr)
TW (1) TW200538678A (fr)
WO (1) WO2005109482A1 (fr)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4753173B2 (ja) * 2005-06-17 2011-08-24 株式会社フジキン 流体制御装置
JP2008014390A (ja) * 2006-07-05 2008-01-24 Hitachi Metals Ltd 集積形流体制御装置
US7807222B2 (en) * 2007-09-17 2010-10-05 Asm International N.V. Semiconductor processing parts having apertures with deposited coatings and methods for forming the same
JP5000469B2 (ja) * 2007-12-05 2012-08-15 株式会社キッツエスシーティー 容器用ブロックバルブ
JP5410173B2 (ja) * 2009-06-30 2014-02-05 Ｃｋｄ株式会社 ガス供給装置
JP5775696B2 (ja) * 2011-01-31 2015-09-09 株式会社フジキン 流体制御装置
JP5559842B2 (ja) * 2012-06-18 2014-07-23 株式会社テムテック研究所 集積ガス供給装置用の平面発熱板およびその製造方法
JP5753831B2 (ja) * 2012-11-29 2015-07-22 株式会社フジキン 流体制御装置
JP6966499B2 (ja) * 2019-03-06 2021-11-17 Ckd株式会社 ガス供給ユニット及びガス供給方法
JP7482533B2 (ja) * 2019-06-28 2024-05-14 株式会社フジキン 流体制御装置
WO2023120402A1 (fr) * 2021-12-22 2023-06-29 株式会社プロテリアル Vaporisateur

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5964254A (en) * 1997-07-11 1999-10-12 Advanced Delivery & Chemical Systems, Ltd. Delivery system and manifold
AU4548999A (en) 1998-06-08 1999-12-30 Advanced Delivery & Chemical Systems, Ltd. Chemical delivery system having purge system utilizing multiple purge techniques
JP2001073144A (ja) * 1999-09-03 2001-03-21 Pioneer Electronic Corp 化学気相成長法における原料供給装置
JP2002173777A (ja) * 2000-12-01 2002-06-21 C Bui Res:Kk Ｃｖｄ装置の金属液体気化ユニット及び気化方法
JP3767897B2 (ja) * 2004-03-01 2006-04-19 シーケーディ株式会社 ガス供給集積ユニット

Also Published As

Publication number Publication date
JP4567370B2 (ja) 2010-10-20
CN1950931A (zh) 2007-04-18
KR20070011549A (ko) 2007-01-24
KR101074265B1 (ko) 2011-10-19
CN100440454C (zh) 2008-12-03
WO2005109482A1 (fr) 2005-11-17
TW200538678A (en) 2005-12-01
JP2005322797A (ja) 2005-11-17

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Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees