TWI341028B - Organic memory devices including organic material and fullerene layers and related methods - Google Patents

Organic memory devices including organic material and fullerene layers and related methods

Info

Publication number
TWI341028B
TWI341028B TW096117450A TW96117450A TWI341028B TW I341028 B TWI341028 B TW I341028B TW 096117450 A TW096117450 A TW 096117450A TW 96117450 A TW96117450 A TW 96117450A TW I341028 B TWI341028 B TW I341028B
Authority
TW
Taiwan
Prior art keywords
memory devices
devices including
related methods
organic material
fullerene layers
Prior art date
Application number
TW096117450A
Other languages
English (en)
Other versions
TW200805644A (en
Inventor
Byeong-Ok Cho
Moon-Sook Lee
Takahiro Yasue
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of TW200805644A publication Critical patent/TW200805644A/zh
Application granted granted Critical
Publication of TWI341028B publication Critical patent/TWI341028B/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B99/00—Subject matter not provided for in other groups of this subclass
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5664—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using organic memory material storage elements
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0009—RRAM elements whose operation depends upon chemical change
    • G11C13/0014—RRAM elements whose operation depends upon chemical change comprising cells based on organic memory material
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0009—RRAM elements whose operation depends upon chemical change
    • G11C13/0014—RRAM elements whose operation depends upon chemical change comprising cells based on organic memory material
    • G11C13/0016—RRAM elements whose operation depends upon chemical change comprising cells based on organic memory material comprising polymers
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/02—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using elements whose operation depends upon chemical change
    • G11C13/025—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using elements whose operation depends upon chemical change using fullerenes, e.g. C60, or nanotubes, e.g. carbon or silicon nanotubes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K19/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic element specially adapted for rectifying, amplifying, oscillating or switching, covered by group H10K10/00
    • H10K19/202—Integrated devices comprising a common active layer
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2211/00—Indexing scheme relating to digital stores characterized by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C2211/56—Indexing scheme relating to G11C11/56 and sub-groups for features not covered by these groups
    • G11C2211/561—Multilevel memory cell aspects
    • G11C2211/5614—Multilevel memory cell comprising negative resistance, quantum tunneling or resonance tunneling elements
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/70—Resistive array aspects
    • G11C2213/72—Array wherein the access device being a diode
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/70—Resistive array aspects
    • G11C2213/77—Array wherein the memory element being directly connected to the bit lines and word lines without any access device being used
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/40—Thermal treatment, e.g. annealing in the presence of a solvent vapour
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/10—Organic polymers or oligomers
    • H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/10—Organic polymers or oligomers
    • H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
    • H10K85/113—Heteroaromatic compounds comprising sulfur or selene, e.g. polythiophene
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/10—Organic polymers or oligomers
    • H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
    • H10K85/114—Poly-phenylenevinylene; Derivatives thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/10—Organic polymers or oligomers
    • H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
    • H10K85/115—Polyfluorene; Derivatives thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/10—Organic polymers or oligomers
    • H10K85/141—Organic polymers or oligomers comprising aliphatic or olefinic chains, e.g. poly N-vinylcarbazol, PVC or PTFE
    • H10K85/146—Organic polymers or oligomers comprising aliphatic or olefinic chains, e.g. poly N-vinylcarbazol, PVC or PTFE poly N-vinylcarbazol; Derivatives thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/20—Carbon compounds, e.g. carbon nanotubes or fullerenes
    • H10K85/211—Fullerenes, e.g. C60
TW096117450A 2006-06-02 2007-05-16 Organic memory devices including organic material and fullerene layers and related methods TWI341028B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020060049897A KR100897881B1 (ko) 2006-06-02 2006-06-02 유기물층 및 버크민스터 플러렌층의 적층을 정보 저장요소로 채택하는 유기 메모리 소자의 제조방법

Publications (2)

Publication Number Publication Date
TW200805644A TW200805644A (en) 2008-01-16
TWI341028B true TWI341028B (en) 2011-04-21

Family

ID=38789052

Family Applications (1)

Application Number Title Priority Date Filing Date
TW096117450A TWI341028B (en) 2006-06-02 2007-05-16 Organic memory devices including organic material and fullerene layers and related methods

Country Status (4)

Country Link
US (1) US7663141B2 (zh)
KR (1) KR100897881B1 (zh)
CN (1) CN101083300B (zh)
TW (1) TWI341028B (zh)

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* Cited by examiner, † Cited by third party
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US20080296662A1 (en) * 2007-05-30 2008-12-04 Gerhard Poeppel Discrete Trap Memory (DTM) Mediated by Fullerenes
KR101290003B1 (ko) * 2011-08-31 2013-07-31 한국과학기술원 플렉서블 메모리 소자 제조방법 및 이에 의하여 제조된 플렉서블 메모리 소자
JP5674520B2 (ja) 2011-03-24 2015-02-25 株式会社東芝 有機分子メモリの製造方法
CN102723439A (zh) * 2011-03-29 2012-10-10 中国科学院微电子研究所 基于有机场效应晶体管的存储单元、存储器及其制备方法
ITBO20110571A1 (it) * 2011-10-06 2013-04-07 Consiglio Nazionale Ricerche Porta logica e corrispondente metodo di funzionamento
WO2014181986A1 (ko) 2013-05-07 2014-11-13 주식회사 엘지화학 플러렌 유도체를 포함하는 유기 전자 소자
KR102089347B1 (ko) 2013-10-08 2020-03-16 경북대학교 산학협력단 비휘발성 메모리 소자 및 이의 제조 방법
US9627058B2 (en) * 2015-06-17 2017-04-18 Macronix International Co., Ltd. Resistance random access memory with accurate forming procedure, operating method thereof and operating system thereof
CN106328809B (zh) * 2016-09-28 2020-09-25 南京工业大学 一种易失性与非易失性混合存储器及其制备方法
CN106601910B (zh) * 2016-12-23 2018-10-09 河北大学 一种有机电极阻变存储器及其制备方法
CN107134526B (zh) * 2017-06-22 2019-10-25 南京工业大学 一种具有普适性的非易失性一次写入多次读取存储器及其制备方法
KR102372207B1 (ko) * 2017-07-27 2022-03-07 삼성전자주식회사 박막 트랜지스터 및 그 제조 방법
CN112201753B (zh) * 2020-12-01 2021-03-23 江汉大学 一种有机电存储器件及其制备方法
CN112608597B (zh) * 2020-12-04 2022-03-04 四川大学 一种高储能密度聚合物复合材料及其制备方法

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US6278127B1 (en) * 1994-12-09 2001-08-21 Agere Systems Guardian Corp. Article comprising an organic thin film transistor adapted for biasing to form a N-type or a P-type transistor
EP1055260A1 (en) * 1998-02-02 2000-11-29 Uniax Corporation Organic diodes with switchable photosensitivity
US6950331B2 (en) * 2000-10-31 2005-09-27 The Regents Of The University Of California Organic bistable device and organic memory cells
US6784017B2 (en) * 2002-08-12 2004-08-31 Precision Dynamics Corporation Method of creating a high performance organic semiconductor device
US7075105B2 (en) 2003-03-19 2006-07-11 Masataka Kano Organic bistable element, organic bistable memory device using the same, and method for driving said organic bistable element and organic bistable memory device
CN1781198A (zh) 2003-04-28 2006-05-31 吕正红 具有富勒烯层的发光器件
JP4192236B2 (ja) 2003-05-02 2008-12-10 独立行政法人産業技術総合研究所 太陽電池
JP4835158B2 (ja) 2003-12-18 2011-12-14 富士電機株式会社 スイッチング素子
US7170779B2 (en) 2004-06-17 2007-01-30 Canon Kabushiki Kaisha Non-volatile memory using organic bistable device
EP1805758A4 (en) * 2004-10-28 2009-09-09 Regents Of The University The ORGANICALLY COMPLEX THIN FILM FOR NON-VOLATILE MEMORY DEVICES
KR20060070200A (ko) * 2004-12-20 2006-06-23 현대자동차주식회사 연료의 안정적 공급을 위한 리저버컵을 구비한 연료탱크
KR100990291B1 (ko) * 2004-12-28 2010-10-26 삼성전자주식회사 덴드리머를 이용하는 메모리소자

Also Published As

Publication number Publication date
CN101083300B (zh) 2010-09-01
US7663141B2 (en) 2010-02-16
TW200805644A (en) 2008-01-16
US20070278482A1 (en) 2007-12-06
KR100897881B1 (ko) 2009-05-18
CN101083300A (zh) 2007-12-05
KR20070115441A (ko) 2007-12-06

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