TWI339861B - Method for etching single wafer - Google Patents

Method for etching single wafer

Info

Publication number
TWI339861B
TWI339861B TW096103355A TW96103355A TWI339861B TW I339861 B TWI339861 B TW I339861B TW 096103355 A TW096103355 A TW 096103355A TW 96103355 A TW96103355 A TW 96103355A TW I339861 B TWI339861 B TW I339861B
Authority
TW
Taiwan
Prior art keywords
single wafer
etching single
etching
wafer
Prior art date
Application number
TW096103355A
Other languages
English (en)
Other versions
TW200739718A (en
Inventor
Sakae Koyata
Tomohiro Hashii
Katsuhiko Murayama
Kazushige Takaishi
Takeo Katoh
Original Assignee
Sumco Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumco Corp filed Critical Sumco Corp
Publication of TW200739718A publication Critical patent/TW200739718A/zh
Application granted granted Critical
Publication of TWI339861B publication Critical patent/TWI339861B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30604—Chemical etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3063—Electrolytic etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002—Preparing wafers
    • H01L21/02005—Preparing bulk and homogeneous wafers
    • H01L21/02008—Multistep processes
    • H01L21/0201—Specific process step
    • H01L21/02019—Chemical etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67075—Apparatus for fluid treatment for etching for wet etching
    • H01L21/6708—Apparatus for fluid treatment for etching for wet etching using mainly spraying means, e.g. nozzles
TW096103355A 2006-01-31 2007-01-30 Method for etching single wafer TWI339861B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2006021900 2006-01-31

Publications (2)

Publication Number Publication Date
TW200739718A TW200739718A (en) 2007-10-16
TWI339861B true TWI339861B (en) 2011-04-01

Family

ID=38327334

Family Applications (1)

Application Number Title Priority Date Filing Date
TW096103355A TWI339861B (en) 2006-01-31 2007-01-30 Method for etching single wafer

Country Status (8)

Country Link
US (1) US8466071B2 (zh)
EP (1) EP1981072A4 (zh)
JP (1) JP4974904B2 (zh)
KR (1) KR20080082010A (zh)
CN (1) CN101379599B (zh)
MY (1) MY148726A (zh)
TW (1) TWI339861B (zh)
WO (1) WO2007088755A1 (zh)

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US7368285B2 (en) 2001-03-07 2008-05-06 Senomyx, Inc. Heteromeric umami T1R1/T1R3 taste receptors and isolated cells that express same
US7955982B2 (en) * 2006-01-20 2011-06-07 Sumco Corporation Method for smoothing wafer surface and apparatus used therefor
JP2008218545A (ja) * 2007-03-01 2008-09-18 Sumco Corp ウェーハの枚葉式エッチング装置
JP2010003847A (ja) * 2008-06-19 2010-01-07 Sumco Corp 半導体ウェーハの製造方法
JP5026356B2 (ja) * 2008-06-26 2012-09-12 Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 拡散ウェーハの製造方法
JP2012186187A (ja) * 2009-07-08 2012-09-27 Sharp Corp エッチング方法およびエッチング処理装置
JP6064875B2 (ja) * 2013-11-25 2017-01-25 東京エレクトロン株式会社 液処理装置、液処理方法及び記憶媒体
JP6027523B2 (ja) * 2013-12-05 2016-11-16 東京エレクトロン株式会社 基板処理装置及び基板処理方法並びに基板処理プログラムを記録した記録媒体
US9837259B2 (en) 2014-08-29 2017-12-05 Sunpower Corporation Sequential etching treatment for solar cell fabrication
TWI611507B (zh) * 2014-10-23 2018-01-11 Acm Res Shanghai Inc 矽通孔背面露頭的方法和裝置
US10332761B2 (en) 2015-02-18 2019-06-25 SCREEN Holdings Co., Ltd. Substrate processing apparatus
US10403517B2 (en) 2015-02-18 2019-09-03 SCREEN Holdings Co., Ltd. Substrate processing apparatus
JP6504540B2 (ja) * 2015-02-25 2019-04-24 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置
JP6509583B2 (ja) * 2015-02-25 2019-05-08 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置
JP6485904B2 (ja) * 2015-03-03 2019-03-20 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置
US10283384B2 (en) * 2015-04-27 2019-05-07 Taiwan Semiconductor Manufacturing Co., Ltd. Method for etching etch layer and wafer etching apparatus
JP6603487B2 (ja) * 2015-06-22 2019-11-06 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置および基板処理方法
JP2018147908A (ja) * 2015-07-27 2018-09-20 東京エレクトロン株式会社 基板処理方法および基板処理装置
TWI629720B (zh) * 2015-09-30 2018-07-11 東京威力科創股份有限公司 用於濕蝕刻製程之溫度的動態控制之方法及設備
KR20180013327A (ko) * 2016-07-29 2018-02-07 세메스 주식회사 기판 처리 장치 및 기판 처리 방법
JP6304364B2 (ja) * 2016-12-26 2018-04-04 東京エレクトロン株式会社 液処理装置、液処理方法及び記憶媒体
JP6910164B2 (ja) * 2017-03-01 2021-07-28 東京エレクトロン株式会社 基板処理装置および基板処理方法
KR101977386B1 (ko) * 2017-06-30 2019-05-13 무진전자 주식회사 웨이퍼 식각 장치 및 이를 사용하는 방법
CN111081585B (zh) * 2018-10-18 2022-08-16 北京北方华创微电子装备有限公司 喷淋装置及清洗设备
JP7329391B2 (ja) 2019-08-23 2023-08-18 東京エレクトロン株式会社 基板処理方法及び基板処理システム
US11518937B2 (en) * 2019-12-25 2022-12-06 Tokyo Ohka Kogyo Co., Ltd. Etching solution and method for manufacturing semiconductor element
US20230066183A1 (en) * 2021-08-30 2023-03-02 Taiwan Semiconductor Manufacturing Company Ltd. Method of fabricating a semiconductor structure and semiconductor structure obtained therefrom

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JPS5846643A (ja) 1981-09-12 1983-03-18 Mitsubishi Electric Corp ウエハ処理法
TW346649B (en) * 1996-09-24 1998-12-01 Tokyo Electron Co Ltd Method for wet etching a film
JPH11135464A (ja) 1997-10-30 1999-05-21 Komatsu Electron Metals Co Ltd 半導体ウェハの製造方法
KR100271769B1 (ko) 1998-06-25 2001-02-01 윤종용 반도체소자의 제조방법, 이를 위한 반도체소자 제조용 식각액조성물 및 반도체소자
US6232228B1 (en) * 1998-06-25 2001-05-15 Samsung Electronics Co., Ltd. Method of manufacturing semiconductor devices, etching composition for manufacturing semiconductor devices, and semiconductor devices made using the method
EP1313135A1 (en) * 2000-06-29 2003-05-21 Shin-Etsu Handotai Co., Ltd Method for processing semiconductor wafer and semiconductor wafer
KR20030021183A (ko) * 2000-06-30 2003-03-12 엠이엠씨 일렉트로닉 머티리얼즈 인코포레이티드 실리콘 웨이퍼 에칭 공정
JP2002064079A (ja) * 2000-08-22 2002-02-28 Disco Abrasive Syst Ltd エッチング装置
JP2004006672A (ja) * 2002-04-19 2004-01-08 Dainippon Screen Mfg Co Ltd 基板処理方法および基板処理装置
JP2004111668A (ja) * 2002-09-19 2004-04-08 Citizen Watch Co Ltd 基板処理装置及び基板処理方法
JP2004335923A (ja) * 2003-05-12 2004-11-25 Sony Corp エッチング方法およびエッチング装置
FR2886053B1 (fr) * 2005-05-19 2007-08-10 Soitec Silicon On Insulator Procede de gravure chimique uniforme
EP1927130A1 (en) 2005-09-13 2008-06-04 Nxp B.V. A method of and an apparatus for processing a substrate
JP5134774B2 (ja) * 2006-01-16 2013-01-30 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
JP4708243B2 (ja) * 2006-03-28 2011-06-22 東京エレクトロン株式会社 液処理装置および液処理方法ならびにコンピュータ読取可能な記憶媒体

Also Published As

Publication number Publication date
MY148726A (en) 2013-05-31
EP1981072A1 (en) 2008-10-15
CN101379599B (zh) 2011-05-04
EP1981072A4 (en) 2009-01-21
JP4974904B2 (ja) 2012-07-11
KR20080082010A (ko) 2008-09-10
US20090004876A1 (en) 2009-01-01
WO2007088755A1 (ja) 2007-08-09
CN101379599A (zh) 2009-03-04
TW200739718A (en) 2007-10-16
US8466071B2 (en) 2013-06-18
JPWO2007088755A1 (ja) 2009-06-25

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MM4A Annulment or lapse of patent due to non-payment of fees