TWI334190B - Substrate transportation processing apparatus and method of trouble measures of substrate transportation processing apparatus and computer readable medium encoded with a program for trouble measures of substrate transportation processing apparatus - Google Patents

Substrate transportation processing apparatus and method of trouble measures of substrate transportation processing apparatus and computer readable medium encoded with a program for trouble measures of substrate transportation processing apparatus Download PDF

Info

Publication number
TWI334190B
TWI334190B TW095142780A TW95142780A TWI334190B TW I334190 B TWI334190 B TW I334190B TW 095142780 A TW095142780 A TW 095142780A TW 95142780 A TW95142780 A TW 95142780A TW I334190 B TWI334190 B TW I334190B
Authority
TW
Taiwan
Prior art keywords
substrate
module
processing
processed
exposure
Prior art date
Application number
TW095142780A
Other languages
Chinese (zh)
Other versions
TW200735251A (en
Inventor
Tomohiro Kaneko
Akira Miyata
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Publication of TW200735251A publication Critical patent/TW200735251A/en
Application granted granted Critical
Publication of TWI334190B publication Critical patent/TWI334190B/en

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67242Apparatus for monitoring, sorting or marking
    • H01L21/67271Sorting devices
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67155Apparatus for manufacturing or treating in a plurality of work-stations
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67155Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/6719Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the processing chambers, e.g. modular processing chambers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67155Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67196Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the transfer chamber
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67155Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67207Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process
    • H01L21/67225Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process comprising at least one lithography chamber
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67739Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
    • H01L21/67742Mechanical parts of transfer devices
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67739Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
    • H01L21/67745Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber characterized by movements or sequence of movements of transfer devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Robotics (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)

Description

1334190 九、發明說明: 【發明所屬之技術領域】 本發明係關於-基板運送處理裝置’將例如半導體晶圓或 fD玻璃基板祕板於多數處_組進行分散處理,並進行曝光 前處理及曝光後加熱處理,尤_—基板運送處理裝置,具 任一處理模組有障礙發生之情形的對策。 【先前技術】 良·τ Ϊ ’於半導體晶®或LCD(液晶顯示麟基板之製造, ί ί ΪΪ Ϊ (氧化姻錫’IndiUmΤώ 〇xide)之薄膜或電極 光微影技術。該光微影技術,採用了基板運送處理 ίί提ίΐϊ送到多數處理模組’將光阻塗布於基板,並將 該等曝先,進一步進行顯影處理。 〜模ϊ種裝置,以如下方式構成,包含:搬入用度 將基板於各敎帛奴.處^ t +板;及’運送模組’ 之基板分$沐、軍、其谷糟由運迗杈組將來自於搬入用匣盒模組 分散产理月:s 5丄各處理模組’於各多數處理模組將基板進行 刀散處理’亦㈣光麵理祕絲加熱處理。 分散板Ϊ送處理裝置中’於將基板在多數處理模組 =發生,則會將運送 =====組^置= \tT^ ?;, t::^9·50948 獻2]曰本特開平1Μ_3號公報(專利申請範圍) 【發明内容】 (發明欲解決之問題) 1334190 觸放?型祕劑之基板’為藉由曝光處理使抗钱 ^=發1觸媒反應,舰❹熱處舰將電關案之線寬保持為 J而=基板分散於多數模組而處理之步驟,由於處理時 ί 2 ’因此,如果由於在某個模組有障礙發生,而: Ϊίίΐίίί ΐ運送對象變更為其他正常模組,會有基板運送 ,會發生從進行曝光處理至進行加熱處理為止之: 不一致’無法將電路圖案之線寬維持為固定的問題。 吁 一致====_,t細細控制的不 本發财鑑於上述情事而生,目料提供 為仍ϊ將從進行基板之曝光處理至進行力: 理裝置及其障賴策方法轉礙縣 板^處 (解決問題之方式) 為了解決上述問題,本發明之基板運送處理裝置,包 二,ίΐΓ ’收容多片未處理之被處理板;多數處理模植, :理絲讀光前後職處縣板施 數 處理基板在各模組間運送;藉由上“ίΪΪ ^模組之被處理基板分散並運 且 於各==^曝光前處理及曝光後上, ;:---Ϊ^ίίίϊ^ 、'任處理模組發生障礙之情形,將曝#接*、dr ί^Ϊίίίί運送到上述緩衝模組之未占用部, 止將曝^之被處理基板往曝光處理部之運送,同時,運】^ 1334190 ίίίϊϊ^ ==生障礙之處__修復之情形,將 熱處」未被進行上述曝光後加 理(申請專利細第㈤。%如其他被處理基板之運送、處 對策方“基板S;i方ί含為置中之障礙 ==;定處1;.及多數運送模“== S5EF==^ 將上述各模_籌控制之控制機二 轉礙之修復’基於上述控制機構之控制ί號 板於i 處Ϊ模礙之情形,將曝光後之被處理基 =ΐΐ處後運运到上述緩衝模組之未占用部,並暫#止 之被處理基板運送到曝光處理部,同時,運送到上^緩 到ί障礙發生之處理模組修復的情形,將已運送 理後:ϊίίϊ未占用部的被處理基板進行上述曝光後加熱處 ===,_,進彳伽嫩版運送、處理(中 處裡,上龍處理基板只要是經轉光祕理、曝光 ΐϊί ΐ熱處理之基板即可,可為任意基板,較佳為,上 3處理級’為塗布有化轴对抗_之絲(帽 弟2、9項)。 ^ ’上述控機構’較佳為具有町魏ϋ貞酬於任一 ,理模組發生障礙之情形’涵上述緩衝模組之未纟用部, ΐΐ申項)。又’於上述處理模組發生之障礙, 車又佳為L3將破處理基板運送到處理模組間之運送模组的障礙(申 90 請專利範圍第5、n項) 之接、、,較I仏為將上述被處理基板在加熱處理後進行冷卻處理, 後運运到緩衝模組(申請專利範圍第3、12項)。 n t較佳為,藉由上述控制機構,能使被處理基板從曝光後 兮處理為止之時間控制為固定(申請專利範圍第6、13項)。^ 在少ΐα’本發明之障賴糾程式,係實施上述障礙對策方法者, =基板運送處理裝置中之障礙對策贿式,該基板運送裝置, 搬入用ϋ盒模組,收容多片未處理之被處理基板;多數處 Β 、’艺被處理基板之曝光前後對被處理基板施以既定處理; 夕數運迗模組,將被處理基板在各模組間運送;藉由上述運送 來自上碰人龍盒模組之被處理基板分散並運送到各處 ^、,且,於各處理模組,被處理基板進行曝光前處理及曝光後加 :,,、處理’該障礙對策陳式之特徵在於令電腦實施以下步驟:偵 —處理模_生續細轉;將曝光狀被處理基板於 ,熱處理魏送到上述緩衝漁之未Μ部之频;將被處理基 板,曝光歧部之運送暫畴止的步驟;將曝光前處雖之被處 =板運_上賴補敗倾;触有障礙發生之處理模組 k復的步驟;於上述處理模組修復後,將已運送到上述緩衝模組 之未占用部的被處理基才反進行上述曝光後加熱處理之後的運送、 處理的步驟;及進行已運送到上述緩衝模組之未占用部的被處理 基板以外的其他被處理基板的運送、處理的步驟(申請專利範 15 項)。 藉由如上述構成,於將藉由運送模組而來自於搬入用匣盒模 組之被處理基板對各處理模組分散運送,並且於各多數處理模組 將被^理基板進行分散處理,亦即曝光前處理及曝光後加熱處理 之狀態,如於任一處理模組有障礙發生,則控制機構偵測障礙。 並迠基於控制機構之控制信號,於偵測到在任一處理模組發生障 1334190 礙,情形,將曝光後之被處理基板於加執處理後運送 & ίί被處理基板對曝光處理部之運送ί時 光:熱處理後之運送、處理’同時進: (發明之效果) :明^於以上述方式構成,能得到像以下效果。 杯一 申請專·圍第卜6、8、13項之發明,在_到於1334190 IX. Description of the Invention: [Technical Field] The present invention relates to a substrate transport processing apparatus that performs, for example, a semiconductor wafer or an fD glass substrate in a plurality of places, and performs pre-exposure processing and exposure. After the heat treatment, in particular, the substrate transport processing device has a countermeasure against the occurrence of an obstacle in any of the processing modules. [Prior Art] Liang·τ Ϊ 'film or electrode photolithography technology for semiconductor crystal or LCD (manufacturing of liquid crystal display lining substrate, ί ΪΪ Ϊ (oxidized sulphur tin 'IndiUm Τώ ide xide). The substrate transport processing is applied to a plurality of processing modules to apply a photoresist to the substrate, and the exposure is further developed. The mold device is configured as follows, including: loading The substrate is placed on each of the slaves. The substrate of the 'transport module' is divided into $mu, the army, and its grain is transported by the Yunyu group. :s 5丄 Each processing module 'sludges the substrate in each of the majority of the processing modules' (4) smoothing and polishing the filaments. The dispersing plate is sent to the processing device in the majority of the processing modules. , will be shipped ===== group ^ set = \tT ^ ?;, t:: ^9·50948 2] 曰本特开平1Μ_3 bulletin (patent application scope) [Summary of the invention] (invention to solve The problem) 1334190 The substrate of the touch-type agent is made to resist the money by exposure processing ^= Sending a catalyst reaction, the ship's hot ship keeps the line width of the electric switch case as J and = the substrate is dispersed in most modules and the processing steps are due to the processing ί 2 ' Therefore, if there is a module The obstacle occurs, and: Ϊ ΐ ΐ ΐ ΐ 变更 变更 ΐ ΐ ΐ ΐ ΐ ΐ ΐ ΐ ΐ ΐ ΐ ΐ ΐ ΐ ΐ ΐ ΐ ΐ ΐ ΐ ΐ ΐ ΐ ΐ ΐ ΐ ΐ ΐ ΐ ΐ ΐ ΐ ΐ ΐ ΐ ΐ ΐ ΐ ΐ ΐ ΐ ΐ ΐ ΐ ΐ ΐ ΐ ΐ ΐ Consistent ====_, t fine control of the lack of money in view of the above circumstances, the material is expected to be from the exposure processing of the substrate to the force: the device and its obstacles to the county In order to solve the above problems, the substrate transport processing apparatus of the present invention, package two, ΐΓ 收容 accommodating a plurality of unprocessed processed boards; most of the processing molds,: before and after the reading of the silk The processing plate of the county plate is transported between the modules; the substrate to be processed is dispersed and transported by the upper layer and the film is processed before exposure and exposure; :---Ϊ^ίίίϊ ^, '任处理模In the event of an obstacle, the device will be transported to the unoccupied portion of the buffer module, and the substrate to be processed will be transported to the exposure processing unit. At the same time, ^ 1334190 ίίίϊϊ^ = = where the obstacle occurs __ in the case of repair, the heat is not taken after the above exposure (application for patent (5). %), such as the transport of other substrates to be processed, the countermeasures "substrate S; i For the middle of the obstacle ==; fixed at 1; and most of the transport mode "== S5EF==^ The control of the above-mentioned control of the control of the two models" is based on the control of the above control mechanism i is in the case of impediment, after the exposed substrate is processed, transported to the unoccupied portion of the buffer module, and the processed substrate is transported to the exposure processing unit, and transported to the top. ^When the processing module is repaired, the situation will be corrected: ϊίίϊ The unprocessed substrate is subjected to the above-mentioned post-exposure heating ===, _, into the 彳 嫩 嫩 version of the transport, processing (medium In the office, the processing of the substrate is as long as it is translucent, exposed, and heat treated. Substrate can be any substrate, preferably, the processing stage 3 'is coated with the axis of the wire against the _ (2,9 brother cap item). ^ 'The above-mentioned control agency' is preferably a case where the town has a reward for any one, and the module has an obstacle, and the unused portion of the buffer module is included in the application. In addition, in the obstacles that occur in the above-mentioned processing module, the car is also the obstacle for the L3 to transport the damaged substrate to the transport module between the processing modules (the 90th and nth items of the patent scope). I仏 is to heat-treat the substrate to be processed, and then transport it to the buffer module (items 3 and 12 of the patent application). Preferably, n t is controlled by the control means to control the time from the post-exposure processing to the substrate to be processed (items 6 and 13 of the patent application). ^ In the case of the above-mentioned obstacle measures, the obstacle-resistance method of the present invention is the obstacle countermeasure method in the substrate transport processing device, the substrate transport device, the cassette module for loading, and the plurality of unprocessed cases are accommodated. The substrate to be processed; a plurality of places, 'the substrate to be processed is subjected to a predetermined process before and after exposure; and the substrate is transported between the modules; The substrate to be processed of the touch box module is dispersed and transported to various places, and, in each processing module, the substrate to be processed is subjected to pre-exposure processing and post-exposure addition, and the process is characterized by Let the computer implement the following steps: the detection-processing mode is continued; the exposed substrate is processed, and the heat treatment is sent to the frequency of the buffered fish; the substrate to be processed and the exposure portion are transported. The step of the treatment; the step of the exposure before the exposure = the board is _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ Group The processing unit of the occupied portion reverses the step of transporting and processing after the post-exposure heat treatment; and the transport and processing of the other processed substrate other than the substrate to be processed that has been transported to the unoccupied portion of the buffer module Step (Apply for patents 15). According to the above configuration, the substrate to be processed from the loading cassette module by the transport module is dispersed and transported to each of the processing modules, and the processed substrate is dispersed in each of the plurality of processing modules. That is, the state of pre-exposure treatment and post-exposure heat treatment, if any obstacle occurs in any of the processing modules, the control mechanism detects the obstacle. And based on the control signal of the control mechanism, it is detected that the obstacle is blocked in any of the processing modules. In the case, the exposed substrate is transported after the processing and the substrate is transported to the exposure processing unit. ί 时光:Transportation and treatment after heat treatment 'At the same time: (Effect of the invention): The composition is as described above, and the following effects can be obtained. Cup One Application for the invention of the second, the eighth, the third, the third, the

=處理她發生障礙之情形,由於料光後之被處理基J、 熱處理後運送到緩衝模組之未占用部, I J 行加熱處理為止之日销制定,能使電路 ’於伽到在處理模組發生障礙之情形,將曝光前之 破處理基板職光處理部的魏暫時停止,_料到緩 組’於憤測至化有障礙發生之處理模組修復的情形,將已、 j鋪=未占用部的被處理基板進行上述曝光後加熱處= 運达、處理,同時’進行其他被處理基板之運送 部組有障礙發生之情形,仍能順暢實施=理 基板之運歧處理,且維持週期時間㈣, (2) 依照中請專利範圍第2、3、7、9、i2、14 產里^ ,防止經過曝光後加熱處理之被處理基板由於加轨處理天及 應’例如化學放大型抗姓劑的酸觸媒反應,因此,在$ 反 更此谋求處理之安定化及裝置可靠性之提高。 (3) 依照申請專利範圍第4、1〇項之發明,由於控 =到在任-處理模組發生障礙之情形’能預約緩衝模組之未占 運於$光部至曝光後加熱處理之所自有被處理基板= Dealing with the situation in which she has an obstacle, due to the treatment of the substrate J after the light, the heat treatment and transported to the unoccupied part of the buffer module, IJ line heat treatment until the date of the sale, the circuit can be gamified to the processing mode In the case of an obstacle in the group, the Wei of the processing light of the substrate before the exposure is temporarily stopped, and it is expected that the treatment module will be repaired when the treatment module is in the process of anger and dysfunction. The substrate to be processed in the unoccupied portion is subjected to the above-described post-exposure heating unit = delivery and processing, and at the same time, the situation in which the transport portion of the other processed substrate is hindered can be smoothly performed. Cycle time (4), (2) According to the 2nd, 3rd, 7th, 9th, and 2nd, 14th production range of the patent scope, the substrate to be treated after the exposure and heat treatment is prevented from being subjected to the processing of the rail and the chemical amplification type. The acid-catalyst reaction of the anti-surname agent, therefore, the stability of the treatment and the improvement of the reliability of the device. (3) According to the invention of the fourth and first paragraphs of the patent application scope, because the control = the obstacle in the case of the in-service module, the reserved buffer module can be reserved for the heat treatment from the light portion to the post-exposure treatment. Self-contained substrate

ΐ 在上述⑴〜(2)以外,更能謀求HIM 冋,同時4未裝置可靠性提高。 A /生里诙 1334190 r忠Γ 專利範圍第5、11項之發明,於處理模組發生之 二2於l含在處理模組間運送被處理基板之運送模“ 礙’因此能夠因應於所有被處理基板之處理中 、因早 上述⑴〜⑶以外,更能謀求裝置之可無進因此’在 【實施方式】 (實施發明之最佳形態) =’縣糾之最佳實_g祕所 =滅狀+¥MaaH之㈣射布H顯影處理系統之 圖1顯示應用了本發明基板運送處理裝置 餘劑塗布•曝光•顯影處理系統的概略平面圖。牛¥體日日囫的抗 上述抗蝕劑塗布·曝光·顯影處理系統(以下稱 如圖1中所*,包含:搬入用£盒模組i,收容多數 處理基板辭導體·贾町晶圓π; ^容處理完畢之晶圓W的搬出賴盒模組2 ;處理搬出 對晶圓w施以既定處理之後述多數處理模組;曝 繁Ί 面部6,配置於搬入·搬出部3與處理部4之 ,第1界ΐ In addition to the above (1) to (2), HIM 更 can be further improved, and 4 devices are not improved in reliability. A / 生里诙1334190 r loyalty The invention of the scope of the patents No. 5, 11 occurs in the processing module, and the transport module that transports the substrate to be processed between the processing modules is “obstructed” and therefore can be adapted to all In the processing of the substrate to be processed, it is possible to further improve the device in addition to the above (1) to (3). Therefore, in the [Embodiment] (the best mode for implementing the invention) = 'The best practice in the county _g secret place Fig. 1 shows a schematic plan view of a substrate coating/exposure/development processing system to which the substrate transport processing device of the present invention is applied. The anti-corrosion resistance of the bovine body The coating, exposure, and development processing system (hereinafter referred to as * in FIG. 1 includes: a cassette module i for loading, a plurality of processing substrate vocal conductors, and a gamma wafer π; The cartridge module 2 is removed, and a plurality of processing modules described later are applied to the wafer w, and the surface portion 6 is placed on the loading/unloading unit 3 and the processing unit 4, and the first boundary is disposed.

由配置於處理部4與曝絲5之間的2健塊,|面部二 7a及辅助界面部凡所構成。 P主界面。P 又’上述處理部4,於對向之位置,具備各 模組:塗布模組U,於晶圓W塗布抗钱劑;列 ,後之顯影處理。又,處理部4,於與第丨界面g 6鄰^之= 以广疊層之狀態配置:黏附模組13,將晶圓w = ·’ 及弟2加熱板模組15,將顯影處理後之m匕^ 第2界面部7與主界面部7a鄰接之位置,衫段mm於 第1加熱板模組14,將已塗布抗姓劑之晶圓%曰配置. 光後烘烤敝16,進行賴過曝光處歡晶_ w巾 11 1334190 抗钱劑誘發酸觸媒反應用之加熱;及冷卻模組17,進行防止酸觸 媒反應用之冷卻。又,也可將設置冷卻模組17,改為 烤模組16内併設冷卻模組n,於兩者之間傳遞晶圓 處理部4之中心部,將晶圓W在上述塗布模組u、顯影模組、 黏附模組13、第1及第2加熱板模組14、15及曝光後烘^模组 16之間傳遞之主運送模組20,以於水平之χ、γ方向及旋_盥 錯直之Ζ方向移動自如地配置。 於上述第1界面部6,將晶圓W在配置於搬入•搬出部3之 .搬入用或搬出用匣盒模組卜2之間傳遞的第丨運送模組31,於水 平X、Υ方向及旋轉0及鉛直之2:方向移動自如地配設。 第1運送模、组3卜將收容於搬入賴金模組!内之未處理』圓^ 取^,運送*到黏附模組13,藉由黏附模組13將晶圓评施以疏水The two blocks, the face 2a and the auxiliary interface, which are disposed between the processing unit 4 and the exposure wire 5, are configured. P main interface. In addition, the processing unit 4 includes the respective modules: the coating module U, and the anti-money agent is applied to the wafer W; and the development process is followed by the processing. Further, the processing unit 4 is disposed adjacent to the second interface g 6 in a state of being superposed and laminated: the adhesion module 13 is used, and the wafer w = · ' and the second heating plate module 15 are processed. m匕^ The position where the second interface portion 7 is adjacent to the main interface portion 7a, the shirt segment mm is placed on the first heating plate module 14, and the wafer of the anti-surname agent is coated with %%. The exposure is performed at the exposure point _ w towel 11 1334190 The anti-money agent induces heating for the acid catalyst reaction; and the cooling module 17 performs cooling for preventing the acid catalyst reaction. Moreover, the cooling module 17 may be provided, and the cooling module n may be disposed in the baking module 16 to transfer the central portion of the wafer processing unit 4 therebetween, and the wafer W may be in the coating module u, The main transport module 20 transmitted between the developing module, the adhesive module 13, the first and second heating plate modules 14, 15 and the post-exposure bake module 16 for horizontal χ, γ direction and rotation _ It is easy to move in the direction of the wrong direction. In the first interface unit 6, the first transport unit 31 that transfers the wafer W between the loading/unloading unit 3 and the loading/unloading cassette module 2 is in the horizontal X and Υ directions. And rotation 0 and vertical 2: The direction is free to move. The first transport die and the group 3 will be housed in the reloading module! The unprocessed inside circle ^ is taken, transported* to the adhesion module 13, and the wafer is evaluated by the adhesion module 13 to be hydrophobic

Hi ’並错由第2加熱板模、组15,將顯影處理後之晶圓W施以 °,、、、處理後,將第2加熱板模組15内之晶圓w藉由第丨運 組31接取,並運送(收容)至搬出用匣盒模組2。 、 又’於上述第2界面部7之主界面部7a,配設有 3將塗布有抗侧之晶圓w周緣的抗钕劑除去;3 H吏在與曝光部5之間傳遞的晶圓W暫時待機;第2運送 X、Y方向及錯直之Z方向移動,將晶圓二 與緩賊組5_述第1或第2傳遞模 邱,!:/夕$ 傳^。又,於主界面部與輔助界面部7b之區隔 二:Ϊ二狀態配置:第1傳遞模組61,接取從主界面部 第2傳遞模㈣,接取從辅助界面部- 述第1或乃’配設有:第3運送模組33 ’將晶圓在上 V μ 遞杈組61 ' 62與曝光部5之間搬出入。 組12等處理m之^理系統甲,上述塗布模組η、顯影模 >5盆侦所古πΐ、主運迗杈組20、第1〜第3運送模組31〜33、 '、 吴、、且,係以電連接於為控制機構的電腦的中央演算處 12 1334190 擇或切換(變靖之程式,如後所述,伤^各 策。曰® W之運运步驟及處理步驟為最適步驟的方式,施以障礙對 程*式f成之處㈣統,係基於執行以上述CRI70 制信號,以像以下之步尋職_進行晶圓更)的控 首先,配设於第1界面部6之第丨運送模袓Μ, 入用E盒模組1内之未處理晶陳取出,將取於搬 到黏附模組13,藉由黏附模組13進行晶、疏::運f 過疏水化處奴晶圓w,藉由主運魏板的 後,依序搬人多數,例如2台塗布模組„。於該13 ^出 在晶圓W表面以均勻膜厚塗布抗蝕劑。、° 土 、'、、内, =抗,劑之後,主運送模組20將晶圓〜從 ί 入多數,例如3台第1加熱板模組Μ内Hi' is wrongly applied to the wafer W after the development process by the second heating plate mold and the group 15, and after processing, the wafer w in the second heating plate module 15 is transported by the second The group 31 is picked up and transported (accommodated) to the carry-out cassette module 2. Further, in the main interface portion 7a of the second interface portion 7, the anti-cracking agent for removing the periphery of the wafer w coated with the anti-side is disposed; and the wafer transferred between the portion and the exposed portion 5 W temporarily stands by; the second transport moves in the X direction in the X and Y directions and the straight direction, and the wafer 2 and the thief group 5 are described as the first or second transfer mode! : / 夕 $ pass ^. Further, the main interface portion and the auxiliary interface portion 7b are separated from each other by a second state: the first transfer module 61 receives the second transfer mode from the main interface portion (four), and picks up the auxiliary interface portion - the first Alternatively, the third transport module 33' is disposed to carry the wafer between the upper V μ transfer group 61' 62 and the exposure unit 5. Group 12, etc. processing system A, the above coating module η, developing mold > 5 basin detection ancient π ΐ, main transport group 20, first to third transport modules 31 to 33, ', Wu And, it is electrically connected to the central computer of the control unit 12 1334190 to select or switch (the program of change, as described later, the injury policy). 运® W transport steps and processing steps are optimal The method of the step, the obstacle is applied to the process of the formula (four) system, based on the execution of the above-mentioned CRI70 signal, with the following steps to search for the job _ wafer first), first set in the first interface The first transport module of the part 6 is taken out, and the unprocessed crystals in the E-box module 1 are taken out, and are taken to the adhesion module 13 for crystallizing and thinning by the adhesion module 13: The hydrophobized slave wafer w, after the main transport of the Wei plate, sequentially moves a large number, for example, two coating modules „. The photoresist is coated on the surface of the wafer W with a uniform film thickness. , ° soil, ',, inside, = resistance, after the agent, the main transport module 20 will wafer ~ from ί into the majority, for example, 3 sets of first heating plate module

=烘烤處理。藉此’從晶圓界上之_膜將殘 預烘烤結束後,第1加熱板模組14内之晶圓w, 部7a内之第2運送模組32取出,搬入周邊曝光模組J面 晶圓W於邊緣部接受曝光處理。 、,周,曝光處理結束後’周邊曝絲*4Q内之晶圓w 2運送模組32取出’傳遞給第1傳遞模組6卜接著 ^ 7b内之弟3運送模組33接取第i傳遞模組61内 1 = 入曝光部5内。 亚搬 於曝光部5之曝光處理結束後,第3運送模組33, 5内接取晶圓W,將接取之晶圓W運送到第2傳遞模組必接九著p 13 1334190 第2運送模組32從第2傳遞模組62接 焕烤模組16,藉由曝光後烘烤模电16曰曰^^到曝光後 型劑中之酸觸媒反應。因此,從曝 丄J· 之時間,需要精確控制為-致。 ^狀烤為止 ΐϊί曝光舰龍組16進行加鱗理後,於冷卻料17進 仃將駄觸媒反應停止之冷卻處理。之後,s '、、 進 2〇依序搬入多數,例如2台顯影模& ^運=組 W表面之抗_塗滿顯驗,施以顯影===’, 對Ba圓W表面施用沖洗液,將顯影液洗掉。 顯影步驟結束後’主運送池2〇,將晶圓w從 a =出,其次,依序搬入多數第2加熱板模址15。於該^ 2加熱 15内’晶圓W於例如靴以既定時間進行後棋^處理:、 猎此,因為顯影而膨潤的抗蝕劑硬化,耐藥σ性提言 後烘烤結束後,第i運送模組31,將處^完畢^晶 2加熱板核組15搬出’依序搬入搬出用匿盒模組2, =情處形理的=對於在處啊 首先’例如於上述2台塗布模組U其中之一處理 圓W(A14)有障礙發生之情形,由處理模組、運: 貞酬軸社。其次,⑽U7G彳貞猶部 5至曝光後加熱處理(曝光後烘烤模組16)為止的晶圓w 片數,基於該偵測信號將控制信號傳達至緩衝模纟且5〇, 衝模組50預約已偵測到片數分量的空位。並且;'於於去 光It處理(曝光後供烤模組16)為止之所^曰圓W(A5 〜A10)進灯加熱處理(曝光後烘烤處理)後,以冷卻模组 卻處理’以第2運送模組32運送到緩衝模組5〇之未占 ·; 14 1334190 圖3)°此時’基於在多數曝光後烘烤模組16各個晶圓W經過加 熱處理之曝光後烘烤模組16的記憶,將晶圓W運送到緩衝模組 50之未占用部。藉此,能使進行曝光處理進行至進行曝光後烘烤 處理、冷卻處理為止之時間保持一定,因此能使於晶圓W(A5〜 A10)形成之電路圖案的線寬為一定。 曰又’於偵測到障礙發生之情形’如圖2所示,使塗布處理後 ,晶圓W(A12 ’ A13)對曝光部5之運送暫時停止。並且,將位於 第2,面部7内之冷卻模組的晶圓W(A11)以外的晶圓W(A12、 A13)藉由第2運送模組32運送到緩衝模組5〇内(參照圖4)。又, 於塗布巧組11有障礙發生時,將塗布處理前之晶圓W(A15〜A17) 之運送停止,同時將次批晶圓W(B1)對處理部4之投入停止。與 Γ塗布模組11之障礙修復的情形,如果錯誤旗標(咖 貞測到’並基於來自CPU7G之控制信號,開始 個曰li 一方面’基於在多數曝光後烘烤模組16各 曝絲烘烤模組16的記憶,使退避(運 ^ 未占用部的6片晶圓W(A5〜綱逐片地,ί =圓 熱板模組15,‘顯影到f影模組12及第2加 陶)於緩=== 圖5〜圖 組50被搬出,成為進行之後之運送、處 緩衝模 常方式進行處理二晶圓 又於處理。以中,在主運送模組扣有障礙發生之情形,亦 15 1334190 ΊυΖ ^ 後供烤模二6)il'ai=2f〜 =/曝級加誠理(曝光 _心八旦二二 (A1〇)片數,於缓衝模組50預 供妹f ’將從曝光部5至曝光後加熱處理(曝 ii光所t之:有晶圓•〜ai〇)進行加熱處 50之夫A用、邱,处ϋ’Λ由以第2運送模、组32運送到緩衝模組 細理Α 進彳博光處理至進行曝光後烘烤處理、冷 二:持為固定’能使形成於晶圓W⑻〜剔)之電 μ法模組20有障礙發生之情形,於障礙發生之時點,停 〜Α17)的料,㈣停止次批晶圓 fin °又’顯影處理後之晶圓卿〜α4)運 达、處理(後烘烤處理)也停止(參照圖4)。 述ΐ施形態中’係對於在塗布模組11及主運送模組% 有Ρ權發生之情賴因應^以説明,但是,於塗布额U盘主運 送模組20以外的處理模組,例如,顯影模組 第、 熱板模組14、15有障礙發生之情形,當然也能與上i同tt予: 因應。 —又,於上述實施形態,係對本發明基板運送處理裝置、 Ϊ策ί法及障礙對卵程式應用於晶圓之抗储塗布顯影處理系 ίΪΪί加以說明’但是也可以應用於LCD玻璃基板之塗布顯影 16 1334190 【圖式簡單說明】 顯影處理系統之處理裝置之抗姓劑塗布·曝光 的二=為本發明處理模組之塗布模組中有障礙 發生之狀態 圖3顯示有障礙發生之情形,曝 圓運送到緩補組之狀態馳略平面圖。、.轉處理前之晶 圖4顯示有障礙發生之情形,塗布處 圓運送到緩衝模組之狀態的概略平面圖。 曝先處理别之曰曰 圖5顯示障礙已修復之情形,運送到緩衝模 的運送與曝光前之第i片晶_運送、處理=略=片s曰® 圖6顯不障礙已修復之情形,運送到緩衡模 = 的運送與曝光前之第2片晶圓之、處理^略=片曰曰Η 圖7顯示障礙已修復之情形,運送到。 的運,曝光前之第3片晶圓之運送、處理的概略 圖8顯示障礙已修復之情形,運送到 的運送與曝光前之第4片晶圓之運送、處理的概略:曰® 圖9顯讀礙已修復之情形,運送到 $= baking treatment. After the pre-baking is completed from the film on the wafer boundary, the wafer w in the first heating plate module 14 and the second transfer module 32 in the portion 7a are taken out and moved into the peripheral exposure module J. The wafer W is subjected to exposure processing at the edge portion. After the exposure process, the wafer w 2 transport module 32 in the peripheral wire *4Q is taken out to the first transfer module 6 and then the 3rd transfer module 33 in the 7b receives the i 1 in the transfer module 61 is inside the exposure unit 5. After the exposure process of the exposure unit 5 is completed, the third transport module 33, 5 picks up the wafer W, and transports the picked wafer W to the second transfer module, which is connected to the p 13 1334190. The transport module 32 is connected to the glow module 16 from the second transfer module 62, and is exposed to the acid catalyst in the exposed sample by exposure to the post-bake mold. Therefore, from the time of exposure, precise control is required. ^ Shaped until ΐϊ 曝光 曝光 曝光 舰 舰 舰 舰 舰 舰 曝光 曝光 曝光 曝光 曝光 曝光 曝光 曝光 曝光 曝光 曝光 曝光 曝光 曝光 曝光 曝光 曝光 曝光 曝光 曝光 曝光 曝光 曝光After that, s ', and 2 搬 are carried into the order in order, for example, 2 sets of developing dies & 运 = = group W surface anti-painting test, applying development ===', applying a flush to the Ba round W surface Liquid, wash off the developer. After the development step is completed, the main transport tank 2 〇, the wafer w is taken out from a = , and then, the second heating plate mold 15 is sequentially carried. In the heating 2 of the ^ 2, the wafer W is processed by, for example, a shoe at a predetermined time: the hunting is performed, and the resist which is swollen by the development is hardened, and the resistance σ is introduced after the baking is finished, i The transport module 31 carries out the "finishing 2" heating plate core group 15 and carries out the 'sequential loading and unloading box module 2, = the shape is correct = for the first place', for example, the above two coating dies One of the groups U handles the situation in which the circle W (A14) has an obstacle, and the processing module and the transportation: the reward axis society. Next, (10) the number of wafers from the U7G to the post-exposure heat treatment (exposure bake module 16), based on the detection signal, the control signal is transmitted to the buffer module and 5〇, the punch module 50 The reservation has detected the vacancy of the number of slices. And; 'after the light treatment (after the exposure to the baking module 16), the circle W (A5 ~ A10) into the lamp heat treatment (exposure bake treatment), after the cooling module is processed ' The second transport module 32 is transported to the buffer module 5〇; 14 1334190 FIG. 3) ° At this time, based on the post-exposure bake of each wafer W after heat treatment in most of the post-exposure bake modules 16 The memory of the module 16 transports the wafer W to the unoccupied portion of the buffer module 50. As a result, the time from the exposure processing to the post-exposure baking treatment and the cooling treatment can be kept constant, so that the line width of the circuit pattern formed on the wafers W (A5 to A10) can be made constant. Further, as shown in Fig. 2, after the coating process, the wafer W (A12' A13) is temporarily stopped from being transported to the exposure unit 5. Further, the wafers W (A12, A13) other than the wafer W (A11) of the cooling module located in the second surface portion 7 are transported into the buffer module 5A by the second transport module 32 (refer to the figure). 4). Further, when the coating group 11 has an obstacle, the conveyance of the wafers W (A15 to A17) before the coating processing is stopped, and the loading of the secondary wafer W (B1) to the processing unit 4 is stopped. In the case of the obstacle repair with the enamel coating module 11, if the error flag (the café detects 'and based on the control signal from the CPU 7G, start a 曰li on the one hand' based on the exposure of the majority of the post-exposure bake module 16 The memory of the baking module 16 is retracted (the 6 wafers W of the unoccupied portion (A5~e piece by piece, ί=circular hot plate module 15, 'developed to the f shadow module 12 and the second加 ) 于 = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = In case, 15 1334190 ΊυΖ ^ after the baking mold 2 6) il'ai = 2f ~ = / exposure level plus honesty (exposure _ heart 八旦二二 (A1 〇) number, pre-supplied in the buffer module 50 The sister f' will be heated from the exposure section 5 to the post-exposure treatment (the exposure of the illuminator: there is a wafer • ~ai〇) to the heating place 50, the A, the Qi, the ϋ 'Λ by the second delivery mode The group 32 is transported to the buffer module for fine processing, and the illuminating process is performed until the post-exposure bake process, and the cold two: holding the fixed 'can be formed on the wafer W(8)~tick) In the case of birth, at the time of the occurrence of the obstacle, the material of the stop ~ Α 17), (4) stop the wafer of the second batch of fin ° and 'developed wafers ~ α4) delivery, processing (post-baking treatment) also stops ( Refer to Figure 4). In the embodiment, the description is based on the fact that the coating module 11 and the main transport module have a right to occur, but the processing module other than the coated U disk main transport module 20, for example, The development module, the hot plate modules 14, 15 have obstacles, and of course can also be the same as the above: Further, in the above embodiment, the substrate transport processing apparatus, the method, and the obstacle-to-wafer application processing of the wafer are described in the above embodiments, but the application can also be applied to the coating of the LCD glass substrate. Development 16 1334190 [Simple description of the drawing] The anti-surname application coating and exposure of the processing device of the development processing system is the state in which the obstacle occurs in the coating module of the processing module of the present invention. FIG. 3 shows that the obstacle occurs. A state in which the exposure is transported to the state of the relief group. Fig. 4 shows a schematic plan view of the state in which the obstacle is generated and the coating is transported to the buffer module. Figure 5 shows the situation where the obstacle has been repaired, and the ith platelet before shipment and exposure to the buffer die_transport, processing=slightly=slices s曰® Figure 6 shows that the obstacle has been repaired , transported to the moderation = the second wafer before the transfer and processing, processing ^ slightly = film 曰曰Η Figure 7 shows the obstacle has been repaired, shipped to. Figure 8 shows the transportation and processing of the third wafer before exposure. The obstacles have been repaired. The shipment and the fourth wafer before the exposure are summarized and processed. 曰® Figure 9 Obsessed the situation that has been fixed, shipped to $

之運送的概略平面目。 5 ^ aalU 圖10顯示障礙已修復之情形,運送到緩衝 之運送的概略平賴。 6片曰曰^ 圖11顯不障礙已修復之情形,運送到緩衝模組卜 晶圓之運送、處理的概略平面圖。 圖12顯示曝光處理後、顯影處理前之晶 後,曝光處理前之晶圓的運送、處理的概略平面圖隻触,、且搬出 【元件符號之說明】 W 半導體晶圓(被處理基板) 1 搬入用匣盒模組 17 1334190The rough plane of the shipment. 5 ^ aalU Figure 10 shows the situation where the obstacle has been repaired, and the transportation to the buffer is roughly the same. 6 pieces of 曰曰^ Figure 11 shows the situation where it has been repaired, and it is a schematic plan view of the transportation and processing of the wafer to the buffer module. FIG. 12 shows a schematic plan view of the wafer transport and processing before the exposure processing after the exposure processing and before the development processing, and the description of the component symbol is performed. W Semiconductor wafer (processed substrate) 1 With cassette module 17 1334190

2 搬出用匣盒模組 3 搬入·搬出部 4 處理部 5 曝光部 6 第1界面部 7 第2界面部 7a 主界面部 7b 辅助界面部 11 塗布模組(處理模組) 12 顯影模組(處理模組) 13 黏附模組(處理模組) 14 第1加熱板模組(處理模組) 15 第2加熱板模組(處理模組) 16 曝光後烘烤模組(處理模組) 17 冷卻模組 20 主運送模組 31 第1運送模組 32 第2運送模組 33 第3運送模組 40 周邊曝光模組(處理模組) 50 緩衝模組 61 第1傳遞模組 62 第2傳遞模組 70 CPU(控制機構) 182 Carrying out cassette module 3 Loading and unloading unit 4 Processing unit 5 Exposure unit 6 First interface unit 7 Second interface unit 7a Main interface unit 7b Auxiliary interface unit 11 Coating module (processing module) 12 Development module ( Processing module) 13 Adhesive module (processing module) 14 First heating plate module (processing module) 15 Second heating plate module (processing module) 16 Post-exposure baking module (processing module) 17 Cooling module 20 main transport module 31 first transport module 32 second transport module 33 third transport module 40 peripheral exposure module (processing module) 50 buffer module 61 first transfer module 62 second pass Module 70 CPU (Control Mechanism) 18

Claims (1)

’ Ί七點2·號專利申請案中文申請 , 月寻利乾圍修正本(無劃線) 十、申請專利範圍: ‘種基板運送處理裝置,包含. 2009年9月16日修訂17“· ?!正“ 搬入用匣盒模組,收容客土 多數的處理模組,ί理之被處理基板; 施以蚊纽;及處1基板之曝光紐,触處理基板 組將:=:===2處理基板對 處理並於各處理模組對被處理基板進行曝光前 其特徵在於以下列方式構成: 包含: 二=該運送模組之間傳遞多數被處理基板;及 於該债測信號,發生之障礙及障礙之修復,基 加埶處理為止之日士ίί:等控制,將從被處理基板之曝光後至 一^;為㈣L制成固定,俾保持顯影後線寬之均勻性為 基於該控制機構之控制信號, 其板=1貞=任Ί處理模組發生障礙之情形,將曝光後之被處理 到該緩衝模組之未占用部,使曝光前^ 組; *先處理奴運送暫時停止,同時,運送到該緩衝模 衝模2=2^發生之處理模組修復的情形,將運送到該緩 送、、产ί ΐ 贿理基板騎祕光後加減理以後之運 以=5他被處理基板之運送、處理。 i靶圍弟1項之基板運送處理裝置,其中, 3.如板」餘布有化學放大魏糊之基板。 更=人、圍第1或2項之基板運送處理裝置,其中, 冷卻。冷部模組,將經過曝光後加熱處理之被處理基板予以 19 1334190 4·如=專纖圍第1或2項之基板運送處理裝置換頁-缓衝剩任—處理模組發生障礙之情形,預約該 有被處理紐運树·輕曝級加減理之所 5·如第1或2項之基板運送處理裝置,其中, 柄用發生之障礙,包含於處理模組間運送被處理基 板用之運达模組發生的障礙。 6·如申請專利$!圍第丨項之基板運送處理裝置,盆中, 到加時間,包含從被輕基板之曝光起 7.—種基板運送處理裴置之障礙對策方法, 該基板運送處理裝置,包含: 盒敎’收容多片未處理之被處理基板; 施以^定處Ϊ理^組,於被處理基板之曝光前後,對被處理基板 f數的運送模組,將被處理基板於各模組間運送; 各/ΐϊϋΐϊΐ組將來自於該搬入用S盒模組之被處理基板對 處王ΐ及曝光ϋ熱:亚於各處理模組顺處理基板進行曝光前 该障礙對策方法之特徵在於: 模組統籌控制之控制機構,債測於任-處理模組 ^止之修復’將該被處31基板從曝光後至加熱處理 為止巧間控制為固定,俾保持顯影後線£之均勻性為一定; 基於該控制機構之控制信號, =處理模組發生障礙之情形,將曝光後之被處理 ίΐϊΐΐΐΐ 該緩衝模組之未占用部,使曝光前之被處 ΪΪΐΐί ^部之運送暫時停止,同時, =貞測,^礙發生之處理模組修復的情形,將已運送到該 …吴、.a之未Μ部的破處理基板’進行轉光後加熱處理之後 20 *1 明 4190 f運送、處理,同時進行其他被處理基板之 法,其 8中如申請翻範圍第7項之基板處理裝置之障^策方 ,被處縣板缝布有化學放續抗㈣之基板。 法,^專·圍第7或8項之基板運送處理裝置之障礙對策方 約兮構2偵測到任—處理模組有發生障礙之情形,預 輸晴光後加熱處 =·如其申^專纖圍第7或8項之基板運送處理裝置之障礙對策方 板用礙,包含於處理模組間運送被處理基 ^如If專纖㈣7或8項之基板運送處理裂置之障礙對策方 T , 緩衡ίίϊ被處理基板於加熱處理之後進行冷卻處理,絲運送到 12, 其申請專利範圍第7項之基板運送處理裝置之障礙對策方法’' Ί 7:2, No. 2 patent application Chinese application, monthly search for the right to do the correction (no underline) X. Patent application scope: 'A kind of substrate transport processing device, including. September 16, 2009 revision 17" ?! is "moving into the box module, housing the majority of the processing module, the substrate to be treated; applying the mosquito button; and the exposure button on the substrate, the touch substrate group will: =:== = 2 processing substrate processing and before the exposure of each processing module to the substrate to be processed is characterized in that: comprising: 2 = transferring a plurality of processed substrates between the transport modules; and The obstacles and obstacles that have been repaired, the Japanese ί ί ί 等 等 等 等 等 等 等 等 等 等 等 等 等 等 等 等 等 等 等 等 等 等 等 等 等 等 等 等 等 等 等 等 等 等 等 等 等 等 等 等 等 等The control signal of the control mechanism, the board = 1 贞 = the situation where the processing module is in an obstacle, and the exposed portion is processed to the unoccupied portion of the buffer module to make the pre-exposure group; Temporarily stopped, at the same time, shipped to the 2 ^ 2 = punch die case of the processing module repair occurred, to transport to the production ί ΐ tarpitting ,, after the subtraction processing operation to he = 5 transports the substrate to be processed after the substrate processing bribe light riding secret process. In the substrate transport processing apparatus of the i target, the substrate is processed by a chemically magnified wafer. Further, the substrate transport processing apparatus of the first or second item is cooled by a person. The cold part module, the substrate to be processed after the exposure and heat treatment is 19 1334190 4 · If the substrate transfer processing device of the first or second item of the special fiber circumference is changed to the page-buffer remaining - the processing module is in an obstacle, The board transport processing apparatus according to the first or second item, wherein the obstacle for the occurrence of the handle is included in the transport of the substrate to be processed between the processing modules. Obstacles to the delivery of modules. 6. In the case of the substrate transport processing device of the 丨 丨 丨 , , , , , , , 盆 盆 盆 盆 盆 盆 盆 盆 盆 7 7 7 7 7 7 7 7 7 7 7 7 7 7 7 7 7 7 The device comprises: a cassette 收容 accommodating a plurality of unprocessed substrates to be processed; and a processing module for applying the number of substrates to be processed before and after exposure of the substrate to be processed; Ϊ́ϊϋΐϊΐ 运送 ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; The feature is: the control mechanism of the integrated control of the module, and the repair of the debt-receiving module is controlled to be fixed by the 31 substrate from the exposure to the heat treatment, and the line after the development is maintained. The uniformity is constant; based on the control signal of the control mechanism, the processing module is in an obstacle condition, and the exposed portion is processed to the unoccupied portion of the buffer module, so that the exposure is before the exposure. Ϊ́ί ^ The delivery of the Ministry temporarily stopped, and at the same time, the situation of the processing module repaired by the 贞 , ^ ^ ^ ^ ^ 吴 吴 吴 吴 吴 吴 吴 吴 吴 吴 吴 吴 吴 吴 吴 吴 吴 吴 吴 吴After 20 *1 4190 f transport, processing, and other methods of processing the substrate at the same time, 8 of which are applied to the substrate processing device of the seventh item, the chemical plate is spliced by the county Anti-(four) substrate. In the case of the law, the obstacles of the substrate transport processing device of the seventh or the eighth item are detected. The device 2 detects that there is an obstacle in the processing module, and the heating is performed after the pre-transmission of the clear light =· The obstacle countermeasures for the substrate transport processing device of the seventh or eighth item are included in the obstacle handling measures for transporting the substrate to be processed between the processing modules, such as the If fiber (4) 7 or 8 substrate transport processing. , the method of countermeasures for the substrate transport processing device of the seventh application of the patent application scope is carried out 該控制的固定時間包含從被處理基板之曝光起至加 ^冷卻處理為止。 ”、、反 策用^重^腦可碩取記錄媒體,記錄有基板運送處理裝置之障礙對 該基板運送處理裳置,包含: 搬入用匣盒模組,收容多片未處理之被處理基板; 多數的處理模組,於被處理基板之曝光前後,對被處理灵無 施以既定處理;及 ’ ’ 土傲 多數的運送模組,將被處理基板於各模組間運送; 緩衝模組’於與該運送模組之間傳遞多數被處理基板;及 1334190 為碁· !i|i£替換頁 控制機構,偵測於該處理模組發生之障礙及 號,,統籌控制,將』後; 一為止之_控制成固定,俾保持顯影後線寬之均勾性為 各處==將來搬入賴盒模組之被處理基板對 處;及Ϊ先;理亚於各處理模組爾 該5己錄媒體之特徵在於令電腦執行以下步驟: 偵測於任一處理模組發生之障礙的步驟; 占用之被處理基板於加熱處理後運送到該緩衝模組之未 將被處理基板對曝光處理部之運送暫時停止之步驟; 將曝光别處理後之被處理基板運送到該緩衝模組之步驟; 偵測有障礙發生之處理模組之修復的步驟; ’ 、於該處理模組修復後,對於已運送到該緩衝模組之未占用部 的被處理基板’進行該曝光後加減理讀的運送、纽的步^. 及 進行已運送到該緩衝模组之未占用部的被處理基以 的被處理基板的運送、處理的步驟。 /、他The fixed time of the control includes from the exposure of the substrate to be processed to the cooling treatment. </ br><br><br><br><br><br><br><br><br><br><br><br><br><br><br><br><br><br><br><br><br><br><br><br><br><br><br><br><br><br><br><br><br> Most of the processing modules do not have a predetermined treatment on the processed substrate before and after exposure of the substrate to be processed; and ''the majority of the transport module, the substrate to be processed is transported between the modules; buffer module 'Transfers a large number of substrates to be processed between the transport module; and 1334190 is a replacement page control mechanism for detecting the obstacles and numbers generated by the processing module, and coordinating control Once the _ control is fixed, 俾 keeps the line width of the development after the development is everywhere == in the future, the substrate is moved into the module to be treated; and Ϊ first; Liya in each processing module The characteristic of the 5 recorded media is that the computer performs the following steps: detecting the obstacles occurring in any of the processing modules; and occupying the substrate to be processed after being heated and transported to the buffer module without exposing the processed substrate to the substrate deal with The step of temporarily stopping the transportation of the part; the step of transporting the processed substrate after the exposure to the buffer module; the step of detecting the repair of the processing module having the obstacle; ', after the processing module is repaired, Carrying out the post-exposure addition and subtraction of the processed substrate that has been transported to the unoccupied portion of the buffer module, and performing the processing on the unprocessed portion of the buffer module. The steps of transporting and processing the substrate to be processed.
TW095142780A 2005-11-24 2006-11-20 Substrate transportation processing apparatus and method of trouble measures of substrate transportation processing apparatus and computer readable medium encoded with a program for trouble measures of substrate transportation processing apparatus TWI334190B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005337954A JP4542984B2 (en) 2005-11-24 2005-11-24 Substrate transport processing apparatus, fault countermeasure method in substrate transport processing apparatus, and fault countermeasure program in substrate transport processing apparatus

Publications (2)

Publication Number Publication Date
TW200735251A TW200735251A (en) 2007-09-16
TWI334190B true TWI334190B (en) 2010-12-01

Family

ID=38210810

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095142780A TWI334190B (en) 2005-11-24 2006-11-20 Substrate transportation processing apparatus and method of trouble measures of substrate transportation processing apparatus and computer readable medium encoded with a program for trouble measures of substrate transportation processing apparatus

Country Status (4)

Country Link
US (1) US20070219660A1 (en)
JP (1) JP4542984B2 (en)
KR (1) KR101062504B1 (en)
TW (1) TWI334190B (en)

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20080292433A1 (en) * 2007-05-11 2008-11-27 Bachrach Robert Z Batch equipment robots and methods of array to array work-piece transfer for photovoltaic factory
US20080279672A1 (en) * 2007-05-11 2008-11-13 Bachrach Robert Z Batch equipment robots and methods of stack to array work-piece transfer for photovoltaic factory
US7496423B2 (en) * 2007-05-11 2009-02-24 Applied Materials, Inc. Method of achieving high productivity fault tolerant photovoltaic factory with batch array transfer robots
US20080279658A1 (en) * 2007-05-11 2008-11-13 Bachrach Robert Z Batch equipment robots and methods within equipment work-piece transfer for photovoltaic factory
JP5006122B2 (en) 2007-06-29 2012-08-22 株式会社Sokudo Substrate processing equipment
TW200919117A (en) * 2007-08-28 2009-05-01 Tokyo Electron Ltd Coating-developing apparatus, coating-developing method and storage medium
JP4986784B2 (en) * 2007-09-18 2012-07-25 東京エレクトロン株式会社 Processing system control apparatus, processing system control method, and storage medium storing control program
JP5128918B2 (en) * 2007-11-30 2013-01-23 株式会社Sokudo Substrate processing equipment
JP5001828B2 (en) * 2007-12-28 2012-08-15 株式会社Sokudo Substrate processing equipment
JP5179170B2 (en) 2007-12-28 2013-04-10 株式会社Sokudo Substrate processing equipment
US8655472B2 (en) * 2010-01-12 2014-02-18 Ebara Corporation Scheduler, substrate processing apparatus, and method of transferring substrates in substrate processing apparatus
JP5168300B2 (en) * 2010-02-24 2013-03-21 東京エレクトロン株式会社 Substrate processing apparatus and substrate processing method
JP5338757B2 (en) * 2010-07-09 2013-11-13 東京エレクトロン株式会社 Coating, developing device, coating, developing method and storage medium
JP2012080077A (en) * 2010-09-06 2012-04-19 Tokyo Electron Ltd Device and method for substrate processing
JP5921200B2 (en) * 2012-01-05 2016-05-24 株式会社日立国際電気 Substrate processing apparatus, substrate processing method, semiconductor device manufacturing method, degenerate operation program, and production list creation program
JP5928283B2 (en) * 2012-09-28 2016-06-01 東京エレクトロン株式会社 Substrate processing apparatus, substrate transfer method, and storage medium
JP6279343B2 (en) * 2014-02-20 2018-02-14 株式会社Screenホールディングス Substrate processing apparatus, program, and substrate processing method
JP6259698B2 (en) 2014-03-28 2018-01-10 株式会社荏原製作所 Substrate processing method
JP6860365B2 (en) * 2017-01-31 2021-04-14 キヤノン株式会社 Substrate processing equipment, substrate processing system, substrate processing method, article manufacturing method, and program
KR102164067B1 (en) * 2017-09-29 2020-10-12 시바우라 메카트로닉스 가부시끼가이샤 Substrate processing apparatus and substrate processing method
TWI758578B (en) * 2018-03-01 2022-03-21 日商荏原製作所股份有限公司 Scheduler, substrate processing apparatus, and substrate conveyance method
JP7109287B2 (en) * 2018-07-09 2022-07-29 東京エレクトロン株式会社 SUBSTRATE PROCESSING SYSTEM, SUBSTRATE PROCESSING METHOD, AND CONTROL PROGRAM
KR102247828B1 (en) * 2018-07-23 2021-05-04 세메스 주식회사 Substrate treating method and substrate treating apparatus
JP7350114B2 (en) * 2022-03-03 2023-09-25 株式会社Screenホールディングス Substrate processing equipment and substrate processing method

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4233285B2 (en) * 2002-08-23 2009-03-04 大日本スクリーン製造株式会社 Substrate processing equipment
JP4087328B2 (en) * 2002-11-28 2008-05-21 東京エレクトロン株式会社 Coating and developing apparatus and operating method of coating and developing apparatus
JP4079861B2 (en) * 2003-09-22 2008-04-23 大日本スクリーン製造株式会社 Substrate processing equipment
JP2005101077A (en) * 2003-09-22 2005-04-14 Dainippon Screen Mfg Co Ltd Substrate processing equipment and substrate processing method

Also Published As

Publication number Publication date
JP2007149717A (en) 2007-06-14
JP4542984B2 (en) 2010-09-15
US20070219660A1 (en) 2007-09-20
KR101062504B1 (en) 2011-09-05
TW200735251A (en) 2007-09-16
KR20070055394A (en) 2007-05-30

Similar Documents

Publication Publication Date Title
TWI334190B (en) Substrate transportation processing apparatus and method of trouble measures of substrate transportation processing apparatus and computer readable medium encoded with a program for trouble measures of substrate transportation processing apparatus
TWI502624B (en) Substrate processing system and substrate processing method
TWI287250B (en) Substrate transfer and processing apparatus, obstacle measure method in substrate transfer and processing apparatus and program for an obstacle measure in the substrate transfer and processing apparatus
JP5065167B2 (en) Substrate processing method and substrate processing system
JP5132920B2 (en) Coating / developing apparatus, substrate transport method, and computer program
JP4079861B2 (en) Substrate processing equipment
TWI293938B (en)
JP2008244072A (en) Substrate processing method, substrate processor, and computer readable storage medium
WO2015098282A1 (en) Substrate processing system, substrate transport method, and computer storage medium
TWI489576B (en) Substrate processing apparatus and substrate processing method
JP2002043208A (en) Method for coating and development
JP4702446B2 (en) Coating, developing device, coating, developing method and storage medium
JP4422000B2 (en) Substrate processing method, control program, and computer storage medium
TWI305003B (en) Substrate processing system and method
TWI581065B (en) Coating and developing apparatus, coating and developing method and storage medium
JP2005317686A (en) Method and device of resist treatment
JP7117366B2 (en) Substrate processing equipment
JP4777232B2 (en) Substrate processing method, substrate processing system, and computer-readable storage medium storing program
KR20190034644A (en) A substrate processing management apparatus, a substrate processing management method, and a substrate processing management program
JP3772011B2 (en) Substrate processing equipment
JPH10307604A (en) Processor and its control method
JPH11354618A (en) Processor
KR20120077880A (en) Substrate processing method for photolithography process
JPH09312321A (en) Method of treating substrate
KR20040065680A (en) A buffer of semiconductor device fabrication equipment