TWI326459B - Distributive capacitor for high density applications - Google Patents
Distributive capacitor for high density applications Download PDFInfo
- Publication number
- TWI326459B TWI326459B TW092134841A TW92134841A TWI326459B TW I326459 B TWI326459 B TW I326459B TW 092134841 A TW092134841 A TW 092134841A TW 92134841 A TW92134841 A TW 92134841A TW I326459 B TWI326459 B TW I326459B
- Authority
- TW
- Taiwan
- Prior art keywords
- conductive layer
- rti
- capacitor
- decentralized
- dielectric material
- Prior art date
Links
- 239000003990 capacitor Substances 0.000 title claims description 48
- 239000003989 dielectric material Substances 0.000 claims description 31
- 239000000758 substrate Substances 0.000 claims description 25
- 239000000463 material Substances 0.000 claims description 16
- 239000000919 ceramic Substances 0.000 claims description 10
- 239000004065 semiconductor Substances 0.000 claims description 9
- 239000004593 Epoxy Substances 0.000 claims description 8
- 239000004020 conductor Substances 0.000 claims description 8
- 150000001875 compounds Chemical class 0.000 claims description 7
- 230000005540 biological transmission Effects 0.000 claims description 6
- 230000008878 coupling Effects 0.000 claims description 4
- 238000010168 coupling process Methods 0.000 claims description 4
- 238000005859 coupling reaction Methods 0.000 claims description 4
- 239000011347 resin Substances 0.000 claims description 4
- 229920005989 resin Polymers 0.000 claims description 4
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerine Chemical compound OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 claims 1
- 239000006185 dispersion Substances 0.000 claims 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 7
- 238000004088 simulation Methods 0.000 description 7
- 238000000034 method Methods 0.000 description 6
- 238000012545 processing Methods 0.000 description 6
- 230000004044 response Effects 0.000 description 6
- 230000001413 cellular effect Effects 0.000 description 4
- 239000011889 copper foil Substances 0.000 description 4
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 230000003321 amplification Effects 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 229910052732 germanium Inorganic materials 0.000 description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000003199 nucleic acid amplification method Methods 0.000 description 2
- 229910002601 GaN Inorganic materials 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- 241000264877 Hippospongia communis Species 0.000 description 1
- 238000013475 authorization Methods 0.000 description 1
- 230000006399 behavior Effects 0.000 description 1
- 229910000420 cerium oxide Inorganic materials 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000021615 conjugation Effects 0.000 description 1
- 238000007766 curtain coating Methods 0.000 description 1
- 239000002305 electric material Substances 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000011888 foil Substances 0.000 description 1
- VTGARNNDLOTBET-UHFFFAOYSA-N gallium antimonide Chemical compound [Sb]#[Ga] VTGARNNDLOTBET-UHFFFAOYSA-N 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 238000012216 screening Methods 0.000 description 1
- 230000001568 sexual effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/16—Printed circuits incorporating printed electric components, e.g. printed resistor, capacitor, inductor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P5/00—Coupling devices of the waveguide type
- H01P5/02—Coupling devices of the waveguide type with invariable factor of coupling
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/16—Printed circuits incorporating printed electric components, e.g. printed resistor, capacitor, inductor
- H05K1/162—Printed circuits incorporating printed electric components, e.g. printed resistor, capacitor, inductor incorporating printed capacitors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/201—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits
- H10D84/204—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors
- H10D84/212—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors of only capacitors
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/0213—Electrical arrangements not otherwise provided for
- H05K1/0237—High frequency adaptations
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/01—Dielectrics
- H05K2201/0183—Dielectric layers
- H05K2201/0187—Dielectric layers with regions of different dielectrics in the same layer, e.g. in a printed capacitor for locally changing the dielectric properties
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/09—Shape and layout
- H05K2201/09209—Shape and layout details of conductors
- H05K2201/095—Conductive through-holes or vias
- H05K2201/09509—Blind vias, i.e. vias having one side closed
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/09—Shape and layout
- H05K2201/09209—Shape and layout details of conductors
- H05K2201/09654—Shape and layout details of conductors covering at least two types of conductors provided for in H05K2201/09218 - H05K2201/095
- H05K2201/09727—Varying width along a single conductor; Conductors or pads having different widths
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Parts Printed On Printed Circuit Boards (AREA)
- Production Of Multi-Layered Print Wiring Board (AREA)
- Waveguides (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US10/331,901 US6760208B1 (en) | 2002-12-30 | 2002-12-30 | Distributive capacitor for high density applications |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200425180A TW200425180A (en) | 2004-11-16 |
| TWI326459B true TWI326459B (en) | 2010-06-21 |
Family
ID=30770802
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW092134841A TWI326459B (en) | 2002-12-30 | 2003-12-10 | Distributive capacitor for high density applications |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US6760208B1 (enExample) |
| JP (1) | JP4417095B2 (enExample) |
| KR (1) | KR100542846B1 (enExample) |
| CN (1) | CN100472676C (enExample) |
| GB (1) | GB2397173B (enExample) |
| TW (1) | TWI326459B (enExample) |
Families Citing this family (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100645625B1 (ko) * | 2004-12-01 | 2006-11-15 | 삼성전기주식회사 | 커패시터 내장형 인쇄회로기판 및 그 제조방법 |
| KR100598118B1 (ko) | 2005-01-12 | 2006-07-10 | 삼성전자주식회사 | 적층형 인쇄회로기판 |
| US20070153490A1 (en) * | 2005-12-30 | 2007-07-05 | Benham John R | Methods and apparatus for electromagnetically sampling signals using socket-package interface based interposer |
| US8094429B2 (en) * | 2009-06-22 | 2012-01-10 | Industrial Technology Research Institute | Multilayer capacitors and methods for making the same |
| CN102412913B (zh) * | 2011-10-24 | 2016-09-14 | 惠州Tcl移动通信有限公司 | 一种测试系统和移动通讯终端的天线调试方法 |
| US9035714B2 (en) * | 2012-07-03 | 2015-05-19 | Cisco Technology, Inc. | Parasitic capacitance compensating transmission line |
| US9595217B2 (en) | 2013-12-05 | 2017-03-14 | Samsung Display Co., Ltd. | Trace structure for improved electrical signaling |
| US10153238B2 (en) | 2014-08-20 | 2018-12-11 | Samsung Display Co., Ltd. | Electrical channel including pattern voids |
| US9461810B2 (en) | 2014-09-18 | 2016-10-04 | Samsung Display Co., Ltd. | Multi-drop channels including reflection enhancement |
| KR102293487B1 (ko) * | 2014-10-31 | 2021-08-25 | 현대모비스 주식회사 | 차량용 레이더의 임피던스 매칭 회로를 결정하기 위한 방법 |
| CN104617081B (zh) * | 2015-01-30 | 2018-07-27 | 天津中科海高微波技术有限公司 | 应用于单片微波集成电路的连接线以及连接线的设计方法 |
| TWI584526B (zh) | 2015-12-04 | 2017-05-21 | 財團法人工業技術研究院 | 積層式天線結構 |
| CN107995770B (zh) * | 2017-11-10 | 2021-04-02 | 惠科股份有限公司 | 一种柔性扁平排线和显示面板 |
| WO2020132187A1 (en) * | 2018-12-20 | 2020-06-25 | Avx Corporation | Multilayer electronic device including a high precision inductor |
| DE102020125942A1 (de) * | 2020-10-05 | 2022-04-07 | Dr. Ing. H.C. F. Porsche Aktiengesellschaft | Elektrisches oder elektronisches Steuergerät |
| KR102826542B1 (ko) * | 2022-03-18 | 2025-06-26 | 삼성전자주식회사 | 다층 기판을 갖는 전자 장치 및 그 제조 방법 |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB1273267A (en) * | 1968-04-01 | 1972-05-03 | Itek Corp | Photographic process for producing electrical components |
| DE3714672A1 (de) * | 1987-05-02 | 1988-11-17 | Telefunken Electronic Gmbh | Rc-leitung |
| US6185354B1 (en) * | 1998-05-15 | 2001-02-06 | Motorola, Inc. | Printed circuit board having integral waveguide |
| US6103134A (en) * | 1998-12-31 | 2000-08-15 | Motorola, Inc. | Circuit board features with reduced parasitic capacitance and method therefor |
| JP2002033560A (ja) * | 2000-07-17 | 2002-01-31 | Alps Electric Co Ltd | 電子回路基板の製造方法 |
| US6606793B1 (en) * | 2000-07-31 | 2003-08-19 | Motorola, Inc. | Printed circuit board comprising embedded capacitor and method of same |
-
2002
- 2002-12-30 US US10/331,901 patent/US6760208B1/en not_active Expired - Lifetime
-
2003
- 2003-12-10 TW TW092134841A patent/TWI326459B/zh not_active IP Right Cessation
- 2003-12-17 GB GB0329180A patent/GB2397173B/en not_active Expired - Fee Related
- 2003-12-19 JP JP2003422290A patent/JP4417095B2/ja not_active Expired - Fee Related
- 2003-12-30 KR KR1020030100466A patent/KR100542846B1/ko not_active Expired - Lifetime
- 2003-12-30 CN CNB200310124024XA patent/CN100472676C/zh not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| GB2397173B (en) | 2005-04-20 |
| KR20040062413A (ko) | 2004-07-07 |
| JP2004214652A (ja) | 2004-07-29 |
| CN100472676C (zh) | 2009-03-25 |
| JP4417095B2 (ja) | 2010-02-17 |
| KR100542846B1 (ko) | 2006-01-20 |
| GB2397173A (en) | 2004-07-14 |
| US6760208B1 (en) | 2004-07-06 |
| CN1534698A (zh) | 2004-10-06 |
| GB0329180D0 (en) | 2004-01-21 |
| TW200425180A (en) | 2004-11-16 |
| US20040125526A1 (en) | 2004-07-01 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MM4A | Annulment or lapse of patent due to non-payment of fees |