Claims (1)
1325054 十、申請專利範圍: 1. 一種具擴散微空腔單元之氣體感測器,包括: 一感測單元,包括有一感測基材,該感測基材具有 一上表面與一下表面,該上表面設置有一第一感測電 極,而該下表面設置有一第二感測電極,其中該感測基 材内部埋設有複數個傳導電極與複數個加熱器,該傳導 電極與該加熱器連接;及 一微空腔單元,係固設於該感測單元上方,並於該 微空腔單元與該感測基材間形成一微空腔,該微空腔單 元上係設有一擴散孔。 2. 如申請專利範圍第1項之具擴散微空腔單元之氣體感 測器,其中該微空腔單元係為以玻璃、矽晶組成及其表 面鑛膜之結構。 3. 如申請專利範圍第1項之具擴散微空腔單元之氣體感 測器,其中該擴散孔的直徑小於20#111。 4. 如申請專利範圍第1項之具擴散微空腔單元之氣體感 測器,其中該感測基材係為氧離子導體所組成。 5. 如申請專利範圍第4項之具擴散微空腔單元之氣體感 測器,其中該氧離子導體係為氧化鍅。 6. 如申請專利範圍第1項或第4項之具擴散微空腔單元之 氣體感測器’其1ί7該感測基材之厚度為5-30 // m。 7. —種具擴散微空腔單元之氣體感測器的製作方法,包 括: 製作一微空腔單元,並於該微空腔單元上形成一擴 散孔; 製作一感測基材,於該感測基材上下表面設置有一 第一感測電極與一第二感測電極,該感測基材内埋設 13 1325054 有複數個傳導電極與複數個加熱器;以及 連接該微空腔單元與該感測基材。 8. 如申請專利範圍第7項之具擴散微空腔單元之氣體感 測器的製作方法,其中該微空腔單元係為以玻璃、矽晶 組成及其表面鍍膜之結構。 9. 如申請專利範圍第7項之具擴散微空腔單元之氣體感 測器的的製作方法,其中該擴散孔的直徑小於20"m。 10. 如申請專利範圍第7項之具擴散微空腔單元之氣體感 測器的的製作方法,其中該感測基材為氧離子導體所組 成。 11. 如申請專利範圍第10項之具擴散微空腔單元之氣體感 測器的的製作方法,其中該氧離子導體係為氧化锆。 12. 如申請專利範圍第7項或第10項之具擴散微空腔單元 之氣體感測器的的製作方法,其中該感測基材之厚度為 5-30 // m。 13. 如申請專利範圍第7項之具擴散微空腔單元之氣體感 測器的的製作方法,其中該微空腔單元的製法包括以一 微機電加工方式製作。 14. 如申請專利範圍第13項之具擴散微空腔單元之氣體感 測器的的製作方法,其中該微機電加工方式係為一低溫 CMOS/MEMS 加工法。 15. 如申請專利範圍第7項之具擴散微空腔單元之氣體感 測器的的製作方法,其中該感測基材係由一陶瓷粉體製 作。 16. 如申請專利範圍第7項之具擴散微空腔單元之氣體感 測器的的製作方法,其中該感測基材係以一刮刀成型方 法將該陶瓷粉體製作成該感測基材。 14 1325054 17. 如申請專利範圍第7項之具擴散微空腔單元之氣體感 測器的的製作方法,其中該加熱器係以共燒方式結合在 該感測基材内部。 18. 如申請專利範圍第7項之具擴散微空腔單元之氣體感 測器的的製作方法,其中該微空腔單元與該感測單元係 以一陽極結合。 19. 如申請專利範圍第7項之具擴散微空腔單元之氣體感 測器的的製作方法,其中該微空腔單元與該感測單元係 以一材料共熔點方式結合。1325054 X. Patent Application Range: 1. A gas sensor with a diffusion microcavity unit, comprising: a sensing unit comprising a sensing substrate, the sensing substrate having an upper surface and a lower surface, a first sensing electrode is disposed on the upper surface, and a second sensing electrode is disposed on the lower surface, wherein the sensing substrate is embedded with a plurality of conductive electrodes and a plurality of heaters, and the conductive electrode is connected to the heater; And a microcavity unit is fixed on the sensing unit, and forms a microcavity between the microcavity unit and the sensing substrate, and the microcavity unit is provided with a diffusion hole. 2. A gas sensor having a diffusion microcavity unit according to claim 1, wherein the microcavity unit is in the form of glass, twin crystal and its surface mineral film. 3. A gas sensor having a diffusion microcavity unit as claimed in claim 1 wherein the diameter of the diffusion hole is less than 20#111. 4. A gas sensor having a diffusion microcavity unit according to claim 1 wherein the sensing substrate is comprised of an oxygen ion conductor. 5. A gas sensor having a diffusing microcavity unit according to claim 4, wherein the oxygen ion guiding system is cerium oxide. 6. The gas sensor of the diffusing microcavity unit as claimed in claim 1 or 4, wherein the sensing substrate has a thickness of 5-30 // m. 7. A method of fabricating a gas sensor with a diffusion microcavity unit, comprising: fabricating a microcavity unit and forming a diffusion hole in the microcavity unit; and fabricating a sensing substrate a first sensing electrode and a second sensing electrode are disposed on the upper and lower surfaces of the sensing substrate, and 13 1325054 is embedded in the sensing substrate, and a plurality of conductive electrodes and a plurality of heaters are connected; and the microcavity unit is connected to the Sensing the substrate. 8. The method of fabricating a gas sensor having a diffusion microcavity unit according to claim 7, wherein the microcavity unit is a glass, a twin crystal structure and a surface coating film. 9. The method of fabricating a gas sensor having a diffusion microcavity unit according to claim 7 wherein the diameter of the diffusion hole is less than 20 " m. 10. The method of fabricating a gas sensor having a diffusion microcavity unit according to claim 7, wherein the sensing substrate is an oxygen ion conductor. 11. The method of fabricating a gas sensor having a diffusion microcavity unit according to claim 10, wherein the oxygen ion guiding system is zirconia. 12. The method of fabricating a gas sensor having a diffusion microcavity unit according to claim 7 or 10, wherein the sensing substrate has a thickness of 5-30 // m. 13. The method of fabricating a gas sensor having a diffusing microcavity unit according to claim 7, wherein the method of fabricating the microcavity unit comprises fabricating in a microelectromechanical process. 14. The method of fabricating a gas sensor having a diffusion microcavity unit according to claim 13 wherein the MEMS processing method is a low temperature CMOS/MEMS processing method. 15. The method of fabricating a gas sensor having a diffusing microcavity unit according to claim 7, wherein the sensing substrate is made of a ceramic powder system. 16. The method of fabricating a gas sensor with a diffusion microcavity unit according to claim 7, wherein the sensing substrate is formed into the sensing substrate by a doctor blade forming method. . A method of fabricating a gas sensor having a diffusing microcavity unit according to claim 7 wherein the heater is co-fired in the interior of the sensing substrate. 18. The method of fabricating a gas sensor having a diffusion microcavity unit according to claim 7, wherein the microcavity unit and the sensing unit are combined with an anode. 19. The method of fabricating a gas sensor having a diffusion microcavity unit according to claim 7, wherein the microcavity unit and the sensing unit are combined in a eutectic manner.
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丨 (本說明書格式、順序及粗體字,請勿任意更動,※記號部分諳勿填寫) ※申請案號: ※申請日期:' α、4 效1?<:分類:ΙΑμ (2〇服〇1) 一、發明名稱:(中文/英文) 具擴散微空腔體之氣體感測器及其製作方法/Gas Sensor with Diffuse Micro Cavity Structure and Method thereof. 二、 申請人:(共1人) 姓名或名稱··(中文/英文)(簽章) 財團法人工業技術研究院/ Industrial Technology Research Institute 代表人··(中文/英文)(簽章)張進福/ CHANq JIN_FU 住居所或營業所地址:(中文/英文) 新竹縣竹東鎮中興路四段195號/ No.195,Sec.4,Chung Hsin Rd.,Chu Tung Town, Hsin Chu Hsien, Taiwan, R.O.C. 國籍:(中文/英文)中華民國/R.O.C. 三、 發明人:(共4人) 姓名··(中文/英文) 1·陳一誠/CHEN, I-CHERNG 2. 張志祥/CHANQCHICH-SHANO 3. 何朝仁/HO,CHAO-JEC 4·邱國創/CHIU, KUO-CHUANG 國籍:(中文/英文) 1〜4·中華民國/R.O.C. 1 1325054 一·一_ -一 . 1讳/!月日修正f换頁 恭材13的溫度受到控制’使在一定溫度範圍 破^ /般習知技術係將加熱器設在該感測基材表面,溫度丨 (The format, order and bold text of this manual should not be changed at any time. ※ Do not fill in the symbol part.) ※Application number: ※Application date: 'α, 4 effect 1?<: Classification: ΙΑμ (2 〇 〇 〇1) 1. Name of the invention: (Chinese/English) Gas sensor with diffusion microcavity and its manufacturing method/Gas Sensor with Diffuse Micro Cavity Structure and Method thereof. II. Applicant: (1 in total) Name or name · (Chinese / English) (signature) Industrial Technology Research Institute Representative / (Chinese / English) (signature) Zhang Jinfu / CHANq JIN_FU Residence or business address: ( Chinese/English) No.195, Section 4, Zhongxing Road, Zhudong Town, Hsinchu County / No.195, Sec.4, Chung Hsin Rd., Chu Tung Town, Hsin Chu Hsien, Taiwan, ROC Nationality: (Chinese/English) Republic of China/ ROC III. Inventor: (4 in total) Name··(Chinese/English) 1·Chen Yicheng/CHEN, I-CHERNG 2. Zhang Zhixiang/CHANQCHICH-SHANO 3. He Chaoren/HO, CHAO-JEC 4·Qiu Guo创/CHIU, KUO-CHUANG Nationality: (Chinese/English) 1~4·Republic of China/ROC 1 1325054 一一一_-一. 1讳/! The date of the change of the day is changed to the temperature of the Gongcai 13 is controlled to make it break within a certain temperature range. The technology is to set the heater on the surface of the sensing substrate, the temperature
無法均勻傳導’且該加熱器需要另外附加而使成本增加。 本發明特別將該加熱器Π埋設在該感測基材13内部,使 加熱時溫度傳導達到均勻。因此於本發明之較佳實施例 匕,該感測基材13係利用積層電路的特性將該傳導電極 與該加熱器17以内埋方式埋入於該感測基材13内部, 以使該感測基材13的加熱溫度均勻並且内埋後可降低感 測基材13的體積。除主要控制電路之外其他所需的電阻^ 路設計於感測号材13内部,以達到製程簡化及降低成本。 該微空腔單tl 12包括有一微空腔體18與一設置於哕 微空腔體18上的擴散孔151。而該微空腔體18係用以^ 成一微空腔^01,以提供該氣體感測器10一穩定工作溫度 旅防止環境氣流之干擾。該微空腔體18上設置 151,並藉由該擴散孔151之孔徑大小來限制進人該微*腔 體18之氣體分子,於本發明之實施例係以氧氣為 ςIt is impossible to conduct evenly' and the heater needs additional addition to increase the cost. In particular, the heater is embedded in the interior of the sensing substrate 13 to achieve uniform temperature conduction during heating. Therefore, in the preferred embodiment of the present invention, the sensing substrate 13 is embedded in the sensing substrate 13 by embedding the conductive electrode and the heater 17 in a buried manner by using the characteristics of the laminated circuit. The heating temperature of the substrate 13 is measured to be uniform and the volume of the sensing substrate 13 can be lowered after being buried. In addition to the main control circuit, other required resistors are designed inside the sensing material 13 to achieve process simplification and reduce cost. The microcavity unit tl 12 includes a microcavity body 18 and a diffusion hole 151 disposed on the microcavity body 18. The microcavity 18 is used to form a microcavity ^01 to provide a stable operating temperature of the gas sensor 10 to prevent interference from ambient airflow. The microcavity body 18 is provided with 151, and the gas molecules entering the micro*cavity 18 are limited by the size of the pores of the diffusion hole 151. In the embodiment of the present invention, oxygen is used as the crucible.
體分子’當感測氧氣時’該擴散孔151之直徑需小於心 m以達到氧氣的自發擴散取樣之功能。 、μ 該氣體感測器10之微空腔單元的製作方法 CMOS/MEMS製程之微機電加工方式製作一材 璃、矽晶及其表面鍍膜之微空腔體18,以形成該微, 兀12。如第一圖所示,係為該微空腔體之微機電加工 的蝕刻步驟流程圖。首先,於該微空腔體18之上製 二 直徑小於20//m之擴散孔151,以使待測之氣體如 得以藉該擴散孔151流通並達到氣體自發擴散 二 能。其中’在該微空腔單元的製程上,係先以半導= 製程定義圖案大小後進行等向性㈣的方式製作該微二腔 9 04 丨月心日修正替换頁 18 ㈣沾體黃光製程定義圖案大小後進行非等向性 丨二、:該擴散孔151。其中該等向性細係以濕 ί:而非等向性蝕刻(異向性蝕刻)則以乾蝕 α 5 χ進行。非等向性蝕刻也可以單邊蝕刻或雙 邊蚀刻方式進行。 該氣,感測器10之感測單元的製作方法,係以刮刀成 =技術將!:J厚膜粉體如氧化锆等氧離子導體製成生胚 从並疊壓io製成厚度為5_3G"m之感測基材13。該感測 二13之上、下表面131、132設置複數個感測電極15, ^連接該外部電路,致使料部電路㈣由感應該感測 2 15之電流大小以換算空氣中之含氧濃度。並以共燒或 電加工之方式在感測基材13中内埋複數個傳導電極 16與複數個加熱器I?。 最後以1%極結合或材料共溶點的方式將該微空腔單元 邊感測單元接合封裝成矽基陶瓷混成元件,以組成本發 具擴散微空腔單元之氣體感測器。 因此’本發明可達到下列功效: 2不易叉環境氣流之干擾,提高感測氣體的可靠度。 =具功能性的感測厚膜粉體高溫製程產品相互封裝整 二在低溫CM0S/MEMS製程製作一致化的微空腔結構 3 t ’來達到偵測氣體擴散取樣的一致再現性。 4提供小型化與省電的具微空腔體的氣體感測器。 5•,設加熱器可使溫度傳導均勻,厚膜的厚度降低。 •可使用微機電加工進行微空腔體體積與擴散孔的精密 加工’較昔知技術使用陶瓷疊壓燒結,微空腔體體積與 擴散孔易變形且不易控制。 .採用晶元級封裝(wafer level package)易於量產微小化 1325054 _一一一 • ^^年11月24日修正替故頁 【圖式簡單說明】 第一圖為本發明具擴散微空腔單元之氣體感測器示 意圖。 第二圖為本發明具擴散微空腔單元之氣體感測器的 微空腔單元的製作流程圖。 第三圖為一傳統擴散式氣體感測器結構示意圖。 第四圖為一傳統微孔蓋氣體感測器結構示意圖。 [主要元件符號說明] • 10…具擴散微空腔單元之氣體感測器 11…感測單元 12···微空腔單元 13…感測基材 131…上表面 132…下表面 14…第一感測電極 15…第二感測電極 16…導通電極 ® 17…加熱器 18…微空腔體 151…擴散孔 30…擴散式氣體感測器 40…微孔蓋氣體感測器 31、 41…感測材料層 32、 42…感測電極 431···孔洞結構 43…微孔陶瓷蓋 12The bulk molecule 'when sensing oxygen' is required to have a diameter smaller than the core m to achieve the function of spontaneous diffusion sampling of oxygen. μ The microcavity unit of the gas sensor 10 is fabricated by a micro-electromechanical processing method of a CMOS/MEMS process to form a micro-cavity 18 of a glass, twin and its surface coating to form the micro, 兀12 . As shown in the first figure, it is a flow chart of the etching steps of the microelectromechanical processing of the microcavity. First, two diffusion holes 151 having a diameter of less than 20/m are formed on the microcavity body 18, so that the gas to be tested can flow through the diffusion holes 151 and achieve spontaneous gas diffusion. In the process of the microcavity unit, the micro-cavity is made by first defining the pattern size by semi-conducting = process and then making the isotropic (four) 9 04 丨月心日修正 replacement page 18 (4) smear yellow light After the process defines the pattern size, the anisotropy is performed: the diffusion hole 151. Wherein the isotropic sequence is wet etched instead of isotropic etch (anisotropic etch) with dry etch α 5 χ. Anisotropic etching can also be performed by one-sided etching or double etching. The gas, the sensing unit of the sensor 10 is manufactured by a doctor blade = technology! : J thick film powder such as zirconia or other oxygen ion conductor made of green embryos and laminated io to make a thickness of 5_3G " m sensing substrate 13 . The sensing electrodes 13 and the lower surfaces 131 and 132 are provided with a plurality of sensing electrodes 15 connected to the external circuit, so that the material circuit (4) senses the magnitude of the current of the sensing 2 15 to convert the oxygen concentration in the air. . A plurality of conductive electrodes 16 and a plurality of heaters I are embedded in the sensing substrate 13 by co-firing or electromachining. Finally, the microcavity unit side sensing unit is joint-bonded into a bismuth-based ceramic hybrid element by a 1% pole bond or material co-melting point to form a gas sensor of the present diffusing microcavity unit. Therefore, the present invention can achieve the following effects: 2 It is difficult to interfere with the ambient airflow, and the reliability of the sensing gas is improved. = Functionally sensed thick film powder high-temperature process products are packaged in each other. 2. The microcavity structure 3 t ′ is produced in a low-temperature CM0S/MEMS process to achieve consistent reproducibility of gas diffusion sampling. 4 Provides a miniaturized and power-saving gas sensor with a microcavity. 5•, the heater can make the temperature conduction uniform, and the thickness of the thick film is reduced. • Microelectromechanical machining can be used for precision machining of microcavity volume and diffusion holes. Ceramic lamination sintering is used in the prior art. The volume and diffusion hole of the microcavity are easily deformed and difficult to control. Using the wafer level package, it is easy to mass-produce miniaturization 1325054 _一一一• ^^年年月24日修正定定页 [Simple description] The first picture shows the diffusion microcavity of the present invention A schematic diagram of the gas sensor of the unit. The second figure is a flow chart for fabricating a microcavity unit of a gas sensor with a diffusion microcavity unit according to the present invention. The third figure is a schematic diagram of the structure of a conventional diffused gas sensor. The fourth figure is a schematic structural view of a conventional micro-hole cover gas sensor. [Main component symbol description] • 10... Gas sensor 11 with diffusion microcavity unit... Sensing unit 12··· Microcavity unit 13... Sensing substrate 131... Upper surface 132... Lower surface 14... a sensing electrode 15...a second sensing electrode 16...a conducting electrode®17...a heater 18...a microcavity body 151...a diffusion hole 30...a diffused gas sensor 40...a micropore cover gas sensor 31, 41 ...sensing material layer 32, 42...sensing electrode 431···hole structure 43...microporous ceramic cover 12