TWI323344B - Gas sensor and method of manufacturing thereof - Google Patents

Gas sensor and method of manufacturing thereof Download PDF

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Publication number
TWI323344B
TWI323344B TW95149139A TW95149139A TWI323344B TW I323344 B TWI323344 B TW I323344B TW 95149139 A TW95149139 A TW 95149139A TW 95149139 A TW95149139 A TW 95149139A TW I323344 B TWI323344 B TW I323344B
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Taiwan
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gas sensor
substrate
electrode
sensor according
fabricating
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TW95149139A
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Chinese (zh)
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TW200730819A (en
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Kuo Chuang Chiu
I Cherng Chen
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Ind Tech Res Inst
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1323344 九、發明說明: 【發明所屬之技術領域】 種感關於:ΐ氣體感測器及其製作方法,尤指-…氧化&之乱體感測II及其製作方法。 【先前技術】 傳統氣體感測器’例如今属备 平板以白金線連结至四支ρτΐ 測70件塗附,再將陶究 空方式達到二電路使得該陶瓷平板以懸 熱區塊,可較移定之Λ車父t之體積而形成較大的儲 對地也較耗電4為_=,’ ,度,但相 較小之餘熱區塊,雖較為省電、之體積而形成 定。 散熱性亦佳,但感度不穩 尚有一種氣體感測器,主要将膝士為_ 刷在陶-¾片兩側,再利用非組設於測層印 ,與咖腳兩者連結,最後封裝於^二白j線將電 落,可靠度差。 易*因加熱而使電極脫 另有US20020092780乙案,1 έ士福炎^由 非平板式,體積大且較耗電。—構為反應,式而 【發明内容】 本發明之目的在提供一種氣體感測器, 电極與插槽直接對插做訊號連接而不需另外接線,f兩巧1323344 IX. Description of the invention: [Technical field to which the invention pertains] The sense of kind relates to: a helium gas sensor and a method for fabricating the same, and more particularly to - an oxidation sensor & [Prior Art] The conventional gas sensor's example is now attached to a flat plate with a platinum wire connected to four pieces of ρτΐ 70 pieces of coating, and then the ceramic circuit is brought to two circuits so that the ceramic plate can be suspended in a hot block. Compared with the volume of the shifting car, the larger storage area is also more energy-consuming 4 than _=, ', degrees, but the smaller heat block, although more energy-saving, the volume is formed. The heat dissipation is also good, but the sensitivity is not stable. There is also a gas sensor, which is mainly used to brush the knees on both sides of the Tao-3⁄4 film, and then use the non-group on the test layer to print, and the coffee foot is connected, and finally Packaged in the ^ two white j line will fall, the reliability is poor. Easy* due to heating to remove the electrode. Another US20020092780 B case, 1 gentleman Fuyan ^ by non-flat type, large and more power-hungry. SUMMARY OF THE INVENTION The object of the present invention is to provide a gas sensor in which an electrode and a socket are directly connected to each other for signal connection without additional wiring.

** 可 isA 5 1323344 高產=率,且降低生產成本。 盥崙埶社爐之Γ人一目的是提供一種感測器,利用片狀钍構 極二構、隔熱結構在高溫下達到測試條件也不影;電 製程在 —表 上;一第厂感測層設於該基板之第—表面 面,並分別^^極::細基板之第一表 二表面nm接,一加熱元件設於該基板之第 第二表面,it分^鋪設置於該基板之 -陶=上ί二Ϊ二-二::的製作方法,包含混合** Yes isA 5 1323344 High yield = rate and reduced production costs. The purpose of the Γ 埶 埶 埶 是 是 是 是 是 是 一 一 一 一 一 一 一 一 一 一 一 一 一 一 一 一 一 一 一 一 一 一 一 一 一 一 一 一 一 一 一 一 一 一 一 一 一 一The measuring layer is disposed on the first surface of the substrate, and is respectively connected to the surface of the first surface of the second substrate: a heating element is disposed on the second surface of the substrate, and the layer is placed on the second surface of the substrate. Substrate-Tao=上ί二Ϊ二-二::The production method, including mixing

點、’Ό 刻、一塑化劍、—yv -¾ * v A Ξ:平ft塗佈於一承載膜,使形成生胚^麗琴生S 成為平板狀,·燒結該平板狀 以生胚/ 感測層與一對電極於該基板的第4开面Hf;形成一 與該電極分別連接;及形成一:埶二上感= 板的上,並使該加熱元件與=:= -陶究於體^目的之第—實施例的製作方法,包含混合 =十板狀,燒結該平板狀之生胚以—一 ‘n】:於該基板的第一表面上,“該感測層 上,4=件及二=該基板的第二表面 …凡件與該电極刀別連接。較佳者,該基板 6 感測器1,由於基板10係為陶瓷材質,運用陶瓷導熱性 較差之特性將高溫區侷限加熱區域(即加熱元件30)而不 影響電極21、22、31、32。且電極係以白金塗層製作及 該電極係設於端部,可將具有陶瓷高硬度及強度特性之平 板狀氣體感測器10直接插置於插槽中以進行訊號輸入及 輸出之電氣連接,安裝及測試均極為容易,不需另外接 線,不虞因加熱而造成電極脫落。再者,該基板10藉所 設之散熱孔11可減少該基板10的熱傳導面積,及增加該 基板10與空氣接觸之面積以加強散熱效率。利用施加電 壓於該加熱元件30,使該加熱元件30因電阻效應產生發 熱現象,以此熱源加熱感測元件20使該感測元件20達到 所需之工作溫度,進而對週遭環境的反應性氣體濃度產生 電阻的變化,並利用量測電極21、22將電阻訊號檢測出 來,達到氣體感測之功能。施加於該加熱元件30之電壓 採脈衝電源之方法,使該加熱元件30產生間歇式發熱, 避免該加熱元件30對感測器過度加熱。 其次參考第四圖說明本發明之氣體感測器之製作方 法之第一具體實施例。如第四圖所示,本發明之氣體感 測器之製作方法包含:形成生胚、生胚疊壓、生胚燒結 及印刷,本發明氣體感測器之製作方法之一實施例步驟 如下: 首先,混合一陶瓷粉體、一黏結劑、一塑化劑、一分 散劑於一有機溶劑中,然後塗佈於一承載膜(圖中未示), 使形成生胚(步驟40);接著,疊壓該生胚形成為平板狀(步 驟41);然後,燒結該平板狀之生胚以形成一基板10(步 驟42);再者,形成一感測層20與一對電極21、22於該 基板10的第一表面101上,並使該感測層20與該電極 21、22分別連接(步驟43);及形成一加熱元件30與一對 電極31、32於該基板10的第二表面102上,並使該加熱 元件30與該電極31、32分別連接(步驟44)。 接著參考第五圖說明本發明之氣體感測器之製作方 法之第二具體實施例。 如第五圖所示,本發明之氣體感測器之製作方法包 含:形成生胚、生胚疊壓、生胚燒結、印刷及固定。本 發明氣體感測器之製作方法之另一實施例步驟如下: 混合一陶瓷粉體、一黏結劑、一塑化劑、一分散劑 於一有機溶劑中,然後塗佈於一承載膜,使形成生胚(步 驟50);接著,疊壓該生胚形成為平板狀(步驟51);然 後,燒結該平板狀之生胚以形成一基板1〇(步驟52);再 者,形成一感測層20與一對電極21、22於該基板10 的第一表面101上,並使該感測層20與該電極21、22 分別連接(步驟53);及形成一對電極31、32於該基板 10的第二表面102上(步驟54),最後使一加熱元件30 與該電極31、32分別連接固定於該基板10上(步驟55)。 本實施例與前一實施例不同處在於該加熱元件30 可以外加,亦即不必要設在該基板10上。 於第四圖所示第一具體實施例及第五圖所示第二具 體實施例之混合該陶瓷粉體、該黏結劑、該塑化劑、該 分散劑之各成份重量百分比包括該陶瓷粉體佔85%~92 %,該黏結劑佔4.5%~7.5%,該塑化劑佔3%〜6%,該 分散劑佔〇.5%~1.5%,接著將混合後的陶瓷粉體溶入該 有機溶劑中,該混合後的陶瓷粉體與該有機溶劑的重量 1323344 【圖式簡單說明】 第一圖係本發明之氣體感測器之前視圖。 ’ 第二圖係本發明之氣體感測器之後視圖。 第三圖係本發明之氣體感測器之立體圖。 第四圖係本發明之氣體感測器製作方法第一實施例 之流程圖。 第五圖係本發明之氣體感測器製作方法第二實施例 之流程圖。 [主要元件符號說明] 1…氣體感測器 10…基板 101第一表面 102第二表面 11…孔 20…感測層 21…第一電極 籲 22···第二電極 30…加熱元件 31…第三電極 32··.第四電極 40~44、50~55…步驟 13Point, 'Ό刻,一塑化剑,—yv -3⁄4 * v A Ξ: Flat ft is applied to a carrier film to form a green embryo ^Liqin S into a flat shape, and the flat plate is sintered to produce a green embryo / sensing layer and a pair of electrodes on the fourth opening face Hf of the substrate; forming a connection with the electrode; and forming a: upper sensation = the upper side of the plate, and the heating element and =:= - The method for producing the first embodiment comprises the following steps: mixing = ten plates, sintering the flat-shaped green embryos to -n'n: on the first surface of the substrate, "on the sensing layer 4=件和二=The second surface of the substrate is connected to the electrode blade. Preferably, the substrate 6 sensor 1 is made of ceramic material, and the thermal conductivity of the ceramic is poor. The characteristic limits the high temperature zone to the heating zone (ie, the heating element 30) without affecting the electrodes 21, 22, 31, 32. The electrode is made of a platinum coating and the electrode is provided at the end, which can have high hardness and strength of the ceramic. The characteristic flat gas sensor 10 is directly inserted into the slot for electrical connection of signal input and output, and is installed and tested uniformly. It is easy, no additional wiring is required, and the electrode is not peeled off due to heating. Furthermore, the heat dissipation hole 11 of the substrate 10 can reduce the heat conduction area of the substrate 10 and increase the area of the substrate 10 in contact with the air to enhance heat dissipation. The use of a voltage applied to the heating element 30 causes the heating element 30 to generate heat due to the resistance effect, whereby the heat source heats the sensing element 20 to bring the sensing element 20 to a desired operating temperature, thereby reacting to the surrounding environment. The gas concentration produces a change in resistance, and the resistance signal is detected by the measuring electrodes 21, 22 to achieve the function of gas sensing. The voltage applied to the heating element 30 is pulsed by the power source, so that the heating element 30 generates an interval. Heating is performed to prevent the heating element 30 from overheating the sensor. Next, a first embodiment of the method for fabricating the gas sensor of the present invention will be described with reference to the fourth figure. As shown in the fourth figure, the gas feeling of the present invention is shown. The manufacturing method of the measuring device comprises: forming raw embryos, greening of artificial embryos, sintering of raw embryos and printing, and one of the methods for manufacturing the gas sensor of the present invention The steps are as follows: First, a ceramic powder, a binder, a plasticizer, a dispersant are mixed in an organic solvent, and then coated on a carrier film (not shown) to form a green embryo (step 40); then, stacking the green embryo into a flat shape (step 41); then, sintering the flat-shaped green embryo to form a substrate 10 (step 42); further, forming a sensing layer 20 and a pair The electrodes 21 and 22 are on the first surface 101 of the substrate 10, and the sensing layer 20 and the electrodes 21 and 22 are respectively connected (step 43); and a heating element 30 and a pair of electrodes 31 and 32 are formed thereon. The second surface 102 of the substrate 10 is connected to the heating element 30 and the electrodes 31, 32 respectively (step 44). Next, a second embodiment of the method for fabricating the gas sensor of the present invention will be described with reference to the fifth drawing. . As shown in the fifth figure, the method for fabricating the gas sensor of the present invention comprises: forming green embryos, greening of artificial embryos, sintering of raw embryos, printing and fixing. Another embodiment of the method for fabricating the gas sensor of the present invention is as follows: mixing a ceramic powder, a binder, a plasticizer, a dispersant in an organic solvent, and then coating the film on a carrier film Forming a green embryo (step 50); then, stacking the green embryo into a flat shape (step 51); then, sintering the flat-shaped green embryo to form a substrate 1 (step 52); further, forming a feeling The measuring layer 20 and the pair of electrodes 21, 22 are on the first surface 101 of the substrate 10, and the sensing layer 20 and the electrodes 21, 22 are respectively connected (step 53); and a pair of electrodes 31, 32 are formed. On the second surface 102 of the substrate 10 (step 54), a heating element 30 and the electrodes 31, 32 are finally connected and fixed to the substrate 10 (step 55). This embodiment differs from the previous embodiment in that the heating element 30 can be externally applied, that is, it is not necessarily provided on the substrate 10. The ceramic powder, the binder, the plasticizer, and the dispersant are mixed with the ceramic powder according to the first embodiment shown in the fourth embodiment and the second embodiment shown in the fifth embodiment. The body accounts for 85%~92%, the binder accounts for 4.5%~7.5%, the plasticizer accounts for 3%~6%, the dispersant accounts for 5%~1.5%, and then the mixed ceramic powder dissolves. Into the organic solvent, the weight of the mixed ceramic powder and the organic solvent is 1,323,344. [Brief Description] The first drawing is a front view of the gas sensor of the present invention. The second figure is a rear view of the gas sensor of the present invention. The third figure is a perspective view of the gas sensor of the present invention. The fourth drawing is a flow chart of the first embodiment of the gas sensor manufacturing method of the present invention. Fig. 5 is a flow chart showing a second embodiment of the gas sensor manufacturing method of the present invention. [Main component symbol description] 1...Gas sensor 10...substrate 101 first surface 102 second surface 11...hole 20...sensing layer 21...first electrode 2222···second electrode 30...heating element 31... Third electrode 32··. fourth electrode 40~44, 50~55...Step 13

Claims (1)

1323344 年丨刚日修正替換頁丨 十、申請專利範圍: 1. 一種氣體感測器,包含: 一基板,具有一第一表面與一第二表面; 一感測層,設於該基板之第一表面上; 一第一電極與一第二電極係設置於該基板之第一表 面,並分別與該感測層連接; 一加熱元件,設於該基板之第二表面上;及 一第三電極與一第四電極係設置於該基板之第二表 面,並分別與該加熱元件連接。 2. 如申請專利範圍第1項所述之氣體感測器,其中該基板係 為平板狀陶瓷基板,該陶瓷基板係由陶瓷粉體所製成。 3. 如申請專利範圍第2項所述之氣體感測器,其中該陶粉體 係以低鈉氧化鋁為主要成份。 4. 如申請專利範圍第3項所述之氣體感測器,其中該低鈉氧 化銘之含量為80-96%。 5. 如申請專利範圍第1項所述之氣體感測器,其中該基板厚 度為 500-2000 /z m。 6. 如申請專利範圍第1項所述之氣體感測器,其中該感測層 之材料係選自於 Sn〇2、ZnO、Fe2〇3、In2〇3、W03 及 Ag2〇 之一者。 7. 如申請專利範圍第1項所述之氣體感測器,其中該加熱元 件之材料係為Ru〇2或Pt。 8. 如申請專利範圍第1項所述之氣體感測器,其中該加熱元 件係為塗層於該基板上。 9. 如申請專利範圍第1項所述之氣體感測器,其中於該第一 電極與該第二電極間設一散熱孔。 14 1323344 卿㈣日修正替換頁 10. 如申請專利範圍第1項所述之氣體感測器,其中該第一 電極、該第二電極、該第三電極及該第四電極係為白金、金 或銀。 11. 如申請專利範圍第1項所述之氣體感測器,其中該第一 電極、該第二電極、該第三電極及該第四電極係位於基板一 ' 側端部。 • 12.如申請專利範圍第1項所述之氣體感測器,其中該加熱 元件係非固定於該基板上。 • 13.如申請專利範圍第1項所述之氣體感測器,其中該基板 上具有一散熱孔。 14. 一種氣體感測器之製作方法,包含: 混合一陶瓷粉體、一黏結劑、一塑化劑、一分散劑 於一有機溶劑中,然後塗佈於一承載膜,使形成生胚; 疊壓該生胚形成為平板狀; 燒結該平板狀之生胚以形成一基板; 形成一感測層與一對電極於該基板的第一表面上, 並使該感測層與該電極分別連接;及 ® 形成一加熱元件與一對電極於該基板的第二表面 上,並使該加熱元件與該電極分別連接。 15. —種氣體感測器之製作方法,包含: 混合一陶瓷粉體、一黏結劑、一塑化劑、一分散劑 於一有機溶劑中,然後塗佈於一承載膜,使形成生胚; 疊壓該生胚形成為平板狀; 燒結該平板狀之生胚以形成一基板; 形成一感測層與一對電極於該基板的第一表面上, 並使該感測層與該電極分別連接;及 15 1323344 _ ^ 讲年ί〇月巧日修正替換頁 形成一對電極於該基板的第二表面上,並使一加熱 元件與該電極分別連接。 16. 如申請專利範圍第14項或第15項所述之氣體感測器之 製作方法,其中混合該陶瓷粉體、該黏結劑、該塑化劑、該 分散劑之各成份重量百分比包括該陶瓷粉體佔8 5 %〜9 2 %,該黏結劑佔4.5%〜7.5%,該塑化劑佔3%〜6%,該分 . 散劑佔0.5%〜1.5%,接著將混合後的陶瓷粉體溶入該有機 溶劑中,該混合後的陶瓷粉體與該有機溶劑的重量百分比係 • 該混合後的陶瓷粉體佔35%〜55%,而該有機溶劑佔45% 〜65%。 17. 如申請專利範圍第16項所述之氣體感測器之製作方法, 其中該陶瓷粉體係以低鈉氧化鋁為主要成份。 18. 如申請專利範圍第17項所述之氣體感測器之製作方法, 其中該低鈉氧化I呂之含量為80-96%。 19. 如申請專利範圍第16項所述之氣體感測器之製作方法, 其中該黏結劑係為PVA或PVB。 20. 如申請專利範圍第16項所述之氣體感測器之製作方法, ® 其中該塑化劑係為DOP或DBP或PEG。 21. 如申請專利範圍第16項所述之氣體感測器之製作方法, 其中該分散劑係為KD1。 22. 如申請專利範圍第16項所述之氣體感測器之製作方法, 其中該有機溶劑係為曱苯正丁醇乙醇。 23. 如申請專利範圍第14項或第15項所述之氣體感測器之 製作方法,其中該有機溶劑經過球磨混合均勻後,經除氣泡 和調整該有機溶劑之固含量(Solid Loding)及黏度,然後進行 到刀作業,使乾燥而形成生胚。 16 1323344 _ - ^丨0少)日修正替換頁 24. 如申請專利範圍第14項或第15項所述之氣體感測器之 製作方法,其中該平板狀之生胚厚度為500-2000/zm。 25. 如申請專利範圍第14項或第15項所述之氣體感測器之 製作方法,其中該感測層材料係選自於Sn02、ZnO、Fe203、 In203、W03 及 Ag20 中之一者。 • 26.如申請專利範圍第14項或第15項所述之氣體感測器之 • 製作方法,其中該加熱元件之材料係為Ru02或Pt。 27. 如申請專利範圍第14項或第15項所述之氣體感測器之 • 製作方法,其中於該基板上形成一散熱孔。 28. 如申請專利範圍第14項或第15項所述之氣體感測器之 製作方法,其中該電極係為白金、金或銀。 29. 如申請專利範圍第14項或第15項所述之氣體感測器之 製作方法,其中燒結該平板狀之生胚以形成一基板後,形成 一孔於該基板上。1323344 丨 修正 修正 替换 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 a first electrode and a second electrode are disposed on the first surface of the substrate and respectively connected to the sensing layer; a heating element is disposed on the second surface of the substrate; and a third The electrode and a fourth electrode are disposed on the second surface of the substrate and are respectively connected to the heating element. 2. The gas sensor according to claim 1, wherein the substrate is a flat ceramic substrate made of a ceramic powder. 3. The gas sensor of claim 2, wherein the ceramic powder body is based on low sodium alumina. 4. The gas sensor of claim 3, wherein the low sodium oxide content is 80-96%. 5. The gas sensor of claim 1, wherein the substrate has a thickness of 500 to 2000 / z m. 6. The gas sensor of claim 1, wherein the material of the sensing layer is selected from the group consisting of Sn2, ZnO, Fe2〇3, In2〇3, W03, and Ag2〇. 7. The gas sensor of claim 1, wherein the heating element is made of Ru〇2 or Pt. 8. The gas sensor of claim 1, wherein the heating element is coated on the substrate. 9. The gas sensor of claim 1, wherein a heat dissipation hole is disposed between the first electrode and the second electrode. The gas sensor of claim 1, wherein the first electrode, the second electrode, the third electrode, and the fourth electrode are platinum and gold. Or silver. 11. The gas sensor of claim 1, wherein the first electrode, the second electrode, the third electrode, and the fourth electrode are located at a side end of the substrate. 12. The gas sensor of claim 1, wherein the heating element is not fixed to the substrate. 13. The gas sensor of claim 1, wherein the substrate has a heat dissipation hole. A method for fabricating a gas sensor, comprising: mixing a ceramic powder, a binder, a plasticizer, a dispersing agent in an organic solvent, and then coating the film on a carrier film to form a green embryo; Laminating the green embryo into a flat shape; sintering the flat shaped green embryo to form a substrate; forming a sensing layer and a pair of electrodes on the first surface of the substrate, and respectively forming the sensing layer and the electrode Connecting; and forming a heating element and a pair of electrodes on the second surface of the substrate, and connecting the heating element to the electrode, respectively. 15. A method of fabricating a gas sensor comprising: mixing a ceramic powder, a binder, a plasticizer, a dispersant in an organic solvent, and then coating the carrier film to form a green embryo Laminating the green embryo into a flat shape; sintering the flat shaped green embryo to form a substrate; forming a sensing layer and a pair of electrodes on the first surface of the substrate, and causing the sensing layer and the electrode Connected separately; and 15 1323344 _ ^ 讲 〇 修正 修正 修改 修改 修改 修改 修改 修改 修改 修改 修改 修改 修改 修改 修改 修改 修改 修改 修改 修改 修改 修改 修改 修改 修改 修改 修改 修改 修改 修改 修改 修改 修改 修改 修改 修改16. The method of manufacturing a gas sensor according to claim 14 or 15, wherein mixing the ceramic powder, the binder, the plasticizer, and the weight percentage of each component of the dispersing agent includes the The ceramic powder accounts for 85 %~92%, the binder accounts for 4.5%~7.5%, the plasticizer accounts for 3%~6%, the powder accounts for 0.5%~1.5%, and then the mixed ceramics The powder is dissolved in the organic solvent, and the weight percentage of the mixed ceramic powder to the organic solvent is 35% to 55% of the mixed ceramic powder, and the organic solvent is 45% to 65%. 17. The method of fabricating a gas sensor according to claim 16, wherein the ceramic powder system has low sodium alumina as a main component. 18. The method of producing a gas sensor according to claim 17, wherein the low sodium oxide I has a content of 80-96%. 19. The method of fabricating a gas sensor according to claim 16, wherein the binder is PVA or PVB. 20. The method of making a gas sensor according to claim 16, wherein the plasticizer is DOP or DBP or PEG. 21. The method of producing a gas sensor according to claim 16, wherein the dispersing agent is KD1. 22. The method of producing a gas sensor according to claim 16, wherein the organic solvent is terpene n-butanol ethanol. 23. The method of fabricating a gas sensor according to claim 14 or claim 15, wherein the organic solvent is uniformly mixed by a ball mill, the bubbles are removed, and the solid content of the organic solvent is adjusted (Solid Loding) and The viscosity is then applied to the knife to dry to form a green embryo. 16 1323344 _ - ^ 丨 0 ) 日 日 24 24 24 24 24 24 24 24 24 24 24 24 24 24 24 24 24 24 24 24 24 24 24 24 24 24 24 24 24 24 24 24 24 24 24 24 24 24 24 气体 气体 气体Zm. 25. The method of fabricating a gas sensor according to claim 14 or claim 15, wherein the sensing layer material is selected from one of Sn02, ZnO, Fe203, In203, W03 and Ag20. • The method of fabricating a gas sensor according to claim 14 or 15, wherein the material of the heating element is Ru02 or Pt. 27. The method of fabricating a gas sensor according to claim 14 or 15, wherein a heat dissipation hole is formed in the substrate. 28. The method of fabricating a gas sensor according to claim 14 or 15, wherein the electrode is platinum, gold or silver. 29. The method of fabricating a gas sensor according to claim 14 or claim 15, wherein the flat shaped green body is sintered to form a substrate, and a hole is formed on the substrate. 1717
TW95149139A 2005-12-30 2006-12-27 Gas sensor and method of manufacturing thereof TWI323344B (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8501101B2 (en) 2010-12-03 2013-08-06 Industrial Technology Research Institute Gas sensor

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8501101B2 (en) 2010-12-03 2013-08-06 Industrial Technology Research Institute Gas sensor

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