CN104931559B - A kind of Oxynitride sensor chip and preparation method thereof - Google Patents
A kind of Oxynitride sensor chip and preparation method thereof Download PDFInfo
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- CN104931559B CN104931559B CN201510376504.8A CN201510376504A CN104931559B CN 104931559 B CN104931559 B CN 104931559B CN 201510376504 A CN201510376504 A CN 201510376504A CN 104931559 B CN104931559 B CN 104931559B
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Abstract
The present invention relates to a kind of Oxynitride sensor chip and preparation method thereof.Its technical scheme is：Each element slurry corresponding in adding thermal resistance (1), nitrogen oxides concentration cell (2) and the quick resistance of STF oxygen (3) is printed on to the surface of alumina substrate (4) by several times using screen printing mode, it is sintered every time after printing using corresponding technique, Oxynitride sensor chip is made.Oxynitride sensor chip prepared by the present invention compared with prior art, has and prepares the characteristics of simple and cost is low, prepared Oxynitride sensor chip measurement effect is good and can measure amount of nitrogen oxides and oxygen content simultaneously.
Description
Technical field
The invention belongs to nitrogen oxide in automobile exhaust sensor technical field.A kind of more particularly to NOx sensor core
Piece and preparation method thereof.
Background technology
Vehicle tail gas Oxynitride sensor chip is formed by stacking by six layers of zirconium oxide substrate at present, such as " gas sensing
Device, NOx sensor and the method for manufacturing gas sensor " (US20090242400) patented technology and " correction nitrogen oxidation
The method of thing sensor output signal " (US20080237064) patented technology, the patented technology is by three electrochemistry oxygens
Pump, two chambers, a reference air duct, an adding thermal resistance, lead and eight pins are formed, three electrochemistry oxygen pumps point
It is not main pump, auxiliary pump and measuring pump, main pump is in first chamber, auxiliary pump and measuring pump in second chamber, first chamber and
Linked among two chambers with slit, general structure is complicated.
The operation principle of this Oxynitride sensor chip is that tail gas is first introduced to first chamber, and takes out institute by main pump
Some oxygen；It is then introduced into second chamber and the oxygen in tail gas is further taken out by auxiliary pump, is down to oxygen concentration in tail gas
It is extremely low；Then the nitrogen oxides in tail gas is decomposed into oxygen and nitrogen under the activated electrode effect of measuring pump, finally by survey
The carrying current of amount pump draws the content of corresponding nitrogen oxides.This Oxynitride sensor chip is complicated, cost of manufacture
It is highly difficult big.
In recent years, Jing Gao etc. propose a kind of new NOx sensor (J. Gao et al./Sensors
And Actuators B 154 (2011) 106-110), this NOx sensor is based on electrochemical principle, with oxidation
The ionic conductivity of zirconium, and zirconium oxide is printed on alumina substrate, printed respectively on the both sides of zirconium oxide activated electrode and
Non-live polarizing electrode, and in activated electrode and non-live one layer of Catalytic Layer of polarizing electrode overlying lid to exclude carbon monoxide and hydrocarbon
Interference to sensor electric signal, so as to improve selectivity of the sensor to nitrogen oxides.Oxygen content can be quick with simple oxygen
Resistance measures, such as STF oxygen quick resistance（That is the quick resistance of Fe2O3 doping strontium titanates oxygen）There are relatively good gas sensitive resistors.It is but this
Novel nitrogen oxide sensor still has deficiency：This novel nitrogen oxide sensor is still deposited in the selection of electrode material
In problem, cause its signal easily in by vehicle exhaust carbon monoxide and hydrocarbon disturbed；This new nitrogen oxidation
Without integrated lambda sensor on the substrate of thing sensor, it require that being worked under the cooperation of lambda sensor, cause in reality
Cost increase during use.
The content of the invention
It is contemplated that overcome prior art defect, it is therefore an objective to provide and a kind of prepare simple and low cost nitrogen oxides biography
The preparation method of sensor chip, with the Oxynitride sensor chip of this method preparation is simple in construction, measurement effect is good and energy is same
When measure amount of nitrogen oxides and oxygen content.
To achieve the above object, the technical solution adopted by the present invention is：The Oxynitride sensor chip is to heat
Resistance, nitrogen oxides concentration cell and the quick resistance of STF oxygen are integrated in the surface of alumina substrate.Adding thermal resistance, nitrogen oxides are dense
Difference battery and the quick resistance of STF oxygen are in the projected position of alumina substrate：Adding thermal resistance is symmetrically distributed in leaning on for alumina substrate
At nearly periphery；The center of nitrogen oxides concentration cell is 4mm with alumina substrate left end distance；The center of the quick resistance of STF oxygen with
The distance of alumina substrate left end is 10mm；The center of nitrogen oxides concentration cell and the quick resistance of STF oxygen are centrally located at oxidation
On the line of symmetry of aluminium substrate.
The preparation method of the Oxynitride sensor chip is：
Step 1: the dielectric substrate of the front printing nitrogen oxides concentration cell in alumina substrate, then 1450~
0.5 ~ 1h is sintered under the conditions of 1550 DEG C.
Step 2: the transition zone of the front printing quick resistance of STF oxygen in alumina substrate, then in 1100~1400 DEG C of bars
0.5 ~ 1h is sintered under part.
Step 3: the resistive layer of the front printing quick resistance of STF oxygen in alumina substrate, then in 1100~1350 DEG C of bars
0.5 ~ 1h is sintered under part.
Step 4: the resistance wire of the front printing adding thermal resistance in alumina substrate, in the back face printing of alumina substrate
The pin of the resistance wire of adding thermal resistance, the lead for the resistance wire being connected with resistance wire is printed in the front of alumina substrate, by two
The lead of root resistance wire is each passed through alumina substrate, then in the back face printing of alumina substrate and the pin pair of two resistance wires
The lead for the resistance wire that should be connected.
Then activated electrode, the nitrogen oxides concentration cell of nitrogen oxides concentration cell are printed in the front of alumina substrate
Non-live polarizing electrode, the lead of activated electrode of nitrogen oxides concentration cell, the activated electrode of nitrogen oxides concentration cell draw
Pin, nitrogen oxides concentration cell non-live polarizing electrode lead and nitrogen oxides concentration cell non-live polarizing electrode pin, then
The pin of the terminal of the terminal of the printing quick resistance of STF oxygen, the lead of the terminal of the quick resistance of STF oxygen and the quick resistance of STF oxygen, finally prints
The Catalytic Layer of brush nitrogen oxides concentration cell.
Step 5: on the basis of step 4,0.5 ~ 1h is sintered under the conditions of 900~1100 DEG C, nitrogen oxides is made and passes
Sensor chip.
The printing refers at ambient temperature, using screen printing mode to adding thermal resistance, nitrogen oxides concentration cell
With in the quick resistance of STF oxygen each element use corresponding to slurry printed.
Described adding thermal resistance, which is symmetrically distributed at the close periphery of alumina substrate, to be referred to：The resistance wire pair of adding thermal resistance
Title is distributed in the positive left end of alumina substrate at periphery, and the left-half of the lead of the resistance wire of adding thermal resistance is symmetrically divided
Cloth is at the close periphery of the positive middle part left-half of alumina substrate, the right half part of the lead of the resistance wire of adding thermal resistance
It is symmetrically distributed at the close periphery of the middle part right half part at the alumina substrate back side, the pin of the resistance wire of adding thermal resistance is symmetrical
The right-hand member at the alumina substrate back side is distributed at periphery.
Or adding thermal resistance is symmetrically distributed at the close periphery of alumina substrate and referred to：Adding thermal resistance is symmetrically distributed in oxidation
At the close periphery at the aluminium substrate back side.
The flat shape of the alumina substrate is the entirety that narrow two rectangles in left wide right side form, two rectangles it is symmetrical
Line is same straight line, or the flat shape of the alumina substrate is a rectangle.
The resistance of the resistance wire of the printing adding thermal resistance is 2 ~ 20 ohm.
Described uses corresponding starch to each element in adding thermal resistance, nitrogen oxides concentration cell and the quick resistance of STF oxygen
Material carries out printing and referred to：
Slurry is oxygen ion conductive ceramic slurry used by printing the dielectric substrate of nitrogen oxides concentration cell, oxonium ion
Conductivity ceramics slurry is 8% molar fraction yttria-stabilized zirconia slurry；In 8% molar fraction yttria-stabilized zirconia slurry
Zirconium oxide particle diameter be less than 0.5 μm；
Slurry is platinum rhodium slurry used by printing the activated electrode of nitrogen oxides concentration cell, platinum content in platinum rhodium slurry
For 95wt%, rhodium content is 5wt% in platinum rhodium slurry；In platinum rhodium slurry：The particle diameter of platinum is 0.01~0.5 μm, and the particle diameter of rhodium is
0.01~0.5 μm；
Slurry is golden platinum slurry used by printing the non-live polarizing electrode of nitrogen oxides concentration cell, and platinum contains in golden platinum slurry
Measure as 80wt%, gold content is 20wt% in golden platinum slurry；In golden platinum slurry：The particle diameter of gold is 0.01~0.5 μm, and the particle diameter of platinum is
0.01~0.5 μm；
Slurry is platiniferous 4.5wt% alumina slurry, platiniferous used by printing the Catalytic Layer of nitrogen oxides concentration cell
In 4.5wt% alumina slurry：The particle diameter of platinum is 0.01~0.5 μm, and the particle diameter of aluminum oxide is less than 0.5 μm；
Print the resistance wire of adding thermal resistance, the lead of resistance wire of adding thermal resistance, adding thermal resistance resistance wire pin, nitrogen
The lead of the activated electrode of oxide concentration cell, the pin of the activated electrode of nitrogen oxides concentration cell, nitrogen oxides concentration difference
The lead of the non-live polarizing electrode of battery, the pin of the non-live polarizing electrode of nitrogen oxides concentration cell, the quick resistance of STF oxygen terminal,
Slurry is starched for platinum used by the pin of the lead of the terminal of the quick resistance of STF oxygen and the terminal of the quick resistance of STF oxygen, the platinum in platinum slurry
Particle diameter is 0.01~0.5 μm；
Slurry aoxidizes for 20wt% 8% molar fraction stabilized with yttrium oxide used by printing the transition zone of the quick resistance of STF oxygen
The STF mixed slurries of zirconium and 80wt%, STF particle diameter is less than 0.5 μm in 80wt% STF slurries；
Slurry is STF slurries used by printing the resistive layer of the quick resistance of STF oxygen, and STF particle diameter is less than in STF slurries
0.5μm。
Due to there is following good effect compared with prior art using above-mentioned technical proposal, the present invention：
First, the Oxynitride sensor chip in the present invention is simple in construction.Vehicle tail gas NOx sensor core at present
Piece is formed by stacking by six layers of zirconium oxide substrate, by three electrochemistry oxygen pumps, two chambers, a reference air duct, one
Adding thermal resistance, lead and eight pins are formed, and three electrochemistry oxygen pumps are main pump, auxiliary pump and measuring pump respectively, and main pump is the
One chamber, auxiliary pump and measuring pump are linked among second chamber, first chamber and second chamber with slit, and general structure is multiple
It is miscellaneous.And the present invention eliminates three electrochemistry oxygen pumps, two chambers, a reference air duct and two pins in structure,
Greatly simplifie the structure of Oxynitride sensor chip.
2nd, preparation process of the invention is simple.Existing Oxynitride sensor chip is due to complicated, small volume original
Cause, make very difficult：Need to be punched two chambers, a slit and a reference gas passage on zirconium oxide substrate；This
Two chambers, a slit and a reference gas passage pole in the overlapping of six layers of zirconium oxide substrate, compacting and sintering process
Yielding, chamber, slit and reference gas channel blockage, cracking can be caused by deforming under serious situation, cause nitrogen oxides to pass
Sensor chip failure.And the present invention is due to simple in construction, it is only necessary to print according to preparation process on one layer of alumina substrate with
The corresponding element of sintering, eliminates the preparation process of punching, overlapping and compacting, preparation process has been obtained larger simplification.
3rd, preparation cost of the invention is low.Relative to existing Oxynitride sensor chip, present invention eliminates three electricity
Chemical oxygen pump, two chambers, a reference air duct, three pins, save the noble metal used in these structures；And by
It is simple in preparation process of the present invention, save the expense of the preparation process of punching, overlapping and compacting；Simultaneously because make in the present invention
With one layer of alumina substrate rather than as six layers of zirconium oxide substrate in existing Oxynitride sensor chip, save and prepare oxygen
Change a large amount of expenses spent during zirconium base piece.
4th, measurement effect of the invention is good, and can measure the content of nitrogen oxides and the content of oxygen simultaneously.The present invention
The transmittance process in the slit of pump oxygen process and gas between two chambers in two chambers is eliminated, can be simply straight
The content to oxygen in gas and nitrogen oxides connect measures, therefore has preferable measurement effect.The present invention is aoxidizing
Nitrogen oxides concentration cell and the quick resistance of STF oxygen are integrated with simultaneously on aluminium substrate, the quick resistance of STF oxygen can accurately measure car tail
Oxygen content in gas, nitrogen oxides concentration cell coordinate the quick resistance of STF oxygen accurately to measure the nitrogen oxides in vehicle exhaust
Content.
Therefore, the present invention, which has, prepares the characteristics of simple and cost is low, the measurement of prepared Oxynitride sensor chip
Effect is good and can measure amount of nitrogen oxides and oxygen content simultaneously.
Brief description of the drawings
Fig. 1 is a kind of structural representation of the present invention；
Fig. 2 is a kind of structural representation of nitrogen oxides concentration cell 2 in Fig. 1；
Fig. 3 is a kind of structural representation of the quick resistance 3 of STF oxygen in Fig. 1；
Fig. 4 is a kind of structural representation of adding thermal resistance 1 in Fig. 1；
Fig. 5 is Fig. 4 schematic rear view；
Fig. 6 is another structural representation of the present invention；
Fig. 7 is Fig. 6 schematic rear view.
Embodiment
The invention will be further described with reference to the accompanying drawings and detailed description, not to the limit of its protection domain
System.
Embodiment 1
A kind of Oxynitride sensor chip and preparation method thereof.The Oxynitride sensor chip is by adding thermal resistance
1st, nitrogen oxides concentration cell 2 and the quick resistance 3 of STF oxygen are integrated in the surface of alumina substrate 4.Adding thermal resistance 1, nitrogen oxides are dense
Difference battery 2 and the quick resistance 3 of STF oxygen are as shown in Figure 1 in the projected position of alumina substrate 4：Adding thermal resistance 1 is symmetrically distributed in oxidation
At the close periphery of aluminium substrate 4；The center of nitrogen oxides concentration cell 2 is 4mm with the left end of alumina substrate 4 distance；STF oxygen is quick
The center of resistance 3 and the distance of the left end of alumina substrate 4 are 10mm；The center of nitrogen oxides concentration cell 2 and the quick resistance of STF oxygen
3 are centrally located on the line of symmetry of alumina substrate 4.
The preparation method of the Oxynitride sensor chip comprises the concrete steps that：
Step 1: the as shown in Fig. 2 dielectric substrate of the front printing nitrogen oxides concentration cell 2 in alumina substrate 4
24,0.5 ~ 1h is then sintered under the conditions of 1450~1550 DEG C.
Step 2: the as shown in figure 3, transition zone 31, Ran Hou of the front printing quick resistance 3 of STF oxygen in alumina substrate 4
0.5 ~ 1h is sintered under the conditions of 1100~1400 DEG C.
Step 3: the as shown in figure 3, resistive layer 33, Ran Hou of the front printing quick resistance 3 of STF oxygen in alumina substrate 4
0.5 ~ 1h is sintered under the conditions of 1100~1350 DEG C.
Step 4: the as shown in figure 4, resistance wire 11 of the front printing adding thermal resistance 1 in alumina substrate 4；Such as Fig. 5 institutes
Show, in the pin 13 of the resistance wire of the back face printing adding thermal resistance 1 of alumina substrate 4；As shown in Figure 4 and Figure 5, in alumina base
The lead 12 for the resistance wire that the front printing of piece 4 is connected with resistance wire 11, oxidation is each passed through by the lead 12 of two resistance wires
Aluminium substrate 4, then in the back face printing of alumina substrate 4 and the lead of the resistance wire of the corresponding connection of the pin 13 of two resistance wires
12。
As shown in Fig. 2 activated electrode 21, nitrogen oxidation in the front printing nitrogen oxides concentration cell 2 of alumina substrate 4
The non-live polarizing electrode 22 of thing concentration cell 2, the lead 27 of the activated electrode of nitrogen oxides concentration cell 2, nitrogen oxides concentration difference electricity
The lead 25 and nitrogen oxides concentration cell 2 of the pin 28 of the activated electrode of pond 2, the non-live polarizing electrode of nitrogen oxides concentration cell 2
Non-live polarizing electrode pin 26.Again as shown in figure 3, alumina substrate 4 front printing the quick resistance 3 of STF oxygen terminal 32,
The pin 35 of the lead 34 of the terminal of the quick resistance 3 of STF oxygen and the terminal of the quick resistance 3 of STF oxygen.Finally as shown in Fig. 2 in aluminum oxide
The Catalytic Layer 23 of the front printing nitrogen oxides concentration cell 2 of substrate 4.
Step 5: on the basis of step 4,0.5 ~ 1h is sintered under the conditions of 900~1100 DEG C, nitrogen oxides is made and passes
Sensor chip.
The printing refers at ambient temperature, using screen printing mode to adding thermal resistance 1, nitrogen oxides concentration cell
Slurry corresponding to each element use in the quick resistance 3 of 2 and STF oxygen is printed.
Described adding thermal resistance 1, which is symmetrically distributed at the close periphery of alumina substrate 4, to be referred to：The resistance of adding thermal resistance 1
Silk 11 is symmetrically distributed in 4 positive left end of alumina substrate at periphery, and left the half of the lead 12 of the resistance wire of adding thermal resistance 1
Partial symmetry is distributed at the close periphery of the positive middle part left-half of alumina substrate 4, and the resistance wire of adding thermal resistance 1 draws
The right half part of line 12 is symmetrically distributed at the close periphery of the middle part right half part at the back side of alumina substrate 4, adding thermal resistance 1
The pin 13 of resistance wire is symmetrically distributed in the right-hand member at the back side of alumina substrate 4 at periphery.
As shown in Fig. 1 ~ Fig. 5, the flat shape of the alumina substrate 4 is the whole of the narrow two rectangles composition in the left wide right side
Body, the line of symmetry of two rectangles is same straight line.
The resistance of the resistance wire 11 of the printing adding thermal resistance 1 is 2 ~ 20 ohm.
Corresponding to described each element in adding thermal resistance 1, nitrogen oxides concentration cell 2 and the quick resistance 3 of STF oxygen uses
Slurry carries out printing and referred to：
Slurry is oxygen ion conductive ceramic slurry used by the dielectric substrate 24 of printing nitrogen oxides concentration cell 2, oxygen
Ionic conductivity ceramics slurry is 8% molar fraction yttria-stabilized zirconia slurry；8% molar fraction yttria-stabilized zirconia is starched
Zirconium oxide particle diameter in material is less than 0.5 μm；
Slurry is platinum rhodium slurry used by the activated electrode 21 of printing nitrogen oxides concentration cell 2, platinum in platinum rhodium slurry
Content is 95wt%, and rhodium content is 5wt% in platinum rhodium slurry；In platinum rhodium slurry：The particle diameter of platinum is 0.01~0.5 μm, the particle diameter of rhodium
For 0.01~0.5 μm；
Slurry is golden platinum slurry used by the non-live polarizing electrode 22 of printing nitrogen oxides concentration cell 2, in golden platinum slurry
Platinum content is 80wt%, and gold content is 20wt% in golden platinum slurry；In golden platinum slurry：The particle diameter of gold is 0.01~0.5 μm, the grain of platinum
Footpath is 0.01~0.5 μm；
The alumina slurry that slurry is platiniferous 4.5wt% used by the Catalytic Layer 23 of printing nitrogen oxides concentration cell 2,
In platiniferous 4.5wt% alumina slurry：The particle diameter of platinum is 0.01~0.5 μm, and the particle diameter of aluminum oxide is less than 0.5 μm；
Print the resistance wire 11 of adding thermal resistance 1, the lead 12 of resistance wire of adding thermal resistance 1, the resistance wire of adding thermal resistance 1
Pin 13, the lead 27 of activated electrode of nitrogen oxides concentration cell 2, nitrogen oxides concentration cell 2 activated electrode pin
28th, the lead 25 of the non-live polarizing electrode of nitrogen oxides concentration cell 2, nitrogen oxides concentration cell 2 non-live polarizing electrode pin
26th, the pin of the terminal of the lead 34 of the terminal of the quick resistance 3 of terminal 32, STF oxygen of the quick resistance 3 of STF oxygen and the quick resistance 3 of STF oxygen
Slurry is starched for platinum used by 35, and the platinum grain footpath in platinum slurry is 0.01~0.5 μm；
The 8% molar fraction stabilized with yttrium oxide oxygen that slurry is 20wt% used by the transition zone 31 of the printing quick resistance 3 of STF oxygen
Change zirconium and 80wt% STF mixed slurries, STF particle diameter is less than 0.5 μm in 80wt% STF slurries；
Slurry is STF slurries used by printing the resistive layer 33 of the quick resistance 3 of STF oxygen, and STF particle diameter is small in STF slurries
In 0.5 μm.
Embodiment 2
A kind of Oxynitride sensor chip and preparation method thereof.In addition to following situations, remaining is the same as embodiment 1：
The present embodiment is as shown in fig. 7, adding thermal resistance 1 is symmetrically distributed at the close periphery of alumina substrate 4 refers to：Heating
Resistance 1 is symmetrically distributed at the close periphery at the back side of alumina substrate 4.
As shown in Figure 6 and Figure 7, the flat shape of the alumina substrate 4 is a rectangle to the present embodiment
Present embodiment has following good effect compared with prior art：
First, the Oxynitride sensor chip in present embodiment is simple in construction.Vehicle tail gas nitrogen oxides at present
Sensor chip is formed by stacking by six layers of zirconium oxide substrate, is led to by three electrochemistry oxygen pumps, two chambers, a reference air
Road, an adding thermal resistance, lead and eight pins are formed, and three electrochemistry oxygen pumps are main pump, auxiliary pump and measuring pump respectively, are led
Pump is linked in first chamber, auxiliary pump and measuring pump among second chamber, first chamber and second chamber with slit, overall knot
Structure is complicated.And present embodiment eliminates three electrochemistry oxygen pumps, two chambers, a reference air duct in structure
With two pins, the structure of Oxynitride sensor chip is greatly simplified.
2nd, the preparation process of present embodiment is simple.Existing Oxynitride sensor chip is due to complicated, body
The reason for product is small, make very difficult：Need to be punched two chambers, a slit and a reference gas on zirconium oxide substrate
Passage；The two chambers, a slit and a reference gas passage are in the overlapping of six layers of zirconium oxide substrate, compacting and sintered
Easily deformed in journey, chamber, slit and reference gas channel blockage, cracking can be caused by deforming under serious situation, cause nitrogen oxygen
Compound sensor chip fails.And present embodiment is due to simple in construction, it is only necessary to according to preparation process in one layer of oxidation
Printed on aluminium substrate and sinter corresponding element, eliminated the preparation process of punching, overlapping and compacting, obtain preparation process
Larger simplification.
3rd, the preparation cost of present embodiment is low.Relative to existing Oxynitride sensor chip, this specific implementation
Mode eliminates three electrochemistry oxygen pumps, two chambers, a reference air duct, three pins, saves in these structures
The noble metal used；And because present embodiment preparation process is simple, save the preparation process of punching, overlapping and compacting
Expense；Simultaneously because using one layer of alumina substrate rather than as existing NOx sensor core in present embodiment
Six layers of zirconium oxide substrate in piece, save a large amount of expenses for preparing and being spent during zirconium oxide substrate.
4th, the measurement effect of present embodiment is good, and can measure the content of nitrogen oxides and containing for oxygen simultaneously
Amount.Present embodiment eliminates the biography in the slit of pump oxygen process and gas between two chambers in two chambers
Process is passed, simply directly the content of oxygen in gas and nitrogen oxides can be measured, therefore with preferably measurement
Effect.Present embodiment is integrated with nitrogen oxides concentration cell 2 and the quick resistance of STF3 oxygen simultaneously on alumina substrate 4,
The quick resistance of STF3 oxygen can accurately measure the oxygen content in vehicle exhaust, and nitrogen oxides concentration cell 2 coordinates the quick resistance of STF3 oxygen
The content of the nitrogen oxides in vehicle exhaust can accurately be measured.
Therefore, present embodiment, which has, prepares the characteristics of simple and cost is low, prepared NOx sensor
Chip measurement effect is good and can measure amount of nitrogen oxides and oxygen content simultaneously.
Claims (2)
1. a kind of preparation method of Oxynitride sensor chip, it is characterised in that the Oxynitride sensor chip is to add
Thermal resistance (1), nitrogen oxides concentration cell (2) and the quick resistance of STF oxygen (3) are integrated in the surface of alumina substrate (4)；Heating electricity
Resistance (1), nitrogen oxides concentration cell (2) and the quick resistance of STF oxygen (3) are in the projected position of alumina substrate (4)：Adding thermal resistance
(1) it is symmetrically distributed at the close periphery of alumina substrate (4), the center of nitrogen oxides concentration cell (2) and alumina substrate
(4) left end distance is 4mm, and the center of the quick resistance of STF oxygen (3) and the distance of alumina substrate (4) left end are 10mm；Nitrogen oxides
The center of concentration cell (2) and the quick resistance of STF oxygen (3) are centrally located on the line of symmetry of alumina substrate (4)；
The preparation method of the Oxynitride sensor chip is：
Step 1: the dielectric substrate (24) of the front printing nitrogen oxides concentration cell (2) in alumina substrate (4), Ran Hou
0.5~1h is sintered under the conditions of 1450~1550 DEG C；
Step 2: the transition zone (31) of the front printing quick resistance of STF oxygen (3) in alumina substrate (4), then 1100~
0.5~1h is sintered under the conditions of 1400 DEG C；
Step 3: the resistive layer (33) of the front printing quick resistance of STF oxygen (3) in alumina substrate (4), then 1100~
0.5~1h is sintered under the conditions of 1350 DEG C；
Step 4: the resistance wire (11) of the front printing adding thermal resistance (1) in alumina substrate (4), in alumina substrate (4)
The pin (13) of the resistance wire of back face printing adding thermal resistance (1), connect in front printing and the resistance wire (11) of alumina substrate (4)
The lead (12) of the resistance wire connect, the lead (12) of two resistance wires is each passed through alumina substrate (4), then in alumina base
The lead (12) of the resistance wire of the back face printing of piece (4) connection corresponding with the pin (13) of two resistance wires；
Then it is dense in activated electrode (21), the nitrogen oxides of the front printing nitrogen oxides concentration cell (2) of alumina substrate (4)
The non-live polarizing electrode (22) of difference battery (2), lead (27), the nitrogen oxides of the activated electrode of nitrogen oxides concentration cell (2) are dense
The lead (25) and nitrogen oxygen of the pin (28) of the activated electrode of difference battery (2), the non-live polarizing electrode of nitrogen oxides concentration cell (2)
The pin (26) of the non-live polarizing electrode of compound concentration cell (2), terminal (32), the STF oxygen for republishing the quick resistance of STF oxygen (3) are quick
The pin (35) of the lead (34) of the terminal of resistance (3) and the terminal of the quick resistance of STF oxygen (3), finally print nitrogen oxides concentration difference
The Catalytic Layer (23) of battery (2)；
Step 5: on the basis of step 4,0.5~1h is sintered under the conditions of 900~1100 DEG C, NOx sensor is made
Chip；
The printing refers at ambient temperature, using screen printing mode to adding thermal resistance (1), nitrogen oxides concentration cell
(2) slurry corresponding to each element use and in the quick resistance of STF oxygen (3) is printed；
Described adding thermal resistance (1), which is symmetrically distributed at the close periphery of alumina substrate (4), to be referred to：The electricity of adding thermal resistance (1)
Resistance silk (11) is symmetrically distributed in alumina substrate (4) positive left end at periphery, the lead of the resistance wire of adding thermal resistance (1)
(12) left-half is symmetrically distributed at the close periphery of the positive middle part left-half of alumina substrate (4), adding thermal resistance
(1) right half part of the lead (12) of resistance wire is symmetrically distributed in leaning on for the middle part right half part at alumina substrate (4) back side
At nearly periphery, the pin (13) of the resistance wire of adding thermal resistance (1) is symmetrically distributed in the right-hand member at alumina substrate (4) back side close to week
At side；
Or adding thermal resistance (1) is symmetrically distributed at the close periphery of alumina substrate (4) and referred to：Adding thermal resistance (1) is symmetrical
At the close periphery at alumina substrate (4) back side；
The flat shape of the alumina substrate (4) is the entirety that narrow two rectangles in left wide right side form, two rectangles it is symmetrical
Line is same straight line, or the flat shape of the alumina substrate (4) is a rectangle；
The resistance of the resistance wire (11) of the printing adding thermal resistance (1) is 2~20 ohm；
Described being used to each element in adding thermal resistance (1), nitrogen oxides concentration cell (2) and the quick resistance of STF oxygen (3) is corresponding
Slurry carry out printing and refer to：
Slurry is oxygen ion conductive ceramic slurry used by the dielectric substrate (24) of printing nitrogen oxides concentration cell (2), oxygen
Ionic conductivity ceramics slurry is 8% molar fraction yttria-stabilized zirconia slurry；8% molar fraction yttria-stabilized zirconia
Zirconium oxide particle diameter in slurry is less than 0.5 μm；
Slurry is platinum rhodium slurry used by the activated electrode (21) of printing nitrogen oxides concentration cell (2), platinum in platinum rhodium slurry
Content is 95wt%, and rhodium content is 5wt% in platinum rhodium slurry；In platinum rhodium slurry：The particle diameter of platinum is 0.01~0.5 μm, the grain of rhodium
Footpath is 0.01~0.5 μm；
Slurry is golden platinum slurry used by the non-live polarizing electrode (22) of printing nitrogen oxides concentration cell (2), in golden platinum slurry
Platinum content is 80wt%, and gold content is 20wt% in golden platinum slurry；In golden platinum slurry：The particle diameter of gold is 0.01~0.5 μm, platinum
Particle diameter is 0.01~0.5 μm；
Slurry is platiniferous 4.5wt% alumina slurry used by the Catalytic Layer (23) of printing nitrogen oxides concentration cell (2),
In platiniferous 4.5wt% alumina slurry：The particle diameter of platinum is 0.01~0.5 μm, and the particle diameter of aluminum oxide is less than 0.5 μm；
Lead (12), the electricity of adding thermal resistance (1) of the resistance wire (11) of printing adding thermal resistance (1), the resistance wire of adding thermal resistance (1)
Hinder the pin (13) of silk, the lead (27) of activated electrode of nitrogen oxides concentration cell (2), nitrogen oxides concentration cell (2)
Lead (25), the nitrogen oxides concentration cell of the pin (28) of activated electrode, the non-live polarizing electrode of nitrogen oxides concentration cell (2)
(2) pin (26) of non-live polarizing electrode, the terminal (32) of the quick resistance of STF oxygen (3), the quick resistance of STF oxygen (3) terminal lead
(34) slurry is platinum slurry and used by the pin (35) of the terminal of the quick resistance of STF oxygen (3), the platinum grain footpath in platinum slurry for 0.01~
0.5μm；
Slurry is 20wt% 8% molar fraction stabilized with yttrium oxide used by the transition zone (31) of the printing quick resistance of STF oxygen (3)
The STF mixed slurries of zirconium oxide and 80wt%, STF particle diameter is less than 0.5 μm in 80wt% STF slurries；
Slurry is STF slurries used by the resistive layer (33) of the printing quick resistance of STF oxygen (3), and STF particle diameter is small in STF slurries
In 0.5 μm.
2. a kind of Oxynitride sensor chip, it is characterised in that the Oxynitride sensor chip is according to claim 1
Oxynitride sensor chip prepared by the preparation method of described Oxynitride sensor chip.
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