CN207280997U - A kind of intelligence smell sensor array - Google Patents
A kind of intelligence smell sensor array Download PDFInfo
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- CN207280997U CN207280997U CN201721418689.5U CN201721418689U CN207280997U CN 207280997 U CN207280997 U CN 207280997U CN 201721418689 U CN201721418689 U CN 201721418689U CN 207280997 U CN207280997 U CN 207280997U
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- Prior art keywords
- sensor
- smell sensor
- electric insulation
- insulation layer
- chip
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- 238000009413 insulation Methods 0.000 claims abstract description 17
- 239000004020 conductor Substances 0.000 claims abstract description 8
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 claims description 3
- 239000010408 film Substances 0.000 abstract description 18
- 238000005516 engineering process Methods 0.000 abstract description 14
- 238000004519 manufacturing process Methods 0.000 abstract description 10
- 238000000034 method Methods 0.000 abstract description 9
- 230000035945 sensitivity Effects 0.000 abstract description 8
- 239000010409 thin film Substances 0.000 abstract description 4
- 230000035943 smell Effects 0.000 description 24
- 239000002245 particle Substances 0.000 description 10
- 238000010438 heat treatment Methods 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 238000001514 detection method Methods 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000000862 absorption spectrum Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000003054 catalyst Substances 0.000 description 1
- 238000006555 catalytic reaction Methods 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000002485 combustion reaction Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000000796 flavoring agent Substances 0.000 description 1
- 235000019634 flavors Nutrition 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 210000000196 olfactory nerve Anatomy 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000002304 perfume Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 235000013599 spices Nutrition 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
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- Investigating Or Analyzing Materials By The Use Of Fluid Adsorption Or Reactions (AREA)
Abstract
The utility model discloses a kind of intelligent smell sensor array, its composition includes:Chip, the chip upper surface is provided with electric insulation layer, having heaters and thermal detector are set in the electric insulation layer, the thermal detector is arranged between heater, the electric insulation layer upper surface is provided with different types of smell sensor film layer, smell sensor film layer described in different type is arranged into array, embedded different type smell sensor in the smell sensor film layer, sensor electrode is provided with the different type smell sensor, the electric insulation layer upper surface both sides are provided with several contact conductor columns.The sensor realizes that the array of multisensor in same chip, makes sensor enter micron order, manufacture sensor with nanometer technology, maximum improves surface volume ratio, makes the sensitivity of sensor have surmounting in quality with thin film technique based on microelectric technique.
Description
Technical field
Smell sensor technical field is the utility model is related to, is specially a kind of intelligent smell sensor array.
Background technology
So far, involve detection of gas, mainly there are four kinds of routine techniques:1st, metal-oxide semiconductor (MOS)(MOS)Gas
Sensor, it is all sensitive to many reducing gas, shortcoming be selectivity it is very poor, 2, catalysis burning, utilize catalyst it is combustion-supporting burn produce
Heat makes the principle that sensor resistance becomes larger, and shortcoming is only low to imflammable gas response, sensitivity.3rd, electrochemical sensor pair
Some important gas have certain selective response, and shortcoming is short life, and stability is poor.4th, optical gas sensor:Utilize part
Gas has absorption spectra in infrared light district, and using infrared light light source generator, gas sensing is made in wave filter, and infrared detector
Device, selectivity are good, and shortcoming is instrument complexity, inherently equivalent to one instrument, is involved great expense.
The common ground of these conventional gas sensors is that manufacture is complicated, substantially single assembling by hand one by one, is caused
Performance is low, and uniformity is poor, can not realize the production of high-volume scale.
What current dosage was maximum is the sensor of semiconductor MOS structure in the world, and sensor need to work in more than 200 DEG C of temperature
Degree, manufacture method is high-temp combustion, is known as the first generation, and the second generation bites technology using tiffany and sensor and heater are all printed
On a ceramic substrate, it is known as second generation product.The sensitivity of this kind of gas sensor depends on sensing particle area and volume ratio,
Particle is smaller, and area is bigger with volume ratio, and sensitivity is higher.It is exactly to depend on sensor granular size and porosity.The first generation
Burning type, sensing body is very big, and particle is very big, surface to volume ratio very little, and the particle of second generation thick film is smaller, surface and body
Product ratio is still very low, causes this two generations product sensitivity all very low.Highly sensitive condition is obtained, is exactly that sensor particle needs
Reach minimum, reach nanoscale.Sensor body need to make film, otherwise can not accomplish the sensor that particle is nanometer.In addition,
At present all gas sensor only comprising sensor in itself and heater, without thermal detector, without temp sensing function, can not do precisely
Temperature control, causes gas sensor accuracy of detection very low.
The non-film of gas sensor configuration at present, is unable to reach high sensitivity, high consistent, and the batch life of high stability
Production, this is the background situation of world single gas sensor so far.
Olfactory sensing requires the array that need to have a variety of smell sensors at least, can not detect perfume (or spice) also in the world at present
Smelly sensor, also occurs without a variety of odor types in the sensor array on a chip, that is, can not realize similar
People's nasil feels the solution route of electrical property conversion and detection.
The content of the invention
The purpose of this utility model is to provide a kind of intelligent smell sensor array, to solve above-mentioned background technology
The problem of middle proposition.
To achieve the above object, the utility model provides following technical solution:A kind of intelligence smell sensor array,
Its composition includes:Chip, the chip upper surface are provided with electric insulation layer, set in the electric insulation layer having heaters and
Thermal detector, the thermal detector are arranged between heater, and the electric insulation layer upper surface is provided with different types of smell
Sensor film layer, the smell sensor film layer described in different type is arranged into array, embedded in the smell sensor film layer
Different type smell sensor, is provided with sensor electrode, the electric insulation layer on the different type smell sensor
Upper surface both sides are provided with several contact conductor columns.
Preferably, the intelligent smell sensor array, several contact conductor columns are used to support chip
It is simultaneous to fill conductive lead wire.
Compared with prior art, the beneficial effects of the utility model are:The sensor uses microelectronic chip technology, makes biography
The manufacture of sensor enters micron order, manufactures polytype smell sensors array on the same chip, changes conventional gas sensing
The history of device single-sensor manufacture, realizes olfactory nerves sense element array needed for mankind's odor sensing, a chip can integrate
The array chip of up to ten kinds diverse fragrant flavour types;Using microelectric technique, the manufacture of gas and smell sensor is set to use silicon
Integrated circuit planar technology, in this way, gas sensor is main, the semi-conductor gas device of maximum production(MOS)Sensing membrane system
Make, heating unit and thermal detector, can in one plane complete, and overcome conventional gas sensors without thermal detector, Wu Fashi
The shortcomings that existing accurate temperature control;Using the MEMS technology in modern age:Since semiconductor gas sensor necessarily operates in higher temperatures
Degree, each sensor need to heat, and the heating system of chip, is electrically isolated from each other, and blocks the heat losses of sensor, with minimum work(
Rate makes a part of the sensor long-term stable operation as core technology;Filming technology:Sensor, heater and thermal detector
Made on the same chip of IC technologies(On chip), using glossy surface, IC technologies realize colorimetric sensor films, thin film technique
Make sensor, heater, thermal detector layering is electrically isolated;Sensor particle reaches nanometer level, substantially increases the spirit of sensor
Sensitivity;It is timely with reference to MEMS using high temperature resistant host material, the active area of sensor is reached very thin, heat is blocked using hanging
It is lost in, the heating power of each sensor is made the reliability of sensor array chip less than 0.1, stability greatly improves.
Brief description of the drawings
Fig. 1 is the utility model structure diagram.
Fig. 2 is the utility model top view.
Fig. 3 is the utility model side view.
In figure:1st, chip, 2, heater, 3, electric insulation layer, 4, sensor electrode, 5, smell sensor film layer, 6, thermometric
Device, 7, smell sensor, 8, contact conductor column.
Embodiment
The following is a combination of the drawings in the embodiments of the present utility model, and the technical scheme in the embodiment of the utility model is carried out
Clearly and completely describe, it is clear that the described embodiments are only a part of the embodiments of the utility model, rather than whole
Embodiment.Based on the embodiment in the utility model, those of ordinary skill in the art are without making creative work
All other embodiments obtained, shall fall within the protection scope of the present invention.
Referring to Fig. 1, the utility model provides a kind of technical solution:A kind of intelligence smell sensor array, its group
Into including:Chip 1,1 upper surface of chip are provided with electric insulation layer 3, having heaters 2 are set in the electric insulation layer 3
With thermal detector 6, the thermal detector 6 is arranged between heater 2, and 3 upper surface of electric insulation layer is provided with different type
Smell sensor film layer 5, smell sensor film layer 5 described in different type arranges into array, the smell sensor film
5 inner embedded different type smell sensor 7 of layer, are provided with sensor electrode 4, institute on the different type smell sensor 7
The 3 upper surface both sides of electric insulation layer stated are provided with several contact conductor columns 8, and several contact conductor columns 8 are used to support core
Piece 1 is simultaneous to fill conductive lead wire.
Operation principle:Using microelectric technique, on the same chip(on chip), manufacture a variety of different type smells and pass
Sensor film, makes it form array.
On the same chip, heater and thermal detector are manufactured.
Smell sensor film is manufactured by thin film technique, and thin film technique can make the thickness of sensor film less than 2000 sounds of sighing.
Using nanometer technology by the particle nanosizing of sensor film, sensor particle is reached nanoscale, limit to greatest extent
Degree improves the area and volume ratio of sensor particle, and pole significantly improves transducer sensitivity.
Using MEMS technology, the thickness in working sensor area is set to be less than 200 microns.
Make chip hanging using MEMS technology, chip surface heat transfer is reached minimum, ensure the heating power in milliwatt
Under, sensor can be with steady operation in more than 250 DEG C of temperature.
While there has been shown and described that the embodiment of the utility model, for the ordinary skill in the art,
It is appreciated that these embodiments can be carried out with a variety of changes in the case where not departing from the principle of the utility model and spirit, repaiied
Change, replace and modification, the scope of the utility model are defined by the appended claims and the equivalents thereof.
Claims (2)
1. a kind of intelligence smell sensor array, its composition include:Chip(1), it is characterized in that:The chip(1)On
Surface is provided with electric insulation layer(3), the electric insulation layer(3)Interior setting having heaters(2)And thermal detector(6), the survey
Warm device(6)It is arranged on heater(2)Between, the electric insulation layer(3)Upper surface is provided with different types of smell sensor
Film layer(5), the smell sensor film layer described in different type(5)Arranged into array, the smell sensor film layer(5)In it is embedding
Enter different type smell sensor(7), the different type smell sensor(7)On be provided with sensor electrode(4), it is described
Electric insulation layer(3)Upper surface both sides are provided with several contact conductor columns(8).
2. intelligence smell sensor array according to claim 1, it is characterized in that:Several contact conductor columns
(8)It is used to support chip(1)It is simultaneous to fill conductive lead wire.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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CN201721418689.5U CN207280997U (en) | 2017-10-30 | 2017-10-30 | A kind of intelligence smell sensor array |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
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CN201721418689.5U CN207280997U (en) | 2017-10-30 | 2017-10-30 | A kind of intelligence smell sensor array |
Publications (1)
Publication Number | Publication Date |
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CN207280997U true CN207280997U (en) | 2018-04-27 |
Family
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CN201721418689.5U Expired - Fee Related CN207280997U (en) | 2017-10-30 | 2017-10-30 | A kind of intelligence smell sensor array |
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CN (1) | CN207280997U (en) |
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2017
- 2017-10-30 CN CN201721418689.5U patent/CN207280997U/en not_active Expired - Fee Related
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GR01 | Patent grant | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20180427 |
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CF01 | Termination of patent right due to non-payment of annual fee |