CN205139071U - Resistance -type gas sensor with two support six layer structures of hanging oneself from a beam - Google Patents
Resistance -type gas sensor with two support six layer structures of hanging oneself from a beam Download PDFInfo
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- CN205139071U CN205139071U CN201520757454.3U CN201520757454U CN205139071U CN 205139071 U CN205139071 U CN 205139071U CN 201520757454 U CN201520757454 U CN 201520757454U CN 205139071 U CN205139071 U CN 205139071U
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- 239000012528 membrane Substances 0.000 claims abstract description 34
- 238000010438 heat treatment Methods 0.000 claims abstract description 32
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 18
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 18
- 239000010703 silicon Substances 0.000 claims abstract description 18
- 239000000758 substrate Substances 0.000 claims abstract description 17
- 238000001514 detection method Methods 0.000 claims description 12
- 230000007704 transition Effects 0.000 claims description 11
- 238000009413 insulation Methods 0.000 claims description 9
- 238000000926 separation method Methods 0.000 claims description 8
- 230000035945 sensitivity Effects 0.000 abstract description 15
- 238000002955 isolation Methods 0.000 abstract description 3
- 239000000463 material Substances 0.000 description 8
- 230000006872 improvement Effects 0.000 description 6
- 239000013078 crystal Substances 0.000 description 5
- 238000000034 method Methods 0.000 description 5
- 239000007787 solid Substances 0.000 description 5
- 230000008859 change Effects 0.000 description 4
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 230000000274 adsorptive effect Effects 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 238000007084 catalytic combustion reaction Methods 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000000224 chemical solution deposition Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 239000002360 explosive Substances 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 238000006557 surface reaction Methods 0.000 description 1
- 230000035922 thirst Effects 0.000 description 1
- 231100000331 toxic Toxicity 0.000 description 1
- 230000002588 toxic effect Effects 0.000 description 1
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Abstract
The utility model discloses a resistance -type gas sensor with two support six layer structures of hanging oneself from a beam, it has two supports hangs oneself from a beam, and its six layer structure is from bottom to top in proper order: silicon substrate frame, heating rete, zone of heating, isolation layer, electrode layer, sensitive rete, this sensitivity rete include sensitive membrane more than two -layer, and the sensitive membrane of each layer from bottom to top, and its specific surface reduces gradually, the hole size is crescent. Compared with the prior art, it has two and supports the structure of hanging oneself from a beam easily improves the sensor through regulation and control operating temperature performance, and it adopts more than two -layer sensitive membrane as sensitive rete, can improve gas sensor's sensitivity and selectivity.
Description
Technical field
The utility model relates to gas sensor domain, particularly relates to a kind ofly to have two supports and to hang oneself from a beam the resistance-type gas sensor of six Rotating fields.
Background technology
Gas sensor has achieved and has applied widely in the large major domain of industrial, civilian and environmental monitoring three.The ways and means of current detection gas is very many, mainly comprises catalytic combustion type, electric chemical formula, heat-conducted, infrared absorption type and semiconductor-type gas sensor etc.Semiconductor-type gas sensor comprises Gas Sensors of Electric Resistance Semiconductors and non-resistor semiconductor gas sensor, and resistance-type gas sensor utilizes change in resistance to detect gas concentration.Due to resistive memory sensor have highly sensitive, easy to operate, volume is little, with low cost, response time and the advantage such as release time is short, therefore be most widely used, especially to flammable explosive gas (as CH4, H2 etc.) and toxic and harmful (as CO, NOx etc.) detection in play an important role.
Semiconductor gas sensor uses metal oxide as gas sensitive usually, by causing the change of self-resistance at its adsorption gas and surface reaction, thus monitors object gas.The larger sensitivity of specific surface area of gas sensitive is higher, easier adsorbed target gas.The existing method preparing gas sensitive is a lot, such as chemical vapour deposition technique, chemical bath deposition etc., and its obtained gas sensitive specific surface area is large, and chemical activity is high, can monitor the object gas that concentration is lower.But, due to prepare gas sensitive process in introduce gaseous impurities, gas sensitive can existing defects, and these defects can cause sensor to reduce in Long-Time Service process medium sensitivity and selectivity.
At present, how improving sensitivity and the selectivity of sensor, is the technical barrier that those skilled in the art thirst for solving.
Utility model content
The purpose of this utility model is to overcome the deficiencies in the prior art, and provide a kind of resistance-type gas sensor with two overarm six Rotating fields, it has higher sensitivity and selectivity.
The utility model is achieved through the following technical solutions: a kind of have two supports and to hang oneself from a beam the resistance-type gas sensor of six Rotating fields, and six Rotating fields of described resistance-type gas sensor are followed successively by from bottom to top:
Silicon substrate framework, its indent forms heat-insulation chamber body, silicon substrate framework is distributed with transmitting electrode, exploring electrode;
Heating rete, it comprises heating film region, zone of transition and support overarm, and heating rete is suspended in the top of heat insulation cavity, and the two ends of heating film region are connected with zone of transition respectively, the one end hung oneself from a beam with support respectively in the two ends of zone of transition is connected, and the other end supporting overarm is connected with silicon substrate framework;
Zone of heating, it comprises resistive heater and for electrical lead, resistive heater is arranged on heating film region with broken line form, and power supply lead-in wire is arranged in and supports in overarm;
Separation layer, it wraps up described zone of heating, plays electrical isolation, effectively prevents mutual interference;
Electrode layer, it comprises interdigital electrode and detection leads, and interdigital electrode is positioned on separation layer;
Responsive rete, it covers on described electrode layer, and is electrically connected with described interdigital electrode;
Responsive rete comprises two-layer above sensitive membrane, and each layer sensitive membrane is successively electrically connected, and from bottom to top, its specific surface area reduces described each layer sensitive membrane gradually, pore-size increases gradually.
As further improvement of these options, this hole is spherical structure, and the internal diameter of innermost layer hole is greater than 10 nanometers, and the internal diameter of outermost layer hole is less than 10 microns.
Under normal circumstances, the specific surface area of responsive rete is larger, and sensitivity is higher, therefore can be regulated and controled the sensitivity of gas sensor by the pore size and density changing sensitive membrane.The sensitive membrane that specific surface area is large covers the less film of specific surface area, may be used for the selectivity improving sensor, by changing its materials and structures, the adsorptive power of gas with various molecule on its surface can be changed, the molecule that adsorptive power is higher, detection sensitivity is higher; The molecule that adsorptive power is lower, detection sensitivity is lower, thus realizes improving optionally object.
As further improvement of these options, the shape of heat insulation cavity is xsect is inverted trapezoidal structure, V-shape structure or arc-shaped structure.
As further improvement of these options, the resistive heater of zone of heating is by being connected with the transmitting electrode on silicon substrate framework for electrical lead.
As further improvement of these options, the interdigital electrode of electrode layer is connected with the exploring electrode on silicon substrate framework by detection leads.
As further improvement of these options, the shape of heating film region is rectangular configuration, and the shape of zone of transition is isosceles trapezoidal structure, and the bottom of isosceles trapezoid is connected with the minor face of rectangle heating film region, hangs oneself from a beam with support and be connected in the upper base of isosceles trapezoid.
Adopt the structure of two support overarms to provide the high temperature needed for work for sensor, be beneficial to the homogeneity improving temperature, improve the performance of sensor easily through regulation and control working temperature, and this structure physical strength be at high temperature higher; Interdigital electrode is positioned at corresponding section, heating film region, and for connecting sensitive membrane, when object gas contacts with gas sensitive, the resistance of gas sensitive can change, and just can realize detection of gas by the resistance variations measured between exploring electrode.When adopting two-layer above sensitive membrane to detect gas as responsive rete, because the specific surface area of each layer sensitive membrane increases from bottom to top gradually, its susceptibility also increases gradually; Outermost sensitive membrane can have different materials and structures, and it directly contacts with gas, can improve the selectivity of gas sensor to gas, and then improves relative sensitivity.
The utility model has the following advantages compared to existing technology: a kind of resistance-type gas sensor with two overarm six Rotating fields that the utility model provides, its have two supports overarm structure easily through regulation and control working temperature to improve the performance of sensor; And it adopts the two-layer above sensitive membrane of different specific surface area and different structure, the sensitive membrane that specific surface area is comparatively large, pore-size is less is at bottom, the responsive rete that specific surface area is less, pore-size is larger, on upper strata, improves sensitivity and the selectivity of gas sensor.
Accompanying drawing explanation
Fig. 1 is the structural representation with the resistance-type gas sensor of two overarm six Rotating fields of the present utility model;
Fig. 2 is the second to the layer 6 structural representation of gas sensor of the present utility model;
Fig. 3 is the decomposing schematic representation with the layer 6 structure of two-layer air-sensitive film of gas sensor;
Fig. 4 is the decomposing schematic representation with the layer 6 structure of three layers of air-sensitive film of gas sensor;
Fig. 5 is the vertical view with the resistance-type gas sensor of two overarm six Rotating fields of the present utility model;
Fig. 6 is the side view with the resistance-type gas sensor of two overarm six Rotating fields of the present utility model;
Fig. 7 is that of the present utility model another has the vertical view of the resistance-type gas sensor of two overarm six Rotating fields;
Fig. 8 is that of the present utility model another has the side view of the resistance-type gas sensor of two overarm six Rotating fields.
Embodiment
Below embodiment of the present utility model is elaborated; the present embodiment is implemented under premised on technical solutions of the utility model; give detailed embodiment and concrete operating process, but protection domain of the present utility model is not limited to following embodiment.
According to shown in Fig. 1 to Fig. 2, a kind of resistance-type gas sensor with two overarm six Rotating fields, described six Rotating fields are followed successively by from bottom to top: 1. silicon substrate framework 1, its indent forms heat-insulation chamber body 12, silicon substrate framework 1 is distributed with transmitting electrode 13 and exploring electrode 14, adopt the silicon chip in (100) face as silicon substrate framework 1, the shape of the heat insulation cavity 12 made for xsect be inverted trapezoidal structure, V-shape structure or arc-shaped structure (as shown in Fig. 5 to Fig. 8); 2. rete 2 is heated, it comprises heating film region 21, zone of transition 22 and supports overarm 23, heating rete 2 is suspended in above heat insulation cavity 12, the minor face of rectangle heating film region 21 is connected with the bottom of isosceles trapezoid zone of transition 22 respectively, the two ends of zone of transition 22 are connected with the one end supporting overarm 23 respectively, the other end supporting overarm 23 is connected with silicon substrate framework 1, and the upper base of isosceles trapezoid is connected with support overarm 23, and heating rete 2 is made up of the multilayer complex films of monox and silicon nitride; 3. zone of heating 3, it comprises resistive heater 31 and supplies electrical lead 32, resistive heater 31 is arranged on heating film region 21 with broken line form, being arranged in for electrical lead 32 supports in overarm 23, and the resistive heater 31 of zone of heating is by being connected with the transmitting electrode 13 on silicon substrate framework for electrical lead 32, and the material of zone of heating 3 and transmitting electrode 13 is metal material (as platinum and/or gold) or semiconductor material (polysilicon); 4. separation layer 4, it wraps up resistive heater 31 and for electrical lead 32, separation layer 4 is made up of monox and silicon nitride, plays electrical isolation effect, effectively prevents mutual interference; 5. electrode layer 5, it comprises interdigital electrode 51 and detection leads 52, interdigital electrode 51 is positioned on separation layer 4, and the interdigital electrode 51 on separation layer is connected with the exploring electrode 14 on silicon substrate framework by detection leads 52, and the material of electrode layer 5 and exploring electrode 14 is metal material (as platinum, gold or copper); 6. responsive rete 6, it covers on electrode layer 5, and is electrically connected with interdigital electrode 51; Responsive rete 6 comprises two-layer above sensitive membrane, and each layer sensitive membrane is successively electrically connected, and each layer sensitive membrane from bottom to top, its specific surface area reduces gradually, pore-size increases gradually, hole is spherical structure, and the internal diameter of innermost layer hole is greater than 10 nanometers, and the internal diameter of outermost layer hole is less than 10 microns.
Adopt the structure of two support overarms to provide the high temperature needed for work for sensor, be beneficial to the homogeneity improving temperature, improve the performance of sensor easily through regulation and control working temperature, and this structure physical strength be at high temperature higher; Interdigital electrode is positioned at corresponding section, heating film region, and for connecting sensitive membrane, when object gas contacts with gas sensitive, the resistance of gas sensitive can change, and just can realize detection of gas by the resistance variations measured between exploring electrode.When adopting two-layer above sensitive membrane to detect gas as responsive rete, because the specific surface area of each layer sensitive membrane increases from bottom to top gradually, its susceptibility also increases gradually; Outermost sensitive membrane can have different materials and structures, and it directly contacts with gas, can improve the selectivity of gas sensor to gas, and then improves relative sensitivity.
Embodiment 1
As shown in Figures 2 and 3, the above-mentioned resistance-type gas sensor with two overarm six Rotating fields, wherein responsive rete comprises two-layer sensitive membrane, bottom sensitive membrane 611 thickness is 50 nanometers, crystal structure is six side's solid matters, and the internal diameter of hole is 50 nanometers, and its specific surface area is larger; Upper strata sensitive membrane 612 thickness is 500 nanometers, and crystal structure is six side's solid matters, and the internal diameter of hole is 50 nanometers, and its specific surface area is less; Obtained responsive rete is the gas sensor of two-layer sensitive membrane.This type of structure sensor, compared with the traditional ceramics tubular type sensor of same material, sensitivity can improve 2-3 the order of magnitude.
Embodiment 2
As shown in Figure 2 and Figure 4, the above-mentioned resistance-type gas sensor with two overarm six Rotating fields, wherein responsive rete comprises three layers of sensitive membrane, bottom sensitive membrane 621 thickness is 50 nanometers, crystal structure is six side's solid matters, and the internal diameter of hole is 50 nanometers, and its specific surface area is larger; Middle level sensitive membrane 622 thickness is 500 nanometers, and crystal structure is six side's solid matters, and the internal diameter of hole is 500 nanometers, and its specific surface area is less; On layer by layer sensitive membrane 623 thickness be 1000 nanometers, crystal structure is six side's solid matters, and the internal diameter of hole is 1000 nanometers, and its specific surface area is more minimum; Obtained responsive rete is the gas sensor of three layers of sensitive membrane.Sensors with auxiliary electrode is the same with the sensor in embodiment 1, has good sensitivity equally, and upper strata sensitive membrane 623 is by selecting certain material, can improve the selectivity to reducibility gas.
The foregoing is only preferred embodiment of the present utility model; not in order to limit the utility model; all do within spirit of the present utility model and principle any amendment, equivalent to replace and improvement etc., all should be included within protection domain of the present utility model.
Claims (6)
1. have two supports to hang oneself from a beam the resistance-type gas sensors of six Rotating fields, six Rotating fields of described resistance-type gas sensor are followed successively by from bottom to top:
Silicon substrate framework, its indent forms heat-insulation chamber body, and described silicon substrate framework is distributed with transmitting electrode, exploring electrode;
Heating rete, it comprises heating film region, zone of transition and support overarm, described heating rete is suspended in the top of described heat insulation cavity, the two ends of described heating film region are connected with zone of transition respectively, the one end hung oneself from a beam with support respectively in the two ends of described zone of transition is connected, and the described other end supporting overarm is connected with silicon substrate framework;
Zone of heating, it comprises resistive heater and for electrical lead, described resistive heater is arranged on described heating film region with broken line form, and described power supply lead-in wire is arranged in described support overarm;
Separation layer, it wraps up described zone of heating;
Electrode layer, it comprises interdigital electrode and detection leads, and described interdigital electrode is positioned on described separation layer;
Responsive rete, it covers on described electrode layer, and is electrically connected with described interdigital electrode;
It is characterized in that, described responsive rete comprises two-layer above sensitive membrane, and each layer sensitive membrane is successively electrically connected, and from bottom to top, its specific surface area reduces described each layer sensitive membrane gradually, pore-size increases gradually.
2. sensor according to claim 1, is characterized in that, described hole is spherical structure, and the internal diameter of innermost layer hole is greater than 10 nanometers, and the internal diameter of outermost layer hole is less than 10 microns.
3. sensor according to claim 1, is characterized in that, the shape of described heat insulation cavity is xsect is inverted trapezoidal structure, V-shape structure or arc-shaped structure.
4. sensor according to claim 1, is characterized in that, the resistive heater of described zone of heating is connected with the described transmitting electrode on silicon substrate framework for electrical lead by described.
5. sensor according to claim 1, is characterized in that, the interdigital electrode of described electrode layer is connected with the exploring electrode on described silicon substrate framework by described detection leads.
6. sensor according to claim 1, it is characterized in that, the shape of described heating film region is rectangle, and the shape of described zone of transition is isosceles trapezoid, and the bottom of described isosceles trapezoid is connected with the minor face of rectangle heating film region, hang oneself from a beam with support and be connected in the upper base of described isosceles trapezoid.
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105758899A (en) * | 2016-04-08 | 2016-07-13 | 昆明贵研金峰科技有限公司 | Multi-layer laminated type gas sensitive sensor structure and manufacture method thereof |
| CN109959682A (en) * | 2017-12-26 | 2019-07-02 | 意法半导体有限公司 | Adaptive testing method and design for low-power MOX sensor |
| EP3531119A1 (en) * | 2018-02-26 | 2019-08-28 | Sensirion AG | Sensor with bridge structure |
-
2015
- 2015-09-28 CN CN201520757454.3U patent/CN205139071U/en active Active
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105758899A (en) * | 2016-04-08 | 2016-07-13 | 昆明贵研金峰科技有限公司 | Multi-layer laminated type gas sensitive sensor structure and manufacture method thereof |
| CN105758899B (en) * | 2016-04-08 | 2019-03-26 | 昆明贵研金峰科技有限公司 | A kind of laminated type gas-sensitive sensor structure and its manufacturing method |
| CN109959682A (en) * | 2017-12-26 | 2019-07-02 | 意法半导体有限公司 | Adaptive testing method and design for low-power MOX sensor |
| US11009474B2 (en) | 2017-12-26 | 2021-05-18 | Stmicroelectronics Pte Ltd | Adaptive test method and designs for low power mox sensor |
| CN109959682B (en) * | 2017-12-26 | 2022-12-09 | 意法半导体有限公司 | Adaptive test method and design for low power MOX sensor |
| US11808723B2 (en) | 2017-12-26 | 2023-11-07 | Stmicroelectronics Pte Ltd | Adaptive test method and designs for low power mox sensor |
| EP3531119A1 (en) * | 2018-02-26 | 2019-08-28 | Sensirion AG | Sensor with bridge structure |
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Effective date of registration: 20190320 Address after: 230088 F3 Building 1609, Phase II Innovation Industrial Park, Hefei High-tech Zone, Anhui Province Patentee after: Hefei Micro and Nano Sensor Technology Co., Ltd. Address before: No. 390 Anhua Road, Changning District, Shanghai 200050 Patentee before: Xu Lei |