^237!12 五、發明說明⑴ 【發明所屬之技術領域』 導體於-種氣體感測器，特別係關於氧化物半 【先前技術】 傷，：Ϊ2於檢測某種特定氣體存在之感測設 J物半導體氣體感；哭：及;:醇等氣體。其中，氧 *料載流=度；：=::料顆粒表面之吸附可導致 率。當感測材料較為萨；=⑯而改變該材料之電導 時，蔣古^科1為疏鬆，材料微粒之間存在一定空隙 為影燮此，t :虱體之吸附。因此，感測膜之疏鬆性成 〜。㈢此力員乳體感測器之響應速度及靈敏度之重要因素之 結而Ϊ :氣/體感測器-般由粉末狀氧化物半導體材料經燒 台：=如，1992年4月11日公告之編號為182029之 義髀Γ i提供—種氣體感測器及其製造方法。其中，該 再姑感測益通過將一有機金屬溶液旋轉成膜於緩衝層上， 製、0 〇 c燒結，製成金屬氧化♦物之感測膜。惟，在燒結 ί ^中1通常會因燒結溫度較高，導致材料微粒之間的空 袖Γ ^消失，使製得的感測膜之疏鬆性降低，從而不利於 ’則氣體吸附’降低氣體感測器之靈敏度。 有鑑於此’提供一種具有良好疏鬆性之感測膜之氣體 成測器實為必要。 【發明内容】^ 237! 12 V. Description of the invention ⑴ [Technical field to which the invention belongs] A conductor-type gas sensor, especially about an oxide half [prior art] Injury: Ϊ2 is a sensing device for detecting the presence of a specific gas J object semiconductor gas sense; cry: and ;: alcohol and other gases. Among them, oxygen * material carrier current = degree;: = :: adsorption on the surface of the material particles can lead to the rate. When the sensing material is relatively sagittal; = ⑯ and the conductivity of the material is changed, Jiang Gu ^ 1 is loose, and there is a certain gap between the material particles to affect this, t: adsorption of lice. Therefore, the porosity of the sensing film becomes ~. ㈢Combined with the important factors of the response speed and sensitivity of the milk sensor:: Gas / body sensor-generally made of powdered oxide semiconductor material through the burner: = eg, April 11, 1992 The announcement No. 182029 provides a gas sensor and a manufacturing method thereof. Among them, the re-sensing sensing is performed by rotating an organometallic solution into a film on the buffer layer, and then sintering at 0 ° C to form a sensing film of metal oxide. However, in the sintering process, the high sintering temperature usually causes the empty sleeve Γ ^ between the material particles to disappear, which reduces the porosity of the produced sensing film, which is not conducive to reducing the gas by 'then gas adsorption'. The sensitivity of the sensor. In view of this, it is necessary to provide a gas-generating detector having a sensing film with good porosity. [Summary of the Invention]
第6頁 1237112 五、發明說明（2) 為解決先前技術之經高溫製程後感測 而影響感測器靈敏度之問題，本發明之目的 具有良好疏鬆性之感測膜之氣體感測器 之間的空隙結構。 免口 結塊而減少微粒 為貫現本發明之目的，太获接 絲γ冰 其包括…邑缘某底.來土明铨供一種氣體感測器， 、、ε·緣基底，形成於絕緣基底上之一 =絕緣基底之感測膜包括感測微粒，並至少覆： 於兩電極之表面；其中，至少一 芷至乂覆盍 置之容納結構，其分別容納有感測微粒：成有若干分隔設 戌：實=發明…’本發明進一步提供Page 6 1237112 V. Description of the invention (2) In order to solve the problem that the sensitivity of the sensor is affected by the sensing after the high temperature process of the prior art, the object of the present invention is a gas film with a good looseness between the gas sensors Void structure. To reduce the size of particles without mouth clumping. In order to achieve the purpose of the present invention, the wire γ ice is obtained too. It includes a base of yiyuan. Lai Tuming provides a gas sensor. The base is formed on the insulation. One of the substrates = the sensing film of the insulating substrate includes sensing particles, and at least covers: on the surfaces of the two electrodes; wherein, at least one of the receiving structures including the receiving structures, respectively, contains the sensing particles: Chengyou Several separate devices: Real = Invention ... 'The present invention further provides
包括：-絕緣基底；形成于絕 ：J =覆：： = ;ίί之感測膜，，包括感測“； 容納結構，至少—電極層覆緣：：： =内_，至少部分感測微粒容納於該分隔設置:二 工，:二=發明對絕緣基底或電極進行加 測膜之接觸部相應形成若干容；：=，：由此在電極與感 粒。利用絕緣基底或電極之二用:巧容感測微 微粒之分散度，使烕測微位之Μ 供之刀隔，增加感測 古間的空隙得以保留，確保經 程後感測膜仍具備較高之疏鬆性，並能 = 體之流通率’進-步增加氣體感測器之靈敏度。 乳 1237112 五、發明說明（3) 【貫施方式】 下面將結合附圖對本發明作進一步之詳細說明。 請一併參閱第一圖及第二圖，本發明第一實施例之氣 體感測為3 ’其包括· 一絕緣基底3 1，形成於絕緣基底3 1 表面之兩電極33、35 ; —形成於絕緣基底31及兩電極33、 35表面之感測膜37，其包括感測微粒372。其中，電極 33、35上形成有若干分隔設置之容納結構332、352，其分 別容納有感測微粒3 7 2。 絕緣基底3 1可為一薄板或膜層。其通常由絕緣性能好 的材料製成，如石英、陶瓷或氮化矽等。另，氣體感測器 3 —般需要加熱到一定溫度才能進行良好檢測，故，絕緣 基底3 1之材料又以同時具備良好的熱導性為佳。 電極33、35形成於絕緣基底31表面。電極33、35可由 $ ( Pt )、金（Au)或其合金等材料通過沈積法或濺鍍法按預 疋圖案形成於絕緣基底31表面，所形成之電極膜層以厚膜 為佳’其厚度可為400〜7000奈米。另，電極3 3、35還可配 置電極導線，電極之數量、圖案及厚度還可根據實際需要 加以改變。 . 電極33、35包括若干分隔設置之容納結構332、352， 其I為，孔、凹槽或溝道等結構。該容納結構332、352用 於提供容納部分感測微粒372之容納空間，且相鄰容納空 間之間由電極提供之阻隔（未標示）相隔開。容納結構 3 32 352可通過蝕刻或光刻等方法形成於電極33、35。但 …心 疋’該容納結構的數量形狀不以本實施例所示者Including:-Insulating substrate; formed in the insulation: J = covering: =; ίί the sensing film, including sensing "; containing structure, at least-electrode layer covering edge :: = inside_, at least part of the sensing particles Contained in this separation setting: two workers, two: inventions to add a corresponding volume to the contact portion of the insulating substrate or electrode to add a measuring film;: = ,: from this to the electrode and the sensor. Use the insulating substrate or two : The dispersion of the sensing microparticles is neatly arranged, so that the distance between the micrometer and the micrometer can be increased, and the gap between the ancient sensing space can be maintained to ensure that the sensing film still has high porosity after the process, and can = The flow rate of the body 'further increases the sensitivity of the gas sensor. Milk 1237112 V. Description of the invention (3) [Performance mode] The invention will be described in further detail below with reference to the drawings. Please refer to the first figure together And the second figure, the gas sensing of the first embodiment of the present invention is 3 ′, which includes: an insulating substrate 31, two electrodes 33, 35 formed on the surface of the insulating substrate 3 1;-formed on the insulating substrate 31 and two electrodes 33, 35 surface sensing film 37 including sensing particles 372. Among them, the electrodes 33 and 35 are formed with a plurality of separate receiving structures 332 and 352, which respectively contain sensing particles 3 7 2. The insulating substrate 31 can be a thin plate or a film layer. It usually has good insulating properties. Made of materials such as quartz, ceramics or silicon nitride, etc. In addition, the gas sensor 3 generally needs to be heated to a certain temperature for good detection, so the material of the insulating substrate 3 1 also has good thermal conductivity. The electrodes 33 and 35 are formed on the surface of the insulating substrate 31. The electrodes 33 and 35 can be formed on the insulating substrate 31 in a pre-patterned pattern by a deposition method or a sputtering method using materials such as $ (Pt), gold (Au), or an alloy thereof. On the surface, the formed electrode film layer is preferably a thick film. Its thickness can be 400 to 7000 nanometers. In addition, electrodes 3, 35 can also be equipped with electrode leads, and the number, pattern, and thickness of the electrodes can be added according to actual needs. Changes ... The electrodes 33, 35 include a plurality of spaced apart receiving structures 332, 352, which are structures such as holes, grooves, or channels. The receiving structures 332, 352 are used to provide an accommodating space for accommodating part of the sensing particles 372. , And adjacent to They are separated by barriers (not labeled) provided by the electrodes. The accommodating structure 3 32 352 can be formed on the electrodes 33, 35 by etching or photolithography. But ... the number and shape of the accommodating structure is not based on this implementation. Example
12371121237112
五、發明說明（4) 為限。 在本實施方式中，容納結構3 3 2、3 5 2為微孔結構，其 孔徑R約為感測微粒3 7 2之粒控2〜3倍，其深度Η1約為孔徑r 之1 〇倍。感測微粒3 7 2較均勻地分佈於各容納結構3 3 2、 3 5 2之内。若干相鄰感測微粒3 7 2之間形成一定的空隙，用 以提供被檢測氣體之吸附容納空間，增大氣體與感測微粒 3 7 2接觸之表面積。而從整體看，感測微粒3 了 2亦同時分散 收容於若干容納結構332、352之中，使其分散度增大，確 保感測微粒3 7 2之間的空隙。5. Description of the invention (4) is limited. In this embodiment, the accommodating structure 3 3 2, 3 5 2 is a microporous structure, and its pore diameter R is about 2 to 3 times that of the sensing particles 3 7 2 and its depth Η1 is about 10 times the pore diameter r. . The sensing particles 3 7 2 are evenly distributed within each of the containing structures 3 3 2 and 3 5 2. A certain gap is formed between a plurality of adjacent sensing particles 3 7 2 to provide a space for absorbing and accommodating the detected gas, and to increase the surface area of the gas in contact with the sensing particles 3 7 2. As a whole, the sensing particles 3 and 2 are simultaneously dispersed and housed in a plurality of receiving structures 332 and 352, which increases the dispersion degree and ensures the space between the sensing particles 3 7 2.
感測膜37主要由感測微粒372構成，其材料一般為氧 化物半導體材料，如氧化錫、氧化鎢及氧化鋅等。感測微 粒3 7 2之粒徑因其加工工藝不同而不同，其較佳範圍大致 為5-100奈米。感測膜37可通過溶膠—凝膠法、濺鍍法或沈 積法形成於絕緣基底31表面，並覆蓋於電極33、35。故， 感測微粒372於電極33、35之容納結構332、352之内亦有 分佈。 當然，感測膜37之材料、厚度及構造還可根據實際需 要加以改變，感測膜37亦可部分覆蓋電極33、35，感測微The sensing film 37 is mainly composed of sensing particles 372, and its material is generally an oxide semiconductor material such as tin oxide, tungsten oxide, zinc oxide, and the like. The particle size of the sensing microparticles 3 7 2 differs depending on the processing technology, and its preferred range is approximately 5-100 nanometers. The sensing film 37 can be formed on the surface of the insulating substrate 31 by a sol-gel method, a sputtering method, or a deposition method, and covers the electrodes 33, 35. Therefore, the sensing particles 372 are also distributed within the receiving structures 332 and 352 of the electrodes 33 and 35. Of course, the material, thickness, and structure of the sensing film 37 can also be changed according to actual needs. The sensing film 37 can also partially cover the electrodes 33 and 35,
粒372亦可僅分佈於部分容納結構3 32、352内或各容納結 構3 32、3 5 2之部分容納空間内，而不可以此具體實施方式 加以限縮。 、請一併參閱第三圖及第四圖，本發明第二實施例之氣 體感測包括：—絕緣基底41 ;形成于絕緣基底41 表面之兩電極43、45 ;-形成於絕緣基底41及兩電極43、The granules 372 may also be distributed only in part of the accommodating structure 3 32, 352 or in a part of the accommodating space of each accommodating structure 3 32, 3 52, and may not be limited to this specific embodiment. Please refer to the third and fourth figures together. The gas sensing of the second embodiment of the present invention includes:-an insulating substrate 41; two electrodes 43, 45 formed on the surface of the insulating substrate 41;-formed on the insulating substrate 41 and Two electrodes 43,
1237112 五、發明說明（5) 45表面之感測膜47，其包括感測微粒472。其中，絕緣基 底41包括若干分隔設置之容納結構412，電極43、45覆蓋 于容納結構412之内壁，部分感測微粒472容納於該分隔設 置之容納結構41 2之内。 在本實施方式中，形成於絕緣基底4丨之容納結構4 ] 2 為溝道結構，其包括一由絕緣基底4丨提供之内壁。電極 43、45通過鍍膜方式形成於絕緣基底41表面，並同時覆蓋 1若干容納結構4 1 2之内壁。由此形成的電極層以薄膜為 佳，其厚度可在100〜30〇奈米。感測膜47形成於絕緣基底 4 1表面，並覆蓋電極4 3、4 5表面。部分感測微粒ο 2則由 此分佈於容納結構4 1 2之内。因容納結構4丨2之内壁覆有電 f層，故，其提供之容納空間之形狀、大小相應改變。該 容納空間之寬度B可為感測微粒472之粒徑之2〜3倍，其深 ，H2可為寬度B之1〇倍。當然，電極層也可能僅覆蓋^二 容納結構412之部分内壁，而不應以本實施方式 者 以限縮。 相對於第一實施例之氣體感測器3，其主要不同在 於：於絕緣基底41形成若干分隔設置之容納結構412，由 此間接形成電極43、45與感測膜47之接觸部分的 構’以收容部分感測微粒472。 、、° 另，本領域所屬技術人員應知曉，本發明提供之氣體 感測器包括厚膜型及薄膜型，視感測膜之加工工藝而定。 f:明提供之氣體感測器還可配以—加熱裝置，：加埶裝 成一於絕—緣端，在檢測時，其用於提高反應1237112 V. Description of the invention (5) 45 A sensing film 47 on the surface, which includes sensing particles 472. Among them, the insulating substrate 41 includes a plurality of accommodating structures 412, the electrodes 43, 45 cover the inner wall of the accommodating structure 412, and a part of the sensing particles 472 are accommodated in the accommodating structure 41 2 of the detached configuration. In this embodiment, the receiving structure 4] 2 formed on the insulating substrate 4 丨 is a channel structure, which includes an inner wall provided by the insulating substrate 4 丨. The electrodes 43 and 45 are formed on the surface of the insulating substrate 41 by a coating method, and simultaneously cover the inner walls of a plurality of receiving structures 4 1 2. The electrode layer thus formed is preferably a thin film, and its thickness may be 100 to 300 nm. The sensing film 47 is formed on the surface of the insulating substrate 41 and covers the surfaces of the electrodes 4 3, 4 5. Part of the sensing particles ο 2 are thus distributed within the containing structure 4 1 2. Because the inner wall of the accommodating structure 4 丨 2 is covered with an electric f-layer, the shape and size of the accommodating space provided by it are changed accordingly. The width B of the accommodating space may be 2 to 3 times the particle diameter of the sensing particles 472, and the depth B thereof may be 10 times the width B. Of course, the electrode layer may cover only a part of the inner wall of the second accommodating structure 412, and should not be limited to this embodiment. Compared with the gas sensor 3 of the first embodiment, the main difference is that a plurality of spaced apart receiving structures 412 are formed on the insulating substrate 41, thereby indirectly forming the structure of the contact portions of the electrodes 43, 45 and the sensing film 47. Sensing particles 472 are contained. In addition, those skilled in the art should know that the gas sensors provided by the present invention include thick film type and thin film type, depending on the processing technology of the sensing film. f: The gas sensor provided by Ming can also be equipped with a heating device, which can be added to the insulation edge, which is used to improve the response during the test.
1237112 五、發明說明（6) 溫度，加速被測氣體於感測微粒表面之吸附過程。 本發明對絕緣基底或電極進行加工，使其形成 — 分隔之容納結構，並由此在電極與感測膜之接觸部相右干 成若干容納空間，用以收容感測微粒。利用頌 目應形 巴緣基底咬雷 極之基材所提供之分隔，增加感測微粒之分崙庚 电 微粒之間的空隙得以保留，確保經高溫製程後感測膜仍= 備較高之疏鬆性’並能增加被測氣體之流通率，進」+二 加氣體感測器之靈敏度。 ^增 綜上所述，本發明確已符合發明專利要件，爰依法提 出專利申清准γ 乂上所述者僅為本發明之較佳實施例， 舉凡熟悉本案技藝之人士，於援依本案發明精神所作之等 效修飾或變化，皆應包含於以下之申請專利範圍内。1237112 V. Description of the invention (6) The temperature accelerates the adsorption process of the measured gas on the surface of the sensing particles. In the invention, an insulating substrate or an electrode is processed so as to form a partitioned accommodating structure, and a plurality of accommodating spaces are formed on the right side of the contact portion between the electrode and the sensing film to accommodate the sensing particles. Utilizing the separation provided by the base material of the eye-catching bar-shaped substrate and the lightning bite to increase the gap between the sensing particles and the galvanic particles, to ensure that the sensing film is still prepared after a high temperature process. "Looseness" and can increase the flow rate of the measured gas, and increase the sensitivity of the two plus gas sensors. ^ In summary, the present invention has indeed met the requirements of the invention patent. The patent application according to the law is required. 所述 The above is only a preferred embodiment of the present invention. For those who are familiar with the skills of this case, please refer to this case. All equivalent modifications or changes made by the spirit of the invention should be included in the scope of patent application below.
1237112 圖式簡單說明 第一圖係本發明第一實施方式之氣體感測器之示意圖； 第二圖係第一圖所示氣體感測器電極之局部放大示意圖； 第三圖係本發明第二實施方式之氣體感測器之示意圖； 第四圖係第三圖所示氣體感測器電極之局部放大示意 圖。 【元件符號說明】 絕緣基底 容納結構 感測微粒 31，41 332, 352, 4 1 2 372, 472 氣體感測器 3，4 電極 3 3，3 5，4 3，4 5 感測膜 3 7，4 71237112 The drawings are briefly explained. The first diagram is a schematic diagram of the gas sensor of the first embodiment of the present invention. The second diagram is a partially enlarged schematic diagram of the gas sensor electrode shown in the first diagram. The third diagram is the second diagram of the present invention. The schematic diagram of the gas sensor of the embodiment; the fourth diagram is a partially enlarged schematic diagram of the gas sensor electrode shown in the third diagram. [Description of component symbols] Insulating substrate containing structure sensing particles 31, 41 332, 352, 4 1 2 372, 472 Gas sensor 3, 4 Electrode 3 3, 3 5, 4 3, 4 5 Sensing film 3 7, 4 7
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