CN111272827B - Noble metal enhancement mode semiconductor heterojunction gas sensor - Google Patents
Noble metal enhancement mode semiconductor heterojunction gas sensor Download PDFInfo
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- CN111272827B CN111272827B CN202010150046.7A CN202010150046A CN111272827B CN 111272827 B CN111272827 B CN 111272827B CN 202010150046 A CN202010150046 A CN 202010150046A CN 111272827 B CN111272827 B CN 111272827B
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 146
- 229910000510 noble metal Inorganic materials 0.000 title claims abstract description 69
- 230000005684 electric field Effects 0.000 claims abstract description 14
- 239000000758 substrate Substances 0.000 claims abstract description 13
- 238000002198 surface plasmon resonance spectroscopy Methods 0.000 claims abstract description 5
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 10
- 239000000463 material Substances 0.000 claims description 5
- 239000004408 titanium dioxide Substances 0.000 claims description 5
- ITRNXVSDJBHYNJ-UHFFFAOYSA-N tungsten disulfide Chemical compound S=[W]=S ITRNXVSDJBHYNJ-UHFFFAOYSA-N 0.000 claims description 3
- 230000005669 field effect Effects 0.000 claims 1
- 230000001960 triggered effect Effects 0.000 claims 1
- 239000003574 free electron Substances 0.000 abstract description 27
- 238000001514 detection method Methods 0.000 abstract description 16
- 230000008859 change Effects 0.000 abstract description 10
- 230000035945 sensitivity Effects 0.000 abstract description 8
- 239000007789 gas Substances 0.000 description 68
- 239000001301 oxygen Substances 0.000 description 15
- 229910052760 oxygen Inorganic materials 0.000 description 15
- -1 oxygen anions Chemical class 0.000 description 10
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 7
- 229910021389 graphene Inorganic materials 0.000 description 7
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 5
- 230000009286 beneficial effect Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 230000002349 favourable effect Effects 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 2
- 238000001179 sorption measurement Methods 0.000 description 2
- 239000002341 toxic gas Substances 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- 230000003197 catalytic effect Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000004939 coking Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000004880 explosion Methods 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 238000005272 metallurgy Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
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Classifications
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
- G01N27/02—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance
- G01N27/04—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance
- G01N27/12—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance of a solid body in dependence upon absorption of a fluid; of a solid body in dependence upon reaction with a fluid, for detecting components in the fluid
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
- G01N27/02—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance
- G01N27/04—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance
- G01N27/12—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance of a solid body in dependence upon absorption of a fluid; of a solid body in dependence upon reaction with a fluid, for detecting components in the fluid
- G01N27/125—Composition of the body, e.g. the composition of its sensitive layer
Abstract
The invention relates to a noble metal enhanced semiconductor heterojunction gas sensor which comprises a substrate layer, wherein a semiconductor heterojunction is arranged above the substrate layer, a plurality of noble metal blocks which are arranged at intervals are arranged above the semiconductor heterojunction, and a first electrode and a second electrode which are arranged at intervals are also arranged between the substrate layer and the semiconductor heterojunction; according to the noble metal enhanced semiconductor heterojunction gas sensor, the noble metal block is arranged above the semiconductor heterojunction, and surface plasmon resonance is initiated on the surface of the noble metal block through light incidence, so that a strong electric field is gathered on the surface of the noble metal block, the free electron concentration of the semiconductor heterojunction is adjusted through the strong electric field, the resistance of the semiconductor heterojunction is changed violently, and the detection of gas molecules can be realized through detecting the change of the resistance; compared with the traditional gas sensor, the gas sensor has the advantages of simple structure and high gas detection sensitivity.
Description
Technical Field
The invention belongs to the technical field of gas detection, and particularly relates to a noble metal enhanced semiconductor heterojunction gas sensor.
Background
A gas sensor is an instrument that detects the concentration of a gas. The instrument is suitable for dangerous places with combustible or toxic gas, and can continuously detect the content of the detected gas in the air within the lower explosion limit for a long time. The device can be widely applied to various industries with combustible or toxic gas, such as gas, petrochemical industry, metallurgy, steel, coking, electric power and the like, and is an ideal monitoring instrument for ensuring property and personal safety.
The semiconductor gas sensor is a gas sensor using a semiconductor gas sensitive element as a sensitive element, is the most common gas sensor, is widely applied to combustible gas leakage detection devices of families and factories, and is suitable for detection of methane, liquefied gas, hydrogen and the like.
Semiconductor gas sensors can be classified into surface control type and bulk control type according to whether the interaction between a semiconductor and a gas is in the surface or the interior of the sensor; according to the changing physical properties of semiconductors, the semiconductor device can be classified into a resistive type and a non-resistive type. The resistance type semiconductor gas sensor detects the composition or concentration of gas by using the change of resistance value when a semiconductor contacts the gas; the non-resistance type semiconductor gas sensor directly or indirectly detects gas by changing some characteristics of a semiconductor according to adsorption and reaction of the gas.
The gas sensor mainly has the following defects: the gas sensor has the factors of low sensitivity, poor selectivity, high power consumption, complex preparation process, high price and the like, and all the factors are related to the sensitive materials adopted by the gas sensor and the structure of the gas sensor.
Disclosure of Invention
The invention provides a noble metal enhanced semiconductor heterojunction gas sensor which comprises a substrate layer, wherein a semiconductor heterojunction is arranged above the substrate layer, a plurality of noble metal blocks arranged at intervals are arranged above the semiconductor heterojunction, and a first electrode and a second electrode which are arranged at intervals are arranged between the substrate layer and the semiconductor heterojunction.
The semiconductor heterojunction includes a semiconductor layer, a plurality of spaced apart semiconductor blocks disposed above the semiconductor layer.
The semiconductor blocks are arranged periodically.
The noble metal block is arranged above the semiconductor layer.
The noble metal blocks and the semiconductor blocks are arranged at intervals.
The semiconductor layer and the semiconductor block are made of different semiconductor materials.
The valence and conduction bands of the semiconductor layer are both higher than the valence and conduction bands of the semiconductor bulk.
The semiconductor layer is titanium dioxide (TiO) 2 ) The semiconductor block is made of tungsten disulfide.
The noble metal blocks are arranged periodically.
The noble metal block is wedge-shaped.
Compared with the prior art, the invention has the beneficial effects that: according to the noble metal enhanced semiconductor heterojunction gas sensor provided by the invention, the noble metal block is arranged above the semiconductor heterojunction, and surface plasmon resonance is initiated on the surface of the noble metal block through light incidence, so that a strong electric field is gathered on the surface of the noble metal block, and the strong electric field is favorable for combining free electrons in the semiconductor heterojunction with nearby oxygen molecules to become oxygen anions, so that the concentration of the free electrons in the semiconductor heterojunction is reduced, and the resistance of the semiconductor heterojunction is increased violently; when the gas to be detected contacts the sensor, gas molecules react with more oxygen anions to generate more free electrons, and the free electrons return to the gas sensor, so that the concentration of the free electrons of the semiconductor heterojunction is increased violently, the resistance is reduced violently, and the detection of the gas molecules can be realized by detecting the change of the resistance; compared with the traditional measuring gas sensor, the gas sensor has the advantages of simple structure and high gas detection sensitivity.
The present invention will be described in further detail below with reference to the accompanying drawings.
Drawings
Fig. 1 is a first schematic structural diagram of a noble metal enhanced semiconductor heterojunction gas sensor.
Fig. 2 is a schematic structural diagram ii of the noble metal enhanced semiconductor heterojunction gas sensor.
Fig. 3 is a schematic structural diagram three of the noble metal enhanced semiconductor heterojunction gas sensor.
Fig. 4 is a schematic structural diagram of a noble metal enhanced semiconductor heterojunction gas sensor.
In the figure: 1. a base layer; 2. a semiconductor heterojunction; 3. a first electrode; 4. a second electrode; 5. a semiconductor layer; 6. a semiconductor block; 7. a noble metal block; 8. a graphene layer.
Detailed Description
To further illustrate the technical means and effects of the present invention adopted to achieve the predetermined purposes, the following detailed description of the embodiments, structural features and effects of the present invention will be made with reference to the accompanying drawings and examples.
Example 1
The invention provides a noble metal enhancement type semiconductor heterojunction gas sensor as shown in fig. 1-4, which comprises a substrate layer 1 with supporting and protecting functions, wherein a semiconductor heterojunction 2 is arranged above the substrate layer 1, a plurality of noble metal blocks 7 arranged at intervals are arranged above the semiconductor heterojunction 2, a first electrode 3 and a second electrode 4 which are arranged at intervals are also arranged between the substrate layer 1 and the semiconductor heterojunction 2, and specifically, the first electrode 3 and the second electrode 4 are arranged above the substrate layer 1 and are positioned at two sides of the semiconductor heterojunction 2; the semiconductor heterojunction 2 comprises a semiconductor layer 5, a plurality of semiconductor blocks 6 arranged above the semiconductor layer 5 and spaced from each other, wherein the semiconductor layer 5 and the semiconductor blocks 6 are made of different semiconductor materials; the valence and conduction bands of semiconductor layer 5 are higher than the valence and conduction bands of semiconductor bulk 6, which facilitates the transfer of electrons in semiconductor layer 5 into semiconductor bulk 6, allowing more holes to accumulate in semiconductor layer 5, thereby causing more electron-hole separation, thereby increasing the resistance change of semiconductor heterojunction 2; in addition, the energy level of electrons in the semiconductor layer 5 is lower than the work function of the noble metal block 7, so that photo-generated electrons are transferred into the noble metal block 7, so that a Schottky junction is formed on the cross section of the semiconductor layer 5 and the noble metal block 7, and the recombination of electron holes in the transportation process is inhibited; in this way, the resistance variation of semiconductor heterojunction 2 can be further increased. Specifically, the noble metal block 7 is disposed above the semiconductor layer 5, and the noble metal block 7 and the semiconductor block 6 are arranged at an interval; the noble metal block 7 is higher than the semiconductor block 6. By means of vertical incidence of light (incidence from top to bottom in the direction of the attached drawing), surface plasmon resonance is initiated on the surface of the noble metal block 7, so that a strong electric field is gathered on the surface of the noble metal block 7, namely, the strong electric field is formed around the semiconductor block 6, the strong electric field is favorable for combining free electrons in the semiconductor heterojunction 2 with nearby oxygen molecules and changing the free electrons into oxygen anions, the concentration of the free electrons in the semiconductor heterojunction 2 is reduced, and the resistance of the semiconductor heterojunction 2 is increased violently; when the gas to be detected is contacted with the sensor, gas molecules react with more oxygen anions to generate more free electrons, the free electrons return to the gas sensor, so that the concentration of the free electrons of the semiconductor heterojunction 2 is increased violently, the resistance is reduced violently, the change of the resistance of the semiconductor heterojunction 2 can be detected through the electric connection of the first electrode 3 and the second electrode 4 with external detection equipment, and the detection of the gas molecules is realized.
Further, the semiconductor blocks 6 are arranged periodically.
Further, the noble metal blocks 7 are arranged periodically.
That is to say, the semiconductor blocks 6 and the noble metal blocks 7 are arranged at intervals and are arranged periodically, that is, the period of the semiconductor blocks 6 is the same as that of the noble metal blocks 7, so that the contact area between the semiconductor heterojunction 2 and the gas can be increased to the maximum extent, and the adsorption of more gas is facilitated, so that the resistance change of the semiconductor heterojunction 2 with the maximum resistance before and after the detection of the gas to be detected is caused, and the noble metal enhanced semiconductor heterojunction gas sensor has higher sensitivity.
Further, the semiconductor layer 5 is titanium dioxide TiO 2 Made of semiconductor block 6 of tungsten disulfide WS 2 And (4) preparing.
Further, as shown in fig. 2, the noble metal block 7 is wedge-shaped, so that a certain light gathering effect is achieved, when light enters, more light can be gathered on the semiconductor heterojunction 2, so that a strong electric field is formed around the semiconductor block 6, the strong electric field is beneficial to combining free electrons inside the semiconductor heterojunction 2 with nearby oxygen molecules to form oxygen anions, the concentration of the free electrons inside the semiconductor heterojunction 2 is reduced, and the resistance of the semiconductor heterojunction 2 is increased dramatically; when the gas to be detected is contacted with the sensor, gas molecules react with more oxygen anions to generate more free electrons, the free electrons return to the gas sensor, so that the concentration of the free electrons of the semiconductor heterojunction 2 is increased violently, the resistance is reduced violently, and the change of the resistance of the semiconductor heterojunction 2 can be detected through the electrical connection of the first electrode 3 and the second electrode 4 with external detection equipment, so that the detection of the gas molecules is realized.
Further, as shown in fig. 3, the noble metal block 7 is wedge-shaped, the semiconductor block 6 is also wedge-shaped, and the height of the noble metal block 7 is higher than that of the semiconductor block 6, so that light can be further collected on the semiconductor heterojunction 2, which is beneficial to forming a strong electric field around the semiconductor block 6, and the strong electric field is beneficial to combining free electrons inside the semiconductor heterojunction 2 with nearby oxygen molecules to become oxygen anions, so that the concentration of free electrons inside the semiconductor heterojunction 2 is reduced, and the resistance of the semiconductor heterojunction 2 is greatly increased; when the gas to be detected contacts the sensor, gas molecules react with more oxygen anions to generate more free electrons, and the free electrons return to the gas sensor, so that the concentration of the free electrons of the semiconductor heterojunction 2 is increased dramatically, the resistance is further reduced dramatically, and the change of the resistance of the semiconductor heterojunction 2 can be detected by electrically connecting the first electrode 3 and the second electrode 4 with external detection equipment, so that the detection of the gas molecules is realized, and the sensitivity and the accuracy of the noble metal enhanced semiconductor heterojunction gas sensor are further improved.
Further, as shown in fig. 4, the noble metal block 7 is wedge-shaped, the semiconductor block 6 is also wedge-shaped, and the graphene layer 8 is disposed above the noble metal enhanced semiconductor heterojunction gas sensor, the graphene layer 8 is made of graphene blocks, that is, graphene sheets, and is not an integral graphene film, so that the gas to be detected can be more gathered around the semiconductor block 6 and on the upper surface of the semiconductor layer 5, and when the graphene layer 8 strengthens plasmon resonance on the surface of the noble metal block 7, the relaxation time of electrons is increased, the electron lifetime is increased, more electron holes are separated, and before and after the gas to be detected is detected, the resistance change of the semiconductor heterojunction 2 is larger, and the sensitivity is higher.
Further, the base layer 1 may be made of a material having a stable structure and good insulation, such as silicon dioxide.
Further, the noble metal block 7 can be made of noble metals such as Pt, ag, au, ru, and the like, so that the noble metal block 7 has a better catalytic effect on the semiconductor heterojunction 2, thereby better improving the sensitivity of the noble metal enhanced semiconductor heterojunction gas sensor.
In summary, in the noble metal enhanced semiconductor heterojunction gas sensor, the noble metal block 7 is arranged above the semiconductor heterojunction 2, and surface plasmon resonance is induced on the surface of the noble metal block 7 through light incidence, so that a strong electric field is gathered on the surface of the noble metal block 7, and the strong electric field is favorable for combining free electrons in the semiconductor heterojunction with nearby oxygen molecules to become oxygen anions, so that the concentration of the free electrons in the semiconductor heterojunction 2 is reduced, and the resistance of the semiconductor heterojunction 2 is increased sharply; when the gas to be detected contacts the sensor, gas molecules react with more oxygen anions to generate more free electrons, and the free electrons return to the gas sensor, so that the concentration of the free electrons of the semiconductor heterojunction 2 is increased violently, the resistance is reduced violently, and the detection of the gas molecules can be realized by detecting the change of the resistance; compared with the traditional measuring gas sensor, the gas sensor has the advantages of simple structure and high gas detection sensitivity.
The foregoing is a more detailed description of the invention in connection with specific preferred embodiments and it is not intended that the invention be limited to these specific details. For those skilled in the art to which the invention pertains, several simple deductions or substitutions can be made without departing from the spirit of the invention, and all shall be considered as belonging to the protection scope of the invention.
Claims (6)
1. A noble metal enhancement mode semiconductor heterojunction gas sensor is characterized in that: the heterojunction field effect transistor comprises a substrate layer (1), wherein a semiconductor heterojunction (2) is arranged above the substrate layer (1), a plurality of noble metal blocks (7) which are arranged at intervals are arranged above the semiconductor heterojunction (2), and a first electrode (3) and a second electrode (4) which are arranged at intervals are arranged between the substrate layer (1) and the semiconductor heterojunction (2); the semiconductor heterojunction (2) comprises a semiconductor layer (5) and a plurality of semiconductor blocks (6) which are arranged above the semiconductor layer (5) and are spaced from each other; the semiconductor blocks (6) are arranged periodically; the noble metal block (7) is arranged above the semiconductor layer (5); the noble metal block (7) and the semiconductor block (6) are arranged at intervals, and the height of the noble metal block (7) is higher than that of the semiconductor block (6); the semiconductor layer (5) and the noble metal block (7) form a Schottky junction, the energy level of electrons in the semiconductor layer (5) is lower than the work function of the noble metal block (7), surface plasmon resonance is triggered by light vertically incident on the noble metal block (7), and a strong electric field is formed on the surface of the noble metal block (7) in a gathering manner.
2. The noble metal-enhanced semiconductor heterojunction gas sensor according to claim 1, wherein: the semiconductor layer (5) and the semiconductor block (6) are made of different semiconductor materials.
3. A noble metal enhanced semiconductor heterojunction gas sensor as claimed in claim 1, wherein: the valence band and the conduction band of the semiconductor layer (5) are higher than those of the semiconductor block (6).
4. A noble metal enhanced semiconductor heterojunction gas sensor as claimed in claim 1, wherein: the semiconductor layer (5) is titanium dioxide (TiO) 2 ) The semiconductor block (6) is made of tungsten disulfide.
5. The noble metal-enhanced semiconductor heterojunction gas sensor according to claim 1, wherein: the noble metal blocks (7) are arranged periodically.
6. A noble metal enhanced semiconductor heterojunction gas sensor as claimed in claim 1, wherein: the noble metal block (7) is wedge-shaped.
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| CN103529081A (en) * | 2013-10-21 | 2014-01-22 | 苏州大学 | Preparation method of multilayer metal oxide porous film nano gas sensitive material |
| CN109192867A (en) * | 2018-10-16 | 2019-01-11 | 中山科立特光电科技有限公司 | A kind of photodetector of the influx and translocation type based on Schottky barrier |
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| EP2887051A1 (en) * | 2013-12-19 | 2015-06-24 | Kasemo, Bengt | Surface plasmon resonance gas sensor, gas sensing system, and gas sensing method |
| CN104332510A (en) * | 2014-10-16 | 2015-02-04 | 中国科学院上海技术物理研究所 | Subwavelength plasmonic microcavity light coupling structure for promoting photoelectric detector response |
| WO2019217792A1 (en) * | 2018-05-11 | 2019-11-14 | Carrier Corporation | Surface plasmon resonance gas detection system |
| CN109682863B (en) * | 2018-12-10 | 2020-09-08 | 华中科技大学 | TMDCs-SFOI heterojunction-based gas sensor and preparation method thereof |
| CN209993605U (en) * | 2019-08-19 | 2020-01-24 | 金华伏安光电科技有限公司 | Heterojunction infrared photoelectric detector |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN103529081A (en) * | 2013-10-21 | 2014-01-22 | 苏州大学 | Preparation method of multilayer metal oxide porous film nano gas sensitive material |
| CN109192867A (en) * | 2018-10-16 | 2019-01-11 | 中山科立特光电科技有限公司 | A kind of photodetector of the influx and translocation type based on Schottky barrier |
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| Title |
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| "Enhancing visible light-activated NO2 sensing properties of Au NPs decorated ZnO nanorods by localized surface plasmon resonance and oxygen vacancies"，C. Chen et al.，Materials Research Express，第7卷，第1-12页，2020年1月;C. Chen et al.;《Materials Research Express》;20200127;第7卷;摘要，第2-3节 * |
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Effective date of registration: 20230908 Address after: Factory Area No. 7, Fenghua Industrial Park, No. 80 9th Street, Tianjin Development Zone, Binhai New Area, Tianjin, 300000 Patentee after: BOYI (TIANJIN) PNEUMATIC TECHNOLOGY INSTITUTE Co.,Ltd. Address before: 230000 floor 1, building 2, phase I, e-commerce Park, Jinggang Road, Shushan Economic Development Zone, Hefei City, Anhui Province Patentee before: Dragon totem Technology (Hefei) Co.,Ltd. Effective date of registration: 20230908 Address after: 230000 floor 1, building 2, phase I, e-commerce Park, Jinggang Road, Shushan Economic Development Zone, Hefei City, Anhui Province Patentee after: Dragon totem Technology (Hefei) Co.,Ltd. Address before: 528402, Xueyuan Road, 1, Shiqi District, Guangdong, Zhongshan Patentee before: University OF ELECTRONIC SCIENCE AND TECHNOLOGY OF CHINA, ZHONGSHAN INSTITUTE |