CN109192867A - A kind of photodetector of the influx and translocation type based on Schottky barrier - Google Patents
A kind of photodetector of the influx and translocation type based on Schottky barrier Download PDFInfo
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- CN109192867A CN109192867A CN201811202938.6A CN201811202938A CN109192867A CN 109192867 A CN109192867 A CN 109192867A CN 201811202938 A CN201811202938 A CN 201811202938A CN 109192867 A CN109192867 A CN 109192867A
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- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/451—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising a metal-semiconductor-metal [m-s-m] structure
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Abstract
The photodetector for the influx and translocation type based on Schottky barrier that the present invention relates to a kind of, including substrate layer, first electrode layer is provided with above the substrate layer, organic material is provided with above first electrode layer, metal particle layer is distributed in the upper surface of organic material, transparent conducting thin film is provided with above metal particle layer, first electrode layer, transparent conducting thin film are electrically connected with the electrode of external power supply；The detector exists lower for absorbing incident light rate, cause there is a problem of when incident light detection detection sensitivity deficiency, side on the organic material is provided with metal particle layer and transparency conducting film, metal particle layer is enabled to enhance the absorption of incident light, to influence the Carrier Profile inside organic material, so that the Schottky barrier of schottky junction changes, so that becoming sensitiveer, quick by detection Schottky barrier variation to detect light characteristic, it is more conducive to incident light detection.
Description
Technical field
The present invention relates to photodetector technical fields, and in particular to a kind of influx and translocation type based on Schottky barrier
Photodetector.
Background technique
The physical effect of photodetector is generally divided into photon effect and photo-thermal effect, and corresponding detector is referred to as light
Subtype detector and photo-thermal type detector.The common trait of various photon type detectors is using semiconductor energy carrying material, photon
Energy has generated directly effect to photoelectronic in detection material, therefore photon type detector has cut-off response frequency or wavelength,
And spectral response is limited to a certain wave band, therefore different material systems determines that detector has different response wave length scopes,
Generally it is difficult to use in wide range or multispectral section of detection.Photo-thermal type detector is not caused directly after absorbing optical radiation energy
The change of internal electron state, but the luminous energy of absorption is become the energy of thermal motion of lattice, cause detecting element temperature to rise,
It changes so as to cause the electrical properties of detecting element or other physical properties, therefore the size of photo-thermal effect and photon energy does not have
There is direct relation, photo-thermal type detector is in principle to frequency without selectivity.Due to infrared band especially in LONG WAVE INFRARED with
The photo-thermal effect of upper wave band becomes apparent from compared to Uv and visible light, therefore optothermal detector is commonly used in the spy of middle long wave optical radiation
It surveys, typical photo-thermal type detector includes the types such as micro-metering bolometer, pyroelectric detector and thermocouple detector.Due to temperature
Raising is the effect of heat accumulation, and the general response speed of thermal detector based on photo-thermal effect is slower, in millisecond magnitude.
Use metal-semicroductor barrier (referred to as Schottky barrier) replace p-n junction semiconductor devices developed with
Convert incident light into electric energy.In Schottky barrier photodetector, silicon is often used as semiconductor material, wherein the light is examined
Device work is surveyed in the part IR that electromagnetic energy is composed.In its most traditional mode, a silicon substrate schottky barrier photodiode
Including a thin metal film (such as silicide film), it is arranged on a silicon layer.Incident light vertically (that is, " rectangular ") applies
So far structure, excessively relatively thin metal film, wherein film only absorbs sub-fraction light, therefore leads to extremely low external quantum efficiency
Grade.Therefore, the photodetector of traditional " vertical incidence " needs a relatively large activity detection area, to collect enough
The luminous energy of quantity is to appropriately function.However, dark current (unwanted noise signal) also increases when detection zone increases
Add.Although such vertical incidence detector, which usually requires that, to be cooled down in addition, structure is relatively easy, again compared with
High dark current value is associated.
For many years, improvement of the silicon substrate Schottky barrier photodetector in terms of the absorption of light and quantum efficiency has become perhaps
The object more studied.In one example, the United States Patent (USP) 5,685 of K.Saito et al. is such as licensed on November 11st, 1197,
It, can be to the suction of light by a surface plasmon mode on the metal-semiconductor interface disclosed in 919
Receipts are improved.In this structure, the lens setting of a semi-cylindrical on the metal layer, and is used for the incidence of vertical incidence
Light is redirected to an angle relevant to surface plasma excimer layer is formed.It was licensed on August 15th, 1989
The United States Patent (USP) 4,857,973 of A.C.Yang et al. discloses an optional Schottky barrier optical detector device, and wherein light is examined
Device monocrystalline silicon rib waveguide single-chip integration is surveyed, and is positioned when optical signal passes through below silicide layer along rib waveguide
When, absorb " tail " of optical signal.The improvement of absorption efficiency, but main loss can be obtained although with the structure of Yang et al.
It still remains, since the rib is formed and partly removing relatively thick silicon layer portion, along rib waveguide structure
Side wall there are scattering losses.In addition, the size (especially height) for controlling such rib waveguide structure still has difficulty,
It is also such for controlling its smoothness.In fact, the realization of such " rib " structure (especially with submicrometer scale) for
There is very big difficulty for conventional processing technique based on CMOS.In addition, Yang et al. propose non-planar surface geometry from
It is not considered as preferred ideal structure for the viewpoint of manufacture, for the reliability and stability of design structure
It is even more so.
Based on the potential advantages of silicon substrate Schottky barrier photodetector, can very advantageously provide a kind of relatively simple
Equipment with high quantum efficiency, and is swift in response, manufacture can using with cmos compatible planar process and
Material is not necessarily to a large amount of fund or technological investment.
However, the existing optothermal detector based on Schottky barrier exist it is lower for absorbing incident light rate, cause
There are the insufficient defects of detection sensitivity when progress incidence light detection.
Summary of the invention
In view of the above-mentioned problems, the optothermal detector that present invention aim to address existing based on Schottky barrier exists pair
It is lower in absorbing incident light rate, cause there is a problem of when incident light detection detection sensitivity deficiency.
For this purpose, the photodetector of the present invention provides a kind of influx and translocation type based on Schottky barrier, including substrate layer,
It is provided with first electrode layer above the substrate layer, organic material is provided with above the first electrode layer, it is described organic
Metal particle layer is distributed in the upper surface of material, is provided with transparent conducting thin film above the metal particle layer, and described first
Electrode layer, transparent conducting thin film are electrically connected with the electrode of external power supply.
The transparent conducting thin film is graphene transparent conducting thin film or metal oxide transparent conducting thin film.
The metal oxide transparent conducting thin film is any one in ITO, FTO, ZAO.
The metal particle layer with a thickness of the nm of 10nm~30.
The metal particle layer is made of the nano-metal particle that multiple periods arrange.
The nano-metal particle is isotropic structure.
The nano-metal particle is discoid or circular.
The nano-metal particle is chiral structure.
The nano-metal particle is fylfot.
Beneficial effects of the present invention: the light detection of this influx and translocation type based on Schottky barrier provided by the invention
Device, solve the existing optothermal detector based on Schottky barrier exist it is lower for absorbing incident light rate, cause into
There is a problem of that detection sensitivity is insufficient when penetrating light detection, by side on the organic material be provided with metal particle layer and
Transparency conducting film enables metal particle layer to enhance the absorption of incident light, to influence the carrier point inside organic material
Cloth, so that the Schottky barrier of schottky junction changes, so that by the variation of detection Schottky barrier come detection light spy
Property becomes sensitiveer, quick, is more conducive to incident light detection.
The present invention is described in further details below with reference to attached drawing.
Detailed description of the invention
Fig. 1 is the optical detector structure schematic diagram of the influx and translocation type based on Schottky barrier.
Fig. 2 is metallic particles schematic diagram of a layer structure one.
Fig. 3 is metallic particles schematic diagram of a layer structure two.
Fig. 4 is metallic particles schematic diagram of a layer structure three.
Fig. 5 is metallic particles schematic diagram of a layer structure four.
In figure: 1, substrate layer；2, first electrode layer；3, organic material；4 metal particle layers；5, transparent conducting thin film.
Specific embodiment
Reach the technical means and efficacy that predetermined purpose is taken for the present invention is further explained, below in conjunction with attached drawing and reality
Example is applied to a specific embodiment of the invention, structure feature and its effect, detailed description are as follows.
Embodiment 1
In order to solve the existing optothermal detector based on Schottky barrier exist it is lower for absorbing incident light rate, cause into
There is a problem of detection sensitivity deficiency when row incidence light detection.The present invention provides a kind of as shown in Figure 1 based on Xiao
The photodetector of the influx and translocation type of special base potential barrier, including substrate layer 1, the substrate layer 1 primarily serve supporting role, substrate layer 1
Silica, quartz, glass etc. can be used to be made；The top of the substrate layer 1 is provided with first electrode layer 2, and described first
The top of electrode layer 2 is provided with organic material 3, and metal particle layer 4, the metal is distributed in the upper surface of the organic material 3
The top of stratum granulosum 4 is provided with transparent conducting thin film 5, and schottky junction, metal are formed between first electrode layer 2 and organic material 3
Also form schottky junction between stratum granulosum 4 and organic material 3, the first electrode layer 2, transparent conducting thin film 5 with external electricity
The electrode in source is electrically connected, for detecting the variation of the Schottky barrier between corresponding first electrode layer 2, metal particle layer 4；Due to
Metal particle layer 4 can generate the resonant reaction of surface phasmon with incident light, so that the upper following table of metal particle layer 4
Stronger electric field is generated between face, which can influence the Carrier Profile inside organic material 3, so that metal particle layer 4
The Schottky barrier of schottky junction between organic material 3 changes, Schottky brought by the incident light of different characteristics
The variation of potential barrier is not identical, by the variation for detecting Schottky barrier, so that it may obtain the characteristic of incident light；Meanwhile metal
The transparent conducting thin film 5 of the upper layer setting of granulosa 4 can also enhance the absorption of incident light, so that above-mentioned Schottky barrier changes
It is more obvious, to improve the efficiency of incident light detection, sensitivity.
The main effect of transparent conducting thin film 5 is light transmission and conduction, and light transmission is to ensure that incident light can smoothly thoroughly
It crosses, to reach metal particle layer 4, conductive characteristic is in order to 4 external electrode of metal particle layer, consequently facilitating detection Schottky
Potential barrier；Therefore transparent conducting thin film 5 can choose graphene transparent conducting thin film or metal oxide transparent conducting thin film；Graphite
Alkene transparent conducting thin film has extraordinary chemical stability, flexibility, electric conductivity, transparent thermal conductivity；Graphene light transmission is led
The conduction velocity of electronics is up to 8*10 in conductive film5M/s, the resistance very little of electron transfer rate, can move Asia in graphene
The distance of micron is without scattering；On the other hand, graphene opacity under the irradiation of light only has 2.2~2.4%, reflection
Rate is less than 0.1%, can be ignored, and target molecule 3 is placed on graphene transparent conducting thin film and carries out catalysis reaction, non-
It is normal it is necessary to；When transparent conducting thin film 5 is metal oxide transparent conducting thin film, can choose as ITO, FTO, ZAO tri-
Any one in big system.
The thickness of metal particle layer 4 selects, and mainly guarantees the absorption of incident light, therefore, the thickness of the metal particle layer 4
Degree is 10nm~30nm, and preferential can choose size as 20nm, 25nm, 15nm.
The metal particle layer 4 is made of the nano-metal particle that multiple periods arrange, the spacing one of nano-metal particle
As select then between 200nm~800nm, can specifically keep punching determination according to the wavelength of incident light, as long as can guarantee into
Effective surface plasmon resonance can be carried out with metal particle layer 4 by penetrating light.
In addition, above-mentioned nano-metal particle if isotropic structure, then may make the suction based on Schottky barrier
Receive the polarization direction that enhanced photodetector does not depend on incident light；Preferential, the nano-metal particle is discoid, such as figure
Shown in 3；Or the nano-metal particle is annular shape, as shown in Figure 4.
Above-mentioned nano-metal particle is if anisotropic structure, for example, the nano-metal particle is rectangular-shaped, such as figure
Shown in 2；The photodetector for being then somebody's turn to do the influx and translocation type based on Schottky barrier can also further detect the spy of linearly polarized light
Property.
When above-mentioned nano-metal particle be chiral structure, then should influx and translocation type based on Schottky barrier light detection
Device can also further detect the characteristic of circularly polarized light.Preferential, the nano-metal particle is fylfot, as shown in Figure 5.
Shown in sum up, the photodetector of this influx and translocation type based on Schottky barrier provided by the invention is solved existing
With the presence of it is lower for absorbing incident light rate based on the optothermal detector of Schottky barrier, cause to carry out incident light detection
When there is a problem of that detection sensitivity is insufficient, by being provided with metal particle layer 4 and light transmitting electro-conductive above organic material 3
Film 5 enables metal particle layer 4 to enhance the absorption of incident light, so that the Carrier Profile inside organic material 3 is influenced, into
And the Schottky barrier of schottky junction is changed, so that being become by detection Schottky barrier variation to detect light characteristic
It is sensitiveer, quick, it is more conducive to incident light detection.
The organic material 3 is made of organic oligomer perhaps polymer or the mixture including different organic materials
Or the mixture of different organic and inorganic materials, as long as organic material 3 is conductive.
The above content is a further detailed description of the present invention in conjunction with specific preferred embodiments, and it cannot be said that
Specific implementation of the invention is only limited to these instructions.For those of ordinary skill in the art to which the present invention belongs, exist
Under the premise of not departing from present inventive concept, a number of simple deductions or replacements can also be made, all shall be regarded as belonging to of the invention
Protection scope.
Claims (9)
1. a kind of photodetector of the influx and translocation type based on Schottky barrier, including substrate layer (1), the substrate layer (1)
Top is provided with first electrode layer (2), is provided with organic material (3) above the first electrode layer (2), it is characterised in that:
The upper surface of the organic material (3) is distributed with metal particle layer (4), is provided with light transmission above the metal particle layer (4)
Conductive film (5), the first electrode layer (2), transparent conducting thin film (5) are electrically connected with the electrode of external power supply.
2. a kind of photodetector of the influx and translocation type based on Schottky barrier as described in claim 1, it is characterised in that:
The transparent conducting thin film (5) is graphene transparent conducting thin film or metal oxide transparent conducting thin film.
3. a kind of photodetector of the influx and translocation type based on Schottky barrier as claimed in claim 2, it is characterised in that:
The metal oxide transparent conducting thin film is any one in ITO, FTO, ZAO.
4. a kind of photodetector of the influx and translocation type based on Schottky barrier as described in claim 1, it is characterised in that:
The metal particle layer (4) with a thickness of the nm of 10nm~30.
5. a kind of photodetector of the influx and translocation type based on Schottky barrier as described in claim 1, it is characterised in that:
The nano-metal particle that the metal particle layer (4) is arranged by multiple periods is made.
6. a kind of photodetector of the influx and translocation type based on Schottky barrier as claimed in claim 5, it is characterised in that:
The nano-metal particle is isotropic structure.
7. a kind of photodetector of the influx and translocation type based on Schottky barrier as claimed in claim 6, it is characterised in that:
The nano-metal particle is discoid or circular.
8. a kind of photodetector of the influx and translocation type based on Schottky barrier as claimed in claim 5, it is characterised in that:
The nano-metal particle is chiral structure.
9. a kind of photodetector of the influx and translocation type based on Schottky barrier as claimed in claim 8, it is characterised in that:
The nano-metal particle is fylfot.
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Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110797423A (en) * | 2019-11-05 | 2020-02-14 | 太原理工大学 | Gold/titanium dioxide Schottky junction thermal electron photoelectric detector and preparation method thereof |
| CN111239207A (en) * | 2020-03-03 | 2020-06-05 | 电子科技大学中山学院 | Composite structure gas sensor composed of metal oxide porous film and holes |
| CN111272825A (en) * | 2020-03-06 | 2020-06-12 | 电子科技大学中山学院 | Metal oxide gas sensor based on surface plasmon enhancement |
| CN111272826A (en) * | 2020-03-06 | 2020-06-12 | 电子科技大学中山学院 | Cascade action type semiconductor gas sensor |
| CN111272714A (en) * | 2020-03-03 | 2020-06-12 | 电子科技大学中山学院 | Metal oxide gas sensor based on optical resonant cavity principle |
| CN111272827A (en) * | 2020-03-06 | 2020-06-12 | 电子科技大学中山学院 | Noble metal enhancement mode semiconductor heterojunction gas sensor |
| CN113594291A (en) * | 2021-07-22 | 2021-11-02 | 山东大学 | Method for realizing infrared photoelectric detection by regulating metal/semiconductor Schottky junction through pyroelectric effect of polar semiconductor |
-
2018
- 2018-10-16 CN CN201811202938.6A patent/CN109192867A/en not_active Withdrawn
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110797423A (en) * | 2019-11-05 | 2020-02-14 | 太原理工大学 | Gold/titanium dioxide Schottky junction thermal electron photoelectric detector and preparation method thereof |
| CN111239207A (en) * | 2020-03-03 | 2020-06-05 | 电子科技大学中山学院 | Composite structure gas sensor composed of metal oxide porous film and holes |
| CN111272714A (en) * | 2020-03-03 | 2020-06-12 | 电子科技大学中山学院 | Metal oxide gas sensor based on optical resonant cavity principle |
| CN111272825A (en) * | 2020-03-06 | 2020-06-12 | 电子科技大学中山学院 | Metal oxide gas sensor based on surface plasmon enhancement |
| CN111272826A (en) * | 2020-03-06 | 2020-06-12 | 电子科技大学中山学院 | Cascade action type semiconductor gas sensor |
| CN111272827A (en) * | 2020-03-06 | 2020-06-12 | 电子科技大学中山学院 | Noble metal enhancement mode semiconductor heterojunction gas sensor |
| CN111272826B (en) * | 2020-03-06 | 2022-12-23 | 电子科技大学中山学院 | Cascade action type semiconductor gas sensor |
| CN111272827B (en) * | 2020-03-06 | 2022-12-23 | 电子科技大学中山学院 | Noble metal enhancement mode semiconductor heterojunction gas sensor |
| CN113594291A (en) * | 2021-07-22 | 2021-11-02 | 山东大学 | Method for realizing infrared photoelectric detection by regulating metal/semiconductor Schottky junction through pyroelectric effect of polar semiconductor |
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Application publication date: 20190111 |