TWI321909B - Switch capacitance and varactor bank applied to voltage controlled oscillator having constant kvco - Google Patents

Switch capacitance and varactor bank applied to voltage controlled oscillator having constant kvco Download PDF

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TWI321909B
TWI321909B TW095142670A TW95142670A TWI321909B TW I321909 B TWI321909 B TW I321909B TW 095142670 A TW095142670 A TW 095142670A TW 95142670 A TW95142670 A TW 95142670A TW I321909 B TWI321909 B TW I321909B
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type transistor
source
gate
transistor
switch control
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TW095142670A
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TW200824292A (en
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Jui Pin Chen
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Sunplus Technology Co Ltd
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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
    • H03B5/08—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance
    • H03B5/12—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device
    • H03B5/1228—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device the amplifier comprising one or more field effect transistors
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
    • H03B5/08—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance
    • H03B5/12—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device
    • H03B5/1206—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device using multiple transistors for amplification
    • H03B5/1212—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device using multiple transistors for amplification the amplifier comprising a pair of transistors, wherein an output terminal of each being connected to an input terminal of the other, e.g. a cross coupled pair
    • H03B5/1215—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device using multiple transistors for amplification the amplifier comprising a pair of transistors, wherein an output terminal of each being connected to an input terminal of the other, e.g. a cross coupled pair the current source or degeneration circuit being in common to both transistors of the pair, e.g. a cross-coupled long-tailed pair
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
    • H03B5/08—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance
    • H03B5/12—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device
    • H03B5/1237—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device comprising means for varying the frequency of the generator
    • H03B5/124—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device comprising means for varying the frequency of the generator the means comprising a voltage dependent capacitance
    • H03B5/1246—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device comprising means for varying the frequency of the generator the means comprising a voltage dependent capacitance the means comprising transistors used to provide a variable capacitance
    • H03B5/1253—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device comprising means for varying the frequency of the generator the means comprising a voltage dependent capacitance the means comprising transistors used to provide a variable capacitance the transistors being field-effect transistors
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
    • H03B5/08—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance
    • H03B5/12—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device
    • H03B5/1237—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device comprising means for varying the frequency of the generator
    • H03B5/1262—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device comprising means for varying the frequency of the generator the means comprising switched elements
    • H03B5/1265—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device comprising means for varying the frequency of the generator the means comprising switched elements switched capacitors
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B2200/00—Indexing scheme relating to details of oscillators covered by H03B
    • H03B2200/003—Circuit elements of oscillators
    • H03B2200/005—Circuit elements of oscillators including measures to switch a capacitor

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Inductance-Capacitance Distribution Constants And Capacitance-Resistance Oscillators (AREA)

Description

1321909 九、發明說明： 【發明所屬之技術領域】 本發明是有關於一種壓控震盪器（Voltage Controlled Oscillator)的設計，且特別是有關於一種使壓控震盪器具 有固定頻率調整常數的切換電容庫（Switch Capacitance Bank)與變容庫（VaractorBank)的設計0 【先前技術】 一般來說，壓控震盪器（Voltage Controlled Oscillator， VCO)是包含於鎖相迴路（Phase L〇cked L〇〇p，ριχ)中 並應用在數位電路或者類比電路。尤其是應用於需要大範 圍調整頻率的通信領域。 請參照第一圖，其所繪示為習知壓控震盪器示意圖。 此壓控震盪器係揭露於美國公告專利第7〇38552號，如圖 所示，第一電感器（Inductor) 2連接於一電壓源（Vcc) 與第一場效電晶體（Field Effect Transistor )6 的汲極（Drain ) 之間第场效电晶體6的源極（Source)連接至一電流 '(current source) 1〇。同理，第二電感器22連接於該 電【源（Vcc)與第__場效電晶體％的沒極之間，第二場 =電晶體26的源極連接至該電流源1()。再者，第一場效 電晶體6的波極與第二場效電晶體2 6的閘極（G ate )相^ 連接’而第二場效電晶體26的沒極與第-場效電晶體6 6 1321909 的閘極斤(Gate)也相互連接。最後，於第一場致電晶體的 汲極（節點a)與第二場效電晶體的汲極（節點之間提 供個可麦的電各器（Variabie Capacitance )。因此，即可 視為節點a與節點b之間並聯一電感器（第 二電感器）與該可變電容器而形成-LC震還^路（LC Oscdlatmg Circuit)。再者，此可變的電容器是由一切 谷庫（Switch Capacitance Bank) 40 以及〜微容單 (™t)42所組成，其中，切換電容庠：〇是= 粗，壓控MU的輸出解，輕容單元4 = 控震盪器的輸出頻率。 Θ不微孤 广卞=斤不’切換電容庫4〇中包含複數個電容受押路 徑’母-個電容受控路徑的構造皆包含工 與—第二電容器 二 每一個電容受=^二54的關控制端（細）的控制， 之間的連接或不白If擇性地達成節^與節M 點b之間時，可變_ =谷^控路徑連接於節點a與節 當電容受控路經不連等效電容值就會增加；同理， 電容器的等效電容值就^點&與節點b之間時，可變的 粗調__輪因此’利用上述方法即可 再者’如圖所示，蠻宜 接的二個場效電晶體6G、62 ^含汲極與源極相互連 極分別連接至節點/效電晶體60、62的閉 則連接至1屢控制端64”H體60、62的沒麵 田電屋控制端Μ的輸入電髮 7 1321909 改變時，場效電晶體60、62汲極與閘極之間電壓差的改變 會導致場效電晶體60、62的電容值改變。因此，利用電壓 控制端64的輸入電壓改變，即可達成微調壓控震盪器的輸 出頻率。再者’除了場效電晶體60、62可以因應輸入電壓 的改變來改變電容值之外，變容單元42也可以由變容二極 ； 體（Varicap Diode)來組成。 ； 請參照第二圖，其所繪示為習知壓控震盪器的輸出頻 率示意圖。由圖中可知，壓控震盪器的可調輸出頻率區間 瞻在f0〜Γ7之間，其中，第一頻帶（Band) I ( f5〜f7)係由 切換電容庫40的第一電容受控路徑提供的—第一電容值 (cl)以及變容單元42提供一可變動的電容值範圍（Ac) 來完成；第二頻帶Π (β〜f6)係由切換電容庫4〇的第一 電容受控路徑與第二電容受控路徑提供的該第一電容值加 上一第二電容值（cl+c2)以及變容單元42提供該可變動 勺龟各值範圍（△〇 )來完成；第三頻帶in (打〜付）係由 # =換電容庫40的第一電容受控路徑、第二電容受控路徑與 第三電容受控路徑提供的該第一電容值加上該第二電容值 “上第二電容值（cl+c2+c3)以及變容單元42提供該可 _ 變動的電容值範圍（△〇來完成；其中，第四頻帶IV°(f〇 係由切換電容庫40的第一電容受控路徑、第二電容 、第m控路徑、第四電容受控路徑提供的 弟二，容值加上該第二電容值加上該第三電容值加上一第 =容值（心2+伽4)以及變容單元42提供該可變動 、電容值範圍（△〇來完成。由於麵震心的輸出頻率 8

Claims (1)

1321909 4. 如申請專利範圍3所述的使用於壓控震盪器中的一可變 電容器，其中，該開關電路為一場效電晶體，而該場效電 晶體的一閘極即可連接至該開關控制端。 5. 如申請專利範圍1所述的使用於壓控震盪器中的一可變 電容器，其中，每一該變容受控路徑包括串聯於該第一節 點與該第二節點之間的一第一電容器、一第一變容二極 體、一開關電路、一第二變容二極體與一第二電容器，其 中，該第一電容器的一第一端連接至該第一節點，該第一 電容器的一第二端連接至該第一變容二極體的陰極端，該 第一變容二極體的陽極端連接至該開關電路的一第一端， 該開關電路的一第二端連接至該第二變容二極體的陽極 端，該第二變容二極體的陰極端連接至該第二電容器一第 一端，該第二電容器一第二端連接至該第二節點。 6. 如申請專利範圍5所述的使用於壓控震盪器中的一可變 電容器，其中，該開關電路為一場效電晶體，而該場效電 晶體的一閘極即可連接至該開關控制端。 7. 如申請專利範圍5所述的使用於壓控震蘯器中的一可變 電容器，其中，每一該變容受控路徑中的該第一變容二極 體與第二變容二極體可根據該電壓控制端提供之該電壓來 控制該第一變容二極體與該第二變容二極體的空乏區寬 度，進而調整該可變動電容值。 8. 如申請專利範圍5所述的使用於壓控震盪器中的一可變 電容器，其中，該變容受控路徑更包括： 一反閘，該開關控制端連接至該反閘的輸入端； 20 1321909 一第一電阻，係連接於該開關電路的控制端與開關控 制端之間； 一第五P型電晶體，該第五P型電晶體的源極與該第 二變容二極體的陽極端之間連接一第二電阻，該五P型電 晶體的閘極連接至該開關控制端，該第五P型電晶體汲極 連接至一電壓源； 一第四N型電晶體，該第四N型電晶體的汲極連接至 該第五P型電晶體的源極，該第四N型電晶體的閘極連接 至該開關控制端，該第四N型電晶體的源極連接至一接地 端； 一第六P型電晶體，該第六P型電晶體的源極與該第 二變容二極體的陰極端之間連接一第三電阻，該第六P型 電晶體的閘極連接至該開關控制端，該第六P型電晶體的 汲極連接至該電壓源； 一第五N型電晶體，該第五N型電晶體的汲極連接至 該第六P型電晶體的源極，該第五N型電晶體的閘極連接 至該開關控制端，該第五N型電晶體的源極與該電壓控制 端之間連接一第六電阻； 一第七P型電晶體，該第七P型電晶體的源極連接至 該第六P型電晶體源極，該第七P型電晶體的閘極連接至 該反閘的輸出端，該第七P型電晶體的汲極連接至該第五 N型電晶體的源極； 一第四P型電晶體，該第四P型電晶體的源極與該第 一變容二極體的陽極端之間連接一第四電阻，該第四P型 21 1321909 電晶體的閘極連接至該開關控制端，該第四p型電晶體的 汲極連接至該電壓源； 一第三N型電晶體，該第三N型電晶體的汲極連接至 該第四P型電晶體源極，該第三N型電晶體的閘極連接至 該開關控制端，該第三N型電晶體的源極連接至該接地端； 一第三P型電晶體，該第三P型電晶體的源極與該第 一變容二極體的陰極端之間連接一第五電阻，該第三P型 電晶體的閘極連接至該開關控制端，該第三P型電晶體的 汲極連接至該電壓源； 一第二N型電晶體，該第二N型電晶體的汲極連接至 該第三P型電晶體的源極，該第二N型電晶體的閘極連接 至該開關控制端，該第二N型電晶體的源極與該電壓控制 端之間連接該第六電阻；以及 一第二P型電晶體，該第二P型電晶體的源極連接至 該第三P型電晶體的源極，該第二P型電晶體的閘極連接 至該反閘的輸出端，該第二P型電晶體的汲極連接至該第
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TW095142670A 2006-11-17 2006-11-17 Switch capacitance and varactor bank applied to voltage controlled oscillator having constant kvco TWI321909B (en)

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TW095142670A TWI321909B (en) 2006-11-17 2006-11-17 Switch capacitance and varactor bank applied to voltage controlled oscillator having constant kvco
US11/941,299 US7564318B2 (en) 2006-11-17 2007-11-16 Switch capacitance and varactor banks applied to voltage controlled oscillator having constant frequency tuning sensitivity

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TWI321909B true TWI321909B (en) 2010-03-11

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US9356557B1 (en) * 2015-08-26 2016-05-31 Nxp B.V. Capacitor arrangement for oscillator
JP6691287B2 (ja) * 2015-11-18 2020-04-28 株式会社ソシオネクスト 電圧制御発振回路及びｐｌｌ回路
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