TWI318793B - Imroved sram device and operating metod - Google Patents

Imroved sram device and operating metod

Info

Publication number
TWI318793B
TWI318793B TW095145951A TW95145951A TWI318793B TW I318793 B TWI318793 B TW I318793B TW 095145951 A TW095145951 A TW 095145951A TW 95145951 A TW95145951 A TW 95145951A TW I318793 B TWI318793 B TW I318793B
Authority
TW
Taiwan
Prior art keywords
imroved
metod
operating
sram device
sram
Prior art date
Application number
TW095145951A
Other languages
English (en)
Other versions
TW200807693A (en
Inventor
Cheng-Hung Lee
Original Assignee
Taiwan Semiconductor Mfg
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Taiwan Semiconductor Mfg filed Critical Taiwan Semiconductor Mfg
Publication of TW200807693A publication Critical patent/TW200807693A/zh
Application granted granted Critical
Publication of TWI318793B publication Critical patent/TWI318793B/zh

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/412—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using field-effect transistors only
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B10/00—Static random access memory [SRAM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B10/00—Static random access memory [SRAM] devices
    • H10B10/12—Static random access memory [SRAM] devices comprising a MOSFET load element
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Semiconductor Memories (AREA)
  • Static Random-Access Memory (AREA)
TW095145951A 2006-07-26 2006-12-08 Imroved sram device and operating metod TWI318793B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US11/493,345 US7420854B2 (en) 2006-07-26 2006-07-26 SRAM device and operating method

Publications (2)

Publication Number Publication Date
TW200807693A TW200807693A (en) 2008-02-01
TWI318793B true TWI318793B (en) 2009-12-21

Family

ID=38986090

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095145951A TWI318793B (en) 2006-07-26 2006-12-08 Imroved sram device and operating metod

Country Status (3)

Country Link
US (1) US7420854B2 (zh)
CN (1) CN100580809C (zh)
TW (1) TWI318793B (zh)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4219663B2 (ja) * 2002-11-29 2009-02-04 株式会社ルネサステクノロジ 半導体記憶装置及び半導体集積回路
JP5415672B2 (ja) * 2006-12-19 2014-02-12 ルネサスエレクトロニクス株式会社 半導体装置
EP2254149B1 (en) * 2009-05-22 2014-08-06 Unisantis Electronics Singapore Pte. Ltd. SRAM using vertical transistors with a diffusion layer for reducing leakage currents
CN102280137B (zh) * 2010-06-08 2013-07-10 奇景光电股份有限公司 记忆体单元及相关记忆体装置
US8456910B2 (en) 2010-07-30 2013-06-04 Infineon Technologies Ag Nonvolatile memory cell with well extending under transistor and data storage capacitor of memory cell
US8422294B2 (en) 2010-10-08 2013-04-16 Infineon Technologies Ag Symmetric, differential nonvolatile memory cell
DE102011115339B4 (de) * 2010-10-08 2017-03-16 Infineon Technologies Ag Symmetrische differentielle nichtflüchtige Speicherzellen und Verfahren zum Schreiben eines Datenzustands in eine derartige Speicherzelle
US8625334B2 (en) * 2011-12-16 2014-01-07 Taiwan Semiconductor Manufacturing Company, Ltd. Memory cell
CN108665943B (zh) * 2018-05-04 2020-06-09 上海华力集成电路制造有限公司 一种静态随机存取存储器读取电流的测试方法
US11018142B2 (en) * 2018-07-16 2021-05-25 Taiwan Semiconductor Manufacturing Company, Ltd. Memory cell and method of manufacturing the same
US10727237B2 (en) * 2018-09-27 2020-07-28 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor structure

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6442060B1 (en) * 2000-05-09 2002-08-27 Monolithic System Technology, Inc. High-density ratio-independent four-transistor RAM cell fabricated with a conventional logic process
US6862207B2 (en) * 2002-10-15 2005-03-01 Intel Corporation Static random access memory
US6920061B2 (en) * 2003-08-27 2005-07-19 International Business Machines Corporation Loadless NMOS four transistor dynamic dual Vt SRAM cell

Also Published As

Publication number Publication date
CN100580809C (zh) 2010-01-13
CN101114518A (zh) 2008-01-30
US7420854B2 (en) 2008-09-02
US20080025109A1 (en) 2008-01-31
TW200807693A (en) 2008-02-01

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Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees