TWI318421B - Structure and method for improving carrier mobility of a channel - Google Patents

Structure and method for improving carrier mobility of a channel

Info

Publication number
TWI318421B
TWI318421B TW093103284A TW93103284A TWI318421B TW I318421 B TWI318421 B TW I318421B TW 093103284 A TW093103284 A TW 093103284A TW 93103284 A TW93103284 A TW 93103284A TW I318421 B TWI318421 B TW I318421B
Authority
TW
Taiwan
Prior art keywords
channel
carrier mobility
improving carrier
improving
mobility
Prior art date
Application number
TW093103284A
Other languages
English (en)
Other versions
TW200419659A (en
Inventor
Chien-Chao Huang
Chao-Hsiung Wang
Chung-Hu Ge
Wen-Chin Lee
Hu Chenming
Original Assignee
Taiwan Semiconductor Mfg
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Taiwan Semiconductor Mfg filed Critical Taiwan Semiconductor Mfg
Publication of TW200419659A publication Critical patent/TW200419659A/zh
Application granted granted Critical
Publication of TWI318421B publication Critical patent/TWI318421B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7842—Field effect transistors with field effect produced by an insulated gate means for exerting mechanical stress on the crystal lattice of the channel region, e.g. using a flexible substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/28008—Making conductor-insulator-semiconductor electrodes
    • H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H01L21/28026—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor
    • H01L21/2807—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the final conductor layer next to the insulator being Si or Ge or C and their alloys except Si
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
    • H01L29/7782—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with confinement of carriers by at least two heterojunctions, e.g. DHHEMT, quantum well HEMT, DHMODFET
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/933—Germanium or silicon or Ge-Si on III-V

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Thin Film Transistor (AREA)
TW093103284A 2003-02-13 2004-02-12 Structure and method for improving carrier mobility of a channel TWI318421B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US10/366,220 US6924181B2 (en) 2003-02-13 2003-02-13 Strained silicon layer semiconductor product employing strained insulator layer

Publications (2)

Publication Number Publication Date
TW200419659A TW200419659A (en) 2004-10-01
TWI318421B true TWI318421B (en) 2009-12-11

Family

ID=32849726

Family Applications (1)

Application Number Title Priority Date Filing Date
TW093103284A TWI318421B (en) 2003-02-13 2004-02-12 Structure and method for improving carrier mobility of a channel

Country Status (3)

Country Link
US (1) US6924181B2 (zh)
CN (1) CN1293646C (zh)
TW (1) TWI318421B (zh)

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US6967143B2 (en) * 2003-04-30 2005-11-22 Freescale Semiconductor, Inc. Semiconductor fabrication process with asymmetrical conductive spacers
US7078742B2 (en) 2003-07-25 2006-07-18 Taiwan Semiconductor Manufacturing Co., Ltd. Strained-channel semiconductor structure and method of fabricating the same
US6940705B2 (en) * 2003-07-25 2005-09-06 Taiwan Semiconductor Manufacturing Company, Ltd. Capacitor with enhanced performance and method of manufacture
US6936881B2 (en) * 2003-07-25 2005-08-30 Taiwan Semiconductor Manufacturing Company, Ltd. Capacitor that includes high permittivity capacitor dielectric
US7163867B2 (en) * 2003-07-28 2007-01-16 International Business Machines Corporation Method for slowing down dopant-enhanced diffusion in substrates and devices fabricated therefrom
US7112495B2 (en) * 2003-08-15 2006-09-26 Taiwan Semiconductor Manufacturing Company, Ltd. Structure and method of a strained channel transistor and a second semiconductor component in an integrated circuit
US7071052B2 (en) * 2003-08-18 2006-07-04 Taiwan Semiconductor Manufacturing Company, Ltd. Resistor with reduced leakage
US20050077574A1 (en) * 2003-10-08 2005-04-14 Chandra Mouli 1T/0C RAM cell with a wrapped-around gate device structure
US8008724B2 (en) * 2003-10-30 2011-08-30 International Business Machines Corporation Structure and method to enhance both nFET and pFET performance using different kinds of stressed layers
US7888201B2 (en) 2003-11-04 2011-02-15 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor-on-insulator SRAM configured using partially-depleted and fully-depleted transistors
US7119404B2 (en) * 2004-05-19 2006-10-10 Taiwan Semiconductor Manufacturing Co. Ltd. High performance strained channel MOSFETs by coupled stress effects
US7495266B2 (en) * 2004-06-16 2009-02-24 Massachusetts Institute Of Technology Strained silicon-on-silicon by wafer bonding and layer transfer
DE102004031710B4 (de) * 2004-06-30 2007-12-27 Advanced Micro Devices, Inc., Sunnyvale Verfahren zum Herstellen unterschiedlich verformter Halbleitergebiete und Transistorpaar in unterschiedlich verformten Halbleitergebieten
US7397087B2 (en) * 2004-08-06 2008-07-08 International Business Machines Corporation FEOL/MEOL metal resistor for high end CMOS
DE102004042167B4 (de) * 2004-08-31 2009-04-02 Advanced Micro Devices, Inc., Sunnyvale Verfahren zum Ausbilden einer Halbleiterstruktur, die Transistorelemente mit unterschiedlich verspannten Kanalgebieten umfasst, und entsprechende Halbleiterstruktur
US7323391B2 (en) * 2005-01-15 2008-01-29 Applied Materials, Inc. Substrate having silicon germanium material and stressed silicon nitride layer
US7442597B2 (en) * 2005-02-02 2008-10-28 Texas Instruments Incorporated Systems and methods that selectively modify liner induced stress
US8138104B2 (en) * 2005-05-26 2012-03-20 Applied Materials, Inc. Method to increase silicon nitride tensile stress using nitrogen plasma in-situ treatment and ex-situ UV cure
US7566655B2 (en) * 2005-05-26 2009-07-28 Applied Materials, Inc. Integration process for fabricating stressed transistor structure
US8129290B2 (en) 2005-05-26 2012-03-06 Applied Materials, Inc. Method to increase tensile stress of silicon nitride films using a post PECVD deposition UV cure
US7425740B2 (en) * 2005-10-07 2008-09-16 Taiwan Semiconductor Manufacturing Company, Ltd. Method and structure for a 1T-RAM bit cell and macro
US20070246776A1 (en) * 2006-04-20 2007-10-25 Synopsys, Inc. Stress engineering for cap layer induced stress
US7678636B2 (en) * 2006-06-29 2010-03-16 Taiwan Semiconductor Manufacturing Company, Ltd. Selective formation of stress memorization layer
US20080157292A1 (en) * 2006-12-29 2008-07-03 Texas Instruments Inc. High-stress liners for semiconductor fabrication
US8558278B2 (en) 2007-01-16 2013-10-15 Taiwan Semiconductor Manufacturing Company, Ltd. Strained transistor with optimized drive current and method of forming
US20080191285A1 (en) 2007-02-09 2008-08-14 Chih-Hsin Ko CMOS devices with schottky source and drain regions
US8466508B2 (en) * 2007-10-03 2013-06-18 Macronix International Co., Ltd. Non-volatile memory structure including stress material between stacked patterns
US7943961B2 (en) 2008-03-13 2011-05-17 Taiwan Semiconductor Manufacturing Company, Ltd. Strain bars in stressed layers of MOS devices
US7808051B2 (en) 2008-09-29 2010-10-05 Taiwan Semiconductor Manufacturing Company, Ltd. Standard cell without OD space effect in Y-direction
DE102009010883B4 (de) * 2009-02-27 2011-05-26 Amd Fab 36 Limited Liability Company & Co. Kg Einstellen eines nicht-Siliziumanteils in einer Halbleiterlegierung während der FET-Transistorherstellung mittels eines Zwischenoxidationsprozesses
US8236709B2 (en) 2009-07-29 2012-08-07 International Business Machines Corporation Method of fabricating a device using low temperature anneal processes, a device and design structure
CN102110710A (zh) * 2009-12-23 2011-06-29 中国科学院微电子研究所 形成有沟道应力层的半导体结构及其形成方法
US8883598B2 (en) * 2012-03-05 2014-11-11 Taiwan Semiconductor Manufacturing Co., Ltd. Thin capped channel layers of semiconductor devices and methods of forming the same
US9018108B2 (en) 2013-01-25 2015-04-28 Applied Materials, Inc. Low shrinkage dielectric films
US10084063B2 (en) * 2014-06-23 2018-09-25 Taiwan Semiconductor Manufacturing Company Ltd. Semiconductor device and manufacturing method thereof

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US5534713A (en) * 1994-05-20 1996-07-09 International Business Machines Corporation Complementary metal-oxide semiconductor transistor logic using strained SI/SIGE heterostructure layers
US5633202A (en) * 1994-09-30 1997-05-27 Intel Corporation High tensile nitride layer
JPH08321612A (ja) * 1995-05-26 1996-12-03 Ricoh Co Ltd 半導体装置及びその製造方法
JPH10144919A (ja) * 1996-11-14 1998-05-29 Denso Corp Ｍｉｓトランジスタの製造方法
US5963817A (en) * 1997-10-16 1999-10-05 International Business Machines Corporation Bulk and strained silicon on insulator using local selective oxidation
JPH11274315A (ja) * 1998-03-19 1999-10-08 Hitachi Ltd 半導体装置
US6690043B1 (en) * 1999-11-26 2004-02-10 Kabushiki Kaisha Toshiba Semiconductor device and method of manufacturing the same
JP2002198368A (ja) * 2000-12-26 2002-07-12 Nec Corp 半導体装置の製造方法
WO2002052652A1 (fr) * 2000-12-26 2002-07-04 Matsushita Electric Industrial Co., Ltd. Composant a semi-conducteur et son procede de fabrication
US20020168802A1 (en) * 2001-05-14 2002-11-14 Hsu Sheng Teng SiGe/SOI CMOS and method of making the same
US20020167048A1 (en) * 2001-05-14 2002-11-14 Tweet Douglas J. Enhanced mobility NMOS and PMOS transistors using strained Si/SiGe layers on silicon-on-insulator substrates
US6730551B2 (en) * 2001-08-06 2004-05-04 Massachusetts Institute Of Technology Formation of planar strained layers

Also Published As

Publication number Publication date
CN1525574A (zh) 2004-09-01
TW200419659A (en) 2004-10-01
CN1293646C (zh) 2007-01-03
US6924181B2 (en) 2005-08-02
US20040159834A1 (en) 2004-08-19

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