TWI315715B - Method of forming 3d high aspect ratio micro structures - Google Patents

Method of forming 3d high aspect ratio micro structures

Info

Publication number
TWI315715B
TWI315715B TW096109828A TW96109828A TWI315715B TW I315715 B TWI315715 B TW I315715B TW 096109828 A TW096109828 A TW 096109828A TW 96109828 A TW96109828 A TW 96109828A TW I315715 B TWI315715 B TW I315715B
Authority
TW
Taiwan
Prior art keywords
forming
aspect ratio
high aspect
micro structures
ratio micro
Prior art date
Application number
TW096109828A
Other languages
English (en)
Other versions
TW200838794A (en
Inventor
Chien-Chung Fu
Heng-Chi Huang
Wen-Cheng Yang
Original Assignee
Nat Univ Tsing Hua
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nat Univ Tsing Hua filed Critical Nat Univ Tsing Hua
Priority to TW096109828A priority Critical patent/TWI315715B/zh
Priority to US12/007,018 priority patent/US7947430B2/en
Publication of TW200838794A publication Critical patent/TW200838794A/zh
Application granted granted Critical
Publication of TWI315715B publication Critical patent/TWI315715B/zh

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2022—Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure
    • G03F7/2032—Simultaneous exposure of the front side and the backside
TW096109828A 2007-03-22 2007-03-22 Method of forming 3d high aspect ratio micro structures TWI315715B (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
TW096109828A TWI315715B (en) 2007-03-22 2007-03-22 Method of forming 3d high aspect ratio micro structures
US12/007,018 US7947430B2 (en) 2007-03-22 2008-01-04 Method of forming 3D micro structures with high aspect ratios

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW096109828A TWI315715B (en) 2007-03-22 2007-03-22 Method of forming 3d high aspect ratio micro structures

Publications (2)

Publication Number Publication Date
TW200838794A TW200838794A (en) 2008-10-01
TWI315715B true TWI315715B (en) 2009-10-11

Family

ID=39775103

Family Applications (1)

Application Number Title Priority Date Filing Date
TW096109828A TWI315715B (en) 2007-03-22 2007-03-22 Method of forming 3d high aspect ratio micro structures

Country Status (2)

Country Link
US (1) US7947430B2 (zh)
TW (1) TWI315715B (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI647171B (zh) * 2015-09-08 2019-01-11 國立臺灣科技大學 微針陣列的製作方法

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2010049813A1 (en) * 2008-10-29 2010-05-06 Uti Limited Partnership Integrated encapsulation for mems devices
WO2010099220A2 (en) 2009-02-25 2010-09-02 California Institute Of Technology Methods for fabricating high aspect ratio probes and deforming high aspect ratio nanopillars and micropillars
WO2010151604A2 (en) 2009-06-26 2010-12-29 California Institute Of Technology Methods for fabricating passivated silicon nanowires and devices thus obtained
WO2011063163A2 (en) * 2009-11-19 2011-05-26 California Institute Of Technology Methods for fabricating self-aligning arrangements on semiconductors
US9018684B2 (en) 2009-11-23 2015-04-28 California Institute Of Technology Chemical sensing and/or measuring devices and methods
CN101829394B (zh) * 2010-04-27 2012-08-22 上海交通大学 台阶微针阵列的制备方法
CN102502474A (zh) * 2011-11-10 2012-06-20 无锡英普林纳米科技有限公司 非平面微米和亚微米微针阵列及其制备方法
CN106733573B (zh) * 2016-12-15 2019-10-15 南京大学 一种三维宽带能量聚焦装置
CN117293153A (zh) 2018-07-13 2023-12-26 蓝枪半导体有限责任公司 半导体结构及其制造方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004255680A (ja) 2003-02-25 2004-09-16 Matsushita Electric Works Ltd 微細金型及びその製造方法
JP4277824B2 (ja) 2005-05-26 2009-06-10 三菱電機株式会社 エレベータシステム
TWI288116B (en) 2005-06-07 2007-10-11 Chien-Chung Fu Method of manufacturing a LIGA mold by backside exposure
TW200710018A (en) 2005-08-30 2007-03-16 Hitachi Maxell Microlens array substrate and method of manufacturing microlens array substrate
TWI271787B (en) 2005-09-23 2007-01-21 Univ Nat Chunghsing 3-dimensional hexagon micro structure and process of manufacturing the same

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI647171B (zh) * 2015-09-08 2019-01-11 國立臺灣科技大學 微針陣列的製作方法

Also Published As

Publication number Publication date
TW200838794A (en) 2008-10-01
US7947430B2 (en) 2011-05-24
US20080233522A1 (en) 2008-09-25

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