TWI315089B - Wire-bonding method for wire-bonding apparatus - Google Patents

Description

•1315089

<CONFIDENTIAL IX. OBJECTS OF THE INVENTION: TECHNICAL FIELD OF THE INVENTION The present invention relates to a method of wire-bonding machine-related at least _(four) heads, and in particular, the inner wafers are simultaneously wired. Different areas on the earth plate [Prior Art] At present, in the semiconductor industry, the requirements for _, miniaturization, and component density are gradually being improved by the package structure and technology, and the domain = = = ^ is also constantly being promoted. The trend of θ exhibition softness and preparation efficiency is often used in the current packaging process, which is often called the production line. Therefore, it is currently working on a single production line with a degree of wire drawing machine. On the substrate, it is only possible to expand the production line for a while. The light proportion cannot be significantly changed. [Invention] In view of the above, the _ wire-laying method of the present invention can perform wire-drawing operations at the same time in at least two fields of providing a wire-bonding machine, and can be r-head + simultaneously in a single Increasing the efficiency of the wire bonding operation in the same unit time on different areas on the substrate, in accordance with the purpose of the present invention, two degrees: unit throughput. A method of threading a wire machine. 6, 1315089

The 'CONFIDENTIAL' wire splicing machine includes at least a first wire splicing head and a second wire splicing head, wherein the first wire splicing head and the second wire splicing head are used for a plurality of first chips and at least one of the first regions on a substrate A plurality of second wafers in the two regions are simultaneously wired. The method of wire bonding includes: firstly, obtaining a starting positioning coordinate of the first area and the second area; and then determining whether a distance between the first area and the second area is greater than a set spacing; when the distance between the first area and the second area is greater than When the pitch is set, the first wire bonding head and the second wire bonding head respectively wire the first wafer and the second wafer; when the distance between the first region and the second region is small, the second wire bonding head is away from the first The first wafer and the third wafer are simultaneously wired to the first wafer and the third wafer, respectively. The above described objects, features, and advantages of the present invention will become more apparent and understood. , which shows a schematic diagram of the first type of wire head and the wafer on the substrate. The wire bonding machine used in the present invention includes at least a first wire bonding head 210 and a second wire bonding head 220. The first wire bonding head 210 and the second wire bonding head 220 are used to face at least a plurality of first regions 110 on the substrate 100. A wafer 112, and a plurality of second wafers 122 in the second region 120 are simultaneously wired. The first region 110, the second region 120, and the third region 130 in Fig. 1 are different columns on the substrate 100. The first wafer 112, the second wafer 122, and the third wafer 132 are arranged in a line in the first region 110, 7'1315089, respectively.

'CONFIDENTIAL 桊 • In the second area 120 and the third area 130. A spacing D1 is maintained between each of the first wafer 112, the second wafer 122, and the third wafer 132. Please refer to FIG. 2, which shows a flow chart of the wire bonding method of the present invention. Please also refer to Figure 1 at the same time. First, as shown in step 201, the initial positioning coordinates of the first region 110 and the second region 120 are obtained. Next, as shown in step 202, the wire bonding machine further includes a processing unit, and the processing unit determines the distance between the first region 110 and the second region 120, that is, whether the distance D1 between the first wafer 112 and the second wafer 122 is &gt; Greater than a set spacing. This step is to ensure a safe distance between the first wire head 210 and the second wire head 220 to avoid collision during the wire bonding process. When the distance between the first region 110 and the second region 120 is less than the set pitch, that is, when the distance D1 between the first wafer 112 and the second wafer 122 is less than the set interval, as shown in step 203, the second wire head 220 is away from the first wire. The head 210 is moved over a third region 130 of the substrate 100 having a plurality of third wafers 132 therein. Then, as shown in step 204, the processing unit sends a positioning signal to the first wire bonding head 210 and the second wire bonding head 220 respectively, so that the first wire bonding head 210 and the second wire bonding head 220 respectively align the first region 110 and The starting position of the third region 130. Next, as shown in step 205, the first wire bonding head 210 and the second wire bonding head 220 respectively wire the first wafer 112 and the third wafer 132. In step 202, when the distance D1 between the first region 110 and the second region 120 is greater than the set pitch, that is, the first wafer 112 and the second wafer 8 4315089

If the distance between the CONFIDENTIAL 122 and the D1 is greater than the set interval, then jump directly to step 204. The processing unit sends a positioning signal to the first wire bonding head 210 and the second wire bonding head 220 respectively, so that the first wire bonding head 21〇 and the second wire bonding head 220 respectively align the starting positions of the first region 110 and the second region 120. . Then, as shown in step 205, the first wire bonding head 210 and the second wire bonding head 220 simultaneously wire the first wafer 112 and the second wafer 122, respectively.

However, those skilled in the art to which the present invention pertains, it is to be understood that the technique of the present invention is not limited to this, as shown in Fig. 3, which is a schematic view of a second type of wire bonding head and a wafer on a substrate. The first region 11a, the second region 120a, and the third region 130a are different rows arranged on the substrate 10a, and the first wafer 112a, the second wafer 122a, and the third wafer 132a are respectively arranged in a line. The first region 110a, the second region 120a, and the third region 130a. Each of the first wafer U2a, the second wafer 122a, and the third wafer 132a maintains a pitch D2. Therefore, the above-mentioned wire bonding method can also be applied to the wafer arrangement mode. The processing unit of the wire bonding machine determines whether the spacing D2 is greater than a set spacing, and determines whether the second wire bonding head 21 is to move to the next region, for example, Three districts. When it is determined that the first wire head 210 and the second wire head 220 are held at a safe distance, the wire bonding operation is simultaneously performed in different regions. As shown in Fig. 4, a schematic view of the third type of wire head and the wafer on the substrate is shown. The substrate has a first region, a second region 120b, a first region 130b, and a fourth region 14b. Each of the regions has a first wafer lm, a second wafer 12%, a third wafer 132b, and a fourth wafer 142b arranged in a 4X4 array. In addition, the wafers in each work area are respectively 9 • 1315089

CONFIDENTIAL maintains a distance D 3 from the wafers in other work areas. Therefore, the above-described wire bonding method can also be used in the form of arrays of wafers, and the number of wafers in each array is not necessarily the same. When the processing unit determines that the inter-wafer distance D3 is less than the set spacing, so that the first wire-punching head 210 and the second wire-punching head 220 have a collision, the second wire-punching head 220 is moved away from the first wire-punching head 210 to other regions. When it is determined that the safety is intact, the first wire head 210 and the second wire head 220 are simultaneously wired. In addition, the wire bonding machine may further include a database for storing operating parameter data. The operational parameter data includes the wafer arrangement, wafer count, wafer size, and initial positioning coordinates for each region. In addition, the set spacing can also be stored in the data base for the processing unit to determine whether the distance between the first wire head 210 and the second wire head 220 is safe. Further, the present embodiment is not limited to the simultaneous operation of the wire by only two wire heads, and the shape of the work area and the number of wafers inside are not limited. As long as there are more than two wire ends, simultaneous wire bonding in different regions on a substrate is within the scope of the present invention. The wire bonding method of the wire bonding machine disclosed in the above embodiments of the present invention is to simultaneously wire the wafers in different areas on a substrate at the same time by at least two wire heads, thereby greatly improving the efficiency of the wire bonding operation on a single production line, so that the same The unit output of the product increased per unit time. The wire-bonding machine can separate the wire-punching heads of different working areas at the same time to avoid collisions. In view of the above, the present invention has been disclosed in a preferred embodiment, and is not intended to limit the present invention. The invention belongs to the technical field of the invention -1315089

CONFIDENTIAL • A person skilled in the art can make various changes and refinements without departing from the spirit and scope of the present invention. Therefore, the scope of the invention is defined by the scope of the appended claims.

11 • 1315089

'CONFIDENTIAL' is a schematic diagram of the first type of wire bonding head and the wafer on the substrate; FIG. 2 is a flow chart of the wire bonding method of the present invention; And a schematic view of the wafer on the substrate; and FIG. 4 is a schematic view of the third wire bonding head and the wafer on the substrate. [Main component symbol description]

100, 100a, 100b substrate 110, 110a, 110b first region 112, 112a, 112b mm 1 - wafer 120, 120a &gt; 120b second region 122, 122a, 122b first wafer 130, 130a, 130b third region 132, 132a, 132b third wafer 140b: fourth region 142b • fourth wafer 210: first wire bonding head 220: second wire bonding head 12

Claims (1)

• 1315089 ' CONFIDENTIAL X. Patent application scope: 1. - The wire bonding machine's wire bonding method 'The wire bonding machine includes at least a - a first wire head and a second wire head, the first wire hitting head and the second wire head And the plurality of second-day wafers in the second region of the second substrate are simultaneously wired on the substrate, and the method includes: (a) obtaining the first- The area and the start of the second zone, the coordinates; (b) determine whether the distance between the first zone and the second zone is greater than - Setting a pitch; and (c) when the distance between the first region and the second region is greater than the set spacing, the first wire bonding head and the second wire bonding head simultaneously respectively for the first wafer and the second wafers Performing a wire bonding; when the distance between the first region and the second region is less than the set spacing, the second wire head is away from the first wire head and moves to a third region of the substrate having a plurality of third wafers The first and third wafers are wired when the first and the second taps are separated. 2. If the application of the patent scope (the item of the ice line machine further includes a processing unit, step /, .. do not issue - positioning signal to the first line, the processing unit is divided into the first line and the second线线. The u-line head 'aligns the start of the second area/third area with the first area and the first method of the first crystal, as described in the first item, wherein the second brother is The second wafer and the 4b are arranged on the same line. The argon chip is respectively arranged at 13 1315089 CONFIDENTIAL 4. The wire bonding method according to claim 1, wherein the first wafer, the first wafer The second wafer and the third wafer are respectively arranged in an array. 5. The wire bonding method according to claim 1, wherein the wire bonding machine further comprises a database for storing operating parameter data. The wire bonding method of claim 5, wherein the operation parameter data comprises a wafer arrangement, a wafer number 1, a wafer size, and a starting positioning coordinate of each region.