TWI313679B - Mixture of oligomeric phenazinium compounds and acid bath for electrolytically depositing a copper deposit - Google Patents

Mixture of oligomeric phenazinium compounds and acid bath for electrolytically depositing a copper deposit Download PDF

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TWI313679B
TWI313679B TW092135371A TW92135371A TWI313679B TW I313679 B TWI313679 B TW I313679B TW 092135371 A TW092135371 A TW 092135371A TW 92135371 A TW92135371 A TW 92135371A TW I313679 B TWI313679 B TW I313679B
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mixture
compound
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TW200508209A (en
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Heiko Brunner
Wolfgang Dahms
Thomas Moritz
Udo Grieser
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Atotech Deutschland Gmbh
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    • CCHEMISTRY; METALLURGY
    • C07ORGANIC CHEMISTRY
    • C07DHETEROCYCLIC COMPOUNDS
    • C07D241/00Heterocyclic compounds containing 1,4-diazine or hydrogenated 1,4-diazine rings
    • C07D241/36Heterocyclic compounds containing 1,4-diazine or hydrogenated 1,4-diazine rings condensed with carbocyclic rings or ring systems
    • C07D241/38Heterocyclic compounds containing 1,4-diazine or hydrogenated 1,4-diazine rings condensed with carbocyclic rings or ring systems with only hydrogen or carbon atoms directly attached to the ring nitrogen atoms
    • C07D241/46Phenazines
    • CCHEMISTRY; METALLURGY
    • C25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25DPROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D3/00Electroplating: Baths therefor
    • C25D3/02Electroplating: Baths therefor from solutions
    • C25D3/38Electroplating: Baths therefor from solutions of copper
    • CCHEMISTRY; METALLURGY
    • C25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25DPROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D7/00Electroplating characterised by the article coated
    • C25D7/12Semiconductors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/288Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
    • H01L21/2885Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition using an external electrical current, i.e. electro-deposition
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/40Forming printed elements for providing electric connections to or between printed circuits
    • H05K3/42Plated through-holes or plated via connections
    • H05K3/423Plated through-holes or plated via connections characterised by electroplating method

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Electroplating And Plating Baths Therefor (AREA)
  • Electrolytic Production Of Metals (AREA)
  • Heterocyclic Carbon Compounds Containing A Hetero Ring Having Nitrogen And Oxygen As The Only Ring Hetero Atoms (AREA)
  • Electroplating Methods And Accessories (AREA)
  • Printing Elements For Providing Electric Connections Between Printed Circuits (AREA)
  • Low-Molecular Organic Synthesis Reactions Using Catalysts (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
  • Macromolecular Compounds Obtained By Forming Nitrogen-Containing Linkages In General (AREA)

Abstract

Mixture of oligomeric phenazinium compounds contains phenazinium compound(s) selected from compounds (I) with 2 monomer units (A), which are linked through positions 1-4 or 5-8 and optionally have different substituents, compounds (II) with 3 monomer units of this type and other oligomeric phenazinium compounds, with a total of not less than 80 mole-% (I) and (II). Mixture of oligomeric phenazinium compounds contains phenazinium compound(s) selected from compounds (I) with 2 monomer units of formula (A), optionally with different substituents, compounds (II) with 3 monomer units of this type and other oligomeric phenazinium compounds, with a total of not less than 80 mole-% (I) and (II): N(R5)CC(R4)C(R3) = a group of formula (IIIa) or (IIIb); R1-9 = H, halogen, amino, OH, CN, SCN, SH, COOH, COO-salt, COO-ester, SO3H, SO3-salt, SO3-ester or lower alkyl(hetero)aryl; or R1-4, R6-9 = a single bond connecting individual monomer units; or R2, R3 may = oxo, imino or methylene if (A) contains a (IIIb) unit; NCC(R1)C(R2) = a group of formula (IVa) or (IVb); A- = an acid anion Independent claims are also included for the following: (1) preparation of the mixture; (2) acid copper electroplating bath containing the mixture.

Description

1313679 玖、發明說明: L發明戶斤屬之技術領域3 本發明係關於一低聚吩嗉正離子化合物之混合物 以及製備此類混合物之方法。本發明進一步關於一用以 5 電解沉積出一含有該低聚吩嗉正離子化合物之銅沉積 物之酸浴以及一使用該酸浴來電解沉積出一銅沉積物 之方法。為製造出裝飾性表面,本發明的混合物可以作 為一種成分而被用於銅鍍浴中來更特別地形成高度明 亮與均一的銅沉積物。該混合物可進而作為一種成分而 10 被用於銅鍍浴中來選擇性地與完全地與銅填充至印刷 電路板的盲微孔。在製造積體電路時,該混合物亦可進 一步地作為一種成分而被用於銅鍍浴來將銅沉積物至 被提供以凹槽(溝槽與導孔)之半導體基材表面上以用於 選擇性地與完全地填充至印刷電路板内的盲微孔,而使 15 半導體基材表面完全地被銅所均勻塗佈。 I:先前技術3 發明背景 為沉積出明亮銅層來取代結晶形無光澤沉積物,有 機添加物經常以小數量的被添加至大多數的酸性銅鍵 20 電解液内。在此一方法中,一添加化合物或是諸如由聚 乙二醇、硫脲與其衍生物、乙内醯硫脲、硫胺基甲酸酯 以及硫代硫酸酯中之數個添加化合物所構成的一組成 物常被用來添加。現今,無論如何,因其所獲得的銅鍍 層品質絕無法符合今日設備的事實,所提及的添加物已 25 不再具有意義。因此獲得的塗層,若不是容易受損就是 1313679 存在有粗劣的光澤與不足的均勻度。 某些用於製造出明亮銅層之藏紅與其衍生物早已 常為人所知,就所使用的藏紅,根據DE-PS 947656作為 唯一添加物者,例如二甲基藏紅偶氮二甲基苯胺、二乙 5 基藏紅偶氮二曱基苯胺、煙魯灰以及藏紅偶氮酚。更為 所知的是,該添加物亦可組合以其他添加物來使用。 DE-AS 1 004 880暗示二乙基曱苯藏紅偶氮二甲基 苯胺、甲苯藏紅偶氮酚、甲苯藏紅偶氮萘酚或二甲基曱 苯藏紅偶氮二乙基笨胺或者其為酚併藏紅、甲苯藏紅、 10 品紅、紫石英、苯胺紫、二乙基甲苯藏紅或二甲基甲苯 藏紅與硫脲以及硫脲之衍生物係用於沉積出明亮與均 勻的銅塗層。對應於JP 60-056086 A的日本專利摘要係 關於吩嗉染料與單硫化物或二硫化物,諸如3-鈉-磺丙基 二硫化物以及貳-3-鈉-磺丙基二硫化物,以及聚醚之組 15 合,以用於沉積出高度明亮、均一、易延展的銅層。於 DE-PS 947 656, DE-AS 1 004 880 以及對應於 JP 60-056086 A的日本專利摘要所做出的暗示是,不論如 何,結果所得的銅層具有不令人滿意的性質。 進一步地,使用硫脲-甲醛縮合物來作為一種用於 20 一酸性銅鍍浴中之添加物已被說明:DE-AS 1 152 863 描述硫脲-曱醛之預縮合物,以用作為酸浴中的唯一均 勻劑來使用。被包含在所述酸浴中之基礎光澤劑係為二 硫胺基甲酸一類之衍生物。DE-AS 1 165 962描述預縮 合產物之使用,該產物係由硫脲、曱醛以及一於酸浴中 25 具有至少兩個NH2基團之化合物所構成,以用於製造出 1313679 均一的銅塗層。該酸浴進一步含有基礎光澤劑。 DE-AS 1 218 247揭示一酸性電解銅浴以用來製造 出含有化合物之高度明亮、均一的銅塗層,該化合物幾 乎難溶於水並且被包含在硫代羰基基團與芳基或芳烷 5 基基團之分子内[在一 1 : 1之比率下],該二種基團係藉 由相互鍵結之雜原子或一環系所形成之化合物而被予 以分開。範例係有硫半縮合二胺基脲的芳族N-單一取代 產物,進一步為芳族醛之硫半縮合二胺基脲、硫碳醯肼 之衍生物、硫碳醯肼之衍生物;具有硫羰基團、單-與 10 聚硫化雙曱基羰醯胺、單-與聚硫化二黃原酸,以及肼 二硫碳醯胺。這些化合物可一起與具有通式 RR'N-CS-S-(CH2)n-SOx-R”之颯與亞颯衍生物一同使 用。 雖然揭示於DE-AS 1 152 863、DE-AS 1 165 962 以 15 及DE-AS 1 218 247之衍生物亦容許去實現明亮的銅表 面,然因它們粗劣的均勻品質而使他們在實務上敗於無 法符合今日之需求。 再者,具有有機硫化合物之聚乙二醇亞胺係為已 知:DE-AS 1 246 347揭示的一或數個直鏈的或分枝的 20 聚乙二醇亞胺或其功能性衍生物係有助益於製造出明 亮、均一與具裝飾性吸引力的銅塗層,又,所具之亮度 在一被予以擴大的電流密度範圍内亦可被予以達成。這 些物質可連同其他的現今光澤劑和/或潤溼劑來用於酸 浴中。 25 甚者,QE-AS 1 521 062暗示含有機硫化物(包含至 1313679 y v'酸基團)之酸浴組成物,其係被混合至或化學性 地鍵結至-聚趟,該聚趟包含至少三個,較佳為六個氧 原子之聚酯並且為具有多於六個c_原子之不具自由型 脂族烴鏈。這些酸浴容許有平穩、明亮與易延展的銅層 5 之沉積物。所述之較佳聚醚係為具有一分子量至少為 296,更佳地為至少5000213二氧戊環聚合產物。吩嗉 染料亦可以組合以所述的酸浴添加物而被使用,例如二 乙基酚併藏紅偶氮二曱基苯胺、二甲基酚併藏紅偶氮二 曱基苯胺、二乙基酚併藏紅偶氮苯酚以及二甲基偶氮 10 -(2-羥基乙胺基-5-甲基)-苯。該吩嗉染料容許高度均 一與一廣範圍之明亮沉積物。 就被描述於DE-AS 1 246 347 與 DE-AS 1 521 062 之銅電解質而言,它還是不可能提供予一足夠高的陰極 電流密度。再者,在被引至入一中間介質處理之後,所 15 沉積出的銅表面僅能被予以鍍鎳。 另,美國專利第4,551,212號揭示煙魯綠B或煙魯 黑R與藏紅T之一組合,以用於沉積出在微米範圍下 可被加工的銅層。這些銅層係根據晶粒尺寸與硬度而被 予以最佳化。除了所述之吩嗔染料之外,鍍浴中可進一 20 步包含一濕潤劑以及諸如二-(3-硫代丙基二硫化物)二 鈉鹽之應力消除劑。 此外,經羥基化的與經鹵化的藏紅染料之使用已被 描述在對應於JP 60-056086 A專利號之日本專利摘要 中。 25 如同其他在此所提及之文獻所述,於美國專利第 Q 135371號專利申請案說明書修正頁 98.03.23 p年}月十修 3b眢换頁 Τ351,212號與對應於jp 60-056086 A專利號之曰本專利 摘要中所揭示的衍生物僅有產生出表現粗劣光彩與均 勻度之結果。 DE-AS 20 28 803與DE-AS 2 039 831 描述首次使用 具有下列化學通式<A>之吩嗉化合物: / 〆 6 R8、VR R71313679 玖, DESCRIPTION OF THE INVENTION: FIELD OF THE INVENTION The present invention relates to a mixture of an oligomeric phenanthrene cation compound and a process for preparing such a mixture. The invention further relates to an acid bath for electrolytically depositing a copper deposit containing the oligomeric ruthenium cation compound and a method of electrolytically depositing a copper deposit using the acid bath. To produce a decorative surface, the mixture of the present invention can be used as a component in a copper plating bath to more particularly form highly bright and uniform copper deposits. The mixture can in turn be used as a component 10 in a copper plating bath to selectively and completely fill the blind microvias of the printed circuit board with copper. In the fabrication of the integrated circuit, the mixture may further be used as a component in a copper plating bath to deposit copper onto the surface of the semiconductor substrate provided with grooves (grooves and vias) for use in The blind microvias are selectively and completely filled into the printed circuit board such that the surface of the 15 semiconductor substrate is completely uniformly coated by copper. I: Prior Art 3 Background of the Invention In order to deposit a bright copper layer instead of a crystalline matte deposit, organic additives are often added to most of the acidic copper bond 20 electrolyte in small amounts. In this method, an additive compound or a compound such as polyethylene glycol, thiourea and its derivatives, ethyl thiourea, thiourethane, and thiosulfate A composition is often used to add. Nowadays, in any case, because of the fact that the quality of the copper plating obtained can not meet the requirements of today's equipment, the additives mentioned are no longer meaningful. The coating thus obtained, if not easily damaged, is 1313679 with poor gloss and insufficient uniformity. Some of the saffron and its derivatives used to make bright copper layers have long been known, as for the saffron used, according to DE-PS 947656 as the only additive, such as dimethyl sulphur azo Alkyl aniline, diethyl 5-based sulphur azobisindenyl aniline, sulphur ash and saffron azophenol. More specifically, the additive can also be used in combination with other additives. DE-AS 1 004 880 implies diethyl indane red azo dimethyl aniline, toluene sulphur azophenol, toluene sulphur azo naphthol or dimethyl benzene sulphur azodiethyl sulfonamide Or it is a phenol red, red toluene, 10 magenta, amethyst, aniline violet, diethyltoluene or dimethyltoluene and thiourea and thiourea derivatives for bright deposition With a uniform copper coating. Japanese Patent Abstract corresponding to JP 60-056086 A relates to a styrene dye and a monosulfide or a disulfide such as 3-sodium-sulfopropyl disulfide and indole-3-sodium-sulfopropyl disulfide. And a combination of polyethers 15 for depositing a highly bright, uniform, ductile copper layer. The implication made in DE-PS 947 656, DE-AS 1 004 880 and the Japanese patent abstract corresponding to JP 60-056086 A is that, in any case, the resulting copper layer has unsatisfactory properties. Further, the use of a thiourea-formaldehyde condensate as an additive for a 20-acid copper plating bath has been described: DE-AS 1 152 863 describes a thiourea-furfural precondensate for use as an acid The only homogeneous agent in the bath to use. The base glossing agent contained in the acid bath is a derivative of dithiocarbamic acid. DE-AS 1 165 962 describes the use of a precondensation product consisting of thiourea, furfural and a compound having at least two NH2 groups in an acid bath 25 for the production of 1313679 uniform copper. coating. The acid bath further contains a base gloss. DE-AS 1 218 247 discloses an acidic electrolytic copper bath for producing a highly bright, uniform copper coating containing a compound which is hardly soluble in water and which is contained in a thiocarbonyl group and an aryl or aromatic group. Intramolecular [at a ratio of 1:1] of the alk 5 group, the two groups are separated by a compound formed by a hetero atom or a ring system bonded to each other. Examples are aromatic N-single substituted products of sulfur semi-condensed diamine urea, further sulfur monocondensed diamine ureas of aromatic aldehydes, derivatives of thiocarbons, derivatives of thiocarboquinone; Thiocarbonyl groups, mono- and 10-poly bis-indenyl carbonyl decylamine, mono- and polysulfuric acid, and quinone dithiocarbammine. These compounds can be used together with an anthracene derivative having the general formula RR'N-CS-S-(CH2)n-SOx-R". Although disclosed in DE-AS 1 152 863, DE-AS 1 165 962 Derivatives of 15 and DE-AS 1 218 247 are also allowed to achieve bright copper surfaces, but because of their poor uniform quality, they are practically unsatisfactory to meet today's needs. Furthermore, with organic sulfur compounds Polyethylene glycol imine is known as: one or several linear or branched 20 polyethylene glycol imines disclosed in DE-AS 1 246 347 or functional derivatives thereof which contribute to the manufacture Bright, uniform and decorative copper coatings are available, and the brightness can be achieved in an extended current density range. These materials can be combined with other current glosses and/or moisturizers. The aerosol is used in an acid bath. 25 Moreover, QE-AS 1 521 062 implies an acid bath composition containing organic sulfides (containing to 1313679 y v' acid groups) which are mixed or chemically Bonded to a polyfluorene comprising at least three, preferably six, oxygen atoms and having a poly The six c_atoms do not have a free aliphatic hydrocarbon chain. These acid baths allow for a deposit of a smooth, bright and ductile copper layer 5. The preferred polyether has a molecular weight of at least 296, more Preferably, it is at least 5000213 dioxolane polymerization product. The phenanthrene dye can also be used in combination with the acid bath additive, such as diethyl phenol and red azobisnonyl aniline, dimethyl phenol. Red azobisnonyl aniline, diethyl phenol and red azophenol, and dimethylazo 10-(2-hydroxyethylamino-5-methyl)-benzene. The phthalocyanine dye allows for high uniformity. With a wide range of bright deposits, it is still not possible to provide a sufficiently high cathode current density for the copper electrolyte described in DE-AS 1 246 347 and DE-AS 1 521 062. After being introduced into an intermediate medium, the copper surface deposited by 15 can only be nickel plated. In addition, U.S. Patent No. 4,551,212 discloses the combination of Yanlu Green B or Yanlu Black R and Tibetan Red T. For depositing copper layers that can be processed in the micrometer range. These copper layers are based on the grain size It is optimized in terms of hardness and hardness. In addition to the above-mentioned command dye, a 20-step humectant and a disodium salt such as bis-(3-thiopropyl disulfide) may be contained in the plating bath. Further, the use of a hydroxylated and halogenated saffron dye has been described in Japanese Patent Abstract corresponding to the JP 60-056086 A patent number. 25 As described in other documents mentioned herein In U.S. Patent No. Q 135371, the patent application specification revision page is 98.03.23 p year} month ten repair 3b 眢 page Τ 351,212 and the corresponding patent number disclosed in the patent number corresponding to jp 60-056086 A patent number. Derivatives only produce the result of poor brilliance and uniformity. DE-AS 20 28 803 and DE-AS 2 039 831 describe the first use of a compound having the following chemical formula <A>: / 〆 6 R8, VR R7

其中R、R2、R3、R4、R5、R6、r7、r%r9係為相 同或不同,並且為氫、低級烷、或可能為甲基、乙基、 被甲氧基或乙氧基所取代之芳基,以及R5與R8係進一步 代表單一或聚合的吩嗉正離子,A-係為一酸基以及n 10 係為一2至100之整數。根據DE-AS 2039831,用來製備 這些化合物之起始物係為一硫酸胺,例如2_甲基_3_胺基 -6-二曱基-胺基-9·苯基-吩嗉正離子硫酸鹽。在使用亞硝 基硫酸與亞硝酸下,該硫酸胺係與硫酸在_5°C下被重氣 化。在該亞硝酸被破壞後,反應溶液被加熱至2〇°c。接 15 著,反應混合物以一驗被予以中和。 原則上,在一酸銅鍍電解液中使用這些化合物而有 明亮的與均一的銅層之沉積是可能的。無論如何,它們 仍導致了銅鍍操作時的非常不穩定結果。 【發明内容3 9 1313679 發明概要 因此’本發明的一基本目的是在防止已知銅浴的上 述缺點。 本發明更特別的一目的是在尋求添加物,藉由此一 5 手段而讓特別一致的與有光澤的,意指高度明亮的,以 及均一與易延展的銅鍍層可再現地被予以製造出來。 本發明之一進一步目的是在使高度明亮、均一以及 易延展的銅層應用於一相當高的電流密度。 本發明的另一目的是在尋求此類銅鍍浴之一組成 1〇物,也就是不斷地允許在一長時間鍍浴操作的期間内能 獲得具有所要求性質之銅層。 針對先前問題而被概述於此處的解決之道是在提 供如申請專利範圍第〗項之低聚吩嗉正離子化合物之混 合物;如申請專利範圍第15項之方法是在用以製備化合 15物之該混合物;如申請專利範圍第22項之用於電解沉積 一銅沉積物之酸浴,其係包含有本發明之低聚吩嗉正離 子化合物之混合物;以及如申請專利範圍第26項之電解 沉積一銅沉積物之方法,其係使用一包含有該混合物之 酸浴。本發明的較佳具體例係敘述於附屬項中。 2〇 依照本發明之低聚吩嗉正離子化合物之混合物可 助益於被使用在一酸浴尹,係為了形成裝飾性表面之目 的而來電解製備出一高度光亮、均一的鋼沉積物。再 者,該混合物可助益被使用在一銅錄浴中 τ 以將一鋼沉 積物電解沉積至印刷電路板上,而讓該銅沉積物選擇性 25 地與完全地填充至印刷電路板内的盲微孔。甚者,1、、曰 10 1313679 合物係有助益於被使用在一銅鍍浴中,而在製造積體電 路時,將一銅沉積物電解沉積至提供以凹槽(溝槽與孔) 之半導體基材(晶圓)表面上,特別是沉積至具有高寬深 比凹槽之表面上。藉此,該銅沉積物被均勻地製造於全 5 部的半導體基材表面上。Wherein R, R2, R3, R4, R5, R6, r7, r%r9 are the same or different and are hydrogen, lower alkane, or possibly methyl, ethyl, methoxy or ethoxy substituted The aryl group, and the R5 and R8 systems further represent a single or polymeric sulfonium cation, the A-line is an acid group and the n10 system is an integer from 2 to 100. According to DE-AS 2039831, the starting materials for the preparation of these compounds are monoamines, for example 2-methyl-3-amino-6-didecyl-amino-9-phenyl-phenanthrium Sulfate. Under the use of nitrosylsulfuric acid and nitrous acid, the amine sulfate and sulfuric acid were heavily gasified at _5 °C. After the nitrous acid was destroyed, the reaction solution was heated to 2 ° C. Further, the reaction mixture was neutralized by a test. In principle, it is possible to use these compounds in a copper acid plating electrolyte with a bright and uniform copper layer deposition. In any case, they still lead to very unstable results in copper plating operations. SUMMARY OF THE INVENTION 3 9 1313679 Summary of the Invention Therefore, a basic object of the present invention is to prevent the above disadvantages of the known copper bath. A more particular object of the present invention is to create an additive by which a particularly uniform and glossy, meaning highly bright, and uniform and ductile copper coating is reproducibly manufactured. . It is a further object of the present invention to apply a highly bright, uniform and ductile copper layer to a relatively high current density. Another object of the present invention is to find one of such copper plating baths, i.e., to continuously obtain a copper layer having the desired properties during a long period of plating bath operation. The solution outlined here for the previous problem is to provide a mixture of oligo-fluorene cations as described in the scope of the patent application; the method of claim 15 is to prepare the compound 15 An acid bath for electrolytically depositing a copper deposit, comprising a mixture of the oligomeric phenanthrene cation compounds of the present invention; and the scope of claim 26, as in claim 22; A method of electrolytically depositing a copper deposit using an acid bath containing the mixture. Preferred embodiments of the invention are described in the dependent items. 2) A mixture of oligo-fluorene ruthenium cation compounds in accordance with the present invention may be useful for electrolysis to produce a highly bright, uniform steel deposit for use in the formation of a decorative surface in an acid bath. Furthermore, the mixture can be advantageously used in a copper bath to deposit a steel deposit onto the printed circuit board, allowing the copper deposit to be selectively and completely filled into the printed circuit board. Blind micropores. Moreover, 1, 曰 10 1313679 compound helps to be used in a copper plating bath, and in the manufacture of integrated circuits, a copper deposit is electrolytically deposited to provide grooves (grooves and holes) On the surface of the semiconductor substrate (wafer), in particular, deposited onto a surface having a high aspect ratio groove. Thereby, the copper deposit is uniformly formed on the surface of all five semiconductor substrates.

I:實施方式:J 發明之詳細說明 本發明之具有化學通式<1>與<11>其中之一者之低 聚吩嗉正離子化合物之混合物在此係被予以推斷出,就 10 申請專利範圍中的該低聚吩嗔正離子化合物之混合物 而言,對僅含有所提及之該低聚吩嗉正離子化合物中的 至少一者或是所包含的混合物來說,其特徵在於低聚化 程度為2或3,除該混合物外,對於少量的較高級低聚吩 嗉正離子化合物來說,其特徵為低聚化程度至少為4。 15 根據本發明,特徵為低聚化程度至少為4之較高級低聚 吩嗉正離子化合物在後者混合物中的含量會比20 mol-%更少。無論如何,本發明之混合物可以以本發明 之方法來製備。相較之下,本發明之混合物可以以 DE-AS 20 28 803以及DE-AS 20 39 831所描述之方法而 20 被達成,因後者之方法係在特別地生產出特徵在一低聚 程度>3之低聚吩嗪正離子化合物(具有超過20 mol-%之 含量)。 如在此與申請專利範圍中所述之該術語”低級烷 基”係指(31-至C8之烷基以及更佳的為(^至(:4之烷基, 11 1313679 ,科$月2修正替換頁 意指甲基、乙基、η-丙基、異-丙基、η-丁基、異-丁基 以及叔-丁基如在此以及申請專利範圍中所述之被予 以取替之烷基,較佳地係意指磺基或羧基所取代之烷 5 如在此以及申請專利範圍中所述之”芳基”係指苯 基或諸如萘基-1與萘基-2之多環芳族,其中,這些基團, 個別地,可以是未被取代的或是被取代的。若這些基團 被取代時,他們更特別地是被烷基、較佳地為低級烷 基、鹵素、羥基、胺基所取代,其中的胺基為NH2、NHR 10 或NR'R",其中的R、R’與R"依次可為低級烷基、腈基、 氰硫基以及硫代羥基。苯基可更特別地在2-、4-與6-位 置上被予以取代。 如在此以及申請專利範圍中所述之,’雜芳基”,較佳 地係指喷α定基、啥琳基、異唆琳基。 15 如在此以及申請專利範圍中所述之”COO酯,,以 及”so3酯,,較佳地係指諸如cooch3,COOC2H5低級醇 之羧酸酯等等’以及諸如S〇3CH3,so3c2h5低級醇之硫 酸酉旨等等。此意謂著係為C!至Cs醇之低級醇,較佳地為 C]至C4醇之低級醇,也就是甲醇、乙醇、η-丙醇、異丙 20 醇、η- 丁醇、異丁醇以及叔丁醇。如在此以及於申請專 利範圍中所述之”COO鹽”以及”SO3鹽,,各別係指羧酸 鹽以及硫酸鹽,更特別地’此係意指著係為諸如Na+COO 或Cu2+(S〇3_ )2之驗金屬鹽、驗土金屬鹽、銘鹽以及銅 鹽。 25 如在此以及申請專利範圍中所述之”齒素,,較佳地 12 1313679 係指諸如氟、氯、溴、鐵,較佳者為氣。 為了命名在吩嗉正離子單體單元骨架上碳原子之 目的,在此處與在申請專利範圍中,係以IUPAC命名 法來作為準則,若對本案中所示結構不能肯定時係以在 5 此所示之化學結構式來優先考慮之。 本發明初步目的之解決之道是在一低聚吩嗪正離 子化合物之新穎混合物可助益地被用在一酸性銅鍍電 解質中。 本發明之該低聚吩嗉正離子化合物之混合物,可藉 10 由使用下列之一方法而被獲得,其係在一”一鍋法反應” 中,一單體吩嗉正離子化合物或數個吩嗉正離子化合物 之混合物係被予以重氮化,並且所得到的重氮化化合物 係藉由形成該低聚吩嗉化合物之混合物而被予以反應。 相較之下,使用DE-AS 20 28 803 與DE-AS 15 2039831所述之方法無法得到本發明低聚吩啳正離子化 合物。所發現到的是,本發明之混合物僅可使用本發明 之方法而被製備。 於本發明混合物中之該低聚吩嗉正離子化合物之 特徵係在於他們是呈二聚的或三聚的,以及 20 1.他們可以更特別地含有一或數個羥基基團或 更佳者為氫原子, 2.和/或,較佳的是,並不是每一個吩嗉單體都 必須帶有一電荷, 13 1313679 3.彳/或,为子内之化合物可較佳地包含有不同 的吩嗉單體單元。 因此,本發明之特別特徵係在該低聚吩啳正離子化 合物之混合物係包含至少一選自於依據下列化學通式 5 <1:>而含有二單體單元化合物所構成群組之吩嗉正離子 化合物:I: Embodiment: Detailed Description of the Invention The mixture of the oligomeric porphyrin cation compound of the present invention having one of the chemical formulas <1> and <11> is inferred here, The mixture of the oligomeric porphyrin cation compounds in the scope of the patent application is characterized in that it contains at least one of the oligo-phene cation cation compounds mentioned or a mixture thereof The degree of oligomerization is 2 or 3, except for the mixture, which is characterized by a degree of oligomerization of at least 4 for a small amount of higher oligomeric porphyrin cation compound. According to the present invention, higher oligophene cation cation compounds characterized by a degree of oligomerization of at least 4 will be present in the latter mixture in a lesser amount than 20 mol-%. In any event, the mixtures of the invention can be prepared by the process of the invention. In contrast, the mixture of the invention can be achieved by the method described in DE-AS 20 28 803 and DE-AS 20 39 831, the latter method being specially produced in a degree of oligomerization &gt 3 oligophenazine cation compound (having a content of more than 20 mol-%). The term "lower alkyl" as used herein and in the scope of the patent application refers to (31- to C8 alkyl and more preferably (^ to (: 4 alkyl, 11 1313679, Section $2) Modified replacement page means that methyl, ethyl, η-propyl, iso-propyl, η-butyl, iso-butyl and tert-butyl are replaced as described herein and in the scope of the patent application. Alkyl, preferably means sulfo or carboxy substituted alkane 5 as used herein and in the scope of the patent, "aryl" means phenyl or such as naphthyl-1 and naphthyl-2 Polycyclic aromatic, wherein these groups, individually, may be unsubstituted or substituted. If these groups are substituted, they are more particularly alkyl, preferably lower alkyl Substituted by halogen, hydroxyl or amine, wherein the amine group is NH2, NHR 10 or NR'R", wherein R, R' and R" may be lower alkyl, nitrile, thiocyanyl and thio Hydroxy. The phenyl group may be more specifically substituted at the 2-, 4- and 6-positions. As described herein and in the scope of the patent, 'heteroaryl,' preferably α定基, 啥琳基, iso-indolyl. 15 "COO ester," and "so3 ester" as used herein and in the scope of the claims, preferably refers to a carboxylic acid ester such as cooch3, COOC2H5 lower alcohol Etc. 'and sulfuric acid such as S〇3CH3, so3c2h5 lower alcohol, etc. This means a lower alcohol which is a C! to Cs alcohol, preferably a lower alcohol of C] to C4 alcohol, ie methanol , ethanol, η-propanol, isopropanol 20, η-butanol, isobutanol, and tert-butanol. "COO salt" and "SO3 salt" as described herein and in the scope of the patent application, each It refers to a carboxylate and a sulfate, and more particularly, this means a metal salt such as Na+COO or Cu2+(S〇3_)2, a soil metal salt, a salt of a salt, and a copper salt. The dentate described herein and in the scope of the patent application, preferably 12 1313679, means, for example, fluorine, chlorine, bromine, iron, preferably gas. To name the carbon on the backbone of the cation cation monomer unit The purpose of the atom, here and in the scope of the patent application, is based on the IUPAC nomenclature, if the structure shown in this case It can be affirmed that the chemical structure shown in Figure 5 is prioritized. The solution to the preliminary object of the present invention is that a novel mixture of oligophenazine cation compounds can be advantageously used in an acid copper. In the electrolyte, a mixture of the oligomeric porphyrin cation compounds of the present invention can be obtained by using one of the following methods in a "one-pot reaction", a monomeric cation The compound or a mixture of several sulfonium cation compounds is diazotized, and the obtained diazotized compound is reacted by forming a mixture of the oligomeric phenanthrene compounds. In contrast, DE is used. The method described in DE-AS 20 28 803 and DE-AS 15 2039831 does not provide the oligomeric porphyrin cation compounds of the invention. It has been found that the mixtures of the invention can only be prepared using the process of the invention. The oligomeric porphyrin cation compounds in the mixtures of the invention are characterized in that they are dimeric or trimerized, and 20 1. they may more specifically contain one or more hydroxyl groups or better. It is a hydrogen atom, 2. and/or, preferably, not every single monomer has to carry a charge, 13 1313679 3. 彳 / or, the compound in the sub-component may preferably contain different Command the monomer unit. Therefore, a special feature of the present invention is that the mixture of the oligomeric porphyrin cation compounds comprises at least one selected from the group consisting of compounds having two monomer units according to the following Chemical Formula 5 <1:> Command a positive ion compound:

以及依據下列化學通式<π>而含有三聚單體單元 之化合物:And a compound containing a trimer monomer unit according to the following chemical formula <π>:

(A') (A')(A') (A')

(ΑΊ 10 以及低聚吩嗉正離子化合物。結果,除了具有該化 學通式 <[> 與<π>以外,本發明的混合物獨一無二地含 有二和/或三單體單元之化合物’而被包含於混合物中 之任何其他低聚吩嗉正離子化合物也具有二和/或三單 體單元。在此情形下,其他的低聚吩嗉正離子化合物亦 可具有該化學通式小與心。結果,本發明之混合物 不但獨特地含有具有該二和/或三單體單元之化合物, 14 15 1313679 也有其他的低聚吩嗉正離子化合物,該其他的低聚吩嗉 正離子化合物其特徵係為具一低聚程度為4或更大之 低聚物。可更特別地,這些其他化合物在個別的單體單 元内可具有如先前所提及之化學通式<1>與<11>所表 5 示之取代形式。 結構單元 iskrw’/^ccxr4/474’1)^!^373")在此係藉 由下列化學通式<1113>與<1111)>來表示:(ΑΊ10 and an oligomeric sulfonium cation compound. As a result, in addition to the chemical formula <[> and <π>, the mixture of the present invention uniquely contains a compound of a di- and/or tri-monomer unit' And any other oligomeric porphyrin cation compound contained in the mixture also has two and/or three monomer units. In this case, other oligo-phenanthride cation compounds may also have a small chemical formula. As a result, the mixture of the present invention not only uniquely contains a compound having the di- and/or tri-monomer unit, but also has other oligomeric porphyrin cation compounds, the other oligo-glycol cation compound The characteristic is an oligomer having an oligomerization degree of 4 or more. More particularly, these other compounds may have the chemical formula <1> and <<>>;11> The substitution form shown in Table 5. The structural unit iskrw'/^ccxr4/474'1)^!^373") is here by the following chemical formulas <1113> and <1111)> Indicates:

r5/575" r4/4'/4" 或 10 15 \丫^^/^:|/^^R3/373.. &5/575’1 f^4/474n 在化學通式 <1>與<11> 中,R1,R2,R3,R4,R6, R7,R8,R9 ’ R1,R2,R3,R4,R6,R7’,R8,R9, R1’,R2",R3",R4",R6",R7",R8'以及 R9” 係各自分 別地代表下列:氫、鹵素、胺基,其中之胺基可更特別 地是未被取代以或被取代以低級烷基,進一步為OH、 CN、SCN、SH、COOH、COO 鹽、COO 酯、S03H 與 so3鹽、so3酯、低級烷基,其中該烷基亦可以是被取 代的,進一步為芳基與雜芳基。甚者,這些基團亦可以 是一將個別的單體單元鏈合在一起之單鍵。就個別的單 體單元的交聯鍵結之觀點而言,對於本發明混合物在一 15 20 1313679 銅錢浴中所具的效用不甚重要,是 ,〜,,r4,,r6,,r7,,r8,, R9',R1,R2,r3",r4' r6, r7”,R8"以及R9"中所述 的每-個基團可相同地代表一單鍵。三聚化合物中的外 面兩個單體單元可以鍵結至中心單體單元之相同的或 是不同的C6-環上。 R5,R5與R5各自所分別代表者係如同Rl R2, R3,R4,R6 ’ R' R8,r9,Rl,,r2’,r3,,r4,,R6, r7, r7" r8"以及 r9” 0但有條件是它們不為-單鍵。此意謂著於該低聚吩嗔化 合物的二或二單體單元之每一者可透過骨架上每個碳 原子來被予以鍵結至另一個單體單元。然而,透過一氮 原子之一鍵結是不可能的。 進一步地,R2,R2,R2",尺3’與r3”係選自於包含 15氧基、亞胺基或伸甲基之群組,但有條件是:就一被 氧基、亞胺基或伸甲基所取代之單體單元而言,其係 具有化學通式<IIIb>之結構單元 N(R蒙)CC(R_C(R·")。此意謂著,在此情形下,一赌 構係形成於該環内,氧基、亞胺基或伸甲基亦被鍵結至該處。 20 在本文中,要進一步考慮的是,各種的單體單元係展現出鏡像 對稱,所以除了 R2、R2’、R2”、R3'與R3”以外,該R7、R7.、 R7、R8、R8與R8基團可以是氧基、亞胺基與伸甲基, 因為後面的這些基團可與前面的基團互相交換。包含有 三單體單元之低聚吩嗉正離子化合物中,氧基、亞胺基 16 1313679 與伸甲基,較佳地可鍵結至該外面的兩個聚體單元。設 若R2、R2'、R2”、R3'與R3"不是氧基、亞胺基或伸甲基, 該結構單元NCC^R1/1 V1”)C(R2/272")進一步地具有下列化 學通式<IVa>或<1乂1)>中的一者: R1/171" /N^A^272., <IVa> Η 卩 1/1V1” <!Vb> 5 在該化學通式<1>與<11>中,A_係為一酸性陰離 子。要注意的是,A_可以是具有一負價或是更多負價 之一離子。該吩嗉正離子相對於該A—離子之莫耳比當 然仰賴於所相對之價數。 根據本發明,具有化學通式<1>與<11>之所有低聚 10 吩嗉正離子化合物之含量,在混合物中至少有80 mol-%。 根據DE-AS 20398311,在以傳統的二階段生產方 式(重氮化以及繼該低聚吩嗉正離子化合物的繼之形成) 來製備已知的聚合化合物時,所得到之組成物經常是大 15 不相同並且特徵為聚合程度不同,結果使這些物質在電 解質中具有不同作用。再者,對特徵為聚合程度超過5 17 1313679 之高分子量聚合吩嗉正離子化合物而言,在銅電解質中 的溶解度表現不佳,所以在此處的他們僅被允許在一非 常受限的方式下來進行作用。 本發明之混合物不能使用由DE-AS 2039831所知 5 的方法而被製備。因此,本新穎的合成方法,實地上對 藏紅添加物的領域而言,會超越習知方法而來構成一決 定性的改善之道。 於是,藉由一藏紅或數個藏紅之一混合物之重氮 化,以及藉由在一鍋法反應中與結果所得之重氮化合物 10 相反應來形成該低聚吩嗉正離子化合物而被獲得之低 聚吩啳正離子化合物的這些混合物,特別更是本發明的 主體。 新穎的一鍋法反應允許於得到一主要含有二聚或 三聚吩嗉正離子之混合物,並且大部分不含多聚結構。 15 另外,此類低聚吩嗪正離子化合物已被發現到會對所包 含之二聚物或三聚物(當所具有的正電價不足時)有所助 益,所以對這些二聚物或三聚物的一部分而言係個別地 帶有單價或二價。 再者,這些二聚物或三聚物已被發現到會對本發明 20 混合物中所包含之鹵化吩嗉正離子化合物有所助益。他 們表現出遠比鹵化單體或聚合物(特徵在一較高程度之 聚合)高出許多之活性。可從實施例顯示的是,該純為 鹵化的聚合藏紅染料經常表現出不佳的電鍍活性。 18 1313679 進一步地,就那些展現出一增高的電鍍活性之添加 物而言,其所包含的二聚物或三聚物(具有不同單體單 元)係產生於不同藏紅染料之共二聚合或共三聚合或是 於反應過程中產生自上述化合物之一部份分解,而其中 5該低聚吩嗉正離子化合物是自該重氮化化合物而被予 以形成出來。 在使用本發明之混合物於一酸性電解銅鍍浴時,可 能要將該鍍浴操作於一高電流密度之下。此外,當組合 以其他習知添加物時,會有可能形成均勻、光亮之銅沉 10 積物。進一步,該低聚吩嗪正離子染料之效果在藉著根 據本發明之合成而被予以大大地提昇。#由將本發明之 低聚吩嗉正離子化合物特殊混合物添加至一銅電解質 中,在所使用之添加物係比傳統的單體的或多聚的吩嗔 正離子化合物為更低之濃度下,顯著的光澤繼而被予以 15獲彳寸。此結果允許有更加良好的效果與益處。 進步地,5亥—聚或三聚添加物的溶解度係令人驚 訝地優於該多聚的吩嗉正離子化合物。甚者,在催化劑 存在下,該合成實質上係藉由該一鍋法反應而被予以精 簡化。 20 包含於本發明混合物中的特別較佳化合物中,選自 於包含 R ’ R2,R2",r3,r3. r3",r7 r7, r7„ R ’ R8與R8所構成之群組的基團中,至少有一個係 八有t自於包含齒素與經基所構成群組中具有意義 之一者。根據本發明之一特別較佳具體例,在三聚吩嗉 19 1313679 正離子化合物中之經基與南素係鍵結至外面兩個單體 單元上被設計為取代之位置處,所以,根據該化學通式 <::>而於該低聚吩嗉化合物中所選自於一包含r2, r3, R 〃、R所構成之群組的基團中至少有一個係具有一 5選自於包含_素與羥基所構成群組中具有意義之一 者。攻些化合物之特徵是在,在他們轉為最低電流密度 之範圍下,仍在沉積物上成功地產生顯著的光澤。 較佳地,就混合物之中,選自於一包含R2,R2,與 R所構成之群組的基團令至少有一個係代表低級烷 ίο基,更特別的是甲基或乙基。此類化合物藉由合成容易 獲得。 進一步,較佳地,就此類之混合物,其中,選自於 一包含R7 ’ R7與R7’’所構成之群組的基團中至少有一 個係代表一烷基化的胺基,更特別的是,胺基係被予以 15 單一或二取代以低級烧基,並且更佳的是,N-甲胺、 N-乙胺、N,N-二甲胺以及N,N_二乙胺。使用此類吩嗉 正離子化合物於本發明混合物内,一極度高電鍍效率的 優點被達成。 就使用混合物的進一步優點,其中,選自於—包含 20 r5’r5'與R5”所構成之群組的基團中至少有一個係代表 甲基或一芳基’更特別之芳基係為苯基或甲苯基。這此 混合物’即使是在銅電解質中處於最低劑量時仍具有產 生出最佳結果之優點’所以本沉積方法是非常有用的。 20 1313679 藉此,芳基基團係比烷基基團更清楚地展現出一被提高 的電鍍效果。 發現到使用混合物是有利的,其中酸性陰離子ΑΓ 係為選自於包含硫酸、硫酸氫化物、化物、四氟硼酸、 5 磷酸、硝酸、乙酸、三氟乙酸以及甲磺酸所構成之一群 組。意謂著藉由氟、氣、漠·、磁之鹵素一族。含有這些 酸性陰離子之混合物特別地適合使用在電解的酸性銅 鍍浴,因為他們對沉積條件不會有負面影響。甚者,具 有這些酸離子的二聚與三聚吩嗉正離子化合物在銅鍍 10 浴中展現出良好的溶解度。 在本發明特別有效用之混合物中,該二聚和/或三 聚吩啳正離子化合物具有下列化學通式<v>、<VI>、 <VII> 以及 <VIII>:R5/575"r4/4'/4" or 10 15 \丫^^/^:|/^^R3/373.. &5/575'1 f^4/474n in chemical formula <1> With <11>, R1, R2, R3, R4, R6, R7, R8, R9 ' R1, R2, R3, R4, R6, R7', R8, R9, R1', R2", R3", R4&quot ; R6", R7", R8' and R9" each independently represent the following: hydrogen, halogen, amine group, wherein the amine group may be more specifically unsubstituted or substituted with a lower alkyl group, further OH, CN, SCN, SH, COOH, COO salt, COO ester, S03H and so3 salt, so3 ester, lower alkyl, wherein the alkyl group may also be substituted, further aryl and heteroaryl. These groups may also be a single bond that groups the individual monomer units together. For the cross-linking of individual monomer units, the mixture of the invention is in a 15 20 1313679 copper coin bath. The utility is not very important, it is, ~,, r4,, r6,, r7,, r8, R9', R1, R2, r3", r4' r6, r7", R8" and R9" Each group can represent the same one . The two outer monomer units in the trimeric compound may be bonded to the same or different C6-rings of the central monomer unit. R5, R5 and R5 are respectively represented as Rl R2, R3, R4, R6 'R' R8, r9, Rl,, r2', r3, r4, R6, r7, r7"r8" and r9" 0, but with the proviso that they are not a single bond. This means that each of the two or two monomer units of the oligomeric phenanthrene compound can be bonded to each other through each carbon atom of the backbone. Monomer unit. However, it is impossible to bond through one of the nitrogen atoms. Further, R2, R2, R2", 3' and r3" are selected from the group consisting of 15 oxy, imine or armor. a group of groups, provided that, in the case of a monomer unit substituted by an oxy group, an imido group or a methyl group, it has a structural unit of the general formula <IIIb> CC (R_C(R·"). This means that in this case, a gambling system is formed in the ring, and an oxy group, an imido group or a methyl group is also bonded thereto. In this paper, it is further considered that various monomer units exhibit mirror symmetry, so in addition to R2, R2', R2", R3' and R3", the R7, R7., R7, R8, R8 and R8 Group can An oxy group, an imido group and a methyl group, since these latter groups can be exchanged with the preceding groups. Among the oligomeric sulfonium cation compounds containing three monomer units, the oxy group, the imine group 16 1313679 and Methyl, preferably bonded to the outer two polymer units. If R2, R2', R2", R3' and R3" are not oxy, imine or methyl, the structural unit NCC ^R1/1 V1")C(R2/272") further has one of the following chemical formulas <IVa> or <1乂1)>: R1/171" /N^A^272. <IVa> Η 卩1/1V1" <!Vb> 5 In the chemical formulas <1> and <11>, A_ is an acidic anion. It is to be noted that A_ may be One having a negative or more negative valence. The molar ratio of the positron to the A-ion is of course dependent on the relative valence. According to the invention, the chemical formula <1> The content of all oligomeric 10 cation cation compounds with <11> is at least 80 mol-% in the mixture. According to DE-AS 20398311, in the conventional two-stage production mode (diazo And in the subsequent formation of the oligomeric phenanthrene cation compound to prepare a known polymer compound, the resulting composition is often a large 15 different and characterized by a different degree of polymerization, with the result that these materials have an electrolyte in the electrolyte. Different effects. Furthermore, for high molecular weight polymeric sulfonium cation compounds characterized by a polymerization degree exceeding 5 17 1313679, the solubility in the copper electrolyte does not perform well, so here they are only allowed in a very limited manner Let it work. The mixtures according to the invention can not be prepared using the process known from DE-AS 2039831. Therefore, the novel synthetic method, in the field of saffron additives, will go beyond the conventional methods to constitute a decisive improvement. Thus, the oligomeric porphyrin cation compound is formed by diazotization of a mixture of one of saffron or several saffron, and by reacting the resulting diazonium compound 10 in a one-pot reaction. These mixtures of oligomeric porphyrin cation compounds obtained are, in particular, the main body of the invention. The novel one-pot reaction allows for the obtaining of a mixture containing predominantly dimeric or trimeric sulfonium cations, and most of which do not contain a polymeric structure. 15 In addition, such oligophenazine cation compounds have been found to contribute to the inclusion of dimers or trimers (when the positive valence is insufficient), so these dimers or Part of the trimer is individually monovalent or divalent. Furthermore, these dimers or trimers have been found to be beneficial for the halogenated sulfonium cation compounds contained in the 20 mixtures of the present invention. They exhibit much higher activity than halogenated monomers or polymers (characterized at a higher degree of polymerization). It can be seen from the examples that the purely halogenated polymeric saffron dye often exhibits poor plating activity. 18 1313679 Further, for those additives exhibiting an increased plating activity, the dimers or trimers (having different monomer units) contained therein are produced by co-dimerization of different saffron dyes or The co-three polymerization or partial decomposition of the above compound occurs during the reaction, and wherein 5 of the oligomeric porphyrin cation compound is formed from the diazotized compound. When using the mixture of the present invention in an acidic electrolytic copper plating bath, it is possible to operate the plating bath below a high current density. In addition, when combined with other conventional additives, it is possible to form a uniform, bright copper deposit. Further, the effect of the oligophenazine cation dye is greatly enhanced by the synthesis according to the present invention. # Adding a special mixture of the oligomeric porphyrin cation compound of the present invention to a copper electrolyte at a lower concentration than the conventional monomeric or polyfluorene cation cation compound used The remarkable luster was then given 15 points. This result allows for better results and benefits. Progressively, the solubility of the 5H-poly or trimeric additive is surprisingly superior to the poly-complexed cation compound. Moreover, in the presence of a catalyst, the synthesis is substantially simplified by the one-pot reaction. 20 Particularly preferred compounds contained in the mixture of the present invention, selected from the group consisting of R'R2, R2", r3, r3.r3", r7 r7, r7 „ R ' R8 and R8 At least one of the eight has a meaning from one of the groups consisting of dentate and meridine. According to a particularly preferred embodiment of the invention, in the trimeric sulfonium 19 1313679 cation compound The base group and the south group are bonded to the positions on the outer two monomer units which are designed to be substituted, and therefore, are selected from the oligomeric fluorene compound according to the chemical formula <::> At least one of the groups comprising a group consisting of r2, r3, R 〃, and R has a 5-member selected from the group consisting of a group consisting of _ 素 and a hydroxy group. It is characterized by the fact that, in the range where they are converted to the lowest current density, a significant gloss is still successfully produced on the deposit. Preferably, among the mixtures, selected from the group consisting of R2, R2, and R. The group's group is such that at least one of the groups represents a lower alkane group, more specifically a methyl group. Ethyl. Such a compound is easily obtained by synthesis. Further, preferably, a mixture of such a type, wherein at least one of the groups consisting of a group consisting of R7 'R7 and R7'' is selected Representing a monoalkylated amine group, more particularly, the amine group is 15 mono- or di-substituted to a lower alkyl group, and more preferably, N-methylamine, N-ethylamine, N,N-di Methylamine and N,N-diethylamine. The use of such a porphyrin cation compound in the inventive mixture, the advantage of an extremely high plating efficiency is achieved. Further advantages of using a mixture, wherein selected from - 20 At least one of the groups of the group consisting of r5'r5' and R5" represents a methyl group or an aryl group. More particularly, the aryl group is a phenyl group or a tolyl group. This mixture 'has the advantage of producing the best results even at the lowest dose in the copper electrolyte', so this deposition method is very useful. 20 1313679 Thereby, the aryl group exhibits an improved plating effect more clearly than the alkyl group. It has been found to be advantageous to use a mixture wherein the acidic anion is selected from the group consisting of sulfuric acid, hydrogen sulphate, sulphuric acid, tetrafluoroboric acid, 5 phosphoric acid, nitric acid, acetic acid, trifluoroacetic acid, and methanesulfonic acid. . It means a family of halogens made of fluorine, gas, desert, and magnetism. Mixtures containing these acidic anions are particularly suitable for use in electrolytic acid copper plating baths because they do not adversely affect the deposition conditions. In addition, dimerized and trimeric sulfonium cation compounds having these acid ions exhibited good solubility in a copper plating bath. In a particularly useful mixture of the present invention, the dimeric and/or trimeric sulfonium cation compound has the following chemical formulas <v>, <VI>, <VII>, and <VIII>:

21 15 1313679 521 15 1313679 5

在這些例子中出現有二價的氧基基團、胺基基團或 伸甲基基團,所以電彳林足之情料形成於低聚吩啳正 離子化合物,此係由於個制結構之形成所致。 10In these examples, a divalent oxy group, an amine group or a methyl group is present, so that the electroless stalk is formed in the oligo-phenoline cation compound, which is due to the individual structure. Caused by formation. 10

在這些化合物的所有Rl,r2,r4,r6,r7,r8, R9 ’ R1。’ Rii ’ Ri ’ R2’,r3’,r4, r6,r8,r9, r1。,All R1, r2, r4, r6, r7, r8, R9' R1 in these compounds. ' Rii ' Ri ’ R2', r3', r4, r6, r8, r9, r1. ,

Rl1 ’ R1 ’ R2' R3’’,R4' r6' R8”,r9’,r1〇„ 以及 r11" 基團中,可以各自分別地具有一選自於包含氫或諸如甲 基或乙基之低級院基所構成群組中之具有意義的一 者。A ,代表一如先前所述之一抗衡陰離子,較佳為 氣化物、硫酸氫化物或四氟领酸。 於本發明混合物中的化合物除了有良好的亮度以 外’他們亦有予良好均一性的優點。 22 15 1313679 根據本發明,於混合物内之下列單體單元已被證明 出是特別有效的,當它們以其明顯較低濃度存於銅電解 質中仍能在高電流密度與低電流密度兩者中顯示出優 異的光亮度: 5 a) 7-N,N-二曱基胺基-3-羥基-2-甲基-5-苯基-吩 嗉正離子係示於下列化學式: <a> b) 3-氯-7-N,N-二甲基胺基-5-苯基-吩嗉正離子係 示於下列化學式:Rl1 ' R1 ' R2' R3'', R4' r6' R8", r9', r1〇„ and r11" may each have a lower one selected from hydrogen containing or such as methyl or ethyl. One of the meanings of the group formed by the institution. A represents a counter anion as previously described, preferably a vapor, a hydrogen hydride or a tetrafluoro acid. The compounds in the mixtures of the invention have the advantage of good uniformity in addition to good brightness. 22 15 1313679 According to the present invention, the following monomer units in the mixture have proven to be particularly effective, and they can still be in both high current density and low current density when they are present in the copper electrolyte at significantly lower concentrations. Excellent brightness is shown: 5 a) 7-N,N-Dimercaptoamino-3-hydroxy-2-methyl-5-phenyl-phenanthridine is shown in the following chemical formula: <a> b) 3-Chloro-7-N,N-dimethylamino-5-phenyl-phenanthridine is shown in the following chemical formula:

<b> c) 8-二甲基胺基-10-苯基-10氫-吩嗉-2-酮係示於 下列化學式: 23 10 1313679 <c> d) 2-N,N-二曱基胺基-10-苯基-5,10-二氫吩嗉係 示於下列化學式: Η<b> c) 8-Dimethylamino-10-phenyl-10hydro-phenant-2-one is shown in the following chemical formula: 23 10 1313679 <c> d) 2-N, N-di The mercaptoamino-10-phenyl-5,10-dihydrophenanthene is shown in the following chemical formula: Η

<d> e) 3-N-乙基胺基-7-羥基-5-苯基-吩嗉正離子係示 於下列化學式:<d> e) 3-N-Ethylamino-7-hydroxy-5-phenyl-phenophene cation is shown in the following chemical formula:

24 1313679 f) 3-氣-7-N-乙基胺基-5-苯基-吩嗉正離子係示於 下列化學式:24 1313679 f) 3-Gas-7-N-ethylamino-5-phenyl-phenanthrium cation is shown in the following chemical formula:

<f><f>

g) 3-甲基-8-N-甲基胺基-10-苯基-10氫-吩嗉-2-酮係示於下列化學式: <g>g) 3-methyl-8-N-methylamino-10-phenyl-10hydro-phenant-2-one is shown in the following chemical formula: <g>

h) 7 -N-曱基胺基-2-曱基-5-苯基-5,10 -二氫吩嗉 係示於下列化學式: 25 1313679 ΗΝ <h> 下列的低聚吩嗉正離子化合物於本發明之混合物 中被偵測到,並且完美地適用於電解銅沉積以在具有一 還原趨勢之高電流密度下形成燃燒: i. 3'-Ν,Ν-二曱基胺基-3,8'-二曱基-8-(Ν-曱基胺 5 基)-7’-氧基-10, 5’-二苯基-5',7'-二氳-[2,2|]二聯吩 嗉基-10-正離子-氣化物:h) 7-N-decylamino-2-mercapto-5-phenyl-5,10-dihydrophenanthene is shown in the following chemical formula: 25 1313679 ΗΝ <h> The following oligomeric porphyrin cations The compounds are detected in the mixtures of the invention and are perfectly suited for electrolytic copper deposition to form combustion at high current densities with a reducing tendency: i. 3'-Ν, Ν-didecylamino-3 ,8'-dimercapto-8-(indolyl-mercaptoamine 5yl)-7'-oxy-10, 5'-diphenyl-5',7'-dioxime-[2,2|] Bis-phenanthryl-10-n-ion-vapor:

ii. 3,8',8Π-三甲基-8,3',3Π-參-(Ν-甲基胺基)-7”-氧基 -10,5',5Π-三苯基5”,71,-四氫-[2,2^,21 三聯 10 吩啳-10-正離子-氣化物: 26Ii. 3,8',8Π-trimethyl-8,3',3Π-gin-(Ν-methylamino)-7"-oxy-10,5',5Π-triphenyl 5", 71,-tetrahydro-[2,2^,21 triple 10 啳-10- positive ion-vaporation: 26

1313679 iii. 8,3,-貳-(N,N-二曱基胺基)-8,-甲基-7'-氧基-10,5'-二 苯基-5 二氫-[2,2']二聯吩嗪基-10-正離子-硫酸 氫鹽:1313679 iii. 8,3,-贰-(N,N-Didecylamino)-8,-methyl-7'-oxy-10,5'-diphenyl-5 dihydro-[2, 2']Diphenazinyl-10-positive ion-hydrogen sulfate:

於本發明中,具有非常良好效用之另外物質為: iv. 8,8'-貳-(N,N-二曱基胺基)-3,3'-二曱基-10,10'-二苯 基-[2,2']二聯吩嗉基-10,10'-正離子-四氟硼酸鹽:In the present invention, another substance having very good effect is: iv. 8,8'-贰-(N,N-didecylamino)-3,3'-dimercapto-10,10'-di Phenyl-[2,2']diphenyl-indenyl-10,10'-positive-tetrafluoroborate:

27 <iv> 131367927 <iv> 1313679

v> V v. 8,以-貳-(N,N-二甲基胺基)-10,10'-二苯基-3-甲基-[2,2’]二聯吩啳基-10,10’-正離子-四氟硼酸鹽:v> V v. 8, -贰-(N,N-dimethylamino)-10,10'-diphenyl-3-methyl-[2,2']diphenylen-10 , 10'-positive ion-tetrafluoroborate:

-N vi. 3,8'-貳-(N,N-二曱基胺基)-8,3'-二曱基-5,10、二苯 5 基-7-羥基-[2,2’]二聯吩嗉基-5,10’-正離子-四氟硼 酸鹽:-N vi. 3,8'-贰-(N,N-Didecylamino)-8,3'-dimercapto-5,10,diphenyl5-yl-7-hydroxy-[2,2' Di-linked fluorenyl-5,10'-positive ion-tetrafluoroborate:

vii. 3,8'-貳-(N,N-二曱基胺基)-8,3'-二甲基-5,10'-二苯 基-7 -羥基-[2,2']二聯吩嗉基-5,10'-正離子-氯化鹽:Vii. 3,8'-贰-(N,N-Didecylamino)-8,3'-dimethyl-5,10'-diphenyl-7-hydroxy-[2,2']联 嗉 -5-5,10'- cation-chloride:

28 1313679 viii· 3,8,,8”-參-(N,N-二曱基胺基)-8-甲基-5,10,,10”-三 苯基-[2,2';7',2”]三聯吩嗉-5,10',10”-正離子-四氟 硼酸鹽:28 1313679 viii· 3,8,,8”-para-(N,N-didecylamino)-8-methyl-5,10,10′′-triphenyl-[2,2′;7 ',2"]Triple phenanthrene-5,10',10"-positive ion-tetrafluoroborate:

5 ix. 8Ά,Ν-二乙基胺基-8-N,N-d二曱基胺基-3-甲基 -10,10’-二苯基_[2,2’]二聯吩嗉基-10,10’-正離子-硫酸鹽:5 ix. 8Ά,Ν-Diethylamino-8-N,Nd-didecylamino-3-methyl-10,10'-diphenyl-[2,2']diphenyl-anthracenyl- 10,10'-positive ion-sulfate:

X. 8’-N,N-二乙基胺基-3-N,N-二甲基胺基-7-羥基-18-10 甲基-5,10’-二苯基-[2,2’]二聯吩嗉基-6,10’-正離子 -硫酸鹽: 29X. 8'-N,N-Diethylamino-3-N,N-dimethylamino-7-hydroxy-18-10 methyl-5,10'-diphenyl-[2,2 ']Dithiophene-6,10'-positive ion-sulfate: 29

1313679 xi. 8,3',3’-參-(N,N-二乙基胺基)-7-羥基-氧基 -10,5,,5,,-三苯基-5,,10,,5,,,7,,-四氫-[2,2,,7,,2,,]三 聯吩嗔_ 10 -正離子-硫酸氮鹽.1313679 xi. 8,3',3'-para-(N,N-diethylamino)-7-hydroxy-oxy-10,5,5,-triphenyl-5,10 ,5,,,7,,-tetrahydro-[2,2,,7,,2,,]tripyin 嗔 10 - cation - sulfate nitrogen salt.

xii. 3,8、貳-(N,N-二曱基胺基)-7-羥基-5,10'-二苯基 春 _[2,2']二聯吩嗉基-6,10’-正離子-硫酸鹽:Xii. 3,8,贰-(N,N-didecylamino)-7-hydroxy-5,10'-diphenylchun_[2,2']diphenyl--6,10' - cation-sulfate:

30 1313679 xiii. 7-氯-3,8’-貳-(N,N-二甲基胺基)-5,10’-二苯基-8-甲 基-[2,2']二聯吩嗉基-5,10'-正離子-氯化鹽:30 1313679 xiii. 7-Chloro-3,8'-fluorenyl-(N,N-dimethylamino)-5,10'-diphenyl-8-methyl-[2,2']dithiophene Mercapto-5,10'-positive ion-chlorinated salt:

<xiii> xiv. 7-氯-3,8’-貳-(N,N-二曱基胺基)-8,3’-二甲基-5,10’-5 二苯基-[2,2']二聯吩嗉基-5,10'-正離子-氣化鹽:<xiii> xiv. 7-Chloro-3,8'-fluorene-(N,N-didecylamino)-8,3'-dimethyl-5,10'-5 diphenyl-[2 , 2'] di-indenyl-5,10'-positive ion-vaporized salt:

XV. 7-氣-3,8’-貳-(N,N-二曱基胺基)-5,10’-二苯基-[2,21 二聯吩嗉基-5,10'-正離子-氣化鹽: 31 1313679XV. 7-Gas-3,8'-indole-(N,N-didecylamino)-5,10'-diphenyl-[2,21 dibiphenyl-5,10'-positive Ion-vaporized salt: 31 1313679

xvi. 7-氣-3,8’,8’’-參-(N,N-二甲基胺基)-8,3’-二甲基 -5,10’,10’,-三苯基-[2,2’;7’,2”]三聯吩嗉基 -5,10',10”-正離子-氣化鹽:Xvi. 7-Gas-3,8',8''-F-(N,N-Dimethylamino)-8,3'-dimethyl-5,10',10',-triphenyl -[2,2';7',2"]Triplexin-5,10',10"-positive ion-vaporized salt:

xvii. 7-氣-8,Γ-二曱基-8’-N,N-二甲基胺基-5,10’-二苯基 -[2,2']二聯吩嗉基-5,10'-正離子-氯化鹽: 32 1313679Xvii. 7-Gas-8, fluorenyl-dimercapto-8'-N,N-dimethylamino-5,10'-diphenyl-[2,2']dibiphenyl-5, 10'-positive ion-chlorinated salt: 32 1313679

xviii. 8,8’-貳-(N,N-二甲基胺基)-10,10’-二甲基 _[2,2']二 聯吩嗉基-1〇,1〇'-正離子-硫酸氫鹽:Xviii. 8,8'-贰-(N,N-Dimethylamino)-10,10'-dimethyl-[2,2']diphenyl-indenyl-1〇,1〇'- Ion-hydrogen sulfate:

N N . I <XV||i> 5 xix. 8,8,-貳-(Ν,Ν-二甲基胺基)-7-氧基-10,5’,5”-三苯基 -5”,7”-二氫-[2,2';7’,2”]三聯吩嗉-10,5,-正離子-硫 酸氫鹽:NN . I <XV||i> 5 xix. 8,8,-贰-(Ν,Ν-dimethylamino)-7-oxy-10,5',5"-triphenyl-5 ",7"-dihydro-[2,2';7',2"]tripyin-10,5,-n-ion-hydrogen sulfate:

33 1313679 XX. 8,3',3”-參-(N,N-二乙基胺基)-8-曱基-5,10’,10”-三 苯基-[2,2’;7’,2’’]三聯吩嗉-5,10’,10”-正離子-四氟 硼酸鹽:33 1313679 XX. 8,3',3"- cis-(N,N-diethylamino)-8-mercapto-5,10',10"-triphenyl-[2,2';7 ',2'']Triple phenanthrene-5,10',10"-positive ion-tetrafluoroborate:

5 xxi. 8,8’-貳-(N,N-二乙基胺基)-10,10’-二苯基 _[2,2’]二 聯吩嗉基-1〇,1〇’-正離子-四氟硼酸鹽:5 xxi. 8,8'-贰-(N,N-diethylamino)-10,10'-diphenyl-[2,2']diphenyl-indenyl-1〇,1〇'- Positive ion-tetrafluoroborate:

xxii. 8,8,-貳-(Ν,Ν-二曱基胺基)-3-氯-10,10,-二苯基-[2,2']二聯吩嗉基-10,10'-正離子-氣化鹽:Xxii. 8,8,-贰-(Ν,Ν-didecylamino)-3-chloro-10,10,-diphenyl-[2,2']dipontyl-10,10' - positive ion - gasification salt:

34 131367934 1313679

<xxii> xxiii. 3,3’,3”-參-(N-甲基胺基)-8”-氣-5,5’,5”-三苯基 [8,2’;8’,7’’]三聯吩嗉-5,5’,5”-正離子-氣化鹽:<xxii> xxiii. 3,3',3"-para-(N-methylamino)-8"-a gas-5,5',5"-triphenyl[8,2';8', 7'']Triple phenotype-5,5',5"-positive ion-vaporized salt:

5 本發明混合物中的二聚與三聚吩啳正離子的特性 ® 與具體内容可藉由使用下列方法來確認: 為確認與定量包含於依據本發明混合物中的化合 _ - 物,質譜儀被特別用於本案中,較佳地,光譜係在下列 . 條件下被予以紀錄:藉由電子噴離子化之手段來電偶至 10 四極質譜儀(ESI/MS)或四極離子阱(ESI/QIT-MS),藉由 基質輔助雷射脫附游離手段來電偶至四極離子阱 (AP-MALDI/Q1T-MS),或藉由基質輔助雷射脫附游離手 段來電偶至時間式飛行質譜儀(MALDI-TOF)。較佳為 35 1313679 MALDI方法。為定量地偵測出該化合物,於質譜儀中 之所有訊號的總和被設定於100 mol-%。所偵測出的個 別訊號係以其高度來對應。藉此,得以假設針所指派之 分子峰值的電離度與敏感度係處於相同高水準。 5 可另擇地,該低聚吩嗉正離子亦可使用其他方法而 被被予以定量地偵測到,該方法為藉由一質譜儀連接以 一高液相層析單元(LC-MS-coupling),此係為了透過質 譜儀來指派HPLC層析内的個別峰值之目的。在藉由 LC-MS偶合之手段而於一參考混合物内做一第一次偵 10 測後,在不需LC-MS-偶合下,可以藉由考慮用於測定 之峰值的滯留時間繼而來操作定量測定。 可另擇地,該HPLC-方法亦可用於定量地偵測出混 合物中的低聚吩嗉正離子化合物,特別是使用凝膠滲透 層析。為改善正電荷性之化合物的分離,可將陰離子性 15 的潤溼劑添加至本案的溶劑(洗提液)中來形成離子對 (離子對層析)。 就具有先前所說明之結構而且被包含在本發明混 合物中低聚吩嗉正離子化合物,其係可於一序列之重氮 化,以及在一鍋法反應中藉由轉換化學通式為<IX>之單 20 體吩啳正離子化合物來將所反應之該重氮化合物形成 至該低聚吩嗉正離子化合物上而被獲得: 36 13136795 The properties of the dimeric and trimeric phenanthrene cations in the mixture of the invention □ can be confirmed by the following methods: To confirm and quantify the conjugate contained in the mixture according to the invention, the mass spectrometer is Particularly for use in the present case, preferably, the spectroscopy is recorded under the following conditions: by means of electron-jet ionization, the couple is coupled to a 10 quadrupole mass spectrometer (ESI/MS) or a quadrupole ion trap (ESI/QIT- MS), by means of matrix-assisted laser desorption free means, to the quadrupole ion trap (AP-MALDI/Q1T-MS), or by matrix-assisted laser desorption free means to call into the time-of-flight mass spectrometer (MALDI) -TOF). Preferably, the 35 1313679 MALDI method. To quantitatively detect the compound, the sum of all signals in the mass spectrometer was set at 100 mol-%. The detected individual signals correspond to their heights. By this, it is assumed that the ionization degree of the molecular peak assigned by the needle is at the same high level as the sensitivity. Alternatively, the oligomeric sulfonium cation can be quantitatively detected by other methods by a mass spectrometer coupled to a high liquid chromatography unit (LC-MS- Coupling) This is the purpose of assigning individual peaks in HPLC chromatography through a mass spectrometer. After performing a first detection in a reference mixture by means of LC-MS coupling, it can be operated by considering the residence time for the peak of the measurement without LC-MS-coupling. Quantitative determination. Alternatively, the HPLC-method can also be used to quantitatively detect oligomeric phenanthrene cation compounds in the mixture, particularly using gel permeation chromatography. In order to improve the separation of the positively chargeable compound, an anionic 15 wetting agent may be added to the solvent (eluent) of the present invention to form an ion pair (ion pair chromatography). An oligomeric ruthenium cation compound having the structure previously described and included in the mixture of the present invention, which can be diazotized in one sequence, and converted to a chemical formula of < in a one-pot reaction. A single 20-membered cation compound of IX> is obtained by forming the reacted diazonium compound onto the oligophenylene cation compound: 36 1313679

其中R1、R2、R4、R5、R6、r7、R8與尺9係具有相 - 同於先前化學通式<I>與<11:>之該低聚吩嗉正離子化 „ 合物所賦予之定義。 該術語” 一鍋法反應”是指低聚吩嗉正離子化合物 $ 之合成可在僅為一單一反應器之内來實施而無須移除 任何中間產物,例如所提及之重氮化合物。本發明在轉 換中間產物至另一反應器時無須進一步基本診斷檢查 之目的不會受到挫敗,換言之,不需乾燥。 1〇 設若該反應可於一適當尺度之單一反應器中發 生,该合成〃仍應視為是一銷法反應,即使實際上是 使用多於一個反應器。 較佳地,反應係使用氮氣來進行,更特別者為氮鹽 馨 或於酸中之亞硝基硫酸,較佳者為諸如氟磷酸、碘酸、 氧漠k之無機酸’最佳者為氫氯酸、硫酸、四敗爛酸以 及其混合物。 合成時,例如更可取此類的藏紅染料來使用,其中 與R9係各自獨立地代表氫、R5代表苯基以 及R7代表nrWr11,其中的R10與R11係各自獨立地具 20 有前述對於該化學通式<V>、<VI>、<乂11>與<^111>中 37 1313679 相同基團所給予定義中之一者,更特別者係為氫與低級 院基。 於本發明混合物中之該低聚吩啳正離子化合物亦 可在一鍋法中使用如前述該化學通式dX〉中的不同的 5 單體吩嗉正離子化合物。 藉此,該重氮化鹽類可在原處來反應於該低聚吩嗉 正離子化合物,並且反應可以在適當的催化劑存在下, 諸如鹼金屬黃原酸鹽、鹼金屬硫氰酸鹽以及鹼金屬硒代 氰酸鹽’以及以及所有上述過渡金屬與他們的25種化 10 合物之存在下來被實施,此25種化合物,諸如元素銅 與其化合物,例如銅(I)-與銅(Π)_鹵化物、氧化銅以及相 關的銅擬_化物、鎳、妃與鐵。該催化劑較佳地係呈粉 末形式。 本發明之在原處方法係為一鋼法,於其中亞硝酸鈉 15 或亞硝基硫酸被予以徐緩地加入至被散浮在無機酸中 的染料’在”有”或’’無”前述之催化劑下,在一增高的溫 度’較佳地在一溫度至少為15°C ,以及特別是在 30-60。(:,所以,繼由分開的先行重氮化,繼而進行反 應來形成低聚吩啳正離子化合物之是不會被實施的。 20 在反應已終止後,反應產物係較佳地被引入至氫氧 化鈉驗液或含鉀之驗液’或者被置入在一重量比小於 1%之硫酸濃度内’以及結果所得之固體被予以過濾出 來。 1313679 根據本發明來製備之方法將以下列實施例來做解 釋: 較佳實施例之詳細說明 製備例1 : 5 1 g的3-胺基-7-N,N-二甲基胺基-2-甲基-5-苯基- 吩嗉正離子氯化物與174 mg的銅粉末被散浮於15 m卜 50 %重量計之四氟硼酸中,並被加熱至65°C。繼之, 一飽和水性之亞硝酸納溶液(570 mg溶於10 ml水)被 予以徐緩地滴加之,接著在此一溫度下另授拌半小時。 10 反應產物被冷卻至室溫,以及反應混合物被導入於一 50%重量計之氩氧化鈉鹼液中。所得的黑色固體被予以 滤出並乾燥之。 產量:520 mg的低聚吩嗉正離子化合物1,其係由 下列所構成: 15 •大約莫耳百分比之8,8'-貳-(Ν,Ν·二甲基胺 基)·3,3'_二甲基.1〇,1〇1_二苯基二聯吩嗉基 -ιο,ιο’-正離子四氟硼酸鹽(化合物<iv>), •大約3〇莫耳百分比之3,8’,8”-參_(N,N-二甲基胺 基>8-甲基-5,10,,10"_三笨基-⑹义^三聯吩嗔 20 _5,1〇’,1〇”'正離子-四氟硼酸鹽(化合物<^出>), •大約15莫耳百分比之3,_n,n二甲基胺基_38,_ 一甲基-8-(N-甲基胺基氧基_1〇,5,_二苯基 39 1313679 _5,7 -一鼠-[2,2 ] —聯吩α秦基-10-正離子-氣化物 (化合物<i>),以及 •大約15莫耳百分比之3,8'-貳-(N,N-二曱基胺 基)-8,3'-二曱基-5,10'-二笨基-7-羥基-[2,2,]二聯 吩嗔基-5,10'-正離子-四氣侧酸鹽(化合物<vi>)。 製備例2 : 1〇§的3-胺基-7-队^二甲基胺基-2-甲基-5-苯基-吩σ秦正離子氣化物以及2.351 g的銅粉末被散浮於1〇〇 ml、50%重量計的四氟硼酸内,以及被加熱至5〇〇c。繼 10 之’一飽和水性亞硝酸鈉溶液(4.164g溶於15 ml水) 被予以徐緩地滴加之,接著在此一溫度下另搜拌丨個小 日τΓ。反應產物被冷卻至室溫,以及反應混合物被導入於 一 50%重量計之氫氧化鈉鹼液中。所得的黑色固體被予 以濾出並乾燥之。 15 產® . 9.8 g的低聚吩喑正離子化合物2,其係由下 列所構成: • 30莫耳百分比之8,8’_貳_(N,N_二甲基胺基)_3,3,_ 二甲基-10,10'-二苯基 _[2,2’]二聯吩嗔基 正離子-四氟硼酸鹽(化合物<iv>), 20 · 莫耳百分比之3,8',8”-三曱基-8,3',3”_參-(N-甲 基胺基)-7"-氧基-1〇,5,,5"-三苯基-5,,10,,5”,7”_四 氩-[2,2’;7’,2”]三聯吩嗉-10-正離子_氣化物(化合 物 <ii> ), 40 1313679 • 15莫耳百分比之3,_n,N-二曱基胺基_3,8,_二甲基 -8-(N-曱基胺基)_7'_氧基-1〇,5,-二苯基_5,,7’-二氫 -[2,2']二聯吩嗉基_10_正離子·氯化物(化合物 <i>),以及 5 •大約15莫耳百分比之8,8,-貳-(N,N-二甲基胺 基)-10,10’-二苯基-3-甲基-[2,2’]二聯吩啳基-ΐ〇,ι〇ι_正離 子-四氟硼酸鹽(化合物〇>)。 第一個化合物<vi>可藉由具有一聚糊精管柱(置於 咼氣酸中)之凝膠渗透而自混合物中被予以分離出來。 10 化合物<vi>的純度大於90 %。 製備例3 : 1.5 g的3-胺基-7-N,N-二曱基胺基-2-甲基-5-苯基_ 吩嗉正離子氣化物,1.5 g的3-胺基-7-N,N-二乙基胺基 -5-苯基-吩嗉正離子氣化物以及59〇 mg的銅粉末被散 15 浮於100 ml、50%重量計的硫酸内,以及被加熱至 50°C。繼之,一飽和水性亞硝酸鈉溶液(1 226g溶於1〇 ml水)被予以徐緩地滴加之,接著在此一溫度下另搜拌 1個小時。反應產物被冷卻至室溫,以及反應混合物被 導入於一 50%重量計之氫氧化鈉驗液中。所得的黑色固 20 體被予以濾出並乾燥之。 產量:0_8 g的低聚吩唼正離子化合物3,其係由下 列所構成: 41 1313679 • 45莫耳百分比之8'-(N,N-二甲基胺基)-8-N,N-二 甲基胺基-10,10,-二苯基_[2,2']二聯吩嗉基 -10,10'-正離子-硫酸鹽(化合物<ix>), • 15莫耳百分比之8,3'-貳-(N,N二乙基胺基)-8’-甲 5 基氧基-l〇,5i-二苯基-5,,7'-二氫-[2,2,]二聯吩 嗉基-10-正離子-硫酸氫鹽(化合物<出> ), • 15莫耳百分比之8,3’,3"-參-(N,N-二甲基胺基) -7"-氧基-1〇,5',5"-三苯基-5,,10,,5",7',-四氫 -[之,〕1;?1,”]三聯吩嗉-10-正離子-硫酸氫鹽(化合 10 物<xi>),以及 •大約15莫耳百分比之3,8,-貳_(N,N-二乙基胺 基)·7-羥基-5,10,-二苯基_[2,2,]二聯吩嗉基-6,l〇|-正離子-硫酸鹽(化合物<v>^)。 因此所得之本發明吩嗉正離子化合物係獨自地或 疋組合以光澤劑或潤座劑而被添加至一銅電解液,更特 別的是加入至一酸(較佳為硫酸)之酸浴中。 為允許一銅層之電解沉積在一工作件之上,後者與 鍍浴一起接觸陰極。該鍍浴包含酮離子以及本發明的低 裝吩嗉正離子化合物。為金屬沉積,一繼而被予以引發 20 之電流密度係流動於該工作件與該陰極之間。 銅電解質的基本組成物可於一廣範圍之内做改 變。一般而言,一含有溶液之酸性水性銅離子,其係具 有下列所使用之組成物: 42 1313679 5水合硫酸銅 較佳為 濃硫酸 較佳為 鼠離子 0.01-0.25 g/1 較佳為 0.05-0.14 g/1 除硫酸銅之外,至少於一部份也可使用其他銅鹽。 亦可將硫酸部分地或全部地被予以取代以氟硼酸、甲石黃 酸或其他酸。氣離子亦可以以鹼金屬氯化物(例如,氯 化鈉),或呈分析級純度形式之氫氣酸來添加。設若添 加物中含有_素離子,則所添加之氣化鈉可以部分地或 全部地被予以散浮。 0.00005- 0.1 之一濃度被添加至鍍浴中 10 20-300 g/1 180-220 g" 50-350 g/1 50-90 g/1 本發明之低聚吩嗪正離子化合物 衩佳地係 鑛浴中可進一步包含現有的光澤劑、均化劑或潤渔 劑。為了得到展現出就物理性質之明亮銅沉積物,至 ^一水可溶解之硫化物以及-包含高分子量化合物之 氧化物可被添加至本案的酸浴中。亦可使用如含有硫化 物之氮化物和/或聚氮化合物之另外添加物。 立即可使用之鍍浴係含有下列濃声鉻 個別成份: “度範圍内的這些 一般氧化物包含, 43 15 1313679 高分子量化合物 0.005 -20g/l 較佳為 0.01 -5g/l 一般水可溶之有機硫化物 0.0005-0.4g/l 較佳為 0.001 -0.15g/l 有些具有高分子量化合物之可使用氧化物係描述於 後:羧基甲基纖維素、壬基苯基-聚二醇醚、辛烷二醇-貳(聚二醇醚)、辛基聚二醇醚、油酸聚二醇酯、聚乙二 醇-聚丙二醇(嵌段或共聚合產物)、聚乙二醇、聚乙二醇 5 -二甲基醚、聚丙二醇、聚乙烯醇、β-苯酚聚二醇醚、硬 酯酸聚二醇酯、十八烷酮聚二醇酯。 一些硫化物係說明如下:3-(苯基併噻唑基-2-硫)-丙基磺酸之鈉鹽、3-酼基丙烷-1-磺酸之鈉鹽、伸乙基二 硫二丙基磺酸之鈉鹽、貳-(ρ-硫併苯基)-二硫化物之二 10 納鹽、戴i-(c〇-硫併本基)-二硫化物之二納鹽、武-(c〇-硫併 丁基)-二硫化物之二鈉鹽、貳-(ω-硫基羥基丙基)-二硫化 物之二鈉鹽、C-(〇>-硫併丙基)-二硫化物之二納鹽、貳 -(ω -硫併丙基)-二硫化物之二納鹽、武-(ω -硫併丙基)-二 硫化物之二鈉鹽、0-乙基-二硫碳酸-(ω-硫併丙基)-酯之 15 鉀鹽、巯基乙酸、0-乙基-貳-(ω-硫併丙基)-酯之二鈉鹽 以及硫代填酸-參-(ω-硫併丙基)-自旨之三納鹽。針對水溶 解度,相關的官能性基團已被予以併入。 包含氮之硫化物,更為特別的是含有硫的氮化物, 44 1313679 較佳的為硫脲衍生物和/或聚氮化合物,例如聚醯胺與 聚胺,可以下列濃度來使用: 0.0001 - 0.50 g/1Wherein R1, R2, R4, R5, R6, r7, R8 and ruthenium 9 have the same oligomeric ruthenium cation cation as the previous chemical formula <I> and <11:> The definition given. The term "one-pot reaction" means that the synthesis of the oligomeric porphyrin cation compound $ can be carried out in only a single reactor without removing any intermediates, such as those mentioned. Diazo Compounds. The present invention does not require frustration for the purpose of converting the intermediate product to another reactor without further basic diagnostic inspection, in other words, no drying is required. 1 If the reaction can occur in a single reactor of a suitable size The synthetic hydrazine should still be considered as a one-shot reaction, even though more than one reactor is actually used. Preferably, the reaction is carried out using nitrogen, more particularly nitrogen sulphate or nitrous acid in acid. The base sulfuric acid, preferably an inorganic acid such as fluorophosphoric acid, iodic acid or oxygen desert k, is preferably hydrochloric acid, sulfuric acid, tetrahydroacid, and a mixture thereof. For synthesis, for example, such a red color is preferred. Dyes to be used, which are independent of the R9 system Representing hydrogen, R5 represents a phenyl group, and R7 represents nrWr11, wherein R10 and R11 are each independently 20 having the aforementioned formulas for the chemical formulas <V>, <VI>, <乂11> and <^111>中 37 1313679 One of the definitions given by the same group, more particularly hydrogen and lower grades. The oligomeric porphyrin cation compound in the mixture of the invention may also be used in a one-pot process as described above a different 5-monomer ruthenium cation compound in the chemical formula dX>. Thereby, the diazotized salt can be reacted in situ to the oligomeric porphyrin cation compound, and the reaction can be carried out in a suitable catalyst In the presence of, for example, an alkali metal xanthate, an alkali metal thiocyanate, and an alkali metal selenocyanate, and all of the above transition metals and their 25 compounds are present, 25 Compounds such as elemental copper and its compounds, such as copper (I)- and copper (yttrium)-halides, copper oxide and related copper-based compounds, nickel, ruthenium and iron. The catalyst is preferably in powder form. The original method of the invention is a steel In which the sodium nitrite 15 or nitrosylsulfuric acid is slowly added to the dye which is dispersed in the inorganic acid, under the catalyst of "there" or "none", at a higher temperature 'better' The ground is at a temperature of at least 15 ° C, and especially at 30-60. (:, therefore, the subsequent diazotization by separate, followed by the reaction to form the oligo-phenoxy cation compound is not carried out. 20 After the reaction has been terminated, the reaction product is preferably introduced to The sodium hydroxide test or the potassium-containing test solution 'or is placed in a sulfuric acid concentration of less than 1% by weight' and the resulting solid is filtered out. 1313679 The method of preparation according to the present invention will be carried out as follows EXAMPLES Explanation: DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Preparation Example 1: 5 1 g of 3-amino-7-N,N-dimethylamino-2-methyl-5-phenyl-phene The ionic chloride and 174 mg of copper powder were dispersed in 15 m of 50% by weight of tetrafluoroboric acid and heated to 65 ° C. Subsequently, a saturated aqueous sodium nitrite solution (570 mg dissolved) 10 ml of water) was slowly added dropwise, and then mixed at this temperature for another half an hour. 10 The reaction product was cooled to room temperature, and the reaction mixture was introduced into a 50% by weight sodium arsenate lye. The obtained black solid was filtered off and dried. Yield: 520 mg of oligomeric fluorene Positive ion compound 1, which is composed of the following: 15 • 8,8'-贰-(Ν,Ν·dimethylamino)·3,3'-dimethyl.1〇, about a molar percentage 1〇1_diphenyldibiphenyl-methane, ιο'-positive ion tetrafluoroborate (compound <iv>), • 3,8',8"-parameters of about 3 〇% (N,N-dimethylamino group>8-methyl-5,10,,10"_三笨基-(6)义^三联”20 _5,1〇',1〇”' cation-four Fluoroborate (compound <^>), • approximately 15 mole percent of 3, _n, n dimethylamino _38, _ monomethyl-8-(N-methylaminooxy _ 1〇,5,_diphenyl 39 1313679 _5,7-one mouse-[2,2 ]-bipheno-α-methyl-10-n-ion-vapor (compound <i>), and • approximately 15 mo 3,8'-贰-(N,N-didecylamino)-8,3'-dimercapto-5,10'-diphenyl-7-hydroxy-[2,2,] Bis-indenyl-5,10'-n-iono-tetra-gasoside (compound <vi>). Preparation 2: 3-amino-7-team^dimethylamino group of 1〇§ 2-methyl-5-phenyl-phenoxide yttrium cation gas and 2.551 g of copper powder were scattered at 1〇〇 Ml, 50% by weight of tetrafluoroboric acid, and heated to 5 ° C. Following 10 'saturated aqueous sodium nitrite solution (4.164 g dissolved in 15 ml of water) was slowly added dropwise, then At this temperature, another small day was added. The reaction product was cooled to room temperature, and the reaction mixture was introduced into a 50% by weight sodium hydroxide lye. The resulting black solid was filtered off and dried. 15 Product® . 9.8 g of oligo-glycol cation compound 2, which consists of: • 30 mol% of 8,8'_贰_(N,N-dimethylamino)_3,3 , _ dimethyl-10,10'-diphenyl _[2,2']dibiphenyl cation-tetrafluoroborate (compound <iv>), 20 · percentage of moles 3,8 ',8"-tridecyl-8,3',3"_para-(N-methylamino)-7"-oxy-1〇,5,,5"-triphenyl-5,, 10,,5",7"_tetra-argon-[2,2';7',2"]triphenyl--10-positron_vapor (compound <ii>), 40 1313679 • 15% molar percentage 3,_n,N-didecylamino-3 3,8,-dimethyl-8-(N-decylamino)_7'-oxy-1〇,5,-diphenyl_5, , 7'-dihydro-[2,2']diphenyl sulfonyl _10_ cation chloride (compound <i>), and 5 • 8,15,-贰- (N,N-dimethylamino)-10,10'-diphenyl-3-methyl-[2,2']dibiphenyl-anthracene, ι〇ι_ cation-tetrafluoro Borate (compound 〇 >). The first compound <vi> can be obtained by placing a polydextrin column (placed with helium acid) The gel is infiltrated and separated from the mixture. 10 The purity of the compound <vi> is greater than 90%. Preparation 3: 1.5 g of 3-amino-7-N,N-didecylamino group- 2-methyl-5-phenyl_phenanthridine cation gas, 1.5 g of 3-amino-7-N,N-diethylamino-5-phenyl-phene cation cation and 59 〇mg of copper powder is floated in 100 ml, 50% by weight of sulfuric acid, and heated to 50 ° C. Subsequently, a saturated aqueous sodium nitrite solution (1 226 g dissolved in 1 ml of water) was It was slowly added dropwise, and then further mixed for 1 hour at this temperature. The reaction product was cooled to room temperature, and the reaction mixture was introduced into a 50% by weight sodium hydroxide test solution. 20 The body was filtered off and dried. Yield: 0-8 g of oligo-fluorene cation cation compound 3, which consisted of the following: 41 1313679 • 45-mole percent of 8'-(N,N-dimethyl Amino)-8-N,N-dimethylamino-10,10,-diphenyl-[2,2']diphenyl--10,10'-positive-sulfate (compound <;ix>), • 15% of the percentage of 8,3'-贰-(N N-diethylamino)-8'-methyl-5-oxyl-l,5i-diphenyl-5,,7'-dihydro-[2,2,]diphenylen-10-yl Ion-hydrogen sulfate (compound <out>), • 15 mole percent of 8,3',3"-para-(N,N-dimethylamino)-7"-oxy-1〇 ,5',5"-triphenyl-5,,10,,5",7',-tetrahydro-[,,1];?1,"]triphenyl--10-n-ionium-hydrogen sulfate (Compound 10 <xi>), and • approximately 15 mole percent of 3,8,-贰_(N,N-diethylamino)·7-hydroxy-5,10,-diphenyl _ [2,2,]dithiophene-6,l〇|-positive ion-sulfate (compound <v>^). Therefore, the obtained cation-positive compound of the present invention is added to a copper electrolyte by a gloss agent or a emollient agent alone or in combination, more particularly, in an acid bath of an acid (preferably sulfuric acid). . To allow electrolytic deposition of a copper layer over a workpiece, the latter contacts the cathode with the plating bath. The plating bath contains ketone ions as well as the low-loaded ruthenium cation compound of the present invention. For metal deposition, a current density that is subsequently induced 20 flows between the workpiece and the cathode. The basic composition of the copper electrolyte can be varied over a wide range. In general, an acidic aqueous copper ion containing a solution having the following composition: 42 1313679 Preferably, the copper sulfate hydrate is preferably concentrated sulfuric acid, preferably 0.01-0.25 g/1, preferably 0.05-. 0.14 g/1 In addition to copper sulphate, other copper salts may be used in at least a portion. Sulfuric acid may also be partially or completely substituted with fluoroboric acid, methicillin or other acids. The gas ions may also be added as an alkali metal chloride (e.g., sodium chloride) or as a hydrogen acid in analytical grade purity. If the addition contains _ 素 ions, the added sodium sulphide may be partially or completely dispersed. 0.00005-0.1 One concentration is added to the plating bath 10 20-300 g/1 180-220 g" 50-350 g/1 50-90 g/1 The oligophenazine cation compound of the present invention is excellent in the system The mineral bath may further comprise an existing glossing agent, leveling agent or lubricant. In order to obtain a bright copper deposit exhibiting physical properties, a sulfur-soluble sulfide and an oxide containing a high molecular weight compound may be added to the acid bath of the present invention. Additional additives such as sulfide-containing nitrides and/or polynitrogen compounds may also be used. Immediately available plating baths contain the following concentrated chrome components: "The general oxides in the range of degrees include, 43 15 1313679 high molecular weight compounds 0.005 -20g / l preferably 0.01 -5g / l generally water soluble The organic sulfide is 0.0005-0.4 g/l, preferably 0.001-0.15 g/l. Some oxides having a high molecular weight compound are described as follows: carboxymethylcellulose, nonylphenyl-polyglycol ether, xin Alkanediol-indole (polyglycol ether), octyl polyglycol ether, polyglycol oleate, polyethylene glycol-polypropylene glycol (block or copolymerized product), polyethylene glycol, polyethylene Alcohol 5-dimethyl ether, polypropylene glycol, polyvinyl alcohol, β-phenol polyglycol ether, polyglycolic acid polyglycol ester, stearyl ketone polyglycol ester. Some sulfides are described as follows: 3-( Sodium salt of phenyl thiathiazolyl-2-thio)-propyl sulfonic acid, sodium salt of 3-mercaptopropane-1-sulfonic acid, sodium salt of ethyl dithiodipropyl sulfonic acid, 贰-( Two 10 nano-salts of ρ-thio-phenyl)-disulfide, di-sodium salt of i-(c〇-thio-benphin)-disulfide, wu-(c〇-thio-butyl)- Disulfide disodium salt , 贰-(ω-thiohydroxypropyl)-disulfide disodium salt, C-(〇>-thiopropyl)-disulfide di-sodium salt, 贰-(ω-thio-propionate Di-sodium salt of disulfide, disodium salt of wu-(ω-thiopropyl)-disulfide, 0-ethyl-dithiocarbonate-(ω-thiopropyl)-ester 15 potassium salt, thioglycolic acid, 0-ethyl-indole-(ω-thiopropyl)-ester disodium salt and thiolated acid-para-(ω-thio-propyl)- Salts. Related functional groups have been incorporated for water solubility. Nitrogen containing sulfides, more particularly sulfur containing nitrides, 44 1313679 preferably thiourea derivatives and/or polynitrogen Compounds such as polyamines and polyamines can be used in the following concentrations: 0.0001 - 0.50 g/1

較佳為 0.0005 -0·04 gA 較佳之含有硫的氮化物係說明於後續:N-乙醯基硫 脲、N-三氟化乙醯基硫脲、N-乙基硫脲、N-氰基乙醯基 5 硫脲、N-烯丙基硫脲、〇-曱苯基硫脲、N,N’-伸丁基硫 脲、噻唑烷硫醇(2)、4-噻唑啉硫醇(2)、咪唑啉硫醇 (2)(N;N’_伸乙基硫脲)、4-甲基-2-嘧啶硫醇、2-硫脲嘧 α定、糖精之鈉鹽。 較佳的聚氮化合物例示於後續:聚乙烯亞胺、聚乙 10 烯醯亞胺、聚丙醯酸亞醯胺、聚丙烯亞胺、聚丁烯亞胺、 Ν-甲基聚乙烯亞胺、Ν-乙醯基聚乙烯亞胺、Ν-丁基聚乙 稀亞胺。 為製備該鍍浴,個別的成分被加入至該基本組成物 中。鍍浴之操作條件可更特別地以下列而被設定: 15 pH 值: <1Preferably, it is 0.0005 - 0·04 gA. Preferred sulfur-containing nitride is described as follows: N-acetylthiourea, N-ethylidene sulfide, N-ethylthiourea, N-cyanide Ethyl thiol 5 thiourea, N-allyl thiourea, hydrazine- phenyl thiourea, N, N'-butyl thiourea, thiazolidine thiol (2), 4-thiazoline thiol ( 2) Imidazoline thiol (2) (N; N'_ethyl thiourea), 4-methyl-2-pyrimidinyl mercaptan, 2-thiourea pyridine, sodium salt of saccharin. Preferred polynitrogen compounds are exemplified in the following: polyethyleneimine, polyethylenimine, polyacrylamide, polypropyleneimine, polybuteneimide, fluorene-methylpolyethyleneimine, Ν-Ethylene-based polyethyleneimine, hydrazine-butylpolyethyleneimide. To prepare the plating bath, individual ingredients are added to the base composition. The operating conditions of the plating bath can be more specifically set as follows: 15 pH: <1

溫 度: 15°C-50°C,較佳為 20°C-40°C 陰極電流密度 0.5-12 A/dm2,較佳為3-7 A/dm2 電解質可以經由一強烈的流體流動被予以攪拌並 且可能地注入以乾淨的空氣,藉此使電解質的表層受到 20 強力的攪拌。此舉係在使最接近於電極之物質的轉換達 最大化並且容許有較高的電流密度。陰極的移動亦促進 了物質轉換於該表層的各處。由電極所增高之對流與移 45 1313679 動係允許於去達成持續的、擴散受控的沉積。移動可以 是在水平向或是垂直向和/或藉由震動所引起。組合以 空氣注入會特別有效。 為了保持銅含量之恆定’可藉由分解銅電極來使銅 5 被予以電化地再補足。用於陽極的銅可以是含有磷(〇 〇2 至 0_07 %)之銅物 封在一濾袋 中。也有可能使用由鍍鈦或其他鍍層所做成之置入陽 極。在現在習知技術的生產線上,在線上作業時,工作 件是以垂直向或水平向被塗鑛。 10 有必要時,可以將用來攔住機械性的和/或化學性 的殘餘物的過濾器置入電解循環中。 本發明的銅電解質係完美地適合於製造出一裝飾 沉積物。它可以進一步地用在電解地填充於印刷電路榜 内的盲微孔。此構成了一未來導向技術,以使製造晶片 從事者特別疋在薄膜電路軌跡方面,所提高之可信賴 度係可在使用銅套技術下被達成。在一類似方法下,本 發明之銅電解質係提供一簡練確切的解決之道,來將電 路、構產生在積體電路製造期間所提供以凹槽(溝槽與 孔)之半導體基材(晶圓)表面上。使用本發明之銅鑛方 幾乎不變、厚度為3〇(平面)的層係於晶圓的整個 表面上被達致,個別的凹槽具有一高寬深比(1: 1〇),藉 此,諸如此類之凹槽(盲微孔)被銅所填充。 於研讀下列方法實施例與其伴隨圖式後,將使本發 明更被了解,其令: 圖1 .顯示一根據方法實施例6(未使用本發明之混 46 1313679 合物)進行銅鍍後的一印刷電路板内的盲孔的橫截面; 圖2 :顯示一根據方法實施例7(使用本發明之混合 物)進行銅鍍後的一印刷電路板内的盲孔的橫截面。 方法實施例1 (比較測試): 5 在一具有可溶、含銅陽極之磷的電解槽中,一具有 下列組成物之銅浴被使用之: 200 g/Ι 五水合硫酸銅(CuS04 · 5H20) 6〇 g/Ι 濃硫酸. 0.12 gM 氣化鈉 10 下列之光澤劑被予以添加之: 1·5 g/Ι 聚丙烯乙二醇(800 Da (dalton)), 0·006 g/1 3-巯基丙烷-1·磺酸之鈉鹽 在一電解溫度為25°C以及在一電流密度為4 A/dm2下,一均一、光亮、稍微朦朧之沉積物於一電刷 15 黃銅片上被獲得。 方法實施例2 (比較測試): 依據方法實施例1,5 mg/1的7 _二甲基胺基_3-氣 -5-苯基-吩嗉正離子氯化物(根據jp 6〇_〇56〇86 a所給予 之s兒明來製備)進一步地被添加至電解質中。當,,銅,,在 20方法實施例1所示之條件下沉積時,所獲得的銅層具有 一稍微改善之外觀。在本實施例中,該黃銅片具有一較 光壳之外觀但在邊緣處顯出燒焦狀,係因高電流密度在 此處發生。 方法實施例3 (比較測試): 25 5 mg/l的聚-(7-二甲基胺基-5-苯基-吩嗪正離子)硫 47 1313679 酸酯[具有一大約為8000 Da之平均莫耳重]係依據方法 實施例1而被予以進一步加入至電解質中。所產生之化 合物係類似於DE-AS 2039831,第7攔,第2行以及前述 所給予之說明。當”銅”在方法實施例1所示之條件下予 5 以沉積時,於一電刷黃銅片上所獲得的銅沉積物具有良 好的品質。該沉積物展現出一致的亮度無燒焦。刷線幾 乎看不見。此係表示該銅電解質有一定的均勻化效用。 方法實施例4 : 4 mgA 的本發明 <iii>、<vi>、<xi> 以及 <xii> 二聚或 10 三聚化合物之混合物[具有一大約為8000 Da(627-913 Da)之平均莫耳重]係依據方法實施例1而被予以進一 步加入至電解質中。當”銅”在方法實施例1所示之條件 下予以沉積後,於一電刷黃銅片上所獲得的銅沉積物具 有一非常良好之外觀。該沉積物展現出高亮度無燒焦。 15 刷線現在完全看不見。此係表示該銅電解質有優異的均 勻化效用。 方法實施例5 : 僅有 3 mg/1 的本發明 <xiii>、<xiv>、<xv>、<xvi> 以及<xvii>二聚或三聚氣化物之混合物[具有一大約為 20 8000 Da(627-913 Da)之平均莫耳重]係依據方法實施例1 而被予以進一步加入至電解質中。當”銅”在方法實施例 1所示之條件下予以沉積後,該黃銅片具有一極度良好 之外觀。該沉積物是極為光亮的並如鏡面般。銅片無顯 示燒焦。刷線絕對看不見。此係表示該銅電解質有優異 25 的均勻化效用縱然混合物的數量已經被予以減低。 48 1313679 實施例1至5之結果所可能顯示的是,含有單體吩嗪 正離子化合物之氯化物所構成之混合物僅具有一低下 的均勻化效用。而聚合的吩嗉正離子化合物具有一良好 效用。 5 不論如何,就實施例4與實施例5所顯示的,此效用 可以在使用本發明之二聚或三聚混合物時來被予以明 顯地提昇,實際上,所明顯改善之效用係為藉由將氣原 子併入於溶液内。在本案中,有可能將濃度做相當性地 減低,但仍然獲得優異的結果。 10 方法實施例6(比較測試): 在塗鍍一具有盲微孔之印刷電路板時,具下列組成 物之銅鍍浴係被使用於一具有可溶、含銅陽極之磷之電 解槽中: 150 g/Ι 五水合硫酸銅(CuS04 _ 5H20) 15 200 g/1 濃硫酸 0.05 g/1 氣化鈉 下列之光澤劑被予以添加之: 0.5 g/Ι 聚丙烯乙二醇(820 Da (dalton)), 0.005 g/1 貳-(ω-硫并丙基)-二硫化物之二鈉鹽 20 在一電解溫度為25°C以及在一電流密度為 1 A/dm2下,一稍微朦朧之沉積物在114分鐘的暴露時間後 在一具有小型盲孔(盲微孔)、預先強化之8 μιη印刷電路 板上被予以獲得,盲孔的寬度為110 μιη、深度為60 μιη 並且幾乎未被銅所填充。圖1所顯示為該盲孔的橫截面。 方法實施例7 : 49 25 1313679 4 mgd 的本發明 <iii>、<vi>、<xi> 以及 <xii>二聚或 三聚化合物之混合物[具有一大約為8000 Da(627-913 Da)之平均莫耳重]係依據實施例6而被予以進一步加入 至電解質中。當”銅”在方法實施例6所示之條件下予以 5 沉積後,於印刷電路板上所具之外觀有被改善。寬度為 110 μιη、深度為60 μιη的盲孔係完全地與選擇性地被銅 所填充。在銅鍍操作後,不再有凹槽被視出。就所沉積 出之銅的總數量而言,是低的。圖2係顯示此類銅鍍盲 孔的一被予以拋光的橫截面。 10 對習知技術所知之用於盲孔之電解銅鍵而言,此一 結果是一種重大的改善,因為這些盲孔可以以一較好的 方式被予以填充。此一道理即在實質地改善銅鍍浴(由 本發明之低聚吩嗉正離子化合物之混合物所獲得)的均 勻化效用。再者,就沉積在一盲孔壁面上的銅以及被該 15 孔所阻斷的銅層之間的連結而言,其可信賴度會比使用 傳統銅鍍技術更加良好。又,使用依據本發明之混合物 時,於熱銲錫衝擊測試期間内,於兩層金屬層之間無離 層被偵測到,然而在這些條件下使用已知的混合物時, 會有導致此類離層之危險。 20 需了解的是,在此所述之實施例與具體例係僅為例 示之目的,以及在參照與組合以描述於本案說明書中之 特徵後而啟發熟悉該項之人士來做出的各種修飾與變 化,皆應被涵蓋於本發明所述之精神與範疇以及所附的 申請專利範圍之内。於此所引用之所有的發表、專利與 25 專利申請案茲被予以合併於此以作為參考。 50 1313679 【圖式簡單說明3 圖1 :顯示一根據方法實施例6(未使用本發明之混 合物)進行銅鍍後的一印刷電路板内的盲孔的橫截面; 圖2 :顯示一根據方法實施例7(使用本發明之混合 5 物)進行銅鍍後的一印刷電路板内的盲孔的橫截面。 【圖式之主要元件代表符號表】Temperature: 15 ° C - 50 ° C, preferably 20 ° C - 40 ° C Cathode current density 0.5-12 A / dm 2 , preferably 3-7 A / dm 2 electrolyte can be stirred through a strong fluid flow It is also possible to inject clean air, thereby subjecting the surface layer of the electrolyte to 20 strong agitation. This is done to maximize the conversion of the material closest to the electrode and to allow for a higher current density. The movement of the cathode also promotes the conversion of the substance throughout the surface layer. Convection and shifting by the electrodes 45 1313679 The system is allowed to achieve continuous, diffusion-controlled deposition. Movement can be caused either horizontally or vertically and/or by vibration. Combinations with air injection are particularly effective. In order to keep the copper content constant, the copper 5 can be electrically replenished by decomposing the copper electrode. The copper used for the anode may be a copper containing phosphorus (〇2 to 0_07%) enclosed in a filter bag. It is also possible to use an anode made of titanium or other plating. In the production line of the prior art, when working on the line, the workpiece is coated in a vertical or horizontal direction. 10 If necessary, a filter to contain mechanical and/or chemical residues can be placed in the electrolysis cycle. The copper electrolyte of the present invention is perfectly suited for the manufacture of a decorative deposit. It can be further used in blind micropores that are electrolytically filled in the printed circuit board. This constitutes a future-oriented technology that allows wafer makers to be particularly concerned with thin film circuit traces, and the increased reliability can be achieved using copper sleeve technology. Under a similar method, the copper electrolyte of the present invention provides a concise and definitive solution for generating a semiconductor substrate (grooves and holes) provided by the circuit during the fabrication of the integrated circuit. Round) on the surface. The layer of the copper ore which is almost constant and has a thickness of 3 〇 (planar) is obtained on the entire surface of the wafer, and the individual grooves have a high aspect ratio (1:1 〇). Thus, the grooves (blind micro holes) such as these are filled with copper. The present invention will be further understood by studying the following method examples and the accompanying drawings, which illustrate: Figure 1. shows a copper plated process according to Method Example 6 (without the use of the blend 46 1313679 compound of the present invention) A cross section of a blind hole in a printed circuit board; Fig. 2: shows a cross section of a blind hole in a printed circuit board after copper plating according to method embodiment 7 (using the mixture of the invention). Method Example 1 (Comparative Test): 5 In a cell having a soluble, copper-containing anode phosphorus, a copper bath having the following composition was used: 200 g/Ι copper sulfate pentahydrate (CuS04 · 5H20) 6〇g/Ι concentrated sulfuric acid. 0.12 gM vaporized sodium 10 The following brighteners were added: 1·5 g/Ι Polypropylene glycol (800 Da (dalton)), 0·006 g/1 3 - Sodium decylpropane-1.sodium sulfonate salt at a temperature of 25 ° C and a current density of 4 A / dm 2 , a uniform, bright, slightly sloppy deposit on a brush 15 brass sheet obtain. Method Example 2 (Comparative Test): According to Method Example 1, 5 mg/1 of 7-dimethylamino-3-poly-5-phenyl-phene-anthracene chloride (according to jp 6〇_〇) 56 〇 86 a, which was prepared by the singer, was further added to the electrolyte. When, copper, was deposited under the conditions shown in Method Example 1, the copper layer obtained had a slightly improved appearance. In the present embodiment, the brass sheet has an appearance of a lighter shell but exhibits a burnt shape at the edges, which occurs here due to a high current density. Method Example 3 (comparative test): 25 5 mg/l poly-(7-dimethylamino-5-phenyl-phenazine cation) sulphur 47 1313679 acid ester [having an average of about 8000 Da Mohility] was further added to the electrolyte according to Method Example 1. The resulting compound is similar to that described in DE-AS 2039831, 7th, 2nd, and the foregoing. When "copper" was deposited under the conditions shown in the method example 1, the copper deposit obtained on a brushed brass sheet was of good quality. The deposit exhibited consistent brightness without charring. The brush line is almost invisible. This means that the copper electrolyte has a certain homogenization effect. Method Example 4: 4 mgA of the present invention <iii>, <vi>, <xi> and <xii> a mixture of dimeric or 10-trimeric compounds [having a large approximately 8000 Da (627-913 Da) The average molar weight of the substrate was further added to the electrolyte according to Method Example 1. When "copper" was deposited under the conditions shown in Method Example 1, the copper deposit obtained on a brushed brass sheet had a very good appearance. The deposit exhibited high brightness without charring. 15 The brush line is now completely invisible. This indicates that the copper electrolyte has an excellent homogenization effect. Method Example 5: a mixture of the present invention <xiii>, <xiv>, <xv>, <xvi> and <xvii> dimerization or trimerization of only 3 mg/1 [having one An average molar weight of about 20 8000 Da (627-913 Da) was further added to the electrolyte according to Method Example 1. When "copper" was deposited under the conditions shown in the method example 1, the brass sheet had an extremely good appearance. The deposit is extremely bright and mirror-like. The copper sheet showed no charring. The brush line is absolutely invisible. This indicates that the copper electrolyte has an excellent homogenization effect of 25 even though the amount of the mixture has been reduced. 48 1313679 It may be shown by the results of Examples 1 to 5 that the mixture of chlorides containing the monomeric phenazine cation compound has only a low homogenization effect. The polymerized ruthenium cation compound has a good effect. 5 In any case, as shown in Example 4 and Example 5, this utility can be significantly improved when using the dimeric or trimeric mixture of the present invention, in fact, the significantly improved utility is A gas atom is incorporated into the solution. In this case, it is possible to reduce the concentration considerably, but still obtain excellent results. 10 Method Example 6 (Comparative Test): When plating a printed circuit board having blind micropores, a copper plating bath having the following composition was used in an electrolytic cell having a soluble copper anode containing phosphorus. : 150 g/Ι Copper sulfate pentahydrate (CuS04 _ 5H20) 15 200 g/1 Concentrated sulfuric acid 0.05 g/1 Sodium vapor The following brighteners are added: 0.5 g/Ι Polypropylene glycol (820 Da ( Dalton)), 0.005 g/1 贰-(ω-thiopropyl)-disulfide disodium salt 20 at a temperature of 25 ° C and a current density of 1 A/dm 2 The deposit was obtained after a 114 minute exposure time on a 8 μιη printed circuit board with small blind vias (blind microvias) with a width of 110 μm and a depth of 60 μm and almost no Filled with copper. Figure 1 shows the cross section of the blind hole. Method Example 7: 49 25 1313679 4 mgd of the present invention <iii>, <vi>, <xi> and <xii> a mixture of dimeric or trimeric compounds [having a large approximately 8000 Da (627- The average molar weight of 913 Da) was further added to the electrolyte according to Example 6. When "copper" was deposited under the conditions shown in Method Example 6, the appearance on the printed circuit board was improved. A blind hole system having a width of 110 μm and a depth of 60 μm is completely and selectively filled with copper. After the copper plating operation, no grooves are seen. It is low in terms of the total amount of copper deposited. Figure 2 shows a polished cross section of such a copper plated blind hole. 10 This result is a significant improvement over the electrolytic copper keys for blind holes known in the prior art, as these blind holes can be filled in a better manner. This rationale is to substantially improve the homogenization effect of the copper plating bath (obtained from the mixture of the oligomeric porphyrin cation compounds of the present invention). Furthermore, the reliability of the copper deposited on the wall of a blind hole and the copper layer blocked by the 15 hole is better than that of the conventional copper plating technique. Moreover, when the mixture according to the invention is used, no separation layer is detected between the two metal layers during the hot solder impact test, however, when a known mixture is used under these conditions, such a The danger of separation. It should be understood that the embodiments and specific examples described herein are for illustrative purposes only, and that various modifications may be made by those skilled in the And variations are intended to be included within the spirit and scope of the invention and the scope of the appended claims. All of the publications, patents and 25 patent applications cited herein are incorporated herein by reference. 50 1313679 [Simple description of the drawing 3 FIG. 1 : shows a cross section of a blind hole in a printed circuit board after copper plating according to method embodiment 6 (the mixture of the invention is not used); FIG. 2 : shows a method according to the method Example 7 (using the hybrid 5 of the present invention) was used to perform a cross section of a blind hole in a printed circuit board after copper plating. [The main components of the diagram represent the symbol table]

5151

Claims (1)

1313679- 第92135371號專利申請案申請專利範圍修正本98.03.23 公告本拾、中請專利範圍:㈣月》〉日修正本 1. 一種低聚吩啳正離子化合物之混合物,其含有至少一選 自於包含下列的群組中之吩嗉正離子化合物: a)含有具有下列化學通式&lt;1&gt;的二單體單元之化合 5 物:1313679- Patent application No. 92135371 Patent application scope amendment 98.03.23 Announcement, the scope of patent application: (four) month 》 〉 day revision 1. A mixture of oligomeric phenanthrene cation compounds, which contains at least one choice From the cation cation compound contained in the following group: a) a compound 5 containing a dimer monomer unit having the following chemical formula &lt;1&gt;: (A·〉 (A-) 以及 b)含有具有下列化學通式&lt;II&gt;的三單體單元之化 合物:(A·> (A-) and b) a compound containing a tri-monomer having the following chemical formula &lt;II&gt;: 10 (Α·) (Α‘) 與進一步之低聚吩啳正離子化合物, 其中,在上述化學通式&lt;1&gt;與&lt;11&gt;中, 結構單元 n(r5/5V5&quot;)cc(r4/4'/4I')c(r3/3V3&quot;)具有下列化 學通式&lt;1113&gt;或&lt;11113&gt;當中之一者: N ^ 丫 \r3/373' r5/5V5m R4/4V4'' 52 15 1313679 (j^5/575&quot; p4/4V4M 其中進一步地 Rl、R2、R3、R4、R6、R7、R8、R9、R1’、R2’、R3’、R4,、 R6'、R7'、R8,、R9'、R1’、R2 ,、R3”、R4 '、R6 '、R7 ,、R8,' 5 以及R9&quot;各自分別地具有一選自於包含下列的群組中的 意義:氫、鹵素、胺基、OH、CN、SCN、SH、COOH、 COCT之驗金屬鹽、驗土金屬鹽、紹鹽以及銅鹽、Ci至 c8醇之羧酸酯、S03H與so3_之鹼金屬鹽、鹼土金屬鹽、 鋁鹽以及銅鹽、(^至心醇之硫酸酯、(^至(:8之烷基、苯 10 基與多環芳族與吡啶基、喹啉基、異喳啉基以及一將個 別的單體單元鏈合在一起之單鍵, R5、R5'與R5&quot;代表各個分別相同於R1、R2、R3、R4、R6、 R7、R8、R9、R1’、R2’、R3’、R4’、R6’、R7_、R8’、R9’、 Rr、R2_’、R3”、R4&quot;、R6’’、R7”、R8&quot;以及R9’’者,但有條 15 件是它們不代表一單鍵, R2、R2’、R2&quot;、R3'與R3&quot;可額外地選自包含氧基、亞胺基 與伸曱基所構成之群組,但有條件是,一被側氧基、亞 胺基或伸甲基所取代之單體單元包含有化學通式 &lt;IIIb&gt;之結構單元N(R5/5V5”)CC(R4/4V4&quot;)C(R3/3W), 20 其中,進一步地,若該R2、R2'、R2'1、R3'與R3’1非為側氧 基、亞胺基或伸甲基時,其結構單元Να:(Κ1/ινι&quot;)(:(Ι^'/2'’) 53 1313679 具有下列化學通式&lt;八^&gt;或&lt;1¥13&gt;之一者: &lt;IV a&gt; H pi/r/r &lt;IV b&gt; 」γ^γ^2/2’/2&quot; 其中,進一步地,A —係為一酸性陰離子,以及 其中,進一步地,具有化學通式&lt;1&gt;與&lt;11&gt;之所有低聚吩 嗪正離子化合物係以一為至少大約80 mol-%之數量被包 5 含於該混合物内, 其中,在選自於包含R2、R2'、R2”、R3、R3’、R3 '、R7、R7'、 R7&quot;、R8、R8'與R8’’之群組的殘基中,至少有一個殘基具有 自包含鹵素與羥基之群組中選出之一意義。 10 2.如申請專利範圍第1項之低聚吩嗉正離子化合物之混合 物,其中依據該化學通式&lt;11&gt;之低聚吩嗉化合物,選自 包含R2、R3、R7&quot;與R8_’之群組之殘基中至少有一個具有 一選自於包含鹵素與羥基之群組中的意義。 3.如申請專利範圍第1項之低聚吩嗉正離子化合物之混合 15 物,其中,在選自於包含R2、R2'與R2’_之群組中的殘基 中至少有一個係代表(^至(:8之烷基。 Γ Γ. 1 L -J·. -i 54 1313679 4. 如申請專利範圍第3項之低聚吩嗪正離子化合物之混合 物,其中該心至^之烷基係為曱基或乙基。 5. 如申請專利範圍第1項之低聚吩啳正離子化合物之混合 物,其中,在選自於包含R7、R7'與R7&quot;之群組中的殘基 5 中至少有一個係代表一被烷基化之胺。 6. 如申請專利範圍第5項之低聚吩嗉正離子化合物之混合 物,其中,該被烷基化之胺係選自於包含N-甲胺、N-乙胺、Ν,Ν-二曱胺以及Ν,Ν-二乙胺之群組。 7. 如申請專利範圍第1項之低聚吩嗉正離子化合物之混合 10 物,其中,在選自於包含R5、R5'與R5&quot;之群組中的殘基 中至少有一個係代表曱基或一芳基基團。 8. 如申請專利範圍第7項之低聚吩嗉正離子化合物之混合 物,其中該芳基基團係為苯基或曱苯基。 9. 如申請專利範圍第1項之低聚吩嗉正離子化合物之混合 15 物,其中該酸性陰離子Α_係選自於包含下列之群組: 硫酸、硫酸氫化物、鹵化物、四氟硼酸、六氟磷酸、硝 酸、乙酸、三氟乙酸以及曱磺酸。 10. 如申請專利範圍第1項之低聚吩嗉正離子化合物之混合 物,其中於該化合物中之該單體單元係選自包含下列之 20 群組: (a) 7-Ν,Ν-二甲基胺基-3-羥基-2-甲基-5-苯基-吩嗉正 離子 (b) 3-氯-7-Ν,Ν-二甲基胺基-5-苯基-吩嗉正離子 (c) 8-二甲基胺基-10-苯基-10氫-吩嗉-2-酮 55 1313679 (d) 2-Ν,Ν-二甲基胺基-10-苯基-5,10-二氳吩嗉 (e) 3-N-乙基胺基-7-羥基-5-苯基-吩嗉正離子 (f) 3-氯-7-N-乙基胺基-5-笨基-吩嗉正離子 (g) 3-甲基-8-N-甲基胺基-10-苯基-10氫-吩嗉-2-酮 (h) 7-N-甲基胺基-2-甲基-5-苯基-5,10-二氫吩嗉。 11.如申請專利範圍第1項之低聚吩嗉正離子化合物之混合 物,其中該混合物係藉由下列化學通式&lt; I X&gt;之至少一單 體吩嗉正離子化合物的重氮化而被製備:10 (Α·) (Α') with a further oligomeric phenanthrene cation compound, wherein, in the above chemical formulas &lt;1&gt; and &lt;11&gt;, structural unit n(r5/5V5&quot;)cc(r4 /4'/4I')c(r3/3V3&quot;) has one of the following chemical formulas &lt;1113&gt; or &lt;11113&gt;: N ^ 丫\r3/373' r5/5V5m R4/4V4'' 52 15 1313679 (j^5/575&quot; p4/4V4M where R1, R2, R3, R4, R6, R7, R8, R9, R1', R2', R3', R4, R6', R7', R8 , R9', R1', R2, R3", R4', R6', R7, R8, '5 and R9&quot; each have a meaning selected from the group consisting of: hydrogen, halogen , amine, OH, CN, SCN, SH, COOH, COCT metal salts, soil test metal salts, salt and copper salts, carboxylic acid esters of Ci to c8 alcohols, alkali metal salts of S03H and so3_, alkaline earth a metal salt, an aluminum salt, and a copper salt, (^ to a heart alcohol sulfate, (^ to (8 alkyl, benzene 10 and polycyclic aromatic and pyridyl, quinolyl, isoindolinyl, and one) A single bond that links individual monomer units together, R5, R5' and R5&quot; Each is the same as R1, R2, R3, R4, R6, R7, R8, R9, R1', R2', R3', R4', R6', R7_, R8', R9', Rr, R2_', R3" , R4&quot;, R6'', R7", R8&quot; and R9'', but there are 15 pieces that do not represent a single bond, R2, R2', R2&quot;, R3' and R3&quot; may additionally be selected from The group consisting of an oxy group, an imido group and a fluorenyl group, provided that a monomer unit substituted by a pendant oxy group, an imido group or a methyl group contains a chemical formula &lt;IIIb&gt; Structural unit N(R5/5V5")CC(R4/4V4&quot;)C(R3/3W), 20 wherein, further, if R2, R2', R2'1, R3' and R3'1 are not side In the case of an oxy group, an imido group or a methyl group, the structural unit Να:(Κ1/ινι&quot;)(:(Ι^'/2'') 53 1313679 has the following chemical formula &lt;8^&gt; or &lt; One of 1¥13&gt;: &lt;IV a&gt; H pi / r / r &lt; IV b &gt; γ γ ^ 2 / 2 '/2 &quot; wherein, further, A - is an acidic anion, and Further, all of the oligophenazines having the chemical formulas &lt;1&gt; and &lt;11&gt; The ionic compound is contained in the mixture in an amount of at least about 80 mol-%, wherein is selected from the group consisting of R2, R2', R2", R3, R3', R3', R7, R7' At least one of the residues of the group of R7&quot;, R8, R8' and R8'' has one meaning selected from the group consisting of halogen and hydroxyl groups. 10. A mixture of oligo-fluorene ruthenium cation compounds according to claim 1 wherein the oligo-phenylene compound according to the chemical formula &lt;11&gt; is selected from the group consisting of R2, R3, R7&quot; and R8_' At least one of the residues of the group has a meaning selected from the group consisting of a halogen and a hydroxyl group. 3. A mixture of oligo-fluorene cation compounds according to claim 1 wherein at least one of the residues selected from the group consisting of R2, R2' and R2'- represents (^ to (8 alkyl). Γ Γ. 1 L -J·. -i 54 1313679 4. A mixture of oligophenazine cation compounds as in claim 3, wherein the heart to the alkane The base is a thiol group or an ethyl group. 5. A mixture of oligo-fluorene sulfonium cation compounds according to claim 1 wherein the residue is selected from the group consisting of R7, R7' and R7&quot; At least one of the groups 5 represents an alkylated amine. 6. A mixture of oligo-phenoxy cation compounds according to claim 5, wherein the alkylated amine is selected from the group consisting of N a group of methylamine, N-ethylamine, hydrazine, hydrazine-diamine and hydrazine, hydrazine-diethylamine. 7. A mixture of oligo-fluorene cations of the ionic compound of claim 1 Wherein at least one of the residues selected from the group consisting of R5, R5' and R5&quot; represents a thiol or an aryl group. A mixture of oligomeric ruthenium cation compounds of item 7, wherein the aryl group is phenyl or fluorenyl phenyl. 9. Mix of oligo-fluorene ruthenium cation compounds as in claim 1 And wherein the acidic anion Α is selected from the group comprising: sulfuric acid, hydrogen sulphate, halide, tetrafluoroboric acid, hexafluorophosphoric acid, nitric acid, acetic acid, trifluoroacetic acid, and hydrazine sulfonic acid. A mixture of oligo-fluorene ruthenium cation compounds of claim 1 wherein the monomer unit in the compound is selected from the group consisting of the following 20 groups: (a) 7-oxime, Ν-dimethylamine 3-hydroxy-2-methyl-5-phenyl-phenanthridine cation (b) 3-chloro-7-indole, fluorenyl-dimethylamino-5-phenyl-phenanthridine cation (c 8-Dimethylamino-10-phenyl-10hydro-phenanth-2-one 55 1313679 (d) 2-indole, fluorenyl-dimethylamino-10-phenyl-5,10-di (e) 3-N-ethylamino-7-hydroxy-5-phenyl-phenanthridine (f) 3-chloro-7-N-ethylamino-5-phenyl-phen Ruthenium ion (g) 3-methyl-8-N-methylamino-10-phenyl-10-hydro-phenanth-2-one (h) 7-N-methylamino-2-methyl -5- A mixture of oligomeric ruthenium cation compounds according to claim 1 wherein the mixture is at least one of the following chemical formulas &lt;I X&gt; The body is prepared by diazotization of a positive ion compound: &lt;IX&gt; 其中R1、R2、R4、R5、豕6、R7、R8與R9具有相同於先前 10 所賦予之定義, 以及藉由在一鍋法反應中來反應所得到的重氮化化合 物而形成該低聚吩啳正離子化合物。 12.如申請專利範圍第1項之低聚吩嗉正離子化合物之混合 物,其中該等化合物具有選自於群組所包含之下列化學 15 通式:&lt;IX&gt; wherein R1, R2, R4, R5, 豕6, R7, R8 and R9 have the same definitions as given in the previous 10, and the diazotized compound obtained by the reaction in a one-pot reaction The oligomeric phenanthrene cation compound is formed. 12. A mixture of oligomeric phenanthrene cation compounds as claimed in claim 1 wherein the compounds have the following chemical formulas selected from the group consisting of: b &lt;V&gt; 56 U13679 有i述所k及之疋義以及其中R1〇、RU、R1〇,、尺川、Rl〇 與R11&quot;係代表氫或(^至(:8之烷基。 10b &lt;V&gt; 56 U13679 has the meaning of 及 and its R1〇, RU, R1〇, 尺川, Rl〇 and R11&quot; are hydrogen or (^ to (: 8 alkyl). _如申%專利㈣第1項之低聚吩A正離子化合物之混合 物,其中它們係選自於包含下列化合物之群組: l' 3’-N,N-二甲基胺基_3,8'_二甲基-8-(N-甲基胺 基)-7-侧氧基-10,5,-二苯基-5’,7,-二氫-[2,2']二聯吩嗉 基-10·正離子-氣化物 Η· 3,8’,8&quot;-三甲基-8,3’,3&quot;·參-(Ν-甲基胺基)-7&quot;-側氧基 -1〇,5’,5”·三苯基-5’,10',5”,7”-四氫-[2,2,;7,,2”]三聯吩 嗉-10-正離子-氯化物 iii. 8,3’-貳-(Ν,Ν-二甲基胺基)-8’-甲基-7'-側氧基-10,5’- 57 15 1313679 二苯基-5’,7’-二氫-[2,2’]二聯吩嗉基-10-正離子-硫酸 氫鹽 ^8,8'-貳-(况沁二甲基胺基)-3,3'-二甲基-10,10'-二苯 基-[2,2’]二聯吩嗉基-10,10'-正離子-四氟硼酸鹽 5 v. 8,8'-貳-(Ν,Ν-二甲基胺基)-10,10'-二苯基-3-甲基- [2,2,]二聯吩嗉基-10,10'-正離子-四氟硼酸鹽 vi. 3,8’-貳-(Ν,Ν-二曱基胺基)-8,3’-二甲基-5,10’-二苯基 -7-羥基-[2,2’]二聯吩嗉基-5,10'-正離子-四氟硼酸鹽 乂比3,8匕貳-(凡沁二甲基胺基)-8,3’-二甲基-5,10'-二苯基 10 -7-羥基-[2,2’]二聯吩嗪基-5,10'-正離子-氯化物 乂出.3,8’,8”-參-(凡义二曱基胺基)-8-甲基-5,10’,10&quot;-三 苯基-[2,2’;7’,2”]三聯吩嗉-5,10,,10&quot;-正離子-四氟 硼酸鹽 ix. 8’-Ν,Ν-二乙基胺基-8-Ν,Ν-二甲基胺基-3-甲基 15 -10,10’-二苯基-[2,2’]二聯吩嗉基-10,10’-正離子-硫 酸鹽 X. 8’-凡:^-二乙基胺基-3-凡:^-二曱基胺基-7-羥基-8-曱 基-5,10'-二苯基-[2,2’]二聯吩嗉基-6,10’-正離子-硫 酸鹽 20 xi. 8,3’,3”-參-(N,N-二曱基胺基)-7&quot;-側氧基-10,5’,5”- 三苯基-51,10’,5”,7”-四氫-[2,2,;7’,2,,]三聯吩嗉-10-正離子-硫酸氫鹽 xii. 3,8’-貳-(N,N-二乙基胺基)-7-羥基-5,10'-二苯基 _[2,2’]二聯吩嗉基-6,10'-正離子-硫酸鹽 58 1313679 叉出.7-氯-3,8’-貳-(凡斗二甲基胺基)-5,10’-二苯基-8-甲 基-[2,2’]二聯吩啳基-5,10’-正離子-氯化物 xiv. 7-氯-3,8'-貳-(Ν,Ν-二甲基胺基)-8,3'-二甲基-5,10'-二苯基-[2,2']二聯吩啳基-5,10’-正離子-氯化物 5 XV. 7-氯-3,8'-貳-(Ν,Ν-二曱基胺基)-5,10'-二苯基-[2,2'] 二聯吩嗔基-5,10'-正離子-鼠化物 xvi. 7-氯-3,8’,8”-參-(Ν,Ν-二甲基胺基)-8,3·-二甲基-5, 10,,10'’-三甲基-[2,2’;7’,2,’]三聯吩嗉基-5,10’,10&quot;-正離子-氯化物 10 叉¥汰7-氯-8,1'-二甲基-8'-队!^二甲基胺基-5,10'-二苯基 -[2,2']二聯吩嗉基-5,10'-正離子-氯化物 xviii. 8,8'-貳-(N,N-二曱基胺基)-10,10’-二甲基-[2,2’]二 聯吩β秦基-10,10'-正離子-硫酸氫鹽 xix. 8,3,,3&quot;-參-(Ν,Ν-二甲基胺基)-7”-側氧基-10,5,,5”- 15 三苯基-5”,7”-二氫-[2,2’;7',2”]三聯吩嗉-10,5’-正 離子-硫酸氫鹽 XX. 8,3,,3”-參-(队沁二甲基胺基)-8-甲基-5,10’,10”-三 苯基-[2,2,;7,,2”]三聯吩嗉-5, 1〇|,10”-正離子-四氟 硼酸鹽 20 xxi. 8,8’-貳-(N,N-二曱基胺基)-10,10'-二苯基-[2,2’]二 聯吩嗉基-1〇,1〇’-正離子-四氟硼酸鹽 xxii. 8,8’-貳-(N-甲基胺基)各氯-10,10,-二苯基_[2,2’]二 聯吩嗉基-1〇,1〇'-正離子-氯化物 xxiii. 3,3',3”-參-(N_ 甲基胺基)-8”-氯-5,5·,5”-三苯基 59 1313679 _[8,2’;8’,7”]-三聯吩嗉-5,5’,5”-正離子-氣化物。 14 · 一種用以製備如申清專利範圍弟1項之低聚吩β秦正離子 化合物之混合物的方法,其中,至少一具有下列化學通 式&lt;ΙΧ&gt;之單體吩嗉正離子化合物被重氮化,a mixture of oligophene A cation compounds according to claim 1 of the patent (4), wherein they are selected from the group consisting of: l' 3'-N,N-dimethylamino group _3, 8'-Dimethyl-8-(N-methylamino)-7- pendantoxy-10,5,-diphenyl-5',7,-dihydro-[2,2']嗉基-10·正离子-化化Η·3,8',8&quot;-trimethyl-8,3',3&quot;·gin-(Ν-methylamino)-7&quot;-sideoxy -1〇,5',5"·triphenyl-5',10',5",7"-tetrahydro-[2,2,;7,2"]triphenyl--10-positron- Chloride iii. 8,3'-贰-(Ν,Ν-dimethylamino)-8'-methyl-7'-sideoxy-10,5'- 57 15 1313679 diphenyl-5' , 7'-dihydro-[2,2']diphenyl--10-n-ionium-hydrogen sulfate^8,8'-贰-(condition dimethylamino)-3,3'- Dimethyl-10,10'-diphenyl-[2,2']dipontyl-10,10'-positive-tetrafluoroborate 5 v. 8,8'-贰-(Ν, Ν-Dimethylamino)-10,10'-diphenyl-3-methyl-[2,2,]diphenyl-indenyl-10,10'-positive-tetrafluoroborate vi. 3 ,8'-贰-(Ν,Ν-didecylamino)-8,3'-dimethyl-5,10'-diphenyl -7-7-hydroxy-[2,2']dibiphenyl--5,10'-n-ion-tetrafluoroborate 乂 is 3,8 匕贰-(fan dimethylamino)-8, 3'-Dimethyl-5,10'-diphenyl 10 -7-hydroxy-[2,2']dipontazine-5,10'-positron-chloride 乂.3,8' , 8"- gin-(fanyi-didecylamino)-8-methyl-5,10',10&quot;-triphenyl-[2,2';7',2"]triphenyl-5 ,10,,10&quot;-positive ion-tetrafluoroborate ix. 8'-Ν, Ν-diethylamino-8-oxime, Ν-dimethylamino-3-methyl 15- 10,10 '-Diphenyl-[2,2']diphenyl-indenyl-10,10'-positive ion-sulfate X. 8'-where: ^-diethylamino-3-van: ^-two Mercaptoamino-7-hydroxy-8-mercapto-5,10'-diphenyl-[2,2']dibiphenyl--6,10'-positive-sulfate 20 xi. 3',3"-para-(N,N-didecylamino)-7&quot;-sideoxy-10,5',5"-triphenyl-51,10',5",7"- Tetrahydro-[2,2,;7',2,,]tripyin-10-n-ionium-hydrogen sulfate xii. 3,8'-贰-(N,N-diethylamino)-7 -hydroxy-5,10'-diphenyl-[2,2']dibiphenyl--6,10'-positive-sulfate 58 1313679 forked out.7-chloro-3, 8'-贰-(Fan Dimethylamino)-5,10'-diphenyl-8-methyl-[2,2']diphenyl-indenyl-5,10'-n-ion-chloride Xiv. 7-Chloro-3,8'-贰-(Ν,Ν-dimethylamino)-8,3'-dimethyl-5,10'-diphenyl-[2,2'] Di-indenyl-5,10'-positronium-chloride 5 XV. 7-chloro-3,8'-fluorene-(fluorene, fluorenyl-didecylamino)-5,10'-diphenyl -[2,2'] Di-indenyl-5,10'-positive-rat compound xvi. 7-Chloro-3,8',8"-para-(Ν,Ν-dimethylamino) -8,3·-dimethyl-5,10,,10''-trimethyl-[2,2';7',2,']triphenyl-indenyl-5,10',10&quot;-positive Ion-chloride 10 Fork 7-chloro-8,1'-dimethyl-8'-team!^Dimethylamino-5,10'-diphenyl-[2,2']嗉-5,10'- cation-chloride xviii. 8,8'-贰-(N,N-didecylamino)-10,10'-dimethyl-[2,2'] Diphenophene β-methyl-10,10'-positive ion-hydrogen sulfate xix. 8,3,,3&quot;-para-(Ν,Ν-dimethylamino)-7"-sideoxy-10 ,5,,5"- 15 triphenyl-5",7"-dihydro-[2,2';7',2"]tripyin-10,5'-positive ion-hydrogen sulfate XX. 8,3,,3"-parameter-(team 沁dimethylamino)-8-methyl-5,10 , 10"-triphenyl-[2,2,;7,,2"]tripyin-5,1〇|,10"-positronium-tetrafluoroborate 20 xxi. 8,8'-贰- (N,N-didecylamino)-10,10'-diphenyl-[2,2']dibiphenyl-indenyl-1,1〇'-positive-tetrafluoroborate xxii. 8 , 8'-贰-(N-methylamino)-chloro-10,10,-diphenyl-[2,2']diphenyl-indenyl-1,1〇'-positive-chloride Xxiii. 3,3',3"-para-(N-methylamino)-8"-chloro-5,5·,5"-triphenyl 59 1313679 _[8,2';8',7" ]-Triple-anthracene-5,5',5"-positive ion-vapor. 14. A method for preparing a mixture of oligophene β-Qin cation compounds as claimed in claim 1, wherein at least one monomeric ruthenium cation compound having the following chemical formula &lt;ΙΧ&gt; Diazotization, 之定義; 且在該重氮反應中被形成的重氮化合物在_鋼法反應 中被反應成該低聚吩51秦正離子化合物之混合物。 10 I5.如申請專利範圍第14項之方法,其中具化學通式&lt;ιχ&gt; 之單體吩啳正離子化合物係選自於包含藏紅染料之群 組,其中R1、R4、V與R9各自代錢,汉5代表苯基以及 R7代表NRY,其中的Rl〇與Rn各自獨立地具有前述意 義中之一者。 ’ 15 I6.如申請專利範圍第14或15項之方法,其中: a) 該藏紅或藏紅之混合物被散浮於無機酸内丨以及 b) 在-為至少听的溫度下,一亞硝酸或亞硝基硫酸 被添加至-置於該無機酸中之該藏紅或藏紅混合 物的該散浮液内。 20 Π.如申請專利範圍第_之方法,其中該無機酸係選自於 包含下列之群組:鹽酸、硫酸、四氟硼酸、六氟磷酸、 60 1313679 磷酸、氫溴酸以及此等之混合物。 18. 如申請專利範圍第14或15項中之方法,其中所得到的重 氮化合物在一催化劑之存在下被反應而形成該低聚吩 嗉正離子化合物之混合物,該催化劑是由選自於包含 5 銅、鎳、鈀及鐵或這些金屬的化合物之群組的金屬所構 成,或是由選自於包含驗金屬黃原酸鹽、驗金屬硫氰酸 鹽以及驗金屬硒代氰酸鹽之群組的化合物所構成。 19. 如申請專利範圍第18項之方法,其中該等金屬化合物係 選自於包含金屬之氧化物、i化物與擬鹵化物之群組。 10 20.如申請專利範圍第18項之方法,其中該催化劑係呈一粉 末之形式。 21. —種用於電解沉積一銅沉積物之酸浴,該酸浴包含低聚 吩啳正離子化合物,其中該低聚吩嗉正離子化合物係呈 如申請專利範圍第1項的混合物之形式被包含。 15 22.如申請專利範圍第21項之酸浴,其中該低聚吩嗉正離子 化合物之混合物係呈一為0.00005-0.1 g/Ι之濃度被包含。 23.如申請專利範圍第21或22項之酸浴,其額外地包含有選 自於包含含氮之硫化合物以及聚合性氮化合物的群組 中之化合物。 20 24.如申請專利範圍第23項之酸浴,其中被一起包含於該酸 浴中的該含氮之硫化合物與聚合性氮化合物的濃度係 為0.0001 -0.50 g/Ι。 25. —種用於電解沉積一銅沉積物之方法,藉由該方法一工 作件與一陽極與一含有銅離子以及如申請專利範圍第1 61 1313679 項中之混合物的鍍浴接觸,而一電流流動在該工作件與 該陽極之間被生成。 26. —種如申請專利範圍第25項的方法之用途,其係用於為 達成生成裝飾性表面之目的而沉積一高度光亮、均一的 5 銅沉積物。 27. —種如申請專利範圍第25項的方法之用途,其係用於在 一設有盲微孔的印刷電路板上形成一銅沉積物。 28. —種如申請專利範圍第25項的方法之用途,其係用於在 一設有高寬深比凹槽的半導體基材上形成一銅沉積物。 10 62The definition; and the diazonium compound formed in the diazonium reaction is reacted into a mixture of the oligophene 51 Qin cation compound in the _ steel reaction. 10 I5. The method of claim 14, wherein the monomeric cation cation compound having the chemical formula &lt;ιχ&gt; is selected from the group consisting of saffron dyes, wherein R1, R4, V and R9 Each of them represents money, Han 5 represents a phenyl group and R7 represents NRY, wherein R1〇 and Rn each independently have one of the aforementioned meanings. ' 15 I6. The method of claim 14 or 15, wherein: a) the mixture of saffron or saffron is dispersed in the mineral acid bismuth and b) at - at least the temperature of the hearing, Nitric acid or nitrososulfuric acid is added to the dispersion of the saffron or saffron mixture placed in the mineral acid. The method of claim </ RTI> wherein the inorganic acid is selected from the group consisting of hydrochloric acid, sulfuric acid, tetrafluoroboric acid, hexafluorophosphoric acid, 60 1313679 phosphoric acid, hydrobromic acid, and mixtures thereof . 18. The method of claim 14 or 15, wherein the diazonium compound obtained is reacted in the presence of a catalyst to form a mixture of the oligomeric porphyrin cation compound selected from the group consisting of a metal comprising a group of 5 copper, nickel, palladium, and iron or a compound of these metals, or selected from the group consisting of a metal-containing xanthogenate, a metal thiocyanate, and a metal selenocyanate. The group consists of compounds. 19. The method of claim 18, wherein the metal compound is selected from the group consisting of oxides, imides and pseudohalides of metals. 10. The method of claim 18, wherein the catalyst is in the form of a powder. An acid bath for electrolytically depositing a copper deposit, the acid bath comprising an oligomeric phenanthrene cation compound, wherein the oligo-anthracene cation compound is in the form of a mixture as claimed in claim 1 Is included. An acid bath according to claim 21, wherein the mixture of the oligomeric porphyrin cation compounds is contained at a concentration of 0.00005-0.1 g/Ι. 23. The acid bath of claim 21 or 22 additionally comprising a compound selected from the group consisting of nitrogen-containing sulfur compounds and polymeric nitrogen compounds. 20. The acid bath of claim 23, wherein the concentration of the nitrogen-containing sulfur compound and the polymerizable nitrogen compound contained in the acid bath is 0.0001 - 0.50 g / Torr. 25. A method for electrolytically depositing a copper deposit by which a working member is contacted with an anode and a plating bath containing copper ions and a mixture of the scope of the patent application No. 1 61 1313679 Current flow is generated between the workpiece and the anode. 26. Use of the method of claim 25, for depositing a highly bright, uniform 5 copper deposit for the purpose of creating a decorative surface. 27. Use of the method of claim 25, for forming a copper deposit on a printed circuit board having blind microvias. 28. Use of the method of claim 25, for forming a copper deposit on a semiconductor substrate having a high aspect ratio groove. 10 62
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US7872130B2 (en) 2011-01-18
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CA2502717A1 (en) 2004-07-08
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