TWI313489B - Post treatment of dry-etched metal film and system performing combined etching and stripping procedures - Google Patents
Post treatment of dry-etched metal film and system performing combined etching and stripping procedures Download PDFInfo
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- TWI313489B TWI313489B TW091116187A TW91116187A TWI313489B TW I313489 B TWI313489 B TW I313489B TW 091116187 A TW091116187 A TW 091116187A TW 91116187 A TW91116187 A TW 91116187A TW I313489 B TWI313489 B TW I313489B
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- 229910052751 metal Inorganic materials 0.000 title claims description 49
- 239000002184 metal Substances 0.000 title claims description 49
- 238000000034 method Methods 0.000 title claims description 40
- 238000005530 etching Methods 0.000 title claims description 26
- 238000011282 treatment Methods 0.000 title claims description 20
- 229920002120 photoresistant polymer Polymers 0.000 claims description 59
- 239000010408 film Substances 0.000 claims description 47
- 238000001312 dry etching Methods 0.000 claims description 43
- 229910052782 aluminium Inorganic materials 0.000 claims description 18
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 18
- 239000000758 substrate Substances 0.000 claims description 15
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 claims description 12
- 238000004140 cleaning Methods 0.000 claims description 11
- 238000012546 transfer Methods 0.000 claims description 10
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 10
- HZAXFHJVJLSVMW-UHFFFAOYSA-N 2-Aminoethan-1-ol Chemical compound NCCO HZAXFHJVJLSVMW-UHFFFAOYSA-N 0.000 claims description 8
- 239000003153 chemical reaction reagent Substances 0.000 claims description 8
- 239000007789 gas Substances 0.000 claims description 7
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 claims description 6
- 238000012805 post-processing Methods 0.000 claims description 6
- 239000011241 protective layer Substances 0.000 claims description 6
- 150000001875 compounds Chemical class 0.000 claims description 5
- 239000010410 layer Substances 0.000 claims description 5
- 239000010409 thin film Substances 0.000 claims description 5
- 238000009832 plasma treatment Methods 0.000 claims description 4
- TXEYQDLBPFQVAA-UHFFFAOYSA-N tetrafluoromethane Chemical compound FC(F)(F)F TXEYQDLBPFQVAA-UHFFFAOYSA-N 0.000 claims description 4
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 claims description 3
- 238000006243 chemical reaction Methods 0.000 claims description 3
- 239000001301 oxygen Substances 0.000 claims description 3
- 229910052760 oxygen Inorganic materials 0.000 claims description 3
- 239000004215 Carbon black (E152) Substances 0.000 claims description 2
- 238000004380 ashing Methods 0.000 claims description 2
- 238000000151 deposition Methods 0.000 claims description 2
- 230000008021 deposition Effects 0.000 claims description 2
- 229930195733 hydrocarbon Natural products 0.000 claims description 2
- -1 hydrocarbon fluoride Chemical class 0.000 claims description 2
- 230000010354 integration Effects 0.000 claims description 2
- 150000002736 metal compounds Chemical class 0.000 claims description 2
- 238000011160 research Methods 0.000 claims description 2
- 238000012360 testing method Methods 0.000 claims description 2
- 239000003795 chemical substances by application Substances 0.000 claims 3
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims 2
- 230000005693 optoelectronics Effects 0.000 claims 2
- KZBUYRJDOAKODT-UHFFFAOYSA-N Chlorine Chemical compound ClCl KZBUYRJDOAKODT-UHFFFAOYSA-N 0.000 claims 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims 1
- 241000609789 Kobus vardonii Species 0.000 claims 1
- 239000000956 alloy Substances 0.000 claims 1
- 229910045601 alloy Inorganic materials 0.000 claims 1
- 150000001412 amines Chemical class 0.000 claims 1
- 238000012937 correction Methods 0.000 claims 1
- 230000005611 electricity Effects 0.000 claims 1
- 230000007613 environmental effect Effects 0.000 claims 1
- 239000001257 hydrogen Substances 0.000 claims 1
- 229910052739 hydrogen Inorganic materials 0.000 claims 1
- 239000012528 membrane Substances 0.000 claims 1
- 238000001465 metallisation Methods 0.000 claims 1
- 230000003647 oxidation Effects 0.000 claims 1
- 238000007254 oxidation reaction Methods 0.000 claims 1
- 238000003672 processing method Methods 0.000 claims 1
- 238000005260 corrosion Methods 0.000 description 12
- 230000007797 corrosion Effects 0.000 description 11
- 238000012545 processing Methods 0.000 description 10
- VSCWAEJMTAWNJL-UHFFFAOYSA-K aluminium trichloride Chemical compound Cl[Al](Cl)Cl VSCWAEJMTAWNJL-UHFFFAOYSA-K 0.000 description 7
- 239000000460 chlorine Substances 0.000 description 6
- 229910052801 chlorine Inorganic materials 0.000 description 6
- 239000011159 matrix material Substances 0.000 description 6
- 230000000694 effects Effects 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 4
- 238000004904 shortening Methods 0.000 description 3
- 239000007788 liquid Substances 0.000 description 2
- 238000005406 washing Methods 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- 241000238631 Hexapoda Species 0.000 description 1
- 230000003213 activating effect Effects 0.000 description 1
- AZDRQVAHHNSJOQ-UHFFFAOYSA-N alumane Chemical group [AlH3] AZDRQVAHHNSJOQ-UHFFFAOYSA-N 0.000 description 1
- WNROFYMDJYEPJX-UHFFFAOYSA-K aluminium hydroxide Chemical compound [OH-].[OH-].[OH-].[Al+3] WNROFYMDJYEPJX-UHFFFAOYSA-K 0.000 description 1
- 150000007514 bases Chemical class 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000008030 elimination Effects 0.000 description 1
- 238000003379 elimination reaction Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 239000012495 reaction gas Substances 0.000 description 1
- 230000035484 reaction time Effects 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- FAQYAMRNWDIXMY-UHFFFAOYSA-N trichloroborane Chemical compound ClB(Cl)Cl FAQYAMRNWDIXMY-UHFFFAOYSA-N 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
- H01L21/02068—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers
- H01L21/02071—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers the processing being a delineation, e.g. RIE, of conductive layers
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C22/00—Chemical surface treatment of metallic material by reaction of the surface with a reactive liquid, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals
- C23C22/02—Chemical surface treatment of metallic material by reaction of the surface with a reactive liquid, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using non-aqueous solutions
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F4/00—Processes for removing metallic material from surfaces, not provided for in group C23F1/00 or C23F3/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
- H01L21/32135—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only
- H01L21/32136—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/67207—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
- H01L21/67745—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber characterized by movements or sequence of movements of transfer devices
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- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Plasma & Fusion (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Description
1313489 五、發明說明(1) 發明領域 本發明是關於一種金屬薄膜乾蝕刻之後處理方法,特 別是關於一種可以在金屬薄膜之乾蝕刻製程中,減少或避 免金屬薄膜腐姓的方法。此外,本發明亦關於一種姓刻與 去光阻步驟之整合系統,可在減少或避免金屬薄膜腐蝕之 外,縮短整體製程所需時間。 發明背景BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of post-dry etching of a metal thin film, and more particularly to a method for reducing or avoiding the rot of a metal film in a dry etching process of a metal thin film. In addition, the present invention is also directed to an integrated system of surname and photoresist removal steps that reduces the time required for the overall process in addition to reducing or avoiding corrosion of the metal film. Background of the invention
金屬薄膜,例如紹基質(aluminum-based)薄膜,在各 種電子元件的生產及製作中,都是非常重要的步驟。例如 在液晶顯示裝置(L C D )中,·以銘為基質(如I呂金屬或铭合 金)之薄膜可以用來作為導電金屬,以及反射金屬層。在 其他電子產品中,此類鋁基質薄膜也提供重要的功能。Metallic films, such as aluminum-based films, are very important steps in the production and fabrication of various electronic components. For example, in a liquid crystal display device (L C D ), a film of a substrate (e.g., Ilu metal or gold) can be used as the conductive metal and the reflective metal layer. In other electronic products, such aluminum matrix films also provide important functions.
以金屬導線之應用為例,在電子元件的製作過程中, 通常事先以各種適合的方法,形成一鋁薄膜,再利用蝕刻 方式去除非定義中的部份,留下所欲的鋁導線圖形 (Pattern )。在蝕刻步驟中,可以使用濕式蚀刻或乾式 蝕刻。其中,所謂濕式蝕刻是指利用蝕刻液去除不用的部 分,至於乾式蝕刻則是指利用反應氣體激化成電漿後以物 理或化學的方式,去除不用的部分,留下有用的部分。 在鋁基質薄膜之乾蝕刻過程中,因其通常是在氣氣 (C 12)或含氯氣體,例如氯化硼(B C 13)等蝕刻氣體中進行,Taking the application of the metal wire as an example, in the manufacturing process of the electronic component, an aluminum film is usually formed in advance by various suitable methods, and the undefined portion is removed by etching to leave the desired aluminum wire pattern ( Pattern ). In the etching step, wet etching or dry etching may be used. Here, the wet etching means that the unused portion is removed by the etching liquid, and the dry etching means that the unused portion is removed by physical or chemical means by activating the reaction gas to form a useful portion. In the dry etching process of the aluminum matrix film, it is usually carried out in an etching gas such as gas (C 12) or a chlorine-containing gas such as boron chloride (B C 13).
第8頁 1313489 五、發明說明(2)Page 8 1313489 V. Description of invention (2)
而該鋁基質膜會因鋁原子與氯自由基(radical)間之反應 形成氯化鋁(A 1 C 1 X ),且氯化鋁在與水反應後會形成可溶 性的氫氧化鋁Al(OH)x,造成鋁基質膜之腐蝕。因此,一 般在此乾蝕刻製程後,必須經過一或數種後處理,以避免 先蝕刻完成的薄膜在等待期間(Q - t i m e )遭腐蝕的問題。這 些後處理步驟舉例而言包括四氟化碳/氧(CF4/02 )電漿處 理、氣態水/氧氣((H20(g)/02)電漿處理、碳氫氟化物 (CxHyF2)沈積氣體電漿處理、燒除(ashing)處理、以 及熱水洗淨處理等。不過,這些後處理方法或許可解決蝕 刻後鋁基質薄膜之腐蝕問題,但其一般需要較繁複的步驟 或較長的處理時間或多少損傷薄膜本身或造成後續製成的 困擾,因此,目前S需有一種新穎的銘基質薄膜乾式银刻 之後處理方法,該方法可以避免在鋁基質薄膜蝕刻後發生 腐蝕,並解決上述問題。 發明之目的The aluminum matrix film forms aluminum chloride (A 1 C 1 X ) due to the reaction between aluminum atoms and chlorine radicals, and aluminum chloride forms soluble aluminum hydroxide Al (OH) after reacting with water. )x, causing corrosion of the aluminum matrix film. Therefore, after this dry etching process, one or several post-treatments must be performed to avoid the problem that the first etched film is corroded during the waiting period (Q - t i m e ). Examples of these post-treatment steps include carbon tetrafluoride/oxygen (CF4/02) plasma treatment, gaseous water/oxygen ((H20(g)/02) plasma treatment, and hydrocarbon fluoride (CxHyF2) deposition gas). Slurry treatment, ashing treatment, hot water washing treatment, etc. However, these post-treatment methods may solve the corrosion problem of the aluminum matrix film after etching, but generally require complicated steps or long processing time. Or how much damage to the film itself or cause troubles in subsequent fabrication. Therefore, at present, S requires a novel post-silver engraving method for in-situ matrices, which can avoid corrosion after etching of the aluminum matrix film and solve the above problems. Purpose of the invention
本發明目的在於提供一種新穎的金屬薄膜乾蝕刻之後 處理方法,利用適合的後處理試劑避免生成可溶之金屬化 合物,且於洗除此後處理試劑後可回復原來的金屬蝕刻 面,因而避免該金屬之腐I虫。 本發明之另一目的在於提供一種新穎的蝕刻與去光阻 步驟之整合系統,可在進行乾蝕刻後處理之同時,對於製 程做適度的整合,以減省製程所需時間。The object of the present invention is to provide a novel post-drying treatment method for a metal thin film, which avoids the formation of a soluble metal compound by using a suitable post-treatment reagent, and recovers the original metal etched surface after washing the post-treatment reagent, thereby avoiding the metal. The rot I insect. Another object of the present invention is to provide a novel integrated etching and photoresist removal step that allows for a modest integration of the process while performing dry etching and subsequent processing to reduce the time required for the process.
第9頁 1313489 五、發明說明(3) 發明之簡述 依據本發明之金屬薄膜乾蝕刻之後處理方法,係以一 種可使蝕刻後之金屬薄膜形成不溶化合物護封層之後處理 試劑進行處理,以避免蝕刻後之金屬薄膜遭腐蝕。經本案 發明人之研究發現,一般用於乾蝕刻後光阻去除 (stripper)用之試劑,如單乙醇胺(monoethanolamine; Μ E A )或其他類似此作用之驗性化合物,可達成此目的。Page 9 1313489 V. DESCRIPTION OF THE INVENTION (3) Brief Description of the Invention The method for treating a metal thin film after dry etching according to the present invention is to treat a metal film which is formed after etching to form an insoluble compound protective layer, and then to process the reagent to Avoid corrosion of the metal film after etching. As a result of research by the inventors of the present invention, it is generally used for a photoresist for stripper after dry etching, such as monoethanolamine (Μ E A ) or other test compounds similar to this effect.
依據本發明之另一方面,一金屬薄膜乾钱刻之後處理 方法可與一光阻去除步驟利用一蝕刻與去光阻步驟之整合 系統加以整合,亦即在蝕刻程序後之短時間内即進行光阻 之去除步驟,利用該光阻去除步驟所使用之去光阻溶液中 之成分,與乾式钱刻後姓刻面之殘留含氯成分進行化學反 應,置換出氯,接著使此去光阻溶液中之成分脫離蝕刻 面,回復原來的金屬蚀刻面,如此可解決該金屬薄膜腐钮 之問題,同時可以減少製程所需時間。 上述本發明之目的及特點,可以由以下詳細說明,並 參照下列圖式而更形清楚。 圖式之說明According to another aspect of the present invention, a metal film dry etching process can be integrated with a photoresist removal step using an integrated system of etching and photoresist removal steps, that is, in a short time after the etching process. The step of removing the photoresist, using the components in the photoresist solution used in the photoresist removal step, chemically reacting with the residual chlorine component of the surnamed face after the dry money, replacing the chlorine, and then removing the photoresist The components in the solution are separated from the etched surface and restored to the original metal etched surface. This solves the problem of the metal film corrosion button and reduces the time required for the process. The above and other objects and features of the present invention will become more apparent from the description of the appended claims. Description of the schema
第1圖為本發明整合金屬薄膜乾蝕刻與光阻去除之系 統圖。Fig. 1 is a system diagram showing dry etching and photoresist removal of an integrated metal film of the present invention.
第10頁 1313489 五、發明說明(5) A1 ( : NH2-CH2-CH2-OH)x + x-Cl 其後,以異丙醇(isopropyl alcohol; IPA)或水取代單乙 醇胺繼續清洗該基板,則可洗除單乙醇胺,回復原來的鋁 姓刻面,因此不會發生腐#的現象。Page 10 1313489 V. Description of the invention (5) A1 ( : NH2-CH2-CH2-OH)x + x-Cl Thereafter, the substrate is continuously washed with isopropyl alcohol (IPA) or water instead of monoethanolamine. Then, the monoethanolamine can be washed away, and the original aluminum surname is restored, so that the phenomenon of rot # does not occur.
因此,本發明將原於一旋轉式去光阻機台上進行之光 阻去除程序整合至該乾蝕刻程序中作為該乾蝕刻程序之後 處理,並緊接著進行光阻去除,如此一來,不但可達成如 上避免金屬薄膜腐蝕之效果,亦可省去習用技術中刻意進 行之後處理步驟,因此可縮短單片基板處理時間與整體製 程時間。當然,在乾蝕刻步驟後,去光阻步驟前,亦可進 行習知之後處理步驟,以進一步確保防腐蝕效果,但此後 處理時間相較於乾蝕刻步驟與去光阻步驟分開進行之傳統 製程而言,可大幅縮短,以儘可能減少傳統後處理方式所 導致之處理時間較長或損傷薄膜之問題。 除此之外,因鋁的腐蝕主要是在乾式蝕刻步驟結束後 3 0分鐘内發生,如能將乾式蝕刻反應器與光阻去除器整 合,則可在鋁氯化物尚未開始腐蝕之前,即已進行光阻去 除步驟,利用去光阻溶液中之成分來置換氯,以保護蝕刻 面,同時進行光阻去除,因此可以縮短反應時間,且更進 一步縮短整體製程所需時間。Therefore, the present invention integrates the photoresist removal process performed on a rotary photoresist device into the dry etching process as the dry etching process, and then performs photoresist removal, thus not only The effect of avoiding the corrosion of the metal film can be achieved as above, and the post-processing step can be omitted in the conventional technology, thereby shortening the processing time of the single substrate and the overall processing time. Of course, after the dry etching step, before the photoresist removal step, the conventional post-processing steps may be performed to further ensure the anti-corrosion effect, but the processing time thereafter is different from the conventional etching process in which the dry etching step and the photoresist removal step are performed separately. In this case, it can be greatly shortened to minimize the problem of long processing time or damage to the film caused by the conventional post-processing method. In addition, the corrosion of aluminum occurs mainly within 30 minutes after the end of the dry etching step. If the dry etching reactor can be integrated with the photoresist remover, it can be before the aluminum chloride has begun to corrode. The photoresist removal step is performed by replacing the chlorine with the components in the photoresist solution to protect the etched surface and removing the photoresist at the same time, thereby shortening the reaction time and further shortening the time required for the overall process.
為達乾蝕刻後處理與光阻去除整合之目的,本發明提 供一種系統實施例,如第1圖所示。此系統包括一個進出 站(cassette station) 11 ,一組到兩組旋轉式去光阻機 (spin stripper) 12, 13 , 一 低真空傳送室(load lockThe present invention provides a system embodiment for the purpose of integrating dry etching and photoresist removal, as shown in Figure 1. The system includes a cassette station 11 , a set of two sets of spin stripper 12, 13 , a low vacuum transfer chamber (load lock
第12頁 1313489 五、發明說明(6) chamber; LLC) 14 ,一乾式高真空傳送室(Transfer chamber,TC) 15 ,以及三组乾式#刻室或稱製程反應室 16, 17, 1 8。當然,在本實施例中,旋轉式去光阻機雖設 有2組,而乾式蝕刻站有3組,但在實際應用上,可以依據 需要而改變其數量。 基板之移動方向請見第1圖中箭號所示。首先,待蝕 刻之基板10從進出站11進入處理裝置中,準備進入乾式蝕 刻製程。該基板1 0被移入該低真空傳送室1 4中,其後進入 乾式高真空傳送室1 5中。然後,基板1 0進入任一乾式蝕刻 室1 6, 1 7或1 8中進行乾式蝕刻(圖中所示為進入乾式蝕刻Page 12 1313489 V. Inventive Note (6) chamber; LLC) 14 , a dry high vacuum transfer chamber (TC) 15 , and three sets of dry #刻 chamber or process chamber 16, 17, 18 . Of course, in the present embodiment, although there are two sets of rotary deblockers and three sets of dry etching stations, in practical applications, the number can be changed as needed. The direction of movement of the substrate is shown by the arrow in Figure 1. First, the substrate 10 to be etched enters the processing apparatus from the inlet and outlet station 11 and is ready to enter the dry etching process. The substrate 10 is moved into the low vacuum transfer chamber 14 and thereafter into the dry high vacuum transfer chamber 15. Then, the substrate 10 is subjected to dry etching in any of the dry etching chambers 1, 6, 7 or 18 (shown as entering dry etching).
室1 7中)。在乾蝕刻完成後,將基板1 0退出蝕刻室區,重 行進入乾式高真空傳送室1 5再到低真空傳送室1 4,再送至 進出站1 1之傳送手臂上,.將該基板1 0送入旋轉式去光阻機 1 2或1 3中,進行光阻去除及洗淨。如此即可將乾蝕刻與去 光阻步驟整合在一起,亦可藉由去光阻步驟所用之試劑作 為乾蝕刻之後處理試劑,以避免金屬薄膜之腐蝕,同時縮 短製程時間。 為更清楚了解本發明可減省之時間,以下舉例說明。 以一厚度為500A (Ti)/ 6,000A (Al)/ 500A (Ti)Room 1 7). After the dry etching is completed, the substrate 10 is taken out of the etching chamber region, and then re-entered into the dry high vacuum transfer chamber 1 5 and then to the low vacuum transfer chamber 14 and then sent to the transfer arm of the inlet and outlet station 1 1 . It is sent to the rotary photoresist remover 1 2 or 1 3 to remove the photoresist and wash it. In this way, the dry etching and the photoresist removal step can be integrated, and the reagent used in the photoresist removal step can be used as a dry etching treatment reagent to avoid corrosion of the metal film and shorten the process time. In order to more clearly understand the time that can be saved by the present invention, the following examples are given. With a thickness of 500A (Ti) / 6,000A (Al) / 500A (Ti)
T i / A 1 / T i之金屬薄層為例,在習用技術中,如一次使用3 組蝕刻室,所需時間為:主蝕刻1 7 0秒,後處理6 0秒,除 靜電時間1 0秒,其單片蝕刻處理時間(t ac t t i me )為9 4 秒。但在本發明利用單乙醇胺(ME A )或其他鹼性化合物所 進行之後處理中,可僅使用1 5秒來進行傳統的後處理,緊For example, in the conventional technology, if three sets of etching chambers are used at one time, the required time is: main etching 170 seconds, post processing 60 seconds, static elimination time 1 At 0 seconds, the single-chip etching processing time (t ac tti me ) was 94 seconds. However, in the post-treatment of the present invention using monoethanolamine (ME A ) or other basic compounds, conventional post-treatment can be carried out using only 15 seconds.
第13頁 1313489 五、發明說明(Ό 接著進行光阻去除步驟,如此一來,其單片蝕刻處理時間 則只要7 9秒。因此,對任一基板而言,其單片處理時間可 縮短15-20秒左右。藉此產能可由原22.06k/month (基於 80 %機台利用率)提升至2 6. 2 4 k/month。當然,該後處理 時間並不限於1 5秒,而是視實際需要而定。或者,亦可根 本不進行傳統的後處理,就直接以光阻去除試劑來進行該 蝕刻步驟之後處理,同時去除光阻。Page 13 1313489 V. Description of the invention (Ό Next, the photoresist removal step is performed, so that the single-chip etching processing time is only 7 9 seconds. Therefore, the processing time per chip can be shortened for any substrate. -20 seconds or so. The capacity can be increased from the original 22.06k/month (based on 80% machine utilization) to 2 6. 2 4 k/month. Of course, the post-processing time is not limited to 15 seconds, but Depending on the actual needs, or the conventional post-treatment may be performed at all, the photoresist removal step is directly performed after the etching step, and the photoresist is removed.
另外,前已述及,利用熱水在完成乾式蝕刻後清洗基 板,也可達成防止鋁蝕刻面腐蝕的效果。不過,在本發明 中,繼旋轉式去光阻機所使用之光阻去除液體後,再以清 水清洗的製程,則可提供更為優異之效果,並可省略一清 洗步驟。Further, as described above, the effect of preventing corrosion of the aluminum etching surface can be achieved by cleaning the substrate after dry etching with hot water. However, in the present invention, the process of removing the liquid by the photoresist used in the rotary photoresist remover and then cleaning with water can provide a more excellent effect, and a cleaning step can be omitted.
綜上所述,在本發明中,由於將乾蝕刻步驟與旋轉式 去光阻步驟整合,而可在短時間内,使完成乾式蝕刻之基 板進行光阻去除。藉由去光阻液中之成分,置換出該鋁氯 化物中之氯,形成鋁薄膜蝕刻表面的保護層。故可解決鋁 薄膜乾式蝕刻中,鋁之腐蝕問題。除此之外,在習用技術 中,由於旋轉式去光阻機與乾式蝕刻機並未加以整合,經 過乾式蝕刻之基板必須另行輸送至旋轉式去光阻機台進行 光阻去除。相反地,本發明因將旋轉式去光阻整合至乾式 蝕刻裝置,故可將光阻去除步驟串連至乾式蝕刻步驟中, 不必分別進行乾式蝕刻與光阻去除。因此可縮短產品投到 產出的總體製程時間(c y c 1 e t i m e )。 以上是對本發明鋁薄膜乾式蝕刻方法及裝置之說明。In summary, in the present invention, since the dry etching step is integrated with the rotary photoresist removal step, the substrate subjected to dry etching can be removed in a short time. The chlorine in the aluminum chloride is displaced by removing the components in the photoresist to form a protective layer for the etched surface of the aluminum film. Therefore, the problem of corrosion of aluminum in dry etching of aluminum film can be solved. In addition, in the conventional technology, since the rotary photoresist remover and the dry etching machine are not integrated, the dry etching substrate must be separately transported to the rotary photoresist device for photoresist removal. Conversely, the present invention integrates the photoresist removal step into the dry etching step by integrating the rotary photoresist to the dry etching apparatus without separately performing dry etching and photoresist removal. Therefore, the overall process time (c y c 1 e t i m e ) of the product to the output can be shortened. The above is a description of the method and apparatus for dry etching of the aluminum film of the present invention.
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