TWI313489B - Post treatment of dry-etched metal film and system performing combined etching and stripping procedures - Google Patents

Post treatment of dry-etched metal film and system performing combined etching and stripping procedures Download PDF

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TWI313489B
TWI313489B TW091116187A TW91116187A TWI313489B TW I313489 B TWI313489 B TW I313489B TW 091116187 A TW091116187 A TW 091116187A TW 91116187 A TW91116187 A TW 91116187A TW I313489 B TWI313489 B TW I313489B
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photoresist
name
metal
dry
film
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Tehsin Lee
Brian Peng
Chung Jerry
Chih-Chung Liu
Chia-Wei Lin
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Toppoly Optoelectronics Corp
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02057—Cleaning during device manufacture
    • H01L21/02068—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers
    • H01L21/02071—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers the processing being a delineation, e.g. RIE, of conductive layers
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C22/00—Chemical surface treatment of metallic material by reaction of the surface with a reactive liquid, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals
    • C23C22/02—Chemical surface treatment of metallic material by reaction of the surface with a reactive liquid, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using non-aqueous solutions
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F4/00—Processes for removing metallic material from surfaces, not provided for in group C23F1/00 or C23F3/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
    • H01L21/32135—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only
    • H01L21/32136—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67207—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
    • H01L21/67745—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber characterized by movements or sequence of movements of transfer devices

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • Cleaning Or Drying Semiconductors (AREA)

Description

1313489 五、發明說明（1) 發明領域 本發明是關於一種金屬薄膜乾蝕刻之後處理方法，特 別是關於一種可以在金屬薄膜之乾蝕刻製程中，減少或避 免金屬薄膜腐姓的方法。此外，本發明亦關於一種姓刻與 去光阻步驟之整合系統，可在減少或避免金屬薄膜腐蝕之 外，縮短整體製程所需時間。 發明背景BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of post-dry etching of a metal thin film, and more particularly to a method for reducing or avoiding the rot of a metal film in a dry etching process of a metal thin film. In addition, the present invention is also directed to an integrated system of surname and photoresist removal steps that reduces the time required for the overall process in addition to reducing or avoiding corrosion of the metal film. Background of the invention

金屬薄膜，例如紹基質（aluminum-based)薄膜，在各 種電子元件的生產及製作中，都是非常重要的步驟。例如 在液晶顯示裝置（L C D )中，·以銘為基質（如I呂金屬或铭合 金）之薄膜可以用來作為導電金屬，以及反射金屬層。在 其他電子產品中，此類鋁基質薄膜也提供重要的功能。Metallic films, such as aluminum-based films, are very important steps in the production and fabrication of various electronic components. For example, in a liquid crystal display device (L C D ), a film of a substrate (e.g., Ilu metal or gold) can be used as the conductive metal and the reflective metal layer. In other electronic products, such aluminum matrix films also provide important functions.

以金屬導線之應用為例，在電子元件的製作過程中， 通常事先以各種適合的方法，形成一鋁薄膜，再利用蝕刻 方式去除非定義中的部份，留下所欲的鋁導線圖形 (Pattern )。在蝕刻步驟中，可以使用濕式蚀刻或乾式 蝕刻。其中，所謂濕式蝕刻是指利用蝕刻液去除不用的部 分，至於乾式蝕刻則是指利用反應氣體激化成電漿後以物 理或化學的方式，去除不用的部分，留下有用的部分。 在鋁基質薄膜之乾蝕刻過程中，因其通常是在氣氣 (C 12)或含氯氣體，例如氯化硼（B C 13)等蝕刻氣體中進行，Taking the application of the metal wire as an example, in the manufacturing process of the electronic component, an aluminum film is usually formed in advance by various suitable methods, and the undefined portion is removed by etching to leave the desired aluminum wire pattern ( Pattern ). In the etching step, wet etching or dry etching may be used. Here, the wet etching means that the unused portion is removed by the etching liquid, and the dry etching means that the unused portion is removed by physical or chemical means by activating the reaction gas to form a useful portion. In the dry etching process of the aluminum matrix film, it is usually carried out in an etching gas such as gas (C 12) or a chlorine-containing gas such as boron chloride (B C 13).

第8頁 1313489 五、發明說明（2)Page 8 1313489 V. Description of invention (2)

而該鋁基質膜會因鋁原子與氯自由基（radical)間之反應 形成氯化鋁（A 1 C 1 X )，且氯化鋁在與水反應後會形成可溶 性的氫氧化鋁Al(OH)x，造成鋁基質膜之腐蝕。因此，一 般在此乾蝕刻製程後，必須經過一或數種後處理，以避免 先蝕刻完成的薄膜在等待期間（Q - t i m e )遭腐蝕的問題。這 些後處理步驟舉例而言包括四氟化碳/氧（CF4/02 )電漿處 理、氣態水/氧氣（（H20(g)/02)電漿處理、碳氫氟化物 (CxHyF2)沈積氣體電漿處理、燒除（ashing)處理、以 及熱水洗淨處理等。不過，這些後處理方法或許可解決蝕 刻後鋁基質薄膜之腐蝕問題，但其一般需要較繁複的步驟 或較長的處理時間或多少損傷薄膜本身或造成後續製成的 困擾，因此，目前S需有一種新穎的銘基質薄膜乾式银刻 之後處理方法，該方法可以避免在鋁基質薄膜蝕刻後發生 腐蝕，並解決上述問題。 發明之目的The aluminum matrix film forms aluminum chloride (A 1 C 1 X ) due to the reaction between aluminum atoms and chlorine radicals, and aluminum chloride forms soluble aluminum hydroxide Al (OH) after reacting with water. )x, causing corrosion of the aluminum matrix film. Therefore, after this dry etching process, one or several post-treatments must be performed to avoid the problem that the first etched film is corroded during the waiting period (Q - t i m e ). Examples of these post-treatment steps include carbon tetrafluoride/oxygen (CF4/02) plasma treatment, gaseous water/oxygen ((H20(g)/02) plasma treatment, and hydrocarbon fluoride (CxHyF2) deposition gas). Slurry treatment, ashing treatment, hot water washing treatment, etc. However, these post-treatment methods may solve the corrosion problem of the aluminum matrix film after etching, but generally require complicated steps or long processing time. Or how much damage to the film itself or cause troubles in subsequent fabrication. Therefore, at present, S requires a novel post-silver engraving method for in-situ matrices, which can avoid corrosion after etching of the aluminum matrix film and solve the above problems. Purpose of the invention

本發明目的在於提供一種新穎的金屬薄膜乾蝕刻之後 處理方法，利用適合的後處理試劑避免生成可溶之金屬化 合物，且於洗除此後處理試劑後可回復原來的金屬蝕刻 面，因而避免該金屬之腐I虫。 本發明之另一目的在於提供一種新穎的蝕刻與去光阻 步驟之整合系統，可在進行乾蝕刻後處理之同時，對於製 程做適度的整合，以減省製程所需時間。The object of the present invention is to provide a novel post-drying treatment method for a metal thin film, which avoids the formation of a soluble metal compound by using a suitable post-treatment reagent, and recovers the original metal etched surface after washing the post-treatment reagent, thereby avoiding the metal. The rot I insect. Another object of the present invention is to provide a novel integrated etching and photoresist removal step that allows for a modest integration of the process while performing dry etching and subsequent processing to reduce the time required for the process.

第9頁 1313489 五、發明說明（3) 發明之簡述 依據本發明之金屬薄膜乾蝕刻之後處理方法，係以一 種可使蝕刻後之金屬薄膜形成不溶化合物護封層之後處理 試劑進行處理，以避免蝕刻後之金屬薄膜遭腐蝕。經本案 發明人之研究發現，一般用於乾蝕刻後光阻去除 (stripper)用之試劑，如單乙醇胺（monoethanolamine; Μ E A )或其他類似此作用之驗性化合物，可達成此目的。Page 9 1313489 V. DESCRIPTION OF THE INVENTION (3) Brief Description of the Invention The method for treating a metal thin film after dry etching according to the present invention is to treat a metal film which is formed after etching to form an insoluble compound protective layer, and then to process the reagent to Avoid corrosion of the metal film after etching. As a result of research by the inventors of the present invention, it is generally used for a photoresist for stripper after dry etching, such as monoethanolamine (Μ E A ) or other test compounds similar to this effect.

依據本發明之另一方面，一金屬薄膜乾钱刻之後處理 方法可與一光阻去除步驟利用一蝕刻與去光阻步驟之整合 系統加以整合，亦即在蝕刻程序後之短時間内即進行光阻 之去除步驟，利用該光阻去除步驟所使用之去光阻溶液中 之成分，與乾式钱刻後姓刻面之殘留含氯成分進行化學反 應，置換出氯，接著使此去光阻溶液中之成分脫離蝕刻 面，回復原來的金屬蚀刻面，如此可解決該金屬薄膜腐钮 之問題，同時可以減少製程所需時間。 上述本發明之目的及特點，可以由以下詳細說明，並 參照下列圖式而更形清楚。 圖式之說明According to another aspect of the present invention, a metal film dry etching process can be integrated with a photoresist removal step using an integrated system of etching and photoresist removal steps, that is, in a short time after the etching process. The step of removing the photoresist, using the components in the photoresist solution used in the photoresist removal step, chemically reacting with the residual chlorine component of the surnamed face after the dry money, replacing the chlorine, and then removing the photoresist The components in the solution are separated from the etched surface and restored to the original metal etched surface. This solves the problem of the metal film corrosion button and reduces the time required for the process. The above and other objects and features of the present invention will become more apparent from the description of the appended claims. Description of the schema

第1圖為本發明整合金屬薄膜乾蝕刻與光阻去除之系 統圖。Fig. 1 is a system diagram showing dry etching and photoresist removal of an integrated metal film of the present invention.

第10頁 1313489 五、發明說明（5) A1 ( : NH2-CH2-CH2-OH)x + x-Cl 其後，以異丙醇（isopropyl alcohol; IPA)或水取代單乙 醇胺繼續清洗該基板，則可洗除單乙醇胺，回復原來的鋁 姓刻面，因此不會發生腐#的現象。Page 10 1313489 V. Description of the invention (5) A1 ( : NH2-CH2-CH2-OH)x + x-Cl Thereafter, the substrate is continuously washed with isopropyl alcohol (IPA) or water instead of monoethanolamine. Then, the monoethanolamine can be washed away, and the original aluminum surname is restored, so that the phenomenon of rot # does not occur.

因此，本發明將原於一旋轉式去光阻機台上進行之光 阻去除程序整合至該乾蝕刻程序中作為該乾蝕刻程序之後 處理，並緊接著進行光阻去除，如此一來，不但可達成如 上避免金屬薄膜腐蝕之效果，亦可省去習用技術中刻意進 行之後處理步驟，因此可縮短單片基板處理時間與整體製 程時間。當然，在乾蝕刻步驟後，去光阻步驟前，亦可進 行習知之後處理步驟，以進一步確保防腐蝕效果，但此後 處理時間相較於乾蝕刻步驟與去光阻步驟分開進行之傳統 製程而言，可大幅縮短，以儘可能減少傳統後處理方式所 導致之處理時間較長或損傷薄膜之問題。 除此之外，因鋁的腐蝕主要是在乾式蝕刻步驟結束後 3 0分鐘内發生，如能將乾式蝕刻反應器與光阻去除器整 合，則可在鋁氯化物尚未開始腐蝕之前，即已進行光阻去 除步驟，利用去光阻溶液中之成分來置換氯，以保護蝕刻 面，同時進行光阻去除，因此可以縮短反應時間，且更進 一步縮短整體製程所需時間。Therefore, the present invention integrates the photoresist removal process performed on a rotary photoresist device into the dry etching process as the dry etching process, and then performs photoresist removal, thus not only The effect of avoiding the corrosion of the metal film can be achieved as above, and the post-processing step can be omitted in the conventional technology, thereby shortening the processing time of the single substrate and the overall processing time. Of course, after the dry etching step, before the photoresist removal step, the conventional post-processing steps may be performed to further ensure the anti-corrosion effect, but the processing time thereafter is different from the conventional etching process in which the dry etching step and the photoresist removal step are performed separately. In this case, it can be greatly shortened to minimize the problem of long processing time or damage to the film caused by the conventional post-processing method. In addition, the corrosion of aluminum occurs mainly within 30 minutes after the end of the dry etching step. If the dry etching reactor can be integrated with the photoresist remover, it can be before the aluminum chloride has begun to corrode. The photoresist removal step is performed by replacing the chlorine with the components in the photoresist solution to protect the etched surface and removing the photoresist at the same time, thereby shortening the reaction time and further shortening the time required for the overall process.

為達乾蝕刻後處理與光阻去除整合之目的，本發明提 供一種系統實施例，如第1圖所示。此系統包括一個進出 站（cassette station) 11 ，一組到兩組旋轉式去光阻機 (spin stripper) 12, 13 ， 一 低真空傳送室（load lockThe present invention provides a system embodiment for the purpose of integrating dry etching and photoresist removal, as shown in Figure 1. The system includes a cassette station 11 , a set of two sets of spin stripper 12, 13 , a low vacuum transfer chamber (load lock

第12頁 1313489 五、發明說明（6) chamber; LLC) 14 ，一乾式高真空傳送室（Transfer chamber，TC) 15 ，以及三组乾式#刻室或稱製程反應室 16, 17, 1 8。當然，在本實施例中，旋轉式去光阻機雖設 有2組，而乾式蝕刻站有3組，但在實際應用上，可以依據 需要而改變其數量。 基板之移動方向請見第1圖中箭號所示。首先，待蝕 刻之基板10從進出站11進入處理裝置中，準備進入乾式蝕 刻製程。該基板1 0被移入該低真空傳送室1 4中，其後進入 乾式高真空傳送室1 5中。然後，基板1 0進入任一乾式蝕刻 室1 6， 1 7或1 8中進行乾式蝕刻（圖中所示為進入乾式蝕刻Page 12 1313489 V. Inventive Note (6) chamber; LLC) 14 , a dry high vacuum transfer chamber (TC) 15 , and three sets of dry #刻 chamber or process chamber 16, 17, 18 . Of course, in the present embodiment, although there are two sets of rotary deblockers and three sets of dry etching stations, in practical applications, the number can be changed as needed. The direction of movement of the substrate is shown by the arrow in Figure 1. First, the substrate 10 to be etched enters the processing apparatus from the inlet and outlet station 11 and is ready to enter the dry etching process. The substrate 10 is moved into the low vacuum transfer chamber 14 and thereafter into the dry high vacuum transfer chamber 15. Then, the substrate 10 is subjected to dry etching in any of the dry etching chambers 1, 6, 7 or 18 (shown as entering dry etching).

室1 7中）。在乾蝕刻完成後，將基板1 0退出蝕刻室區，重 行進入乾式高真空傳送室1 5再到低真空傳送室1 4，再送至 進出站1 1之傳送手臂上，.將該基板1 0送入旋轉式去光阻機 1 2或1 3中，進行光阻去除及洗淨。如此即可將乾蝕刻與去 光阻步驟整合在一起，亦可藉由去光阻步驟所用之試劑作 為乾蝕刻之後處理試劑，以避免金屬薄膜之腐蝕，同時縮 短製程時間。 為更清楚了解本發明可減省之時間，以下舉例說明。 以一厚度為500A (Ti)/ 6,000A (Al)/ 500A (Ti)Room 1 7). After the dry etching is completed, the substrate 10 is taken out of the etching chamber region, and then re-entered into the dry high vacuum transfer chamber 1 5 and then to the low vacuum transfer chamber 14 and then sent to the transfer arm of the inlet and outlet station 1 1 . It is sent to the rotary photoresist remover 1 2 or 1 3 to remove the photoresist and wash it. In this way, the dry etching and the photoresist removal step can be integrated, and the reagent used in the photoresist removal step can be used as a dry etching treatment reagent to avoid corrosion of the metal film and shorten the process time. In order to more clearly understand the time that can be saved by the present invention, the following examples are given. With a thickness of 500A (Ti) / 6,000A (Al) / 500A (Ti)

T i / A 1 / T i之金屬薄層為例，在習用技術中，如一次使用3 組蝕刻室，所需時間為：主蝕刻1 7 0秒，後處理6 0秒，除 靜電時間1 0秒，其單片蝕刻處理時間（t ac t t i me )為9 4 秒。但在本發明利用單乙醇胺（ME A )或其他鹼性化合物所 進行之後處理中，可僅使用1 5秒來進行傳統的後處理，緊For example, in the conventional technology, if three sets of etching chambers are used at one time, the required time is: main etching 170 seconds, post processing 60 seconds, static elimination time 1 At 0 seconds, the single-chip etching processing time (t ac tti me ) was 94 seconds. However, in the post-treatment of the present invention using monoethanolamine (ME A ) or other basic compounds, conventional post-treatment can be carried out using only 15 seconds.

第13頁 1313489 五、發明說明（Ό 接著進行光阻去除步驟，如此一來，其單片蝕刻處理時間 則只要7 9秒。因此，對任一基板而言，其單片處理時間可 縮短15-20秒左右。藉此產能可由原22.06k/month (基於 80 %機台利用率）提升至2 6. 2 4 k/month。當然，該後處理 時間並不限於1 5秒，而是視實際需要而定。或者，亦可根 本不進行傳統的後處理，就直接以光阻去除試劑來進行該 蝕刻步驟之後處理，同時去除光阻。Page 13 1313489 V. Description of the invention (Ό Next, the photoresist removal step is performed, so that the single-chip etching processing time is only 7 9 seconds. Therefore, the processing time per chip can be shortened for any substrate. -20 seconds or so. The capacity can be increased from the original 22.06k/month (based on 80% machine utilization) to 2 6. 2 4 k/month. Of course, the post-processing time is not limited to 15 seconds, but Depending on the actual needs, or the conventional post-treatment may be performed at all, the photoresist removal step is directly performed after the etching step, and the photoresist is removed.

另外，前已述及，利用熱水在完成乾式蝕刻後清洗基 板，也可達成防止鋁蝕刻面腐蝕的效果。不過，在本發明 中，繼旋轉式去光阻機所使用之光阻去除液體後，再以清 水清洗的製程，則可提供更為優異之效果，並可省略一清 洗步驟。Further, as described above, the effect of preventing corrosion of the aluminum etching surface can be achieved by cleaning the substrate after dry etching with hot water. However, in the present invention, the process of removing the liquid by the photoresist used in the rotary photoresist remover and then cleaning with water can provide a more excellent effect, and a cleaning step can be omitted.

綜上所述，在本發明中，由於將乾蝕刻步驟與旋轉式 去光阻步驟整合，而可在短時間内，使完成乾式蝕刻之基 板進行光阻去除。藉由去光阻液中之成分，置換出該鋁氯 化物中之氯，形成鋁薄膜蝕刻表面的保護層。故可解決鋁 薄膜乾式蝕刻中，鋁之腐蝕問題。除此之外，在習用技術 中，由於旋轉式去光阻機與乾式蝕刻機並未加以整合，經 過乾式蝕刻之基板必須另行輸送至旋轉式去光阻機台進行 光阻去除。相反地，本發明因將旋轉式去光阻整合至乾式 蝕刻裝置，故可將光阻去除步驟串連至乾式蝕刻步驟中， 不必分別進行乾式蝕刻與光阻去除。因此可縮短產品投到 產出的總體製程時間（c y c 1 e t i m e )。 以上是對本發明鋁薄膜乾式蝕刻方法及裝置之說明。In summary, in the present invention, since the dry etching step is integrated with the rotary photoresist removal step, the substrate subjected to dry etching can be removed in a short time. The chlorine in the aluminum chloride is displaced by removing the components in the photoresist to form a protective layer for the etched surface of the aluminum film. Therefore, the problem of corrosion of aluminum in dry etching of aluminum film can be solved. In addition, in the conventional technology, since the rotary photoresist remover and the dry etching machine are not integrated, the dry etching substrate must be separately transported to the rotary photoresist device for photoresist removal. Conversely, the present invention integrates the photoresist removal step into the dry etching step by integrating the rotary photoresist to the dry etching apparatus without separately performing dry etching and photoresist removal. Therefore, the overall process time (c y c 1 e t i m e ) of the product to the output can be shortened. The above is a description of the method and apparatus for dry etching of the aluminum film of the present invention.

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Claims (1)

1313489 六、申請專利範圍 1 . 一種蝕刻與去光阻步驟之整合系統，包括 至少一乾蝕刻室，於其中利用一光阻，對於一基板上 之金屬薄膜進行乾蝕刻，以得到一受光阻覆蓋之表面以及 一未受光阻覆蓋之金屬裸露面； 至少一光阻去除清洗室，於其中同時進行該金屬薄膜 之乾蝕刻後處理與光阻去除步驟，以去除該金屬薄膜表面 上之光阻，同時於該金屬裸露面上生成一護封層，並於光 阻去除完成後進行一清洗步驟，以洗除該護封層，使回復 裸露之金屬表面；1313489 6. Patent application scope 1. An integrated system for etching and photoresist removal steps, comprising at least one dry etching chamber in which a metal film on a substrate is dry etched by a photoresist to obtain a photoresist-covered layer. a surface and an exposed surface of the metal not covered by the photoresist; at least one photoresist removing the cleaning chamber, wherein the dry etching after the metal film and the photoresist removing step are simultaneously performed to remove the photoresist on the surface of the metal film, and simultaneously Forming a protective layer on the exposed surface of the metal, and performing a cleaning step after the photoresist removal is completed to wash the protective layer to restore the exposed metal surface; 一輸送裝置，用以輸送一或多個該基板進出一或多個該乾 式姓刻室及一或多個該光阻去除清洗室。 2. 如申請專利範圍第1項之系統，包括複數個乾蝕刻室與 複數個光阻去除清洗室，以提升系統效能。 3. 如申請專利範圍第1項之系統，其中每一光阻去除清洗 室中均包括一旋轉式去光阻機（spin stripper)。 4. 如申請專利範圍第1項之系統，更包括一低真空傳送室 (load lock chamber; LLC) 與一乾式高真空傳送室 (Transfer chamber，TC)，位於該乾式敲刻室以及該光阻 去除清洗室間。A transport device for transporting one or more of the substrates into and out of one or more of the dry-type chambers and one or more of the photoresist-removing cleaning chambers. 2. The system of claim 1 includes a plurality of dry etching chambers and a plurality of photoresist removal cleaning chambers to improve system performance. 3. The system of claim 1, wherein each of the photoresist removal cleaning chambers includes a spin stripper. 4. The system of claim 1, further comprising a load lock chamber (LL) and a dry transfer chamber (TC) located in the dry stencil and the photoresist Remove the cleaning room. 5. 一種金屬薄膜乾蝕刻之後處理方法，該蝕刻後之金屬 薄膜包括一受光阻覆蓋之表面以及一未受光阻覆蓋之金屬 裸露面，該方法包括下列步驟： 以一光阻去除試劑去除該金屬薄膜上之光阻，並以同一光 阻去除試劑處理該金屬薄膜之金屬裸露面，使反應生成一5. A method of post-etching a metal thin film, the etched metal film comprising a photoresist-covered surface and a metal exposed surface not covered by the photoresist, the method comprising the steps of: removing the metal by a photoresist removal agent The photoresist on the film, and the exposed surface of the metal film is treated with the same photoresist removal reagent to generate a reaction 第17頁Page 17 -o-L-yj. I sa i u修正 年年月^ - -. a. 案號：，91116187 修正 (-f o| L ^/^\〇^ 上各櫚由本局填註) 發明專利說明書 τ^. 中文 金屬薄膜乾姓刻之後處理方法以及敍刻與去光阻步驟之整合系統 、 發明名稱 英文 Post Treatment of Dry-Etched Metal Film and System Performing Combined Etching and Stripping Procedures 姓名 (中文） 1. 李德興 2. 彭中宏 二 發明人 今生名 (英文） 1. Tehsin Lee 2. Brian Peng 國籍 1.中華民國2.中華民國 住、居所 1. 鼻蘭縣冬山鄉義成路三段483巷4號Να 4, Lane 483，Sec. 3, Yicheng Rd·. Dungshan Shiang, I lan, Taiwan 269, R. 0. C. 2. 高雄鳳山市中華街 11Ϋ號 No. 1Ϊ7, Junghua St.，Fengshan City， Kaohsiung, Taiwan 830, R. 0. C. _名 1.統寳光電股份有限公司 尹名 ^稱） (央 i：) 1. loppoly Optoelectronics Corp. 國籍 1.中華民國 、 申請人 f事務党 i·科學工業園區苗栗縣竹南鎮科中路12號 No. 12, Ke Jumg Rd., Science-Based Industrial Park, Chu-Nan 350, Miao-Li County, Taiwan, R. 0. C. 代表人 姓名 (中文) ------ 1.陳瑞聰 代表人 S名 (英文） •PUKU _ 1.Jui-Tsung Chen -----oL-yj. I sa iu revised year and year ^ - -. a. Case No.: 91116187 Correction (-fo| L ^/^\〇^ Each palm is filled by this Council) Patent Description τ^. Post-processing method for metal film dry etching and integration of de-etching and photoresist removal steps, name of the invention (English) 1. Li Dexing 2. Peng Zhong Hong Er inventor's name for this life (English) 1. Tehsin Lee 2. Brian Peng Nationality 1. Republic of China 2. Republic of China residence and residence 1. No. 4, Lane 483, Section 3, Yicheng Road, Dongshan Township, Nalan County Να 4, Lane 483, Sec 3, Yicheng Rd·. Dungshan Shiang, I lan, Taiwan 269, R. 0. C. 2. 11th Zhonghua Street, Fengshan City, No. 1Ϊ7, Junghua St., Fengshan City, Kaohsiung, Taiwan 830, R. 0. C. _Name 1. Tongbao Optoelectronics Co., Ltd. Yin Ming ^) (Central i:) 1. loppoly Optoelectronics Corp. Nationality 1. Republic of China, Applicant f Affairs Party i·Science Industrial Park Miaoli County Zhunan No. 12, Ke Jumg Rd., No. 12, Zhenke Middle Road, Science-Based Industrial Park, Chu-Nan 350, Miao-Li County, Taiwan, R. 0. C. Representative Name (Chinese) ------ 1. Chen Ruicong Representative S Name (English) • PUKU _ 1 .Jui-Tsung Chen ---- 1313489 申請日期： I案號： 類別： (以上各欄由本局填註) 發明專利說明書 中文 、 發明名稱 英文 姓名 (中文） 3. 鍾兆雄 4. 劉馳中 發明人 姓名 (英文） 3. Jerry Chung 4. Chih-Chung Liu 國籍 3.中華民國4.中華民國 住、居所 3. 桃園縣中壢市民權路19巷27號 No. 27, Lane 19, Minchiuan M.， Jungli City, Taoyuan, Taiwan 320，R. 0. C. 4. 新竹市光華二街80巷22弄 13號2樓 2F1.，No. 13, Alley 22，Lane 80， Guanghua 2nd St., Hsinchu, Taiwan 300, R. 0. C. 姓名 (名稱） (中文5 姓名 (名稱） (英文） 國籍 申請人 住、居所 (事務所) 代表人 姓名 (中文） 代表人 姓名 (英文）1313489 Application Date: I Case No.: Category: (The above columns are filled by this Council) Invention Patent Specification Chinese, Invention Name English Name (Chinese) 3. Yan Zhaoxiong 4. Liu Chizhong Inventor Name (English) 3. Jerry Chung 4. Chih -Chung Liu Nationality 3. Republic of China 4. Republic of China Residence and Residence 3. No. 27, Lane 19, Minquan Road, Zhongli, Taoyuan County No. 27, Lane 19, Minchiuan M., Jungli City, Taoyuan, Taiwan 320, R. 0 C. 4. 2F1., 2nd Floor, No. 13, Lane 20, Lane 80, Guanghua Second Street, Hsinchu City, No. 13, Alley 22, Lane 80, Guanghua 2nd St., Hsinchu, Taiwan 300, R. 0. C. Name (Name (Chinese 5 Name (Name) (English) Nationality Applicant Residence, Residence (Company) Representative Name (Chinese) Representative Name (English) 1313489 申請曰期： 1案號： 類別： (以上各欄由本局填註) 發明專利說明書 中文 、 發明名稱 英文 姓名 (中文） 5.林嘉尉 發明人 姓名 (英文） 5. Chia-Wei Lin 國籍 5.中華民國 住、居所 5.新竹縣芎林鄉文山路581巷20號 No. 20，Lane 581，Wenshan Rd·， Chiunglin Shiang, Hsinchu, Taiwan 307, R. 0. C. 姓名 (名稱） (中文5 - 姓名 (名稱） (英文） 三 申請人 國籍 住、居所 (事務所) 代表人 姓名 (中文） 代表人 姓名 (英文）1313489 Application period: 1 Case number: Category: (The above columns are filled by this Council) Invention patent specification Chinese, invention name English name (Chinese) 5. Lin Jialu inventor name (English) 5. Chia-Wei Lin Nationality 5. Residence and Residence of the Republic of China 5. No. 20, No. 20, Lane 581, Wenshan Road, Yulin Township, Hsinchu County, Lane 581, Wenshan Rd·, Chiunglin Shiang, Hsinchu, Taiwan 307, R. 0. C. Name (name) ( Chinese 5 - Name (Name) (English) Three applicants' nationality residence, residence (office) Representative name (Chinese) Representative name (English) 1313489 ----案號 91116187 五、發明說明（4) 圖式元件之說明 旋轉式去光阻機丨2 i 3 乾式高真空傳送室15 製程反應室1 6， 1 7， 1 8 發明之詳細說明1313489 ---- Case No. 91116187 V. Description of the invention (4) Description of the graphic elements Rotary de-resisting machine 丨 2 i 3 Dry high vacuum transfer chamber 15 Process chamber 1 6, 1 7, 1 8 Details of the invention Description 進出站1 1 低真空傳送室1 4 乾式蝕刻室或稱 問題主要 應，並與 物’而於 為，如能 之金屬化 但前提是 層。因此 以達此目 —般 阻去除機 膜用之光 其他類似 單乙醇胺 欲之護封 反應式如 係因活 其後續 後續處 在上述 合物， 此不溶 本案發 的。 而言， 台上進 阻層。 化合物 或其他 層。以 下孟 在金屬 性較高 處理中 理遭到 製程中 則可作 之金屬 明人致 餘刻程 行一光 就鋁或 來進行 類似驗· 鋁薄膜 薄膜之乾 之金屬與 環境之水 洗除所導 ，於乾式 為該金屬 化合物須 力於研究 序之後， 阻去除程 銘合金而 光阻去除 性化合物 與單乙醇 蝕刻製程中，金屬腐蝕的 #刻氣體中之氯自由基反 氣反應生成可溶氫氧化 致。因此’本案發明人認 蝕刻步驟後立即生成不溶 薄膜餘刻表面之護封層， 可再還原成所欲之金屬 一種適合的後處理試劑， 會將基板移至一旋轉式光 序，以除去定義該金屬薄 言，一般使用單乙醇胺或 。本案發明人發現，此種 恰可使該金屬薄犋形成所 胺光阻去除4劑為例，其 AlClx + h2n-ch2-ch2-oh ~ 一一〉Inlet and Out Station 1 1 Low Vacuum Transfer Chamber 1 4 The dry etch chamber or problem is mainly related to, and the object is, if possible, metallized, but only the layer. Therefore, in order to achieve this purpose, the light used for removing the membrane is similarly blocked. Other similar monoethanolamine is intended to protect the seal. The reaction formula is such that it is followed by the subsequent compound in the above compound, which is insoluble in the case. In terms of the resistance layer on the stage. Compound or other layer. The following Meng in the higher metallization treatment process can be used in the process of metal Ming people to make a journey to a light on the aluminum or to carry out a similar test · aluminum film film dry metal and environmental water wash guide In the dry type, the metal compound is required to be subjected to the research sequence, and the photoresist is removed from the process and the photoresist is removed. In the single ethanol etching process, the chlorine radical in the metal etching gas reacts with the chlorine gas to form a soluble hydrogen. Oxidation. Therefore, the inventor of the present invention immediately formed the protective layer of the insoluble film residual surface immediately after the etching step, and can be reduced to a desired metal. A suitable post-treatment reagent will move the substrate to a rotating light sequence to remove the definition. The metal is thin, generally using monoethanolamine or. The inventors of the present invention have found that this kind of metal thinning can form an amine photoresist removal agent as an example, and its AlClx + h2n-ch2-ch2-oh ~ one by one> 1313489 案號 911im只71313489 Case No. 911im only 7 六、申請專利範圍 —*=========-3^mn，i _ 不溶於水之護封層；以及 於光阻去除後以一清洗試劑 金屬表面。 * 5亥護封層，使回復裸露之 6.如申請專利範圍第c； 項之全·；I 法，其中該金屬薄膜係 “屬溥膜乾蝕刻之後處理方 7· 法 8. 法 9. 法 Ι-^Λ 丨、jj fx/ψ 如申請專利範圍第6項土貝（aluminum-based)薄膜。 ，其中該鋁基質薄胺之金屬薄膜乾蝕刻之後處理方 如申請專利範圍苐6項 ’專膜或一 is合金薄膜。 ，其中該光阻去除識j之金屬薄膜乾蝕刻之後處理方 如申請專利範圍第8為單乙醇胺（MEA)。 ，其中該清洗試劑係、琴金屬薄膜乾姓刻之後處理方 IPA)及 / 或水。 異丙醇（isopropyl alcohol ; 10.如申請專利範圍第e 七入β μ 总机姑入M U第5項之金屬薄膜乾钱刻之後處理方 法，係於該金屬薄膜乾餘刻完成後立即進行。 11 ·如申明專利範圍第5項之金屬薄膜乾蝕刻之後處理方 更包括於引入該光阻去除試劑前進行一短時間之金屬 薄膜預處理步驟’以進—步保護該未受光阻覆蓋之金屬裸 露面。 12·如申請專利範圍第11項之金屬薄膜乾蝕刻之後處理方 法’其中該金屬薄膜預處理步驟係選自一或多種如下之處 '法，包括四氟化碳/氧（CF4/〇2 )電漿處理、氣態水/ ，氣（（H20(g)/〇2)電漿處理、碳氫氟化物（CxHyF2 )沈積 氣體電衆處理、燒除（ashing )處理及/或熱水洗淨處 理。Sixth, the scope of application for patents —*=========-3^mn, i _ water-soluble protective layer; and after cleaning the photoresist to clean the metal surface. * 5 护 护 封 封 封 封 封 封 封 封 封 封 封 封 封 封 封 封 封 封 封 封 封 封 封 封 封 封 封 封 封 封 封 封 封 封 封 封 封 封 封 封 封 封 封 封 封 封 封 封 封Ι Ι Λ Λ j j j j j j j j j j j j j j j j j j j j j j j j j ψ j j ψ ψ ψ ψ ψ ψ ψ ψ ψ ψ ψ ψ ψ ψ ψ ψ ψ ψ ψ ψ ψ ψ ψ a film or an is alloy film, wherein the photoresist is removed after the dry etching of the metal film, such as the patent application range 8 is monoethanolamine (MEA), wherein the cleaning reagent system, the metal film of the piano is dry After the treatment IPA) and / or water. Isopropyl alcohol (isopropyl alcohol; 10. If the patent application scope e e seventh into the β μ final machine into the MU section 5 metal film dry money after the processing method, attached to the metal The film is dried immediately after the completion of the film. 11 · The dry film after the dry etching of the metal film according to the fifth paragraph of the patent scope includes a metal film pretreatment step for a short time before the introduction of the photoresist removal agent. Step protection The exposed surface of the metal covered by the photoresist. 12. The method after the dry etching of the metal film according to the scope of claim 11 wherein the metal film pretreatment step is selected from one or more of the following methods, including carbon tetrafluoride /Oxygen (CF4/〇2) plasma treatment, gaseous water/, gas ((H20(g)/〇2) plasma treatment, hydrocarbon fluoride (CxHyF2) deposition gas electricity treatment, burning (ashing) treatment And / or hot water wash treatment. 第18頁 2002.07.30.018Page 18 2002.07.30.018
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TWI467653B (en) * 2011-09-07 2015-01-01 Au Optronics Corp Method of forming patterned conductive oxide layer and etching apparatus

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KR101291794B1 (en) * 2006-03-17 2013-07-31 엘지디스플레이 주식회사 System for manufacturing liquid crystal display panel and liquid crystal display panel using the same
KR100770792B1 (en) * 2006-07-31 2007-10-26 세메스 주식회사 Dry etcher comprising etching module and cleaning module

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US6006764A (en) * 1997-01-28 1999-12-28 Taiwan Semiconductor Manufacturing Company, Ltd. Method of stripping photoresist from Al bonding pads that prevents corrosion
US6815151B2 (en) * 1997-09-05 2004-11-09 Tokyo Ohika Kogyo Co., Ltd. Rinsing solution for lithography and method for processing substrate with the use of the same

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* Cited by examiner, † Cited by third party
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TWI467653B (en) * 2011-09-07 2015-01-01 Au Optronics Corp Method of forming patterned conductive oxide layer and etching apparatus

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