529118 A7 R7 五、發明說明（ 發明 發明係與一種半導體保護層製程有關，特别是與一 種把降低保護層含氟量之製程方法有關。發明背景： 在眾多如個人電腦、大型主機、通訊設備、及各種消 費性電子產品等電子系統的應用之中，封裝結構在提供系 統内部連結的應用上扮演著極爲重要的角色，藉由封装結 構’可於系統内部的各個元件及晶片間形成電性的連接’ 以達成系統設計上的功能與需求。爲了確保系統的功能及 操作特性，如何確保一完成半導體製程之積體電路於進行 封裝過程中，能免於外界之破壞，即是首要課題。 (請先閲讀背面之注意事項再填寫本頁) ----- 1T---- 經濟部智慧財產局員工消費合作社印制农 在半導體製程中，一旦積體電路（1〇完_〜 .，一 製私是必要的’此一保護製程是沉積保護層於晶片表面之 取上層。此保護層係將元件結構封住與外界環境隔絶亦被 視爲一防止刮傷之保護層（Scratch pr〇tecti〇n films)。例 如，此保護層可防止水氣及其它污染源侵入積體電路封裝 (IC package)，且預防積體電路封裝（packaging)及組裝 (Assembly)時發生機械及化學傷害，而一般此種保護層結構 通常具有兩層結構，於接近元件之一層爲一般介電層，通 常爲PSG或Si”4，而於其上再披覆一層聚醯亞胺^ 529118 Λ7 B7 經濟部智慧財產局員工消費合作社印製 i、發明說明（ (polyimide ) 0 於傳統技術中，保護結構之作法如第一 A圖和第_ B 圖中所示，請參閱第一 A圖，其中基板1〇中具有金屬銲墊 12 ( Bonding Pad)，而基板1〇係代表其中的元件及多層金 屬連線均已完成之狀態，接著在基板丨〇上沈積第一保護層 14(pass丨vationlayei*)，並於其上塗佈一層光阻層a，以傳統 之微影技術來形成圖案化的光阻層丨6，並進行保護層1 4蝕 刻以露出金屬銲墊1 2，最後移除光阻層1 6。接著沈積第二 層以聚醯亞胺（Polyimide)爲材質之保護層18，參閲第一 b 圖，首先將聚Si亞胺18塗佈於第一保護層14上，由於所塗 佈之聚醯亞胺材料，具有光化學反應群（Photoreactive Groups)，可使材料於受紫外光照射時產生光致交聯 (Photocrosslinking)反應，而使曝光與非曝光區域的材料有 不同之溶解速度，因此直接於其上定義出金屬銲墊12並進 行微影，來暴露出金屬銲墊1 2，即完成該保護結構製程， 然而此種方法需進行兩次微影製程，因此，在製程上並不十 分方便，且會造成製程成本之增加。 發明目的及概述： 鑒於上述的發明背景中，傳統保護結構製程’往往需要 需進行兩次微影製程，因此，在製程上並不十分方便’且會 造成製程成本之增加，不符合經濟效益。因此’本發明之主 I紙張尺度適用中國國家標準（CNS)A4規格（21G x 297公餐） ------ -------------^ --------« (請先閱讀背面之注意事項再填寫本頁) 529118 A7 B7 經濟部智慧財產局員工消費合作社印製 提供一 並於該 體基材 上表面 曝光與 導體區 案於保 程，用 含量； 降低表 五、發明說明（ 要目的，即是針對上述之缺點，提出—種解決之方、， 聚酿亞胺材料因爲本身所具有之光化學反應：：利用 層’降低-道微影製程，同時於保護層蝕刻製程鸟光阻 入一道熱製程來降低泉醯亞胺層上所吸附氟 後，加 成後續金屬銲墊黏接能力降低的現象。 ’、 避免造 本發明中聚醯亞胺層製程方法包含以下步骤. 半導體基材’該半導體基材上包括主動和被動元件： +體基材上埋設導體區域，此導體區域上表面盘半導 :表”平面；形成保護層於導體區域及半導體基材 ，接考·形成一聚醯亞胺光阻層於該保護層上； 顯影形成一聚醯亞胺光阻圖案於保護層上，以定式 Ϊ居？含氟氣體實施乾性触刻來轉移聚酶亞胺光阻： 來降低s:置该半導體基材於—熱爐管中以實施熱製 :降低因違行乾蝕刻而殘留於聚酿亞胺表面之氟原子 將完成熱製程之半導體基材移出 ^ 面氟原子製程。 ^熱爐管中’即完成該 屬式簡單規aq ： 由以下本發明中較佳1 太众 〜實施例又細節描述，可以對 本發明t目的、觀點及優點右 *政n 有更佳的了解。同時參考下列 本發明之圖式加以説明：529118 A7 R7 V. Description of the invention (The invention is related to a semiconductor protective layer process, especially to a process method to reduce the fluorine content of the protective layer. Background of the invention: In many such as personal computers, mainframes, communication equipment, In the application of electronic systems such as various consumer electronics products, the packaging structure plays an extremely important role in providing applications with internal connections to the system. Through the packaging structure, electrical components can be formed between various components and chips in the system. Connected 'to achieve the functions and requirements of system design. In order to ensure the function and operating characteristics of the system, how to ensure that the integrated circuit that completes the semiconductor process can be protected from external damage during the packaging process is the primary issue. Please read the precautions on the back before filling out this page) ----- 1T ---- The Intellectual Property Bureau, Ministry of Economic Affairs, Employee Consumer Cooperatives, Printed Agriculture in the semiconductor manufacturing process, once the integrated circuit (10 finished_ ~., A system is necessary. 'This protection process is to deposit a protective layer on the surface of the wafer and take the upper layer. This protective layer is a component structure Isolation from the outside environment is also considered as a scratch-resistant protective layer. For example, this protective layer prevents moisture and other pollution sources from entering the IC package, and prevents Mechanical and chemical damage occurs during packaging and assembly of integrated circuits. Generally, this protective layer structure usually has a two-layer structure. One layer close to the component is a general dielectric layer, usually PSG or Si "4 It is covered with a layer of polyimide ^ 529118 Λ7 B7 Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs i. Invention Description ((polyimide) 0 In traditional technology, the protection structure is as shown in Figure A As shown in Figure _B, please refer to Figure A, where the substrate 10 has a metal bonding pad 12 (Bonding Pad), and the substrate 10 represents the state in which the components and the multilayer metal connections are completed. Then, a first passivation layer 14 (passation vlaylayei *) is deposited on the substrate, and a photoresist layer a is coated thereon, and a patterned photoresist layer is formed by a conventional lithography technique, and Perform a protective layer 1 4 etch The metal pad 12 is exposed, and the photoresist layer 16 is finally removed. Next, a second protective layer 18 made of polyimide (Polyimide) is deposited. Referring to the first figure b, the polySiimine is firstly deposited. 18 is coated on the first protective layer 14. The coated polyimide material has Photoreactive Groups, which can cause a photocrosslinking reaction when the material is exposed to ultraviolet light. As the materials of the exposed and non-exposed areas have different dissolution speeds, the metal pads 12 are defined directly thereon and lithography is performed to expose the metal pads 12 to complete the protective structure process. However, This method requires two lithographic processes, so it is not very convenient in terms of process, and it will increase the cost of the process. Object and summary of the invention: In view of the above background of the invention, the traditional protective structure process 'often requires two lithographic processes, so it is not very convenient in terms of process' and it will increase the cost of the process, which is not in line with economic benefits. Therefore, the paper size of the main paper of the present invention is applicable to the Chinese National Standard (CNS) A4 specification (21G x 297 meals) ------ ------------- ^ ----- --- «(Please read the precautions on the back before filling out this page) 529118 A7 B7 Printed and provided by the Consumers' Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs, together with the exposure of the upper surface of the body substrate and the conductor area. Decrease Table 5. Description of the invention (The main purpose is to address the above-mentioned shortcomings, and propose a solution, the photochemical reaction of the polyimide material because of its own :: using the layer 'reduction-dao lithography process At the same time, in the protective layer etching process, bird photoresist is added to a thermal process to reduce the fluorine adsorbed on the sulfonium imine layer, and the subsequent reduction of the bonding ability of the metal pads is added. ', Avoid making the polyfluorene in the present invention. The amine layer process method includes the following steps. A semiconductor substrate includes active and passive components on the semiconductor substrate: a conductor region is buried in the body substrate, and the upper surface of the conductor region is a semiconducting surface: a surface; a protective layer is formed on the conductor; Areas and semiconductor substrates A polyimide photoresist layer is formed on the protective layer; a polyimide photoresist pattern is formed on the protective layer by development, and a stereotyped? Fluorine-containing gas is used to dry-etch to transfer the polyimide photoresist: To reduce s: Place the semiconductor substrate in a hot furnace tube to perform thermal processing: reduce the fluorine atoms remaining on the surface of the polyimide due to illegal dry etching. Remove the semiconductor substrate that has completed the thermal process ^ fluorine atoms on the surface ^ In the hot furnace tube, the simple formula aq is completed: The following is a description of the preferred embodiment 1 in the present invention. The embodiments are described in detail, and the purpose, perspective, and advantages of the present invention can be better. At the same time, it is explained with reference to the following drawings of the present invention:
弟一 A至第一 C圖所示良、人田L 爲於瑕上層之金屬銲墊上形成 -------------------^--------- (請先閱讀背面之注意事項再填寫本頁) 529118 1 2 金屬銲塾 16 光阻層 20 1金屬銲墊 A7 B7 五、發明說明（） 保護層及聚醯亞胺層之截面示意圖； 第一圖所不爲金屬銲墊與氟反應之表面缺陷放大圖； 圖號對照説 1 0基板 1 4保護層 18，20聚醯亞胺層 202表面缺陷 發明詳細説明： """ ""— —-------- 在不限制本發明之精神及應用範圍之下，以下即以一 實施例’介結本發明之實施；熟悉此領域技藝者，在瞭解 本發明之精神後，當可將此種製程應用於各種聚醯亞胺層 之製私中。以降低微影製程步骤，同時將以含氟氣體進行 保護層製程後，吸附於聚醯亞胺上之氟含量降低，以減少 後續製程中殘留之氟與金屬銲墊發生反應，避免造成金屬銲 塾缺陷’影響了金屬銲墊後續之黏接能力，本發明之應用當 不僅限於以下所述之實施例。 於本發明之圖示中，爲了便於明瞭起見，相同的材料 鍵層都以同樣的標號加以標示，且必需注意的是，各層之比 例並未完全依照實際之厚度而加以燴製。再者，下面將要描 本紙張尺度適用中國國家標準（CNS)A4規格（210x 297公釐） -------------------^—------- (請先閱讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 529118 Λ7 B7 五、發明說明（） 迷的製程步驟中，由於包含許多爲人所熟知的微影及蝕刻製 程，因此有許多步驟將不在此加以詳述。 (請先閲讀背面之注意事項再填寫本頁) 參閲第一 c圖’此截面示意圖係爲本發明之較佳具體 實施例所使用的保護層結構。於此圖中，使用一傳統技^ 將一半導體結構形成於一基板10之上，基板10將包括半 導體晶圓，及形成於此半導體晶圓之中的主動和被動元件 等’並且根據需求而於晶圓之上形成多重金屬内連線 (multUevennterconnects)，但爲了簡化起見，將只以基板1〇 表示。同時此一半導體結構亦包括一金屬銲墊1 2，例如一 金屬線’形成此金屬銲墊12之主要步驟包含沉積一金屬 層於此基板1 0之上以及定義此金屬層於此基板丨〇之上以 便形成此金屬銲墊12，這時，整個積體電路架構已完整呈 現於晶片上，接著沉積保護這些電路與元件之保護層i 4 (Passivation )於晶片上，其係以ApcvD或pECVD之方 法沈積，而所使用之材料通常爲Si3N4與PSG或。 當沈積完成後，接下來形成作爲銲墊（Bonding Pad ) 經濟部智慧財產局員工消費合作社印製 之用的金屬銲墊12，利用蝕刻方法使其暴露出來，以便進 行晶片之構裝（Packaging )。於本發明之最佳實施例中， 是以聚酿亞胺材料做爲光阻之用，可以例如旋塗之方式形成 將聚酸亞胺（polyimide)光阻層20覆蓋於晶圓之上，接著 以曝光及顯影技術來形成圖案化的聚醯亞胺光阻層2〇，並 暴露出保護層14。接著再以此圖案化聚醯爻胺光阻層2〇 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 529118 A7 B7 經濟部智慧財產局員工消費合作社印製 -------------------1--------- (請先閱讀背面之注意事項再填寫本頁) 五、發明說明（） 爲蝕刻罩幕’進行保護層14的蝕刻步骤，而蝕刻此保護層 (蝕刻氣體可以爲含有氟之電漿，例# C2f6、C3F8、A戋 SF,等氣體，來提供含氟原子的反應氣體。 、由於聚醞亞胺材料具有低介電常數、良好之化學與熱穩 疋性和絶緣性’因此於曝光及顯影完成後，該由聚醯亞胺材 料所構成之光阻層仍保留於保護層14丨，以對晶片提供更 良好之保護作用。 但由於聚醯亞胺20於微影過程中是暴露於含氟氣體 中，因此當触刻完成後，會有部分含氣氣體吸附於聚驢亞 胺20之表面上，且此聚酸亞胺2〇於触刻完成後係保留於 晶片上，並不進行剥離去除工作，因此吸附於聚驢亞胺2〇 表面上之含氟氣體，會與金屬銲墊12發生反應，而於金屬 銲墊12之表面產生缺陷，造成金屬銲墊之黏接能力下降。 參閲第二圖所示，顯示金屬銲墊上，因與含氟氣體產生反應 之表面缺陷放大圖，其中圖號2〇1<戈表金屬銲整，而圖號 202爲表面缺陷。、由於有部分氟原子殘留於聚醯亞胺光阻層 上’因此爲了不讓殘田之氟原子和金屬銲墊12之間因爲發 生反應’而於表面上產生缺陷影響後續之黏接能力，所以本 發明於蝕刻完成後會再加入一道製程手續 根據本發明之方法，即是將完成勉刻後之晶片置入戴 爐管中’進行殘留於聚酿亞胺光阻層上之氟原子驅離，並於 本紙張尺度適用中額家標準（CNS)A4規格（21G χ的7公餐] 529118 A7 B7 五、發明說明（）熱，私過％中通以氮氣，用以將離開聚醯爻胺光阻層表面 之氣原子帶離妖Μ菩Φ*，U $中’此時坡管溫度可設定在 °c，而於本最佳實施例中均.，生丨六 。 王°50 可爲1小時至6小時，端視製裎所：2: C ’此熱製程時間 是控制在1 · 5小時。 而’而於本最佳實施例中請參閲以下所列之比較表，二、於聚醯亞胺層20上所做之化學==較圖表是使用電子光譜 出，將完成蝕刻後之晶片t入熱二=分析，由表中可明顯看 小時之熱製程後，於表面所了壚管中，於250¾下進行！ 5夏哪到、— 的若未經過本發明之熱製程，而、 < 狀含量爲1 7.9%，相對 高達24.9 8%，因此本發明確於表面所量測到之氟含量將 效。 〜有降低表面含氟量之功 含氟量ΓίΤ^Ί 未經熱製程 ^^ 2 4.98 經熱製程 '^ 17.9 C請先閱讀背面之注意事項再填寫本頁) -裝----- ·!1111 拳 經濟部智慧財產局員工消費合作社印^^ 本發明以一較佳實施 者，在不脱離本發明之精神 如上，而熟悉此領域技 JsJ r)^> 飾，例如，依研磨率之需求詞敕j，▲可作些許更動或 其專利保護範圍更當視後附^ 施加研磨劑之時間間隔 而定。 申叫專利範圍及其等同領· 本紙張（度綱t關家標準（CNS)A4規格（210The first and the first C shown in the first one and the second one are formed on the metal pads on the upper layer of the defect .------------------- ^ ------ --- (Please read the precautions on the back before filling this page) 529118 1 2 Metal welding pads 16 Photoresist layer 20 1 Metal pad A7 B7 V. Description of the invention () Sectional diagram of the protective layer and polyimide layer The first picture is not an enlarged view of the surface defect of the metal pad and the reaction of fluorine; the drawing numbers are compared to 10 substrates 1 4 protective layer 18, 20 polyimide layer 202 surface defect invention detailed description: " " & quot " " — —-------- Without limiting the spirit and scope of the present invention, the following is an embodiment of the 'implementation of the invention'; those skilled in the art will understand After the spirit of the present invention, such a process can be applied to the manufacture of various polyimide layers. In order to reduce the lithography process steps, and after the protective layer process is performed with a fluorine-containing gas, the fluorine content adsorbed on the polyimide is reduced to reduce the residual fluorine in subsequent processes and the metal pads to avoid metal welding. Defects affect the subsequent bonding ability of metal pads, and the application of the present invention is not limited to the embodiments described below. In the illustration of the present invention, for the sake of clarity, the same material key layers are marked with the same reference numerals, and it must be noted that the proportions of the layers are not made according to the actual thickness. In addition, the following will describe the paper size applicable to the Chinese National Standard (CNS) A4 specification (210x 297 mm) ------------------- ^ —----- -(Please read the notes on the back before filling out this page) Printed by the Intellectual Property Bureau of the Ministry of Economic Affairs's Consumer Cooperatives 529118 Λ7 B7 V. Description of the invention () Since the process of the fan contains many well-known lithography And etching processes, so many steps will not be described in detail here. (Please read the precautions on the back before filling out this page.) Refer to Figure 1c 'This cross-sectional schematic diagram is the protective layer structure used in the preferred embodiment of the present invention. In this figure, a conventional technique is used to form a semiconductor structure on a substrate 10. The substrate 10 will include a semiconductor wafer, and active and passive components formed in the semiconductor wafer. Multiple metal interconnects (multUevennterconnects) are formed on the wafer, but for the sake of simplicity, only the substrate 10 will be shown. At the same time, the semiconductor structure also includes a metal pad 12, such as a metal wire. The main steps of forming the metal pad 12 include depositing a metal layer on the substrate 10 and defining the metal layer on the substrate. So as to form this metal pad 12, at this time, the entire integrated circuit architecture has been completely presented on the wafer, and then a protective layer i 4 (Passivation) for protecting these circuits and components is deposited on the wafer, which is made of ApcvD or pECVD. Method, and the materials used are usually Si3N4 or PSG. After the deposition is completed, a metal pad 12 printed by the consumer cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs is formed as a bonding pad, and is exposed by etching to carry out the packaging of the wafer. . In a preferred embodiment of the present invention, a polyimide material is used as a photoresist, and a polyimide photoresist layer 20 can be formed on the wafer by, for example, spin coating. Then, a patterned polyimide photoresist layer 20 is formed by exposure and development techniques, and the protective layer 14 is exposed. Then use this patterned polyamine photoresist layer. 20 This paper size applies the Chinese National Standard (CNS) A4 specification (210 X 297 mm) 529118 A7 B7 Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs --- ---------------- 1 --------- (Please read the precautions on the back before filling out this page) V. Description of the invention () is an etching mask ' The etching step of the protective layer 14 is performed, and the protective layer is etched (the etching gas may be a plasma containing fluorine, such as # C2f6, C3F8, A 戋 SF, etc., to provide a reaction gas containing fluorine atoms. The imine material has a low dielectric constant, good chemical and thermal stability, and insulation. Therefore, after exposure and development, the photoresist layer made of polyimide material remains in the protective layer 14 丨, In order to provide better protection for the wafer. However, since the polyfluorene imine 20 is exposed to fluorine-containing gas during the lithography process, after the completion of the etching, a part of the gas containing gas will be adsorbed on the polydonimine 20 On the surface, and the polyimide 20 is retained on the wafer after the touch is completed, without peeling off. Work, so the fluorine-containing gas adsorbed on the surface of polydonimide 20 will react with the metal pad 12 and cause defects on the surface of the metal pad 12, causing the bonding ability of the metal pad to decrease. The second figure shows an enlarged view of the surface defects on the metal pad due to the reaction with the fluorine-containing gas, in which the figure No. 201 < GeBao metal is welded and the figure No. 202 is the surface defect. Atoms remain on the polyimide photoresist layer 'so that in order not to cause a reaction between the residual fluorine atoms and the metal pad 12 to cause defects on the surface to affect subsequent adhesion capabilities, the present invention is used in etching After completion, a process procedure will be added. According to the method of the present invention, the wafer after completion of the etching process is placed in a wearing furnace tube, and the fluorine atoms remaining on the photoresist layer of the polyimide are driven away. Paper size applies CNS A4 specification (7 meals of 21G χ) 529118 A7 B7 V. Description of the invention () Nitrogen is passed in the heat and private area to leave the photoresist layer of polyamide Surface atomic bands are separated from the demon MH Φ * At this time, the temperature of the slope tube can be set at ° c, and in the best embodiment, the temperature is equal to six. Wang ° 50 can be from 1 hour to 6 hours, end-view system: 2: C 'The thermal process time is controlled at 1.5 hours.' In the preferred embodiment, please refer to the comparison table listed below. 2. The chemistry performed on the polyimide layer 20 == For comparison, the electronic spectrum is used. After the etching is completed, the wafer t is analyzed by thermal analysis. From the table, it can be clearly seen that after the hour's thermal process, it is placed in the tube on the surface at 250¾! If the content of --- has not undergone the thermal process of the present invention, and the content of the < form is 1 7.9%, which is relatively as high as 24.9 8%, the fluorine content measured on the surface of the present invention will be effective. ~ There is work to reduce the fluorine content on the surface. Fluoride content ΓίΤ ^ Ί Unheated process ^^ 2 4.98 Heated process' ^ 17.9 C Please read the precautions on the back before filling this page) -Packing ----- · ! 1111 Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs ^^ The present invention is implemented by a preferred implementer, without departing from the spirit of the present invention, and is familiar with the art of this field JsJ r) ^ > The demand word for rate 敕 j, ▲ can be changed slightly or its patent protection scope depends on the time interval at which the abrasive is applied. The scope of patent application and its equivalents · This paper (degrees and standards (CNS) A4 specification (210