1313149 九、發明說明： 【發明所屬之技術領域】 本發明係關於一種電路板模組，特別關於一種 積迴路的電路板模組。 、有集 【先前技術】 ^隨著電子技術的迅速發展，也帶動了電子產業 勃’如今’資訊、通訊或消費性電子產業已成為全壞蓮 中成長最快速的產業之_。而在電子技術的發展之^業 數的7〇件皆朝向模組化技術的方向發展關應輕夕 短、小以及節省成本的趨勢。 冷、 在-般的電子裝置中，早期的電路板大多由主動 ;(如一極體或電晶體)及被動元件(如電阻器或電容器 汉置於印刷電路板上所組成，藉由印刷電路板的金 將，子元件電氣連通’以達成所需要的各種功能。然而^ 隨著電子裝置所需的功能越來越強大，且 裝技術及模域技術奴的進步，⑽化的半導體元件= 淑漸廣泛地被利用於輕、薄、短、小化的電子產品中。 半導體製程係將電子元件或電子迴路設置於一石夕基 板上而形成所謂的積體電路（integrated circuit，1C)並在 利用例如環氧樹脂將其包覆後（即所謂的封裝技術），以形 成-晶>1封裝體（eWp)，進*可將其電性連接於—電路板 上，、形式例如為球格陣列封裝（baUgridarray，BGA)。 另外近來在液晶顯示面板中，尚有如玻璃覆晶技術（柳 1313149 on glass，COG)、晶片軟膜接合技術（chip on film, COF) 或低溫袓晶梦技術（low temperature poly silicon)等技術 以將部分的集積化驅動迴路接合於一以非晶矽薄膜電晶 體製成的晝素陣列電路板上。 簡而言之，玻璃覆晶封裝技術，係將一晶粒（die)或 一晶片封裝體（chip )藉由一凸塊（bump )而設置於一玻 璃基板上；而晶粒（die)軟膜接合技術則係將晶粒（die) - 設置於一軟性電路板上。一般來說，玻璃覆晶技術係較晶 粒軟膜接合技術為便宜，因此玻璃覆晶技術的使用較晶粒 軟膜接合技術多。然而，玻璃覆晶技術由於晶片中的矽基 板的熱膨脹係數與玻璃基板的熱膨脹係數不同，因此，其 - 所應用的電子裝置容易因為熱應力而受損。 _ - 爰因於此，如何提供一種能夠避免熱應力作用而影響 電子裝置之電路板模組，實屬當前重要課題之一。 ^ 【發明内容】 有鑑於上述‘課題，本發明之目的為提供一種能夠避免 因為熱應力作用而影響電子裴置之電路板模組。 緣是，為達上述目的，依據本發明之一種電路板模組 係包括一第一玻璃電路板及一第二玻璃電路板。第一玻璃 電路板係具有一第一玻璃基板、一第一集積迴路及一第一 電性連接墊，其中第一集積迴路與第一電性連接墊係設置 於第一玻螭基板上，且第一電性連接墊係與第一集積迴路 電性連接。第二玻璃電路板係具有一第二玻璃基板及一第 6 I3i3 149 〜電性連接墊，其中第二電性連接墊係設置於第二 故上’並與第-玻璃電路板之第-電性連接塾電性基 承上所述，因依據本發明之-種電路板模址，第 〜集積迴路設f於第—玻璃電路板上，再將第二破 板與第-玻璃電路板電性連接，如此—來，由於第 板與第二玻璃電路板係相同之材質，故其熱膨脹係數 係相同的’因而不會受到熱應力的影塑。 【實施方式】 以下將參照相關圖式，說明依據本發明較 電路板模組。 請參照圖1所示，依據本發明較佳實施例之電路板模 =係包括-第-玻璃電路板u以及—第二玻璃電路板 =於本實施射，電路板模組！係可為__太陽能電池之 電路板模組，或係為一平面顯示器之電路板模組，其中， ^如第-玻璃電路板η係為平面顯示器之H線驅動 =路板或-資料線麟電路板，而第二玻璃電路板η係 :平面顯示器之一畫素陣列電路板，當然，本發明之電路 板模組1亦可為其他期領域之電路 以限制其應用領域。 雷柯電路板11係具有—第—玻璃基板G、一第〆 pm .墊P〇1及一集積迴路IC1,其中，第一電性連接墊 i第一集積迴路IC1係設置於第一玻璃基板G〇i上， 集積迎路1C!係與第一電性連接^^ p仍電性連接。於 7 1313149 本實施例中，第一集積迴路iq係可包括一光電轉換迴 路、一控制迴路或一驅動迴路，且第一集積迴路係可以低 溫複晶石夕技術或非晶石夕技術而製成，也就說第一玻璃電路 板11係先在第一玻璃基板G01上利用低溫複晶矽技術或非 晶石夕技術先形成一石夕晶層，然後於石夕晶層上進行半導體製 程。1313149 IX. Description of the Invention: [Technical Field] The present invention relates to a circuit board module, and more particularly to a circuit board module of a circuit. [Settings] [Previous technology] ^ With the rapid development of electronic technology, it has also driven the electronics industry. Today, the information, communication or consumer electronics industry has become the fastest growing industry in the whole world. In the development of electronic technology, 7 parts of the industry are moving toward the direction of modular technology, which is related to the trend of short, small and cost-saving. In cold, in general electronic devices, early boards are mostly active; (such as a polar or transistor) and passive components (such as resistors or capacitors placed on a printed circuit board, by printed circuit boards) The gold will be electrically connected to the sub-components to achieve the various functions required. However, as the functions required for electronic devices become more powerful, and the technology and the technology domain slaves advance, (10) semiconductor components = 淑It is widely used in electronic products that are light, thin, short, and small. Semiconductor manufacturing systems use electronic components or electronic circuits on a single substrate to form a so-called integrated circuit (1C). For example, an epoxy resin coats it (so-called packaging technology) to form a crystal-on-package (eWp), which can be electrically connected to a circuit board, for example, a ball grid. Array package (baUgridarray, BGA). Recently, in the liquid crystal display panel, there are still glass flip chip technology (Liu 1313149 on glass, COG), chip on film (COF) or low temperature crystal technology. Low temperature poly silicon) and the like to bond part of the integrated driving circuit to a halogen array circuit board made of amorphous germanium thin film transistor. In short, the glass flip chip packaging technology is a crystal A die or a chip package is disposed on a glass substrate by a bump; and a die bonding technique is to place the die in a soft state. On the circuit board, in general, the glass flip chip technology is cheaper than the grain soft film bonding technology, so the use of the glass flip chip technology is more than the die bonding technology. However, the glass flip chip technology is due to the germanium substrate in the wafer. The coefficient of thermal expansion is different from the coefficient of thermal expansion of the glass substrate, and therefore, the electronic device to which it is applied is easily damaged by thermal stress. _ - 爰 - Because of this, how to provide a circuit board module capable of avoiding thermal stress and affecting the electronic device The group is one of the current important topics. ^ SUMMARY OF THE INVENTION In view of the above-mentioned subject, it is an object of the present invention to provide an ability to avoid affecting electricity due to thermal stress. The circuit board module according to the present invention includes a first glass circuit board and a second glass circuit board. The first glass circuit board has a first a glass substrate, a first accumulation circuit and a first electrical connection pad, wherein the first accumulation circuit and the first electrical connection pad are disposed on the first glass substrate, and the first electrical connection pad and the first The second glass circuit board has a second glass substrate and a sixth I3i3 149 - electrical connection pad, wherein the second electrical connection pad is disposed on the second side and is - The first-electrode connection of the glass circuit board is described above. According to the circuit board module address of the present invention, the first accumulation circuit is provided on the first glass circuit board, and the second broken board is The first glass circuit board is electrically connected to the first glass circuit board, so that the thermal expansion coefficient is the same as that of the second glass circuit board, so that it is not affected by thermal stress. [Embodiment] Hereinafter, a circuit board module according to the present invention will be described with reference to the related drawings. Referring to FIG. 1, a circuit board module according to a preferred embodiment of the present invention includes a --glass circuit board u and a second glass circuit board. It can be a circuit board module of __ solar battery, or a circuit board module of a flat display, wherein, for example, the first glass circuit board η is a H-line drive of a flat display = road board or - data line The lining circuit board and the second glass circuit board η series: a pixel array circuit board of a flat display. Of course, the circuit board module 1 of the present invention may also be a circuit of other fields to limit its application fields. The first circuit pad IC1 is disposed on the first glass substrate, and the first electrical circuit pad 1 is disposed on the first glass substrate. On G〇i, the 1C! system is still electrically connected to the first electrical connection. 7 1313149 In this embodiment, the first accumulation circuit iq may include a photoelectric conversion circuit, a control circuit or a driving circuit, and the first accumulation circuit may be made by low temperature polycrystalline ore technology or amorphous stone technology. In other words, the first glass circuit board 11 first forms a smectite layer on the first glass substrate G01 by using a low-temperature polysilicon technology or an amorphous cerium technique, and then performs a semiconductor process on the lithium layer.
第二玻璃電路板12係具有一第二玻璃基板G02及一第 二電性連接墊P02 ’其中第二電性連接墊p02係設置於第二 玻璃基板G〇2上，且第二電性連接墊p〇2係與第一玻璃電 路板11之第一電性連接墊電性連接。於本實施例中，第 二玻璃電路板12更可包括至少一主動式電子元件Etn或一 被動式電子元件E〇2,主動式電子元件丑以例如係為一電晶 體或一二極體，而被動式電子元件E02例如係為一電阻器 或一電容器。更甚者，第二玻璃電路板12更可包括一第 二集積迴路IC2，其係與該第二電性連接墊Ρ〇2電性連接’ 且第二集積迴路IC2與第一集積迴路1C!相同亦可以複晶 矽技術或非晶矽技術而製成，也就說第二玻璃電路板12 係先在第二玻璃基板G〇2上利用低溫複晶矽技術或非晶矽 技術先形成一砍晶層，然後再於梦晶層上進行半導體製 程。 於本實施例中，第一玻璃電路板11與第二玻璃電路 板12之接合方式係可為覆晶接合（如圖2A所示）、打線 接合（如圖2B所示）或係為膠合（圖未顯示），其中’第 一玻璃電路板11之第一電性連接墊P01與第二玻璃電路板 8The second glass circuit board 12 has a second glass substrate G02 and a second electrical connection pad P02 ′, wherein the second electrical connection pad p02 is disposed on the second glass substrate G 〇 2, and the second electrical connection The pad p〇2 is electrically connected to the first electrical connection pad of the first glass circuit board 11. In this embodiment, the second glass circuit board 12 may further include at least one active electronic component Etn or a passive electronic component E〇2, and the active electronic component is, for example, a transistor or a diode. The passive electronic component E02 is, for example, a resistor or a capacitor. Moreover, the second glass circuit board 12 further includes a second accumulation circuit IC2 electrically connected to the second electrical connection pad 2 and the second accumulation circuit IC2 and the first accumulation circuit 1C! The same can also be made by the polysilicon technology or the amorphous germanium technology, that is to say, the second glass circuit board 12 is first formed on the second glass substrate G〇2 by using a low temperature polysilicon technology or an amorphous germanium technique. The crystal layer is chopped, and then the semiconductor process is performed on the dream layer. In this embodiment, the first glass circuit board 11 and the second glass circuit board 12 can be joined by flip-chip bonding (as shown in FIG. 2A), wire bonding (as shown in FIG. 2B) or gluing (as shown in FIG. 2B). The figure is not shown), wherein the first electrical connection pad P01 and the second glass circuit board 8 of the first glass circuit board 11