TWI306782B - Suspension for showerhead in process chamber - Google Patents
Suspension for showerhead in process chamber Download PDFInfo
- Publication number
- TWI306782B TWI306782B TW095128932A TW95128932A TWI306782B TW I306782 B TWI306782 B TW I306782B TW 095128932 A TW095128932 A TW 095128932A TW 95128932 A TW95128932 A TW 95128932A TW I306782 B TWI306782 B TW I306782B
- Authority
- TW
- Taiwan
- Prior art keywords
- suspension
- wall
- sprinkler head
- gas
- periphery
- Prior art date
Links
- 239000000725 suspension Substances 0.000 title claims description 300
- 238000000034 method Methods 0.000 title claims description 153
- 230000008569 process Effects 0.000 title claims description 123
- 230000007246 mechanism Effects 0.000 claims description 105
- 238000012545 processing Methods 0.000 claims description 83
- 239000000463 material Substances 0.000 claims description 16
- 238000007789 sealing Methods 0.000 claims 5
- 238000005507 spraying Methods 0.000 claims 1
- 239000007789 gas Substances 0.000 description 145
- 230000035882 stress Effects 0.000 description 29
- 229910052782 aluminium Inorganic materials 0.000 description 16
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 16
- 238000001816 cooling Methods 0.000 description 16
- 238000005452 bending Methods 0.000 description 13
- 230000002093 peripheral effect Effects 0.000 description 10
- 239000000758 substrate Substances 0.000 description 9
- 230000008602 contraction Effects 0.000 description 8
- 239000004065 semiconductor Substances 0.000 description 6
- 238000005520 cutting process Methods 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- 230000004044 response Effects 0.000 description 5
- 239000007921 spray Substances 0.000 description 5
- 238000013461 design Methods 0.000 description 4
- 230000035939 shock Effects 0.000 description 4
- 230000008646 thermal stress Effects 0.000 description 4
- 238000012546 transfer Methods 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- 238000002230 thermal chemical vapour deposition Methods 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 239000003153 chemical reaction reagent Substances 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000000112 cooling gas Substances 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000004049 embossing Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000011888 foil Substances 0.000 description 1
- 239000008266 hair spray Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000003014 reinforcing effect Effects 0.000 description 1
- 230000006903 response to temperature Effects 0.000 description 1
- 238000004513 sizing Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 230000002269 spontaneous effect Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 238000005019 vapor deposition process Methods 0.000 description 1
- 230000003313 weakening effect Effects 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45565—Shower nozzles
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45587—Mechanical means for changing the gas flow
- C23C16/45591—Fixed means, e.g. wings, baffles
Landscapes
- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
- Drying Of Semiconductors (AREA)
- Fire-Extinguishing By Fire Departments, And Fire-Extinguishing Equipment And Control Thereof (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US71387505P | 2005-09-02 | 2005-09-02 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200709854A TW200709854A (en) | 2007-03-16 |
| TWI306782B true TWI306782B (en) | 2009-03-01 |
Family
ID=37816905
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW095128932A TWI306782B (en) | 2005-09-02 | 2006-08-07 | Suspension for showerhead in process chamber |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JP5489390B2 (enrdf_load_stackoverflow) |
| KR (1) | KR101354575B1 (enrdf_load_stackoverflow) |
| CN (1) | CN1924085B (enrdf_load_stackoverflow) |
| TW (1) | TWI306782B (enrdf_load_stackoverflow) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI766219B (zh) * | 2019-01-07 | 2022-06-01 | 日商愛發科股份有限公司 | 真空處理裝置及真空處理裝置之清潔方法 |
Families Citing this family (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101139215B1 (ko) * | 2009-10-27 | 2012-05-14 | 주식회사 테스 | 기판 처리 장치 |
| WO2011146571A2 (en) * | 2010-05-21 | 2011-11-24 | Applied Materials, Inc. | Tightly-fitted ceramic insulator on large-area electrode |
| US8721791B2 (en) | 2010-07-28 | 2014-05-13 | Applied Materials, Inc. | Showerhead support structure for improved gas flow |
| CN103403843B (zh) | 2011-03-04 | 2016-12-14 | 诺发系统公司 | 混合型陶瓷喷淋头 |
| DE102015118765A1 (de) * | 2014-11-20 | 2016-06-09 | Aixtron Se | Vorrichtung zum Beschichten eines großflächigen Substrats |
| DE102015110440A1 (de) * | 2014-11-20 | 2016-05-25 | Aixtron Se | CVD- oder PVD-Reaktor zum Beschichten großflächiger Substrate |
| KR101590346B1 (ko) * | 2015-01-30 | 2016-02-01 | 주식회사 테스 | 박막증착장치 |
| JP6242933B2 (ja) | 2016-03-31 | 2017-12-06 | 株式会社日立国際電気 | 基板処理装置、半導体装置の製造方法およびプログラム |
| US20220064799A1 (en) * | 2019-01-07 | 2022-03-03 | Ulvac, Inc. | Vacuum processing apparatus |
| KR102700366B1 (ko) * | 2019-01-29 | 2024-08-30 | 주성엔지니어링(주) | 샤워헤드 및 이를 포함하는 기판처리장치 |
| KR102618455B1 (ko) * | 2019-12-02 | 2023-12-27 | 주식회사 원익아이피에스 | 샤워헤드조립체 및 이를 포함하는 기판처리장치 |
| US12011731B2 (en) * | 2020-07-10 | 2024-06-18 | Applied Materials, Inc. | Faceplate tensioning method and apparatus to prevent droop |
| KR102828735B1 (ko) | 2023-04-27 | 2025-07-03 | (주)티티에스 | 샤워헤드 코너 영역의 공정가스 흐름 개선 장치 |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5670218A (en) * | 1995-10-04 | 1997-09-23 | Hyundai Electronics Industries Co., Ltd. | Method for forming ferroelectric thin film and apparatus therefor |
| JP3480271B2 (ja) * | 1997-10-07 | 2003-12-15 | 東京エレクトロン株式会社 | 熱処理装置のシャワーヘッド構造 |
| US6300255B1 (en) * | 1999-02-24 | 2001-10-09 | Applied Materials, Inc. | Method and apparatus for processing semiconductive wafers |
| US6461435B1 (en) * | 2000-06-22 | 2002-10-08 | Applied Materials, Inc. | Showerhead with reduced contact area |
| US7131218B2 (en) * | 2004-02-23 | 2006-11-07 | Nike, Inc. | Fluid-filled bladder incorporating a foam tensile member |
| JP4698251B2 (ja) * | 2004-02-24 | 2011-06-08 | アプライド マテリアルズ インコーポレイテッド | 可動又は柔軟なシャワーヘッド取り付け |
-
2006
- 2006-08-07 TW TW095128932A patent/TWI306782B/zh active
- 2006-08-31 KR KR1020060083734A patent/KR101354575B1/ko active Active
- 2006-09-01 CN CN2006101267890A patent/CN1924085B/zh active Active
- 2006-09-04 JP JP2006239266A patent/JP5489390B2/ja active Active
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI766219B (zh) * | 2019-01-07 | 2022-06-01 | 日商愛發科股份有限公司 | 真空處理裝置及真空處理裝置之清潔方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| KR101354575B1 (ko) | 2014-01-22 |
| CN1924085A (zh) | 2007-03-07 |
| JP5489390B2 (ja) | 2014-05-14 |
| TW200709854A (en) | 2007-03-16 |
| KR20070026210A (ko) | 2007-03-08 |
| JP2007123840A (ja) | 2007-05-17 |
| CN1924085B (zh) | 2013-10-23 |
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