TWI304994B - - Google Patents

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TWI304994B
TWI304994B TW94116251A TW94116251A TWI304994B TW I304994 B TWI304994 B TW I304994B TW 94116251 A TW94116251 A TW 94116251A TW 94116251 A TW94116251 A TW 94116251A TW I304994 B TWI304994 B TW I304994B
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Taiwan
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layer
film
source
solution
electron
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TW94116251A
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TW200641954A (en
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kui-wen Zheng
Yu-An Li
jun-yan Xiao
jin-long Cai
xie-heng Li
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Teco Elec & Machinery Co Ltd
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Description

13049941304994

【發明所屬之技術領域】 本發明係有關一種電子 一種利用喷塗技術將溶液均 素内,以形成貼覆層,再於 利用剝膜設備移除膠臈時,' 質之強度在脫膜過程中讓貼 來可應用於大尺寸面板,而 廣。 發射源表面活化的方法,尤指 勻噴塗灌注於陰極結構之各傳_ 貼覆層表面貼覆有一層膠膜, 一併移除貼覆層,由於勝膜材 覆層不致破損或斷裂,對於將 且對使用貼覆層之材料適性更 【先前技術】 “ Ϊ知之三極場發射顯示器’其結構主要係包含陽極結 構/、陰極結構,陽極結構與陰極結構之間設置有支撐器 pacer),提供為陽極結構與陰極結構間真空區域之間隔, ^ =為陽極結構與陰極結構間之支撐,該陽極結構係包含 一陽極基板、一陽極導電層及一螢光粉體層(ph〇sph〇rs丄 吖^);而該陰極結構則包含一陰極基板、一陰極導電層 、了,子發射源層、一介電層及一閘極層;其中該閘極層 ,被提供一電位差以汲引電子發射源層之電子射出,藉由 陽極導電層所提供之高電壓,以提供電子束之加速,俾使 •電子有足夠的動能撞擊(impinge)陽極結構上之螢光粉體 層激發而使其發光。據此,為了使電子在場發射顯示器中 移動,需以真空設備將顯示器保持至少1〇_5托^”。以下 之真空度’使電子獲得一良好的平均自由動徑(mean free Path) ’同時應避免電子發射源和螢光粉區的污染及毒化 。另’為使電子有足夠能量去撞擊螢光粉,故在兩板間需[Technical Field] The present invention relates to an electronic method in which a solution is homogenized by a spraying technique to form a coating layer, and when the film is removed by a film stripping device, the strength of the material is in the film removing process. The middle can be applied to large-sized panels, and wide. A method for activating the surface of an emissive source, in particular, a surface of each of the transfer layers of the cathode structure is coated with a film of adhesive, and the coating layer is removed, since the coating of the winning film is not damaged or broken, Will be more suitable for the material using the overlay layer [Prior Art] "The three-pole field emission display of the known structure" mainly includes an anode structure / a cathode structure, and a support pacer is disposed between the anode structure and the cathode structure, Provided as a gap between the anode structure and the vacuum region between the cathode structures, ^ = a support between the anode structure and the cathode structure, the anode structure comprising an anode substrate, an anode conductive layer and a phosphor powder layer (ph〇sph〇) Rs丄吖^); the cathode structure comprises a cathode substrate, a cathode conductive layer, a sub-emitter layer, a dielectric layer and a gate layer; wherein the gate layer is provided with a potential difference to induce The electron emission from the electron emission source layer is provided by the high voltage supplied from the anode conductive layer to provide acceleration of the electron beam, and the electron has sufficient kinetic energy to impinge the phosphor powder on the anode structure. Layer is excited to emit light. Thus, in order to move electrons in a field emission display, the need to monitor the vacuum apparatus holding at least 1〇_5 ^ Torr. " The following degree of vacuum 'allows electrons to obtain a good mean free path' while avoiding contamination and poisoning of the electron-emitting source and the phosphor powder region. In order to make the electrons have enough energy to hit the fluorescent powder, it is required between the two boards.

1304994 五、發明說明(2) :適當間隙,使電子有足夠的加速空間來撞擊 達到使螢光粉體能充分產生發光效應。 粉體, 其中所谓的電子發射源層係以奈米碳管為主八 於不米碳管(Carbon nanotubes)自1991年被nji二山由 (Nature 354,56 ( 1 991 ))具備極高的電子特性,並&出後 被多種電子元件内所使用’❿奈米碳管可以有 已 ^aspect ratio)大於500以上,和高的剛性其揚问的長寬 多在lOOOGPn以上,而奈米碳管之尖端或缺用數 級規模的“…這些特性因&被認:為原子 丨子發射源(electronfieldemitter)材料,例如;^電 射顯示器之陰極結構上之電子發射源之利用。由J野發 :具備以上所示之物理特性,因此也可被設計為多=碳 如,網印或薄膜製程等以圖騰化於電子元件使用。種版裎 然就其中所謂的陰極結構製作技藝, 為電子發源材料實施製作於陰極導電;t杈官作 ,學真空沉積则…一種可以以感其光 管溶液圖騰化製作於各該像素内之陰極導電層上,不未奴 噴圖奈米碳管溶液搭配網罩製作,或是一種電泳太; 碳管•塗佈沉積於陰極導電層±,然不論各該做法,均^ 圖樣製作後予以5 00 t以上之高溫燒結,俾使於各該製程、 後殘留之溶劑移除,並可使奈米碳管固著於陰極層上 ,以增加其附著力。 不過陰極結構製程並未於此完成,通常於高溫燒結製 程後仍需進行一所謂的表面活化製成,由於高溫燒結仍不1304994 V. INSTRUCTIONS (2): Appropriate gaps allow the electrons to have sufficient acceleration space to strike so that the phosphor powder can sufficiently produce a luminescent effect. Powder, the so-called electron emission source layer is mainly composed of carbon nanotubes. Since 1991, it has been extremely high by Nji Ershan (Nature 354, 56 (1 991 )). Electronic characteristics, and & used after being used in a variety of electronic components, '❿n carbon nanotubes can have a ratio of more than 500, more than 500, and high rigidity, the length and width of the length of the question is more than lOOOOGPn, and nano The tip of a carbon tube or the lack of a multi-scale "...these characteristics are recognized as: an atomic electron source (electronfield emitter) material, for example; ^ the use of an electron emission source on the cathode structure of an electro-radiation display. J Wild Hair: With the physical characteristics shown above, it can also be designed to use more than carbon, such as screen printing or film processing, to be used in electronic components. The seed version is the so-called cathode structure manufacturing technology. For the electron source material to be fabricated in the cathode conduction; t杈 official work, learning vacuum deposition... a kind of cathode conductive layer that can be made into the pixels in the inductive solution of the light pipe solution, without the slave spray Tube solution with mesh cover Or a kind of electrophoresis too; carbon tube • coating deposited on the cathode conductive layer ±, regardless of the method, the pattern is prepared and then sintered at a high temperature of more than 500 t, so that the solvent remaining in the process and after the process In addition, the carbon nanotubes can be fixed on the cathode layer to increase the adhesion. However, the cathode structure process is not completed here, and usually a so-called surface activation process is required after the high-temperature sintering process, High temperature sintering is still not

1304994 '五、發明說明(3) 足Γ Γ除電子發射源表面其他非奈米碳管之碳質塊材結構 〆,、他不良晶型之奈米碳管,或其他碳球結構等,戈直 $ =溫燒結所形成之高溫有機材料,以上素材仍影響: ^ e電子發射源之電子產出效率,因此仍需經上述所謂 井蕾=ί i匕程序而加以移除或&質以達活化電子發射源提 產生之效果,該等活化技術可以有; 率之公告第48053 7號之「奈米礙管發射源場發射效 ,^曰,方法」發明專利案,此專利案在貼膜後剝膜處理 丨@β 一種膠帶貼覆於電子發射源表面,再將該膠帶剝 以移除前述所謂之多於材料或結構以達活化之目的⑴ ::、s 3 t發展之雷射或電漿之熱處s,係利用瞬間區域 嘴:良結構之碳材再結晶或是分解移除;或是, 。缺以二! 理力量將不良之材料及結構加以破壞以移除 雖之方法仍各有其缺點,如以膠帶剝膜之方式, 極結構内:因=ΐ =於電子發射源已製作於三極之陰 大型:板結構,且實施方式成本過 利於高解拚夕^主式,可斯*會傷害到原碳管結構,且不 丨於同解析之像素陰極結構之實施。 之「夺f 3 ::技藝’如台灣專利案證書號第1 223308號 係利源場發射電流增益製程」發明專利案’ 構之各該像素内之雷子絡射.语^ j用熱鑄型以灌注二極結 除,以達活& f 2電子發射源表面,成形後再將該熔膠剝 達/舌化電子發射源表面的目的,該製程雖過程簡易1304994 'V. Description of invention (3) Γ Γ Γ Γ 电子 电子 电子 电子 电子 电子 电子 电子 电子 电子 电子 电子 电子 电子 电子 电子 电子 电子 电子 电子 电子 电子 电子 电子 电子 电子 电子 电子 电子 电子 电子 电子 电子 电子 电子 电子 电子 电子 电子 电子 电子 电子 电子 电子Straight $ = high temperature organic material formed by warm sintering, the above materials still affect: ^ e electron emission source electronic output efficiency, so it still needs to be removed by the above-mentioned so-called well ray = ί 匕 program or The effect of the activation of the electron-emitting source can be achieved. The activation technology can be used. The publication of the invention is based on the invention of the invention of the invention. Post-stripping treatment 丨@β A tape is applied to the surface of the electron-emitting source, and the tape is stripped to remove the aforementioned so-called more than material or structure for activation purposes (1)::, s 3 t development of laser or The heat of the plasma is based on the instantaneous region of the mouth: the carbon structure of the good structure is recrystallized or decomposed and removed; or, . Lack of two! The power to destroy the bad materials and structures to remove the methods still have their own shortcomings, such as tape stripping, inside the polar structure: because = ΐ = the electron emission source has been made in three Extremely large yin: plate structure, and the cost of the implementation is too high for the high solution, the main type, the sth* will damage the original carbon tube structure, and is not inconsistent with the implementation of the pixel cathode structure. "Capture f 3 :: Skills", such as Taiwan Patent Case No. 1 223308, the source of the source field gain process, the invention patent case's structure of each of the pixels in the pixel. The type is filled with a bipolar junction to achieve the purpose of the surface of the active & f 2 electron emission source, which is then stripped/toned to the surface of the electron emission source after forming, and the process is simple

1304994 五、發明說明(4) 且成本低廉,然 其中一重大限制 熱熔過程黏度仍 若為高解析產品 即便加熱鑄熔, 像素孔隙間形成 米碳管電子發射 限制將致使電子 效果大打折扣。 另外,申請 專利案,係改以 入電子發射源結 結構之陰極電極 以達活化電子發 料型成貼覆層之 量產機制,然對 於所貼覆之材料 ’若進依賴該所 生斷裂或破損, 供一脫膜機制, 之脫膜以達均句 【發明内容] 本發明之主 覆層表面再貼霜 之申請號 成膜方式 熱熔膠或 的貼覆層 以前述之 易且成本 層之脫膜 對於該脫 強度,於 大尺寸面 膜機置以 以該技術係以熱熔塗料灌注,仍有限制, 實施的因素係唯一種高黏度材料,即便於 為1 000_以上,由於場發射顯示器元件 於寬更小’以該等高黏度炫膠 :塗蓋過程,往往部分區域之溶谬盘 工氣間隙,I亥等空氣間隙將影響溶膠愈夺 ;之密和,據此將難達全面活化表面,、此 發射源表面活化區域無法均勻,顯示畫面 人先前所申請 利用一種喷塗 構’該等利用 表面形成所謂 射源之效果。 製程雖過程簡 所形成之貼覆 限制,若直接 形成之貼覆層 f其對於未來 可量產性之脫 活化效果。 第94105204 以利於貼覆 高分子材料 再以脫除該 熱熔膠或高 低廉,係可 機制仍不明 膜層材料進 脫膦過程將 板之需求, 供大尺寸面 號發明 材料深 於三極 貼覆層 分子材 應用於 確,由 行脫膜 可能發 更須提 板陰極 要 目 一曰的’在於解決上述缺失,本發明於貼 膠骐’在脫膜過程中,由於膠膜材質之1304994 V. Inventive Note (4) and low cost, one of which is a major limitation. The viscosity of the hot melt process is still a high-resolution product. Even if it is heated and cast, the electron emission limitation of the carbon nanotubes formed between the pixel pores will greatly reduce the electronic effect. In addition, the patent application is changed to the cathode electrode of the electron emission source junction structure to achieve the mass production mechanism of the activated electron emission type coating layer, but the material to be coated is dependent on the fracture or Breaking, for a stripping mechanism, stripping to reach a uniform sentence [Summary of the invention] The main coating surface of the present invention is affixed to the application of the film forming method, the hot melt adhesive or the covering layer is easy and cost-effective. For the de-strength, in the large-size mask machine, there is still a limit to the technique of injecting the hot-melt paint. The factor of implementation is the only high-viscosity material, even if it is above 1000 Å, due to field emission. The display components are wider and smaller 'with these high-viscosity viscers: the coating process, often the part of the region is dissolved in the working space gap, I Hai and other air gaps will affect the sol more than the entanglement; the dense and, according to this will be difficult Fully activating the surface, the surface activation area of the source is not uniform, and the display has previously applied for a coating structure to form a so-called source. Although the process is limited by the process, the directly formed coating layer f is deactivated for future mass production. No. 94105204 to facilitate the application of the polymer material to remove the hot melt adhesive or to be high and low, the mechanism is still unclear, the film material is required to enter the dephosphorization process, and the material for the large size surface is deeper than the three-pole sticker. The coating molecular material is applied to the fact that it is necessary to remove the film from the film, and it is necessary to solve the above-mentioned defects. The present invention is in the process of removing the film, because of the material of the film.

第9頁 1304994Page 9 1304994

讓貼覆 ’而且 或斷裂,對於將 層之材料適性更 -五、發明說明(5). 強度可以於脫膜過程中 來可應用於大尺寸面板 廣。 為達上述之目的, 法’在陰極結構製作完 技術此噴塗技術將溶液 ’此時溶液將覆蓋閘極 於電子發射源表面上, 膜後,將至少一側具有 利用滾筒式脫膜裝置進 ’一併移除貼覆層,以 有機氧化物等,以達活 【實施方式】 茲有關本發明之技 明如下: 請參閱「第一圖所 。如圖所示:本發明之 以噴塗溶液於陰極結構 膜之方式,再將該貼覆 面之效果。 利用所謂喷塗方式 極結構之各該像素内, 灌注所造成均勻性不佳 燥成膜,再貼覆一層膠 本發明 成,並 均勻噴 電極層 以形成 黏膠之 行脫膜 移除電 化電子 層不致破損 對使用貼覆 之電子發射 利用高溫燒 塗灌注於陰 ’並由穿孔 一噴塗貼覆 膠膜貼覆於 處理,在滾 子發射源表 發射源表面 源表面 結後, 極結構 及凹陷 層,再 貼覆層 筒將膠 面之殘 之效果 活化的方 利用噴塗 之表面上 區域滲入 使其乾燥 表面上, 膜剝除時 餘碳材或 術内容及詳細說明 ,現配合圖式 說 示」, 電子發 之電子 之膜剝 可完全 以克服 的現象 模,再 係本發明之 射源表面活 發射源表面 除以完成活 將貼覆溶液 傳統熱炫鑄 ’之後再利 進行剝膜處 陰極結構示意圖 化方法,主要是 上以形成一貼覆 化電子發射源表 灌注於三極的险 形技藝無法完全 用灌注後溶液乾 理,以移除電子Let the coating 'and or break, the materiality of the layer is more appropriate - five, the invention description (5). The strength can be applied to the large-size panel in the stripping process. In order to achieve the above purpose, the method of 'forming the cathode structure technology, the spraying technique will apply the solution', the solution will cover the gate on the surface of the electron emission source, and after the film, at least one side will have the use of the drum type stripping device. The adhesive layer is removed together with an organic oxide or the like to achieve the following. [Embodiment] The technical scope of the present invention is as follows: Please refer to "the first figure. As shown in the figure: the spray solution is used in the present invention. The effect of the surface of the cathode structure film, and the effect of the surface of the coating layer. In each of the pixels of the so-called spray pattern pole structure, the uniformity caused by the infusion is poor, and the film is formed, and the layer is coated with the glue. The electrode layer is stripped to form an adhesive layer to remove the electrochemical electron layer without damage. The electron emission using the coating is poured into the cathode by high temperature firing and is applied by a perforation spray coating film, and is sprayed on the roller. After the surface of the source surface of the source surface is junctioned, the pole structure and the recessed layer are re-applied to the surface of the surface of the surface of the sprayed surface to be dried. On the surface, when the film is stripped, the residual carbon material or the content and detailed description are now in conjunction with the schematic diagram. The film peeling of the electron can be completely overcome by the phenomenon of the film, and then the surface emission of the source of the present invention is activated. The source surface is divided by the conventional hot-casting of the coating solution, and then the cathode structure is schematically patterned. The main method is to form a coated electron emission source and inject the three-pole into the three-pole. Completely use the solution after perfusion to remove electrons

第10頁 1304994 五、發明說明(6) = 氧化物等,配合此剝膜機制 喷塗方式覆膜構上活化的限制,以 以提高剝膜均勻性。 搭配以滾筒式剝膜機制可 陰極結構1 〇,係作。,此 =用:膠於前述基板,上形 2上形成有一介電層(Di electric) 3 ,於前 電和曰 二=有-閘極電極層4,可以利;或敍層: =之開極電極層4上形成有一穿孔(hole);]方:及; 層:之凹陷區域6 ’再利用奈米碳 丄 形成有一電子發射源7。 從層J上 請參閱「第〕、三圖所示」,係本發明之 構ί:Ϊ作流程及完成示意圖。”所示:當:述;L ? = 並利用高溫燒結後,再進行電-Si /在進行電子發射源7表面活化製作,乃是利 •術此噴塗技術包括有一具有噴塗裝置2 〇 ,此嘴、置 〇内部填充有溶液8 ,該喷塗裝置2 〇利用高壓空 以喷塗的溶液8均勻噴塗灌注於陰極結構i 〇之表面上, 此時溶液將覆蓋問極電極層4,並由穿孔(h〇le) 5及凹 陷區域6滲入於電子發射源7表面上,以形成一噴塗貼覆 層9 (如第三圖所示)’再使其乾燥膜後。 、Page 10 1304994 V. INSTRUCTIONS (6) = Oxide, etc., in conjunction with this stripping mechanism Spray coating is used to limit the activation of the membrane to improve the uniformity of stripping. With the drum type stripping mechanism, the cathode structure can be used as a cathode structure. , this = use: glue on the substrate, the upper shape 2 is formed with a dielectric layer (Di electric) 3, before the front and the second = with - gate electrode layer 4, can be profitable; or layer: = open A hole is formed in the electrode layer 4; a square: and a layer: a recessed region 6' is formed by reusing nanocarbon germanium to form an electron emission source 7. From the layer J, please refer to the "sections" and "three figures", which is the structure of the present invention: the process and the completion diagram. "When: said: L? = and after sintering at a high temperature, then electro-Si / in the surface activation of the electron-emitting source 7 is produced. This technique includes a spraying device 2 〇 The nozzle and the inside of the bowl are filled with a solution 8 , and the spraying device 2 is uniformly sprayed on the surface of the cathode structure i 〇 by spraying the solution 8 with high pressure, and the solution will cover the electrode layer 4, and The perforation (h〇le) 5 and the recessed region 6 are infiltrated into the surface of the electron emission source 7 to form a spray coating layer 9 (as shown in the third figure), and then dried.

第11頁 1304994 , _ 五、發明說明(7) 上述之喷塗技術據此可實施方法—, 喷式可剝保護膜,習知用途係應用於嵐可以選購市售之 該所謂的喷式可剝膜為一種高分子材料表面之保護膜。 灌内,習知用途係用於五金加工業之金属填充於高壓氣體 濩膜,藉由高壓氣體之將高分子溶液 ^面之抗氧化保 覆於被噴塗表面,利用喷塗後溶液拮^化為小液珠塗 燥成膜,以形成一保護膜。藉此 =溶劑揮發後乾 溶液喷塗於陰極結構i 〇,可以=重矛:此市售之噴塗 .铸形,•置後待覆膜液揮充分填充 〜不r生冷液,常溫黏度控制在1〇〇 ::^後黏度可控制在5〇〇CPS以下。再利用-種塗二、 之=空氣之壓送方式將塗料霧化喷塗於陰極結 之固人吾T發射源7表面上,配合使用塗佈溶液及懸浮 固/量比例,選用之塗裝喷搶空氣進氣流量至少大於2〇 沴p^n由於使用之喷塗溶液8係一種水性溶液’被喷 疒# *極、Ό構1〇需被預熱,俾使陰極結構1〇以5 〇 ~8 〇 膜、吾烤1 0〜20分鐘’以利於塗佈之溶液8易於立即乾燥成 .^丄由於係以—噴塗程序因此可重複噴塗,可確保霧化塗 为轉形於電子發射源7表面。 三’、上述之溶液乾燥成膜後,利用滾筒式脫膜裝置3 先進膜處理(如第四圖所示),在進行脫膜處理前, 3仃膠膜1 0 1之貼覆,利用滾筒3 0 3將膠膜1 Ο 1 貝於貼覆層9的表面上,再經滾筒3〇1滾壓,因滾筒Page 11 1304994, _ V. Invention Description (7) The above-mentioned spraying technology can be implemented according to this method, the spray-peelable protective film, and the conventional use is applied to the so-called spray type commercially available. The peelable film is a protective film on the surface of a polymer material. In the irrigation, the metal used in the hardware processing industry is filled with a high-pressure gas ruthenium film, and the anti-oxidation of the polymer solution is coated on the surface to be sprayed by the high-pressure gas, and the solution is pulverized by spraying. A small liquid bead is coated to form a protective film. By this, the solvent is evaporated and the dry solution is sprayed on the cathode structure i 〇, which can be = heavy spear: this commercially available spray. Cast shape, • After the film is filled, the liquid is fully filled ~ not r cold liquid, the temperature viscosity is controlled at The viscosity after 1〇〇::^ can be controlled below 5〇〇CPS. Re-use - coating 2, = air pressure feeding method spray spray coating on the surface of the cathode junction of the solid-state T source 7, combined with the use of coating solution and suspension solid / amount ratio, selected coating The air intake flow rate of the jet is at least greater than 2〇沴p^n. Because the spray solution used is an aqueous solution, it is squirted. 〇~8 〇 film, I bake for 10~20 minutes' to facilitate the coating solution 8 to be easily dried immediately. ^ 丄 Due to the spray-coating procedure, it can be repeatedly sprayed to ensure that the atomized coating is transformed into electron emission. Source 7 surface. After the above solution is dried and formed into a film, the film is removed by the advanced film treatment of the drum type stripping device 3 (as shown in the fourth figure), and the 3 仃 film is attached to the film before the stripping treatment, and the roller is used. 3 0 3 The film 1 Ο 1 is on the surface of the coating layer 9, and then rolled by the roller 3〇1, due to the roller

1304994 圖式簡單說明 【圖式簡單說明】 第一圖,係本發明之陰極結構示意圖。 第二圖,係本發明之陰極結構喷塗溶液製作流程示意圖。 第三圖,係本發明之陰極結構喷塗溶液製作流程完成示意 圖。 第四圖,係本發明之陰極結構表面膠膜及貼覆層進行剝除 處理示意圖。 【主要元件符號說明】 陰極結構.............10 基板................1 電極層...............2 介電層...............3 閘極電極..............4 穿孔................5 凹陷區域..............6 電子發射源.............7 溶液................8 貼覆層...............9 膠膜..............101 喷塗裝置.............20 滾筒式脫膜裝置..........30 滾筒......301、302、3031304994 Brief description of the drawings [Simplified description of the drawings] The first figure is a schematic diagram of the cathode structure of the present invention. The second figure is a schematic diagram of the production process of the cathode structure spraying solution of the present invention. The third figure is a schematic diagram of the preparation process of the cathode structure spraying solution of the present invention. The fourth figure is a schematic diagram of the stripping process of the surface adhesive film and the coating layer of the cathode structure of the present invention. [Description of main component symbols] Cathode structure.............10 Substrate................1 Electrode layer........ .......2 Dielectric layer..................3 Gate electrode..............4 Perforation... ............5 recessed area..............6 electron emission source..................7 solution.. ..............8 贴层...............9 film.............. 101 Spraying device..................20 Roller type stripping device..........30 Roller...301, 302, 303

第14頁Page 14

Claims (1)

1304994 •六、申請專利範圍 a b 以形成一貼 一種電子發射源表面活化的方法 後之陰極結構; 裝置將溶液喷塗於 包括有: 先取一燒結 利用一喷塗 上述陰極結構 c )、 於貼覆層表 構表面之膠 移除陰極結 2、 如 化的方法, 結構至少包 此電極層上 閘極電極層 暴露電極層 有一電子發 3、 如 化的方法, 之任一種。 4、 如 化的方法, 固含量比例 1/miη 。 5、 如 化的方法, 覆層; 待,上述陰 面貼覆一層 膜脫模,在 構電子發射 申請專利範 其中,該陰 括有一基板 形成有一介 ’於前述之 之凹陷區域 射源。 +請專利範 其中,該噴 中請專利範 其中,該喷 ’選用之塗 中請專利範 其中’該溶 極結構上 膠膜,再 膠膜脫模 源表面之 圍第1項 極結構為 ,於則述 電層,於 閘極電極 ,再利用 所形成之 利用一脫 時 貼覆層 脫膜裝置 併移除貼 或有機 子發射 殘餘碳材 所述之電 一三極場發射顯 基板上形成有一 前述之介電層上 層上形成有一穿 奈米碳管於電極 圍第1項所述之電 塗裝置為一高壓空 圍第3項所述之電 搶為了配合使用塗 裝喷搶空氣進氣流 圍第1項所述之電 液可調製PVA或PVP 子發射 氣填充 子發射 佈溶液 量至少 乾燥後, 將陰極結 覆層,以 氧化物。 源表面活 示器,其 電極層, 形成有一 孔,以及 層上形成 源表面活 灌或噴搶 源表面活 及懸浮之 大於200 子發射源表面活 之任一種溶液。1304994 • Sixth, the patent scope ab is formed to form a cathode structure after the surface activation method of the electron emission source; the device sprays the solution to include: first taking a sintering, spraying the cathode structure c), and coating The surface of the layer surface is removed by a glue to remove the cathode junction 2. The method includes at least one of the methods of forming the electron electrode 3 and the exposed electrode layer on the electrode layer of the electrode layer. 4. For example, the solid content ratio is 1/miη. 5. A method of coating, a coating; wherein, the above-mentioned negative surface is coated with a film, and in the electron-emitting application patent, the substrate includes a substrate formed with a recessed region in the foregoing. + Please patent the patent, in the spray, please patent the vane, the spray 'selected coating, please patent the 'the dissolved pole structure on the film, and then the film is removed from the source surface of the first pole structure, The electric layer is formed on the gate electrode, and the formed electrode is formed on the electro-triode field emission substrate by using a stripping layer stripping device and removing the paste or organic post-emitting residual carbon material. An electric coating device according to the first item of the electrode layer is formed on the upper layer of the dielectric layer, and the electrocoating device described in item 1 is a high-pressure air-filled item. The electro-hydraulic solution described in item 1 of the gas flow can modulate the amount of the PVA or PVP sub-emissive gas filler. The amount of the solution is at least dried, and the cathode is coated with an oxide. The source surface active device has an electrode layer formed with a hole, and any solution on the layer which forms a source surface or a surface active or suspended surface of more than 200 sub-sources. 1304994 ---------- --- 力' 中請專概圍 " ' ft 化、、如申凊專利範圍第5項戶斤述之電子發射源表面活 的方法’其中,該溶液之溶度為5 % ~ 1 〇 %之水性溶液。 7 如申请專利範圍第5項所述之電子發射源表面活 4匕的方、、,好 j_ * 其中,該溶液之常溫黏度控制在lOOOcps以下 〇 ^ 、8、如申请專利範圍第5項所述之電子發射源表面活 b的方法’其中,該溶液加熱50〜80 °C後黏度可控制在500 cps以下。 . 9、如申請專利範圍第1項所述之電子發射源表面活 化的方法’其中,在喷塗過程中喷畫裝置需加熱50〜80 °C 面ο 表-8 原 ο ^ 5 射熱 發加 子需 電構 之結 述極 所陰 項中 1程 第過 圍塗 範噴 利在 專, 請中 申其 如, 、法 ο方 一—|的 化。 活OC 第裝第筒加筒 圍模圍滾有滾 範脫範該具該 利該利,内, 專,專中筒時 請中請其滾層 申其申,一覆 如,如法其貼 、法、方述及 1方2的前膜 1—^的'—^化,膠。 化 活上之化 活 面以面軟 子脫電 電式之 之筒述 述滾所 所\項 項為1 τ-Η 置 一—I 有壓覆 具滾貼 置在及 裝,膜 膜元膠 脫單對 式熱先 面 表筒表熱 表。源滾構加 源置射兩結行 射裝發少極進 發模子至陰層 面形 表層 源覆 射貼 發之 子覆 電貼 之使 述需 所程> 項製Μ 1 膜)m 月 5 第剝° 圍合卜 々巳 己 · I 酉 G 利為為 專,以 請中可 申其, 如,度 、法厚 3方訂 1的特 化之 活成 膜 脫 於 利1304994 ---------- --- Force 'in the general outline of the 'circle, ', ft, such as the application of the scope of the patent range of the fifth section of the electronic emission source surface method' The solution has an aqueous solution having a solubility of 5% to 1% by weight. 7 If the surface of the electron emission source described in item 5 of the patent application scope is 4 、,, j_ * where the room temperature viscosity of the solution is controlled below 1000 cps, 8^, 8, as in the fifth application scope of the patent application. The method for the surface b of the electron emission source is described in which the viscosity of the solution can be controlled below 500 cps after heating at 50 to 80 °C. 9. The method for activating the surface of an electron-emitting source according to claim 1, wherein the painting device needs to be heated at a temperature of 50 to 80 ° C during the spraying process. Table -8 Original ο ^ 5 The addition of the child needs to be electrically structured. The first part of the sinister item is the one-way smear of the smear of the smear. Live OC The first tube and the tube are surrounded by a roll. There is a roll of Fan Fan. The one, the inside, the special, the special tube, please ask the roll layer to apply for it, one cover, such as the law , method, and description of the 1 - 2 front film 1 - ^ '- ^, glue. The active surface of the living surface is described by the tube of the soft surface of the soft surface. The item of the rolling is 1 τ-Η 1 - I is covered with a pressure roller and placed on the film. Single pair hot face table heat meter. Source rolling structure plus source shooting two knots line shot hairpin haircuts to the negative layer of the surface layer of the source of the affixed hair of the child's electricity and electricity to paste the stipulations of the process> Item Μ 1 film) m month 5 ° Enclosed Bu Yi Ji· I 酉G Li is a special, so please ask for it, such as, degree, law thick 3 party set 1 specialization of the film into the profit ^1. 第16頁 1304994 六、申請專利範圍 1 4、如申請專利範圍第1項所述之電子發射源表面 活化的方法,其中,在於塗覆後之陰極結構以5 0〜8 0 °C焙 烤1 0〜2 0分鐘,俾使貼覆層固化鑄形。 1 5、如申請專利範圍第1項所述之電子發射源表面 活化的方法,其中,該膠膜至少一側具有黏膠。 1 6、如申請專利範圍第1或1 5項所述之電子發射 源表面活化的方法,其中,該膠膜可以為一種高強度之PE 或PVC等之任一種高分子聚合材質所構成。^1. Page 16 1304994 VI. Patent Application No. 1 4. The method for surface activation of an electron emission source according to claim 1, wherein the coated cathode structure is 50 to 80 ° C. Bake for 10 to 2 0 minutes, and let the coating layer solidify the casting shape. The method of surface activation of an electron-emitting source according to claim 1, wherein the film has a glue on at least one side. The method of surface activation of an electron-emitting source according to claim 1 or claim 15, wherein the film is composed of a high-strength polymer material such as PE or PVC. 第17頁Page 17
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