TWI278894B - Method for activating electron source surface of field emission display - Google Patents
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i號 941052fM 五、發明說明(1) 【發明所屬之技術領域1 本赉明係有關一種場& -即 化的方法,尤指一種利用’;:不益之電子發射源表面活 喷塗灌注於陰極結構之各=技術之高壓空氣將溶液均句 再將乾燥後之披覆膜,利用名、内,在再使其乾煉成膜後, 發射源表面之效果。]用剝膜設備移除,以達活化電子 【先前技術】 。白知之二極場發射顯一 構與陰極結構,陽極’其結構主要係包含陽極結 ? pacer),提供為陽極結構極結構之間設置有支撐器(s 及作為陽極結構盥陰極f極結構間真空區域之間隔, 、陽極基板、—陽構間之支樓,該陽極結構係包含 收);而該陰二V包層八η榮光粉一 、-電子發射源層、一介陰極基板、一陰極導電層 係被提供一電位差二層及一閘極層;其中該閘極層 陽極導電層二;:ίΐ:子由 電子右ΐ4 & 以獒供電子束之加速,俾使 層激發而你苴動能撞擊(imp i nge)陽極結構上之螢光粉體 二動〔恭、/古發光.。據此,為了使電子在場發射顯示器中 ^直丄兩以真空設備將顯示器保持至少10-5托(tor 1〇以下 ^广度/使電子獲得一良好的平均自由動徑(mean free Ρ〇& 、同^應避免電子發射源和螢光粉區的污染及毒化 右各為使電子有足夠能量去撞擊螢光粉,故在兩板間需 、t田間隙’使電子有足夠的加速空間來撞擊螢光粉體, 達到使螢光粉體能充分產生發光效應。i No. 941052fM V. INSTRUCTION DESCRIPTION (1) [Technical Field 1 of the Invention] This invention relates to a field &-methodization method, especially a method for utilizing ';: unfavorable electron emission source surface living spray infusion Each of the cathode structures = the high-pressure air of the technology, and the effect of the surface of the source is obtained by drying the solution after the film is dried, using the name and the inside, and then drying it into a film. Removed with a stripping device to activate the electrons [Prior Art]. The two-pole field emission of Baizhi has a structure and a cathode structure, and the anode 'its structure mainly includes an anode junction? pacer), which is provided with a support between the anode structure and the pole structure (s and an anode structure and a cathode between the f-pole structures). The interval between the vacuum regions, the anode substrate, the abutment between the anodes, the anode structure includes the acceptor; and the cathode two V-clad eight n glory powder, the electron emission source layer, the one cathode substrate, and the cathode The conductive layer is provided with a potential difference of two layers and a gate layer; wherein the gate layer has an anode conductive layer two;: ΐ: the electrons are driven by the electrons & 4 & 獒 for the electron beam to accelerate, the layer is excited and you 苴Kinetic energy impact (imp i nge) on the anode structure of the phosphor powder two movements [Kong, / ancient light. Accordingly, in order to make the electrons in the field emission display, the vacuum display device maintains the display at least 10-5 Torr (tor 1 〇 below ^ breadth / gives the electron a good average free moving path (mean free Ρ〇 & And the same should avoid the pollution and poisoning of the electron emission source and the phosphor powder area, so that the electrons have enough energy to hit the fluorescent powder, so the gap between the two plates and the t field must make the electrons have enough acceleration space. To strike the phosphor powder, the phosphor powder can fully produce the luminescent effect.
1278894 五、發明說明(2) 其中所謂的電子發射源層係以奈米破管為主成& 於奈米碳管(Carbon nano tubes)自 1 991 年被! 土 j ima 提 $ & (Nature 354,56 (1991))具備極南的電子特性,並且已 被多種電子元件内所使用,而奈米碳管可以有报高的長寬 比(aspect ratio)大於5 0 0以上,和高的剛性其楊氏係、數、 多在10 OOGPn以上,而奈米碳管之尖端或缺陷處均為^子 級規模的露出,以上這些特性因此被認為一種理想的場電 子發射源(electron field emitter)材料,例如一種場發 射顯示器之陰極結構上之電子發射源之利用。由於奈^石^ 管具備以上所示之物理特性,因此也可被設計為多^製= 如’網印或薄膜製程等以圖騰化於電子元件使用。 、★然就其中所謂的陰極結構製作技藝,係將奈米碳管作 為電子發源材料實施製作於陰極導電層上,其製作方法可 =2 : ί空沉積(CVD),或是一種可以以感光型奈米石炭 官洛=圖,化製作於各該像素内之陰極導電層上,亦可為 二二厌言’谷液格配網罩製作,或是一種電泳法將奈米 石反t ί佈沉積於陰極導電層上,然不論各該做法,均須於 f t,作ί f以5 〇 0 °C以上之高溫燒結,俾使於各該製程 ^^之/谷制移除’並可使奈米碳管固著於陰極導電層上 ,以增加其附著力。 V包 不過L極結構製程並未於此完成,通常於高溫燒結製 Y羞仍;隹彳一 τ 一所謂的表面活化製成,由於高溫燒結仍不 足以移除Φ , 70 ,或其他^于發射源表面其他非奈米碳管之碳質塊材結構 ? 不良晶型之奈米碳管,或其他碳球結構等,或其1278894 V. INSTRUCTIONS (2) The so-called electron emission source layer is mainly composed of nano-tubes and carbon nanotubes (Carbon nano tubes) since 991! j j ima 提 $ & (Nature 354, 56 (1991)) has extremely south electronic properties, and has been used in a variety of electronic components, and carbon nanotubes can have a high aspect ratio More than 500%, and high rigidity, its Young's system, number, and more than 10 OOGPn, and the tip or defect of the carbon nanotubes are exposed at the sub-scale scale. These characteristics are considered to be an ideal. The use of an electron field emitter material, such as an electron emission source on a cathode structure of a field emission display. Since the nanotubes have the physical properties shown above, they can also be designed to be used in electronic components such as 'screen printing or thin film processes. And ★ the so-called cathode structure manufacturing technology, the carbon nanotubes are used as an electron source material on the cathode conductive layer, the production method can be = 2: ί deposition, or a sensitization The type of nano-carbon charcoal official Luo = map, produced in the cathode conductive layer in each of the pixels, can also be made of two or two 'speaking' Gu Li grid mesh cover, or an electrophoresis method to reverse the nano stone counter t ί The cloth is deposited on the cathode conductive layer, and in any case, it must be sintered at a high temperature of 5 〇 0 ° C or higher, so that the process can be removed from each process. The carbon nanotubes are fixed to the cathode conductive layer to increase their adhesion. V package, but the L-pole structure process is not completed here, usually in the high-temperature sintering process Y is still; 隹彳一τ a so-called surface activation, due to high temperature sintering is still not enough to remove Φ, 70, or other a carbonaceous bulk structure of other non-carbon nanotubes on the surface of the source; a poorly crystalline nanocarbon tube, or other carbon sphere structure, or
第6頁 1278894 五、發明說明(3) 他因高溫燒結 米碳管電子發 之表面活化程 升電子束產生 如台灣公 率之增強方法 ,係利用一種 除,以移除前 或是,近來發 之高溫可使不 噴砂處理以物 ’雖然 陰極結 或電漿 過高, 不利於 另 之「奈 係利用 構之各 除,以 且成本 以上述 成本低 構内, 處理之 又,噴 南解析 一種習 米碳管 一種熱 該像素 達活化 低廉, 94105204 所形成之高 射源之電子 序而力σ以移 之效果,該 告第480537 」發明專利 膠帶貼覆於 述所謂之多 展之雷射或 良結構之碳 理力量將不 之方法仍各 ’不過不適 因為膠帶貼 方式不利於 砂處理方式 之像素陰極 知技藝,如 電子源場發 炫膠或可熔 Θ之電子發 f子發射源 然以該技術 溫有機 產出效 除或改 等活化 號之「 案,此 電子發 於材料 電漿之 材再結 良之材 有其缺 用於電 覆不至 大型面 ,可能 結構之 台灣專 射電流 性塗料 射源表 表面的 係以熱ί 材料,率,因 質以達 技術可 奈米碳 專利案 射源表 或結構 熱處ί里 晶或是 料及結 點,如 子發射 電子發 板結揭: 會傷害 實施。 利案證 増益製 利用熱面,成 目的, 炫塗料 以上素材仍 此仍需經上 活化電子發 以有; 管發射源場 在貼膜後剝 面’再將該 以達活化之 ’係利用瞬 分解移除; 構加以破壞 影響奈 述所謂 射源提 發射效 膜處理 膠帶剝 目的, 間區域 或是, 以移除 以膠帶剝膜之方式 源已製作於三極之 射源,另,以雷射 ’且實施方式成本 到原碳管結構,且 書號第I 2 2 3 3 0 8號 程」發明專利案, 鑄型以灌注三極結 形後再將該熔膠剝 該製程雖過程簡易 灌注,仍有限制,Page 6 1278894 V. Description of the invention (3) He used the high-temperature sintering of the carbon nanotubes to generate a surface-enhanced electron beam, such as Taiwan's rate-enhancing method, which uses a diversion to remove before or after The high temperature can make the material not to be sandblasted, although the cathode junction or the plasma is too high, which is not conducive to the other "the use of the structure, and the cost is low in the above-mentioned cost, and the treatment is processed. A carbon nanotube is a kind of hot laser that achieves low activation, and the electron sequence of the high-emission source formed by 94105204 is used to shift the effect. The 480537" invention patent tape is attached to the so-called multi-expansion laser or good structure. The carbon power will not be the same method, but it is not suitable because the tape sticking method is not conducive to the pixel cathode technology of the sand processing method, such as the electron source field styling gel or the fusible electron emitting f sub-emission source. The effect of warm organic output is to eliminate or change the activation number. This electronic material is produced in the material of the material and the material is not used for the large surface. The structure of the Taiwan-specific galvanic coating source surface is based on the heat of the material, the rate, the quality of the technology can be used in the carbon patent source table or structural heat ί 晶 crystal or material and nodes, such as sub-emission The electronic hair plate is uncovered: it will hurt the implementation. The case of the case is to use the hot surface, the purpose, the material of the dazzle coating still needs to be activated by the electron; the tube source field is stripped after the film' The activation is based on the use of transient decomposition to remove; the damage is affected by the so-called source-emitting emission film treatment tape stripping, the inter-region or the removal of the tape by the way the source has been made in three The source of the pole, in addition, the laser 'and the implementation cost to the original carbon tube structure, and the book No. I 2 2 3 3 8 8" invention patent case, the mold is filled with a three-pole shape and then Although the process of melt-stripping is easy to infuse, there are still restrictions.
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12^78894 修正 --— 案號 94105204 彳 五、發明說明(4) J中-重大限制實施的因素係唯_種高黏度材料 =過程黏度仍為1 00 0cps以上,由於場發射顯更' =高:…’像素則為長寬更小,以 ;度?牛 ^孔隊間形成空氣間隙,該等空氣間隙將 = ^管電子發射源之密和,據此將難達全 :與奈 ”將致使電子發射源表面活化區域無法均句,J面全此 效果大打折扣。 ”、、員不晝面 =前述之剝膜機制未被充分提示與揭 5亥笔子發射源於被剝膜活化過程從不知各 =,俾使各該被剝除活化之電子發力量之 石:裘性物理力量,若僅任意剝除仍難達均 匕 f係對未來顯示器產品有大尺寸化之趨 :上果,尤 產性之剝膜機制存在。 而有〜可量 【發明内容】 本發明之主要目的,在於解決上述缺 化處理三極結構之陰極電子發射源,盔法全面ζ f表面活 =貼覆膜之方式,再將該貼覆表面以 子發射源表面之效果;此*塗方式可完全二=活化t 於二極之陰極結構之各舶、覆洛液灌 =元王灌注所造成均勻性不佳的現象,之德、=2开乂技藝無 溶液乾燥成膜,再剝膜處理,以移除 /^灌注後 ,铖乳化物寺,配合此剝膜機制並提供—=之殘 , 句勻性12^78894 Amendment--- Case No. 94105204 彳五、发明说明(4) J--The main limitation of the implementation of the factors is only _ kinds of high-viscosity materials = process viscosity is still above 100 cps, due to field emission is more ' = High: ...'pixels are smaller and wider, to the degree? An air gap is formed between the oxholes, and the air gaps will be the same as the electron emission source of the tube. According to this, it will be difficult to reach the full: and the Nai will cause the surface activation area of the electron emission source to be inconsistent. The effect is greatly reduced. ",, the staff does not face the face = the above-mentioned stripping mechanism is not fully prompted and revealed that the 5 Hai pen emission originated from the process of stripping activation, never knowing each =, so that each of the stripped activated electrons The stone of strength: the physical strength of the scorpion, if it is only arbitrarily stripped, it is still difficult to reach the average. The system has a large-scale trend toward future display products: the fruit, the special film-peeling mechanism exists. However, the main object of the present invention is to solve the above-mentioned method for reducing the cathode electron emission of the three-pole structure of the three-pole structure, and the method of the helmet method is to completely cover the surface of the cathode, and then attach the surface. The effect of the surface of the sub-emissive source; this * coating method can be completely two = activation t in the cathode structure of the two poles, the phenomenon of poor uniformity caused by the filling of the liquid solution of the Luo Wang = Yuan Wang, the virtue, = 2 The technique of opening the sputum without solution drying, and then stripping the film to remove/^ after infusion, 铖 铖 寺 寺 , , , , , , , , , , , , , , , , , , , , , , ,
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1278894 案號 94105204 五、發明說明(5)1278894 Case No. 94105204 V. Description of invention (5)
剝膜機構以達均勻性剝膜 為達上述之目的,本 源表面活化的方法,在陰 名吉後’再進行電子發射源 源表面活化製作,乃是利 具有噴塗裝置,此喷塗裝 利用高壓空氣將予以喷塗 之表面上,此時溶液將覆 區域滲入於電子發射源表 使其乾燥膜後,利用滾筒 筒式脫膜裝置具有兩滾筒 % ’在滾壓陰極結構之披 加熱軟化,讓另一滾筒可 【實施方式】 活化效果。 &日月之場發射顯示器之電 極結構製作完成,並利用 表面活化製作,在進行電 用嘴塗技術此噴塗技術包 置内部填充有溶液,該噴 谷液均勻噴塗灌注於陰 蓋閘極電極層,並由穿孔 面上’以形成一喷塗披覆 式^膜裝置進行脫膜處理 ’則述之其一滾筒内具有 覆層時’該滾筒先對披覆 以輕易將披覆層剝除。 子發射 高溫燒 子發射 括有一 塗裝置 極結構 及凹陷 層,再 ,此滾 加熱單 層進行 有關本發明之技術内容 及詳細說明 ,現配合 如圄祕-·大扒即令赞明之陰極 :圖所不.本發明之場發射顯示器义 化的方法,主要是以噴塗 二子散 面上η r』、日卜变〆 ,從% U極結構之電 活化雷;& Μ、7? # ^ 丹將3貼覆之膜 匕包子發射源表面之效果。 貼覆浚、、右、兹、d:於:r k 旧用所明噴塗方 統熱熔鑄形技藝盔法6入、# 口 °亥像素内 之徭$ %全灌注所造成均勻柹又 之後再利用灌注後溶液|t i ^ Ί不 早乙“成胰,再進行剝膜 圖式說 示意圖 表面活 射源表 以完成 完全將 克服傳 現象, ,以移The stripping mechanism achieves the above purpose by uniformly stripping the film, and the method of activating the surface of the source is performed on the surface of the electron emission source after the Yinmingji, and the spraying device is used, and the spraying device utilizes high-pressure air. On the surface to be sprayed, at this time, the solution is infiltrated into the electron emission source table to dry the film, and the drum-type stripping device has two rolls of %' heating softening in the rolled cathode structure, allowing another A roller can be [embodiment] activation effect. &The electrode structure of the sun and moon field emission display is completed and made by surface activation. In the electric nozzle coating technology, the spraying technology package is internally filled with a solution, and the spraying liquid is evenly sprayed and poured into the cathode gate electrode. The layer is formed by a coating on the perforated surface to form a spray-coated membrane device. When the coating has a coating in the drum, the drum is first coated to easily peel off the coating. . The sub-emission high-temperature burner emits a coating device pole structure and a concave layer, and then the roller heats the single layer to carry out the technical content and detailed description of the present invention, and is now matched with the cathode of the --- The method for realizing the field emission display of the present invention is mainly to spray η r 』 on the two sub-surfaces, and to convert the yt from the U-pole structure; & Μ, 7? # ^ 丹The effect of the 3-coated membrane on the surface of the buccal source.浚 、, right, 兹, d: in: rk old use of the spray method of hot melt casting technology skill helmet method 6 into, # mouth ° Hai pixel 徭 $% full perfusion caused by uniform 柹 and then reuse After perfusion, the solution |ti ^ Ί is not early B" into the pancreas, and then the stripping pattern is said to be schematic surface active source table to complete the phenomenon will be overcome, to shift
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1278894 五、發明說明(6) Ϊί:發射源表面之殘餘碳材或有機氧化物等, 。、七制亚提供一均勻性剝膜機構以達均勻性剝膜 :此種方法在成本低廉,實施簡#,克服結構上 以噴塗方式覆膜活化區域確實,再搭配以滾 械制可以提高剝膜均勻性。 ϋ首先’在噴塗溶液前先行製作三極陰極結構 =結構1 0,係提供一基板丄,此基板丄為破 2用銀膠於前述基板丄上形成有一電極層2 , 上形开^成有η電層(Dielectric) 3 ,於前述之 前^成有一閘極電極層4 ,可以利用微影或蝕刻 露閑極電極層4上形成有一穿孔(h〇le)已 :=層2之凹陷區域6 ,再利用奈米碳管於 ^成有一電子發射源7。 :㈣「第二、三圖所示」,係本發明 構^夜製作流程及完成示意圖。如圖所示:當上 〇製作完成,並利用高溫燒結後,再進行♦ r表面活化製作。 包 1術此3 ί行電子發射源7表面活化製#,乃是利 〇内却主技術包括有一具有噴塗裝置2 〇 ,此t =的溶液8均勻噴塗= 電極層4 ’並由穿孔(一 層9 ^ : 發射源7表面上,以形成、 σ弟二圖所不),再使其乾燥膜後。 活化效果 活化的限 筒式剝犋 1 0,此 璃材質, 此電極層 介電層3 方法,於 ,以及暴 極層2 l· 極結構噴 述陰極結 子發射源 用喷塗技 塗裝置2 空氣將予 表面上, )5及凹 噴塗披覆1278894 V. Description of invention (6) Ϊί: Residual carbon material or organic oxide on the surface of the source.七七亚亚 provides a uniform stripping mechanism to achieve uniform stripping: this method is low in cost, implements simple #, overcoming the structure, and spraying the activation area of the film, and then using the rolling mechanism to improve the stripping Membrane uniformity. ϋFirst, first make a three-pole cathode structure before the spraying solution = structure 10, provide a substrate 丄, the substrate 丄 is broken 2, and an electrode layer 2 is formed on the substrate 用 by silver glue, and the upper layer is formed The η electric layer (Dielectric) 3, before the foregoing, has a gate electrode layer 4, and a puncturing region can be formed on the immersion electrode layer 4 by lithography or etching. And then using a carbon nanotube to form an electron emission source 7. (4) "The second and third figures are shown", which is a schematic diagram of the construction process and completion of the present invention. As shown in the figure: When the top enamel is completed and sintered at a high temperature, ♦ r surface activation is performed. Package 1 is a 3 Å electron emission source 7 surface activation system, but the main technology includes a spray device 2 〇, this t = solution 8 is evenly sprayed = electrode layer 4 ' and by perforation (layer 9 ^ : The surface of the source 7 is formed to form, and the σ brother is not shown), and then the film is dried. The activation effect is activated by the barrel-type stripping 10, the glass material, the electrode layer dielectric layer 3 method, and the violent layer 2 l· pole structure spoke cathode cathode emission source spraying technology coating device 2 The air will be on the surface, ) 5 and the concave spray coating
1278894 -^--^052041278894 -^--^05204
五、發明說明(7) 上述之噴塗技術據此可實施 喷式可剝保護勝,習知用途係應:;二可以選講市售之 該所謂的嘴式可剝膜為一種高分从至屬表面之保護膜。 灌内,習知用途係用於五金加工材料,填充於高壓氣體 護膜’藉由高壓氣體之將高分子:^金屬表面之抗氧化保 覆於被喷圖表面,利用喷塗後、、材料霧化為小液珠塗 燥成膜’以形成〜彳 —,奋,夜中之揮發溶劑揮發後乾 溶液喷塗於陰極結槿 。、成制’利用此市售之喷塗 鑄形於各該像素f , 隹:以多次重複喷塗以充分填充 據此可實施方:置後待覆f液揮發乾燥成膜。 5%〜10%之水性^法製Μ或PVP溶液溶度可以為 5 0〜8 0 °C後黏度可抑吊^又控制在1〇〇〇Cps以下,加熱 之嘖搶,以言题处^制在5〇0 CPS以下。再利用一種塗裝用 、 恭回a工氣之壓送方式將塗料霧化噴塗於陰極結 構1 0之電子發射、、盾ry主& L 、 夕if]人旦a 7丨 /原7表面上,配5使用塗佈溶液及懸浮 口 3里比例,選用之塗裝喷槍空氣進氣流量至少大於20 、min由於使用之贺塗溶液8係一種水性溶液,被喷 塗之陰極結構1 〇需被預熱,俾使陰極結構1 0溫度保持 於5 0〜8 0 °C為佳,以利於塗佈之溶液8易於立即乾燥成膜 ,由於係以一喷塗程序因此可重複喷塗,可確保霧化塗料 充分鑄形於電子發射源7表面。 待’上述之;谷液乾無成膜後’利用滾筒式脫膜裝置3 0進行脫膜處理(如第四圖所示),此滾筒式脫膜裝置3 0具有兩滾筒301 、3 02 ,前述之滾筒3 〇 具有 加熱單元,在滾壓陰極結構i 〇之披覆層9時,該滾筒V. Description of the invention (7) The above-mentioned spraying technology can implement the spray-type peeling protection according to this, and the conventional use should be: 2. The commercially available so-called mouth peelable film can be selected as a high score to It is a protective film on the surface. In the irrigation, the conventional use is used for metal processing materials, filled with high-pressure gas film 'by high-pressure gas to polymer: ^ metal surface anti-oxidation coating on the surface of the sprayed surface, after spraying, materials Atomization is carried out by drying a small liquid bead to form a film to form ~彳-, Fen, the volatile solvent in the night is volatilized, and the dry solution is sprayed on the cathode crucible. Manufactured by using this commercially available spray mold on each of the pixels f, 隹: repeated spraying to fill the film sufficiently. According to this, the film can be evaporated and dried to form a film. 5% ~ 10% of water ^ method of Μ or PVP solution solubility can be 5 0 ~ 8 0 ° C after the viscosity can be suppressed ^ and controlled below 1 〇〇〇 Cps, heated 啧 grab, to the topic ^ The system is below 5〇0 CPS. Then, using a pressure-feeding method for coating, the paint is atomized and sprayed on the cathode structure 10 electron emission, shield ry main & L, 夕 if] human a 7 丨 / original 7 surface On the top, with 5 using the coating solution and the ratio of the suspension port 3, the air injection flow rate of the selected spray gun is at least greater than 20, min. Because of the use of the coating solution 8 is an aqueous solution, the sprayed cathode structure 1 〇 It is necessary to be preheated, so that the temperature of the cathode structure 10 is maintained at 50 to 80 ° C, so that the coated solution 8 can be easily dried and formed into a film, and the coating can be repeated by a spraying procedure. It is ensured that the atomized coating is sufficiently cast on the surface of the electron emission source 7. Waiting for the above; after the grain liquid is dry, the film is removed by the drum type film removing device 30 (as shown in the fourth figure), and the drum type film removing device 30 has two rollers 301, 302. The aforementioned drum 3 has a heating unit which is rolled when the coating layer 9 of the cathode structure i is rolled
第11頁 1278894 案號94105204 年月日 修正 五、發明說明(8) 3〇1先對披覆層9進行加熱軟化,讓滾筒3 0 2可以輕 易將披覆層9剝除,可將陰極結構1 0因高溫燒結無法移 除電子發射源7表面其他非奈米碳管之碳質塊材結構,或 其他不良晶型之奈米碳管,或其他碳球結構等,或其他因 高溫燒結所形成之高溫有機材料一併剝除,讓場發射顯示 器的顯示晝面效果更佳。 進一步,在於為配合剝膜製程需使貼覆之圖覆層形成 之特定厚度,可以為0. 1〜0. 5 mm以利於脫膜滚筒黏覆脫膜 〇 更進一步,在於塗覆後之陰極板以6 0〜8 0 °C焙烤1 0〜2 0 分鐘,俾使披覆層9固化鑄形,乾燥成膜後再以一滚筒式 脫膜裝置3 0進行脫膜,可以均勻脫膜以均勻活化電子發 射源7表面。 上述僅為本發明之較佳實施例而已,並非用來限定本 發明實施範圍。即凡依本發明申請專利範圍所做的均等變 化與修飾,皆為本發明專利範圍所涵蓋。Page 11 1278894 Case No. 94105204 Year of the month Amendment 5, invention description (8) 3〇1 First, the coating layer 9 is heated and softened, so that the roller 3 0 2 can easily strip the coating layer 9 and the cathode structure can be removed. 1 0 The high-temperature sintering cannot remove the carbonaceous bulk structure of other non-nanocarbon tubes on the surface of the electron-emitting source 7, or other poor-form crystal carbon nanotubes, or other carbon sphere structures, or other high-temperature sintering facilities. The formed high-temperature organic material is stripped together, which makes the display of the field emission display better. Further, the specific thickness of the coating layer to be applied to the stripping process may be 0.1 to 0.5 mm to facilitate the release of the stripping roller, further in the coated cathode. The plate is baked at 60 to 80 ° C for 10 to 20 minutes, and the coating layer 9 is solidified and formed into a film, and then removed by a roller type stripping device 30 to uniformly remove the film. The surface of the electron emission source 7 is uniformly activated. The above are only the preferred embodiments of the present invention and are not intended to limit the scope of the present invention. That is, the equivalent changes and modifications made by the scope of the patent application of the present invention are covered by the scope of the invention.
II
第12頁 1278894 案號 94105204 Λ_ 修正 圖式簡單說明 【圖式簡單說明】 第一圖,係本發明之陰極結構示意圖。 第二圖,係本發明之陰極結構喷塗溶液製作流程示意圖^ 第三圖,係本發明之陰極結構喷塗溶液製作流程完成示意 圖。 第四圖,係本發明之陰極結構表面披覆層進行剝除處理示 意圖。 【主要元件符號說明】 陰極結構.............10 基板................1 電極層...............2 介電層...............3 開極電極..............4 穿孔................5 凹陷區域..............6 電子發射源.............7 溶乂夜..... 8 披覆層··.............9 喷塗裝置...... 20 滚筒式脫膜裝置...........30 滾筒..........3 0 1 、 3〇2Page 12 1278894 Case No. 94105204 Λ_ Correction Brief description of the drawing [Simplified description of the drawings] The first figure is a schematic diagram of the cathode structure of the present invention. The second drawing is a schematic diagram of the manufacturing process of the cathode structure spraying solution of the present invention. The third drawing is a schematic diagram of the preparation process of the cathode structure spraying solution of the present invention. The fourth drawing is a schematic illustration of the stripping treatment of the surface structure of the cathode structure of the present invention. [Description of main component symbols] Cathode structure.............10 Substrate................1 Electrode layer........ .......2 Dielectric layer..................3 Open electrode..............4 Perforation.... ............5 recessed area..............6 electron emission source..................7 dissolved night ..... 8 Coating layer ···............9 Spraying device... 20 Roller type film stripping device......... ..30 Roller..........3 0 1 , 3〇2
第13頁Page 13
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