TWI322998B - - Google Patents

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TWI322998B
TWI322998B TW94144717A TW94144717A TWI322998B TW I322998 B TWI322998 B TW I322998B TW 94144717 A TW94144717 A TW 94144717A TW 94144717 A TW94144717 A TW 94144717A TW I322998 B TWI322998 B TW I322998B
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layer
electron emission
coating
emission source
electron
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TW94144717A
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TW200725682A (en
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Teco Elec & Machinery Co Ltd
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13229981322998

【發明所屬之技術領域】 本發明係有關一種用於場發射顯示器陰極板之電子發 Π:活化方法’尤其是一種可以避免電子發射源被破 壞,k南活化效率保留更多奈米碳管電子發射源之方法。 【先前技術】 德命Z知之三極場發射顯示器’其結構主要係包含陽極結 構/、丢極結構,陽極結構與陰極結構之間設置有支撐器。 pacer),提供為陽極結構與陰極結構間真空區域之間隔, 及=為陽極結構與陰極結構間之支撐,該陽極結構係包含 一陽極基板、一陽極導電層及一螢光粉體層(phosphors 1 ayer),而該陰極結構則包含一陰極基板、一陰極導電層 、一電子發射源層、一介電層及一閘極層;其中電子發射 源層係以奈米碳管為主成分,由於奈米碳f(Carb〇n nan〇 tubes)自 1991 年被 iijima 提出後(Nature 354,56 (199ι) )具備極高。的~電子特性,並且已被多種電子元件内所使用 而不米岐官可以有很尚的長寬比(aspect γ8η〇)大於 0以上’和高的剛性其揚氏係數多在1 00OGPn以上,而奈米 碳管之尖端或缺陷處均為原子級規模的露出,以上這些特 14因此被 < 為種理想的場電子發射源(electron field emitter)材料’例如一種場發射顯示器之陰極結構上之電 子發射源之利用。由於奈米碳管具備以上所示之物理特性 ,因此也可被設計為多種製程如,網印或薄膜製程等以圖 騰化於電子元件使用。 然就其中所謂的陰極結構製作技藝,係將奈米碳管作BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an electronic hairpin for a cathode emission display cathode plate: an activation method 'particularly, one can prevent the electron emission source from being destroyed, and the k-nan activation efficiency retains more carbon nanotube electrons. The method of transmitting the source. [Prior Art] The three-pole field emission display of Dezhi Z knows that its structure mainly includes an anode structure/drag structure, and a support is provided between the anode structure and the cathode structure. The pacer) is provided as a space between the anode structure and the vacuum region between the cathode structures, and = is a support between the anode structure and the cathode structure, the anode structure comprising an anode substrate, an anode conductive layer and a phosphor powder layer (phosphors) 1 ayer), the cathode structure comprises a cathode substrate, a cathode conductive layer, an electron emission source layer, a dielectric layer and a gate layer; wherein the electron emission source layer is mainly composed of a carbon nanotube, Since carbon carbon (Carb〇n nan〇tubes) has been raised by iijima in 1991 (Nature 354, 56 (199ι)) is extremely high. ~Electronic characteristics, and has been used in a variety of electronic components, but Mi Sui can have a very good aspect ratio (aspect γ8η〇) greater than 0' and high rigidity, the Young's coefficient is more than 100 OGPn, Whereas the tip or defect of the carbon nanotube is exposed on an atomic scale, the above 14 is thus <is an ideal field electron emitter material such as a cathode structure of a field emission display. The use of electronic emission sources. Since the carbon nanotubes have the physical properties shown above, they can also be designed for various processes such as screen printing or film processing to be used for electronic components. However, in the so-called cathode structure manufacturing technique, the carbon nanotubes are made.

1322998 五、發明說明(2) 為電子發源材料實施製作於陰極導電層上,其 ::化學真空沉積(CVD),或是一種可以以感光型奈方法可 e/谷液圖騰化製作於各該像素内之陰極導電層上,丁/、碳 喷塗奈米碳管溶液搭配網罩製作,或是一種 =可為 碳管塗佈沉積於陰極導電層丨,然不論各該做 ^米 :樣製作後予以550。(:以上之高溫燒結,俾使於各二須於 後殘留之溶劑移除’並可使奈米碳管固 導電〜程 ,以增加其附著力。 從爷電層上 此外於高溫燒結以固著電子發射源製程後仍需 ::::子發射源表面活化製程,由於高溫燒結易 良晶型之夺=3質城材結構,㊣中包含不 成,溫碳化材料,而這些材料將集結於電;:二 有幾種,ί 子之產生,習知技藝的處理方式 第一種以表面熱處理加以氧化移除,> 使該等集莊奸祖八刻斗〜路出,第一種以表面熱處理僅 加露出機會或開俾使埋藏於其τ之奈米碳管增 料黏著移除! ΐΐ 沾黏方式將表面該等集結非有效材 此有習知技蔽ΐ中尤以第三點之模式成本低效果顯著,對 ,係i用台灣專利第4805 73號之貼膜後剝膜處理 除,以移除前貼覆於電子發射源表面'再將該膠帶剝 或台灣所謂之多餘材料或結構以達活化之目的, 増益製程,係利用22一33二號,秦米碳管電子源場發射電流 、用種熱炫膠或可溶性塗料利用熱鑄型以 1322998 五、發明說明(3) 極結構之各該像素内之電子發射源表面’或本發明 ,刚所提出之專利申請案係以喷塗方式灌注高分子 於二極結構以型成覆膜後,再將該熔膠或覆膜加以移’,’ 已達活化電子發射源表面的目的。 “ 然以上該等習知技藝係對於陰極電子發射源以貼 理移除表面材料過程仍可保留一定奈米碳管附著於陰極〇 t 步說明,•以網印塗附製作的電子發:源之 不米碳管係藉由玻璃粉或銀粉材料藉燒結將夸 =固著於陰極電極上‘除此之外近年來,㈣碳管: 實施製作為電子發射源的技術更多樣化,除網印方 ^ CVD直接成,長外,還有噴塗或電泳沉積方式等,各該"製'' ° 所形成的電子發射源結構相對於陰極電極之附 製作技術的差異而有所不同,.然‘若以前述技術不^以= 改良對於以貼覆活化電子奋射源的機制仍有限制。 °、 請參閱第1圖所示,微觀燒結後未貼覆活化前之 板1之各像素電子發射源層之組織結構可區分為具= 基板2 ’該基板2上形成有一電極層3,鄰接電極声:: 為附著層4係以玻璃粉材銀粉材及奈米碳管為主, 著層4上者為奈米碳管結構層(電子發射源層 = 来碳管為主成分,及鄰接碳管附著層上之非有效料^ 1係因高溫燒結所形成之碳質塊材為±,原貼覆:化:5 係欲將非有效材料層5 1貼覆移除以使碳管結 $制 以利電子束的產出,其中該奈米碳管結構層由於主二 鬆散之奈米碳管,而附著層與所謂的非有效材料層為1322998 V. INSTRUCTIONS (2) The electron source material is fabricated on a cathode conductive layer, which is: chemical vacuum deposition (CVD), or can be made by photo-sensitization method e/cold liquid totemization. On the cathode conductive layer in the pixel, the D/, carbon sprayed carbon nanotube solution is prepared with a mesh cover, or a type = can be coated on the cathode conductive layer for the carbon tube coating, but regardless of the After production, give 550. (: The above high-temperature sintering, 俾 移除 移除 于 各 各 各 各 移除 并 并 并 并 并 并 并 并 并 并 并 并 并 并 并 并 并 并 并 并 并 并 并 奈 奈 奈 奈 奈 奈 奈 奈 奈 奈 奈After the electron emission source process, the :::: sub-emissive source surface activation process is required. Because of the high-temperature sintering, the good crystal form is the same as the 3 quality material structure, the middle contains the unheated, warm carbonized material, and these materials will be assembled in Electricity;: There are several kinds, the production of ί, the processing method of the conventional skills, the first one is oxidized and removed by surface heat treatment, > make these collections slay the ancestors ~ road out, the first one The surface heat treatment only exposes the opportunity or the opening to remove the reinforced carbon nanotubes buried in the τ. ΐΐ The way of sticking the surface to the non-effective materials is the third point. The mode cost is low, and the effect is that the film is removed by stripping after peeling film of Taiwan Patent No. 4805 73, and is attached to the surface of the electron emission source before removal. Structure for the purpose of activation, benefit process, use 22 No. 33, Qinmi carbon tube electron source field emission current, using a hot-melt glue or a soluble coating using a hot-cast type to 1322998 V. Invention description (3) Electrode emission source surface in each pixel of the pole structure 'or According to the invention, the patent application just proposed is to spray a polymer into a two-pole structure to form a film, and then transfer the melt or film to the surface of the activated electron emission source. "The above-mentioned conventional techniques can still retain a certain carbon nanotube attached to the cathode for the process of removing the surface material from the cathode electron emission source. • The electronic hair produced by screen printing: The source of the non-meter carbon tube is sintered by the glass powder or the silver powder material to be fixed on the cathode electrode. In addition, in recent years, (4) carbon tube: the technology for making the electron emission source is more diverse, In addition to the screen printing method CVD directly, long, there are spraying or electrophoretic deposition methods, etc., the electron emission source structure formed by the system is different from the cathode electrode manufacturing technology. ,. There is still a limit to the mechanism for attaching the activated electron excitation source. °, please refer to Figure 1, after micro-sintering, the electron-emitting layer of each pixel of the plate 1 before activation is not attached. The structure of the structure can be divided into = substrate 2 'the substrate 2 is formed with an electrode layer 3, and the adjacent electrode sounds:: the adhesion layer 4 is mainly composed of glass powder silver powder and carbon nanotubes, and layer 4 is The carbon nanotube structure layer (electron emission source layer = carbon nanotube as the main component, and the non-effective material on the adjacent carbon tube adhesion layer ^ 1 is a carbonaceous bulk material formed by high temperature sintering is ±, the original overlay: 5: The system is intended to remove the non-effective material layer 5 1 to make the carbon tube structure to facilitate the production of the electron beam, wherein the carbon nanotube structure layer is due to the main two loose carbon nanotubes. The adhesion layer and the so-called non-effective material layer are

第8頁 丄 五、發明說明(4) 構塊材, 其上下之 米碳管結 材料層5 之奈米碳 制對於以 專利案是 儀,其主 ’可能不 度渗入於 ,因此在 於電子發 中間層之 部分的奈 電子發射 出的目的 為因此該奈 結構層,所 構層5將被 1將被貼覆 管充分被露 熱熔鑄形方 利用喷塗高 要不善原因 僅於貼覆非 奈米碳管結 這些熔膠或 射源之各層 奈米碳管結 米碳管被移 源結構被黏 ,而致使畫 米碳管 以藉所 破壞分 而移除 出,達 式或者 分子溶 係,貼 有效材 構層5 尚分子 材料間 構層5 除,而 附移除 面表現 結構層5 謂的貼覆 解,據此 ,破壞後 成表面活 是本發明 劑灌注貼 覆溶劑於 料層5 1 中,甚至 材料塑形 ,於剝膜 被破壞, 是進一步 或是被破 均勻性降 係經燒結後之制密結 之結構力遠小於在於 活化機制的過程,奈 ,碳管表面的非有效 的奈米碳管結構層5 化的機制,然該等機 人先前所提出申請之 覆的方式,仍不盡完 鑄型或噴塗灌注過程 之外表面,部分將過 可以黏附至附著層4 固化後’將充分填塞 過%將不如前述之僅 非有效材料層51及 為整個單一像素内之 壞’而失去該電子產 低。 【發明内容】 Φ 本發明之主要目的,為解決以剝膜表面活化處理三搞 結構之陰極電子發射源’可能因灌注之熔膠或高分 於部份像素充分灌注於電子發射源層結構内,致使於制 過程將該等像素内的電子發射源被過分剝離或破壞,塑 各像素單元内之電子產生效果或相對於其他之電子產出/丄 電密度差異,影響畫面均勻性。因此本發明提供—種改 13,22998 五、發明說明(5) 善技術’係於灌注或填注熔膠或高分子材料溶劑前,於電 子發射源層内之奈米碳管結構層使形成一保護層,俾使 注之熔膠或溶劑僅限於局部奈米碳管層及非有效結構材料 層,如此於剝離貼覆材料過程僅移除非有效材料層及部八 奈米碳管,並保留大部分的奈米碳管於電子發射源結構= 致使前述之缺失發生使像素内之電子發射源結^被大 2份貼覆移除,而貼覆活化的後電子發射源結構,可利用 二簡易移除程序再將前述實施之保護層材料加以移除 影像原電子發射源之特性。 ’、 為達上述之目的,本發明之場發射顯示器電子發射源 面活化的方法(二),包括有: "、 在未活化之陰極板製作完成後,於陰極板之電子發射 $層之一側選用以乙醇為製作保護層之溶劑,塗附於電子 射源層的表面’並以表面微熱處理,以移除電子發射源 ,之非有效區域層之表面及奈米碳管層表面之小部分溶劑 僅保留電子發射源層表面及四周形成之保護層; 以調製塗料,該塗料為水性溶液,以塗裝用之噴搶利 高壓空氣之壓送方式將塗料霧化喷塗於前述以製作保護 2之陰極板,由於使用之喷塗塗料係一種水性溶液,係以 〜噴塗程序因此可重複喷塗,可確保霧化塗料充分鑄形於 電子發射源層表面; 、 在上述塗料塗覆於陰極板後,再以焙烤數分鐘,使貼 覆層固化鑄形’乾燥成膜後再以一滾筒式脫膜機構進行脫 犋,可以均勻脫膜以均勻活化電子發射源層表面,在脫膜Page 8 丄5, invention description (4) The block material, the carbon carbon tube material layer 5 of the upper and lower carbon nanotubes is made of the patent case The purpose of the electron emission of the portion of the intermediate layer is such that the structure of the nanostructure, the layer 5 will be fully covered by the tube, and the surface of the layer will be fully exposed to hot melt. The carbon nanotubes of the carbon nanotubes are bonded to the layers of the carbon nanotubes, and the carbon nanotubes are removed by the transfer structure, so that the carbon nanotubes are removed by the damage, and the molecular or molecular solution is removed. The effective material layer 5 is removed, and the molecular material interfacial layer 5 is removed, and the removed surface is represented by the structural layer 5, and accordingly, the surface activity after the destruction is the infusion coating solvent of the present invention. In 1 , even if the material is shaped, the film is destroyed, and the structural strength of the compacted structure is further reduced or broken. The structural force of the dense junction is much smaller than the process of the activation mechanism, and the surface of the carbon tube is not effective. Nano carbon nanotube structure layer 5 machine However, the manner in which the applicants have previously applied for the application still does not complete the surface of the casting or spraying process, and some of them will adhere to the adhesion layer 4 after curing. 'The full packing will be less than the above. Only the non-effective material layer 51 and the bad in the entire single pixel lose the electron yield. SUMMARY OF THE INVENTION Φ The main purpose of the present invention is to solve the problem of the cathodic electron emission source of the three-layer structure by the stripping surface activation process, which may be sufficiently infused into the electron-emitting source layer structure by the melted glue or the high score of the partial pixels. In the process of the process, the electron emission sources in the pixels are excessively stripped or destroyed, and the electron generation effect in each pixel unit or the difference in electron output/electrical density is affected, which affects the uniformity of the image. Therefore, the present invention provides a modification of 13,22998. 5. Description of the invention (5) Good technology is formed by forming a carbon nanotube structure layer in an electron emission source layer before injecting or filling a solvent of a melt or polymer material. a protective layer, such that the molten glue or solvent is limited to the local carbon nanotube layer and the non-effective structural material layer, so that only the non-effective material layer and the eight-carbon nanotube are removed during the process of peeling the covering material, and Retaining most of the carbon nanotubes in the electron emission source structure = causing the aforementioned deletion to occur, so that the electron emission source in the pixel is removed by a large number of patches, and the activated post-electron emission source structure can be utilized. The second simple removal procedure then removes the properties of the previously implemented protective layer material from the original source of the image. For the above purposes, the method for activating the electron emission source surface of the field emission display of the present invention (2) includes: ", after the unactivated cathode plate is completed, the electron emission layer of the cathode plate is One side is selected from the solvent of the protective layer made of ethanol, coated on the surface of the electron source layer and micro-heat treated on the surface to remove the electron emission source, the surface of the non-effective area layer and the surface of the carbon nanotube layer. A small portion of the solvent only retains the protective layer formed on the surface of the electron-emitting source layer and around it; to prepare the coating material, the coating material is an aqueous solution, and the coating material is atomized and sprayed by spraying the high-pressure air by spraying The cathode plate of the protection 2 is prepared. Since the spray coating used is an aqueous solution, the spray coating process can be repeatedly sprayed to ensure that the atomized paint is fully cast on the surface of the electron emission source layer; After the cathode plate, the baking layer is cured for several minutes, and the coating layer is solidified and formed into a film, and then defoamed by a roller type stripping mechanism, which can uniformly remove the film to uniformly activate the electricity. Sub-source layer surface, in stripping

-五、發明說明(6)-5, invention description (6)

後之陰極板的電子發射源層 焙烤數分鐘以充份移除多餘 【實施方式】 内仍有殘留部份之溶劑,再以 的溶劑。 明如Ϊ有關本發明之技術内容及詳細說明 ’現配合圖式說 請參 如圖所示 方法(二) 與貼覆溶 利用塗附 ,再利用 有效區附 於貼覆黏 的保護層 較多的奈 破壞’而 效區層及 層露出, 首先 板1,係 再利 閱第一 '•本發 ,主要 劑不至 或浸泡 一簡單 近之奈 著材料 加以阻 米碳管 失去活 少部分 再以加 ’先行 提供一 用銀膠 在上述之電 有一附著層4 ; 圖所示,係 明之場發射 是在未活化 互溶之材料 使保護層材 焙烤或旋轉 米碳管沾附 之貼覆,之 隔,俾使貼 層材料黏貼 化碳管露出 的奈米碳管 熱乾燥將保 製作未活化 基板2,此 於前述基板 極層3完成 本發明 顯示器 之三極 為保護 料可以 甩出, 的保護 後利用 覆溶劑 ,於剝 之機制 移除後 護層之 之三極 基板2 2表面 後,於 之陰極板結構示意圖。 電子發射源表面活化的 結構陰極板上,選用一 層(可以為一種溶液), 深入行程於奈求碳管層 將非有效區表面及鄰非 層材料加以移除,以利 於奈米碳管周圍所形成 或熔膠不至與附著層或 膜過程亦一併被移除或 ,待剝膜處理後將非有 ’使中間層之奈米碳管 溶劑移除》 結構陰極板1,此陰極 為玻璃材質; 上形成有一電極層3 ; 電極層3之表面上形成 在上述之附著層4完成後,於前述之附著層4之表面The electron-emitting layer of the cathode plate is baked for a few minutes to remove excess. [Embodiment] There is still a solvent remaining in the solvent. Ming Ruyi related to the technical content and detailed description of the present invention. Now, please refer to the method shown in the figure (2) and the coating and coating, and then use the effective area to attach to the adhesive layer. The damage of the nai's effect layer and layer exposed, first of the board 1, the system is followed by the first '• this hair, the main agent is not or soaked a simple material to prevent the carbon nanotubes from losing a little less Adding a silver paste to the above-mentioned electricity has an adhesion layer 4; as shown in the figure, the field emission is a coating in which the protective layer is baked or the rotating carbon nanotube is adhered to the unactivated and mutually soluble material. The thermal insulation of the carbon nanotubes exposed by the adhesive material adhered to the carbon tube will ensure that the unactivated substrate 2 is fabricated, and the three extremely protective materials of the display of the present invention can be removed from the substrate layer 3 to be protected. After the surface of the three-pole substrate 2 2 of the back cover layer is removed by a stripping mechanism by using a solvent, a schematic diagram of the cathode plate is used. The surface of the electron-emitting source surface is activated on the cathode plate, and a layer (which can be a solution) is selected, and the surface of the non-effective area and the adjacent non-layer material are removed in an in-depth manner to facilitate the carbon nanotubes around the carbon nanotubes. The formation or melting of the glue is not removed together with the adhesion layer or the film process, or the solvent of the intermediate layer of the carbon nanotube is removed after the film is removed. The cathode plate 1 is a glass. a material layer 3 is formed thereon; the surface of the electrode layer 3 is formed on the surface of the adhesion layer 4 after the adhesion layer 4 is completed.

1322998 圊式簡單說明 【圖式簡單說明】 第一圖,係本發明之陰極板示意圖。 第二圖,係本發明之陰極板上製作保護層示意圖。 第三圖,係本發明之陰極板喷塗塗料示意圖。 第四圖,係本發明之陰極板的貼覆層進行剝除處理示意 圖。 第五圖,係本發明之活化後陰極板結構示意圖。 【主要元件符號說明】 陰極板.............1 基板..............2 電極層.............3 附著層.............4 電子發射源層..........5 非有效區域層.........51 保護層.............6 塗料..............7 貼覆層.............8 滚筒式脫膜裝置.........9 ►喷槍.............101322998 简单 Simple description [Simplified description of the drawings] The first figure is a schematic diagram of the cathode plate of the present invention. The second figure is a schematic view of the protective layer formed on the cathode plate of the present invention. The third figure is a schematic view of the spray coating of the cathode plate of the present invention. Fig. 4 is a schematic view showing the stripping treatment of the coating layer of the cathode plate of the present invention. The fifth figure is a schematic view of the structure of the activated cathode plate of the present invention. [Description of main component symbols] Cathode plate.............1 Substrate..............2 Electrode layer.......... ...3 Adhesive layer.............4 Electron emission source layer..........5 Non-effective area layer.........51 Protection Layer..................6 Coatings..............7 Adhesive layer.............8 Drum type Stripping device.........9 ►Airbrush.............10

第14頁Page 14

Claims (1)

丄 丄 « *丄 丄 « * 一、1、—種場發射顯示器電子發射源表面活化的方法r 一),用以活化電子發射源表面之方法包括有:ϋ万去( a)、取一未活化之陰極板; 子發Z i思於陰極板之電子發射源層一側以溶劑塗附於带 以面以形成-保護層1以表面微 表面之小邱Iΐ源層之非有效區域層之表面及奈米碳管層 β为溶劑,僅保留電子發射源屛丰 曰 一溶劑 < 保護層; *千m層表面及四周形成 ,以:i亡以調製塗料’並將塗料塗佈於前述之保護層上 J刀麵形於電子發射源層表面形成—貼覆層. 上 覆層固i鑄ΐ上;溶劑塗覆於陰極板後’再以‘烤,使貼 子發射源成膜後再移除貼覆層,以均勻活化電 有殘【部份之溶劑,再以培烤充份移除多仍 發射源表圍第ί項所述之場發射顯示器電子 極結構。 ” T 。亥陰極板為三極陰 場:::…-電 法包括有: ’、 °亥陰極板製作方 ^ ^ 、取—基板,該基板為玻璃材質; • 再利用銀膠於前述基板表面上形忐女 C 在上述之電極層完成後,於電 極層之表面上形First, 1, the field emission display electron emission source surface activation method r), the method for activating the surface of the electron emission source includes: ϋ Wan go (a), take an unactivated cathode plate; I think that the side of the electron emission source layer of the cathode plate is coated with a solvent on the surface of the non-effective region layer and the carbon nanotube layer β which are formed on the surface to form the protective layer 1 to the surface micro-surface of the Xiaoqiu source layer. For the solvent, only the electron-emitting source is preserved, and the protective layer is formed on the surface and the periphery of the layer, and the coating is applied to the protective layer described above. Forming on the surface of the electron emission source layer - the coating layer. The upper layer is fixed on the casting layer; after the solvent is applied to the cathode plate, it is 'baked', and the film is formed after the film is deposited, and then the coating layer is removed. The uniform activation of the electric power is dissipated [partial solvent, and then the porridge is fully removed to remove the electron emission structure of the field emission display as described in the above item. T. Hai cathode plate is a three-pole negative field:::...-Electric method includes: ', ° Hai cathode plate maker ^ ^, take the substrate, the substrate is made of glass material; • Reuse silver glue on the aforementioned substrate On the surface, the shape of the female C is formed on the surface of the electrode layer after the electrode layer is completed. 第15頁 , 战有一電極層Page 15, battle with an electrode layer _#號 94:UzI717 申凊專利範圍 成有一附著層; 面上2有完成後’於前述之附著層之表 之電ί發mu”第1或3項所述之場發射顯示器 源層為奈米碳管。 ,、中,该電子發射 5 '如申請專利範圍第2項所 子發射源表面活化的方★(二) ,… 子發射源表1:ί圍第1項所述之場發射顯示器之電 表^ fi敎心I _的方法(二)’其中,該保護層以40 °c :::30和處理’以移除電子發射源層之非有效區域層 之表面及電子發射源層表面之小部分的溶劑。 7 、如申請專利範圍第1項所述之場發射顯示器電子 發,源表面活化的方法(二),其中,該喷搶以高壓空氣 之壓送方式將塗料霧化喷塗於陰極板之電子發射源層表面 8 、如申請專利範圍第1項所述之場發射顯示器電子 發射源表面活化的方法(二),其中,該喷槍為了配合使 用塗佈溶液及懸浮之固含量比例,選用之塗裝噴搶空氣進 氣流£至少大於200 l/min。 9 、如申請專利範圍第1項所述之場發射顯示器電子 發射源表面活化的方法(二),其中’該塗料可調製聚乙 婦醇PVA(Polyvinyl alcohol)或高分子聚合物PVP (polyvinylpyrrdidone)之任一種溶液。 9奉% Π修正替換頁 1322998 _案號94144717_年月日 修正 丨__ 六、_請專利範圍 1 0、如申請專利範圍第1項所述之場發射顯示器電 子發射源表面活化的方法(二),其中,該塗料之濃度為 5 % ~ 1 0 %之水性溶液。 1 1 、如申請專利範圍第1項所述之場發射顯示器電 子發射源表面活化的方法(二),其中,該塗料之常溫黏 度控制在lOOOcps以下。 1 2 、如申請專利範圍第1項所述之場發射顯示器電 子發射源表面活化的方法(二),其中,該塗料加熱後黏 度可控制在500cps以下。 1 3 、如申請專利範圍第1項所述之場發射顯示器電 子發射源表面活化的方法(二),其中,該貼覆層形成之 特定厚度為0.1〜0.5 mm。 1 4、如申諳專利範圍第1項所述之場發射顯示器電 子發射源表面活化的方法(二),其中,該貼覆層脫膜係 利用滾筒式脫膜裝置^ 1 5 、如申請專利範圍第1項所述之場發射顯示器電 子發射源表面活化的方法(二),其中,在於塗覆塗料後 之陰極板以6 0 ~ 8 0 °C焙烤1 〇〜2 0分鐘,使貼覆層固化鑄形。 1 6 、如申請專利範圍第1項所述之場發射顯示器電 子發射源表面活化的方法(二),其中,在脫膜後之陰極 板的電子發射源層内仍有殘留部份之溶劑,再以6 0〜8 0 °C 焙烤1 0〜2 0分鐘以充份移除多餘的乙醇溶劑。_#号94: UzI717 The scope of the patent application has an adhesion layer; after the completion of the surface 2, the surface of the field emission display described in the first or third item of the above-mentioned adhesion layer is Nye m. carbon tube. , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , The display of the meter ^ fi敎 I _ method (b) 'where the protective layer is treated with 40 ° C ::: 30 and 'to remove the surface of the electron-emitting layer and the electron-emitting layer A small portion of the solvent of the surface. 7. The method for the activation of the source surface of the field emission display according to claim 1, wherein the spray atomizes the material by high pressure air. The surface of the electron emission source layer of the cathode plate is sprayed on the surface of the electron emission source of the field emission display according to claim 1, wherein the spray gun is used in combination with the coating solution and the suspension. The solid content ratio, the selected coating spray air The inlet gas flow rate is at least greater than 200 l/min. 9. The method for surface activation of the field emission display electron emission source according to claim 1, wherein the coating can be used to prepare polyethoxylate PVA (Polyvinyl) Alcohol) or polymer PVP (polyvinylpyrrdidone) of any solution. 9 Feng% Π correction replacement page 1322998 _ case number 94144417_year and month correction __ six, _ please patent range 1 0, as claimed The method for activating the surface of the electron emission source of the field emission display according to item 1 (2), wherein the concentration of the coating is 5% to 100% aqueous solution. 1 1 , as described in the first item of the patent application scope The method for activating the surface of the electron emission source of the emission display (2), wherein the normal temperature viscosity of the coating is controlled below 1000° C. 1 2 , the method for activating the surface of the electron emission source of the field emission display as described in claim 1 (2) Wherein, the viscosity of the coating after heating is controlled to be less than 500 cps. 1 3 . The method for activating the surface of an electron emission source of a field emission display according to claim 1 of the patent application ( a method of forming a surface emission of an electron emission source of a field emission display according to claim 1 (2), wherein the sticker has a specific thickness of 0.1 to 0.5 mm. The coating stripping system utilizes a drum type stripping device, and the method for activating the surface of the electron emission source of the field emission display according to the first aspect of the patent application (2), wherein the cathode plate after coating is applied Bake at 1 0 ~ 80 °C for 1 〇~2 0 minutes to cure the coating. 1 6 . The method for activating a surface of an electron emission source of a field emission display according to claim 1 , wherein a residual portion of the solvent remains in the electron emission source layer of the cathode plate after the film is removed. Then, it was baked at 60 to 80 ° C for 10 to 20 minutes to thoroughly remove excess ethanol solvent. 第17頁 9|· ^ 1322998 . » 圖式Page 17 9|· ^ 1322998 . » Schema 第ι1頁Page ι1
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