TWI302351B - - Google Patents

Download PDF

Info

Publication number
TWI302351B
TWI302351B TW91124248A TW91124248A TWI302351B TW I302351 B TWI302351 B TW I302351B TW 91124248 A TW91124248 A TW 91124248A TW 91124248 A TW91124248 A TW 91124248A TW I302351 B TWI302351 B TW I302351B
Authority
TW
Taiwan
Prior art keywords
titanium nitride
forming
torr
nitride layer
deposition
Prior art date
Application number
TW91124248A
Other languages
English (en)
Chinese (zh)
Inventor
Ching Hua Chen
Original Assignee
Powerchip Semiconductor Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Powerchip Semiconductor Corp filed Critical Powerchip Semiconductor Corp
Priority to TW91124248A priority Critical patent/TWI302351B/zh
Priority to US10/941,939 priority patent/US7030015B2/en
Application granted granted Critical
Publication of TWI302351B publication Critical patent/TWI302351B/zh

Links

Landscapes

  • Semiconductor Memories (AREA)
  • Semiconductor Integrated Circuits (AREA)
TW91124248A 2002-10-21 2002-10-21 TWI302351B (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
TW91124248A TWI302351B (ja) 2002-10-21 2002-10-21
US10/941,939 US7030015B2 (en) 2002-10-21 2004-09-16 Method for forming a titanium nitride layer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW91124248A TWI302351B (ja) 2002-10-21 2002-10-21

Publications (1)

Publication Number Publication Date
TWI302351B true TWI302351B (ja) 2008-10-21

Family

ID=45070465

Family Applications (1)

Application Number Title Priority Date Filing Date
TW91124248A TWI302351B (ja) 2002-10-21 2002-10-21

Country Status (1)

Country Link
TW (1) TWI302351B (ja)

Similar Documents

Publication Publication Date Title
JP3976462B2 (ja) 半導体装置の製造方法
US6429127B1 (en) Methods for forming rough ruthenium-containing layers and structures/methods using same
TWI287824B (en) MIM capacitor with metal nitride electrode materials and method of formation
JP4314413B2 (ja) Ta▲下2▼O▲下5▼誘電体層の製造方法
US7700454B2 (en) Methods of forming integrated circuit electrodes and capacitors by wrinkling a layer that includes a high percentage of impurities
TW459381B (en) Method for making an integrated circuit capacitor including tantalum pentoxide
US7759717B2 (en) Capacitors comprising dielectric regions having first and second oxide material portions of the same chemical compositon but different densities
JPH08330544A (ja) 高誘電率キャパシタの下部電極の形成方法
US6482694B2 (en) Semiconductor device structure including a tantalum pentoxide layer sandwiched between silicon nitride layers
JP2002343888A (ja) 半導体素子のキャパシタ及びその製造方法
TW504800B (en) Capacitor for semiconductor memory device and method of manufacturing the same
KR100293713B1 (ko) 메모리소자의 커패시터 제조방법
TWI302351B (ja)
KR100524935B1 (ko) 반도체 메모리 소자의 제조방법
TWI222697B (en) A capacitor having a TaON dielectric film in a semiconductor device and a method for manufacturing the same
TWI264110B (en) Method of forming capacitor of semiconductor device
JP4063570B2 (ja) 半導体素子のキャパシタ形成方法
TW507299B (en) Method for manufacturing semiconductor device
KR100376268B1 (ko) 반도체 소자의 캐패시터 제조방법
JP2006190765A (ja) 半導体装置及びその製造方法
US20040198045A1 (en) Method for forming a titanium nitride layer
KR100422596B1 (ko) 캐패시터의 제조 방법
TWI290588B (en) Method for forming a titanium nitride layer
TW531842B (en) Fabrication method of capacitor having Ta2O3 dielectric layer
TW425705B (en) Manufacturing method of capacitor structure

Legal Events

Date Code Title Description
MK4A Expiration of patent term of an invention patent