.1296957 九、發明說明： 【發明所屬之技術領域】 本發明是關於一種利甩液體衍磨工法，在基板加工圖案 (也就是’形成圖案）之圖案加工方法及圖案加工裝置。 : 【先前技術】 在被加工物之基板加工圖案之技術，一般公知者有乾蝕 刻與濕蝕刻。另外，提出一種為了彌補各個缺點，在乾蝕 φ 刻之後進行濕蝕刻之銅配線的製法及製造裝置（參照日本 國特開平2 - 8 3 9 3 0號公報）。 另一方面，提出一種為了以低成本且高外觀比加工圖 、 案，在被加工物的加工面設置保護膜，由喷嘴將磨粒喷射 • 至該保護膜上進行乾噴砂，貫通保護膜在被加工物上加工 圖案等之噴砂加工方法。（參照日本國特開2〇〇2_28867號公 報）。 [專利文獻1]特開平2-83930號公報 # [專利文獻2]特開2〇〇2_28867號公報 」而在内插板製程（interposer process)中，為了謀求提 升裝置的反應性，縮小配線電阻且縮短配線長度，疊層多 數之基板作成多層基板構造。此時，作為在基板形成或加 工圖案之方法’包括有前述乾#刻法與濕钱刻法、或喷砂 加工方法。 但是，在乾蝕刻法存在有對圖·案側壁之再附著之問題， 在濕餘刻法由於為各向同性敍刻，所以存在有掩膜下部的 圖案側壁被大大的切削容易產生過度蝕刻，因過度蝕刻配 106009.doc 1296957 、友寬菱狹小且配線電阻變大之問題。 工掩膜官内沾^ 低雞十垣的加 底面，微細加工困難，报難形成例如對 極薄膜銅基板的圖垒s ^ 战例如對 圖案。另-方面，在前述噴砂加工方法， ΠΙ時因摩擦產生熱與靜t，因銅 電帶來不順利之問題。 π氧化與v 本發明是鏗於上述諸課題而研發者，其BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a pattern processing method and a pattern processing apparatus for processing a pattern (that is, forming a pattern) on a substrate by a method of polishing a liquid. [Prior Art] The technique of processing a pattern on a substrate of a workpiece is generally known to be dry etching and wet etching. Further, a method and a manufacturing apparatus for copper wiring which is wet-etched after dry etching φ in order to compensate for various disadvantages have been proposed (refer to Japanese Laid-Open Patent Publication No. Hei 2-8 3 903). On the other hand, in order to process a pattern at a low cost and a high aspect ratio, a protective film is provided on the processed surface of the workpiece, and the abrasive grains are sprayed by the nozzle to the protective film for dry blasting, and the protective film is penetrated. A sandblasting method for processing a pattern or the like on a workpiece. (Refer to the Japanese National Standard 2, 2_28867). In the interposer process, in order to improve the reactivity of the device, the wiring resistance is reduced. [Patent Document 1] Japanese Laid-Open Patent Publication No. Hei. No. Hei. No. Hei. Further, the wiring length is shortened, and a plurality of stacked substrates are formed into a multilayer substrate structure. At this time, the method of forming or processing a pattern on a substrate includes the above-described dry etching method, wet etching method, or sand blast processing method. However, in the dry etching method, there is a problem of reattachment of the sidewall of the pattern. Since the wet residual method is isotropically described, the sidewall of the pattern having the lower portion of the mask is easily cut and excessively etched. Due to over-etching with 106009.doc 1296957, Youkuan narrow and wiring resistance becomes larger. In the mask mask, the bottom surface of the chicken is reduced, and the micro-machining is difficult. It is difficult to form a pattern such as a pair of thin film copper substrates. On the other hand, in the above-described sandblasting processing method, heat and static electricity are generated by friction due to friction, which is caused by the problem that copper is not smooth. πOxidation and v The present invention is developed by the above-mentioned problems, and
::各向異性的加工不會產生過度㈣’可《平坦 膜寬内的加工底面，可以微細加卫之圖案加卫方法 加工裝置。 【發明内容】 為達成上述目#，本發明是一種在基板的表面加工圖案 之加工方法，其特徵在於在基板的表面設置掩膜，由喷嘴 噴射包含微粒的研磨材之液體至該基板的表面進行圖案加 工。 /、 在本發明中’為了使前述喷嘴的略中心交互位置於前述 掩膜的掩膜寬的側面，即使使喷嘴或基板左右移動對圖案 力ϋ工亦可。 在本么明中’為了使前述喷嘴面向前述掩膜的掩膜寬的 側面傾斜’即使在使噴嘴左右搖動或使喷嘴傾斜之狀態對 圖案加工亦可。 在本發明中’在使前述喷嘴接近基板的表面之狀態進行 粗加工之後’即使在由基板的表面遠離喷嘴之狀態進行精 力ϋ工亦可。 在本發明中，即使依口徑的大、中、小的順序使用前述 106009.doc 1296957 喷嘴，進行粗加工、粗精加工、精密精加工亦可。 發月中，刖述掩膜包括第i掩媒部與第2掩膜部，該 第1掩膜部是對應被加工部所形成之硬質樹脂製；該第2掩 膜部是對應非加工部所形成之軟質樹脂製；即使第i掩膜部 藉前述液體之喷射削除’第2掩膜部藉其彈性吸收研磨材的 衝擊亦可。:: Anisotropic processing does not produce excessive (four) 'can be used in the flat film width of the bottom surface, can be finely added to the pattern to enhance the processing device. SUMMARY OF THE INVENTION In order to achieve the above object, the present invention is a method for processing a pattern on a surface of a substrate, characterized in that a mask is provided on the surface of the substrate, and a liquid of the abrasive containing the particles is sprayed from the nozzle to the surface of the substrate. Perform pattern processing. In the present invention, in order to make the position of the nozzle slightly adjacent to each other on the side surface of the mask width of the mask, the nozzle or the substrate may be moved to the left and right to perform patterning. In the present invention, the side surface of the mask may be inclined so that the nozzle faces the mask, and the pattern may be processed in a state where the nozzle is shaken left and right or the nozzle is tilted. In the present invention, 'the roughening of the state in which the nozzle is brought close to the surface of the substrate' is performed even in a state where the surface of the substrate is away from the nozzle. In the present invention, the above-mentioned 106009.doc 1296957 nozzle may be used in the order of large, medium, and small calibers, and roughing, roughing, and precision finishing may be performed. In the month of the month, the mask includes an i-th mask portion and a second mask portion, the first mask portion is made of a hard resin formed corresponding to the processed portion, and the second mask portion is a corresponding non-process portion. The soft resin is formed; even if the i-th mask portion is removed by the ejection of the liquid, the second mask portion may absorb the impact of the abrasive material by elastic absorption.
在本發明中，前述液體即使是在純水加上作為研磨材之 氧化鋁粉末及微量的硝酸而形成者亦可。 在本發明中，即使在由嘴嘴噴射包含研磨劑之液體的同 時’吸引噴射後之該液體亦可。 若依據其他觀點，本發明是一種圖案加工裝置，是用以 在基板的表面加工圖案，包括：載置台，是載置在表面設 有掩膜之基板；喷嘴，是由該載置台的上方向前述基板的 表面噴射液體加工圖案，該液體是包含微粒的研磨材；液 體供給機構，是供給前述液體至該喷嘴；及移動機構，是 可以將前述載置台及喷嘴之至少一方移動至一定的方向。 此時’以在前述基板表面的銅或石夕加工圖案者較佳。前 述喷嘴與基板間的距離以〇·1〜1〇〇 mm者較佳。前述載置台 或喷嘴的移動速度以〇·〇1〜100 mm/秒者較佳。前述噴嘴的 口徑以0.01〜10 mm者較佳。前述液體是在純水加上作為研 磨材之氧化鋁粉末而形成時，該氧化鋁粉末的混合比以 5〜30質量％者較佳。另外，前述液體是在純水加上作為研 磨材之氧化鋁粉末而形成時，該氧化鋁粉末的粒子徑以 106009.doc 1296957 〇.5〜_m者較佳1此提升圖案的加工性能4 本發明中，前述喷嘴即使具有吸㈣，用以吸 ^ 二時，該吸引部即使配置於喷嘴…二 ‘I以：：用以實施本發明之最佳形態，以添附圖面為 依據加以說明。圖!為概略的顯示本發明的實施形態之圖案. 加工裝置之圖’圖2為顯示液體供給機構的_例之圖，圖^ 為說明掩膜的形成；5岡安#上 m 0 肜成及圖案的加工之圖，圖4為顯示加工圖牵 之-例之圖，圖5為說明加工底面的截面形狀之圖。- 在圖1或圖2中’ 1為圖案加工裝置，且該圖案加工裝置i 包括載置台4、噴嘴5、液體供給機構6以及移動機構7;該 載置台4是載置基板3 ’而基板3是一種在表面設置掩膜2之 被加工物；該喷嘴5是由載置台4的上方向前述基板3的表面 喷射液體（生料）W加工圖案’其液體w是包含微粒的研磨材 (磨粒），液體供給機構6是供給前述液體至該噴嘴&移 構7是可以將前述載置台4及喷嘴5之至少一方圖示例為載 置台4㈣至特定方向’該特定方向例如為X軸方向、y軸方 向軸方向。移動機構7可以適用於可以精密的移動控制 之探測器（檢查裝置）之驅動機構’若依該驅動機構，則可以 控制數μηι單位的位置。 另外，圖案加工裝置丨也包括載置部9與搬送機構；該載 置部9是載置收納容器8，而該收納容器8是以一定的間°隔多 奴地收納於多數枚的基板3 ;搬送機構（省略圖示）是由其載 置邛9的收納容器8 _枚一牧的取出基板3，經由調整機構1 〇 106009.doc 1296957 搬送至前述載置台4上，將加工處理後的基板3由載置台4 上送回前述收納容器8。喷射前述液體進行加工之部分，為 了防止液體的飛散，被設置於加工槽11内。在加工槽i i内 設置著洗淨用喷嘴12，用以將洗淨液體例如純水噴射至基 板3的表面作洗淨。另外，形成可以回收因加工所產生的廢 液。In the present invention, the liquid may be formed by adding an alumina powder as a polishing material and a trace amount of nitric acid to pure water. In the present invention, even when the liquid containing the abrasive is sprayed from the nozzle, the liquid after the suction is sucked. According to another aspect, the present invention is a pattern processing apparatus for processing a pattern on a surface of a substrate, comprising: a mounting table on which a mask is placed on a surface; and a nozzle from an upper direction of the mounting table a surface of the substrate is sprayed with a liquid processing pattern, wherein the liquid is a polishing material containing fine particles; a liquid supply means for supplying the liquid to the nozzle; and a moving mechanism for moving at least one of the mounting table and the nozzle to a fixed direction . At this time, it is preferable to process the pattern on the surface of the substrate or the copper or the stone. It is preferable that the distance between the nozzle and the substrate is 〇·1 to 1 mm. It is preferable that the moving speed of the mounting table or the nozzle is 〇·〇1 to 100 mm/sec. It is preferable that the diameter of the nozzle is 0.01 to 10 mm. When the liquid is formed by adding alumina powder as a grinding material to pure water, the mixing ratio of the alumina powder is preferably 5 to 30% by mass. Further, when the liquid is formed by adding an alumina powder as an abrasive to pure water, the particle diameter of the alumina powder is 106009.doc 1296957 〇.5 _m is preferably 1 processing performance of the lift pattern 4 In the invention, even if the nozzle has a suction (four) for sucking the liquid, the suction portion is disposed in the nozzle ... 2'I for the best mode of the present invention, and the description will be made based on the drawing. Fig. 2 is a schematic view showing a pattern of an embodiment of the present invention. Fig. 2 is a view showing a liquid supply mechanism, and Fig. 2 is a view showing the formation of a mask; 5 Gangan #上 m 0 及FIG. 4 is a view showing a processing diagram of the pattern, and FIG. 5 is a diagram illustrating a sectional shape of the processing bottom surface. - In Fig. 1 or Fig. 2, '1 is a pattern processing apparatus, and the pattern processing apparatus i includes a mounting table 4, a nozzle 5, a liquid supply mechanism 6, and a moving mechanism 7; the mounting table 4 is a substrate 3' 3 is a workpiece to which the mask 2 is provided on the surface; the nozzle 5 ejects a liquid (raw material) W from the upper surface of the mounting table 4 to the surface of the substrate 3, and the liquid w is an abrasive containing fine particles ( In the liquid supply mechanism 6, the liquid supply means 6 supplies the liquid to the nozzle & the transfer mechanism 7 is capable of arranging at least one of the mounting table 4 and the nozzle 5 as the mounting table 4 (four) to a specific direction 'this specific direction is, for example, X Axis direction, y-axis direction axis direction. The moving mechanism 7 can be applied to a drive mechanism of a detector (inspection device) that can perform precise movement control. According to the drive mechanism, the position of a unit of several μm can be controlled. Further, the pattern processing apparatus 丨 also includes a placing unit 9 that holds the storage container 8 and the storage container 8 that is housed in a plurality of substrates 3 at a constant interval. The transport mechanism (not shown) is a take-out substrate 3 on which the storage container 8 of the 邛9 is placed, and is transported to the mounting table 4 via the adjustment mechanism 1 〇106009.doc 1296957, and the processed portion is processed. The substrate 3 is returned to the storage container 8 by the mounting table 4. The portion where the liquid is ejected for processing is placed in the processing tank 11 in order to prevent scattering of the liquid. A cleaning nozzle 12 is provided in the processing tank i i for spraying a cleaning liquid such as pure water onto the surface of the substrate 3 for cleaning. In addition, it is possible to recover the waste liquid generated by the processing.
前述液體供給機構（液體供給系統）6是如圖2所顯示，包 括基槽13、供給槽14以及高壓儲氣瓶16 ;該基槽13是收容 液體w;該供給槽14具有2個，是由該基槽13供給液體並可 以父互使用；該高壓儲氣瓶16是由各供給槽14透過供給管 線1 5 ’供給加壓用之氣體例如氮氣至應將液體壓送至喷嘴 之各供給槽14。在基槽13設置著攪拌機構17。在加工槽11 連接著廢液回收管線20，該廢液回收管線2〇具有泵19，用 、回收廢液並將廢液送回基槽13或送至廢液回收槽18。回 廢液再利用時，由廢液的pH值與加工比率判斷液體的交 換時期’當判斷為需要交換的時期，則連接至廢液回收槽 :新的液體父換。另外，在基槽13連接著循環線22，該循 5 22具有泵21，用以使液體中的研磨材循環不會沉殿於 二吕内在基槽及供給槽14，可以由洗淨液供給槽23壓 、<、 另外’形成可以由洗淨液供給槽23供給洗 淨液至前述洗淨用噴嘴12。 作為前述液艚 $ (磨粒ih 即使在純水加上微粒的研磨 #、例如可以使用氧化鋁粉末作為研磨材，研磨 ，孔化銘粉末）的粒子徑例如為0.5〜10 μιη，更佳的是 106009.doc 1296957 1〜10 μιη程度。粒子徑若低於i μιη，則蝕刻比率降低，若超 過μπι,則加工精度降低。此時，混合比可以作成例如純 水95%與氧化鋁粉末5%、純水8〇%與氧化鋁粉末、或純 水70%與氧化鋁粉末30%。也就是，氧化鋁粉末的混合比以 5 30 /〇較佳。混合比若低於5%，則蝕刻比例降低，若超過 30%，則因流速降低之故蝕刻比率降低。前述液體由於氧 化鋁粉末沉澱容易凝固，所以為了防止氧化鋁粉末凝固， _ 最好在液體加上微量的酸例如硝酸。此時，混合比例如為 純水70%、氧化鋁粉末28%、硝酸20/〇。 作為基板3者，可以使用例如由環氧樹脂所形成之載體或 • 在矽基板24的上面貼上銅箔或銅膜或成膜之銅基板。在該 基板3的表面設置掩膜2。實施例之掩膜2是由第j掩膜部以 與第2掩膜部2b所形成，該第1掩膜部2a是對應被加工部形 成之硬質樹脂製；第2掩膜部2b是對應非加工部形成之軟質 樹脂製；由於第1掩膜部2a利用前述液體的喷射削除（參照 • 圖3(c))、第2掩膜部2b藉其彈性吸收研磨材的衝擊，所以第 2掩膜部2b不會被破壞，也就是藉衍磨工法可以在基板3的 銅箔25(或銅膜，以下同樣）加工圖案。第1掩膜部2a是例如 由丙烯系樹脂的UV硬化樹脂（該例是使用日本合成化學製 @K0GNMHS1/14)所形成，第2掩膜部2b是由聚氨酯系樹脂 所形成。首先，在基板3的表面藉通常之掩膜形成方法，形 成第1掩膜部2a之後’〔圖3(a)〕宜在該第1掩膜部2a的圖案 溝内充填軟質樹脂例如聚氨酯系樹脂形成第2掩膜部2b(圖 3(b))。 其次，針對圖案加工方法加以說明。進行圖案的加工時， 106009.doc 11 1296957 如圖4⑷所示，若使喷嘴5的中心位置於掩膜2的圖案寬的略 中u之狀態進行加工，則因液體由中心流向周緣，加工底 面26變成被加工成凹面狀，掩膜寬内的加工底面26很難平 坦加工。在此’為了平坦效率佳的加工掩膜寬内的加工底 面26,如圖4(13)及⑷，為了使前述喷嘴5的略中心交互位置 於刖述掩膜2的掩膜寬的對向之側面27，使喷嘴5或基板3 左右移動並加工圖案。若合成圖4之（a)、（b)、（c)的加工， 則形成如圖5(a)所示之加工形狀，藉此，如同圖之（b)所示， 可以平坦地加工加工底面。特別是，由於藉將包含微粒之 研磨材之液體，由喷嘴5喷射至基板3的表面，也就是液體 何磨工法，進行圖案加工，變成可以各向異性的加工。從 而，不會產生過度蝕刻，可以將掩膜寬（加工溝28)内的加工 底面26平坦的加工至角部E為止，可以作微細加工，例如可 以形成對極薄膜銅基板的圖案。 作為前述喷嘴5者，以口徑0·01〜10πιπ1程度，例如〇.3 mm 程度者較佳。口徑若低於0.01mm，則處理面積變小，若超 過10 mm，則加工精度降低。另外，加工條件以液體（漿） 的供給壓力為3〜7 kg/cm2程度、基板的表面與喷嘴間的間隙 為〇·1〜100 mm程度、噴嘴5或基板3的移動速度為〇〇1〜1〇〇 mm/秒程度者較佳。喷嘴與基板間的距離若低於〇. 1， 則處理面積變小，若超過i 00 mm，則蝕刻比率及加工精度 降低。另外’移動速度若低於〇·〇 1 mm/秒，則處理面積變 小，若超過1 00 mm/秒，則蝕刻比率降低。銅箔的厚度為數 μπι〜1〇〇 μπι程度。加工溝28的寬為ι〇〜15〇 μηι程度。 I06009.doc 12 .1296957 嘴嘴5的口徑以比加工溝28的寬狹小者較佳。 圖6〜圖11是顯示加工圖案之其他例之圖。與前述實施例 相同部份賦予相同參照符號並省略說明。首先，針對圖6 的貫施例加以說明，由於僅在圖6(a)加工底面26加工成凹面 狀’所以如圖6(b)及圖6(c)所顯示，當加工掩膜寬的側面27 附近時’則使用口徑較小（例如〇· 1 mm程度）之喷嘴5d作加 工。藉此’可以集中的研磨加工掩膜寬側面附近的加工面， 可以平坦效率佳的加工掩膜寬内的加工底面26。 在圖7的實施例，加上圖7(a)的加工，如圖7(b)所顯示， 為了使前述噴嘴5d對前述掩膜2的掩膜寬的側面27傾斜面 向’使喷嘴6d左右搖動並進行圖案的加工（加工溝28的研 磨）。藉此，可以積極的研磨加工掩膜寬側面附近的加工 面’可以平坦效率佳的加工掩膜寬内的加工底面26。在圖8 的實施例，不使喷嘴5d左右搖動，例如如圖8(a)或圖8(b)所 顯示，在使喷嘴5d傾斜於一方之狀態進行圖案的加工。此 時也可以平坦效率佳的加工掩膜寬内的加工底面。 將喷嘴配置成平面狀，僅在下方的基板表面噴射包含研 磨材之液體，無法期待會有充分的加工效果。在此，配合 加工殊度’基板3與喷嘴5間的距離h，可以在例如2〜1 〇〇 mm 的範圍内變化。在圖9的實施例，如圖9(a)所顯示，在使前 述喷嘴5接近基板3的表面之狀態進行粗加工之後，如圖9(b) 所顯示，在由基板3的表面遠離喷嘴5之狀態進行精加工。 在圖9(a)，加大加工比率可以進行粗加工，在圖9(b)，由於 液體（漿）衝擊至基板的表面之面積變大，研磨材（磨粒）的平 106009.doc -13- 1296957 均每單位面積的密度變 在各向異性的加工，可 工底面。 小’其部分，研磨材進入微細的線， 以平坦效率佳的加工掩膜寬内的加 在圖10或圖11的實施例，顯示準備不同口徑之喷嘴作加 工之例。圖10(a)為顯示不同口徑之喷嘴5a、5b、5c的底面 的樣子’圖io(b)為顯示相同此等噴嘴5a、5b、5c的側面的 樣子。也就是在該例，將口徑大（例如2mm程度）的喷嘴化、 口徑中（例如0·5 mm程度）的喷嘴5b、口徑小（例如〇3 _程 度）的喷嘴5c，順序的配置於基板3的搬送移動方向。而且， 如圖11(a)所顯示，首先使用喷嘴“實施粗加工，其次，如 圖n(b)所顯示，使用喷嘴5b實施粗精加工，進一步，如圖 1 所顯示，使用喷嘴5()實施精密精加工。又，各喷嘴、 5b、5c是如圖10(a)所顯示，以一定間隔分別多數設置於各 配官29a、29b、29c，各配管29a、29b、29c是配置於垂直 於搬送移動方向之方向。特別是，藉使用小口徑的喷嘴5c， 可以充分地實施加工至掩膜的邊際部分（加工底面的角部） 為止。如此即使依據本實施例，亦可以發揮與前述實施例 相同的效果。 進一步’針對其他例加以說明。圖12是顯示包括吸引部 之喷嗔31 ’該噴嘴31可以替代前面提出之喷嘴$、5a、5b、 5c ° 該喷嘴31是在喷嘴31的中心具有構成吸引部之吸引口 32’在其吸引口 32的外周具有噴射液體（漿）之喷射口33，所 謂同轴型之噴嘴。吸引口 32是透過吸引管34通至吸引泵。 106009.doc -14- 1296957 而且，藉吸引泵35吸引之饬辦以二、 ’丨之液體’變成回收至例如基槽丨3。 又噴射口 33是通至供給線15。 “使用”有如此吸引部之噴嘴32，如圖12所顯示，由喷 射口 33噴射之液體，立即由配置於喷嘴中心之吸引口 η吸 引’可以將此由基板3上排出。 使用僅進行前述噴射之喷嘴5的情形，如圖13所顯示，依 據圖案的狀況，喷射之液體w有時會滯留於基板3特別是掩 膜2的周/緣部。如此液體若滯留，則接著在所喷射之新的液 體中，單僅通過滯留之液體〜之上者流出，其部分加工效率 降低。另外，液體若滞留於掩膜的角部，則變成很難切削 忒角αΡ，其結果，如圖14所顯示，加工底面的角部E的彎曲 有可能變大。 此點若使用具有前述吸引部之喷嘴31，則所喷射之液體 立即藉吸引口 33由喷嘴的中心側被吸引，由於由基板3上被 排出，所以如圖13所顯示，液體w不會滯留於基板上。從而， 加工效率提升，而且，如圖15所顯示，可以將加工底面的 角部E加工（切削）接近直角的形狀。 而且，在圖12之例，藉吸引泵35吸引之液體，由於是回 收於基槽13，所以將回收之液體再度供給至噴嘴3丨，可以 將此些液體再利用。 又’前述噴嘴3 1的口徑的大小d，以比加工之線的寬|3小 者較佳，較佳者是喷嘴31的口徑的大小線的寬〇之1/3 程度。 以上’雖已由圖面詳述本發明之實施型態或實施例，但 106009.doc 1296957 本發明並不限定於前述的實施型態或實施例，只要在不逸 脫本發明的要旨之範圍都可以作種種的設計變更。在前述 實施例，在基板3的表面形成掩臈2的情形，形成第〗掩膜部 2a之後，雖在該第1掩膜部以的圖案溝内充填軟質樹脂例如 聚氨酯系樹脂，形成第2掩膜部2b，但在基板3的裏面，不 形成第1掩膜部2a，即使直接形成第2掩膜部（軟質樹脂製的 掩膜）2b亦T。作祕膜2者，即使為包含感光劑之光阻掩 膜亦可，或即使不包含感光劑者亦可。在本發明，加工圖 案之基板的表面並不限定於銅，例如即使為矽（si)亦可。 【產業上利用的可能性】 本發明是在基板上形成圖案之半導體裝置，有用於各種 FPD基板的製造。 【發明效果】 若依據本發明，可以發揮如以下的效果。 由於在基板的表面設置掩膜，由喷嘴噴射包含微粒的研 磨材之液體至該基板的表面加工圖案，所以藉各向異性的 加工’不會產生過度的蝕刻’可以平坦的加工掩膜寬内的 加工底面，可以作微細加工。從而，可以形成例如對極薄 膜銅基板的圖案。 為了使前述喷嘴的略巾^交互位置於前述掩膜的掩膜寬 的側面，若使噴嘴或基板左右移動加工圖案，則可以平坦 效專佳的加工掩膜寬内的加工底面。 一 為了使别述噴嘴對前述掩膜的掩膜寬的侧面傾斜面向， 若在使喷嘴左右搖動或使喷嘴傾斜之狀態加工圖案，則可 106009.doc -16- 1296957 以平坦效率佳的加工掩膜寬内的加工底面。 +在使前述噴嘴接近基板的表面之狀態進行粗加工之後， 若在由基板的表面遠離噴嘴之狀態進行精加工，則可以平 坦效率佳的加工掩膜寬内的加工底面。 若依口徑的大、巾、小的順序使用前述噴嘴，進行粗加 工、粗精加工、精密精加工，則可以平坦效率佳的加工掩 膜寬内的加工底面。 • 前述掩膜包括第1掩膜部與第2掩膜部，該第丨掩膜部是對 部所形成之硬質樹脂製；該第2掩膜部是對應非加 工部所形成之軟質樹脂製；第！掩膜部料成藉前述液體削 • 除，第2掩膜部若作成藉其彈性吸收研磨材的衝擊的情形， • 則第2掩膜部因前述液體的喷射不會被破壞，藉所謂液體衍 磨工法’可以確實的進行圖案的加工。 前述液體若是在純水加上作為研磨材之氧㈣粉末及微 量的硝酸而形成的情形，藉所謂液體衍磨工法，可以形成· » 加工基板的圖案。另外，藉添加微量的硝酸，可以防止氧 化鋁粉末在沉澱時的凝固。若在由噴嘴噴射包含研磨劑之 液體的同時，吸引喷射後之該液體，則由於喷射之液體不 會滯留於基板上，所以可以實施精度、效率佳的加工。 若依據本發明之圖案加工裝置，則藉各向異性的加工， 不會產生過度蝕刻’可以平坦的加工掩膜寬内的加工底 面，可以作微細加工，且可以形成例如對極薄膜銅基板的 圖案。 【圖式簡單說明】 106009.doc -17- 1296957 圖1為概略的顯示本發明的實施形態之圖案加工裝置之 圖0 圖2為顯示液體供給機構的一例之圖。 圖3為說明掩膜的形成及圖案的加工之圖，（a)為在基板表 ^成第1掩膜。卩之狀悲，（b)為在基板表面形成第2掩膜部 之狀態，⑷為削除第i掩膜部之狀態，⑷為分別顯示藉第2 掩膜部加工圖案之狀態。 θ為”肩示加工圖案之一例之說明圖，（a)為使噴嘴位置於 掩膜間的中心作加工之狀態’ (b)為使噴嘴移動至一掩膜側 作加工之狀態，⑷為使喷嘴移動至其他掩膜側作加工之狀 圃為成明加工底面的截面形狀之圖，（a)為合成顯示於圖 4的加工之狀態’（b)為顯示加工底面變成平坦之狀態。 圖6為加工圖案之例的說明圖，⑷為顯示使用平常口徑之 喷嘴的情形，（b)、⑷為顯示使用比⑷口徑小之噴嘴的情形。 圖7為加工圖案之例的說明圖，⑷為顯示使用平常口徑之 =的情形，為顯示使用比⑷口徑小之噴嘴：動 的情形。 =為一加工圖案之其他例的說明圖’ (a)，為顯示使喷 方 另外一方傾斜的情形。 圖9為加工圖案之其他例的說明圖，（a)為顯示使喷嘴接近 土板的樣子’（b)為顯示使噴嘴由基板遠離的樣子 =示口徑不同之喷嘴’⑷為底面圖，為側面圖。 圖案之其他例的說明圖’該圖案是使用不同 106009.doc 1296957 口徑之噴嘴，显首- ·、、、不u)為粗加工，（b)粗精加工（c)精密精加工。 圖12為具有吸引部之噴嘴的截面圖。 圖13為顯示在圖案上產生滯留液體的樣子之說明圖。 圖14為顯示因液體滯留加工底面的角部之加工狀態之說 明圖。 圖1 5為顯示使用具有吸引部之噴嘴加工時加工底面的角 部之加工狀態之說明圖。 106009.doc 【主要元件符號說明】 1 圖案加工裝^置; 2 掩膜 2a 第1掩膜部 2b 第2掩膜部 3 基板 4 載置台 5 喷嘴 5a、5b、5c、5d 喷嘴 6 液體供給機構 7 移動機構 8 收納容器 9 載置部 10 調整機構 11 加工槽 12 洗淨用f嘴 13 基槽 loc -19- 1296957 14 15 16 17 18 19 > 21 20The liquid supply mechanism (liquid supply system) 6 is as shown in FIG. 2, and includes a base tank 13, a supply tank 14, and a high-pressure gas cylinder 16; the base tank 13 is a liquid containing liquid; the supply tank 14 has two, The liquid is supplied from the base tank 13 and can be used by the parent; the high-pressure gas cylinder 16 is supplied from each of the supply tanks 14 through the supply line 15' to supply a gas for pressurization, such as nitrogen, to each supply of the liquid to be fed to the nozzle. Slot 14. A stirring mechanism 17 is provided in the base groove 13. The waste liquid recovery line 20 is connected to the processing tank 11, and the waste liquid recovery line 2 has a pump 19 for recovering the waste liquid and returning the waste liquid to the base tank 13 or to the waste liquid recovery tank 18. When the waste liquid is reused, the liquid exchange period is judged from the pH value of the waste liquid and the processing ratio. When it is judged that the exchange is required, it is connected to the waste liquid recovery tank: a new liquid parent exchange. In addition, a circulation line 22 is connected to the base groove 13 , and the circulation 22 has a pump 21 for circulating the abrasive material in the liquid without sinking in the base tank and the supply tank 14 , and can be supplied by the cleaning liquid. The groove 23 is pressed and <, and the cleaning liquid is supplied to the cleaning nozzle 12 by the cleaning liquid supply tank 23. The particle diameter of the liquid helium $ (abrasive grain ih, even if it is added to pure water plus fine particles, for example, alumina powder can be used as a polishing material, and the polishing powder, Kongmingming powder) has a particle diameter of, for example, 0.5 to 10 μm, more preferably 106,009. .doc 1296957 1~10 μιη degree. When the particle diameter is less than i μm, the etching ratio is lowered, and if it exceeds μπι, the processing accuracy is lowered. At this time, the mixing ratio can be, for example, 95% of pure water and 5% of alumina powder, 8% by weight of pure water and alumina powder, or 70% of pure water and 30% of alumina powder. That is, the mixing ratio of the alumina powder is preferably 5 30 / Torr. When the mixing ratio is less than 5%, the etching ratio is lowered, and if it exceeds 30%, the etching rate is lowered due to a decrease in the flow rate. Since the liquid is easily solidified by precipitation of the alumina powder, it is preferable to add a trace amount of an acid such as nitric acid to the liquid in order to prevent solidification of the alumina powder. In this case, the mixing ratio is, for example, 70% of pure water, 28% of alumina powder, and 20% of nitric acid. As the substrate 3, for example, a carrier formed of an epoxy resin or a copper substrate in which a copper foil or a copper film or a film is formed on the upper surface of the ruthenium substrate 24 can be used. A mask 2 is provided on the surface of the substrate 3. The mask 2 of the embodiment is formed by the j-th mask portion and the second mask portion 2b. The first mask portion 2a is made of a hard resin formed corresponding to the processed portion, and the second mask portion 2b is corresponding. The first mask portion 2a is removed by the ejection of the liquid (see Fig. 3(c)), and the second mask portion 2b absorbs the impact of the abrasive material by the elastic portion, so that the second mask portion 2a is made of a soft resin. The mask portion 2b is not broken, that is, the pattern can be processed on the copper foil 25 (or the copper film, the same applies hereinafter) of the substrate 3 by the honing method. The first mask portion 2a is formed of, for example, a UV curable resin of propylene resin (in this example, using @K0GNMHS1/14 manufactured by Nippon Synthetic Chemical Co., Ltd.), and the second mask portion 2b is formed of a urethane resin. First, after the first mask portion 2a is formed on the surface of the substrate 3 by a normal mask forming method, [Fig. 3(a)], the pattern groove of the first mask portion 2a is preferably filled with a soft resin such as a polyurethane system. The resin forms the second mask portion 2b (Fig. 3(b)). Next, the pattern processing method will be described. When the pattern is processed, as shown in Fig. 4 (4), if the center position of the nozzle 5 is processed in a state in which the pattern width of the mask 2 is slightly in the middle, the liquid flows from the center to the periphery, and the bottom surface is processed. The 26 is processed into a concave shape, and the processed bottom surface 26 within the mask width is difficult to be flattened. Here, the processing bottom surface 26 in the processing mask width for the flatness and efficiency is as shown in Figs. 4 (13) and (4), in order to make the position of the nozzle 5 slightly intersect with each other in the direction of the mask width of the mask 2 The side surface 27 moves the nozzle 5 or the substrate 3 to the left and right and processes the pattern. When the processing of (a), (b), and (c) of FIG. 4 is combined, the processed shape as shown in FIG. 5(a) is formed, whereby it can be processed flat as shown in (b) of the drawing. Bottom surface. In particular, since the liquid containing the abrasive material of the fine particles is ejected from the nozzle 5 to the surface of the substrate 3, that is, the liquid is subjected to pattern processing, it becomes anisotropic processing. Therefore, excessive etching is not caused, and the processed bottom surface 26 in the mask width (machining groove 28) can be flattened to the corner portion E, and fine processing can be performed, for example, a pattern of the counter thin film copper substrate can be formed. The nozzle 5 is preferably about 0. 01 to 10 ππ1, for example, 〇3 mm. If the diameter is less than 0.01 mm, the treatment area becomes small, and if it exceeds 10 mm, the machining accuracy is lowered. Further, the processing conditions are such that the supply pressure of the liquid (pulp) is about 3 to 7 kg/cm2, the gap between the surface of the substrate and the nozzle is about 1 to 100 mm, and the moving speed of the nozzle 5 or the substrate 3 is 〇〇1. A level of ~1 〇〇mm/sec is preferred. If the distance between the nozzle and the substrate is less than 〇. 1, the processing area becomes small. If it exceeds i 00 mm, the etching ratio and processing accuracy are lowered. Further, if the moving speed is lower than 〇·〇 1 mm/sec, the processing area becomes small, and if it exceeds 100 mm/sec, the etching ratio is lowered. The thickness of the copper foil is several μπι to 1 〇〇 μπι. The width of the processing groove 28 is ι 〇 15 〇 μηι. I06009.doc 12 .1296957 The diameter of the mouthpiece 5 is preferably smaller than the width of the processing groove 28. 6 to 11 are views showing other examples of the processing pattern. The same portions as those of the above-described embodiments are denoted by the same reference numerals, and the description thereof will be omitted. First, with reference to the embodiment of Fig. 6, since only the processing bottom surface 26 of Fig. 6(a) is processed into a concave shape, as shown in Fig. 6(b) and Fig. 6(c), when the processing mask is wide When the side 27 is near, the nozzle 5d having a small diameter (for example, about 1 mm) is used for processing. Thereby, the processed surface near the wide side surface of the mask can be collectively polished, and the processed bottom surface 26 within the mask width can be processed with good flatness and efficiency. In the embodiment of Fig. 7, the processing of Fig. 7(a) is added, as shown in Fig. 7(b), in order to make the nozzle 5d face the mask side of the mask 2, the side surface 27 is inclined to face the nozzle 6d. Shake and perform pattern processing (grinding of the processing groove 28). Thereby, the machined surface near the wide side surface of the mask can be actively polished, and the machined bottom surface 26 within the mask width can be processed with good flatness and efficiency. In the embodiment of Fig. 8, the nozzle 5d is not rocked left and right. For example, as shown in Fig. 8 (a) or Fig. 8 (b), the pattern is processed while the nozzle 5d is inclined to one side. At this time, it is also possible to process the underside of the mask width in a flat and efficient manner. The nozzles are arranged in a planar shape, and only the liquid containing the abrasive material is sprayed on the surface of the lower substrate, and sufficient processing effect cannot be expected. Here, the distance h between the substrate 3 and the nozzle 5 in accordance with the processing degree can be changed within a range of, for example, 2 to 1 〇〇 mm. In the embodiment of Fig. 9, as shown in Fig. 9(a), after roughing the state in which the nozzle 5 is brought close to the surface of the substrate 3, as shown in Fig. 9(b), the surface is separated from the nozzle by the surface of the substrate 3. The state of 5 is finished. In Fig. 9(a), the machining ratio can be increased by rough machining. In Fig. 9(b), the area of the surface of the substrate due to the liquid (slurry) is increased, and the abrasive material (abrasive grain) is flat 106009.doc - 13- 1296957 The density per unit area is changed to anisotropic processing, and the bottom surface can be worked. In the small portion, the abrasive material enters the fine line, and is applied to the embodiment of Fig. 10 or Fig. 11 in the width of the processing mask which is excellent in flatness efficiency, and shows an example in which nozzles of different calibers are prepared for processing. Fig. 10 (a) shows the appearance of the bottom surfaces of the nozzles 5a, 5b, 5c of different calibers. Fig. io (b) shows the side faces of the nozzles 5a, 5b, 5c which are the same. In this example, the nozzle 5b having a large diameter (for example, about 2 mm), the nozzle 5b having a small diameter (for example, about 0.5 mm), and the nozzle 5c having a small diameter (for example, 〇3 _ degree) are sequentially disposed on the substrate. 3 moves the moving direction. Further, as shown in Fig. 11(a), the nozzle is first used to perform roughing, and secondly, as shown in Fig. n(b), coarse finishing is performed using the nozzle 5b, and further, as shown in Fig. 1, the nozzle 5 is used ( In addition, the nozzles 5b and 5c are provided in a plurality of the respective positions 29a, 29b, and 29c at a predetermined interval as shown in Fig. 10(a), and the respective pipes 29a, 29b, and 29c are disposed. It is perpendicular to the direction of the transport moving direction. In particular, the nozzle 5c having a small diameter can be sufficiently processed to the marginal portion of the mask (the corner of the processed bottom surface). Thus, even according to the present embodiment, it is possible to The same effect as the foregoing embodiment. Further 'described for other examples. Fig. 12 is a view showing a squirt 31 including a suction portion. The nozzle 31 can replace the previously proposed nozzles $, 5a, 5b, 5c °. The nozzle 31 is at the nozzle. The suction port 32' constituting the suction portion at the center of 31 has an injection port 33 for ejecting liquid (pulp) on the outer periphery of the suction port 32, and a so-called coaxial nozzle. The suction port 32 is transmitted through the suction pipe 34 to the suction pump. 106 009.doc -14- 1296957 Moreover, by the attraction of the suction pump 35, the liquid of '丨" is recycled to, for example, the base tank 3. The injection port 33 is connected to the supply line 15. As shown in Fig. 12, the nozzle 32 of the suction portion, the liquid ejected from the ejection port 33 is immediately sucked by the suction port η disposed at the center of the nozzle. This can be discharged from the substrate 3. The nozzle 5 which performs only the aforementioned ejection is used. In other cases, as shown in Fig. 13, depending on the condition of the pattern, the ejected liquid w sometimes stays on the periphery/edge portion of the substrate 3, particularly the mask 2. Thus, if the liquid stays, it is then in the new liquid to be ejected. When the liquid is discharged only by the retained liquid, the partial processing efficiency is lowered. Further, if the liquid stays at the corner of the mask, it becomes difficult to cut the corner angle αΡ, and as a result, as shown in FIG. The curvature of the corner portion E of the bottom surface may become large. When the nozzle 31 having the suction portion is used, the liquid to be ejected is immediately attracted by the suction port 33 from the center side of the nozzle, and is discharged from the substrate 3, So as shown in Figure 13 It is shown that the liquid w does not stay on the substrate, whereby the processing efficiency is improved, and as shown in Fig. 15, the corner portion E of the machined bottom surface can be machined (cut) to a shape close to a right angle. Moreover, in the example of Fig. 12, Since the liquid sucked by the suction pump 35 is recovered in the base tank 13, the recovered liquid is again supplied to the nozzle 3, and the liquid can be reused. Further, the size d of the diameter of the nozzle 31 is compared with The width of the processing line is preferably smaller than 3, preferably 1/3 of the width of the diameter of the nozzle 31. The above description has been made in detail to explain the embodiment or embodiment of the present invention. However, the present invention is not limited to the above-described embodiments or examples, and various design changes can be made without departing from the spirit and scope of the invention. In the above embodiment, when the mask 2 is formed on the surface of the substrate 3, after the mask portion 2a is formed, a soft resin such as a urethane resin is filled in the pattern groove of the first mask portion to form a second In the mask portion 2b, the first mask portion 2a is not formed on the back surface of the substrate 3, and the second mask portion (mask made of a soft resin) 2b is formed directly. The secret film 2 may be a photoresist mask containing a sensitizer, or may be used without a sensitizer. In the present invention, the surface of the substrate on which the pattern is processed is not limited to copper, and may be, for example, bismuth (si). [Probability of Industrial Utilization] The present invention is a semiconductor device in which a pattern is formed on a substrate, and is used for production of various FPD substrates. [Effect of the Invention] According to the present invention, the following effects can be exhibited. Since a mask is provided on the surface of the substrate, the liquid of the abrasive containing the fine particles is ejected from the nozzle to the surface processing pattern of the substrate, so that the anisotropic processing 'does not cause excessive etching' can be processed flatly within the mask width The bottom surface of the machine can be micro-machined. Thereby, a pattern such as a pair of ultra-thin film copper substrates can be formed. In order to make the nozzles of the nozzles alternately on the side of the mask width of the mask, if the nozzle or the substrate is moved to the left and right of the processing pattern, the processed bottom surface can be processed in a wide and uniform manner. In order to make the nozzle face the inclined side of the mask width of the mask, if the pattern is processed in a state where the nozzle is shaken left or right or the nozzle is tilted, it can be masked with good flatness and good processing. The bottom surface is machined within the film width. + After roughing the state in which the nozzle is close to the surface of the substrate, if the surface is separated from the nozzle by the surface of the substrate, the processed bottom surface within the mask width can be processed with high efficiency. When the nozzles are used in the order of large diameter, towel, and small size, and rough machining, rough finishing, and precision finishing are performed, the bottom surface of the processing can be processed with a flat and efficient width. The mask includes a first mask portion and a second mask portion, wherein the second mask portion is made of a hard resin formed by a pair of portions, and the second mask portion is made of a soft resin formed corresponding to the non-processed portion. ;第! The mask portion is cut by the liquid, and if the second mask portion is made to absorb the impact of the abrasive material by the elastic member, the second mask portion is not destroyed by the ejection of the liquid, and the so-called liquid The honing method 'can be used to process the pattern. In the case where the liquid is formed by adding oxygen (tetra) powder as a polishing material and a small amount of nitric acid to pure water, a pattern of a substrate can be formed by a so-called liquid honing method. Further, by adding a trace amount of nitric acid, solidification of the alumina powder at the time of precipitation can be prevented. When the liquid containing the polishing agent is sucked by the nozzle and the liquid after the ejection is sucked, since the ejected liquid does not stay on the substrate, it is possible to perform processing with high precision and efficiency. According to the pattern processing apparatus of the present invention, the anisotropic processing does not cause over-etching, and the processed bottom surface can be processed in a flat manner, can be micro-machined, and can form, for example, a counter-thin film copper substrate. pattern. BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a view schematically showing a pattern processing apparatus according to an embodiment of the present invention. FIG. 2 is a view showing an example of a liquid supply mechanism. Fig. 3 is a view for explaining the formation of a mask and the processing of a pattern, wherein (a) is a first mask formed on a substrate. (b) is a state in which the second mask portion is formed on the surface of the substrate, (4) is a state in which the i-th mask portion is removed, and (4) is a state in which the pattern is processed by the second mask portion. θ is an explanatory view of an example of a shoulder-shaped processing pattern, and (a) is a state in which the nozzle position is processed at the center between the masks. (b) In order to move the nozzle to a mask side for processing, (4) is The state in which the nozzle is moved to the other mask side for processing is a cross-sectional shape of the bottom surface of the forming process, and (a) is a state shown in the processing shown in Fig. 4 (b) is a state in which the bottom surface of the processing surface is flat. 6 is an explanatory view showing an example of a processing pattern, (4) is a case where a nozzle having a normal aperture is used, and (b) and (4) are cases in which a nozzle having a smaller diameter than (4) is used. FIG. 7 is an explanatory diagram of an example of a processing pattern. (4) In the case of displaying the normal caliber =, the nozzle having a smaller aperture than (4) is used to display the movement: = is an explanatory diagram of another example of the processing pattern (a), and the other side of the spray is tilted. Fig. 9 is an explanatory view showing another example of the processing pattern, wherein (a) shows a state in which the nozzle is brought close to the soil plate, (b) shows a state in which the nozzle is moved away from the substrate, and a nozzle having a different opening diameter (4) is a bottom view. , for the side view. An illustration of the example 'This pattern is a nozzle with a different diameter of 106009.doc 1296957, the first - ·, ,, not u) for roughing, (b) rough finishing (c) precision finishing. Figure 12 is attractive Fig. 13 is an explanatory view showing a state in which a liquid is retained in a pattern. Fig. 14 is an explanatory view showing a processing state of a corner portion of a bottom surface processed by liquid retention. Fig. 15 is a view showing the use of suction. Explanation of the processing state of the corner portion of the bottom surface during nozzle processing. 106009.doc [Description of main component symbols] 1 pattern processing device; 2 mask 2a first mask portion 2b second mask portion 3 substrate 4 Mounting table 5 Nozzles 5a, 5b, 5c, 5d Nozzle 6 Liquid supply mechanism 7 Moving mechanism 8 Storage container 9 Mounting part 10 Adjustment mechanism 11 Processing groove 12 Washing nozzle f 13 Base groove loc -19- 1296957 14 15 16 17 18 19 > 21 20
22 23 24 25 26 27 28 29a、29b、29c • 31 32 33 34 35 w 供給槽 供給管線 高壓儲氣瓶 攪拌機構 廢液回收槽 泵 廢液回收管線 循壤線 洗淨液供給槽 石夕基板 銅猪 加工底面 側面 加工溝 配管 喷嘴 吸引口 喷射口 吸引管 吸引泵 液體 106009.doc -20-22 23 24 25 26 27 28 29a, 29b, 29c • 31 32 33 34 35 w Supply tank supply line High pressure gas cylinder stirring mechanism Waste liquid recovery tank Pump waste liquid recovery line Backstream line cleaning liquid supply tank Shixi substrate copper Pig processing bottom side processing groove pipe nozzle suction port injection port suction pipe suction pump liquid 106009.doc -20-